Carrier device for semiconductor workpiece processing and semiconductor workpiece processing apparatus

Abstract

The application provides a bearing device for semiconductor workpiece processing and a semiconductor workpiece processing equipment. The bearing device comprises a base, a guide part, a plurality of high carriers and a plurality of low carriers, and can bear a to-be-processed object containing a through hole. The guide part is arranged on the top surface of the base and extends along the axial direction of the base to pass through the through hole of the to-be-processed object. The plurality of high carriers and the plurality of low carriers are arranged on the top surface of the base and are arranged around the guide part at intervals. The height of each high supporting surface on the top surface of the high carrier is the same. The height of each low supporting surface on the top surface of the low carrier is the same and is arranged around the guide part at intervals. At least one low carrier is located between adjacent high carriers. The to-be-processed object is stably supported, the gas processing medium flows through and contacts most of the surface of the to-be-processed object, and the processing quality and efficiency of the surface of the to-be-processed object are improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a carrier device and semiconductor workpiece processing equipment for semiconductor workpiece processing. Background Technology

[0002] Graphite disks, commonly used in semiconductor processing, require cleaning for reuse due to their high demand, frequent use, and high cost. Because graphite disks are exposed to the deposition process environment for extended periods, surface deposits can negatively impact film quality if not treated promptly. Typically, reactive gases such as chlorine are used as the reaction medium to bake the graphite disks. Under appropriate baking temperature and pressure, these gases react with the deposits on the disk surface, causing them to peel off.

[0003] Since the majority of deposits on the graphite disk surface are distributed on the support surface and sides, and it is precisely these deposits that, once peeled off under the temperature and pressure of the deposition process, can easily fall onto the wafer surface under the influence of the gas flow field, thus affecting the film quality. Existing graphite disk baking racks typically have a series of slots arranged horizontally, with each graphite disk held in the slot so that its support surface (i.e., the side used to support the wafer) is perpendicular to the horizontal plane. This slotting method obstructs part of the top and side surfaces of the graphite disk, resulting in incomplete removal of deposits.

[0004] Furthermore, in wafer deposition, due to the adhesion between the bottom surface of the wafer and the underlying graphite disk, deposition occurs on the top and sides. When the quality of the thin film deposited on the top surface of the wafer does not meet the requirements, the wafer can be reused if the film is peeled off from the wafer by reacting with a reactive medium, such as a reactive gas.

[0005] Therefore, it is necessary to develop a new type of carrier device for semiconductor workpiece processing to solve the aforementioned problems in the existing technology. Summary of the Invention

[0006] The purpose of this invention is to provide a support device for semiconductor workpiece processing and a semiconductor workpiece processing equipment having the support device, which is suitable for carrying workpieces with through-hole structures, can make full use of the base area to increase the load capacity, and can improve the processing quality and efficiency of the workpiece surface while providing stable support.

[0007] In one aspect, the present invention provides a carrier device for semiconductor workpiece processing, comprising:

[0008] Base;

[0009] A guide portion is provided on the top surface of the base and extends along the axial direction of the base so that it can pass through the through hole if the middle part of the object to be processed contains a through hole;

[0010] Several high carriers are disposed on the top surface of the base and arranged at intervals around the guide portion. The top surface of the high carrier includes a high support surface. The high support surfaces are of the same height and are arranged at intervals around the guide portion to support a portion of the bottom surface of the edge of an object to be processed through surface contact.

[0011] A plurality of low carriers are disposed on the top surface of the base and arranged at intervals around the guide portion, at least one of the low carriers being located between adjacent high carriers. The top surface of the low carrier includes a low support surface. The low support surfaces are of the same height and arranged at intervals around the guide portion to support a portion of the bottom surface of the edge of another object to be processed through surface contact.

[0012] The height of the higher support surface is greater than the height of the lower support surface, so that the other object to be processed is located below the first object to be processed.

[0013] On the other hand, the semiconductor workpiece processing apparatus provided by the present invention includes a processing chamber, wherein the processing chamber accommodates the carrier device for processing the semiconductor workpiece, and the carrier device for processing the semiconductor workpiece extends along the axial direction of the processing chamber.

[0014] The beneficial effects of the bearing device and semiconductor workpiece processing equipment described in this invention are as follows: the guide portion is provided on the top surface of the base and extends along the axial direction of the base to pass through the through hole of the workpiece to be processed; a plurality of high carriers and a plurality of low carriers are provided on the top surface of the base and are arranged at intervals around the guide portion; the height of each high support surface on the top surface of the high carriers is the same; the height of each low support surface on the top surface of the low carriers is the same and they are all arranged at intervals around the guide portion; at least one low carrier is located between adjacent high carriers. This fully utilizes the different heights of carriers on the top surface of the base to achieve double-layer bearing and increase the bearing capacity. While providing stable support, it also facilitates the flow of gas processing medium and allows it to contact most of the surface of the workpiece to be processed, thereby improving the processing quality and efficiency of the surface of the workpiece to be processed.

