Display panel and manufacturing method thereof

Abstract

This invention discloses a display panel and its fabrication method. The display panel includes an array substrate, a pixel definition layer, an auxiliary electrode layer, a light-emitting layer, and a cathode layer. The auxiliary electrode layer includes multiple auxiliary electrode portions, each including a first top surface away from the array substrate and a first sidewall connecting the first top surface. The light-emitting layer covers the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portions, exposing the first sidewall of the auxiliary electrode portions. The cathode layer covers the side of the light-emitting layer away from the array substrate and also covers the first sidewall. In this invention, the light-emitting layer is formed using a spin-coating process, eliminating the need for an undercut structure in the auxiliary electrode layer. This reduces process complexity, saves on manufacturing steps, and lowers costs while ensuring reduced resistance in the cathode layer.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display panel and its manufacturing method. Background Technology

[0002] Organic light-emitting displays (OLEDs) are characterized by low cost, all-solid-state operation, active light emission, high brightness, high contrast, wide viewing angle, fast response speed, thinness, low-voltage DC drive, low power consumption, wide operating temperature range, and the ability to achieve soft-screen display, making them an ideal flat panel display.

[0003] In related technologies, OLED organic layers are typically deposited across the entire surface using a vapor deposition process. This requires fabricating a complex undercut structure on the array substrate to isolate the OLED organic layer at the opening of the undercut structure. This allows for direct contact between the cathode and auxiliary cathode without the presence of an OLED organic layer, reducing the resistance between them and thus lowering the overall IRDrop (internal voltage drop) effect of the display panel. However, the fabrication process for the undercut structure is complex, requiring numerous steps and incurring high investment and maintenance costs for vapor deposition equipment, resulting in high overall costs that urgently need improvement. Summary of the Invention

[0004] This invention provides a display panel and its manufacturing method, which can solve the technical problem that the existing display panel manufacturing methods are complex and therefore costly.

[0005] This invention provides a display panel, comprising:

[0006] Array substrate;

[0007] A pixel definition layer is disposed on one side of the array substrate, including multiple dam portions and pixel openings located between two adjacent dam portions;

[0008] An auxiliary electrode layer is disposed on the side of the pixel definition layer away from the array substrate, and includes a plurality of auxiliary electrode portions disposed in a one-to-one correspondence with the plurality of dam portions. Each auxiliary electrode portion includes a first top surface on the side away from the array substrate and a first sidewall connected to the first top surface.

[0009] A light-emitting layer covers the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portion, the light-emitting layer exposing the first sidewall of the auxiliary electrode portion; and

[0010] A cathode layer covers the side of the light-emitting layer away from the array substrate and covers the first sidewall.

[0011] According to an embodiment of the present invention, the dam portion includes a second top surface on the side away from the array substrate and a second sidewall connected to the second top surface; wherein the first sidewall of the auxiliary electrode portion and the second sidewall of the dam portion are connected at the second top surface.

[0012] According to the display panel provided in the embodiment of the present invention, the included angle between the first sidewall and the first top surface is less than or equal to the included angle between the second sidewall and the second top surface.

[0013] According to the display panel provided in the embodiment of the present invention, the included angle between the first sidewall and the first top surface is greater than or equal to 90 degrees and less than 180 degrees.

[0014] According to the display panel provided in the embodiment of the present invention, the light-emitting layer includes a plurality of light-emitting portions arranged in a matrix and emitting light of different colors, each light-emitting portion including a first sub-light-emitting portion and a second sub-light-emitting portion; the first sub-light-emitting portion is located inside the pixel opening, and the second sub-light-emitting portion is located on the first top surface of the auxiliary electrode portion;

[0015] There is a gap between the two second sub-light-emitting parts located on the same auxiliary electrode part in two adjacent light-emitting parts.

[0016] According to the display panel provided in the embodiment of the present invention, the cathode layer includes a plurality of cathode portions corresponding to the light-emitting portion, and the cathode portions cover the first sidewall of the first sub-light-emitting portion, the second sub-light-emitting portion and the auxiliary electrode portion;

[0017] In the thickness direction of the display panel, the outer edge of the cathode portion away from the pixel opening is flush with the outer edge of the second sub-light-emitting portion away from the pixel opening.

[0018] According to the display panel provided in the embodiment of the present invention, the display panel further includes a first encapsulation layer covering the side of the cathode layer away from the array substrate, the first encapsulation layer including a plurality of encapsulation portions disposed corresponding to the light-emitting portion, the encapsulation portions covering the cathode portion;

[0019] In the thickness direction of the display panel, the outer edge of the encapsulation portion away from the pixel opening is flush with the outer edge of the cathode portion away from the pixel opening.

[0020] According to an embodiment of the present invention, the display panel further includes a second encapsulation layer, the second encapsulation layer covering the side of the first encapsulation layer away from the array substrate and filling the gap.

[0021] This invention provides a method for manufacturing a display panel, comprising the following steps:

[0022] S1 provides an array substrate;

[0023] S2, a pixel definition layer is formed on one side of the array substrate, the pixel definition layer including a plurality of dam portions and a pixel opening located between two adjacent dam portions;

[0024] S3, an auxiliary electrode layer is formed on the side of the pixel definition layer away from the array substrate. The auxiliary electrode layer includes a plurality of auxiliary electrode portions that are disposed one-to-one with the plurality of dam portions. The auxiliary electrode portion includes a first top surface on the side away from the array substrate and a first sidewall connected to the first top surface.

