Semiconductor workpiece processing station and processing apparatus

Abstract

The application provides a semiconductor workpiece processing seat and a processing device. The semiconductor workpiece processing seat comprises a base, a plurality of high support frames and a plurality of low support frames. The top of the base is provided with a recess structure for carrying to improve the carrying capacity. The plurality of high support frames are arranged on the top surface of the base and are spaced around the recess structure. The top surface of the high support frame comprises a high supporting surface, and the heights of the high supporting surfaces are the same and are spaced around the recess structure. The plurality of low support frames are arranged on the top surface of the base and are spaced around the recess structure. At least one low support frame is located between adjacent high support frames. The top surface of the low support frame comprises a low supporting surface, and the heights of the low supporting surfaces are the same and are spaced around the recess structure. The top surface of the base is provided with carriers with different heights to realize double-layer carrying and improve the carrying capacity. While the stability of support is ensured, the processing quality and processing efficiency of the surface of the object to be processed are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a semiconductor workpiece processing holder and processing equipment. Background Technology

[0002] Graphite disks, commonly used in semiconductor processing, require cleaning for reuse due to their high demand, frequent use, and high cost. Because graphite disks are exposed to the deposition process environment for extended periods, surface deposits can negatively impact film quality if not treated promptly. Typically, reactive gases such as chlorine are used as the reaction medium to bake the graphite disks. Under appropriate baking temperature and pressure, these gases react with the deposits on the disk surface, causing them to peel off.

[0003] Since the majority of deposits on the graphite disk surface are distributed on the support surface and sides, and it is precisely these deposits that, once peeled off under the temperature and pressure of the deposition process, can easily fall onto the wafer surface under the influence of the gas flow field, thus affecting the film quality. Existing graphite disk baking racks typically have a series of slots arranged horizontally, with each graphite disk held in the slot so that its support surface (i.e., the side used to support the wafer) is perpendicular to the horizontal plane. This slotting method obstructs part of the top and side surfaces of the graphite disk, resulting in incomplete removal of deposits.

[0004] Furthermore, in wafer deposition, due to the adhesion between the bottom surface of the wafer and the underlying graphite disk, deposition occurs on the top and sides. When the quality of the thin film deposited on the top surface of the wafer does not meet the requirements, the wafer can be reused if the film is peeled off from the wafer by reacting with a reactive medium, such as a reactive gas.

[0005] Therefore, it is necessary to develop a new type of semiconductor workpiece processing fixture to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0006] The purpose of this invention is to provide a semiconductor workpiece processing stand and a processing device having the semiconductor workpiece processing stand, which can make full use of the base area to increase the load-bearing capacity, and improve the processing quality and efficiency of the surface of the workpiece to be processed while providing stable support.

[0007] On one hand, the present invention provides a semiconductor workpiece processing holder, comprising:

[0008] The base has a recessed structure at the top;

[0009] Several high support frames are disposed on the top surface of the base and arranged at intervals around the recessed structure. The top surface of the high support frame includes a high support surface. The high support surfaces are of the same height and are arranged at intervals around the recessed structure to support an object to be processed.

[0010] Several low support frames are disposed on the top surface of the base and arranged at intervals around the recessed structure. At least one of the low support frames is located between adjacent high support frames. The top surface of the low support frame includes a low support surface. The low support surfaces are of the same height and are arranged at intervals around the recessed structure to support another object to be processed.

[0011] The height of the higher support surface is greater than the height of the lower support surface, so that the other object to be processed is located below the first object to be processed.

[0012] On the other hand, the processing apparatus provided by the present invention includes a processing chamber, wherein the semiconductor workpiece processing seat is accommodated in the processing chamber, and the semiconductor workpiece processing seat extends along the axial direction of the processing chamber.

[0013] The beneficial effects of the semiconductor workpiece processing stand and the processing equipment described in this invention are as follows: the top of the base is provided with a recessed structure for bearing and to increase the load-bearing capacity; a plurality of high support frames are provided on the top surface of the base and arranged at intervals around the recessed structure; the top surface of the high support frame includes a high support surface, and each of the high support surfaces is of the same height and is arranged at intervals around the recessed structure; a plurality of low support frames are provided on the top surface of the base and arranged at intervals around the recessed structure; at least one of the low support frames is located between adjacent high support frames; the top surface of the low support frame includes a low support surface, and each of the low support surfaces is of the same height and is arranged at intervals around the recessed structure. This fully utilizes the different heights of the carriers on the top surface of the base to achieve double-layer bearing and increase the load-bearing capacity, and improves the processing quality and efficiency of the surface of the workpiece to be processed while providing stable support.