[0015] Optionally, the high carrier includes a plurality of high support portions spaced apart around the guide portion, and high pillars detachably connected to the bottom of each of the high support portions to form a high support layer. Each of the high pillars is disposed on the top surface of the base and spaced apart around the guide portion. The top surface of each of the high support portions includes the high support surface. The high pillar is farther away from the guide portion than the high support surface of the corresponding detachably connected high support portion.

[0016] Optionally, the low carrier includes a plurality of low support portions spaced apart around the guide portion, and low pillars detachably connected to the bottom of each of the low support portions to form a low support layer. Each of the low pillars is disposed on the top surface of the base and spaced apart around the guide portion. The top surface of each of the low support portions includes the low support surface. The low pillars are farther away from the guide portion than the low support surface of the corresponding detachably connected low support portion.

[0017] Optionally, at least one of the lower supports is located between adjacent higher supports, and the height of each higher support is greater than the height of each lower support.

[0018] Optionally, the number of high support layers and the number of low support layers are both at least 2, and the guide portion passes through at least one high support layer and / or at least one low support layer from bottom to top.

[0019] Optionally, at least some of the high pillars and / or at least some of the low pillars located on the same side are coaxial.

[0020] Optionally, the high support portion is detachably rotatably connected to the high support column and / or the low support column adjacent to the base along the axial direction, and the low support portion is detachably rotatably connected to the high support column and / or the low support column adjacent to the base along the axial direction.

[0021] Optionally, the location of either the high support layer or the low support layer is any of the following, and the height of each of the high support surfaces in the same layer is the same, and the height of each of the low support surfaces in the same layer is the same:

[0022] Located between two adjacent high support layers;

[0023] Located between two adjacent low support layers;

[0024] It is located between the adjacent high support layer and the low support layer.

[0025] Optionally, each of the high support portions may be detachably connected to another high pillar and another high support portion in sequence, or may be detachably connected to another low pillar and another low support portion in sequence.

[0026] Optionally, each of the lower support portions may be detachably connected to another higher support and another higher support portion in sequence, or each may be detachably connected to another lower support and another lower support portion in sequence.

[0027] Optionally, the top of either the high support portion or the low support portion includes a distal axial surface, a support surface with a height lower than the distal axial surface, and a limiting surface located between the distal axial surface and the support surface and connecting the distal axial surface and the support surface respectively to form a stepped structure, wherein the distal axial surface is farther away from the guide portion than the support surface.

[0028] Optionally, the support device for semiconductor workpiece processing further includes a hollow support plate disposed on at least one of the high support layers or at least one of the low support layers, wherein the high support column of the same high support layer or the low support column of the same low support layer penetrates the edge of the hollow support plate, or the edge of the hollow support plate is supported by each high support surface of the same high support layer or by each low support surface of the same low support layer.

[0029] Optionally, the guide portion extends through at least one of the hollowed-out support plates.

[0030] Optionally, the support device for semiconductor workpiece processing further includes a shielding plate disposed on at least one of the high support layers or at least one of the low support layers, wherein at least a portion of the high support pillars of the same high support layer or at least a portion of the low support pillars of the same low support layer penetrates the edge of the shielding plate, or the edge of the shielding plate is supported by at least a portion of the high support surface of the same high support layer or by at least a portion of the low support surface of the same low support layer.

[0031] Optionally, the shielding plate has a central protrusion and its outer diameter increases from top to bottom.

[0032] Optionally, the guide portion extends through at least one of the shielding plates.

[0033] Optionally, the base has a recessed structure at the top, and a frame is suspended in the recessed structure, with the guide extending from the middle of the frame.

[0034] Optionally, at least one grid support structure is provided between the frame and the inner wall of the recessed structure.

[0035] Optionally, the base sidewall has at least one sidewall hollow structure communicating with the recessed structure. Attached Figure Description

[0036] Figure 1 This is a schematic diagram of the structure of the carrier device for semiconductor workpiece processing provided by the present invention;

[0037] Figure 2 This invention provides a schematic diagram of the structure of a high support portion;

[0038] Figure 3 This invention provides a schematic diagram of a tall support structure;

[0039] Figure 4 This is an assembly diagram of several high-carrier supports for the object to be processed provided by the present invention, wherein only part of the structure of the object to be processed and part of the high carrier is shown.

[0040] Figure 5This invention provides a schematic diagram illustrating the relative positional relationship between several high-vehicle and low-vehicle vehicles, which is equivalent to... Figure 1 The plane containing each high vehicle and each low vehicle is abstracted as a dotted line in the diagram to show the height relationship between each high vehicle and each low vehicle on the dotted line.

