Radio frequency voltage conversion device and radio frequency device
Patent Information
- Application Number
- CN202311790122.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-22
- Publication Date
- 2026-09-22
- Estimated Expiration
- 2043-12-22
AI Technical Summary
随着手机平台的演进,射频开关的切换速率越来越高,而目前的射频开关效率均较低
[0020]本申请实施例通过在第二输出反馈电路与第二差分放大电路之间设置快速馈通电路,在射频元件进入切换状态时,可以基于控制信号EnFP从0切换成VDD,EnbFP随即从VDD变成0,因此Vo从等于Vi状态变成Vo=0,快速的下拉至0,提高输出的第二电压V2,为射频元件在切换时提供更大的驱动能量,加速切换的速度,提高射频元件切换效率的技术效果。
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Figure CN117826919B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of electronic device technology, and more specifically, to a radio frequency voltage conversion device and a radio frequency device. Background Technology
[0002] Radio frequency (RF) switches and RF converters are among the most commonly used RF components, and are widely used in various fields such as the Internet of Things (IoT), communication base stations, small base stations, repeaters, test instruments, radar, WiFi (wireless network), and RFID (radio frequency circuits). In RF links, they are used to perform functions such as channel switching and transmit / receive state switching.
[0003] For example, an RF switch is connected between the RF processing circuit and the mobile phone to switch operating states, enabling frequency band switching and signal reception and transmission. This RF switch can separate signals of different frequency bands and standards, and then output them to different systems in the mobile phone for processing. This reduces mutual interference between different signals and helps improve signal reception sensitivity. The RF switch is an essential key component in the mobile phone's RF front-end, and its performance directly determines the signal quality of the mobile terminal.
[0004] Due to its high speed, high isolation, and excellent radiation resistance, SOI (Silicon-On-Insulator) material offers advantages that GaAs (Gallium Arsenide) technology cannot match. Therefore, SOI technology has become the preferred choice for radio frequency (RF) switches in the wireless communication field in recent years. With the evolution of mobile phone platforms, the switching rate of RF switches is increasing, while the efficiency of current RF switches is relatively low.
[0005] Therefore, there is an urgent need for a device with high RF switch switching efficiency. Summary of the Invention
[0006] To address the aforementioned technical problems, this application provides an RF voltage conversion device and an RF device.
[0007] A first aspect of this application provides a radio frequency voltage conversion device applied to a radio frequency component, the radio frequency voltage conversion device comprising: The second bias circuit is used to receive the input first voltage and convert the first voltage into a bias voltage output. The second differential amplifier circuit has its first terminal electrically connected to the second bias circuit. A fast feedthrough circuit, wherein the input terminal of the fast feedthrough circuit is electrically connected to the second terminal of the second differential amplifier circuit, and the ground terminal of the fast feedthrough circuit is grounded; The second output feedback circuit has its control terminal electrically connected to the output terminal of the fast feedthrough circuit. The power supply terminal of the second output feedback circuit is used to receive the input first voltage. The output terminal of the second output feedback circuit is electrically connected to the third terminal of the second differential amplifier circuit. The second output feedback circuit is used to output the second voltage based on the output voltage of the fast feedthrough circuit and the first voltage; wherein the second voltage is less than or equal to the first voltage.
[0008] In one optional embodiment of this application, the second bias circuit includes at least: A first resistor module, wherein a first terminal of the first resistor module is used to receive the input first voltage; A diode module, wherein the positive terminal of the diode module is electrically connected to the second terminal of the first resistor module, the negative terminal of the diode module is grounded, the first terminal of the second differential amplifier circuit is electrically connected to the second terminal of the second resistor module, and / or the first terminal of the second differential amplifier circuit is electrically connected to the positive terminal of the diode module.
[0009] In an optional embodiment of this application, the second output feedback circuit includes: The first electronic switch module has its gate electrically connected to the output terminal of the fast feedthrough circuit, and its source is used to receive the input first voltage. The second resistor module has its first terminal electrically connected to the drain of the first electronic switch module, its second terminal grounded, and its third terminal electrically connected to the second resistor module. The first electronic switch module is used to control the output of the second voltage based on the first voltage under the action of the output voltage of the fast feedthrough circuit.
[0010] In one optional embodiment of this application, the third terminal of the second differential amplifier circuit is electrically connected to the midpoint of the second resistor module.
[0011] In one optional embodiment of this application, the first electronic switch module includes at least one P-type transistor.
[0012] In one optional embodiment of this application, the fast feedthrough circuit includes at least: The second electronic switch module has a first control terminal for receiving control signals, an input terminal for being electrically connected to the second output terminal of the second differential amplifier circuit, and an output terminal for being electrically connected to the control terminal of the second output feedback circuit. An inverter module is electrically connected to the second control terminal of the second electronic switch module. The inverter module is used to invert the control signal and input it to the second control terminal of the second electronic switch module to control the operation of the second electronic switch module.
