A silicon wafer substrate transport system and method for reducing wafer bow

Abstract

The application discloses a silicon wafer substrate conveying system and method for reducing wafer warping, and relates to the technical field of silicon wafer substrate conveying devices. The silicon wafer substrate conveying system for reducing wafer warping is characterized in that two preheating chambers are symmetrically arranged on the periphery of a process chamber, so that the silicon wafer substrate can be preheated before entering the process chamber. The preheating process is slow, that is, the temperature gradually rises from room temperature to the same temperature as that in the process chamber. Compared with the traditional technology of directly gradually sending the silicon wafer substrate from room temperature to the high-temperature process chamber, the silicon wafer substrate can gradually rise in temperature in the preheating chamber, and the condition that one side of the silicon wafer substrate is in contact with high temperature and the other side is still at low temperature does not occur, so that the problem that the traditional silicon wafer substrate is prone to warping when conveyed into the process chamber is solved.

Description

Technical Field

[0001] This invention relates to the field of silicon wafer substrate transport device technology, specifically to a silicon wafer substrate transport system and method for reducing silicon wafer warpage. Background Technology

[0002] Epitaxial layer formation is a step in the wafer manufacturing process, specifically forming an epitaxial layer on the surface of a silicon substrate. The most common method for forming an epitaxial layer is through atmospheric pressure epitaxial deposition. Since an epitaxial layer needs to be formed on the surface of the silicon substrate, the flatness of the silicon substrate is very important. Existing epitaxial deposition equipment is usually a process chamber with a temperature of 600 degrees Celsius. The silicon substrate needs to be sent into the process chamber for deposition. However, the silicon substrate enters directly, with part of it first coming into contact with the high temperature and the rest remaining on the outside of the process chamber. This continuous entry into the process chamber can easily cause the silicon substrate to warp due to temperature differences.

[0003] Patent document CN114188258A discloses a silicon wafer substrate transport device and method for improving epitaxial wafer flatness. The transport device is arranged in the process chamber of an epitaxial deposition apparatus. The device includes: a heating module configured to radiate heat to the silicon wafer at different heating powers as the wafer moves from outside the process chamber to a processing position within the chamber; and a transport module configured to transport the silicon wafer to the processing position at different speeds according to its position after it enters the process chamber. By adjusting the speed of the substrate silicon wafer at various positions using the transport module and by adjusting the power ratio of the heating lamps at each stage during the wafer's entry into the process chamber using the heating module, the impact of temperature differences on the quality of the epitaxial wafer is reduced.

[0004] As described in the aforementioned patent documents, the prior art addresses the method of silicon wafer substrates entering the process chamber. In order to solve the problem of silicon wafer substrate warping that is prone to occur in traditional transfer methods, the heating module in the process chamber is configured to ensure that its temperature can adapt to the entry of the silicon wafer, and the temperature is controlled in a matching manner. However, no matter how the temperature is controlled, it cannot change the fact that part of the silicon wafer enters the process chamber first, and the rest enters later. Although the aforementioned prior art can solve the problem of the silicon wafer substrate being cupped and warped, the temperature difference between one side of the silicon wafer substrate entering the high-temperature environment first and the other side entering the high-temperature environment later still easily leads to a U-shaped warping of the entire silicon wafer substrate when viewed from the side.

[0005] Therefore, it is necessary to provide a silicon substrate transfer system and method to reduce silicon wafer warpage and solve the above-mentioned technical problems. Summary of the Invention

[0006] (a) Technical problems to be solved

[0007] To address the aforementioned technical problems, this invention provides a silicon wafer substrate transfer system and method for reducing silicon wafer warpage.