[0041] Figure 6 This invention provides a schematic diagram illustrating another relative positional relationship between several high-vehicle and low-vehicle vehicles, which is equivalent to... Figure 1 The plane containing each high vehicle and each low vehicle is abstracted as a dotted line in the diagram to show the height relationship between each high vehicle and each low vehicle on the dotted line.

[0042] Figure 7 This is a schematic diagram of the working state of the carrier device for semiconductor workpiece processing provided by the present invention;

[0043] Figure 8 This invention provides a schematic diagram of the assembly structure of the base and the guide portion;

[0044] Figure 9 This invention provides another schematic diagram of the assembly structure of the base and guide portion;

[0045] Figure 10 This invention provides a schematic diagram of an assembly structure between two carriers and a hollow support plate;

[0046] Figure 11 This invention provides a schematic diagram of another assembly structure between two carriers and a hollow support plate;

[0047] Figure 12 This invention provides a schematic diagram of a first type of hollow support plate structure;

[0048] Figure 13 A schematic diagram of a second type of hollow support plate structure is provided for this invention;

[0049] Figure 14 This invention provides a schematic diagram of an assembly structure between two carriers, a shielding plate, and a guide section;

[0050] Figure 15 This invention provides a schematic diagram of another assembly structure between two carriers, a shielding plate, and a guide section. Detailed Implementation

[0051] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0052] This invention provides a carrier device for semiconductor workpiece processing, such as... Figure 1 The diagram shows a base 1, a guide section 4, several high carriers 2, and several low carriers 20. The guide section 4 is located on the top surface of the base 1 and extends along the axial direction of the base 1 (i.e., from bottom to top). Several high carriers 2 are located on the top surface of the base 1 and are arranged at intervals around the guide section 4, with spacing between adjacent high carriers 2 to facilitate the flow of gaseous processing media. Several low carriers 20 are located on the top surface of the base 1 and are arranged at intervals around the guide section 4. One low carrier 20 is located between adjacent high carriers 2.

[0053] In this embodiment, the arrangement of the high-mounted vehicles 2 and the low-mounted vehicles 20 can be flexibly adjusted according to support requirements. For example, at least one low-mounted vehicle 20 may be provided between adjacent high-mounted vehicles 2. Alternatively, some adjacent high-mounted vehicles 2 may not have a low-mounted vehicle 20 between them.

[0054] In some embodiments, reference is made to Figure 1 and 5 Taking a support layer composed of low carriers 20 and high carriers 2 arranged on the top surface of the base 1 as an example: the top surface of the low carriers 20 includes low support surfaces 221, all of which are of the same height and are arranged at intervals around the guide portion 4; the top surface of the high carriers 2 includes high support surfaces 222, all of which are of the same height and are arranged at intervals around the guide portion 4. The height of the high support surfaces 222 is greater than the height of the low support surfaces 221. This structural design makes full use of the space on the top surface of the base 1 to form carrier layers of different heights, achieving double-layer support to increase the load-bearing capacity, and improving the treatment quality and efficiency of the surface to be treated while providing stable support.

[0055] In some embodiments, reference is made to Figure 1 and Figure 2The high support 2 includes a plurality of high support portions 22 spaced apart around the guide portion 4, and high pillars 23 detachably connected to the bottom of each high support portion 22 to form a high support layer. Each high pillar 23 is disposed on the top surface of the base 1 and spaced apart around the guide portion 4, and the top surface of each high support portion 22 includes a high support surface 222. The high pillar 23 is farther away from the guide portion 4 relative to the corresponding high support surface 222.

[0056] In some embodiments, reference is made to Figure 1 The low support 20 includes a plurality of low support portions 220 spaced apart around the guide portion 4, and low support columns 230 detachably connected to the bottom of each low support portion 220 to form a low support layer. Each low support column 230 is disposed on the top surface of the base 1 and spaced apart around the guide portion 4. The top surface of each low support portion 220 includes a low support surface (not shown in the figure) that is lower than the high support surface 222. The low support columns 230 are farther away from the guide portion 4 relative to the corresponding low support surface (not shown in the figure).

[0057] The high support column 23 is farther away from the guide part 4 than the corresponding high support surface 222, and the low support column 230 is farther away from the guide part 4 than the corresponding low support surface (not shown in the figure). This makes it so that after the object to be processed 3 is supported by the support surfaces of the same layer, the support columns set above these support surfaces of the same layer will surround the object to be processed 3, thereby further limiting the object to be processed 3.

[0058] It is worth noting that: starting from the base 1, the height of the first high support layer is higher than the height of the first low support layer to achieve double support. The radial dimensions of the objects to be processed supported by each layer can be the same or different. Specifically, it can be adjusted by the length of the high support part 22 and the low support part 220 extending toward the central axis of the base 1.