[0014] Optionally, a frame is suspended within the recessed structure, and the recessed structure extends from the middle of the frame.

[0015] Optionally, at least one grid support structure is provided between the frame and the inner wall of the recessed structure.

[0016] Optionally, the base sidewall has at least one sidewall hollow structure communicating with the recessed structure.

[0017] Optionally, the high support frame includes a plurality of high support portions arranged at intervals around the recessed structure, and high pillars detachably connected to the bottom of each of the high support portions to form a high support layer. Each of the high pillars is disposed on the top surface of the base and arranged at intervals around the recessed structure. The top surface of each of the high support portions includes the high support surface. The high pillars are radially away from the axis of the recessed structure relative to the high support surface of the corresponding detachably connected high support portion.

[0018] Optionally, the low support frame includes a plurality of low support portions arranged at intervals around the recessed structure, and low pillars detachably connected to the bottom of each of the low support portions to form a low support layer. Each of the low pillars is disposed on the top surface of the base and arranged at intervals around the recessed structure. The top surface of each of the low support portions includes the low support surface. The low pillars are radially away from the axis of the recessed structure relative to the low support surface of the corresponding detachably connected low support portion.

[0019] Optionally, at least one of the lower supports is located between adjacent higher supports, and the height of each higher support is greater than the height of each lower support.

[0020] Optionally, the number of high-support layers and the number of low-support layers are both at least 2.

[0021] Optionally, at least a portion of the high support and / or at least a portion of the low support located on the same side are coaxial. Optionally, the high support is detachably rotatably connected to the high support and / or the low support adjacent to the high support and / or the low support adjacent to the high support and / or the low support along the axial direction of the base.

[0022] Optionally, either the high support layer or the low support layer is located between two adjacent high support layers, between two adjacent low support layers, or between adjacent high support layers and low support layers. The heights of the high support surfaces in the same high support layer are the same, and the heights of the low support surfaces in the same low support layer are the same.

[0023] Optionally, each of the high support portions may be detachably connected to another high pillar and another high support portion in sequence, or may be detachably connected to another low pillar and another low support portion in sequence.

[0024] Optionally, each of the lower support portions may be detachably connected to another higher support and another higher support portion in sequence, or each may be detachably connected to another lower support and another lower support portion in sequence.

[0025] Optionally, the top of either the high support portion or the low support portion includes a distal axial surface, a support surface with a height lower than the distal axial surface, and a limiting surface located between the distal axial surface and the support surface and connecting the distal axial surface and the support surface respectively to form a stepped structure, wherein the distal axial surface is farther away from the axis of the recessed structure than the support surface.

[0026] Optionally, the semiconductor workpiece processing holder further includes a hollow support plate disposed on at least one of the high support layers or at least one of the low support layers, wherein the high pillar of the same high support layer or the low pillar of the same low support layer penetrates the edge of the hollow support plate, or the edge of the hollow support plate is supported by each high support surface of the same high support layer or by each low support surface of the same low support layer.

[0027] Optionally, the semiconductor workpiece processing holder further includes a shielding plate disposed on at least one of the high support layers or at least one of the low support layers, wherein at least a portion of the high pillars of the same high support layer or at least a portion of the low pillars of the same low support layer penetrates the edge of the shielding plate, or the edge of the shielding plate is supported by each of the high support surfaces of the same high support layer or by each of the low support surfaces of the same low support layer.

[0028] Optionally, the shielding plate has a central protrusion and its outer diameter increases from top to bottom. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the structure of the semiconductor workpiece processing holder provided by the present invention;

[0030] Figure 2 This invention provides a schematic diagram of the structure of a high support portion;

[0031] Figure 3 This invention provides a schematic diagram of a tall support structure;

[0032] Figure 4 An assembly diagram of several high support frames and several low support frames supporting the object to be processed, provided by the present invention;

[0033] Figure 5 This invention provides a schematic diagram illustrating the relative positional relationship between several high support frames and low support frames, which is equivalent to... Figure 1 The plane containing each high support frame and each low support frame is abstracted as the dotted line shown in the figure to show the height relationship between each high support frame and each low support frame on the dotted line.

