一种微米多孔硅及其制备方法
By controlling the ratio of plating metal and etching solution and the stirring process, micron-sized porous silicon with a uniformity of over 90% was prepared, solving the problem of poor uniformity in existing micron-sized porous silicon. This achieved efficient preparation of micron-sized porous silicon with adjustable pore size, which is suitable for applications of porous silicon in adsorption, separation, sensing, catalysis, energy storage and other fields.
CN117865159BActive Publication Date: 2026-07-17SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SICHUAN UNIVERSITY OF SCIENCE AND ENGINEERING
- Filing Date
- 2024-02-29
- Publication Date
- 2026-07-17
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Figure CN117865159B_ABST
Abstract
本发明公开了一种微米多孔硅及其制备方法，其制备方法具体包括以下步骤：（1）预处理：将粒径为10~15μm的金属硅粉依次采用氢氟酸和乙醇的混合溶液、盐酸和乙醇的混合溶液、水清洗；（2）表面金属镀：将预处理后的金属硅粉加入镀金属溶液中，并搅拌一段时间，然后用水进行清洗；所述镀金属溶液为金属盐、乙醇、氢氟酸和水的混合溶液；（3）刻蚀：将金属镀后的金属硅粉加入刻蚀溶液中，并搅拌一段时间，然后用水进行清洗；所述刻蚀溶液为双氧水、氢氟酸和乙醇的混合溶液；（4）干燥：对刻蚀后的金属硅粉进行干燥，即得到所述微米多孔硅。本发明制得的微米多孔硅具有良好的均匀性，其均匀性在90%以上。
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