Multi-junction vcsel laser and its stack structure and manufacturing method

Abstract

Disclosed are a multi-junction VCSEL laser, a stacked structure thereof, and a manufacturing method. The VCSEL stacked structure comprises a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxidation confinement layer; the active regions, the tunnel junction, and the oxidation confinement layer are stacked with each other and located between the bottom DBR layer and the top DBR layer; each of the active regions comprises at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, the quantum well being located between the P-doped structure layer and the N-doped structure layer; and at least one of the oxidation confinement layers is closest to an N-doped structure layer.

Description

Technical Field

[0001] This application relates to the field of semiconductor lasers, and more specifically to multi-junction VCSEL lasers and their stacking structures and manufacturing methods. Background Technology

[0002] Multi-junction VCSEL lasers are VCSEL lasers with multiple quantum wells designed in their epitaxial structure, with adjacent quantum wells separated by tunnel junctions. In VCSEL laser applications, multi-junction VCSEL technology is one of the key technologies for achieving high efficiency and high power density. In recent years, with the increasing demand for high optical power and high optical power density in automotive lidar and other applications, the design of multi-junction VCSEL epitaxial structures has also flourished.

[0003] Multiple oxide confinement layers P1 are designed in the multi-junction VCSEL epitaxial structure, as shown in the attached figure in the specification. Figure 1 As shown. The oxide confinement layer P1 is mainly formed by oxidizing at least one structural layer. Specifically, in the fabrication process of a multi-junction VCSEL laser, multiple structural layers are first stacked on a substrate layer, wherein at least one structural layer is used as the confinement layer forming layer for the subsequent formation of the oxide confinement layer P1; in a subsequent process, the confinement layer forming layer is oxidized, such that the confinement layer forming layer is partially oxidized, and the partially oxidized confinement layer forming layer forms the oxide confinement layer P1.

[0004] In multi-junction VCSEL epitaxial structures, multiple oxide confinement layers P1 are directly stacked with the single-junction structure, making the design relatively simple. The oxidized portion P0 of the oxide confinement layer P1 is used to confine the current flow region, providing direct current confinement capability; at the same time, the oxidized portion P0 of the oxide confinement layer P1 has a low refractive index, which can also achieve an optical confinement effect to a certain extent; therefore, the oxide confinement layer P1 is a commonly used current confinement structure in VCSEL epitaxial structures.

[0005] However, the current oxide confinement layer P1 has some problems in practical applications. Specifically, in VCSEL epitaxial structures, the oxidation length or depth of the oxide confinement layer P1 is closely related to the photoelectric performance of the VCSEL, such as optical power, voltage, and divergence angle. In multi-junction VCSEL epitaxial structures, it is necessary not only to control the oxidation length or depth of a single oxide confinement layer P1, but also to control the oxidation length or depth of each oxide confinement layer P1, thereby controlling the relative oxidation length or depth of each oxide confinement layer P1 so that the oxidation length or depth of each oxide confinement layer P1 exhibits a desired trend. For example, in some practical applications, it is desirable for the oxidation length of each oxide confinement layer P1 to be consistent, as shown in the attached figure of the specification. Figure 1As shown in the attached diagram; in other practical applications, it is desirable for the oxidation length of each oxidation confinement layer P1 to gradually decrease from top to bottom, as shown in the attached diagram of the specification. Figure 2 As shown. However, in the actual epitaxial growth and structural layer oxidation process, the oxidation length or oxidation depth of each oxidation confinement layer P1 is difficult to control and easily deviates from the expected oxidation length or oxidation depth of the oxidation confinement layer P1. For example, it is desirable that the oxidation length of each oxidation confinement layer P1 is consistent, but in reality, the oxidation lengths of the multiple oxidation confinement layers P1 formed are different.

[0006] Therefore, a novel multi-junction VCSEL laser design is needed to improve the controllability of the confinement layer. Summary of the Invention

[0007] One advantage of this application is that it provides a multi-junction VCSEL laser, its stacking structure, and a manufacturing method thereof. The multi-junction VCSEL laser provides a novel multi-junction VCSEL laser structure design that can improve the controllability of the oxidation length or oxidation depth of the oxide confinement layer, so that the actual oxidation length or oxidation depth of the oxide confinement layer is as close as possible to the expected oxidation length or oxidation depth.

[0008] Another advantage of this application is that it provides a multi-junction VCSEL laser, its stacking structure, and a manufacturing method. The multi-junction VCSEL laser structure design provided in this application mainly adjusts the doping type of individual structural layers of the VCSEL laser compared to the traditional VCSEL laser structure design, and the modification is less difficult. In other words, this application can greatly improve the controllability of the oxidation length or oxidation depth of the oxide confinement layer by relatively simple modification of the traditional VCSEL laser structure.

[0009] Another advantage of this application is that it provides a multi-junction VCSEL laser, its stacking structure, and a manufacturing method thereof. The multi-junction VCSEL laser structure design provided in this application mainly adjusts the doping type of individual structural layers of the VCSEL laser compared to the traditional VCSEL laser structure design. Accordingly, the multi-junction VCSEL laser of this application can use the original VCSEL laser production line and production equipment during the manufacturing process, which can effectively reduce the production cost of the multi-junction VCSEL laser.

[0010] To achieve at least one of the above advantages or other advantages and objectives, according to one aspect of this application, a VCSEL stacking structure is provided, comprising: The device comprises a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer. Each active region includes at least one P-doped structural layer, at least one N-doped structural layer, and at least one quantum well, wherein the quantum well is located between the P-doped structural layer and the N-doped structural layer; the structural layer adjacent to at least one of the oxide confinement layers is an N-doped structural layer.

[0011] In one embodiment of the VCSEL stacked structure according to this application, the nearest structural layer to each of the oxide confinement layers is an N-type doped structural layer.

[0012] In one embodiment of the VCSEL stacked structure according to this application, the N-type doped structure layer of each active region is located above the P-doped structure layer of the active region, and the oxide confinement layer is located above the active region adjacent to it.

[0013] In one embodiment of the VCSEL stacked structure according to this application, the N-type doped structure layer of each active region is located below the P-doped structure layer of the active region, and the oxide confinement layer is located below the active region adjacent to it.

[0014] In one embodiment of the VCSEL stacked structure according to this application, the VCSEL stacked structure includes a plurality of said oxide confinement layers, wherein only a portion of the oxide confinement layers are adjacent to an N-type doped structural layer.