[0034] Figure 6 This is a schematic diagram illustrating another relative positional relationship between several high support frames and low support frames provided by the present invention, which is equivalent to... Figure 1 The plane containing each high support frame and each low support frame is abstracted as the dotted line shown in the figure to show the height relationship between each high support frame and each low support frame on the dotted line.

[0035] Figure 7 This invention provides a schematic diagram of the structure of a base;

[0036] Figure 8This invention provides a schematic diagram of another base structure;

[0037] Figure 9 This invention provides a schematic diagram of an assembly structure between two carriers and a hollow support plate;

[0038] Figure 10 This invention provides a schematic diagram of another assembly structure between two carriers and a hollow support plate;

[0039] Figure 11 This invention provides a schematic diagram of a first type of hollow support plate structure;

[0040] Figure 12 A schematic diagram of a second type of hollow support plate structure is provided for this invention;

[0041] Figure 13 This invention provides a schematic diagram of an assembly structure between two carriers and a shielding plate;

[0042] Figure 14 This invention provides a schematic diagram of another assembly structure between two carriers and a shielding plate. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0044] This invention provides a semiconductor workpiece processing holder, such as... Figure 1 The diagram shows a base 1, high support frames 2, and several low support frames 20. A recessed structure 11 is formed on the top surface of the base 1. Several high support frames 2 are disposed on the top surface of the base 1 and arranged at intervals around the recessed structure 11, with spacing between adjacent high support frames 2 to facilitate the flow of gaseous processing media. Several low support frames 20 are disposed on the top surface of the base 1 and arranged at intervals around the recessed structure 11. One low support frame 20 is located between adjacent high support frames 2.

[0045] In this embodiment, the arrangement of the high support frame 2 and the low support frame 20 can be flexibly adjusted according to the support requirements. For example, at least one low support frame 20 is provided between adjacent high support frames 2. Or, for example, no low support frame 20 is provided between some adjacent high support frames 2.

[0046] In some embodiments, reference is made to Figure 1 and 5 Taking the low support frames 20 and high support frames 2 located on the top surface of the base 1 as examples: the top surface of the low support frame 20 includes a low support surface 221, with each low support surface 221 having the same height and arranged at intervals around the recessed structure 11; the top surface of the high support frame 2 includes a high support surface 222, with each high support surface 222 having the same height and arranged at intervals around the recessed structure 11. The height of the high support surface 222 is greater than the height of the low support surface 221. This structural design makes full use of the space on the top surface of the base 1 to form carriers of different heights, achieving double-layer bearing to increase the load-bearing capacity, and improving the processing quality and efficiency of the surface to be processed while providing stable support.

[0047] In some embodiments, reference is made to Figure 1 and Figure 2 The high support frame 2 includes a plurality of high support portions 22 spaced apart around the recessed structure 11, and high pillars 23 detachably connected to the bottom of each high support portion 22 to form a high support layer. Each high pillar 23 is disposed on the top surface of the base 1 and spaced apart around the recessed structure 11, and the top surface of each high support portion 22 includes a high support surface 222. The high pillar 23 is farther away from the axis of the recessed structure 11 relative to the corresponding high support surface 222.

[0048] In some embodiments, reference is made to Figure 1 The low support frame 20 includes a plurality of low support portions 220 spaced apart around the recessed structure 11, and low support columns 230 detachably connected to the bottom of each low support portion 220 to form a low support layer. Each low support column 230 is disposed on the top surface of the base 1 and spaced apart around the recessed structure 11. The top surface of each low support portion 220 includes a low support surface (not shown in the figure) that is lower than the high support surface 222. The low support columns 230 are farther away from the axis of the recessed structure 11 relative to the corresponding low support surface (not shown in the figure).

[0049] The high support column 23 is farther away from the axis of the recessed structure 11 relative to the corresponding high support surface 222, and the low support column 230 is farther away from the recessed structure 11 relative to the corresponding low support surface (not shown in the figure). This makes it so that after the object to be treated 3 is supported by the various support surfaces of the same layer, the supports set above these support surfaces of the same layer will surround the object to be treated 3, thereby further limiting the object to be treated 3.

[0050] It is worth noting that: starting from the base 1, the height of the first high support layer is higher than the height of the first low support layer to achieve double support. The radial dimensions of the objects to be processed supported by each layer can be the same or different. Specifically, it can be adjusted by the length of the high support part 22 and the low support part 220 extending toward the central axis of the base 1.