[0025] S4, a spin-coating process is used to form a first light-emitting material layer covering the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portion, wherein the first light-emitting material layer exposes the first sidewall of the auxiliary electrode portion; and

[0026] S5, forming a cathode material layer covering the side of the first light-emitting material layer away from the array substrate and the side of the first sidewall of the exposed auxiliary electrode portion near the pixel opening;

[0027] S6, forming an encapsulation material layer covering the cathode material layer;

[0028] S7, a photolithography process is used to pattern the encapsulation material layer, the cathode material layer and the first light-emitting material layer, removing portions of the encapsulation material layer, the cathode material layer and the first light-emitting material layer that do not correspond to the first light-emitting part to be formed, so as to form the first light-emitting part and the first cathode part and the first encapsulation part corresponding to the first light-emitting part.

[0029] According to the method for manufacturing a display panel provided in an embodiment of the present invention, after step S7, the manufacturing method further includes the following steps:

[0030] A second light-emitting material layer is formed by spin coating, covering the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portion. The second light-emitting material layer exposes the first sidewall of the auxiliary electrode portion, and the second light-emitting material layer has a different color from the first light-emitting material layer.

[0031] A cathode material layer is formed covering the side of the second light-emitting material layer away from the array substrate and the side of the second sidewall of the exposed auxiliary electrode portion near the pixel opening;

[0032] Forming an encapsulation material layer covering the cathode material layer; and

[0033] The encapsulation material layer, the cathode material layer, and the second light-emitting material layer are patterned using a single photolithography process. Parts of the encapsulation material layer, the cathode material layer, and the second light-emitting material layer that do not correspond to the second light-emitting part to be formed are removed to form the second light-emitting part, as well as the second cathode part and the second encapsulation part corresponding to the second light-emitting part.

[0034] Beneficial Effects: In the display panel and its manufacturing method provided in the embodiments of the present invention, multiple auxiliary electrode portions corresponding to multiple dam portions are provided on the side of the pixel definition layer away from the array substrate. On the one hand, the light-emitting layer in the present invention is formed by spin coating, which reduces the investment cost and maintenance cost of the evaporation equipment compared to the prior art which uses spin coating to replace the evaporation process to form the light-emitting layer. On the other hand, due to the characteristics of the spin coating process, the light-emitting layer in the present invention cannot be formed on the sidewall of the auxiliary electrode portion, so that the first sidewall of the auxiliary electrode portion is exposed and covered by the cathode layer, thereby realizing the electrical connection between the cathode layer and the auxiliary electrode layer, reducing the resistance of the cathode layer, and thus reducing the voltage drop of the cathode layer. This is beneficial to improving the uniformity of display brightness and display effect of the display panel, without the need to form an undercut structure for contacting the first sidewall with the cathode layer. While ensuring the reduction of the cathode layer resistance, it is beneficial to reduce the complexity of the process, save processes, and reduce costs. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a schematic diagram of a first cross-sectional structure of a display panel provided in an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of a second cross-sectional structure of a display panel provided in an embodiment of the present invention;

[0038] Figure 3 This is a schematic diagram of the planar structure of a display panel provided in an embodiment of the present invention;

[0039] Figure 4 This is a schematic diagram showing the positional relationship between the dam section and the auxiliary electrode section in a display panel provided in an embodiment of the present invention;

[0040] Figure 5 This is a schematic diagram of a third cross-sectional structure of a display panel provided in an embodiment of the present invention;

[0041] Figure 6 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention;

[0042] Figures 7A-7L This is a schematic diagram of the process structure of the method for manufacturing a display panel provided in an embodiment of the present invention.

[0043] Explanation of reference numerals in the attached figures:

[0044] 1. Array substrate; 2. Pixel definition layer; 21. Dam section; 211. Second top surface; 212. Second sidewall; 22. Pixel opening; 3. Auxiliary electrode layer; 31. Auxiliary electrode section; 311. First top surface; 312. First sidewall; 4. Light-emitting layer; 4R. First light-emitting section; 4G. Second light-emitting section; 4B. Third light-emitting section; 41. First sub-light-emitting section; 42. Second sub-light-emitting section; 43. First light-emitting material layer; 5. Cathode layer; 51. Cathode material layer; 5R. First cathode section; 5G. Second cathode section; 5B. Third cathode section; 6. First encapsulation layer; 61. Encapsulation material layer; 6R. First encapsulation section; 6G. Second encapsulation section; 6B. Third encapsulation section; 7. Second encapsulation layer; 8. Anode layer; 81. Anode section; 9. Gap; 10. Photomask; 20. Photoresist layer. Detailed Implementation

[0045] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0046] In the description of this invention, it should be understood that the terms "length," "width," "thickness," "upper," "lower," etc., indicating orientation or positional relationships are based on the orientation or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0047] In this invention, unless otherwise expressly specified and limited, the first feature "above" or "below" the second feature may include direct contact between the first and second features, or contact between the first and second features not in direct contact but through another feature between them.

[0048] This invention provides a display panel and a method for manufacturing the same. Detailed descriptions follow. It should be noted that the order of description in the following embodiments is not intended to limit the preferred order of the embodiments.