[0015] In one embodiment of the VCSEL stacked structure according to this application, the N-type doped structure layer of each active region is located above the P-doped structure layer of the active region, and only a portion of the oxide confinement layer is located above the active region.

[0016] In one embodiment of the VCSEL stacked structure according to this application, the N-type doped structure layer of each active region is located below the P-doped structure layer of the active region, and only a portion of the oxide confinement layer is located below the active region.

[0017] In one embodiment of the VCSEL stacked structure according to this application, the P-doped structure layer adjacent to the oxide confinement layer includes at least one AlGaAs material layer, and the aluminum content of the AlGaAs material layer of the P-doped structure layer adjacent to the oxide confinement layer is greater than or equal to 0.0 and less than or equal to 0.9; the N-doped structure layer adjacent to the oxide confinement layer includes at least one AlGaAs material layer, and the aluminum content of the AlGaAs material layer of the N-doped structure layer adjacent to the oxide confinement layer is greater than or equal to 0.0 and less than or equal to 0.9.

[0018] In one embodiment of the VCSEL stacked structure according to this application, the aluminum content of the oxide confinement layer is greater than or equal to 0.9 and less than or equal to 1.0.

[0019] According to another aspect of this application, a multijunction VCSEL laser is provided, comprising: An epitaxial structure is provided, comprising a substrate layer and a VCSEL stacked structure, wherein the VCSEL stacked structure is stacked on the substrate layer, and the VCSEL stacked structure includes: a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; each active region includes at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, wherein the quantum well is located between the P-doped structure layer and the N-doped structure layer; the structure layer adjacent to the at least one oxide confinement layer is the N-doped structure layer; A first electrode, the first electrode being connected to the epitaxial structure; and The second electrode is connected to the epitaxial structure.

[0020] According to another aspect of this application, a method for manufacturing a multi-junction VCSEL laser is provided, comprising: An epitaxial structure is formed, comprising a substrate layer and a VCSEL stacked structure, wherein the VCSEL stacked structure is stacked on the substrate layer, and the VCSEL stacked structure includes: a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; each active region includes at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, the quantum well being located between the P-doped structure layer and the N-doped structure layer; the structure layer adjacent to the at least one oxide confinement layer is the N-doped structure layer; and A first electrode and a second electrode are formed, and the first electrode and the second electrode are respectively connected to the epitaxial structure.

[0021] In one embodiment of the method for manufacturing a multi-junction VCSEL laser according to this application, forming an epitaxial structure includes: oxidizing a confinement layer to form the oxidized confinement layer; and during the oxidation of the confinement layer, introducing one or more of nitrogen, hydrogen, air, and water vapor into the confinement layer.

[0022] In one embodiment of the method for manufacturing a multi-junction VCSEL laser according to this application, during the oxidation of the confinement layer forming layer, the reaction temperature is greater than or equal to 200°C and less than or equal to 500°C.

[0023] In one embodiment of the method for manufacturing a multi-junction VCSEL laser according to this application, the reaction time during the oxidation of the confinement layer is greater than or equal to 30 seconds and less than or equal to 30 minutes.

[0024] The further objectives and advantages of this application will become fully apparent from the following description and accompanying drawings.

[0025] These and other objects, features and advantages of this application are fully apparent from the following detailed description, the accompanying drawings and the claims. Attached Figure Description

[0026] These and / or other aspects and advantages of this application will become clearer and more readily understood from the following detailed description of embodiments of this application taken in conjunction with the accompanying drawings, wherein: Figure 1 The illustration shows a schematic diagram of one embodiment of multiple oxide confinement layers in a conventional VCSEL epitaxial structure.

[0027] Figure 2 The illustration shows a schematic diagram of another embodiment of multiple oxide confinement layers in a conventional VCSEL epitaxial structure.

[0028] Figure 3 The figure shows a cross-sectional schematic diagram of one embodiment of a multi-junction VCSEL laser according to an embodiment of this application.

[0029] Figure 4 The figure shows a cross-sectional schematic diagram of another embodiment of a multi-junction VCSEL laser according to an embodiment of this application.

[0030] Figure 5 The figure shows a cross-sectional schematic diagram of yet another embodiment of a multi-junction VCSEL laser according to an embodiment of this application.

[0031] Figure 6The figure shows a cross-sectional schematic diagram of yet another embodiment of a multi-junction VCSEL laser according to an embodiment of this application.

[0032] Figure 7 The illustration shows a flowchart of a method for manufacturing a multi-junction VCSEL laser according to an embodiment of this application. Detailed Implementation

[0033] The terms and words used in the following specification and claims are not limited to their literal meaning, but are used solely by the inventors to enable a clear and consistent understanding of this application. Therefore, it will be apparent to those skilled in the art that the following description of various embodiments of this application is provided for illustrative purposes only and not for the purpose of limiting this application as defined in the appended claims and their equivalents.

[0034] It is understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element can be multiple, and the term "a" should not be understood as a limitation on the number.

[0035] While ordinal numbers such as "first," "second," etc., will be used to describe various components, there is no limitation on which components are used herein. The term is used only to distinguish one component from another. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component, without departing from the teachings of this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0036] The terminology used herein is for the purpose of describing various embodiments only and is not intended to be limiting. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. It will also be understood that the terms “comprising” and / or “having” as used in this specification specify the presence of the described features, numbers, steps, operations, components, elements or combinations thereof, without excluding the presence or addition of one or more other features, numbers, steps, operations, components, elements or groups thereof.

[0037] Application Overview: As mentioned earlier, in the actual epitaxial growth and structural layer oxidation process, the oxidation length or depth of each oxidation confinement layer is difficult to control and easily deviates from the expected oxidation length or depth. For example, it is desirable for the oxidation length of each oxidation confinement layer to be consistent; however, the actual oxidation lengths of the multiple oxidation confinement layers formed are different.

[0038] In theory, the element content ratio or thickness of the confinement layer used to form the oxide confinement layer can be controlled during the epitaxial structure design and growth stage, thereby affecting the oxidation length or oxidation depth of the subsequently formed oxide confinement layer.

[0039] It is worth mentioning that the inventors of this application have discovered that during the epitaxial growth and structural layer oxidation process, the structure of the structural layer adjacent to the confinement layer forming layer, such as the element content ratio, doping concentration, and structural layer thickness, can affect the structure of the confinement layer forming layer, thereby affecting the oxidation length or oxidation depth of the final oxidized confinement layer.

