A terahertz module index consistency rapid debugging device

CN117856926BActive Publication Date: 2026-08-11BRAINWARE TERAHERTZ INFORMATION TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-12-14
Publication Date
2026-08-11

AI Technical Summary

Technical Problem

[0003]芯片增益波动过大是限制太赫兹模块性能指标的主要因素之一,常规太赫兹芯片的增益范围往往很大,从21dB~27dB不等,而且微组装工艺的影响,芯片拼接缝隙也无法控制,导致太赫兹模块最终性能指标变化很大,一致性较差,为此,提出一种太赫兹模块指标一致性的快速精准调试方法

Benefits of technology

[0015] Compared with the prior art, the present invention has the following advantages: The present invention changes the conventional interconnection form of the high-frequency transmission channel, and achieves the effect of controlling the chip gain attenuation by controlling the gap width between the low noise amplifier chip and the detector chip. Furthermore, the consistency of the final output voltage is ensured by precisely adjusting the resistance value of the amplification and adjustment resistor, which fully meets the control requirements of the terahertz module and is worthy of application and promotion.

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Abstract

This invention discloses a rapid debugging device for terahertz module performance consistency, comprising a probe for receiving radiation or scattering signals from a target under test; a low-noise amplifier chip for amplifying the signals received by the probe; a detector chip for converting the received signals into DC analog signals; an AD8222 chip for converting the DC analog signals into digital signals; and series-connected debugging resistors R1 and R2 for debugging the voltage of the converted digital signal, which are connected to the AD8222 chip. This invention controls the gain attenuation of the chips by controlling the gap width between the low-noise amplifier chip and the detector chip, and ensures the consistency of the final output voltage by precisely adjusting the resistance values ​​of the amplification and debugging resistors, thus fully meeting the control requirements of terahertz modules and is worthy of widespread application.
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Description

Technical Field

[0001] This invention relates to the field of terahertz module debugging technology, specifically to a rapid debugging device for terahertz module performance consistency. Background Technology

[0002] In recent years, the terahertz frequency band has been increasingly widely used in security inspection, non-destructive testing, and other fields, leading to rapid development in the research of core modules for terahertz systems. The performance of a terahertz module mainly depends on the internal matching of the chip.

[0003] Excessive fluctuations in chip gain are one of the main factors limiting the performance of terahertz modules. Conventional terahertz chips often have a wide gain range, from 21dB to 27dB. Moreover, due to the influence of micro-assembly processes, the chip splicing gaps cannot be controlled, resulting in significant variations in the final performance indicators of terahertz modules and poor consistency. To address this, a rapid and accurate debugging method for ensuring the consistency of terahertz module indicators is proposed. Summary of the Invention

[0004] The technical problem to be solved by this invention is: how to ensure the gain consistency of each channel component of a terahertz module, and provides a rapid debugging device for the consistency of terahertz module indicators.

[0005] The present invention solves the above-mentioned technical problems through the following technical solution: the present invention includes a probe for receiving radiation or scattering signals from a target under test.

[0006] A low-noise amplifier chip is used to amplify the signal received by the probe.

[0007] A detector chip is used to convert received signals into DC analog signals.

[0008] The AD8222 chip is used to convert DC analog signals into digital signals;

[0009] The series-connected debugging resistors R1 and R2 are used to debug the voltage of the converted digital signal. The series-connected debugging resistors R1 and R2 are connected to the AD8222 chip.

[0010] A gap is provided between the low-noise amplifier chip and the detector chip for adjusting the transmission gain.

[0011] When the gain of the low-noise amplifier chip is greater than 25dB, the gap width between the low-noise amplifier chip and the detector chip is 500μm.

[0012] When the gain of the low-noise amplifier chip is greater than 23dB and less than or equal to 25dB, the gap width between the low-noise amplifier chip and the detector chip is 250μm.

[0013] When the gain of the low-noise amplifier chip is less than or equal to 23dB, the gap width between the low-noise amplifier chip and the detector chip is less than or equal to 50μm.

[0014] According to microwave theory, when the gap width between chips on a transmission line increases, the energy of the microwave signal in the transmission line is more easily radiated into the surrounding space, which can reduce the gain on the transmission line. By selecting an appropriate gap width, gain adjustment can be achieved while impedance matching of the transmission line can also be achieved.