[0051] In some embodiments, the top of either the high support portion 22 or the low support portion 220 includes a distal surface, a support surface, and a limiting surface. (See also...) Figures 1 to 3 Taking the high support portion 22 as an example, the top of the high support portion 22 includes a distal axis surface 221, a support surface 222 with a height lower than the distal axis surface 221, and a limiting surface 223 located between the distal axis surface 221 and the support surface 222 and connecting the distal axis surface 221 and the support surface 222 respectively, to form a high support portion 221. Figure 2 The stepped structure is shown. The area enclosed by the sidewall 224 of each high support 22 along the radial direction of the base 1 toward the recessed structure 11 is a hollow area. The support surfaces 222 are of the same height and surround the recessed structure 11. The top structure of the low support 220 is described above and will not be repeated here.

[0052] Taking the high support frame 2 as an example: each high support column 23 is located on the top surface of the base 1 and is arranged at intervals around the recessed structure 11. Each high support part 22, which is detachably connected to the top of the corresponding high support column 23, carries the object to be processed through surface contact. This design simplifies the overall structure of the semiconductor workpiece processing seat and reduces the overall weight of the semiconductor workpiece processing seat.

[0053] Furthermore, the top surfaces of the high support portion 22 and the low support portion 220 are used to achieve surface contact support, facilitating the placement and removal of workpieces to be processed, including wafers and heavy graphite disks. This contrasts with the insertion and removal method used in existing technologies (which is unsuitable for heavy graphite disks). Therefore, this semiconductor workpiece processing holder has a wider range of applications and greater versatility. In particular, the bottom surface of a portion of the edge of the workpiece 3 is supported by the support surfaces 222 of each of the high support portions 22 or the low support portions 220, allowing the top surface and most of the bottom surface of the workpiece 3 to be fully exposed. By controlling the radial length of each support surface, a gap can be maintained between the sidewall of the workpiece 3 and the limiting surface 223 while ensuring support stability. This also allows the sidewall of the workpiece 3 to be fully exposed, facilitating maximum cleaning of the surface of the workpiece 3 by the gas processing medium.

[0054] Reference Figure 2 , Figure 3 and Figure 5The high support portion 22 and the adjacent high support column 23 are detachably connected via corresponding far-axis surfaces 221. The high support column 23 has positioning bosses (not shown in the figure) at both its upper and lower ends, and the high support portion 22 has positioning holes. The positioning bosses (not shown in the figure) are fitted into the positioning holes, enabling the detachable connection between the high support portion 22 and the high support column 23. The correspondence between the low support portion 220 and the low support column 230 is similar and will not be elaborated upon here.

[0055] In some embodiments, the high support 23 and the high support 22 are detachably connected by a threaded connection.

[0056] In some embodiments, the high support column 230 and the high support portion 220 are detachably connected by a threaded connection.

[0057] In some embodiments, a plurality of high support frames 2 on the same floor form a high support layer, and the number of high support layers is at least two. A plurality of low support frames 20 on the same floor form a low support layer, and the number of low support layers is at least two. Taking the high support layer as an example, refer to... Figure 1 , Figure 5 and Figure 6 The high support columns 23 set on the top surface of the base 1 constitute the first high support column layer. The high support parts 22 connected to each high support column 23 of the first high support column layer form the first high support layer. The first high support column layer and the first high support layer together form a high support layer. The high support layers are sequentially and detachably connected along the axial direction of the base 1 to achieve simultaneous processing of multiple objects 3 to be processed, thereby improving processing efficiency.

[0058] In some embodiments, a high support layer is used as an example, such as Figure 1 and Figure 4 As shown, the high support section 22 and the low support section 220 support different items 3 to be processed respectively. The spaces between adjacent items 3 to be processed are interconnected so as to utilize the flow of gaseous processing medium and fully contact the exposed surface to improve the processing quality. The layered support from bottom to top can make full use of the space and reduce the floor area. The design of the detachable layers makes it easy to pick up and put down the items to be processed layer by layer.