[0008] (II) Technical Solution

[0009] To achieve the above objectives, the present invention provides the following technical solution: a silicon wafer substrate transfer system for reducing silicon wafer warpage, comprising a base, a process chamber rotatably mounted on the top of the base, wherein the silicon wafer substrate undergoes processing within the process chamber, two preheating chambers symmetrically connected on the circumferential outer wall of the process chamber, and sealing assemblies slidably mounted on the inner walls of the open ends of each preheating chamber, the sealing assemblies sealing the preheating chambers after the silicon wafer substrate is loaded into them for preheating, and air inlets opening on the two opposite vertical sidewalls of each preheating chamber, and a synchronous heat dissipation mechanism fixed on the outer wall of the preheating chamber corresponding to the positions of the air inlets. The synchronous heat dissipation mechanism includes an air inlet duct fixed to the outer wall of the preheating chamber for air supply. A sealing component and an air intake component are respectively installed at one end of the air inlet duct near the air inlet and the other end away from the air inlet. The sealing component is used to connect the air inlet and the air inlet duct and to seal the air inlet. The air intake component is used to ventilate the preheating chamber while the process chamber rotates. A rotating component for driving the process chamber to rotate is installed on the inner wall of the base. Guide rail assemblies for carrying and transferring silicon wafer substrates are installed on the inner walls of both the process chamber and the preheating chamber. A transfer component for pushing the silicon wafer substrates to move between the process chamber and the preheating chamber is also installed on the sealing component.

[0010] Preferably, the sealing assembly consists of a sealing plate slidably mounted on the inner wall of the preheating chamber and a first electric push rod whose protruding end is fixed to the top surface of the sealing plate. One first electric push rod on the side away from the process chamber is fixed to the top surface of the preheating chamber, and the protruding end of the first electric push rod is slidably connected to the top side wall of the preheating chamber through a first sliding hole. Another first electric push rod on the side close to the process chamber is fixed to the top surface of the process chamber, and the protruding end of the first electric push rod is slidably connected to the top side wall of the process chamber and the top side wall of the preheating chamber through a second sliding hole, respectively.

[0011] Preferably, the preheating chamber includes two first heating modules fixed to its inner wall, and the process chamber includes second heating modules fixed to its upper and lower inner walls respectively.

[0012] Preferably, the air inlet pipe consists of a bent pipe body and a connecting frame fixed to the outer wall of the bent pipe body near the preheating chamber. The connecting frame is fixed to the outer wall of the preheating chamber, and the two ends of the bent pipe body are perpendicular to the outer wall of the preheating chamber and the top surface of the base, respectively.

[0013] Preferably, the sealing assembly includes a movable plate slidably connected between the inner wall of the connecting frame and the outer wall of the preheating chamber. The lower end of the movable plate has a through hole, and the upper end of the movable plate is fixed with a connecting strip. The end of the connecting strip away from the movable plate is fixed to the outer wall of a sealing plate on the preheating chamber near the movable plate.

[0014] Preferably, the air intake assembly includes a support plate fixed to the inner wall of the bent pipe body at the end away from the connecting frame. A rotating shaft is rotatably connected to the middle of the support plate via a bearing. An impeller is fixed to the upper end of the rotating shaft, and the lower end of the rotating shaft is connected to the output end of the speed increaser. The speed increaser is fixed to the support plate, and a gear is fixed to the input end of the speed increaser. A gear ring is fixed to the top of the base, and the gear meshes with the gear ring.

[0015] Preferably, the rotating assembly includes a rotating rod rotatably connected to the middle of the base via a bearing. The upper end of the rotating rod is fixed to the middle of the bottom surface of the process chamber, and a worm gear is fixed to the lower end of the rotating rod. A worm is rotatably connected to the inner wall of the base via a bearing, and the worm meshes with the worm gear. A motor is also fixed to the inner wall of the base, and one end of the worm is fixed to the output end of the motor.

[0016] Preferably, the guide rail assembly includes slide rails symmetrically fixed to the bottom inner wall of the preheating chamber and the bottom inner wall of the process chamber, respectively, with the guide rail inside the preheating chamber facing the slide rail inside the process chamber. The outer walls of the two slide rails inside the preheating chamber are slidably mounted with a support frame, and the top of the support frame has an annular groove for placing a silicon wafer substrate.

[0017] Preferably, the conveying assembly includes a second electric push rod fixed to the lower end of a sealing plate on the side away from the process chamber. The extended end of the second electric push rod is slidably connected to the sealing plate through a third sliding hole. The extended end of the second electric push rod extends through the third sliding hole to the inner side of the preheating chamber and is fixed with a first AlNiCo magnet. A second AlNiCo magnet is fixed on the side of the support frame close to the first AlNiCo magnet, and the first AlNiCo magnet is directly opposite the second AlNiCo magnet.