[0013] In one optional embodiment of this application, the second electronic switch module includes at least two electrically connected N-type transistors.
[0014] In one optional embodiment of this application, the inverter module includes at least one N-type transistor and one P-type transistor.
[0015] In an optional embodiment of this application, the above-mentioned radio frequency voltage conversion device further includes: Multiple first-stage voltage conversion modules are connected in series. The input terminals of the multiple first-stage voltage conversion modules are electrically connected to the input power supply. The last-stage voltage conversion module of the multiple first-stage voltage conversion modules is electrically connected to the input terminal of the second bias circuit. The multiple first-stage voltage conversion modules are used to convert the voltage of the input power supply into the first voltage in stages.
[0016] In an optional embodiment of this application, the above-mentioned radio frequency voltage conversion device further includes: A positive voltage generation module, wherein the input terminal of the positive voltage generation module is electrically connected to the output terminals of a plurality of first-stage voltage conversion modules, the output terminal of the positive voltage generation module is used to connect to the positive voltage control terminal of the radio frequency component, and the positive voltage generation module is used to convert the second voltage into a target positive voltage and output it; A negative pressure generating module is provided, wherein the input terminal of the negative pressure generating module is electrically connected to the output terminal of the positive pressure generating module, the output terminal of the negative pressure generating module is used to connect to the negative pressure control terminal of the radio frequency element, and the negative pressure generating module is used to convert the target positive voltage into the target negative voltage and output it.
[0017] In one optional embodiment of this application, the radio frequency voltage conversion device includes at least a low dropout linear regulator.
[0018] In an optional embodiment of this application, the above-mentioned radio frequency voltage conversion device further includes: The driving circuit has its input terminal electrically connected to the input terminal of the second output feedback circuit, and its driving terminal electrically connected to the radio frequency component. The driving circuit is used to drive the radio frequency component to work based on the second voltage.
[0019] A second aspect of this application provides a radio frequency device, comprising: Radio frequency components; The radio frequency voltage conversion device as described in any of the preceding claims is electrically connected to the radio frequency element, and the radio frequency element operates based on the second voltage output by the radio frequency voltage conversion device.
[0020] This application embodiment sets up a fast feedthrough circuit between the second output feedback circuit and the second differential amplifier circuit. When the RF component enters the switching state, it can switch from 0 to VDD based on the control signal EnFP. EnbFP then changes from VDD to 0, so Vo changes from equal to Vi to Vo=0, quickly pulling down to 0, increasing the output second voltage V2, providing greater driving energy for the RF component during switching, accelerating the switching speed, and improving the switching efficiency of the RF component. Attached Figure Description
[0021] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 A circuit diagram of an RF voltage conversion device in the RF power control device provided in the embodiments of this application; Figure 2 This is a schematic diagram of a fast feedthrough circuit in a radio frequency power control device provided in an embodiment of this application; Figure 3 This is a schematic diagram of the overall structure of the radio frequency power control device provided in the embodiments of this application; Figure 4 A schematic diagram of a first-stage voltage conversion module circuit in the radio frequency power control device provided in the embodiments of this application; Figure 5 This is a schematic diagram of the positive voltage generation module circuit in the radio frequency power control device provided in the embodiments of this application; Figure 6 A schematic diagram of the negative voltage generation module circuit in the radio frequency power control device provided in the embodiments of this application.
[0022] in: 10. Radio frequency power supply control device; 100. First-stage voltage conversion module; 110. First bias circuit; 120. First differential amplifier circuit; 130. First output feedback circuit; 200. Second-stage voltage conversion module; 210. Second bias circuit; 220. Second differential amplifier circuit; 230. Fast feedthrough circuit; 240. Second output feedback circuit; 300. Positive voltage generation module; 400. Negative voltage generation module. Detailed Implementation
[0023] In the process of developing this application, the applicant discovered that there is an urgent need for a device with high radio frequency switch switching efficiency.
[0024] To address the aforementioned problems, this application provides a radio frequency voltage conversion device and a radio frequency device. To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description, through embodiments and in conjunction with the accompanying drawings, further illustrates a radio frequency voltage conversion device and a radio frequency device of this application. It should be understood that the specific embodiments described herein are merely illustrative of this application and are not intended to limit this application.
[0025] The serial numbers assigned to components in this document, such as "first" and "second," are used solely to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages). It should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are used solely for the convenience of describing this application and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0026] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0027] Please see Figure 1 This application provides an RF voltage conversion device for use in RF components. The RF voltage conversion device includes: a second bias circuit 210, a second differential amplifier circuit 220, a fast feedthrough circuit 230, and a second output feedback circuit 240, wherein: The second bias circuit 210 is used to receive the input first voltage and convert the first voltage into a bias voltage Vr output; the second bias circuit 210 is used to convert the input voltage V1 into the bias Vr output of the transistor in the second differential amplifier and the fast feedthrough circuit 230, so that the second differential amplifier circuit 220 and the fast feedthrough circuit 230 can work normally.