[0059] In some embodiments, the recessed structure 11 can be used to support the workpiece 3, further improving the loading utilization rate. Specifically, when different types of workpieces are used, but the processing technology, such as the process of removing impurities by thermal drying using the same gas medium, is the same, the semiconductor workpiece processing holder of this embodiment can process different types of workpieces simultaneously, such as wafers and graphite disks. In this application scenario, at least one support layer at the top can hold wafers with high cleanliness requirements, at least one support layer in the middle can hold graphite disks, and at least one support layer at the bottom and the recessed structure 11 can hold graphite disks.

[0060] In some embodiments, when the number of the high support layer and the low support layer is at least 2, refer to Figure 1 , Figure 5 and Figure 6 The high support portion 22 is detachably and rotatably connected to the high support column 23 and / or the low support column 230 adjacent to the base 1 along the axial direction, and the low support portion 220 is detachably and rotatably connected to the high support column 23 and / or the low support column 230 adjacent to the base 2 along the axial direction. For example, after removing the corresponding items to be processed carried on several high support portions 22 on the same layer, the high support portion 22 and the high support column 23 can be removed without dismantling them. Instead, the high support portion 22 can be rotated to a suitable position to fully expose the items to be processed below, allowing the items to be processed to be removed from the top, which facilitates the handling of the items.

[0061] In some embodiments, the high support 23 and / or the low support 230 located on the same side are coaxial to facilitate stable support.

[0062] In some embodiments, the high support layer and the low support layer are located in any of the following positions, such that the heights of each of the high support surfaces and / or each of the low support surfaces located in the same layer are the same: located between two adjacent high support layers; located between two adjacent low support layers; located between adjacent high support layers and low support layers.

[0063] In some embodiments, reference is made to Figure 1 , Figure 5 and Figure 6 The high support frame 2 and the low support frame 20 can be flexibly combined and installed according to usage requirements to achieve layered arrangement. The tops of the high support portions 22 in the same layer are sequentially and detachably connected to another high support column 23 and another high support portion 22, or sequentially and detachably connected to another low support column 230 and another low support portion 220. Similarly, the tops of the low support portions 220 in the same layer are sequentially and detachably connected to another high support column 23 and another high support portion 22, or sequentially and detachably connected to another low support column 230 and another low support portion 220. It is worth noting that after the above sequential detachable connection along the axis of the base 1, it can be arranged as follows: Figure 5 As shown, the high support frames 2 and 20 on the same floor are all at the same height, and the low support frames 20 on the same floor are all at the same height. However, the heights of the high support frames 2 and 20 on the same floor are different. This staggered arrangement of high and low supports can significantly expand the load-bearing capacity. Alternatively, as shown... Figure 6 The high support frame 2 and the low support frame 20 on the same floor are of the same height. In a certain floor, the high support frame 2 and the low support frame 20 may be of the same height (in which case the height of each high support surface and each low support surface is the same). This situation can provide a stronger load-bearing capacity to support heavier loads.

[0064] In some embodiments, reference is made to Figure 7 and Figure 8 A frame 111 is suspended within the recessed structure 11, extending from the middle of the frame 111. Specifically, the frame 111 is composed of multiple intersecting supports 161, with the intersecting supports 161 located at the middle of the recessed structure 11.

[0065] Furthermore, the recessed structure 11 is also connected to the hollow area. The area formed by the frame 111 within the recessed structure 11 can be used to hold and place small-sized items to be processed, such as small-sized graphite disks, effectively utilizing the space within the base 1 and improving the loading utilization rate.

[0066] Furthermore, when the types of materials to be processed are different, but the processing technology, such as the process of heating through the same gas medium, is the same, for example, wafers and graphite disks can be processed simultaneously. In this application scenario, the recessed structure 11 in the base 1, and each of the support layers arranged in at least one sequential layer closest to the recessed structure 11, can be used to support the graphite disk, while the other support layers above it are used to support the wafer; or the recessed structure 11 supports the graphite disk, and each support layer supports the wafer.

[0067] In some embodiments, the graphite disk can be placed on the frame 111 via the recessed structure 11. The frame 111 provides surface support for the object to be treated and has a small contact area, so that the exposed top surface, side walls and most of the bottom surface of the object to be treated can be effectively cleaned.