[0059] In some embodiments, the top of either the high support portion 22 or the low support portion 220 includes a distal surface, a support surface, and a limiting surface. (See also...) Figures 1 to 3 Taking the high support portion 22 as an example, the top of the high support portion 22 includes a distal axis surface 221, a support surface 222 with a height lower than the distal axis surface 221, and a limiting surface 223 located between the distal axis surface 221 and the support surface 222 and connecting the distal axis surface 221 and the support surface 222 respectively, to form a high support portion 221. Figure 2 The stepped structure is shown. The area enclosed by the side wall 224 of each high support 22 along the radial direction of the base 1 toward the guide 4 is a hollow area. The height of each support surface 222 is the same and surrounds the guide 4. The top structure of the low support 220 is described above and will not be repeated here.

[0060] The above structure is suitable for supporting substrates with through-hole structures. For example, in some deposition process applications, a through-hole is opened in the center of the graphite disk for rotatable connection to a rotating device to drive the substrate it supports to rotate. When this graphite disk with through-holes is used as substrate 3 and requires heat treatment with a gas processing medium to remove surface deposits, refer to... Figure 1 , Figure 2 and Figure 4 The through hole 31 of the object to be processed 3 is aligned with the guide part 4, and the object to be processed 3 is placed downward along the axial direction of the guide part 4. The bottom surface of the edge of the object to be processed 3 is supported by the support surface 222 of each high support part 22. The limiting surface 223 effectively restricts the horizontal movement of the object to be processed 3 to prevent it from falling off the high support part 22, thus improving the bearing stability. The same height of each support surface 222 ensures horizontal support stability. Compared with not setting the guide part 4, the guide part 4 penetrates the through hole 31 of the object to be processed 3, which further restricts the radial movement of the object to be processed 3, so that the object to be processed 3 can be stably supported by each support surface 222.

[0061] Taking the high carrier 2 as an example: each high support column 23 is located on the top surface of the base 1 and is arranged at intervals around the guide part 4. Each high support part 22, which is detachably connected to the top of the corresponding high support column 23, contacts the bottom surface of the part of the edge of the object to be processed. This design simplifies the overall structure of the carrier device for semiconductor workpiece processing and reduces the overall weight of the carrier device for semiconductor workpiece processing.

[0062] Furthermore, the top surface of the high support portion 22 achieves surface contact support, facilitating the placement and removal of workpieces to be processed, including wafers and heavy graphite disks; unlike the insertion and removal method used in existing technologies (unsuitable for heavy graphite disks). Therefore, this support device for semiconductor workpiece processing has a wider range of applications and greater versatility. In particular, the bottom surface of part of the edge of the workpiece 3 is supported by the support surface 222 of each of the high support portions 22, allowing the top surface and most of the bottom surface of the workpiece 3 to be fully exposed. By controlling the radial length of the support surface 222, a gap can be maintained between the sidewall of the workpiece 3 and the limiting surface 223 while ensuring support stability. This also allows the sidewall of the workpiece 3 to be fully exposed, which is beneficial for the gas processing medium to perform maximum cleaning treatment on the surface of the workpiece 3.

[0063] Reference Figure 2 , Figure 3 and Figure 5The high support portion 22 and the adjacent high support column 23 are detachably connected via corresponding far-axis surfaces 221. The high support column 23 has positioning bosses (not shown in the figure) at both its upper and lower ends, and the high support portion 22 has positioning holes. The positioning bosses (not shown in the figure) are fitted into the positioning holes, enabling the detachable connection between the high support portion 22 and the high support column 23. The correspondence between the low support portion 220 and the low support column 230 is similar and will not be elaborated upon here.

[0064] In some embodiments, the high support 23 and the high support 22 are detachably connected by a threaded connection.

[0065] In some embodiments, the high support 230 and the high support 220 are detachably connected by a threaded connection.

[0066] In some embodiments, a plurality of high carriers 2 on the same floor form a high support layer, and the number of high support layers is at least two. A plurality of low carriers 20 on the same floor form a low support layer, and the number of low support layers is at least two. Taking a high support layer as an example, refer to... Figure 1 , Figure 5 and Figure 6 The high support columns 23 set on the top surface of the base 1 constitute the first high support column layer. The high support parts 22 connected to each high support column 23 of the first high support column layer form the first high support layer. The first high support column layer and the first high support layer together form a high support layer. The high support layers are sequentially and detachably connected along the axial direction of the base 1 to achieve simultaneous processing of multiple objects 3 to be processed, thereby improving processing efficiency.

[0067] In some embodiments, the guide portion 4 penetrates at least one high support layer and / or at least one low support layer from bottom to top. Taking the high support layer as an example, such as... Figure 7 As shown, the high support section 22 supports the material to be processed 3 with through holes. The space between adjacent materials to be processed 3 is interconnected to facilitate the full flow of gaseous processing media, thereby improving the processing quality. The layered support from bottom to top makes full use of space, reduces the floor area, and the detachable layer design makes it easy to pick up and put down the materials to be processed layer by layer.