[0028] The second differential amplifier circuit 220 (e.g., by...) Figure 1In the case of Amp), the first terminal of the second differential amplifier circuit 220 is electrically connected to the second bias circuit 210. The second differential amplifier circuit 220 is used to determine the output voltage Vo of a fixed gain amplifier based on the voltage difference between the operating voltage Vr output by the second bias circuit 210 and the second voltage V2 output by the second output feedback circuit 240.
[0029] The fast feedthrough circuit 230 (e.g.) Figure 1 The fast feedthrough circuit 230 (in the FP module) is electrically connected to the second terminal of the second differential amplifier circuit 220, and the ground terminal of the fast feedthrough circuit 230 is grounded. When the control signal EnFP arrives, the FP circuit will pull down the gate port of MP1 to ground, and the fast feedthrough circuit 230 controls the second voltage V2 to equal the first voltage V1. When the RF component enters the switching state, the control signal EnFP will switch from 0 to VDD, and EnbFP will switch from VDD to 0. Therefore, Vo changes from equal to Vi to Vo=0, increasing the output second voltage V2, providing more energy during RF component switching, and accelerating the switching speed.
[0030] The second output feedback circuit 240 has its control terminal electrically connected to the output terminal of the fast feedthrough circuit 230. The power supply terminal of the second output feedback circuit 240 is used to receive the input first voltage. The output terminal of the second output feedback circuit 240 is electrically connected to the third terminal of the second differential amplifier circuit 220. The second output feedback circuit 240 is used to output the second voltage based on the output voltage of the fast feedthrough circuit 230 and the first voltage; wherein the second voltage is less than or equal to the first voltage.
[0031] When the input voltage V1 is higher than the second voltage V2, the P-type transistor MP1 in the second-stage voltage conversion module 200SLDO of the RF voltage conversion device is closed, and the second-stage voltage conversion module 200SLDO operates in the normal LDO state, and the output voltage of the second output feedback circuit 240 is the second voltage V2; when V1 is lower than the second voltage, the second-stage voltage conversion module 200SLDO switches to the pass-through mode, and its output voltage changes with the input voltage V1, that is, the output voltage V2 is equal to the input voltage V1.
[0032] This embodiment of the application sets up a fast feedthrough circuit 230 between the second output feedback circuit 240 and the second differential amplifier circuit 220. When the RF component enters the switching state, the control signal EnFP switches from 0 to VDD, and EnbFP then changes from VDD to 0. Therefore, Vo changes from being equal to Vi to Vo=0, and is quickly pulled down to 0, increasing the output second voltage V2. This provides greater driving energy for the RF component during switching, accelerates the switching speed, and improves the switching efficiency of the RF component.
[0033] Please continue reading Figure 1 In an optional embodiment of this application, the second bias circuit 210 includes at least: a first resistor module and a diode module, wherein: A first resistor module, wherein a first terminal of the first resistor module is used to receive the input first voltage; A diode module, wherein the positive terminal of the diode module is connected to the second terminal of the first resistor module, the negative terminal of the diode module is grounded, the first terminal of the second differential amplifier circuit 220 is connected to the second terminal of the second resistor module, and / or the first terminal of the second differential amplifier circuit 220 is electrically connected to the positive terminal of the diode module.
[0034] like Figure 1 In this circuit, the second bias circuit 210 consists of a resistor R3 and a diode D1 connected in series, with the cathode of diode D1 grounded. This second bias circuit 210 converts the input voltage V1 into the operating voltage Vr of the transistors in the second differential amplifier and the fast feedthrough circuit 230, enabling the second differential amplifier circuit 220 and the fast feedthrough circuit 230 to operate normally. This improves the operational stability of the second differential amplifier circuit 220 and the fast feedthrough circuit 230, as well as the operational stability and reliability of the RF voltage conversion device in this embodiment.
[0035] In an optional embodiment of this application, the second output feedback circuit 240 includes: a first electronic switch module and a second resistor module, wherein: The first electronic switch module has its gate electrically connected to the output terminal of the fast feedthrough circuit 230, and its source is used to receive the input first voltage. The second resistor module has its first terminal electrically connected to the drain of the first electronic switch module, its second terminal grounded, and its third terminal electrically connected to the second resistor module. The first electronic switch module is used to control the magnitude of the second voltage under the action of the output voltage of the fast feedthrough circuit 230.
[0036] The second bias circuit 210 provided in this application embodiment includes: a first electronic switch module and a second resistor module, which can quickly and stably interact with the fast feedthrough circuit 230 and the second differential amplifier circuit 220 to output a stable second voltage V2, which is more stable.
[0037] In one optional embodiment of this application, the first electronic switch module includes at least one P-type transistor.
