Miniaturized broadband filtering substrate integrated waveguide horn antenna and wireless communication device

Abstract

The application discloses a miniaturized wideband filtering substrate integrated waveguide horn antenna and wireless communication equipment, which comprises a middle layer dielectric substrate extending to a horn aperture front end by a distance; upper and lower layer dielectric substrates are loaded at the horn aperture, and each of them is loaded with a row of metal columns to form a dipole array; a conversion structure is arranged between a grounded coplanar waveguide and a substrate integrated waveguide to improve impedance matching at a feeding position. The length of a horn flared part is shortened to realize longitudinal miniaturization; three groups of metal via arrays are embedded in the horn structure to correct the phase and amplitude of an electric field, improve deteriorated antenna gain, introduce a radiation zero point at an upper edge frequency and a lower edge frequency of a working passband respectively, and realize filtering function; four slits are etched on upper and lower metal surfaces of the middle layer dielectric substrate in the horn flared part to further correct the phase, and further improve the gain and filtering performance. The application simultaneously realizes longitudinal miniaturization and wideband filtering performance.

Description

Technical Field

[0001] This invention relates to the field of antenna technology, and in particular to a miniaturized broadband filter substrate integrated waveguide horn antenna and wireless communication device. Background Technology

[0002] Horn antennas are widely used in communication systems, radar, imaging, radio astronomy, and other fields. While 3D horn antennas can be used in these systems, they are typically large, expensive, and difficult to integrate with other components and devices within the system. Substrate-integrated waveguide technology offers a promising approach to realizing horn antennas using PCB design processes or other manufacturing techniques, enabling the design and implementation of large-scale planar substrate integrated circuits. Summary of the Invention

[0003] The primary objective of this invention is to overcome the shortcomings and deficiencies of existing technologies and provide a miniaturized broadband filtering substrate integrated waveguide horn antenna. This antenna achieves longitudinal miniaturization by shortening the length of the horn flare; improves degraded antenna gain by embedding three sets of metal via arrays in the horn flare; introduces a radiation null at both the upper and lower sidebands of the operating passband to achieve filtering; and further improves gain and filtering performance by etching two pairs of slots on the upper and lower metal layers of the intermediate dielectric substrate. Ultimately, this antenna simultaneously achieves longitudinal miniaturization and broadband filtering performance.

[0004] A second objective of the present invention is to provide a wireless communication device.

[0005] The first objective of this invention is achieved through the following technical solution: a miniaturized broadband filter substrate integrated waveguide horn antenna, comprising upper and lower dielectric substrates and a middle dielectric substrate. The upper and lower surfaces of the middle dielectric substrate are each provided with a metal layer, referred to as the upper and lower metal layers. From one end to the other, the middle dielectric substrate sequentially comprises a grounded coplanar waveguide, a conversion structure, a substrate integrated waveguide, and an H-plane horn structure. The conversion structure is used to improve impedance matching at the feed point. The middle dielectric substrate extends a certain distance towards the front end of the horn aperture of the H-plane horn structure to form a mounting position for mounting the upper and lower dielectric substrates. The substrate is mounted at the aforementioned mounting position, close to the horn aperture; a row of metal pillar arrays is loaded in each of the upper and lower dielectric substrates to improve impedance matching at the horn aperture; the length of the horn flare portion of the H-plane horn structure is shortened to achieve longitudinal miniaturization, and three sets of first metal via arrays are embedded in the horn flare portion to perform phase and amplitude distribution correction of the electric field to improve the deteriorated antenna gain; a radiation null is introduced at the upper and lower sidebands of the antenna operating passband to achieve filtering function; two pairs of first slots are etched on the upper and lower metal layers of the horn flare portion to further improve gain and filtering performance.

[0006] Furthermore, the upper and lower dielectric substrates are a pair of rectangular dielectric blocks symmetrical about the middle dielectric substrate. The rectangular dielectric blocks have the same width as the middle dielectric substrate and their ends are aligned. The two rows of metal pillar arrays are symmetrical about the middle dielectric substrate, and each row of metal pillar arrays consists of multiple metal pillars of the same size and with equal spacing.