[0018] The present invention also provides a method for using a silicon substrate transport system to reduce silicon wafer warpage, which is the method of using the aforementioned silicon substrate transport system to reduce silicon wafer warpage, specifically including the following steps:

[0019] S1. Load the silicon wafer substrate into the inner side of the annular groove on the support frame at the feeding end, and put the support frame into the slide rail in the preheating chamber. Push the support frame into the innermost part of the preheating chamber to complete the silicon wafer substrate feeding work.

[0020] S2. Turn on the first heating module to preheat the silicon substrate in the preheating chamber;

[0021] S3. After preheating, open a sealing plate near the process chamber and push the support frame into the process chamber. At the same time, drive the rotating component to rotate the process chamber 180 degrees. During and after the rotation, the epitaxial layer deposition work continues inside the process chamber. The deposition process is heated by the second heating module.

[0022] S4. The deposition end drive conveyor assembly pulls the carrier out into the preheating chamber, lowers a sealing plate near the process chamber to separate the preheating chamber from the process chamber, and raises a sealing plate away from the process chamber to open the preheating chamber.

[0023] S5. Drive the rotating component to rotate the process chamber 180 degrees again, so that the finished silicon wafer substrate rotates to the loading and unloading end. During the process, the finished silicon wafer substrate is cooled by the air intake component. When it reaches the loading and unloading end, the finished product is unloaded.

[0024] S6. After the process chamber stops rotating in step S3, the above steps are repeated in a preheating chamber near the loading and unloading end. The two preheating chambers alternately repeat the above steps.

[0025] (III) Beneficial Effects

[0026] This invention provides a silicon substrate transfer system and method for reducing silicon wafer warpage. Compared with the prior art, it has the following advantages:

[0027] 1. The silicon wafer substrate conveying system for reducing silicon wafer warpage provided by this invention symmetrically sets two preheating chambers around the process chamber, allowing the silicon wafer substrate to be preheated before entering the process chamber. The preheating process is carried out slowly, that is, the temperature gradually rises from room temperature to the same temperature as the process chamber. Compared with the traditional technology of directly sending the silicon wafer substrate from room temperature to the high temperature process chamber, the silicon wafer substrate can be gradually heated in the preheating chamber, and the situation of one side of the silicon wafer being exposed to high temperature while the other side is still at low temperature will not occur. Therefore, in addition to solving the problem of warpage that easily occurs when the silicon wafer is deposited at the bottom and transported into the process chamber, by setting two preheating chambers, during the epitaxial layer deposition work of the silicon wafer substrate in one preheating chamber, the unloading work of the silicon wafer substrate that has completed epitaxial layer deposition and the loading and preheating work of the new silicon wafer substrate can be carried out in the other preheating chamber, which ensures work efficiency.

[0028] 2. The silicon substrate conveying system for reducing silicon wafer warpage provided by this invention installs an air inlet and a synchronous heat dissipation mechanism on the preheating chamber. This allows the silicon substrate in the preheating chamber to be connected to the external environment and the air inlet to be opened after the epitaxial layer production work is completed and the process chamber rotates, causing the preheating chamber to rotate towards the loading and unloading end. At the same time, air at the same temperature as the room temperature can be introduced into the preheating chamber, thereby accelerating the cooling of the guide rail assembly and the silicon substrate in the preheating chamber. Furthermore, the mechanical linkage between the synchronous heat dissipation mechanism and the rotation of the process chamber ensures that the timing of the synchronous heat dissipation mechanism is more accurate, and the delay in heat dissipation is greatly reduced. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0030] Figure 2 This is a schematic diagram of the air inlet duct structure of the present invention;

[0031] Figure 3 This is a schematic diagram of the air intake assembly structure of the present invention;

[0032] Figure 4 This is a schematic diagram of the closed component structure of the present invention;

[0033] Figure 5 This is a schematic diagram of the guide rail assembly structure of the present invention;

[0034] Figure 6 This is a schematic diagram showing the position of the second AlNiCo magnet of the present invention;

[0035] Figure 7 This is a schematic diagram of the rotating component structure of the present invention;

[0036] Figure 8 This is one of the schematic diagrams of the internal structure of the process room of the present invention;

[0037] Figure 9 This is the second schematic diagram of the internal structure of the process room of the present invention.