[0040] Furthermore, when the structural layer adjacent to the confinement layer is a P-type doped structural layer, it has a significant impact on the structure of the confinement layer. In VCSEL epitaxial structures, the more tunnel junctions there are, the more P-type doped structural layers there are, and the combined effect of each P-type doped structural layer on the confinement layer is greater. Therefore, in multi-junction VCSEL epitaxial structures, the influence of P-type doped structural layers on the structure of the confinement layer is particularly prominent, and consequently, its impact on the subsequent oxidation results is especially significant, making the structure of the final oxide confinement layer more difficult to control. However, in existing multi-junction VCSEL lasers, the oxide confinement layer and the structural layers adjacent to it are usually P-type doped structural layers.

[0041] Based on this, this application proposes designing the structural layer adjacent to the confinement layer as an N-type doped structural layer to significantly reduce the impact on the structure of the confinement layer, thereby improving the controllability of the structure of the subsequently formed oxide confinement layer and ensuring the performance stability and yield of the VCSEL laser. Correspondingly, designing the structural layer adjacent to the confinement layer as an N-type doped structural layer in the final VCSEL laser structure manifests as the structural layer adjacent to the oxide confinement layer being an N-type doped structural layer.

[0042] Accordingly, this application proposes a VCSEL stacked structure, comprising: a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; each active region comprises at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, the quantum well being located between the P-doped structure layer and the N-doped structure layer; the structure layer adjacent to the at least one oxide confinement layer is an N-doped structure layer.

[0043] This application also proposes a VCSEL laser, comprising: an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a substrate layer and a VCSEL stacked structure, the VCSEL stacked structure being stacked on the substrate layer. The VCSEL stacked structure includes: a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; each active region includes at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, the quantum well being located between the P-doped structure layer and the N-doped structure layer; the structure layer adjacent to the at least one oxide confinement layer is an N-doped structure layer. The first electrode and the second electrode are respectively connected to the epitaxial structure.

[0044] After introducing the basic principles of this application, various non-limiting embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0045] Schematic multijunction VCSEL laser: such as Figures 3 to 6 As shown, a multi-junction VCSEL laser 1 according to an embodiment of this application is illustrated. The multi-junction VCSEL laser 1 provides a novel design scheme that improves the controllability of structural features of the oxide confinement layer 124, such as oxide length or oxide depth, so that the actual oxide length or oxide depth of the oxide confinement layer 124 is as close as possible to the expected oxide length or oxide depth. Specifically, in the multi-junction VCSEL laser 1 of this application, the structure of the adjacent layer of the oxide confinement layer 124 is mainly designed so that the adjacent layer of the oxide confinement layer 124 of the VCSEL laser is an N-type doped structure layer.

[0046] In this embodiment, the multi-junction VCSEL laser 1 includes an epitaxial structure 10, a first electrode 20, and a second electrode 30, wherein the first electrode 20 and the second electrode 30 are respectively connected to the epitaxial structure 10. The epitaxial structure 10 includes multiple structural layers. Specifically, the epitaxial structure 10 includes a substrate layer 11 and a VCSEL stacked structure 12. The VCSEL stacked structure 12 is stacked on the substrate layer 11. The VCSEL stacked structure 12 includes: a bottom DBR layer 121, a top DBR layer 125, at least two active regions 122, at least one tunnel junction 123, and at least one oxide confinement layer 124. Correspondingly, the multiple structural layers of the epitaxial structure 10 include the substrate layer 11 and multiple structural layers in the VCSEL stacked structure 12, wherein the multiple structural layers in the VCSEL stacked structure 12 include a bottom DBR layer 121, a top DBR layer 125, at least two active regions 122, at least one tunnel junction 123, and at least one oxide confinement layer 124.

[0047] The bottom DBR layer 121 is formed on the substrate layer 11; the active region 122, the tunnel junction 123, and the oxide confinement layer 124 are stacked on top of each other, and the active region 122, the tunnel junction 123, and the oxide confinement layer 124 are located between the bottom DBR layer 121 and the top DBR layer 125. The epitaxial structure 10 also includes a top electrode contact layer 126, which is formed on the top DBR layer 125. The formation positions of the first electrode 20 and the second electrode 30 are not limited to those specified in this application. For example, the first electrode 20 is formed on the top electrode contact layer 126, and the second electrode 30 is stacked on the substrate layer 11, or on the bottom DBR layer 121, or at other locations.

[0048] The substrate layer 11 can be implemented as an N-type substrate layer or a P-type substrate layer, and the material used to make the substrate layer 11 can be doped InP, GaN, GaAs, or other similar materials.

[0049] The doping types of the bottom DBR layer 121 and the top DBR layer 125 can be set as needed. Accordingly, the bottom DBR layer 121 can be implemented as a bottom N-DBR layer or a bottom P-DBR layer. The top DBR layer 125 can be implemented as a top N-DBR layer or a top P-DBR layer.

[0050] The N-DBR layer is formed by alternating layers of N-type doped high- and low-reflectivity materials, and can be, but is not limited to, Al-type doped high- and low-reflectivity materials.x Ga 1-x Alternating layers of As (x=1~0) are formed. The P-DBR layer is formed by alternating layers of P-type doped high- and low-reflectivity materials, which can be, but are not limited to, P-type doped high- and low-reflectivity Al. x Ga 1-x Alternating layers of As (x=1~0) are formed. Accordingly, the N-DBR layer includes at least one N-type doped structure layer, wherein the N-type doped structure layer of the N-DBR layer can be made of N-type doped Al. x Ga 1-x As (x=1~0), the N-type doped structure layer of the N-DBR layer includes at least one AlGaAs material layer; the P-DBR layer includes at least one P-type doped structure layer, and the material of the P-type doped structure layer of the P-DBR layer can be P-type doped Al. x Ga 1-x As (x=1~0), the P-type doped structure layer of the P-DBR layer includes at least one AlGaAs material layer.