[0049] Please see Figure 1 This invention provides a display panel, comprising:

[0050] Array substrate 1;

[0051] A pixel definition layer 2 is disposed on one side of the array substrate 1, including a plurality of dam portions 21 and a pixel opening 22 located between two adjacent dam portions 21;

[0052] The auxiliary electrode layer 3 is disposed on the side of the pixel definition layer 2 away from the array substrate 1, and includes a plurality of auxiliary electrode portions 31 that are disposed one-to-one with the plurality of dam portions 21. The auxiliary electrode portion 31 includes a first top surface 311 on the side away from the array substrate 1 and a first sidewall 312 connected to the first top surface 311.

[0053] A light-emitting layer 4 covers the side of the pixel definition layer 2 away from the array substrate 1 and the first top surface 311 of the auxiliary electrode portion 31, and the light-emitting layer 4 exposes the first sidewall 312; and

[0054] The cathode layer 5 covers the side of the light-emitting layer 4 away from the array substrate 1 and covers the first sidewall 312 of the exposed auxiliary electrode portion 31.

[0055] This invention provides a plurality of auxiliary electrode portions 31, each corresponding to a plurality of dam portions 21, on the side of the pixel definition layer 2 away from the array substrate 1. On one hand, the light-emitting layer 4 in this invention is formed using a spin-coating process. Compared to the prior art, which uses spin-coating instead of vapor deposition to form the light-emitting layer 4, this reduces the investment and maintenance costs of vapor deposition equipment. On the other hand, due to the characteristics of the spin-coating process, the light-emitting layer 4 in this invention cannot be formed on the first sidewall 312 of the auxiliary electrode portion 31. This exposes the first sidewall 312 of the auxiliary electrode portion 31, which is then covered by the cathode layer 5. This achieves electrical connection between the cathode layer 5 and the auxiliary electrode portion 31, reducing the resistance of the cathode layer 5 and thus reducing the voltage drop of the cathode layer 5. This improves the uniformity of display brightness and display effect of the display panel, without requiring an undercut structure to contact the sidewall with the cathode layer 5. While ensuring the reduction of the resistance of the cathode layer 5, this reduces process complexity, saves on manufacturing processes, and lowers costs.

[0056] Specifically, the array substrate 1 further includes a substrate and a driving circuit layer and a planarization layer located on the substrate. The driving circuit layer is located on the side of the substrate closer to the pixel definition layer 2. The planarization layer covers the driving circuit layer, and the pixel definition layer 2 is located on the side of the planarization layer away from the array substrate 1. The driving circuit layer includes a thin-film transistor, which may include an active layer, a gate, a source, and a drain.

[0057] Optionally, the substrate can be a rigid substrate or a flexible substrate. A rigid substrate may include a hard substrate such as a glass substrate. A flexible substrate may include a polyimide (PI) film, an ultrathin glass film, or other flexible substrates. Of course, to improve the substrate's resistance to moisture or oxygen penetration, a buffer layer comprising a single layer or multiple layers of silicon oxide or silicon nitride may be provided between the substrate and the driving circuit layer. Since this is prior art, it will not be described in detail here.

[0058] Specifically, the display panel further includes an anode layer 8 disposed on one side of the array substrate 1. The anode layer 8 includes a plurality of spaced anode portions 81. The pixel definition layer 2 covers the edge of the anode portion 81. The pixel opening 22 exposes the middle area of ​​the anode portion 81. The anode portion 81 is electrically connected to the driving circuit layer. Specifically, the anode portion 81 is electrically connected to the drain of the thin-film transistor in the driving circuit layer, so as to realize that the thin-film transistor drives the light-emitting layer 4 to achieve light emission display.

[0059] In this embodiment of the invention, the surface of the first sidewall 312 is flat. It should be noted that "flat surface" does not mean that the surface of the first sidewall 312 is completely smooth, but rather that the first sidewall 312 is not provided with any structure that requires additional photomask preparation, such as protrusions or depressions, for example, the undercut structure used in the prior art to realize the electrical connection between the cathode layer 5 and the auxiliary electrode layer 3.

[0060] Specifically, the cross-sectional shape of the dam section 21 is a regular trapezoid, and similarly, the cross-sectional shape of the auxiliary electrode section 31 is also a regular trapezoid.

[0061] Specifically, the auxiliary electrode part 31 further includes a first bottom surface disposed opposite to the first top surface 311, and the first sidewall 312 is connected between the first top surface 311 and the first bottom surface. The first top surface 311 and the first bottom surface are horizontal surfaces, and the first sidewall 312 is an inclined surface.

[0062] In this embodiment of the invention, the light-emitting layer 4 is prepared by spin coating (or rotational coating). It should be noted that spin coating utilizes a rotating device (such as a rotator) to spread paint droplets onto the workpiece surface using centrifugal force and gravity generated during workpiece rotation. It is only suitable for preparing single-sided coatings on simple planar workpieces, and is not easy to prepare coatings on inclined workpieces. Considering these characteristics of spin coating, this invention replaces the existing vapor deposition process with spin coating to prepare the light-emitting layer 4.