[0068] In some embodiments, reference is made to Figure 7 and Figure 8 At least one grid support structure 151 is provided between the frame 111 and the inner wall of the recessed structure 11. Specifically, the supports 161 of the frame 111 converge at the middle of the base 1 and extend in different directions to connect with the inner sidewall of the base 1. Each grid support structure 151 is located between an adjacent support 161 and the inner wall portion of the base 1 located between the two ends of the adjacent support 161, and the adjacent support 161 and the inner wall portion of the base 1 located between the two ends of the adjacent support 161 constitute the bottom solid area. A second object to be processed, such as a small graphite disk, can be placed on the top surface of each grid support structure 151.

[0069] In some embodiments, the edge of the grid support structure 151 is connected to the middle of the side wall of the corresponding bracket 161 and the middle of the inner side wall of the corresponding base 1 to achieve suspension, so that the height of the grid support structure 151 is less than the height of the frame 111, thereby enabling gas flow space between the top and bottom of the grid support structure 151, which is conducive to the flow of processing gas and maximizes contact with and action on the bottom surface of the corresponding placed object to be processed, thereby improving the processing quality and processing efficiency.

[0070] In some embodiments, reference is made to Figure 7 and Figure 8The base 1 has at least one side wall hollow structure 12 that communicates with the recessed structure 11, which can further enhance the flow capacity of the processing medium, promote full contact between the processing medium and the surface of the object to be processed, and improve the processing quality and efficiency.

[0071] In one embodiment, the semiconductor workpiece processing holder further includes a perforated support plate disposed on at least one of the high support layers and / or at least one low support layer to support a small-sized workpiece 3.

[0072] In some embodiments, a high column in the same high support layer or a low column in the same low support layer penetrates the edge of a perforated support plate. (See reference...) Figure 9 Taking two radially opposite high support frames 2 on the same layer as an example to support the hollow support plate 5, since the high support part 22 and the high column 23 are detachably connected, when assembling the hollow support plate 5, the high support part 22 is removed, and the hollow support plate 5 is fitted over each high column 23 so that the high column 23 passes through the edge of the hollow support plate 5. In some specific embodiments, after the hollow support plate 5 is fitted over each high column 23, it can remain stationary relative to each high column 23 and be in a horizontal support state, and it is located between adjacent high support parts 22 along the axial direction of the high column 23. The hollow support plate 5 can be used to support at least one object to be processed, effectively increasing the space available for support. Especially in some cases, if the size of the object to be processed 3 cannot meet the requirements for placement in the recessed structure 11, nor can it be supported by each high support part 22 on the same layer, it can be supported by the hollow support plate 5.

[0073] In some embodiments, the edges of the perforated support plate 5 are supported by the high support surfaces 222 of the same high support layer, or by the low support surfaces of the same low support layer. (Refer to...) Figure 10 Taking two high support frames 2 on the same layer and radially opposite each other as an example, the hollow support plate 5 is supported by two high support frames 2 on the same layer. The edge of the hollow support plate 5 contacts the support surface 222 of each high support part 22 on the same layer.

[0074] In some specific embodiments, the structure of the hollow support plate 5 can be as follows: Figures 11 to 12 As shown. (Refer to...) Figure 11 and Figure 12 The perforated support plate 5 has several support holes 51 on its edges and four top perforated areas 121 in its center, each of which is surrounded by a top solid area 122. During assembly, the perforated support plate 5 is fitted onto the corresponding high support column 23 through the support holes 51, thus positioning itself between adjacent high support portions 22 along the axial direction of the base 1. Each top perforated area 121 can support small-sized objects 3 to be processed, such as small graphite disks.

[0075] In some embodiments, the number of top cutout areas 121 is at least one. The specific number and distribution can be flexibly adjusted according to usage requirements.

[0076] During heat treatment, impurities peel off from the surface of the workpiece from the upper layer and fall onto the surface of the workpiece from the lower layer. Impurities falling from the top of the processing chamber also land on the workpiece. When the workpiece requires a high degree of cleanliness, such as a wafer, this can cause secondary contamination. In one embodiment, when the number of support layers is at least two, the semiconductor workpiece processing holder further includes a shielding plate disposed on at least one of the support layers. The shielding plate blocks impurities falling from the upper layer or from the top of the processing chamber.

[0077] In some embodiments, the shielding plate is a flat plate, with a tall support column in the same high support layer penetrating through the edge of the shielding plate, or a low support column in the same low support layer penetrating through the edge of the shielding plate. For specific implementation details, please refer to the foregoing description. Figure 9 The difference in the discussion is that the hollow support plate 5 is replaced with a shielding plate.