[0051] The tunnel junction 123 is used to reverse the carrier type between the bottom DBR layer 121 and the top DBR layer 125. For example, the tunnel junction 123 can switch carriers from the bottom DBR layer 121 to the P-type doped structure layer. The tunnel junction 123 is composed of at least one P-type doped structure layer and at least one N-type doped structure layer. The N-type doped structure layer and the P-type doped structure layer of the tunnel junction 123 can be made of Al. x Ga 1-x As (x=1~0). In other words, optionally, the P-type doped structure layer of the tunnel junction 123 may include at least one AlGaAs material layer, and the N-type doped structure layer of the tunnel junction 123 may include at least one AlGaAs material layer. It should be understood that the P-type and N-type doped structure layers of the tunnel junction 123 may also be made of other materials. Furthermore, the doping concentration of both the P-type and N-type doped structure layers of the tunnel junction 123 is high (>5e). 18 cm -3 ).

[0052] The tunnel junction 123 can be disposed on the upper side of the active region 122 or on the lower side of the active region 122.

[0053] The active region 122 forms a resonant cavity between the top DBR layer 125 and the bottom DBR layer 121. Photons, after being excited, are repeatedly amplified by reflection within the resonant cavity to form laser oscillations, thereby generating a laser beam. Those skilled in the art will understand that the laser emission direction can be selectively controlled by configuring and designing the top DBR layer 125, the bottom DBR layer 121, and the tunnel junction 123. For example, the laser can be emitted from the bottom DBR layer 121 or from the top DBR layer 125. Accordingly, the top DBR layer 125, the bottom DBR layer 121, and the tunnel junction 123 are configured such that, after the multi-junction VCSEL laser 1 is turned on, the laser beam generated by the active region 122 is reflected multiple times within the resonant cavity formed between the top DBR layer 125 and the bottom DBR layer 121 and then emitted from either the top DBR layer 125 or the bottom DBR layer 121.

[0054] Each active region 122 includes at least one P-type doped structure layer and at least one N-type doped structure layer, with a quantum well 1230 formed between the P-type doped structure layer and the N-type doped structure layer. The N-type doped structure layer and the P-type doped structure layer of the active region 122 can be made of Al. x Ga 1-x As (x=1~0). In other words, optionally, the P-type doped structure layer of the active region 122 may include at least one AlGaAs material layer, and the N-type doped structure layer of the active region 122 may include at least one AlGaAs material layer. It should be understood that the P-type doped structure layer and the N-type doped structure layer of the active region 122 may also be made of other materials.

[0055] In some embodiments, the P-type doped structure layer of the active region 122 is located above the N-type doped structure layer of the active region 122. In other embodiments, the N-type doped structure layer of the active region 122 is located above the P-type doped structure layer of the active region 122.

[0056] The multi-junction VCSEL laser 1 comprises multiple structural layers, each including at least one P-type doped structural layer and / or at least one N-type doped structural layer. In this embodiment, to distinguish between the P-type and N-type doped structural layers in different structural layers, the P-type doped structural layer of the tunnel junction 123 is referred to as the junction P-type doped structural layer, and the N-type doped structural layer of the tunnel junction 123 is referred to as the junction N-type doped structural layer; the P-type doped structural layer of the active region 122 is referred to as the active P-type doped structural layer 12. 10; The N-type doped structure layer of the active region 122 is referred to as the active N-type doped structure layer 1220; the P-type doped structure layer of the top DBR layer 125 is referred to as the top mirror P-type doped structure layer; the N-type doped structure layer of the top DBR layer 125 is referred to as the top mirror N-type doped structure layer; the P-type doped structure layer of the bottom DBR layer 121 is referred to as the bottom mirror P-type doped structure layer; the N-type doped structure layer of the bottom DBR layer 121 is referred to as the bottom mirror N-type doped structure layer.

[0057] The oxidation confinement layer 124 has a central region located at its center and a peripheral region surrounding the central region, wherein the central region of the oxidation confinement layer 124 forms a confinement hole and the peripheral region forms a confinement area.

[0058] After the multi-junction VCSEL laser 1 is turned on, the current flow is restricted by the oxide confinement layer 124 and is ultimately guided into the central region of the multi-junction VCSEL laser 1, so that laser light is generated in the central region of the active region 122. Specifically, the confinement region has a high resistivity to restrict the flow of charge carriers into the central region of the multi-junction VCSEL laser 1, and the confinement region has a low refractive index to laterally confine photons. The carrier and optical lateral confinement increase the density of charge carriers and photons in the active region 122, thereby improving the efficiency of light generation in the active region 122.

[0059] As mentioned above, in the multi-junction VCSEL laser 1 of this application, the structure of the adjacent layer of the oxide confinement layer 124 of the multi-junction VCSEL laser 1 is mainly designed so that the adjacent layer of the oxide confinement layer 124 of the VCSEL laser is an N-type doped structure layer. Accordingly, in the embodiments of this application, at least one of the adjacent structural layers of the oxide confinement layer 124 is an N-type doped structure layer.

[0060] The oxide confinement layer 124 is adjacent to the active region 122 and the tunnel junction 123. The nearest structural layer of the oxide confinement layer 124 can be an N-type doped structural layer by adjusting the positional relationship between the oxide confinement layer 124 and the active region 122, the positional relationship between the oxide confinement layer 124 and the tunnel junction 123, the structure of the active region 122, and the structure of the tunnel junction 123.

[0061] In this embodiment, the number of active regions 122, oxide confinement layers 124, and tunnel junctions 123 is not limited to this application. The following description uses an example of a VCSEL stack structure 12 with three active regions 122, three oxide confinement layers 124, and two tunnel junctions 123 to illustrate the structural configuration of the VCSEL stack structure 12. The VCSEL stack structure 12 includes three active regions 122: a first active region 1221, a second active region 1222, and a third active region 1223; it also includes two tunnel junctions 123: a first tunnel junction 1231 and a second tunnel junction 1232; and it includes three oxide confinement layers 124: a first oxide confinement layer 1241, a second oxide confinement layer 1242, and a third oxide confinement layer 1243.

[0062] It should be understood that the number of active regions 122, oxide confinement layers 124 and tunnel junctions 123 can also be configured in other ways. For example, the number of tunnel junctions 123 can be greater than 2 or less than 2. For example, the number of active regions 122 can be greater than 3 or less than 3, and the number of oxide confinement layers 124 can also be greater than 3 or less than 3.

[0063] In some embodiments of this application, the nearest structural layer to each oxide confinement layer 124 is an N-type doped structural layer. Furthermore, the N-type doped structural layer of each active region 122 is located above the P-doped structural layer of the active region 122, and each oxide confinement layer 124 is located above the adjacent active region 122.

