A semiconductor radiation sensor

By using an electrode array and a voltage divider resistor array to form a deflection electric field in the X-ray sensor, rapid electron collection is achieved, solving the signal accumulation problem caused by the long collection path, improving the counting rate and detection efficiency, and increasing the volume of the sensitive area.

CN117849848BActive Publication Date: 2026-07-14CHINA INSTITUTE OF ATOMIC ENERGY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
CHINA INSTITUTE OF ATOMIC ENERGY
Filing Date
2023-12-01
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing X-ray sensors have long collection paths, resulting in long charge collection times, which can easily cause signal accumulation and affect the counting rate and detection efficiency.

Method used

An electrode array and a voltage divider resistor array within a cylindrical sensitive region are used to form a deflection electric field, causing the rays to drift radially to the central axis and then drift along the central axis to the collection region. After entering the collection region, electrons generate signals and are collected by the collection electrodes.

Benefits of technology

It shortens the electron collection path, improves the signal accumulation problem, increases the counting rate and X-ray detection efficiency, and increases the volume of the sensitive region while keeping the junction capacitance constant.

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    Figure CN117849848B_ABST
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Abstract

The semiconductor radiation sensor provided by the embodiment of the application comprises a cylindrical sensitive region, an electrode array, a voltage division resistor array and a collecting electrode. The electrode array comprises a plurality of electrodes arranged on the circumferential wall of the cylindrical sensitive region. The electrodes are arranged at intervals along the axial direction of the cylindrical sensitive region. The voltage division resistor array corresponds to the electrode array and is electrically connected to the electrode array, so that the electrode array forms a deflection electric field in the cylindrical sensitive region. The collecting electrode is arranged at one end of the axial direction of the cylindrical sensitive region. The region between the end of the electrode array close to the collecting electrode and the collecting electrode is defined as a collecting region. Under the action of the deflection electric field, electrons drift radially along the cylindrical sensitive region to the central axis of the cylindrical sensitive region, then drift along the central axis of the cylindrical sensitive region to the collecting region, generate a signal, and are collected by the collecting electrode. The semiconductor radiation sensor meets the requirements of low junction capacitance, large sensitive region volume and small collecting path.
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