[0007] Furthermore, the three sets of first metal via arrays consist of two sets of first metal via arrays symmetrically arranged along the centerline of the middle layer dielectric substrate and one set of first metal via arrays along the centerline of the middle layer dielectric substrate. The two sets of first metal via arrays symmetrically arranged along a 45° angle with equal spacing are each composed of a set of metal vias of the same size and a metal via of a different diameter at the end of the array. The set of first metal via arrays along the centerline consists of a set of metal vias of the same size arranged along the centerline with equal spacing.

[0008] Furthermore, the two pairs of first gaps etched are four gaps etched on the upper and lower metal layers of the intermediate dielectric substrate at an angle of 45°, symmetrical about the center line of the intermediate dielectric substrate.

[0009] Furthermore, the region where the grounded coplanar waveguide is located in the middle dielectric substrate is called region A. The grounded coplanar waveguide consists of the middle dielectric substrate portion of region A, the lower metal layer of region A, an upper metal layer etched with a pair of symmetrical second slots, and two rows of second metal via arrays symmetrically arranged on both sides of the pair of symmetrical second slots. The pair of symmetrical second slots and the two rows of second metal via arrays are symmetrical about the center line of the middle dielectric substrate. The two rows of second metal via arrays are parallel to the center line of the middle dielectric substrate and are all composed of metal vias of the same size arranged at equal intervals. The two rows of second metal via arrays are respectively connected to the upper and lower metal layers, and the height of the two rows of second metal via arrays is the thickness of the middle dielectric substrate.

[0010] Furthermore, the region of the transition structure located in the middle dielectric substrate is called region B. This transition structure consists of the middle dielectric substrate portion of region B, the lower metal layer of region B, an upper metal layer etched with a pair of symmetrical third slots, and two rows of third metal via arrays symmetrically arranged on both sides of the pair of symmetrical third slots. The pair of symmetrical third slots and the two rows of third metal via arrays are symmetrical about the center line of the middle dielectric substrate. The width of the pair of symmetrical third slots first increases and then decreases from the direction towards the substrate integrated waveguide. The pair of symmetrical third slots are connected to the symmetrical second slots. Each row of third metal via arrays consists of metal vias of the same size arranged at equal intervals. The distance between two symmetrical metal vias in the two rows of third metal via arrays gradually increases from the direction towards the substrate integrated waveguide. The two rows of third metal via arrays are connected to the upper and lower metal layers respectively. The height of the two rows of third metal via arrays is the thickness of the middle dielectric substrate.

[0011] Furthermore, the region of the substrate integrated waveguide located in the middle dielectric substrate is called region C. The substrate integrated waveguide consists of the middle dielectric substrate portion of region C, the upper and lower metal layers of region C, and two rows of fourth metal via arrays. The two rows of fourth metal via arrays are symmetrical about the center line of the middle dielectric substrate and are parallel to the center line of the middle dielectric substrate. Each row of fourth metal via arrays is composed of metal vias of the same size arranged at equal intervals. The upper and lower metal layers of region C constitute the wide side of the substrate integrated waveguide. The two rows of fourth metal via arrays are connected to the upper and lower metal layers respectively, constituting the narrow side of the substrate integrated waveguide. The height of the two rows of fourth metal via arrays is the thickness of the middle dielectric substrate.

[0012] Furthermore, the region of the H-side horn structure located on the middle dielectric substrate is called the D region. The H-side horn structure consists of the middle dielectric substrate portion of the D region, the upper and lower metal layers of the D region, and two rows of fifth metal via arrays. The two rows of fifth metal via arrays are symmetrical about the center line of the middle dielectric substrate. Each row of fifth metal via arrays serves as the E-side metal wall of the H-side horn structure and is composed of metal vias of the same size arranged at equal intervals. The distance between any two symmetrical metal vias in the two rows of fifth metal via arrays gradually increases from the direction towards the horn aperture. The two rows of fifth metal via arrays are connected to the upper and lower metal layers respectively. The upper and lower metal layers of the D region serve as the H-side metal walls of the H-side horn structure, and the height of the two rows of fifth metal via arrays is the thickness of the middle dielectric substrate.

[0013] The second objective of this invention is achieved through the following technical solution: a wireless communication device, including the miniaturized broadband filter substrate integrated waveguide horn antenna described above.

[0014] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0015] 1. The antenna of the present invention achieves longitudinal miniaturization by reducing the longitudinal length of the horn flare section; by loading a metal through-hole array into the horn flare section, the phase and amplitude distribution of the electric field are corrected, the deteriorated antenna gain is improved, and the filtering performance is integrated into the antenna, thus achieving both filtering and radiation, and miniaturizing the RF front end; the antenna of the present invention ultimately achieves both miniaturization and broadband filtering performance.