[0063] It is understandable that, since the first top surface 311 and the anode portion 81 are both horizontal surfaces, while the first sidewall 312 is an inclined surface, the luminescent material in the rotator will only fall onto the surface of the anode portion 81 and the surface of the first top surface 311 under the influence of gravity, and will not fall onto the first sidewall 312. Therefore, the luminescent layer 4 is formed only on the anode portion 81 and the first top surface 311, while the luminescent layer 4 is not formed on the first sidewall 312. That is, the first sidewall 312 is exposed without the luminescent layer 4, and the exposed portion is covered by the subsequently formed cathode layer 5, thereby achieving contact between the cathode layer 5 and the first sidewall 312, and further achieving electrical connection between the cathode layer 5 and the auxiliary electrode layer 3. This reduces the resistance of the cathode layer 5 and decreases the voltage drop of the cathode layer 5, which is beneficial for improving the uniformity of the display brightness and the display effect of the display panel.

[0064] Specifically, the material of the auxiliary electrode layer 3 includes conductive materials. Optionally, the material of the auxiliary electrode layer 3 includes transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), ZnO or In2O3, or metals or alloys such as Al, Al alloys (such as ANCL), WOx, Ag, etc. For example, the material of the auxiliary electrode layer 3 is Al.

[0065] The cathode layer 5 can be made of the same material as the auxiliary electrode layer 3. Specifically, the material of the cathode layer 5 includes transparent conductive materials such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In2O3), or metals or alloys such as Mg or Ag.

[0066] In this embodiment of the invention, combined with Figure 1 and Figure 2As shown, the cathode layer 5 includes multiple spaced-apart cathode portions, which may include a first cathode portion 5R, a second cathode portion 5G, and a third cathode portion 5B. The light-emitting layer 4 includes multiple spaced-apart light-emitting portions, with each cathode portion corresponding to one of the light-emitting portions. In a top-view perspective, the cathode portions cover the corresponding light-emitting portions, and the auxiliary electrode portions 31 overlap with the corresponding cathode portions. The auxiliary electrode portions 31 are arranged around the pixel opening 22. Any adjacent auxiliary electrode portions 31 are connected to form a mesh structure, which is electrically connected to the cathode layer 5 to reduce the surface resistivity of the cathode layer 5. The pixel opening 22 is located within a portion of the mesh, thus not affecting the light emission of the light-emitting layer 4 within the pixel opening 22.

[0067] Specifically, such as Figure 1 As shown, the dam portion 21 includes a second top surface 211 on the side away from the array substrate 1 and a second sidewall 212 connecting the second top surface 211. The dam portion 21 also includes a second bottom surface disposed opposite to the second top surface 211, and the second sidewall 212 is connected between the second top surface 211 and the second bottom surface. The second top surface 211 is in contact with the first bottom surface of the auxiliary electrode portion 31.

[0068] It should be noted that there are various possible relative positions between the auxiliary electrode part 31 and the dam part 21, which will be explained in detail below.

[0069] In one implementation, such as Figure 1 As shown, the first sidewall 312 of the auxiliary electrode portion 31 and the second sidewall 212 of the dam portion 21 are not in contact at the second top surface 211, that is, a portion of the second top surface 211 is exposed between the first sidewall 312 and the second sidewall 212. In this case, when the light-emitting layer 4 is formed by spin coating, since the second top surface 211 is a horizontal plane, the light-emitting layer 4 will be formed on the exposed second top surface 211 of the dam portion 21, so that the side of the light-emitting layer 4 on the second top surface 211 away from the pixel opening 22 will contact the first sidewall 312 of the auxiliary electrode portion 31, that is, the first sidewall 312 is not completely covered by the cathode layer 5.

[0070] In another implementation, such as Figure 3 As shown, Figure 3 and Figure 1The difference lies in that the first sidewall 312 of the auxiliary electrode portion 31 and the second sidewall 212 of the dam portion 21 are connected at the second top surface 211, that is, the second top surface 211 is completely covered by the auxiliary electrode portion 31, and there is no exposed second top surface 211 between the first sidewall 312 and the second sidewall 212. In this case, when the light-emitting layer 4 is formed by spin coating, since the first sidewall 312 is an inclined surface, the light-emitting layer 4 will only be formed on the first top surface 311 of the auxiliary electrode portion 31 and inside the pixel opening 22, and will not cover the first sidewall 312, compared to Figure 1 , Figure 3 The area of ​​the first sidewall 312 exposed by the light-emitting layer 4 is increased, and the first sidewall 312 is completely covered by the cathode layer 5, thereby increasing the contact area between the cathode layer 5 and the first sidewall 312. This can further reduce the contact resistance between the cathode layer 5 and the auxiliary electrode layer 3, reduce the voltage drop of the cathode layer 5, and help to further improve the uniformity of the display brightness and the display effect of the display panel.

[0071] In the embodiments of the present invention, please refer to Figure 1 , Figure 3 and Figure 4 The angle between the first sidewall 312 and the first top surface 311 is less than or equal to the angle between the second sidewall 212 and the second top surface 211. For example, in one embodiment, such as... Figure 1 and Figure 3 As shown, the angle between the first sidewall 312 and the first top surface 311 is equal to the angle between the second sidewall 212 and the second top surface 211, that is, the slope of the first sidewall 312 is the same as the slope of the second sidewall 212.