[0068] In some embodiments, the guide portion 4 penetrates part of the support layer from bottom to top, allowing the upper support portion to be used to carry the workpiece 3 without through-holes, while the lower support portion can be used to carry the workpiece 3 with through-holes, further improving loading utilization. Specifically, when different types of workpieces are used, but the processing technology, such as the process of removing impurities by heat treatment using the same gas medium, is the same, the carrier device for semiconductor workpiece processing in this embodiment can simultaneously process different types of workpieces, such as simultaneously processing wafers and graphite disks. In this application scenario, the guide portion 4 penetrates part of the support layer from bottom to top. At least one support layer at the top is not penetrated by the guide portion 4, allowing the loading of wafers with high cleanliness requirements; at least one support layer in the middle is not penetrated by the guide portion 4, allowing the loading of graphite disks without through-holes; and at least one support layer at the bottom is penetrated by the guide portion 4, allowing the loading of graphite disks with through-holes.

[0069] In some embodiments, when the number of the high support layer and the low support layer is at least 2, refer to Figure 1 , Figure 5 and Figure 6 The high support portion 22 is detachably and rotatably connected to the high support column 23 and / or the low support column 230 adjacent to the base 1 along the axial direction, and the low support portion 220 is detachably and rotatably connected to the high support column 23 and / or the low support column 230 adjacent to the base 2 along the axial direction. For example, taking the support of several high support portions 22 on the same layer as an example, after the processing is completed, the corresponding items to be processed carried on the several high support portions 22 on the same layer are removed. The high support portions 22 and the high support columns 23 can be removed without dismantling them. Instead, the several high support portions 22 can be rotated to a suitable position to fully expose the items to be processed below, so that the items to be processed below can be removed from the top, which facilitates the handling of the items to be processed.

[0070] In some embodiments, the high support 23 and / or the low support 230 located on the same side are coaxial to facilitate stable support.

[0071] In some embodiments, the high support layer and the low support layer are located in any of the following positions, such that the heights of each of the high support surfaces and / or each of the low support surfaces located in the same layer are the same: located between two adjacent high support layers; located between two adjacent low support layers; located between adjacent high support layers and low support layers.

[0072] In some embodiments, reference is made to Figure 1 , Figure 5 and Figure 6The high support 2 and low support 20 can be flexibly combined and loaded according to usage requirements to achieve layered arrangement. The tops of the high support portions 22 on the same layer are sequentially and detachably connected to another high support column 23 and another high support portion 22, or sequentially and detachably connected to another low support column 230 and another low support portion 220. The tops of the low support portions 220 on the same layer are sequentially and detachably connected to another high support column 23 and another high support portion 22, or sequentially and detachably connected to another low support column 230 and another low support portion 220. It is worth noting that after the above sequential detachable connection along the axis of the base 1, it can be arranged as follows: Figure 5 As shown, the high-level load cells 2 and low-level load cells 20 on the same floor have the same height, but the heights of the high-level load cells 2 and low-level load cells 20 on the same floor differ. This staggered arrangement of high and low load cells can significantly expand the load-bearing capacity. Alternatively, as shown... Figure 6 The high load 2 and low load 20 on the same floor are of the same height. In a certain floor, the high load 2 and low load 20 may be of the same height (in which case the height of each high support surface and each low support surface is the same). This situation can provide a stronger load-bearing capacity to support heavier loads.

[0073] In some embodiments, reference is made to Figure 8 The base 1 has a recessed structure 11 at its top, and the guide part 4 is located within the recessed structure 11. Further reference... Figure 9 A frame 111 is suspended within the recessed structure 11, and a guide portion 4 extends from the middle of the frame 111. Specifically, as shown... Figure 9 As shown, the frame 111 is composed of multiple supports 161 intersecting each other. The supports 161 intersect at the middle of the recessed structure 11, and the guide part 4 is located at the intersection of the supports 161 to jointly support the guide part 4.

[0074] Furthermore, the area within the recessed structure 11 formed by the frame 111 can be used to hold small-sized items to be processed, such as small-sized graphite disks, effectively utilizing the space within the base 1 and improving loading utilization.

[0075] Furthermore, when the types of materials to be processed are different, but the processing technology, such as the process of heating through the same gas medium, is the same, for example, wafers and graphite disks can be processed simultaneously. In this application scenario, the recessed structure 11 in the base 1, and each of the support layers arranged in at least one sequential layer closest to the recessed structure 11, can be used to support the graphite disk, while the other support layers above it are used to support the wafer; or the recessed structure 11 supports the graphite disk, and each support layer supports the wafer.

[0076] In some embodiments, the object to be processed with a through-hole structure, such as a graphite disk with a hole in the middle, can be placed on the frame 111 via the guide part 4. The frame 111 supports the bottom surface of the object to be processed as a surface support with a small contact area, so that the exposed top surface, side walls and most of the bottom surface of the object to be processed can be effectively cleaned.