[0064] For example, in one example of this application, such as Figure 3As shown, the first active region 1221 is formed on the upper side of the bottom DBR layer 121, the first oxide confinement layer 1241 is formed on the upper side of the first active region 1221, and the first tunnel junction 1231 is formed on the upper side of the first oxide confinement layer 1241; the second active region 1222 is formed on the upper side of the first tunnel junction 1231, the second oxide confinement layer 1242 is formed on the upper side of the second active region 1222, and the second tunnel junction 1232 is formed on the upper side of the second oxide confinement layer 1242; the third active region 1223 is formed on the upper side of the second tunnel junction 1232, and the third oxide confinement layer 1243 is formed on the upper side of the third active region 1223. That is, the first active region 1221, the first oxide confinement layer 1241, the first tunnel junction 1231, the second active region 1222, the second oxide confinement layer 1242, the second tunnel junction 1232, the third active region 1223, and the third oxide confinement layer 1243 are stacked on the bottom DBR layer 121 from bottom to top.

[0065] The structural layers closest to the first oxide confinement layer 1241 are the upper structural layer of the first active region 1221 and the lower structural layer of the first tunnel junction 1231. Correspondingly, the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221, is located above the P-type doped structural layer of the first active region 1221, i.e., the active P-type doped structural layer 1210 of the first active region 1221, and the first oxide confinement layer 1241 is located above the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221. Preferably, the N-type doped structural layer of the first tunnel junction 1231 is located below the P-type doped structural layer of the first tunnel junction 1231.

[0066] The structural layers closest to the second oxide confinement layer 1242 are the upper structural layer of the second active region 1222 and the lower structural layer of the second tunnel junction 1232. Correspondingly, the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222, is located above the P-type doped structural layer of the second active region 1222, i.e., the active P-type doped structural layer 1210 of the second active region 1222, and the second oxide confinement layer 1242 is located above the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222. Preferably, the N-type doped structural layer of the second tunnel junction 1232 is located below the P-type doped structural layer of the second tunnel junction 1232.

[0067] The structural layers closest to the third oxide confinement layer 1243 are the upper structural layer of the third active region 1223 and the lower structural layer of the top DBR layer 125. Correspondingly, the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223, is located above the P-type doped structural layer of the third active region 1223, i.e., the active P-type doped structural layer 1210 of the third active region 1223, and the third oxide confinement layer 1243 is located above the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223. Preferably, the top DBR layer 125 is a top N-DBR layer.

[0068] In some other embodiments of this application, the nearest structural layer to each of the oxide confinement layers 124 is an N-type doped structural layer. Furthermore, the N-type doped structural layer of each of the active regions 122 is located below the P-doped structural layer of the active region 122, and each of the oxide confinement layers 124 is located below the adjacent active region 122.

[0069] For example, in one example of this application, such as Figure 4As shown, the first oxide confinement layer 1241 is formed on the upper side of the bottom DBR layer 121, the first active region 1221 is formed on the upper side of the first oxide confinement layer 1241, and the first tunnel junction 1231 is formed on the upper side of the first active region 1221; the second oxide confinement layer 1242 is formed on the upper side of the first tunnel junction 1231, the second active region 1222 is formed on the upper side of the second oxide confinement layer 1242, and the second tunnel junction 1232 is formed on the upper side of the second active region 1222; the third oxide confinement layer 1243 is formed on the upper side of the second tunnel junction 1232, and the third active region 1223 is formed on the upper side of the third oxide confinement layer 1243. That is, the first oxide confinement layer 1241, the first active region 1221, the first tunnel junction 1231, the second oxide confinement layer 1242, the second active region 1222, the second tunnel junction 1232, the third oxide confinement layer 1243, and the third active region 1223 are stacked on the bottom DBR layer 121 from bottom to top.

[0070] The structural layers closest to the first oxide confinement layer 1241 are the upper structural layer of the bottom DBR layer 121 and the lower structural layer of the first active region 1221. Correspondingly, the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221, is located below the P-type doped structural layer of the first active region 1221, i.e., the active P-type doped structural layer 12210 of the first active region 1221, and the first oxide confinement layer 1241 is located below the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221. Preferably, the bottom DBR layer 121 is a bottom N-DBR layer.

[0071] The structural layers closest to the second oxide confinement layer 1242 are the lower structural layer of the second active region 1222 and the upper structural layer of the first tunnel junction 1231. Correspondingly, the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222, is located below the P-type doped structural layer of the second active region 1222, i.e., the active P-type doped structural layer 1210 of the second active region 1222, and the second oxide confinement layer 1242 is located below the N-type doped structural layer of the second active region 1222. Preferably, the N-type doped structural layer of the first tunnel junction 1231 is located above the P-type doped structural layer of the second tunnel junction 1232.

[0072] The structural layers closest to the third oxide confinement layer 1243 are the lower structural layer of the third active region 1223 and the upper structural layer of the second tunnel junction 1232. Correspondingly, the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223, is located below the P-type doped structural layer of the third active region 1223, i.e., the active P-type doped structural layer 1210 of the third active region 1223, and the third oxide confinement layer 1243 is located below the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223. Preferably, the N-type doped structural layer of the second tunnel junction 1232 is located above the P-type doped structural layer of the second tunnel junction 1232.

[0073] In some other embodiments of this application, only a portion of the adjacent structural layers of the oxide confinement layer 124 are N-type doped structural layers, that is, at least one of the adjacent structural layers of the oxide confinement layer 124 is a P-type doped structural layer or an undoped structural layer. Furthermore, the N-type doped structural layer of each active region 122 is located above the P-doped structural layer of the active region 122, and only a portion of the oxide confinement layer 124 is located above the active region 122.

[0074] For example, in one example of this application, such as Figure 5As shown, the lowest oxide confinement layer 124 among the plurality of oxide confinement layers 124, namely the first oxide confinement layer 1241, is located below the nearest active region 122. The first oxide confinement layer 1241 is formed above the bottom DBR layer 121, the first active region 1221 is formed above the first oxide confinement layer 1241, and the first tunnel junction 1231 is formed above the first active region 1221; the second active region 1222 is formed above the first tunnel junction 1231, the second oxide confinement layer 1242 is formed above the second active region 1222, and the second tunnel junction 1232 is formed above the second oxide confinement layer 1242; the third active region 1223 is formed above the second tunnel junction 1232, and the third oxide confinement layer 1243 is formed above the third active region 1223. That is, the first oxide confinement layer 1241, the first active region 1221, the first tunnel junction 1231, the second active region 1222, the second oxide confinement layer 1242, the second tunnel junction 1232, the third active region 1223, and the third oxide confinement layer 1243 are stacked on the bottom DBR layer 121 from bottom to top.