[0016] 2. The antenna of this invention employs a metal through-hole array and slot loading, achieving a high degree of longitudinal miniaturization with the horn flare section length reduced by approximately 70%. The impedance bandwidth is 26.79% (29.48-38.6GHz), with gains exceeding 10dB in the 30.05-36.8GHz and 26.93-38.02GHz ranges, and a peak gain of 11.7dB within the passband. Two radiation nulls with gains below -10.85dB and -9.39dB are introduced at 29 and 39.4GHz on the gain curve, respectively, achieving broadband filtering. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of a miniaturized broadband filter substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0018] Figure 2 This is a top view of a miniaturized broadband filter substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0019] Figure 3 This is a bottom view of the miniaturized broadband filter substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0020] Figure 4 This is a side view of a miniaturized broadband filter substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0021] Figure 5 The radiation pattern of the miniaturized broadband filter substrate integrated waveguide horn antenna in the E-plane at 32 GHz is shown in an embodiment of the present invention.

[0022] Figure 6 The radiation pattern of the miniaturized broadband filter substrate integrated waveguide horn antenna in the H-plane at 32 GHz is shown in an embodiment of the present invention.

[0023] Figure 7 The radiation pattern of the miniaturized broadband filter substrate integrated waveguide horn antenna in the E-plane at 34 GHz is shown in an embodiment of the present invention.

[0024] Figure 8 The radiation pattern of the miniaturized broadband filter substrate integrated waveguide horn antenna in the H-plane at 34 GHz is shown in an embodiment of the present invention.

[0025] Figure 9 The radiation pattern of the miniaturized broadband filter substrate integrated waveguide horn antenna in the E-plane at 36 GHz is shown in an embodiment of the present invention.

[0026] Figure 10 The radiation pattern of the miniaturized broadband filter substrate integrated waveguide horn antenna in the H-plane at 36 GHz is shown in this embodiment of the invention.

[0027] Figure 11The S-parameter diagram is shown for the miniaturized broadband filter substrate integrated waveguide horn antenna according to an embodiment of the present invention.

[0028] Figure 12 This is a gain curve diagram of the miniaturized broadband filter substrate integrated waveguide horn antenna according to an embodiment of the present invention. Detailed Implementation

[0029] The present invention will be further described in detail below with reference to the embodiments and accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0030] Example 1

[0031] Due to their advantages of small size, ease of integration, and simple manufacturing process, substrate integrated waveguide (SIW) H-planar horn antennas are competitive in millimeter-wave communication applications. As the requirements for RF front-end integration continue to increase, SIW horn antennas are also developing towards greater compactness. On the one hand, research on multifunctional antennas is becoming increasingly common, and filtered SIW H-planar horn antennas have been proposed. However, the bandwidth of the proposed filtered SIW H-planar horn antennas is relatively narrow and needs improvement. On the other hand, with a fixed horn aperture, directly shortening the horn length and then improving the degraded antenna performance through amplitude and phase adjustments are also possible. Therefore, this embodiment provides a miniaturized broadband filtered substrate integrated waveguide horn antenna.

[0032] like Figures 1 to 4 As shown, the miniaturized broadband filter substrate integrated waveguide horn antenna provided in this embodiment can be applied in wireless communication devices. The antenna includes upper and lower dielectric substrates 1 and 2, and a middle dielectric substrate 15. Metal layers are disposed on both the upper and lower surfaces of the middle dielectric substrate 15, referred to as the upper and lower metal layers. From one end to the other, the middle dielectric substrate 15 sequentially distributes a grounded coplanar waveguide 17, a conversion structure 18, a substrate integrated waveguide 14, and an H-plane horn structure. The conversion structure is used to improve impedance matching at the feed point. The middle dielectric substrate 15 extends a certain distance towards the front end of the horn aperture of the H-plane horn structure to form a mounting position for mounting the upper and lower dielectric substrates 1 and 2. The upper and lower dielectric substrates 1 and 2 are mounted at the aforementioned mounting positions and close to the horn aperture. A row of metal pillar arrays 3 and 4 are loaded in each of the upper and lower dielectric substrates 1 and 2 to improve impedance matching at the horn aperture. The length of the horn flare portion of the H-plane horn structure is shortened to achieve longitudinal miniaturization, and three sets of first metal through-hole arrays 5, 6, and 7 are embedded in the horn flare portion to perform phase and amplitude distribution correction of the electric field to improve the deteriorated antenna gain. A radiation null is introduced at the upper and lower sidebands of the antenna operating passband to achieve filtering function. Two pairs of first slots 8 and 9 are etched on the upper and lower metal layers of the horn flare portion to further improve gain and filtering performance.