[0038] The second output feedback circuit 240 can, for example, be derived from... Figure 1 The second-stage voltage conversion module 200SLDO is composed of a P-type transistor MP1, resistor R1, and resistor R2 connected in series. When the input voltage V1 is higher than the second voltage V2, the P-type transistor MP1 in the second-stage voltage conversion module 200SLDO is closed, and the second-stage voltage conversion module 200SLDO operates in normal LDO state. The output voltage of the second output feedback circuit 240 is the second voltage V2. When V1 is lower than the second voltage, the P-type transistor MP1 in the second-stage voltage conversion module 200SLDO is opened, and the second-stage voltage conversion module 200SLDO switches to direct mode. Its output voltage changes with the input voltage V1, that is, the output voltage V2 is equal to the input voltage V1.
[0039] In one optional embodiment of this application, the third terminal of the second differential amplifier circuit 220 is electrically connected to the midpoint of the second resistor module. For example, the second resistor module includes, for example, […]. Figure 1 R1 and R2 in the circuit facilitate the calculation and control of the second input voltage Vr at the second terminal of the second differential amplifier circuit 220, as well as other voltages such as the second voltage V2 and Vo.
[0040] In an optional embodiment of this application, the fast feedthrough circuit 230 includes at least: a second electronic switch module and an inverter module, wherein: The second electronic switch module has a first control terminal for receiving control signal EnFP, an input terminal Vi of the second electronic switch module that is electrically connected to the second output terminal Vo of the second differential amplifier circuit 220, and an output terminal of the second electronic switch module that is electrically connected to the control terminal of the second output feedback circuit 240. An inverter module is electrically connected to the second control terminal of the second electronic switch module. The inverter module is used to invert the control signal and form an EnbFP input to the second control terminal EnbFP of the second electronic switch module to control the operation of the second electronic switch module.
[0041] The second electronic switch module includes at least two electrically connected N-type transistors. The inverter module includes at least one N-type transistor and one P-type transistor. That is, the fast feedthrough circuit 230 includes at least one N-type first electronic switch and second electronic switch module, as well as an inverter module composed of one N-type transistor MN3 and one P-type transistor MP3. Signal control is achieved through transistors with opposite polarities, thereby realizing the drive control of the second output feedback circuit 240. The circuit layout is simple and easy to implement, and can further simplify the circuit structure of the RF control device and save device costs while realizing the drive control of the second output feedback circuit 240.
[0042] like Figure 2 The example provided is a fast feedthrough circuit 230FP: MN1 and MN form an electronic switch, and MP3 and MN3 form an inverter. Its input reference power supply is a first voltage V1, and its output is a second voltage V2. Its output voltage V2 = (R1 + R2)Vr1 / R2. By adjusting the resistance values of R1 and R2, the desired second voltage V2 can be obtained. When the EnFP signal arrives, the FP circuit will pull down the gate port of MP1 to ground, thus making V2 = V1. When the RF component enters the switching state, the control signal EnFP will switch from 0 to VDD, and EnbFP will change from VDD to 0. Therefore, Vo changes from equal to Vi to Vo = 0, thereby... Figure 3 The pull-down transistor MP1 is forcibly turned on, thereby increasing the output voltage and providing more energy during the switching of RF components, thus accelerating the switching speed.
[0043] In an optional embodiment of this application, the above-mentioned radio frequency voltage conversion device further includes: a plurality of first-stage voltage conversion modules 100 connected in series with each other, and a second-stage voltage conversion module 200, wherein: The input terminals of the plurality of first-stage voltage conversion modules 100 are electrically connected to the input power supply, and the last-stage voltage conversion module of the plurality of first-stage voltage conversion modules 100 is electrically connected to the input terminal of the second bias circuit 210. The plurality of first-stage voltage conversion modules 100 are used to convert the voltage of the input power supply into a first voltage in stages.
[0044] like Figure 3 and Figure 4In this circuit, when the input voltage VDD of the input power supply is higher than the first voltage, the first-stage voltage conversion module 100MLDO operates in normal LDO mode, and its output voltage V1 is the first voltage. When the VDD power supply voltage is lower than the first voltage V1, the first-stage voltage conversion module 100MLDO switches to direct-through mode, and its output voltage changes with the input power supply voltage VDD, i.e., the output voltage is the value of VDD. The first voltage can be flexibly adjusted according to actual needs, for example, it can be 1.3V, etc. However, it should be noted that the first voltage V1 is not lower than the second voltage V2 output by the second-stage voltage conversion module 200.
[0045] At least one second-stage voltage conversion module 200 (e.g.) Figure 3 The input terminal of the second-stage voltage conversion module 200 is electrically connected to the output terminal of the last-stage voltage conversion module of the plurality of first-stage voltage conversion modules 100. The second-stage voltage conversion module 200 is used to convert the first voltage into a second voltage; wherein the second voltage is less than or equal to the first voltage.