[0077] In some embodiments, reference is made to Figure 8 and Figure 9 At least one grid support structure 151 is provided between the frame 111 and the inner wall of the recessed structure 11. Each grid support structure 151 surrounds the guide post 4. Specifically, each support 161 of the frame 111 converges at the middle of the base 1 and extends in different directions to connect with the inner sidewall of the base 1. Each grid support structure 151 is located between an adjacent support 161 and the inner wall portion of the base 1 located between the two ends of the adjacent support 161, and the adjacent support 161 and the inner wall portion of the base 1 located between the two ends of the adjacent support 161 constitute the bottom solid area. A second object to be processed, such as a small graphite disk, can be placed on the top surface of each grid support structure 151.

[0078] In some embodiments, the edge of the grid support structure 151 is connected to the middle of the side wall of the corresponding bracket 161 and the middle of the inner side wall of the corresponding base 1 to achieve suspension, so that the height of the grid support structure 151 is less than the height of the frame 111, thereby enabling gas flow space between the top and bottom of the grid support structure 151, which is conducive to the flow of processing gas and maximizes contact with and action on the bottom surface of the corresponding placed object to be processed, thereby improving the processing quality and processing efficiency.

[0079] In some embodiments, reference is made to Figure 8 and Figure 9 The base 1 has at least one side wall hollow structure 12 that communicates with the recessed structure 11, which can further enhance the flow capacity of the processing medium, promote full contact between the processing medium and the surface of the object to be processed, and improve the processing quality and efficiency.

[0080] In one embodiment, the support device for semiconductor workpiece processing further includes a perforated support plate disposed on at least one of the high support layers and / or at least one low support layer to support a small-sized workpiece 3.

[0081] In some embodiments, a high column in the same high support layer or a low column in the same low support layer penetrates the edge of a perforated support plate. (See reference...) Figure 10Taking two radially opposite high supports 2 on the same layer as an example, supporting a hollow support plate 5, since the high support portion 22 and the high support column 23 are detachably connected, when assembling the hollow support plate 5, the high support portion 22 is removed, and the hollow support plate 5 is fitted over each high support column 23 so that the high support column 23 passes through the edge of the hollow support plate 5. In some specific embodiments, after the hollow support plate 5 is fitted over each high support column 23, it can remain stationary relative to each high support column 23 and be in a horizontal support state, and it is located between adjacent high support portions 22 along the axial direction of the high support column 23. The hollow support plate 5 can be used to support at least one object to be processed, effectively increasing the space available for support. Especially in some cases, if the size of the object to be processed 3 cannot meet the requirements for placement in the recessed structure 11, nor can it be supported by each high support portion 22 on the same layer, it can be supported by the hollow support plate 5.

[0082] In some embodiments, the edges of the perforated support plate 5 are supported by the high support surfaces 222 of the same high support layer, or by the low support surfaces of the same low support layer. (Refer to...) Figure 11 Taking two high supports 2 on the same layer and radially opposite each other as an example, the hollow support plate 5 is supported by two high supports 2 on the same layer. The edge of the hollow support plate 5 contacts the support surface 222 of each high support part 22 on the same layer.

[0083] In some embodiments, the guide portion 4 passes through at least one hollow support plate 5, for example, through the hollow support plate 5 located near the base 1.

[0084] In some specific embodiments, the structure of the hollow support plate 5 can be as follows: Figures 12 to 13 As shown. (Refer to...) Figure 12 and Figure 13 The perforated support plate 5 has several support holes 51 on its edges and four top perforated areas 121 in its center, each surrounded by a top solid area 122. During assembly, the perforated support plate 5 is fitted onto the corresponding high support column 23 through the support holes 51, thus positioning itself between adjacent high support portions 22 along the axial direction of the base 1. Each top perforated area 121 can support small-sized objects 3, such as small graphite disks. The perforated support plate 5 may also have a support plate through hole 52 in its center, through which a guide portion 4 passes. Specifically, the support plate through hole 52 is located in the center of the top solid area 122.

[0085] In some embodiments, the number of top cutout areas 121 is at least one. The specific number and distribution can be flexibly adjusted according to usage requirements.

[0086] During heat treatment, impurities peel off from the surface of the workpiece from the upper layer and fall onto the surface of the workpiece from the lower layer. Impurities falling from the top of the processing chamber also land on the workpiece. When the workpiece requires a high degree of cleanliness, such as a wafer, this can cause secondary contamination. In one embodiment, when the number of support layers is at least two, the carrier device for semiconductor workpiece processing further includes a shielding plate disposed on at least one of the support layers. The shielding plate blocks impurities falling from the upper layer or from the top of the processing chamber.

[0087] In some embodiments, the shielding plate is a flat plate, with a tall support column in the same high support layer penetrating through the edge of the shielding plate, or a low support column in the same low support layer penetrating through the edge of the shielding plate. For specific implementation details, please refer to the foregoing description. Figure 10 The difference in the discussion is that the hollow support plate 5 is replaced with a shielding plate.