[0038] The diagram shows the following components: 1. Base; 2. Process chamber; 3. Preheating chamber; 301. Air inlet; 4. Sealing assembly; 41. Sealing plate; 42. First electric push rod; 5. Synchronous heat dissipation mechanism; 6. Air inlet pipe; 61. Bend; 62. Connecting frame; 7. Sealing assembly; 71. Movable plate; 72. Through hole; 73. Connecting strip; 8. Air inlet assembly; 81. Support plate; 82. Rotating shaft; 83. Impeller; 84. Speed ​​increaser; 85. Gear; 86. Gear ring; 9. Rotating assembly; 91. Rotating rod; 92. Worm gear; 93. Worm; 94. Motor; 10. Guide rail assembly; 101. Slide rail; 102. Bearing frame; 1021. Annular groove; 11. Conveying assembly; 111. Second electric push rod; 112. First AlNiCo magnet; 113. Second AlNiCo magnet; 12. First heating module; 13. Second heating module. Detailed Implementation

[0039] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0040] Please see Figures 1 to 9 This invention provides a technical solution: a silicon wafer substrate transfer system for reducing silicon wafer warpage, comprising a base 1, a process chamber 2 rotatably mounted on the top of the base 1, wherein the silicon wafer substrate is processed within the process chamber 2, and two preheating chambers 3 are symmetrically connected on the circumferential outer wall of the process chamber 2. The preheating chamber 3 includes two first heating modules 12 fixed on its inner wall, and the process chamber 2 includes second heating modules 13 fixed on its upper and lower inner walls respectively. The heating of the silicon wafer substrate is performed through the first heating modules 12 and the second heating modules 13. The two first heating modules 12 in the preheating chamber 3 heat the silicon wafer substrate on both the upper and lower sides, while the two second heating modules 13 in the process chamber 2 also heat the silicon wafer substrate on both the upper and lower sides.

[0041] It should be noted that by setting two preheating chambers 3 around the process chamber 2, the silicon wafer substrate can be preheated as a whole before entering the process chamber 2. The preheating in the preheating chamber 3 starts from room temperature and slowly rises. The silicon wafer substrate is heated synchronously as a whole in the preheating chamber 3. Compared with the traditional technology of directly sending the silicon wafer substrate at room temperature into the process chamber 2, this avoids the occurrence of large temperature differences between different parts of the silicon wafer substrate during the process chamber 2, thereby effectively reducing the probability of warping of the silicon wafer substrate.

[0042] Both ends of the preheating chamber 3 have slidably installed sealing components 4 on their inner walls. The sealing components 4 seal the preheating chamber 3 after the silicon wafer substrate is loaded into it for preheating. The sealing components 4 consist of a sealing plate 41 slidably installed on the inner wall of the preheating chamber 3 and a first electric push rod 42 whose protruding end is fixed to the top surface of the sealing plate 41. One first electric push rod 42 on the side away from the process chamber 2 is fixed to the top surface of the preheating chamber 3, and the protruding end of the first electric push rod 42 is slidably connected to the top side wall of the preheating chamber 3 through a first sliding hole. The other first electric push rod 42 on the side closer to the process chamber 2 is fixed to the top surface of the process chamber 2, and the protruding end of the first electric push rod 42 is slidably connected to the top side wall of the process chamber 2 and the top side wall of the preheating chamber 3 through a second sliding hole.