[0072] In another implementation, such as Figure 4 As shown, the angle α1 between the first sidewall 312 and the first top surface 311 is smaller than the angle α2 between the second sidewall 212 and the second top surface 211. That is, the slope of the first sidewall 312 is greater than the slope of the second sidewall 212. Because the slope of the first sidewall 312 is larger, the probability of the light-emitting layer 4 forming on the first sidewall 312 is reduced, thereby further improving the electrical connection between the cathode layer 5 and the auxiliary electrode portion 31. Because the slope of the second sidewall 212 is larger, the opening area of ​​the pixel opening 22 is increased, thereby increasing the area of ​​the light-emitting layer 4 within the pixel opening 22, which is beneficial for improving the light-emitting effect.

[0073] Specifically, the included angle α1 between the first sidewall 312 and the first top surface 311 is greater than or equal to 90 degrees and less than 180 degrees, to avoid the included angle α1 being too small, which would cause the cross-sectional shape of the auxiliary electrode portion 31 to be an inverted trapezoid, thus reducing the risk of the cathode layer 5 breaking during climbing. Optionally, the included angle α1 between the first sidewall 312 and the first top surface 311 is greater than or equal to 90 degrees and less than or equal to 120 degrees. For example, the included angle between the first sidewall 312 and the first top surface 311 can be any one of 90 degrees, 95 degrees, 100 degrees, 105 degrees, 110 degrees, 115 degrees, and 120 degrees.

[0074] Please refer to it again. Figure 1 and Figure 3 The light-emitting layer 4 includes a plurality of light-emitting parts arranged in a matrix and emitting light of different colors. Each light-emitting part includes a first sub-light-emitting part 41 and a second sub-light-emitting part 42. The first sub-light-emitting part 41 is located inside the pixel opening 22, and the second sub-light-emitting part 42 is located on the first top surface 311 of the auxiliary electrode part 31.

[0075] For example, the light-emitting layer 4 includes a first light-emitting part 4R, a second light-emitting part 4G, and a third light-emitting part 4B. The first light-emitting part 4R emits red light, the second light-emitting part 4G emits green light, and the third light-emitting part 4B emits blue light. Of course, the light-emitting layer 4 may also include a white light-emitting part, and the embodiments of the present invention are not limited thereto.

[0076] Specifically, there is a gap 9 between the two second sub-light-emitting parts 42 located on the same auxiliary electrode part 31 in two adjacent light-emitting parts. The reason for this arrangement is to avoid the auxiliary electrode part 31 being covered with only one color of the second sub-light-emitting parts 42, thereby avoiding crosstalk between the light emitted by the two adjacent light-emitting parts and improving the display effect of the display panel.

[0077] Due to manufacturing process reasons, in this embodiment of the invention, the cathode portion covers the first sidewall 312 of the first sub-light-emitting portion 41, the second sub-light-emitting portion 42 and the auxiliary electrode portion 31; wherein, in the thickness direction of the display panel, the outer edge of the cathode portion away from the pixel opening 22 is flush with the outer edge of the second sub-light-emitting portion 42 away from the pixel opening 22.

[0078] Similarly, due to manufacturing process reasons, such as Figure 5 As shown, Figure 5 and Figure 1The difference lies in that the display panel further includes a first encapsulation layer 6 covering the side of the cathode layer 5 away from the array substrate 1, for protecting the light-emitting layer 4 from external water and oxygen corrosion. The first encapsulation layer 6 includes a plurality of encapsulation portions corresponding to the light-emitting portion, the encapsulation portions covering the cathode portion; wherein, in the thickness direction of the display panel, the outer edge of the encapsulation portion away from the pixel opening 22 is flush with the outer edge of the cathode portion away from the pixel opening 22.

[0079] It should be noted that the manufacturing process of the above structure will be described in detail in the following embodiments regarding the manufacturing method of the display panel.

[0080] In this embodiment of the invention, the display panel further includes a second encapsulation layer 7 for protecting the light-emitting layer 4 from external water and oxygen corrosion. The second encapsulation layer 7 covers the side of the first encapsulation layer 6 away from the array substrate 1 and fills the gap 9 to further improve the encapsulation effect on the light-emitting layer 4.

[0081] Specifically, the materials of the first encapsulation layer 6 and the second encapsulation layer 7 include inorganic encapsulation materials. Optionally, the materials of the first encapsulation layer 6 and the second encapsulation layer 7 include one or more combinations of silicon nitride, silicon oxide, and silicon oxynitride.

[0082] Furthermore, the driving circuit layer may also include auxiliary electrode traces (not shown in the figure), which are electrically connected to the auxiliary electrode section 31. The auxiliary electrode section 31 is connected to the cathode driving end through the auxiliary electrode traces, thereby realizing the parallel arrangement of the auxiliary electrode layer 3 and the cathode layer 5, which can reduce the IR drop effect of the display panel and improve the display uniformity of the display panel.

[0083] Please see Figure 6 and Figures 7A-7L This invention also provides a method for manufacturing a display panel, comprising the following steps:

[0084] S1, an array substrate 1 is provided.

[0085] S2: A pixel definition layer 2 is formed on one side of the array substrate 1. The pixel definition layer 2 includes a plurality of dam portions 21 and a pixel opening 22 located between two adjacent dam portions 21.