[0075] The structural layers closest to the first oxide confinement layer 1241 are the upper structural layer of the bottom DBR layer 121 and the lower structural layer of the first active region 1221. Correspondingly, the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221, is located above the P-type doped structural layer of the first active region 1221, i.e., the active P-type doped structural layer 1210 of the first active region 1221, and the first oxide confinement layer 1241 is located below the P-type doped structural layer of the first active region 1221, i.e., the active P-type doped structural layer 1210 of the first active region 1221.

[0076] The structural layers closest to the second oxide confinement layer 1242 are the upper structural layer of the second active region 1222 and the lower structural layer of the second tunnel junction 1232. Correspondingly, the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222, is located above the P-type doped structural layer of the second active region 1222, i.e., the active P-type doped structural layer 1210 of the second active region 1222, and the second oxide confinement layer 1242 is located above the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222. Preferably, the N-type doped structural layer of the second tunnel junction 1232 is located below the P-type doped structural layer of the second tunnel junction 1232.

[0077] The structural layers closest to the third oxide confinement layer 1243 are the upper structural layer of the third active region 1223 and the lower structural layer of the top DBR layer 125. Correspondingly, the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223, is located above the P-type doped structural layer of the third active region 1223, i.e., the active P-type doped structural layer 1210 of the third active region 1223, and the third oxide confinement layer 1243 is located above the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223. Preferably, the top DBR layer 125 is a top N-DBR layer.

[0078] It should be understood that in other embodiments, the implementation may be as follows: the N-type doped structure layer of each active region 122 is located above the P-doped structure layer of the active region 122, and the other oxide confinement layers 124 are located below the active region 122. For example, the second oxide confinement layer 1242 is located below the second active region 1222, and / or the third oxide confinement layer 1443 is located below the third active region 1223.

[0079] In some other embodiments of this application, only a portion of the adjacent structural layers of the oxide confinement layer 124 are N-type doped structural layers, that is, at least one of the adjacent structural layers of the oxide confinement layer 124 is a P-type doped structural layer or an undoped structural layer. Furthermore, the N-type doped structural layer of each active region 122 is located below the P-doped structural layer of the active region 122, and only a portion of the oxide confinement layer 124 is located below the active region 122.

[0080] For example, in one example of this application, such as Figure 6 As shown, the topmost oxide confinement layer 124 among the plurality of oxide confinement layers 124, namely the third oxide confinement layer 1243, is located below the active region 122 closest to it. The first oxide confinement layer 1241 is formed above the bottom DBR layer 121, the first active region 1221 is formed above the first oxide confinement layer 1241, and the first tunnel junction 1231 is formed above the first active region 1221; the second oxide confinement layer 1242 is formed above the first tunnel junction 1231, the second active region 1222 is formed above the second oxide confinement layer 1242, and the second tunnel junction 1232 is formed above the second active region 1222; the third active region 1223 is formed above the second tunnel junction 1232, and the third oxide confinement layer 1243 is formed above the third active region 1223. That is, the first oxide confinement layer 1241, the first active region 1221, the first tunnel junction 1231, the second oxide confinement layer 1242, the second active region 1222, the second tunnel junction 1232, the third active region 1223, and the third oxide confinement layer 1243 are stacked on the bottom DBR layer 121 from bottom to top.

[0081] The structural layers closest to the first oxide confinement layer 1241 are the upper structural layer of the bottom DBR layer 121 and the lower structural layer of the first active region 1221. Correspondingly, the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221, is located below the P-type doped structural layer of the first active region 1221, i.e., the active P-type doped structural layer 1210 of the first active region 1221, and the first oxide confinement layer 1241 is located below the N-type doped structural layer of the first active region 1221, i.e., the active N-type doped structural layer 1220 of the first active region 1221. Preferably, the bottom DBR layer 121 is a bottom N-DBR layer.

[0082] The structural layers closest to the second oxide confinement layer 1242 are the lower structural layer of the second active region 1222 and the upper structural layer of the first tunnel junction 1231. Correspondingly, the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222, is located below the P-type doped structural layer of the second active region 1222, i.e., the active P-type doped structural layer 1210 of the second active region 1222, and the second oxide confinement layer 1242 is located below the N-type doped structural layer of the second active region 1222, i.e., the active N-type doped structural layer 1220 of the second active region 1222. Preferably, the N-type doped structural layer of the first tunnel junction 1231 is located above the P-type doped structural layer of the second tunnel junction 1232.

[0083] The structural layers closest to the third oxide confinement layer 1243 are the upper structural layer of the third active region 1223 and the lower structural layer of the top DBR layer 125. Correspondingly, the N-type doped structural layer of the third active region 1223, i.e., the active N-type doped structural layer 1220 of the third active region 1223, is located below the P-type doped structural layer of the third active region 1223, i.e., the active P-type doped structural layer 1210 of the third active region 1223, and the third oxide confinement layer 1243 is located above the P-type doped structural layer of the third active region 1223, i.e., the active P-type doped structural layer 1210 of the third active region 1223.

[0084] It should be understood that in other embodiments, the implementation may be as follows: the N-type doped structure layer of each active region 122 is located below the P-doped structure layer of the active region 122, at least a portion of the oxide confinement layer 124 is located above the active region 122, for example, the second oxide confinement layer 1242 is located above the second active region 1222, and / or the third oxide confinement layer 1443 is located above the third active region 1223.

[0085] The elemental content of the structural layers adjacent to the oxide confinement layer 124 affects the elemental content of the oxide confinement layer 124. The elemental content of the structural layers adjacent to the oxide confinement layer 124 needs to be configured according to requirements. In this embodiment, optionally, the P-doped structural layer adjacent to the oxide confinement layer 124 includes at least one AlGaAs material layer, and the aluminum content of the AlGaAs material layer of the P-doped structural layer adjacent to the oxide confinement layer 124 ranges from greater than or equal to 0.0 to less than or equal to 0.9; the N-doped structural layer adjacent to the oxide confinement layer 124 includes at least one AlGaAs material layer, and the aluminum content of the AlGaAs material layer of the N-doped structural layer adjacent to the oxide confinement layer 124 ranges from greater than or equal to 0.0 to less than or equal to 0.9. The aluminum content of the oxide confinement layer 124 ranges from greater than or equal to 0.9 to less than or equal to 1.0. It should be understood that the materials of the P-doped and N-doped structural layers adjacent to the oxide confinement layer 124 can be other material layers, that is, they may not be AlGaAs material layers.