[0033] Specifically, the upper and lower dielectric substrates 1 and 2 are a pair of rectangular dielectric blocks symmetrical about the middle dielectric substrate 15. The rectangular dielectric blocks have the same width as the middle dielectric substrate 15 and their ends are aligned. The two rows of metal pillar arrays 3 and 4 are symmetrical about the middle dielectric substrate 15. Each row of metal pillar arrays consists of multiple metal pillars of the same size and with equal spacing.

[0034] Specifically, the three sets of first metal via arrays 5, 6, and 7 consist of two sets of first metal via arrays 5 and 6 symmetrically arranged along the center line of the middle layer dielectric substrate and one set of first metal via arrays 7 on the center line of the middle layer dielectric substrate. The two sets of first metal via arrays 5 and 6 symmetrically arranged along a 45° angle with equal spacing are each composed of a set of metal vias of the same size and a metal via of a different diameter at the end of the array. The set of first metal via arrays 7 on the center line consists of a set of metal vias of the same size arranged along the center line with equal spacing.

[0035] Specifically, the two pairs of first slits 8 and 9 etched are four slits etched on the upper and lower metal layers of the intermediate dielectric substrate 15 with an inclination angle of 45° and symmetrical about the center line of the intermediate dielectric substrate 15 and the intermediate dielectric substrate.

[0036] Specifically, the area of ​​the grounded coplanar waveguide 17 located in the middle dielectric substrate 15 is called region A. The grounded coplanar waveguide 17 consists of the middle dielectric substrate portion of region A, the lower metal layer of region A, the upper metal layer etched with a pair of symmetrical second slots 10, and two rows of second metal via arrays 11 symmetrically arranged on both sides of the pair of symmetrical second slots 10. The pair of symmetrical second slots 10 and the two rows of second metal via arrays 11 are symmetrical about the center line of the middle dielectric substrate. The two rows of second metal via arrays 11 are parallel to the center line of the middle dielectric substrate and are all composed of metal vias of the same size arranged at equal intervals. The two rows of second metal via arrays 11 are connected to the upper and lower metal layers respectively, and the height of the two rows of second metal via arrays 11 is the thickness of the middle dielectric substrate 15.

[0037] Specifically, the region of the transition structure 18 located on the middle dielectric substrate 15 is called region B. The transition structure 18 consists of the middle dielectric substrate portion of region B, the lower metal layer of region B, an upper metal layer etched with a pair of symmetrical third slots 12, and two rows of third metal via arrays 13 symmetrically arranged on both sides of the pair of symmetrical third slots 12. The pair of symmetrical third slots 12 and the two rows of third metal via arrays 13 are symmetrical about the center line of the middle dielectric substrate. The width of the pair of symmetrical third slots 12 first increases and then decreases from the direction toward the substrate integrated waveguide 14. The pair of symmetrical third slots 12 are connected to the symmetrical second slots 10. Each row of third metal via arrays 13 is composed of metal vias of the same size arranged at equal intervals. The distance between two symmetrical metal vias in the two rows of third metal via arrays 13 gradually increases from the direction toward the substrate integrated waveguide 14. The two rows of third metal via arrays 13 are connected to the upper and lower metal layers respectively. The height of the two rows of third metal via arrays 13 is the thickness of the middle dielectric substrate 15.

[0038] Specifically, the region of the substrate integrated waveguide 14 located on the middle dielectric substrate 15 is called region C. The substrate integrated waveguide 14 consists of the middle dielectric substrate portion of region C, the upper and lower metal layers of region C, and two rows of fourth metal via arrays 19. The two rows of fourth metal via arrays 19 are symmetrical about the center line of the middle dielectric substrate and are parallel to the center line of the middle dielectric substrate. Each row of fourth metal via arrays 19 is composed of metal vias of the same size arranged at equal intervals. The upper and lower metal layers of region C form the wide side of the substrate integrated waveguide 14, and the two rows of fourth metal via arrays 19 are connected to the upper and lower metal layers respectively, forming the narrow side of the substrate integrated waveguide 14. The height of the two rows of fourth metal via arrays 19 is the thickness of the middle dielectric substrate 15.