[0046] This application embodiment requires providing a stable second voltage V2 for the radio frequency components. This second voltage V2 can also be flexibly adjusted according to actual needs. For example, taking a second voltage V2 = 1V, the positive voltage generation module 300 (e.g., Figure 3 If the frequency multiplication factor of the PVDD generator module is N, then the voltage output by the positive voltage generator module 300 is N. 1 V; Negative pressure generating module 400 (e.g.) Figure 3 If the frequency multiplication factor of the NVDD generator module is N, then the voltage output by the negative voltage generator module 400 is -N. 1 V.
[0047] In this embodiment, multiple interconnected first-stage voltage conversion modules 100 are used to convert the voltage of the input power supply into a first voltage in stages, and then the first voltage is converted into a second voltage based on the second-stage voltage conversion module 200, resulting in higher stability of the stepped voltage reduction.
[0048] In one optional embodiment of this application, the first-stage voltage conversion module 100 includes at least a high-dropout linear regulator; the second-stage voltage conversion module 200 includes at least a low-dropout linear regulator.
[0049] This application embodiment achieves multi-stage conversion of the input voltage through a high-voltage differential linear regulator and a low-voltage linear regulator, resulting in higher stability and further improving the stability and reliability of the radio frequency power control device 10 in this application embodiment.
[0050] Please refer to section 4. In one optional embodiment of this application, the first-stage voltage conversion module 100 includes at least: a first bias circuit 110, a first differential amplifier circuit 120, and a first output feedback circuit 130, wherein: A first bias circuit 110, the input terminal of which is electrically connected to the input power supply, and the ground terminal of which is grounded; for example Figure 4 In this circuit, a resistor R1 and diodes D1 and D2 are connected in series, with the cathode of diode D2 grounded. This first bias circuit 110 is used to convert the input voltage VDD into the operating voltage Vr of the transistors in the first differential amplifier and the first output feedback circuit 130, so that the first differential amplifier circuit 120 and the first output feedback circuit 130 can operate normally.
[0051] The first differential amplifier circuit 120 (e.g., by...) Figure 4 In the first differential amplifier circuit 120, the first terminal is electrically connected to the first bias circuit 110. The first differential amplifier circuit 120 is used to determine the output voltage Vo of a fixed gain amplifier based on the voltage difference between the operating voltage Vr output by the first bias circuit 110 and the first voltage V1 output by the first output feedback circuit 130.
[0052] A first output feedback circuit 130 is provided. The control terminal of the first output feedback circuit 130 is electrically connected to the second terminal of the first differential amplifier circuit 120. The power supply terminal of the first output feedback circuit 130 is electrically connected to the input power supply. The output terminal of the first output feedback circuit 130 is electrically connected to the third terminal of the first differential amplifier circuit 120. The first output feedback circuit 130 is used to output the first voltage from the third terminal based on the output voltage of the second terminal of the first differential amplifier circuit 120 and the voltage of the input power supply. This first output feedback circuit 130 can, for example, be composed of... Figure 4 The first-stage voltage conversion module 100MLDO is composed of a P-type transistor MP1 and a resistor R2 connected in series. When the input voltage VDD is higher than the first voltage V1, the P-type transistor MP1 in the first-stage voltage conversion module 100MLDO is closed, and the first-stage voltage conversion module 100MLDO operates in normal LDO state. The output voltage of the first output feedback circuit 130 is the first voltage V1. When the VDD power supply voltage is lower than the first voltage, the P-type transistor MP1 in the first-stage voltage conversion module 100MLDO is opened, and the first-stage voltage conversion module 100MLDO switches to the pass-through mode. Its output voltage changes with the power supply voltage VDD of the input power supply, that is, the output voltage V1 is equal to the input voltage VDD.
[0053] The current formulas for diodes D1 and D2 and resistor R1 in the first bias circuit 110 are as follows: (1) (2) (3) In the above formulas (1)-(3), I D1 I represents the current in diode D1. D2 I represents the current in diode D2. R1 This indicates the current in diode R1. This indicates the turn-on voltage of diodes D1 and D2. It is determined by the area of the diode.
[0054] Depend on Figure 4 The circuit shows = = Since diodes D1 and D2 have the same dimensions, Vr = 2. V1, therefore we know By selecting the resistor value of R1 and the size of the diode, we can obtain the required Vr voltage (e.g., 1.3V). The differential amplifier circuit (Amp) feeds back the voltage V1 output from the first-stage voltage conversion module 100 to the input of the first output feedback circuit 130. According to the virtual short and virtual open properties of the input port of the first output feedback circuit 130, when the VDD voltage is greater than 1.3V, V1 = Vr. When the VDD voltage is less than 1.3V, V1 will be less than Vr. The first output feedback circuit 130 will amplify this voltage difference, thereby pulling Vo to 0V. This will cause the MP1 transistor to be turned on, thus making the V1 voltage follow the VDD voltage.