[0086] It should be understood that the structural configuration scheme of the adjacent layers of the oxide confinement layer 124 in this application, namely, the structural configuration scheme in which at least one of the adjacent structural layers of the oxide confinement layer 124 is an N-type doped structural layer, has a particularly significant effect on the controllability of the structure of the oxide confinement layer 124 of the multi-junction VCSEL laser 1, and therefore is applicable to the multi-junction VCSEL laser 1; however, it is not only applicable to the multi-junction VCSEL laser 1, but also applicable to single-junction VCSEL lasers or VCSEL lasers without a tunnel junction. That is, the structural configuration scheme in which at least one of the adjacent structural layers of the oxide confinement layer 124 is an N-type doped structural layer is also applicable to single-junction VCSEL lasers or VCSEL lasers without a tunnel junction 123.

[0087] Accordingly, this application also proposes a VCSEL laser, comprising: an epitaxial structure 10, a first electrode 20, and a second electrode 30, wherein the first electrode 20 and the second electrode 30 are respectively connected to the epitaxial structure 10. The epitaxial structure 10 includes multiple structural layers. Specifically, the epitaxial structure 10 includes a substrate layer 11 and a VCSEL stacked structure 12. The VCSEL stacked structure 12 is stacked on the substrate layer 11. The VCSEL stacked structure 12 includes: a bottom DBR layer 121, a top DBR layer 125, at least one active region 122, and at least one oxide confinement layer 124, wherein the active region 122 and the oxide confinement layer 124 are stacked on top of each other and located between the bottom DBR layer 121 and the top DBR layer 125; each active region 122 includes at least one P-doped structural layer and at least one N-doped structural layer; the structural layer adjacent to the at least one oxide confinement layer 124 is an N-doped structural layer. The VCSEL laser described above differs from the multi-junction VCSEL laser 1 in that the number of tunnel junctions 123 is unlimited and can be 0, 1, 2, 3, or more.

[0088] Schematic method for manufacturing a multi-junction VCSEL laser: Accordingly, in the embodiments of this application, a method for manufacturing a multi-junction VCSEL laser is proposed. For example... Figure 7 As shown, it includes: S110, forming an epitaxial structure 10, the epitaxial structure 10 including a substrate layer 11 and a VCSEL stacked structure 12, the VCSEL stacked structure 12 being stacked on the substrate layer 11, the VCSEL stacked structure 12 including: a bottom DBR layer 121, a top DBR layer 125, at least two active regions 122, at least one tunnel junction 123, and at least one oxide confinement layer 124; the active regions 122, the tunnel junction 123, and the oxide confinement layer 124 are stacked on top of each other and located at the bottom. Between the DBR layer 121 and the top DBR layer 125; each active region 122 includes at least one P-doped structure layer, at least one N-doped structure layer and at least one quantum well 1230, the quantum well 1230 being located between the P-doped structure layer and the N-doped structure layer; the nearest structural layer to at least one oxide confinement layer 124 is an N-doped structure layer; and S120, forming a first electrode 20 and a second electrode 30, the first electrode 20 and the second electrode 30 being respectively connected to the epitaxial structure 10.

[0089] In step S110, an epitaxial structure 10 is formed. Specifically, the specific implementation of forming the epitaxial structure 10 is not limited to this application. In one embodiment of this application, firstly, a substrate layer 11 is provided.

[0090] Next, an epitaxial growth layer structure is formed by growing a bottom semiconductor alternating layer, at least one confinement layer, at least one tunnel junction layer, at least two active region layers, a top semiconductor alternating layer, and a top contact layer on the substrate layer 11 using an epitaxial growth process. The active region layers include at least one P-type doped structure layer and at least one N-type doped structure layer. The P-type doped structure layer of the active region layers includes at least one AlGaAs material layer, and the N-type doped structure layer of the active region 122 includes at least one AlGaAs material layer. Accordingly, the epitaxial growth layer structure includes a bottom semiconductor alternating layer, at least one confinement layer, at least two tunnel junction layers, at least one active region layer, a top semiconductor alternating layer, and a top contact layer stacked on the substrate layer 11. During the formation of the epitaxial growth layer structure, attention should be paid to the arrangement of each structural layer to ensure that the structural layer adjacent to at least one of the confinement layer formation layers is an N-type doped structural layer, thereby ensuring that the structural layer adjacent to at least one of the oxide confinement layers 124 formed subsequently is an N-type doped structural layer, thus improving the controllability of the structure of the oxide confinement layer 124.

[0091] Next, a VCSEL laser formation region is defined, and the portion outside the VCSEL laser formation region of the epitaxial growth layer structure is removed by an etching process, thereby dividing the epitaxial growth layer structure into multiple unit structures for forming multiple multi-junction VCSEL lasers 1. Specifically, each layer of the epitaxial growth layer structure (i.e., a bottom semiconductor alternating layer, at least one confinement layer, at least two tunnel junction layers, at least one active region layer, a top semiconductor alternating layer, and a top contact layer layer) is divided into multiple unit structures. Each unit structure includes: a bottom semiconductor alternating layer sub-unit region, a confinement layer sub-unit region, a tunnel junction layer sub-unit region, an active region layer sub-unit region, a top semiconductor alternating layer sub-unit region, and a top contact layer layer sub-unit region.

[0092] The unit structure is oxidized to form an oxidized confinement layer 124, specifically, the confinement layer forming sub-unit region of each unit structure. The portion of the confinement layer forming sub-unit region near the outer edge of the unit structure is oxidized to form a confinement region; the portion near the center of the unit structure remains unoxidized, forming a confinement hole within the confinement region. During the oxidation of the confinement layer forming layer, one or more of nitrogen, hydrogen, air, and water vapor are introduced into the confinement layer forming layer. The reaction temperature is greater than or equal to 200°C and less than or equal to 500°C, and the reaction time is greater than or equal to 30 seconds and less than or equal to 30 minutes. Thus, each oxidized unit structure and the substrate layer 11 form the epitaxial structure 10, wherein the bottom semiconductor alternating layer sub-unit region forms the bottom DBR layer 121, the confinement layer forming layer sub-unit region forms an oxide confinement layer 124 with confinement holes, the tunnel junction forming layer sub-unit region forms a tunnel junction 123, the active region forming layer sub-unit region forms the active region 122, the top semiconductor alternating layer sub-unit region forms a top DBR layer 125, and the top contact layer forming layer sub-unit region forms a top electrode contact layer 126. In this embodiment, the substrate layer 11 can be thinned.