[0086] S3: An auxiliary electrode layer 3 is formed on the side of the pixel definition layer 2 away from the array substrate 1. The auxiliary electrode layer 3 includes a plurality of auxiliary electrode portions 31 that are disposed one-to-one with the plurality of dam portions 21. The auxiliary electrode portion 31 includes a first top surface 311 on the side away from the array substrate 1 and a first sidewall 312 connected to the first top surface 311.

[0087] Specifically, such as Figure 7A As shown, step S1 includes the following steps: providing a substrate; forming a driving circuit layer on the substrate; and forming a planarization layer covering the driving circuit layer.

[0088] In step S2, a pixel definition material layer is formed on one side of the array substrate 1; the pixel definition material layer is exposed and developed using a photolithography process to pattern the pixel definition material layer to form the dam portion 21 and the pixel opening 22.

[0089] In step S3, in one embodiment, an auxiliary electrode material layer is first formed on the entire side of the prepared pixel definition layer 2 away from the array substrate 1. Then, a photolithography process is used to expose and develop the auxiliary electrode material layer to pattern the auxiliary electrode material layer and form the auxiliary electrode. In another embodiment, after forming the entire pixel definition material layer, the auxiliary electrode material layer can be formed on the entire side of the pixel definition material layer away from the array substrate 1. Then, a photolithography process is used to simultaneously expose and develop the auxiliary electrode material layer and the pixel definition material layer to form the auxiliary electrode portion 31, the dam portion 21, and the pixel opening 22, which helps to save one process step.

[0090] Furthermore, after step S1 and before step S2, the preparation method further includes: forming the anode layer 8 on one side of the array substrate 1, wherein the anode layer 8 includes a plurality of spaced anode portions 81.

[0091] S4: A first light-emitting material layer 43 is formed by spin coating, covering the side of the pixel definition layer 2 away from the array substrate 1 and the first top surface 311 of the auxiliary electrode portion 31. The first light-emitting material layer 43 exposes the first sidewall 312 of the auxiliary electrode portion 31.

[0092] Specifically, such as Figure 7BAs shown, step S4 includes the following steps: dissolving the luminescent material used to prepare the first luminescent part 4R in a solvent to form a mixed solution; then, the mixed solution can be spin-coated onto the surface of the pixel definition layer 2 and the auxiliary electrode part 31 using a coating equipment (such as a spin coating equipment); then, the mixed solution coated on the surface of the pixel definition layer 2 and the auxiliary electrode part 31 is dried by high-temperature heating or other methods to form the first luminescent material layer 43.

[0093] It should be noted that the embodiments of the present invention are described using the example of the first light-emitting part 4R being a red light-emitting part, but are not limited thereto.

[0094] S5: Form a cathode material layer 51 covering the side of the first light-emitting material layer 43 away from the array substrate 1 and the side of the first sidewall 312 of the exposed auxiliary electrode portion 31 near the pixel opening 22.

[0095] Specifically, such as Figure 7C As shown, in step S5, the cathode material layer 51 can be formed on the entire surface by coating or physical vapor deposition.

[0096] S6: Form an encapsulation material layer 61 covering the cathode material layer 51.

[0097] Specifically, such as Figure 7D As shown, in step S6, the encapsulation material layer 61 can be formed on the entire surface using a chemical vapor deposition process.

[0098] S7: A photolithography process is used to pattern the encapsulation material layer 61, the cathode material layer 51, and the first light-emitting material layer 43, removing portions of the encapsulation material layer 61, the cathode material layer 51, and the first light-emitting material layer 43 that do not correspond to the first light-emitting part 4R to be formed, so as to form the first light-emitting part 4R and the first cathode part 5R and the first encapsulation part 6R corresponding to the first light-emitting part 4R.

[0099] Specifically, such as Figures 7E-7I As shown, step S7 includes the following steps:

[0100] like Figure 7E As shown, a photoresist layer 20 is formed over the entire surface of the encapsulation material layer 61; as Figure 7F and Figure 7G As shown, a photomask 10 is used to perform yellow light processing on the photoresist layer 20 to form a patterned photoresist layer 20, the patterned photoresist layer 20 corresponding to the first light-emitting part 4R to be formed; as Figure 7HAs shown, using the patterned photoresist layer 20 as a mask, dry etching is performed on the encapsulation material layer 61, the cathode material layer 51, and the first light-emitting material layer 43 to remove portions of the encapsulation material layer 61, the cathode material layer 51, and the first light-emitting material layer 43 not covered by the patterned photoresist layer 20, thereby forming the first light-emitting portion 4R and the corresponding first cathode portion 5R and first encapsulation portion 6R; as Figure 7I As shown, the patterned photoresist layer 20 is peeled off.

[0101] Further, such as Figure 7J and Figure 7K As shown, after step S7, the preparation method further includes the following steps:

[0102] S81, a spin coating process is used to form a second light-emitting material layer covering the side of the pixel definition layer 2 away from the array substrate 1 and the first top surface 311 of the auxiliary electrode portion 31. The second light-emitting material layer exposes the first sidewall 312 of the auxiliary electrode portion 31. The second light-emitting material layer has a different color from the first light-emitting material layer 43.