[0055] For example, if the target output voltage is 3V and the input voltage is 1V, the equivalent resistance in the voltage conversion module and the preset voltage can be determined according to the voltage and current calculation formula, which will not be elaborated here. It should be explained that the voltage conversion module in this embodiment is multi-stage, that is, the voltage of the input power supply is gradually and smoothly reduced to the second voltage, which is more stable than the traditional method of using a single-stage voltage conversion module to directly convert to a single stage; at the same time, a wider range of output voltage can be output through the positive voltage generation module 300 and the negative voltage generation circuit.
[0056] In an optional embodiment of this application, the above-mentioned radio frequency voltage conversion device further includes: a positive voltage generation module 300, wherein, A positive voltage generating module 300 is provided. The input terminal of the positive voltage generating module 300 is electrically connected to the output terminals of multiple first-stage voltage conversion modules 100. The output terminal of the positive voltage generating module 300 is used to connect to the positive voltage control terminal of the radio frequency component. The positive voltage generating module 300 is used to convert the second voltage into a target positive voltage and output it. The positive voltage generating module 300 is used to generate a positive voltage and can be composed of any circuit that can realize positive voltage conversion and output. The embodiments of this application do not make specific limitations and can be flexibly adjusted according to the actual situation.
[0057] In one optional embodiment of this application, the positive pressure generating module 300 includes at least: a positive pressure generating circuit for multiple pressures.
[0058] When the input power supply voltage VDD decreases, the positive voltage generating circuit of the multiple voltage multiplier generates a sufficiently high positive voltage, while the negative voltage generating circuit converts the positive voltage into a sufficiently low negative voltage, thereby providing a wider range of output voltages to provide a wider range of drive voltages for RF components.
[0059] In one optional embodiment of this application, the positive voltage generating circuit of multiple voltages is a positive voltage generating circuit of three voltages.
[0060] For example, taking the second voltage V2=1V as an example, the positive voltage generating module 300 (e.g.) Figure 3 If the frequency multiplication factor of the PVDD generator module is 3, then the output voltage of the positive voltage generator module 300 is 3V; the output voltage of the negative voltage generator module 400 (e.g., ...) is 3V. Figure 3 If the frequency multiplication factor of the NVDD generator module is 3, then the voltage output by the negative voltage generation module 400 is -3 V.
[0061] The positive voltage generating circuit of the multiple voltage in this application embodiment is a positive voltage generating circuit of three voltages. It can save the surface area of the circuit board, reduce the size of the components, and reduce the cost of the components while ensuring that a wider range of power supply voltages are provided.
[0062] like Figure 5 This is an example of a PVDD generator, where the input signals are clkp and clkn, and the output voltage is PVDD. The PVDD generator consists of multiple transistors and capacitors, for example... Figure 5In the circuit, transistors MN1, MP1, MN2, MP2, MN3, MP3, MN4, MP4, C1, and C2 constitute the first-stage voltage multiplier circuit. This first-stage voltage multiplier circuit multiplies the VDD voltage to VDD + Vpeakclk, where Vpeakclk is the peak voltage of clkp and clkn, equal to VDD. Transistors MN5, MP5, MN6, MP6, MN7, MP7, MN8, MP8, C3, and C3 constitute the second-stage voltage multiplier circuit. This second-stage voltage multiplier circuit multiplies the voltage VDD + Vpeakclk output from the first-stage voltage multiplier circuit to VDD + 2. Vpeakclk. In this second-stage voltage multiplier circuit, VDD = Vpeakclk = V2, therefore the PVOUT output voltage of this circuit is 3. V2, thus achieving the purpose of voltage multiplication.
[0063] A negative pressure generating module 400 is provided, the input terminal of which is electrically connected to the output terminal of the positive pressure generating module 300. The output terminal of the negative pressure generating module 400 is used to connect to the negative pressure control terminal of the radio frequency element. The negative pressure generating module 400 is used to convert the target positive voltage into the target negative voltage and output it.
[0064] The input terminal of the negative voltage generating module 400 is electrically connected to the output terminal of the positive voltage generating module 300. The output terminal of the negative voltage generating module 400 is used to connect to the negative voltage control terminal of the radio frequency element. The negative voltage generating module 400 is used to convert the target positive voltage into a target negative voltage and output it. Corresponding to the positive voltage generating module 300, the negative voltage generating module 400 generates a negative voltage with the opposite polarity. For example, if the output voltage of the positive voltage generating module 300 is 3V, the corresponding output voltage of the negative voltage generating module 400 is -3V. It should be noted that the negative voltage generating module 400 can directly convert the voltage output by the positive voltage generating module 300, or it can generate a voltage with the opposite polarity using the same method as the positive voltage generating module 300.
[0065] like Figure 6 Here is an example of a negative voltage generating circuit: When the input clkp is low: the gate voltage of MN2 and MP2 is -PVDD, so MP2 is open, the right plate of capacitor C1 discharges to 0 through MP2, and the left plate of C1 is charged to PVDD. MN2 is in the off state at this time. When clkp switches to a high level, the voltage of the left plate of C1 changes abruptly from PVDD to 0, causing the capacitance of the right plate of C1 to change abruptly from 0 to -PVDD. At this time, the gate voltage of MP2 and MN2 is 0, MP2 is in the off state, and MN2 is in the on state, thus passing -PVDD to NVDD.