[0039] Specifically, the region of the H-side horn structure located on the middle dielectric substrate 15 is called region D. The H-side horn structure consists of the middle dielectric substrate portion of region D, the upper and lower metal layers of region D, and two rows of fifth metal via arrays 16. The two rows of fifth metal via arrays 16 are symmetrical about the center line of the middle dielectric substrate. Each row of fifth metal via arrays 16 serves as the E-side metal wall of the H-side horn structure and is composed of metal vias of the same size arranged at equal intervals. The distance between two symmetrical metal vias in the two rows of fifth metal via arrays 16 gradually increases from the direction towards the horn aperture. The two rows of fifth metal via arrays 16 are connected to the upper and lower metal layers respectively. The upper and lower metal layers of region D serve as the H-side metal walls of the H-side horn structure. The height of the two rows of fifth metal via arrays 16 is the thickness of the middle dielectric substrate 15.

[0040] Specifically, the middle dielectric substrate 15 has a width of 26.2 mm and a length of 27.03 mm; the upper and lower dielectric substrates 1 and 2 have the same width and a length of 4 mm; the metal pillar arrays 3 and 4 in the upper and lower dielectric substrates 1 and 2 have a diameter of 0.8 mm and a spacing of 2.1 mm between adjacent metal pillars.

[0041] Specifically, the width of the two symmetrical third gaps 12 in the transformation structure gradually increases from 0.1 mm to 0.81 mm and then gradually decreases to 0 mm.

[0042] Specifically, the diameter of the metal through holes in the first metal through hole arrays 5, 6, and 7 is 0.5 mm and the spacing is 0.8 mm; the tilt angle of the first metal through hole arrays 5 and 6 is 45° and the diameter of the metal through hole at the end is 0.6 mm.

[0043] Specifically, the two pairs of first slits 8 and 9 etched are 5.66 mm long, 0.2 mm wide, and tilted at an angle of 45°.

[0044] Specifically, the diameter of the metal via is 0.8 mm, the distance between the centers of two adjacent metal vias is 1 mm in the second metal via array 11, 0.9 mm in the third metal via array 13, and 1.4 mm in the narrow side of the substrate integrated waveguide 14.

[0045] Specifically, the upper and lower dielectric substrates 1 and 2 and the middle dielectric substrate 15 are made of Rogers RO 3003, which has a dielectric constant of 3, a loss tangent of 0.0013, and a thickness of 1.524 mm.

[0046] This embodiment improves impedance matching at the horn antenna aperture by loading an extended dielectric substrate at the aperture, and by using a dipole array composed of upper and lower dielectric substrates and two rows of metal pillars. It further improves impedance matching at the feed point by employing a conversion structure from a grounded coplanar waveguide to a substrate-integrated waveguide. Vertical miniaturization is achieved by directly reducing the length of the horn flare (reducing the longitudinal length by approximately 70%). Phase and amplitude correction of the electric field are performed by loading a metal via array within the horn flare, improving the deteriorated antenna gain. A radiation null is introduced at both the upper and lower sidebands of the operating frequency band, integrating filtering performance. Phase correction is performed through etched slots, further improving gain and filtering performance. This embodiment achieves both vertical miniaturization (70%) and broadband filtering (26.79%).

[0047] Figure 5 and Figure 6 The above-described miniaturized broadband filter substrate integrated waveguide horn antenna in this embodiment has E-plane and H-plane radiation patterns at 32 GHz. As can be seen from the figures, the cross-polarization is less than -20 dB.

[0048] Figure 7 and Figure 8 The above-described miniaturized broadband filter substrate integrated waveguide horn antenna in this embodiment has E-plane and H-plane radiation patterns at 34 GHz. As can be seen from the figures, the cross-polarization is less than -20 dB.

[0049] Figure 9 and Figure 10 The above-described miniaturized broadband filter substrate integrated waveguide horn antenna in this embodiment has E-plane and H-plane radiation patterns at 36 GHz. As can be seen from the figures, the cross-polarization is less than -20 dB.