[0093] In step S120, a first electrode 20 and a second electrode 30 are formed. Specifically, metal is plated on the top electrode contact layer 126, and the metal plated on the top electrode contact layer 126 forms the first electrode 20. Metal is plated on the lower surface of the substrate layer 11 or at other locations, such as the bottom DBR layer 121, and the metal plated on the lower surface of the substrate layer 11 or at other locations forms the second electrode 30.

[0094] It is worth mentioning that the multi-junction VCSEL laser 1 structural design provided in this application mainly adjusts the doping type of individual structural layers of the VCSEL laser compared to the traditional VCSEL laser structural design, making the modification relatively simple. In other words, this application can significantly improve the controllability of the oxidation length or oxidation depth of the oxide confinement layer 124 through relatively simple modifications to the traditional VCSEL laser structure. Correspondingly, the multi-junction VCSEL laser 1 of this application can utilize existing VCSEL laser production lines and equipment during manufacturing, effectively reducing the production cost of the multi-junction VCSEL laser 1.

[0095] In summary, the VCSEL multi-junction VCSEL laser 1, its stacked structure 12, and manufacturing method based on the embodiments of this application have been clarified. The multi-junction VCSEL laser 1 provides a novel multi-junction VCSEL laser structure design scheme, which can improve the controllability of the oxidation length or oxidation depth of the oxidation confinement layer 124, so that the actual oxidation length or oxidation depth of the oxidation confinement layer 124 is as close as possible to the expected oxidation length or oxidation depth.

[0096] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

Claims

1. A VCSEL stacked structure, characterized in that, include: A bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; The active region, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; Each active region includes at least one P-doped structural layer, at least one N-doped structural layer, and at least one quantum well, wherein the quantum well is located between the P-doped structural layer and the N-doped structural layer; the structural layer adjacent to the at least one oxide confinement layer is the N-doped structural layer of the active region.

2. The VCSEL stacking structure according to claim 1, wherein, The nearest structural layer to each of the aforementioned oxide confinement layers is an N-type doped structural layer.

3. The VCSEL stacking structure according to claim 2, wherein, Each of the active regions has an N-type doped structure layer located above the P-doped structure layer of the active region, and each of the oxidation confinement layers is located above the adjacent active region.

4. The VCSEL stacking structure according to claim 2, wherein, Each of the active regions has an N-type doped structure layer located below the P-doped structure layer of the active region, and each of the oxidation confinement layers is located below the adjacent active region.

5. The VCSEL stacking structure according to claim 1, wherein, The VCSEL stacked structure includes multiple oxide confinement layers, and only some of the oxide confinement layers have an N-type doped structure layer as their nearest neighbor.

6. The VCSEL stacking structure according to claim 5, wherein, Each of the active regions has an N-type doped structure layer located above the P-doped structure layer of the active region, and only a portion of the oxide confinement layer is located above the active region.

7. The VCSEL stacking structure according to claim 5, wherein, Each of the active regions has an N-type doped structure layer located below the P-doped structure layer of the active region, and only a portion of the oxide confinement layer is located below the active region.

8. The VCSEL stacking structure according to claim 1, wherein, The P-doped structural layer adjacent to the oxide confinement layer includes at least one AlGaAs material layer, and the aluminum content of the AlGaAs material layer of the P-doped structural layer adjacent to the oxide confinement layer is greater than or equal to 0.0 and less than or equal to 0.9; the N-doped structural layer adjacent to the oxide confinement layer includes at least one AlGaAs material layer, and the aluminum content of the AlGaAs material layer of the N-doped structural layer adjacent to the oxide confinement layer is greater than or equal to 0.0 and less than or equal to 0.

9.

9. The VCSEL stacking structure according to claim 1, wherein, The aluminum content of the oxide confinement layer is greater than or equal to 0.9 and less than or equal to 1.

0.

10. A multi-junction VCSEL laser, characterized in that, include: An epitaxial structure is provided, comprising a substrate layer and a VCSEL stacked structure, wherein the VCSEL stacked structure is stacked on the substrate layer, and the VCSEL stacked structure includes: a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; each active region includes at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, wherein the quantum well is located between the P-doped structure layer and the N-doped structure layer; the structure layer adjacent to the at least one oxide confinement layer is the N-doped structure layer of the active region; A first electrode, the first electrode being connected to the epitaxial structure; and The second electrode is connected to the epitaxial structure.

11. A method for manufacturing a multi-junction VCSEL laser, characterized in that, include: An epitaxial structure is formed, comprising a substrate layer and a VCSEL stacked structure, wherein the VCSEL stacked structure is stacked on the substrate layer, and the VCSEL stacked structure includes: a bottom DBR layer, a top DBR layer, at least two active regions, at least one tunnel junction, and at least one oxide confinement layer; the active regions, the tunnel junction, and the oxide confinement layer are stacked on top of each other and located between the bottom DBR layer and the top DBR layer; each active region includes at least one P-doped structure layer, at least one N-doped structure layer, and at least one quantum well, wherein the quantum well is located between the P-doped structure layer and the N-doped structure layer; the structure layer adjacent to the at least one oxide confinement layer is the N-doped structure layer of the active region; and A first electrode and a second electrode are formed, and the first electrode and the second electrode are respectively connected to the epitaxial structure.

12. The method for manufacturing a multi-junction VCSEL laser according to claim 11, wherein, Forming an epitaxial structure includes: oxidizing a confinement layer to form the oxidized confinement layer; and during the oxidation of the confinement layer, introducing one or more of nitrogen, hydrogen, air, and water vapor into the confinement layer.

13. The method for manufacturing a multi-junction VCSEL laser according to claim 12, wherein, During the oxidation of the confinement layer, the reaction temperature is greater than or equal to 200 °C and less than or equal to 500 °C.

14. The method for manufacturing a multi-junction VCSEL laser according to claim 13, wherein, During the oxidation of the confinement layer, the reaction time is greater than or equal to 30 s and less than or equal to 30 min.

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