[0088] In some embodiments, the shielding plate is a flat plate, and the edges of the shielding plate are supported by the high support surfaces of the same high support layer, or by the low support surfaces of the same low support layer. For specific implementation details, please refer to the aforementioned description. Figure 11 The difference in the discussion is that the hollow support plate 5 is replaced with a shielding plate.

[0089] In some embodiments, the shielding plate has a central bulge, and at least part of its outer wall is inclined to the respective support surfaces of the same support layer. Specifically, the shielding plate has a central bulge and its outer diameter increases from top to bottom.

[0090] In some embodiments, reference is made to Figure 14 Taking two radially opposite high supports 2 on the same layer as an example, supporting a shielding plate 21, since the high support portion 22 and the high support column 23 are detachably connected, when assembling the shielding plate 21, the high support portion 22 is removed, and the shielding plate 21 is fitted over each high support column 23 so that the high support column 23 passes through the edge of the shielding plate 21. In some specific embodiments, after the shielding plate 21 is fitted over each high support column 23, it can remain stationary relative to each high support column 23 and is located between adjacent high support portions 22 along the axial direction of the high support column 23.

[0091] In some embodiments, reference is made to Figure 15 Taking two high supports 2 on the same floor and radially opposite each other as an example, the shielding plate 21 is supported by two high supports 2 on the same floor. The edge of the shielding plate 21 contacts the support surface 222 of each high support part 22 on the same floor.

[0092] In some embodiments, the guide portion 4 passes through at least one shielding plate 21, for example, through a shielding plate 21 disposed near the base 1.

[0093] In some embodiments, the shielding plate 21 may specifically be a cone, frustum, pyramid, or frustum pyramid structure.

[0094] In one embodiment, at least one group of adjacent high pillars 23 are connected by a reinforcing structure within the same support layer to enhance support capacity and stability. For example, the reinforcing structure may be an arc-shaped plate with its two ends fixedly connected to the sidewalls of adjacent high pillars 23.

[0095] Meanwhile, this embodiment of the invention also provides a semiconductor workpiece processing apparatus, including a processing chamber, in which the aforementioned carrier device for semiconductor workpiece processing is housed, such that the carrier device for semiconductor workpiece processing extends axially along the processing chamber. Based on this design of the carrier device for semiconductor workpiece processing, this semiconductor workpiece processing apparatus, while meeting the requirements for carrying the workpiece to be processed, fully utilizes the space in the height direction of the processing chamber, improving space utilization, and facilitating the flow of the processing medium from each surface of the workpiece to be processed, thus improving the processing quality of the workpiece to be processed; furthermore, based on the design of the guide portion 4, it is convenient to place the workpiece to be processed with a through hole into a predetermined position on the base 1, and it can effectively prevent the workpiece to be processed from falling off the base 1 after being placed in position.

[0096] In one embodiment, the semiconductor workpiece processing equipment is a baking equipment. A wafer or graphite disk is placed on a carrier device for semiconductor workpiece processing, and then the carrier device for semiconductor workpiece processing is placed in a processing chamber. A gas processing medium flows through the processing chamber and flows to the surface of the wafer or graphite disk on the carrier device for semiconductor workpiece processing. Combined with the baking effect, the surface of the wafer or graphite disk is processed.

[0097] In one embodiment, the carrier device for processing semiconductor workpieces further includes a safety device detachably mounted on top of the base 1 and surrounding a plurality of high carriers 2 and a plurality of low carriers 20. This safety device essentially acts as a cover over the top of the base 1, enclosing all the high carriers 2 and low carriers 20 and the workpieces they carry, thus limiting the movement of all the high carriers 2 and low carriers 20 and the workpieces. During transport after loading, if the workpiece slips out of the carrier area, this safety device can prevent it from doing so. Furthermore, its detachable design allows for easy removal of the safety device after transport to its destination.

[0098] In one embodiment, the safety device adopts a limiting cylinder, and the base 1 is provided with a limiting groove. During transportation, the lower end of the limiting cylinder is embedded in the limiting groove.

[0099] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A support device for processing semiconductor workpieces, characterized in that, include: Base; A guide portion is provided on the top surface of the base and extends along the axial direction of the base so that it can pass through the through hole when the middle part of the object to be processed contains a through hole; A plurality of high carriers are disposed on the top surface of the base and arranged at intervals around the guide portion. The top surface of the high carrier includes a high support surface. The high support surfaces are all of the same height and are arranged at intervals around the guide portion to support a portion of the bottom surface of the edge of an object to be processed through surface contact. The high carrier includes a plurality of high support portions arranged at intervals around the guide portion, and high pillars detachably connected to the bottom of each high support portion to form a high support layer. A plurality of low carriers are disposed on the top surface of the base and arranged at intervals around the guide portion, with at least one low carrier located between adjacent high carriers. The top surface of each low carrier includes a low support surface, and the low support surfaces are of the same height and arranged at intervals around the guide portion to support a portion of the bottom surface of another object to be processed through surface contact. Each low carrier includes a plurality of low support portions arranged at intervals around the guide portion, and low pillars detachably connected to the bottom of each low support portion to form a low support layer. The higher support surface is greater than the lower support surface, so that the other object to be processed is located below the first object to be processed. The number of high support layers and the number of low support layers are both at least 2. The guide portion passes through at least one high support layer and / or at least one low support layer from bottom to top. The high support portion is detachably rotatably connected to the high support column and / or the low support column adjacent to the base axis.