[0078] In some embodiments, the shielding plate is a flat plate, and the edges of the shielding plate are supported by the high support surfaces of the same high support layer, or by the low support surfaces of the same low support layer. For specific implementation details, please refer to the aforementioned description. Figure 10 The difference in the discussion is that the hollow support plate 5 is replaced with a shielding plate.

[0079] In some embodiments, the shielding plate has a central bulge, and at least part of its outer wall is inclined to the respective support surfaces of the same support layer. Specifically, the shielding plate has a central bulge and its outer diameter increases from top to bottom.

[0080] In some embodiments, reference is made to Figure 13 Taking two radially opposite high support frames 2 on the same layer supporting a shielding plate 21 as an example, since the high support portion 22 and the high column 23 are detachably connected, when assembling the shielding plate 21, the high support portion 22 is removed, and the shielding plate 21 is fitted over each high column 23 so that the high column 23 passes through the edge of the shielding plate 21. In some specific embodiments, after the shielding plate 21 is fitted over each high column 23, it can remain stationary relative to each high column 23 and is located between adjacent high support portions 22 along the axial direction of the high column 23.

[0081] In some embodiments, reference is made to Figure 14 Taking two tall support frames 2 on the same floor and radially opposite each other as an example, the shielding plate 21 is supported by two tall support frames 2 on the same floor. The edge of the shielding plate 21 contacts the support surface 222 of each tall support part 22 on the same floor.

[0082] In some embodiments, when the shielding plate 21 is positioned close to the base 1, the recessed structure 11 penetrates at least one shielding plate 21.

[0083] In some embodiments, the shielding plate 21 may specifically be a cone, frustum, pyramid, or frustum pyramid structure.

[0084] In one embodiment, within the same support layer, at least one set of adjacent high pillars 23, at least one set of adjacent low pillars 230, or at least one set of adjacent high pillars 23 and low pillars 230 can be connected by a reinforcing structure to enhance support capacity and stability. For example, taking the reinforcing structure between adjacent high pillars 23 as an example, the reinforcing structure can be an arc-shaped plate, with its two ends fixedly connected to the sidewalls of the adjacent high pillars 23.

[0085] Meanwhile, this invention also provides a processing device, including a processing chamber, in which the semiconductor workpiece processing seat is accommodated, such that the semiconductor workpiece processing seat extends axially along the processing chamber. Based on this design of the semiconductor workpiece processing seat, this processing device, while meeting the requirements for carrying the workpiece to be processed, fully utilizes the space in the height direction of the processing chamber, improving space utilization, and facilitating the flow of the processing medium from various surfaces of the workpiece to be processed, thereby improving the processing quality of the workpiece.

[0086] In one embodiment, the processing device is a baking device. The wafer or graphite disk is placed on a semiconductor workpiece processing seat, and then the semiconductor workpiece processing seat is placed in a processing chamber. A gas processing medium flows through the processing chamber and flows to the surface of the wafer or graphite disk on the semiconductor workpiece processing seat. Combined with the baking effect, the surface of the wafer or graphite disk is processed.

[0087] In one embodiment, the semiconductor workpiece processing holder further includes a safety device detachably mounted on the top of the base 1 and surrounding several high support frames 2 and several low support frames 20. This safety device essentially acts as a cover over the top of the base 1, enclosing all the high and low support frames 2 and the workpieces they carry, thus limiting the movement of all the high and low support frames 2 and the workpieces. During transport after loading, if the workpiece slips out of the bearing area, this safety device can prevent it from doing so. Furthermore, its detachable design allows for easy removal of the safety device after transport.

[0088] In one embodiment, the safety device adopts a limiting cylinder, and the base 1 is provided with a limiting groove. During transportation, the lower end of the limiting cylinder is embedded in the limiting groove.