[0103] S82, a cathode material layer 51 is formed covering the side of the second light-emitting material layer away from the array substrate 1 and the side of the first sidewall 312 of the exposed auxiliary electrode portion 31 near the pixel opening 22;

[0104] S83, forming an encapsulation material layer 61 covering the cathode material layer 51; and

[0105] S84, a photolithography process is used to pattern the encapsulation material layer 61, the cathode material layer 51 and the second light-emitting material layer, and to remove the portions of the encapsulation material layer 61, the cathode material layer 51 and the second light-emitting material layer that do not correspond to the second light-emitting part 4G to be formed, so as to form the second light-emitting part 4G and the second cathode part 5G and the second encapsulation part 6G corresponding to the second light-emitting part 4G.

[0106] Specifically, such as Figure 7J As shown, the second light-emitting part 4G can be a green light-emitting part, the second cathode part 5G covers the green light-emitting part, and the second encapsulation part 6G covers the second cathode part 5G.

[0107] Furthermore, the preparation method further includes the following steps:

[0108] S91, a spin coating process is used to form a third light-emitting material layer covering the side of the pixel definition layer 2 away from the array substrate 1 and the first top surface 311 of the auxiliary electrode portion 31. The third light-emitting material layer exposes the first sidewall 312 of the auxiliary electrode portion 31. The third light-emitting material layer has a different color from the first light-emitting material layer 43 and the second light-emitting material layer.

[0109] S92, a cathode material layer 51 is formed covering the side of the third light-emitting material layer away from the array substrate 1 and the side of the first sidewall 312 of the exposed auxiliary electrode portion 31 near the pixel opening 22;

[0110] S93, forming an encapsulation material layer 61 covering the cathode material layer 51; and

[0111] S94, a photolithography process is used to pattern the encapsulation material layer 61, the cathode material layer 51, and the third light-emitting material layer, removing portions of the encapsulation material layer 61, the cathode material layer 51, and the third light-emitting material layer that do not correspond to the third light-emitting part 4B to be formed, so as to form the third light-emitting part 4B and the third cathode part 5B and the third encapsulation part 6B corresponding to the third light-emitting part 4B.

[0112] Specifically, such as Figure 7K As shown, in step S9, the third light-emitting part 4B can be a blue light-emitting part, the third cathode part 5B covers the blue light-emitting part, and the third encapsulation part 6B covers the third cathode part 5B.

[0113] Of course, in other embodiments, the light emission colors of the first light-emitting part 4R, the second light-emitting part 4G, and the third light-emitting part 4B can also be a combination of red light-emitting parts, green light-emitting parts, and blue light-emitting parts, and the present invention does not limit this.

[0114] It should be noted that the specific formation process of the second light-emitting part 4G and the third light-emitting part 4B, the second cathode part 5G and the third cathode part 5B, the second encapsulation part 6G and the third encapsulation part 6B can be referred to the structural schematic diagram and detailed description of the formation of the first light-emitting part 4R, the first cathode part 5R and the first encapsulation part 6R in steps S4-S6 above, and will not be described in detail here.

[0115] It is understood that the first light-emitting part 4R, the second light-emitting part 4G, and the third light-emitting part 4B constitute the light-emitting layer 4, the first cathode part 5R, the second cathode part 5G, and the third cathode part 5B constitute the cathode layer 5, and the first encapsulation part 6R, the second encapsulation part 6G, and the third encapsulation part 6B constitute the first encapsulation layer 6.

[0116] Furthermore, after step S9, the preparation method further includes:

[0117] like Figure 7L As shown, in S10, a second encapsulation layer 7 is formed covering the side of the first encapsulation portion 6R, the second encapsulation portion 6G, and the third encapsulation portion 6B away from the array substrate 1.

[0118] Accordingly, embodiments of the present invention also provide a display device. This display device includes the display panel described above. The display device provided in the embodiments of the present invention can be at least one of a smartphone, tablet computer, mobile phone, video phone, e-book reader, laptop, netbook, workstation, server, personal digital assistant, portable media player, MP3 player, mobile medical device, camera, game console, digital camera, car navigation system, electronic billboard, ATM, smart bracelet, smartwatch, virtual reality device, or wearable device. The display panel has been described in detail in the above embodiments; therefore, further details about the display panel are not provided in the embodiments of the present invention.

[0119] Beneficial Effects: In the display panel and its manufacturing method provided in the embodiments of the present invention, multiple auxiliary electrode portions corresponding to multiple dam portions are provided on the side of the pixel definition layer away from the array substrate. On the one hand, the light-emitting layer in the present invention is formed by spin coating, which reduces the investment cost and maintenance cost of the evaporation equipment compared to the prior art which uses spin coating to replace the evaporation process to form the light-emitting layer. On the other hand, due to the characteristics of the spin coating process, the light-emitting layer in the present invention cannot be formed on the first sidewall of the auxiliary electrode portion, so that the sidewall of the auxiliary electrode portion is exposed and covered by the cathode layer, thereby realizing the electrical connection between the cathode layer and the auxiliary electrode layer, reducing the resistance of the cathode layer, and thus reducing the voltage drop of the cathode layer. This is beneficial to improving the uniformity of display brightness and display effect of the display panel, without the need to form an undercut structure for contacting the first sidewall with the cathode layer. While ensuring the reduction of the cathode layer resistance, it is beneficial to reduce the complexity of the process, save processes, and reduce costs.