[0043] It should be noted that during the loading of the silicon wafer substrate, a first electric push rod 42 on the side away from the process chamber 2 is driven to retract, and the sealing plate 41 on that side rises, connecting the preheating chamber 3 with the external environment. Then, the silicon wafer substrate is placed in. Subsequently, the first electric push rod 42 on the side away from the process chamber 2 is driven to extend, and the sealing plate 41 on that side descends, closing the preheating chamber 3 for preheating. After preheating, when the silicon wafer substrate needs to be sent into the process chamber 2, a first electric push rod 42 on the side close to the process chamber 2 is driven to retract, and the sealing plate 41 on that side rises, connecting the preheating chamber 3 with the process chamber 2. The silicon wafer substrate is then sent into the process chamber 2 for epitaxial layer deposition. After the process is completed and the silicon wafer substrate returns to the preheating chamber 3, a first electric push rod 42 on the side close to the process chamber 2 extends again to separate the process chamber 2 from the preheating chamber 3.

[0044] Air inlets 301 are provided on the two vertical side walls opposite to each other in the preheating chamber 3. A synchronous heat dissipation mechanism 5 is fixed on the outer wall of the preheating chamber 3 at the position corresponding to the air inlets 301. The synchronous heat dissipation mechanism 5 includes an air inlet pipe 6 fixed to the outer wall of the preheating chamber 3 for air supply. A sealing component 7 and an air inlet component 8 are respectively installed at one end of the air inlet pipe 6 near the air inlet 301 and the other end away from the air inlet 301. The sealing component 7 is used to connect the air inlet 301 and the air inlet pipe 6 and to seal the air inlet 301. The air inlet component 8 is used to ventilate the preheating chamber 3 while the process chamber 2 is rotating.

[0045] It should be noted that after the silicon wafer substrate epitaxial layer deposition is completed and it returns to the preheating chamber 3, a sealing plate 41 near the process chamber 2 descends to separate the preheating chamber 3 from the process chamber 2, while a sealing plate 41 away from the process chamber 2 rises to open the preheating chamber 3. At the same time, the sealing component 7 connects the air inlet pipe 6 and the air inlet 301. During the silicon wafer substrate preheating and epitaxial layer deposition operations, the sealing component 7 is in the state of closing the air inlet 301. After connecting the air inlet pipe 6 and the air inlet 301, the process chamber 2 is rotated to turn the preheating chamber 3, which is loaded with the finished silicon wafer substrate, toward the loading and unloading end. During this process, the air inlet component 8 simultaneously introduces room temperature air into the air inlet pipe 6, so that the air blows into the preheating chamber 3 to accelerate the cooling and heat dissipation of the silicon wafer substrate until it reaches the loading and unloading end. After the loading and unloading is completed, a sealing plate 41 away from the process chamber 2 descends again to close the preheating chamber 3, and at the same time, the sealing component 7 closes the air inlet 301 again.

[0046] The inner wall of the base 1 is equipped with a rotating assembly 9 for driving the process chamber 2 to rotate. The rotating assembly 9 includes a rotating rod 91 rotatably connected to the middle of the base 1 via a bearing. The upper end of the rotating rod 91 is fixed to the middle of the bottom surface of the process chamber 2. The lower end of the rotating rod 91 is fixed with a worm gear 92. The inner wall of the base 1 is rotatably connected to a worm 93 via a bearing. The worm 93 is meshed with the worm gear 92. The inner wall of the base 1 is also fixed with a motor 94. One end of the worm 93 is fixed to the output end of the motor 94.

[0047] It should be noted that when the rotating component 9 is working, the drive motor 94 rotates to drive the worm gear 93 to rotate, which in turn drives the worm wheel 92 to rotate, thereby enabling the rotating rod 91 to rotate, which in turn drives the process chamber 2 to rotate. Each time the process chamber 2 rotates from rotation to stop, it rotates 180 degrees.

[0048] It should be further explained that the specific steps for loading, preheating, epitaxial layer deposition, cooling, and unloading of the silicon wafer substrate are as follows:

[0049] 1) Silicon wafer substrates are loaded into a preheating chamber 3 near the loading and unloading end. Then the preheating chamber 3 is closed and isolated from the process chamber 2. The temperature of the preheating chamber 3 is increased to carry out preheating work.

[0050] 2) Once the preheating reaches the required temperature, connect the preheating chamber 3 to the process chamber 2, and simultaneously drive the process chamber 2 to rotate slowly. During this process, after the silicon wafer substrate enters the process chamber 2, the epitaxial layer deposition process is carried out.