[0089] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor workpiece processing holder, characterized in that, include: The base has a recessed structure at the top; A plurality of high support frames are disposed on the top surface of the base and arranged at intervals around the recessed structure. The top surface of the high support frame includes a high support surface. The high support surfaces are of the same height and are arranged at intervals around the recessed structure to support an object to be processed. The high support frame includes a plurality of high support parts arranged at intervals around the recessed structure, and high pillars detachably connected to the bottom of each high support part to form a high support layer. A plurality of low support frames are disposed on the top surface of the base and arranged at intervals around the recessed structure, at least one of the low support frames being located between adjacent high support frames. The top surface of each low support frame includes a low support surface, and the low support surfaces are of the same height and arranged at intervals around the recessed structure to support another object to be processed. Each low support frame includes a plurality of low support portions arranged at intervals around the recessed structure, and low pillars detachably connected to the bottom of each low support portion to form a low support layer. The higher support surface is greater than the lower support surface, so that the other object to be processed is located below the first object to be processed. The number of high support layers and the number of low support layers are both at least 2; the high support portion is detachably rotatably connected to the high support column and / or the low support column adjacent to the base axis, and the low support portion is detachably rotatably connected to the high support column and / or the low support column adjacent to the base axis.

2. The semiconductor workpiece processing holder according to claim 1, characterized in that, A frame is suspended within the recessed structure, and the recessed structure extends from the middle of the frame.

3. The semiconductor workpiece processing holder according to claim 2, characterized in that, At least one grid support structure is provided between the frame and the inner wall of the recessed structure.

4. The semiconductor workpiece processing holder according to claim 1, characterized in that, The base has at least one sidewall hollow structure that communicates with the recessed structure.

5. The semiconductor workpiece processing holder according to claim 1, characterized in that, Each of the high support columns is disposed on the top surface of the base and arranged at intervals around the recessed structure. The top surface of each of the high support portions includes the high support surface. The high support column is radially away from the axis of the recessed structure relative to the high support surface of the corresponding detachably connected high support portion.

6. The semiconductor workpiece processing holder according to claim 5, characterized in that, Each of the low support columns is disposed on the top surface of the base and arranged at intervals around the recessed structure. The top surface of each low support portion includes the low support surface. The low support column is radially away from the axis of the recessed structure relative to the low support surface of the corresponding detachably connected low support portion.

7. The semiconductor workpiece processing holder according to claim 6, characterized in that, At least one of the lower supports is located between adjacent higher supports, and the height of each higher support is greater than the height of each lower support.

8. The semiconductor processing support device according to claim 1, characterized in that, At least some of the high pillars and / or at least some of the low pillars located on the same side are coaxial.

9. The semiconductor workpiece processing holder according to claim 1, characterized in that, The high support layer and the low support layer are located between two adjacent high support layers, between two adjacent low support layers, or between adjacent high support layers and low support layers. The high support surfaces of the same high support layer have the same height, and the low support surfaces of the same low support layer have the same height.

10. The semiconductor workpiece processing holder according to claim 9, characterized in that, Each of the high support sections is sequentially and detachably connected to another high pillar and another high support section, or sequentially and detachably connected to another low pillar and another low support section.

11. The semiconductor workpiece processing holder according to claim 9, characterized in that, Each of the aforementioned low support portions is sequentially and detachably connected to another high support column and another high support portion at its top, or sequentially and detachably connected to another low support column and another low support portion.

12. The semiconductor workpiece processing holder according to claim 6, characterized in that, The top of either the high support portion or the low support portion includes a distal axial surface, a support surface with a height lower than the distal axial surface, and a limiting surface located between the distal axial surface and the support surface and connecting the distal axial surface and the support surface respectively to form a stepped structure, wherein the distal axial surface is farther away from the axis of the recessed structure than the support surface.

13. The semiconductor workpiece processing holder according to claim 6, characterized in that, It also includes a perforated support plate disposed in at least one of the high support layers or at least one of the low support layers, wherein the high support column of the same high support layer or the low support column of the same low support layer penetrates the edge of the perforated support plate, or the edge of the perforated support plate is supported by each high support surface of the same high support layer or by each low support surface of the same low support layer.

14. The semiconductor workpiece processing holder according to claim 6, characterized in that, It also includes a shielding plate disposed on at least one of the high support layers or at least one of the low support layers, wherein at least a portion of the high pillars of the same high support layer or at least a portion of the low pillars of the same low support layer penetrate the edge of the shielding plate, or the edge of the shielding plate is supported by each of the high support surfaces of the same high support layer or by each of the low support surfaces of the same low support layer.

15. The semiconductor workpiece processing holder according to claim 14, characterized in that, The shielding plate has a raised center and its outer diameter increases from top to bottom.

16. A processing apparatus, characterized in that, It includes a processing chamber, wherein the processing chamber accommodates the semiconductor workpiece processing seat of claim 1, such that the semiconductor workpiece processing seat extends axially along the processing chamber.

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