[0066] When the input clkp is high: the gate voltages of MN2 and MP2 are VDD + VDD, MN2 is open, the right plate of capacitor C1 discharges to VDD through MN2, and the left plate of C1 discharges to 0. MP2 is in the off state at this time. However, when clkp switches to a low level, the voltage of the left plate of C1 changes abruptly from 0 to VDD, causing the voltage of the right plate of C1 to change abruptly from VDD to 2. VDD, and at this time the gate voltage of MP2 and MN2 is VDD, so MP2 is in the open state and MN2 is in the closed state, thus turning 2 PVDD is passed to the next level.
[0067] Meanwhile, the gate voltages of MN6 and MP6 are VDD+2. Peak, MN2 is open, the right plate of capacitor C3 discharges through MN6 to VDD+VDD (Net1 voltage), and the left plate of C3 discharges to 0. MP2 is in the off state at this time. When the input clkn switches to low level, the voltage of the left plate of C3 changes abruptly from 0 to VDD, causing the capacitance of the right plate of C3 to change abruptly from VDD+VDD to VDD+2. VDD, while at this time the gate voltage of MP6 and MN6 is VDD+VDD, MP6 is in the open state, and MN6 is in the closed state, so VDD+2 VDD is passed to PVDD.
[0068] Firstly, in traditional solutions, the RF power control device 10 only has one power management module. The voltage output by the power management module is directly used to drive the RF components. If the power supply voltage of the RF components is high, the corresponding output voltage of the power management module will also be high, which can easily lead to exceeding the safe operating voltage, posing a high risk. The RF power control device 10 provided in this application includes: a multi-stage voltage conversion module, a positive voltage generation module 300, and a negative voltage generation module 400, which gradually and smoothly reduces the voltage of the input power supply to a second voltage, resulting in higher stability compared to the traditional method of using a single-stage voltage conversion module for direct conversion. Secondly, compared to the single-stage voltage conversion in the traditional method, the embodiment of this application performs voltage conversion step by step through multi-stage voltage conversion modules. The required input power voltage is lower and more controllable, and the flexibility and safety are both higher, as the electrical parameters such as equivalent resistance in each voltage conversion module can be flexibly adjusted. Thirdly, in this embodiment of the application, through the voltage adjustment of the input power supply of the multi-stage voltage conversion module and the internal graded processing, a relatively stable second voltage can be output. Then, through the conversion of the positive voltage generation module 300 and the negative voltage generation module 400, a wider range of output voltages is formed. In particular, when the voltage of the input power supply decreases, the multi-stage voltage conversion module stably converts the voltage of the input power supply into the second voltage, providing a stable drive signal for the radio frequency components, which is safer and more reliable.
[0069] In one optional embodiment of this application, the radio frequency voltage conversion device includes at least a low dropout linear regulator.
[0070] The first-stage voltage conversion module 100 includes at least a high-dropout linear regulator; and / or, the radio frequency voltage conversion device includes at least a low-dropout linear regulator.
[0071] The embodiments of this application achieve multi-stage conversion of the input voltage through a high-voltage differential linear regulator and a low-voltage linear regulator, resulting in higher stability and further improving the stability and reliability of the RF power control device 10 of the embodiments of this application.
[0072] In one optional embodiment of this application, the number of the first-stage voltage conversion module 100 and the radio frequency voltage conversion device is one.
[0073] This application embodiment achieves graded adjustment of the input power supply voltage through a first-stage voltage conversion module 100 and an RF voltage conversion device in series, thereby reducing the surface area of the circuit board, the size of the device, and the cost of the device while satisfying the function of flexible voltage adjustment.
[0074] In an optional embodiment of this application, the above-mentioned radio frequency voltage conversion device further includes: a driving circuit, wherein: The driving circuit has its input terminal electrically connected to the input terminal of the second output feedback circuit 240, and its driving terminal electrically connected to the radio frequency component. The driving circuit is used to drive the radio frequency component to work based on the second voltage, thereby improving the working stability and reliability of the radio frequency component.
[0075] One embodiment of this application provides a radio frequency device, including: The radio frequency (RF) component can be an RF switch or other RF device. This application does not impose specific limitations on the embodiments and can be flexibly adjusted according to the actual situation.
[0076] The radio frequency voltage conversion device as described in any of the preceding claims is electrically connected to the radio frequency element, wherein the radio frequency element is used to operate under the action of the second voltage output by the radio frequency voltage conversion device.
[0077] The beneficial effects of the RF power control device 10 have been described in detail in the above embodiments and will not be repeated here. Based on the fact that the RF power control device 10 supplies power to RF components, it rapidly increases the output second voltage, provides greater energy during RF component switching, and accelerates the switching speed. This solves the current urgent need for a device with high RF switch switching efficiency and achieves the technical effect of improving the switching efficiency of RF components.