[0051] 3) Until the process chamber 2 stops rotating after rotating 180 degrees, the preheating chamber 3 containing the silicon wafer substrate rotates to the side of the process chamber 2 away from the loading and unloading end, and continues to carry out epitaxial layer deposition for a period of time. The preheating chamber 3 near the loading and unloading end is opened to connect with the external environment, so that new silicon wafer substrates can be loaded and preheated.

[0052] 4) After the deposition is completed and the preheating of the newly loaded silicon wafer substrate is completed, open the preheating chamber 3 on the side away from the loading and unloading end, and open the air inlet 301 at the same time. Then continue to drive the process chamber 2 to rotate 180 degrees. During the rotation, the finished silicon wafer substrate is cooled by the synchronous heat dissipation mechanism 5 until it is rotated to the side close to the loading and unloading end. Unload the finished silicon wafer substrate and then continue to repeat the above operation.

[0053] The air inlet duct 6 consists of a bent pipe body 61 and a connecting frame 62 fixed to the outer wall of the bent pipe body 61 near the preheating chamber 3. The connecting frame 62 is fixed to the outer wall of the preheating chamber 3. The two ends of the bent pipe body 61 are perpendicular to the outer wall of the preheating chamber 3 and the top surface of the base 1, respectively. The sealing assembly 7 includes a movable plate 71 slidably connected between the inner wall of the connecting frame 62 and the outer wall of the preheating chamber 3. The lower end of the movable plate 71 has a through hole 72. When the movable plate 71 slides upward with a sealing plate 41 away from the process chamber 2 to open the preheating chamber 3, the bent pipe body 61 is connected to the air inlet 301 through the through hole 72. The upper end of the movable plate 71... A connecting strip 73 is fixed, and the end of the connecting strip 73 away from the movable plate 71 is fixed to the outer wall of a sealing plate 41 on the preheating chamber 3 near the movable plate 71; the air inlet assembly 8 includes a support plate 81 fixed on the inner wall of the end of the bent pipe body 61 away from the connecting frame 62, and a rotating shaft 82 is rotatably connected to the middle of the support plate 81 through a bearing. An impeller 83 is fixed to the upper end of the rotating shaft 82, and the lower end of the rotating shaft 82 is connected to the output end of the speed increaser 84. The speed increaser 84 is fixed on the support plate 81, and a gear 85 is fixed to the input end of the speed increaser 84. A gear ring 86 is fixed to the top of the base 1, and the gear 85 and the gear ring 86 are meshed and connected.

[0054] It should be noted that when a sealing plate 41 on the side away from the process chamber 2 rises to open the preheating chamber 3, its rise drives the connecting strip 73 and the movable plate 71 to rise simultaneously until the preheating chamber 3 is fully connected to the external environment. At the same time, the through hole 72 on the movable plate 71 is directly opposite the air inlet 301, connecting the bent tube body 61 and the air inlet 301. During the rotation of the process chamber 2, the gear 85 is rotated by the gear ring 86, causing the input end of the speed increaser 84 to rotate. Its output end rotates at a speed of multiple times, driving the impeller 83 to rotate, thereby drawing gas from the external environment into the bent tube body 61 and then into the preheating chamber 3 to dissipate heat from the finished silicon wafer substrate.

[0055] Both the process chamber 2 and the preheating chamber 3 have guide rail assemblies 10 installed on their inner walls for carrying and transporting silicon wafer substrates. The sealing assembly 4 also has a transport assembly 11 installed on it for moving the silicon wafer substrate between the process chamber 2 and the preheating chamber 3. The guide rail assembly 10 includes slide rails 101 symmetrically fixed to the bottom inner wall of the preheating chamber 3 and the bottom inner wall of the process chamber 2, respectively. The guide rails inside the preheating chamber 3 are directly opposite the slide rails 101 inside the process chamber 2. Support frames 102 are slidably mounted on the outer walls of the two slide rails 101 inside the preheating chamber 3. The top of the support frame 102 forms a space for placing silicon wafers. The substrate has an annular groove 1021; the transfer assembly 11 includes a second electric push rod 111 fixed at the lower end of a sealing plate 41 on the side away from the process chamber 2. The extended end of the second electric push rod 111 is slidably connected to the sealing plate 41 through a third sliding hole. The extended end of the second electric push rod 111 extends through the third sliding hole to the inner side of the preheating chamber 3 and is fixed with a first AlNiCo magnet 112. A second AlNiCo magnet 113 is fixed on the side of the support frame 102 close to the first AlNiCo magnet 112, and the first AlNiCo magnet 112 is directly opposite the second AlNiCo magnet 113.