[0015] Compared with the prior art, the present invention has the following advantages: The present invention changes the conventional interconnection form of the high-frequency transmission channel, and achieves the effect of controlling the chip gain attenuation by controlling the gap width between the low noise amplifier chip and the detector chip. Furthermore, the consistency of the final output voltage is ensured by precisely adjusting the resistance value of the amplification and adjustment resistor, which fully meets the control requirements of the terahertz module and is worthy of application and promotion. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the working principle of the present invention;

[0017] Figure 2 This is the debugging schematic diagram of Example 1;

[0018] Figure 3 This is the debugging schematic diagram of Example 2;

[0019] Figure 4 This is the debugging principle diagram of Example 3. Detailed Implementation

[0020] The embodiments of the present invention are described in detail below. These embodiments are implemented based on the technical solution of the present invention, and provide detailed implementation methods and specific operation processes. However, the scope of protection of the present invention is not limited to the following embodiments.

[0021] Example 1

[0022] like Figure 1 As shown, this embodiment includes a probe for receiving radiation or scattering signals from the target under test.

[0023] A low-noise amplifier chip is used to amplify the signal received by the probe. In this embodiment, the low-noise amplifier chip is model YLN16-075110C1.

[0024] The detector chip is used to convert the received signal into a DC analog signal. In this embodiment, the detector chip model is YDD01-080110C1. There is a gap of a certain width between the low-noise amplifier chip and the detector chip for adjusting the transmission gain.

[0025] The AD8222 chip is used to convert DC analog signals into digital signals;

[0026] The series-connected debugging resistors R1 and R2 are used to debug the voltage of the converted digital signal. The series-connected debugging resistors R1 and R2 are connected to the AD8222 chip.

[0027] The working principle of the terahertz module is as follows: it passively receives external signals, amplifies them through a low-noise amplifier chip and outputs them through a detector chip, and then converts them into digital signals through an AD82222 chip.

[0028] like Figure 2 As shown, when the gain of the low noise amplifier chip is >25dB, the gap width between the low noise amplifier chip and the detector chip should be 500μm when assembling them.

[0029] Example 2

[0030] like Figure 3 As shown, when the gain of the low-noise amplifier chip is greater than 23dB and less than or equal to 25dB, the gap width between the low-noise amplifier chip and the detector chip is 250μm. Other implementation methods are the same as in Example 1.

[0031] Example 3

[0032] like Figure 4 As shown, when the gain of the low-noise amplifier chip is less than or equal to 23dB, the gap width between the low-noise amplifier chip and the detector chip is less than or equal to 50μm.

[0033] After assembly, test the actual output voltage V of the terahertz module. If V does not meet the actual usage requirements, it can be precisely adjusted through R1 and R2. Replace R1 and R2 with RX1 and RX2. The required voltage VX and the actual voltage V can be converted by V / (R1+R2)=VX / (RX1+RX2).

[0034] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A rapid debugging device for terahertz module performance consistency, characterized in that: Includes a probe used to receive radiation or scattered signals from the target under test; A low-noise amplifier chip is used to amplify the signal received by the probe; A detector chip is used to convert received signals into DC analog signals. The AD8222 chip is used to convert DC analog signals into digital signals; The series-connected debugging resistors R1 and R2 are used to debug the voltage of the converted digital signal. The series-connected debugging resistors R1 and R2 are connected to the AD8222 chip. A gap is provided between the low-noise amplifier chip and the detector chip for adjusting the transmission gain.

2. The terahertz module performance consistency rapid debugging device according to claim 1, characterized in that: When the gain of the low-noise amplifier chip is greater than 25dB, the gap width between the low-noise amplifier chip and the detector chip is 500μm.

3. The terahertz module performance consistency rapid debugging device according to claim 1, characterized in that: When the gain of the low-noise amplifier chip is greater than 23dB and less than or equal to 25dB, the gap width between the low-noise amplifier chip and the detector chip is 250μm.

4. The terahertz module performance consistency rapid debugging device according to claim 1, characterized in that: When the gain of the low-noise amplifier chip is less than or equal to 23dB, the gap width between the low-noise amplifier chip and the detector chip is less than or equal to 50μm.

Citation Information

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