[0078] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0079] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A radio frequency voltage conversion device, characterized in that, include: The second bias circuit is used to receive the input first voltage and convert the first voltage into a bias voltage output. The second differential amplifier circuit has its first terminal electrically connected to the second bias circuit. A fast feedthrough circuit, wherein the input terminal of the fast feedthrough circuit is electrically connected to the second terminal of the second differential amplifier circuit, and the ground terminal of the fast feedthrough circuit is grounded; The fast feedthrough circuit includes at least: a second electronic switch module, wherein a first control terminal of the second electronic switch module is used to receive a control signal, an input terminal of the second electronic switch module is electrically connected to a second output terminal of the second differential amplifier circuit, and an output terminal of the second electronic switch module is electrically connected to a control terminal of a second output feedback circuit; and an inverter module, electrically connected to a second control terminal of the second electronic switch module, wherein the inverter module is used to invert the control signal and input it to the second control terminal of the second electronic switch module to control the operation of the second electronic switch module; the second electronic switch module includes at least two electrically connected N-type transistors; and the inverter module includes at least one N-type transistor and one P-type transistor. The second output feedback circuit has its control terminal electrically connected to the output terminal of the fast feedthrough circuit. The power supply terminal of the second output feedback circuit is used to receive the input first voltage. The output terminal of the second output feedback circuit is electrically connected to the third terminal of the second differential amplifier circuit. The second output feedback circuit is used to output a second voltage based on the output voltage of the fast feedthrough circuit and the first voltage; wherein the second voltage is less than or equal to the first voltage.
2. The radio frequency voltage conversion device according to claim 1, characterized in that, The second bias circuit includes at least: A first resistor module, wherein a first terminal of the first resistor module is used to receive the input first voltage; A diode module, wherein the positive terminal of the diode module is electrically connected to the second terminal of the first resistor module, the negative terminal of the diode module is used for grounding, the first terminal of the second differential amplifier circuit is electrically connected to the second terminal of the second resistor module, and / or the first terminal of the second differential amplifier circuit is electrically connected to the positive terminal of the diode module.
3. The radio frequency voltage conversion device according to claim 1, characterized in that, The second output feedback circuit includes: The first electronic switch module has its gate electrically connected to the output terminal of the fast feedthrough circuit, and its source is used to receive the input first voltage. The second resistor module has its first terminal electrically connected to the drain of the first electronic switch module, its second terminal grounded, and its third terminal electrically connected to the second resistor module. The first electronic switch module is used to control the output of the second voltage based on the first voltage under the action of the output voltage of the fast feedthrough circuit.
4. The radio frequency voltage conversion device according to claim 3, characterized in that, The third terminal of the second differential amplifier circuit is electrically connected to the midpoint of the second resistor module.
5. The radio frequency voltage conversion device according to claim 3, characterized in that, The first electronic switch module includes at least one P-type transistor.
6. The radio frequency voltage conversion device according to claim 1, characterized in that, Also includes: Multiple first-stage voltage conversion modules are connected in series. The input terminals of the multiple first-stage voltage conversion modules are electrically connected to the input power supply. The last-stage voltage conversion module of the multiple first-stage voltage conversion modules is electrically connected to the input terminal of the second bias circuit. The multiple first-stage voltage conversion modules are used to convert the voltage of the input power supply into the first voltage in stages.
7. The radio frequency voltage conversion device according to claim 6, characterized in that, Also includes: A positive voltage generation module, wherein the input terminal of the positive voltage generation module is electrically connected to the output terminals of a plurality of first-stage voltage conversion modules, the output terminal of the positive voltage generation module is used to connect to the positive voltage control terminal of the radio frequency component, and the positive voltage generation module is used to convert the second voltage into a target positive voltage and output it; A negative pressure generating module is provided, wherein the input terminal of the negative pressure generating module is electrically connected to the output terminal of the positive pressure generating module, the output terminal of the negative pressure generating module is used to connect to the negative pressure control terminal of the radio frequency element, and the negative pressure generating module is used to convert the target positive voltage into the target negative voltage and output it.
8. The radio frequency voltage conversion device according to claim 1, characterized in that, The radio frequency voltage conversion device includes at least: a low dropout linear regulator.
9. The radio frequency voltage conversion device according to claim 1, characterized in that, Also includes: The driving circuit has its input terminal electrically connected to the input terminal of the second output feedback circuit, and its driving terminal electrically connected to the radio frequency component. The driving circuit is used to drive the radio frequency component to work based on the second voltage.
10. A radio frequency device, characterized in that, include: Radio frequency components; The radio frequency voltage conversion device according to any one of claims 1-9 is electrically connected to the radio frequency element, and the radio frequency element operates based on the second voltage output by the radio frequency voltage conversion device.
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