[0056] When the preheating chamber 3 is opened on the side near the loading and unloading end, the robotic arm or a person manually holds the support frame 102 and loads it onto the two slide rails 101 inside the preheating chamber 3, pushing it to the innermost side of the preheating chamber 3. This ensures that the support frame 102 does not obstruct the descent of the sealing plate 41 and the second electric push rod 111. The direction of the push ensures that the second AlNiCo magnet 113 on the support frame 102 is close to the second electric push rod 111 on that side. After the preheating chamber 3 is completely closed and preheating is completed, and it is connected to the process chamber 2, the second electric push rod 111 extends, and the first AlNiCo magnet 112 at its end gradually approaches the second AlNiCo magnet 113 on the support frame 102 until the first AlNiCo magnet 112... The first AlNiCo magnet 112 contacts and is attracted to the second AlNiCo magnet 113. Then, the second electric push rod 111 extends continuously to push the carrier 102 to slide into the process chamber 2 until it slides onto the two slide rails 101 inside the process chamber 2. After entering the process chamber 2, the epitaxial layer deposition operation is performed. After the operation is completed, the second electric push rod 111 retracts to pull the carrier 102 back into the preheating chamber 3. When the preheating chamber 3 is separated from the process chamber 2 and a sealing plate 41 on the side away from the process chamber 2 is opened, the second electric push rod 111 is driven to rise, so that the first AlNiCo magnet 112 and the second AlNiCo magnet 113 are separated. Then, the carrier 102 is taken out from the preheating chamber 3 by a robotic arm.

[0057] Example 2: The present invention also provides a method for using a silicon substrate transport system to reduce silicon wafer warpage, which is the above-mentioned method for using the silicon substrate transport system to reduce silicon wafer warpage, specifically including the following steps:

[0058] S1. At the loading end, the silicon wafer substrate is loaded into the inner side of the annular groove 1021 on the support frame 102, and the support frame 102 is installed into the slide rail 101 in the preheating chamber 3. The support frame 102 is pushed into the innermost side of the preheating chamber 3 to complete the silicon wafer substrate loading work.

[0059] S2. Open the first heating module 12 to preheat the silicon substrate in the preheating chamber 3;

[0060] S3. After preheating, open a sealing plate 41 near the process chamber 2 and push the support frame 102 into the process chamber 2. At the same time, drive the rotating component 9 to rotate the process chamber 2 180 degrees. During and after the rotation, the epitaxial layer deposition work continues inside the process chamber 2. The deposition process is heated by the second heating module 13.

[0061] S4. The deposition end drive conveyor assembly 11 pulls the carrier 102 out into the preheating chamber 3, lowers a sealing plate 41 near the process chamber 2 to separate the preheating chamber 3 from the process chamber 2, and causes a sealing plate 41 away from the process chamber 2 to rise and open the preheating chamber 3.

[0062] S5. Drive the rotating component 9 to rotate the process chamber 2 180 degrees again, so that the finished silicon wafer substrate rotates to the loading and unloading end. During the process, the air intake component 8 heats up the finished silicon wafer substrate, and the finished product is unloaded at the loading and unloading end.

[0063] S6. After the process chamber 2 stops rotating in step S3, the above steps are repeated in a preheating chamber 3 near the loading and unloading end. The two preheating chambers 3 alternately repeat the above steps.

[0064] Furthermore, any content not described in detail in this specification is existing technology known to those skilled in the art.