[0120] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0121] The above provides a detailed description of a display panel and its manufacturing method provided by the embodiments of the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the technical solutions and core ideas of the present invention. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for manufacturing a display panel, characterized in that, Including the following steps: Provide an array substrate; A pixel definition layer is formed on one side of the array substrate. The pixel definition layer includes a plurality of dam portions and pixel openings located between two adjacent dam portions. An auxiliary electrode layer is formed on the side of the pixel definition layer away from the array substrate. The auxiliary electrode layer includes a plurality of auxiliary electrode portions that are disposed one-to-one with the plurality of dam portions. The auxiliary electrode portion includes a first top surface on the side away from the array substrate and a first sidewall connected to the first top surface. A first light-emitting material layer is formed by spin coating, covering the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portion. The first light-emitting material layer exposes the first sidewall of the auxiliary electrode portion. A cathode material layer is formed covering the side of the first light-emitting material layer away from the array substrate and the side of the first sidewall of the exposed auxiliary electrode portion near the pixel opening; Form an encapsulation material layer covering the cathode material layer; as well as A single photolithography process is used to pattern the encapsulation material layer, the cathode material layer, and the first light-emitting material layer, removing portions of the encapsulation material layer, the cathode material layer, and the first light-emitting material layer that do not correspond to the first light-emitting part to be formed, in order to form the first light-emitting part and the first cathode part and the first encapsulation part corresponding to the first light-emitting part.

2. The method for manufacturing a display panel according to claim 1, characterized in that, After forming the first light-emitting portion, the first cathode portion, and the first encapsulation portion, the fabrication method further includes the step of: A second light-emitting material layer is formed by spin coating, covering the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portion. The second light-emitting material layer exposes the first sidewall of the auxiliary electrode portion, and the second light-emitting material layer has a different color from the first light-emitting material layer. A cathode material layer is formed covering the side of the second light-emitting material layer away from the array substrate and the side of the second sidewall of the exposed auxiliary electrode portion near the pixel opening; Form an encapsulation material layer covering the cathode material layer; as well as The encapsulation material layer, the cathode material layer, and the second light-emitting material layer are patterned using a single photolithography process. Parts of the encapsulation material layer, the cathode material layer, and the second light-emitting material layer that do not correspond to the second light-emitting part to be formed are removed to form the second light-emitting part, as well as the second cathode part and the second encapsulation part corresponding to the second light-emitting part.

3. A display panel, characterized in that, The display panel is manufactured using the method described in any one of claims 1-2, and the display panel comprises: Array substrate; A pixel definition layer is disposed on one side of the array substrate, the pixel definition layer including a plurality of dam portions and pixel openings located between two adjacent dam portions; An auxiliary electrode layer is disposed on the side of the pixel definition layer away from the array substrate, and includes a plurality of auxiliary electrode portions disposed in a one-to-one correspondence with the plurality of dam portions. Each auxiliary electrode portion includes a first top surface on the side away from the array substrate and a first sidewall connected to the first top surface. A light-emitting layer covers the side of the pixel definition layer away from the array substrate and the first top surface of the auxiliary electrode portion, and exposes at least a portion of the first sidewall of the auxiliary electrode portion; and A cathode layer covers the side of the light-emitting layer away from the array substrate and covers the first sidewall.

4. The display panel according to claim 3, characterized in that, The dam portion includes a second top surface on the side away from the array substrate and a second sidewall connected to the second top surface; wherein the first sidewall of the auxiliary electrode portion and the second sidewall of the dam portion are connected at the second top surface.

5. The display panel according to claim 4, characterized in that, The angle between the first sidewall and the first top surface is less than or equal to the angle between the second sidewall and the second top surface.

6. The display panel according to claim 5, characterized in that, The angle between the first sidewall and the first top surface is greater than or equal to 90 degrees and less than 180 degrees.

7. The display panel according to claim 3, characterized in that, The light-emitting layer includes multiple light-emitting parts arranged in a matrix and emitting light of different colors. Each light-emitting part includes a first sub-light-emitting part and a second sub-light-emitting part. The first sub-light-emitting part is located inside the pixel opening, and the second sub-light-emitting part is located on the first top surface of the auxiliary electrode part. There is a gap between the two second sub-light-emitting parts located on the same auxiliary electrode part in two adjacent light-emitting parts.

8. The display panel according to claim 7, characterized in that, The cathode layer includes a plurality of cathode portions corresponding to the light-emitting portion, and the cathode portions cover the first sidewall of the first sub-light-emitting portion, the second sub-light-emitting portion and the auxiliary electrode portion; In the thickness direction of the display panel, the outer edge of the cathode portion away from the pixel opening is flush with the outer edge of the second sub-light-emitting portion away from the pixel opening.

9. The display panel according to claim 8, characterized in that, The display panel further includes a first encapsulation layer covering the side of the cathode layer away from the array substrate. The first encapsulation layer includes a plurality of encapsulation portions disposed corresponding to the light-emitting portion, and the encapsulation portions cover the cathode portion. In the thickness direction of the display panel, the outer edge of the encapsulation portion away from the pixel opening is flush with the outer edge of the cathode portion away from the pixel opening.

10. The display panel according to claim 9, characterized in that, The display panel further includes a second encapsulation layer that covers the side of the first encapsulation layer away from the array substrate and fills the gap.

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