[0050] Figure 11 The figure shows the S-parameter simulation curves of the miniaturized broadband filter substrate integrated waveguide horn antenna described in this embodiment. As can be seen from the figure, the impedance bandwidth of the antenna is approximately 26.79% (29.48-38.6GHz).

[0051] Figure 12 The figure shows the gain simulation curves of the miniaturized broadband filter substrate integrated waveguide horn antenna described in this embodiment. As can be seen from the figure, the gain is higher than 10dB in the 30.05-36.8GHz and 26.93-38.02GHz ranges, with a peak gain of 11.7dB in the passband. Two radiation nulls with gains below -10.85dB and -9.39dB are introduced at 29 and 39.4GHz on the gain curve.

[0052] In summary, the longitudinal length of the antenna horn flare section of this invention is shortened by approximately 70%. Phase and amplitude correction of the electric field are achieved through a metal through-hole array loading, improving the deteriorated antenna gain. Two radiation nulls are introduced into the gain curve to achieve a filtered response. Slot loading further corrects the phase, further improving antenna gain and filtering performance. Impedance matching is adjusted by loading a dielectric substrate and dipole array at the horn aperture and employing a grounded coplanar waveguide to substrate integrated waveguide conversion structure at the feed. A broadband filtered response with two radiation nulls is achieved, with an impedance bandwidth of 26.79%. The two radiation nulls are located at 29 and 39.4 GHz, respectively, with gains below -10.85 and -9.39 dBi, respectively. Ultimately, a miniaturized broadband filtered substrate integrated waveguide horn antenna is realized.

[0053] Example 2

[0054] This embodiment provides a wireless communication device, including the miniaturized broadband filter substrate integrated waveguide horn antenna described in Embodiment 1.

[0055] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. A miniaturized broadband filter substrate integrated waveguide horn antenna, characterized in that, The system includes upper and lower dielectric substrates (1) and (2) and a middle dielectric substrate (15). The upper and lower surfaces of the middle dielectric substrate (15) are provided with metal layers, referred to as upper and lower metal layers. The middle dielectric substrate (15) has a grounded coplanar waveguide (17), a conversion structure (18), a substrate integrated waveguide (14), and an H-plane horn structure distributed sequentially from one end to the other. The conversion structure is used to improve impedance matching at the feed point. The middle dielectric substrate (15) extends a certain distance towards the front end of the horn aperture of the H-plane horn structure to form a mounting position for mounting the upper and lower dielectric substrates (1) and (2). The upper and lower dielectric substrates (1) and (2) are mounted on the aforementioned mounting positions. The horn is positioned close to the horn aperture; a row of metal pillar arrays (3) and (4) are loaded in the upper and lower dielectric substrates (1) and (2) respectively to improve the impedance matching at the horn aperture; the length of the horn flare of the H-plane horn structure is shortened to achieve longitudinal miniaturization, and three sets of first metal through-hole arrays (5), (6), and (7) are embedded in the horn flare to correct the phase and amplitude distribution of the electric field to improve the deteriorated antenna gain; a radiation null is introduced at the upper and lower sidebands of the antenna operating passband to achieve the filtering function; two pairs of first slots (8) and (9) are etched on the upper and lower metal layers of the horn flare to further improve the gain and filtering performance; The upper and lower dielectric substrates (1) and (2) are a pair of rectangular dielectric blocks symmetrical about the middle dielectric substrate (15). The rectangular dielectric blocks have the same width as the middle dielectric substrate (15) and their ends are aligned. The two rows of metal pillar arrays (3) and (4) are symmetrical about the middle layer dielectric substrate (15). Each row of metal pillar arrays consists of multiple metal pillars of the same size and with equal spacing. The three sets of first metal via arrays (5), (6), and (7) consist of two sets of first metal via arrays (5) and (6) symmetrically arranged along the center line of the middle layer dielectric substrate and one set of first metal via arrays (7) on the center line of the middle layer dielectric substrate. The two sets of first metal via arrays (5) and (6) symmetrically arranged along a 45° angle with equal spacing are each composed of a set of metal vias of the same size and a metal via of a different diameter at the end of the array. The set of first metal via arrays (7) on the center line consists of a set of metal vias of the same size arranged along the center line with equal spacing. The two pairs of first slits (8) and (9) etched are four slits etched on the upper and lower metal layers of the middle dielectric substrate (15) with an inclination angle of 45° and symmetrical about the center line of the middle dielectric substrate (15) and the middle dielectric substrate.