2. The carrier device for semiconductor workpiece processing according to claim 1, characterized in that, Each of the high support columns is disposed on the top surface of the base and arranged at intervals around the guide portion. The top surface of each of the high support portions includes the high support surface. The high support column is farther away from the guide portion than the high support surface of the corresponding detachably connected high support portion.

3. The carrier device for semiconductor workpiece processing according to claim 2, characterized in that, Each of the aforementioned low support pillars is disposed on the top surface of the base and arranged at intervals around the guide portion. The top surface of each of the aforementioned low support portions includes the low support surface. The low support pillars are farther away from the guide portion than the low support surface of the corresponding detachably connected low support portion.

4. The carrier device for semiconductor workpiece processing according to claim 3, characterized in that, At least one of the lower supports is located between adjacent higher supports, and the height of each higher support is greater than the height of each lower support.

5. The carrier device for semiconductor workpiece processing according to claim 1, characterized in that, At least some of the high pillars and / or at least some of the low pillars located on the same side are coaxial.

6. The carrier device for semiconductor workpiece processing according to claim 1, characterized in that, The location of either the high support layer or the low support layer is any of the following, and the height of each of the high support surfaces in the same layer is the same, and the height of each of the low support surfaces in the same layer is the same: Located between two adjacent high support layers; Located between two adjacent low support layers; It is located between the adjacent high support layer and the low support layer.

7. The carrier device for semiconductor workpiece processing according to claim 6, characterized in that, Each of the high support sections is sequentially and detachably connected to another high pillar and another high support section, or sequentially and detachably connected to another low pillar and another low support section.

8. The carrier device for semiconductor workpiece processing according to claim 6, characterized in that, Each of the aforementioned low support portions is sequentially and detachably connected to another high support column and another high support portion at its top, or sequentially and detachably connected to another low support column and another low support portion.

9. The carrier device for semiconductor workpiece processing according to claim 3, characterized in that, The top of either the high support portion or the low support portion includes a distal axial surface, a support surface with a height lower than the distal axial surface, and a limiting surface located between the distal axial surface and the support surface and connecting the distal axial surface and the support surface respectively to form a stepped structure, wherein the distal axial surface is farther away from the guide portion than the support surface.

10. The carrier device for semiconductor workpiece processing according to claim 3, characterized in that, It also includes a perforated support plate disposed in at least one of the high support layers or at least one of the low support layers, wherein the high support column of the same high support layer or the low support column of the same low support layer penetrates the edge of the perforated support plate, or the edge of the perforated support plate is supported by each high support surface of the same high support layer or by each low support surface of the same low support layer.

11. The carrier device for semiconductor workpiece processing according to claim 10, characterized in that, The guide portion penetrates at least one of the hollowed-out support plates.

12. The carrier device for semiconductor workpiece processing according to claim 3, characterized in that, It also includes a shielding plate disposed on at least one of the high support layers or at least one of the low support layers, wherein at least a portion of the high support pillars of the same high support layer or at least a portion of the low support pillars of the same low support layer penetrates the edge of a shielding plate, or the edge of the shielding plate is supported by at least a portion of the high support surface of the same high support layer or by at least a portion of the low support surface of the same low support layer.

13. The carrier device for semiconductor workpiece processing according to claim 12, characterized in that, The shielding plate has a raised center and its outer diameter increases from top to bottom.

14. The carrier device for semiconductor workpiece processing according to claim 12, characterized in that, The guide portion penetrates at least one of the shielding plates.

15. The carrier device for semiconductor workpiece processing according to claim 1, characterized in that, The base has a recessed structure at the top, and a frame is suspended in the recessed structure. The guide extends from the middle of the frame.

16. The carrier device for semiconductor workpiece processing according to claim 15, characterized in that, At least one grid support structure is provided between the frame and the inner wall of the recessed structure.

17. The carrier device for semiconductor workpiece processing according to claim 15, characterized in that, The base has at least one sidewall hollow structure that communicates with the recessed structure.

18. A semiconductor workpiece processing device, characterized in that, The device includes a processing chamber, wherein the processing chamber houses the carrier device for processing semiconductor workpieces as described in claim 1, such that the carrier device for processing semiconductor workpieces extends axially along the processing chamber.

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