2. The miniaturized broadband filter substrate integrated waveguide horn antenna according to claim 1, characterized in that, The grounded coplanar waveguide (17) is located in the region of the middle dielectric substrate (15), which is called region A. The grounded coplanar waveguide (17) consists of the middle dielectric substrate portion of region A, the lower metal layer of region A, the upper metal layer etched with a pair of symmetrical second slots (10), and two rows of second metal via arrays (11) symmetrically arranged on both sides of the pair of symmetrical second slots (10). The pair of symmetrical second slots (10) and the two rows of second metal via arrays (11) are symmetrical about the center line of the middle dielectric substrate. The two rows of second metal via arrays (11) are parallel to the center line of the middle dielectric substrate and are all composed of metal vias of the same size arranged at equal intervals. The two rows of second metal via arrays (11) are connected to the upper and lower metal layers respectively. The height of the two rows of second metal via arrays (11) is the thickness of the middle dielectric substrate (15).

3. The miniaturized broadband filter substrate integrated waveguide horn antenna according to claim 2, characterized in that, The transition structure (18) is located in the region of the middle dielectric substrate (15), which is called region B. The transition structure (18) consists of the middle dielectric substrate portion of region B, the lower metal layer of region B, and the upper metal layer etched with a pair of symmetrical third gaps (12), and two rows of third metal via arrays (13) symmetrically arranged on both sides of the pair of symmetrical third gaps (12). The pair of symmetrical third gaps (12) and the two rows of third metal via arrays (13) are symmetrical about the center line of the middle dielectric substrate. The width of the pair of symmetrical third gaps (12) extends from the direction towards the substrate. The direction of the waveguide (14) first increases and then decreases. The pair of symmetrical third gaps (12) are connected to the symmetrical second gaps (10). Each row of third metal via arrays (13) is composed of metal vias of the same size arranged at equal intervals. The distance between two symmetrical metal vias in the two rows of third metal via arrays (13) gradually increases from the direction toward the substrate integrated waveguide (14). The two rows of third metal via arrays (13) are connected to the upper and lower metal layers respectively. The height of the two rows of third metal via arrays (13) is the thickness of the middle dielectric substrate (15).

4. The miniaturized broadband filter substrate integrated waveguide horn antenna according to claim 3, characterized in that, The region of the substrate integrated waveguide (14) located on the middle dielectric substrate (15) is called region C. The substrate integrated waveguide (14) consists of the middle dielectric substrate portion of region C, the upper and lower metal layers of region C, and two rows of fourth metal via arrays (19). The two rows of fourth metal via arrays (19) are symmetrical about the center line of the middle dielectric substrate and parallel to the center line of the middle dielectric substrate. Each row of fourth metal via arrays (19) is composed of metal vias of the same size arranged at equal intervals. The upper and lower metal layers of region C form the wide side of the substrate integrated waveguide (14). The two rows of fourth metal via arrays (19) are connected to the upper and lower metal layers respectively, forming the narrow side of the substrate integrated waveguide (14). The height of the two rows of fourth metal via arrays (19) is the thickness of the middle dielectric substrate (15).

5. The miniaturized broadband filter substrate integrated waveguide horn antenna according to claim 4, characterized in that, The area of ​​the H-face horn structure located on the middle dielectric substrate (15) is called the D region. The H-face horn structure consists of the middle dielectric substrate part of the D region, the upper and lower metal layers of the D region, and two rows of fifth metal via arrays (16). The two rows of fifth metal via arrays (16) are symmetrical about the center line of the middle dielectric substrate. Each row of fifth metal via arrays (16) serves as the E-face metal wall of the H-face horn structure. They are all composed of metal vias of the same size arranged at equal intervals. The distance between two symmetrical metal vias in the two rows of fifth metal via arrays (16) gradually increases from the direction towards the horn aperture. The two rows of fifth metal via arrays (16) are connected to the upper and lower metal layers respectively. The upper and lower metal layers of the D region serve as the H-face metal walls of the H-face horn structure. The height of the two rows of fifth metal via arrays (16) is the thickness of the middle dielectric substrate (15).

6. A wireless communication device, characterized in that, The miniaturized broadband filter substrate integrated waveguide horn antenna as described in any one of claims 1-5.

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