[0065] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0066] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A silicon substrate transfer system for reducing silicon wafer warpage, characterized in that, The system includes a base, on the top of which a process chamber is rotatably mounted. A silicon wafer substrate undergoes processing within this process chamber. Two preheating chambers are symmetrically connected on the outer circumferential wall of the process chamber. Sealing assemblies are slidably mounted on the inner walls of both open ends of each preheating chamber. These sealing assemblies seal the preheating chambers after the silicon wafer substrate is loaded and placed inside, allowing for preheating. Air inlets are located on the two opposite vertical sidewalls of each preheating chamber. A synchronous heat dissipation mechanism is fixed to the outer wall of the preheating chamber at the corresponding air inlets. This synchronous heat dissipation mechanism includes components for air delivery and is fixed to the outer wall of the preheating chamber. The air inlet duct has a sealing component and an air inlet component installed at one end near the air inlet and the other end away from the air inlet, respectively. The sealing component connects the air inlet and the air inlet duct and seals the air inlet. The air inlet component ventilates the preheating chamber while the process chamber rotates. The inner wall of the base is equipped with a rotating component for driving the process chamber to rotate. The inner walls of both the process chamber and the preheating chamber are equipped with guide rail assemblies for carrying and transferring silicon wafer substrates. The sealing component is also equipped with a transfer component for pushing the silicon wafer substrate between the process chamber and the preheating chamber. The sealing assembly consists of a sealing plate slidably mounted on the inner wall of the preheating chamber and a first electric push rod whose protruding end is fixed to the top surface of the sealing plate. One first electric push rod on the side away from the process chamber is fixed to the top surface of the preheating chamber, and the protruding end of the first electric push rod is slidably connected to the top side wall of the preheating chamber through a first sliding hole. Another first electric push rod on the side close to the process chamber is fixed to the top surface of the process chamber, and the protruding end of the first electric push rod is slidably connected to the top side wall of the process chamber and the top side wall of the preheating chamber through a second sliding hole, respectively. The air inlet pipe consists of a bent pipe body and a connecting frame fixed to the outer wall of the bent pipe body near the preheating chamber. The connecting frame is fixed to the outer wall of the preheating chamber, and the two ends of the bent pipe body are perpendicular to the outer wall of the preheating chamber and the top surface of the base, respectively. The enclosed assembly includes a movable plate that is slidably connected between the inner wall of the connecting frame and the outer wall of the preheating chamber. The lower end of the movable plate has a through hole, and the upper end of the movable plate is fixed with a connecting strip. The end of the connecting strip away from the movable plate is fixed to the outer wall of a sealing plate on the preheating chamber that is close to the movable plate. The air intake assembly includes a support plate fixed to the inner wall of the bent pipe body at the end away from the connecting frame. A rotating shaft is rotatably connected to the middle of the support plate via a bearing. An impeller is fixed to the upper end of the rotating shaft, and the lower end of the rotating shaft is connected to the output end of the speed increaser. The speed increaser is fixed to the support plate, and a gear is fixed to the input end of the speed increaser. A gear ring is fixed to the top of the base, and the gear meshes with the gear ring.

2. The silicon substrate transfer system for reducing silicon wafer warpage according to claim 1, characterized in that: The preheating chamber includes two first heating modules fixed to its inner wall, and the process chamber includes second heating modules fixed to its upper and lower inner walls respectively.

3. The silicon substrate transfer system for reducing silicon wafer warpage according to claim 1, characterized in that: The rotating assembly includes a rotating rod rotatably connected to the middle of the base via a bearing. The upper end of the rotating rod is fixed to the middle of the bottom surface of the process chamber. A worm gear is fixed to the lower end of the rotating rod. A worm is rotatably connected to the inner wall of the base via a bearing. The worm meshes with the worm gear. A motor is also fixed to the inner wall of the base. One end of the worm is fixed to the output end of the motor.

4. The silicon substrate transfer system for reducing silicon wafer warpage according to claim 1, characterized in that: The guide rail assembly includes slide rails symmetrically fixed to the bottom inner wall of the preheating chamber and the bottom inner wall of the process chamber, respectively, with the guide rail inside the preheating chamber facing the slide rail inside the process chamber. The outer walls of the two slide rails inside the preheating chamber are slidably mounted with a support frame, and the top of the support frame has an annular groove for placing a silicon wafer substrate.

5. A silicon substrate transfer system for reducing silicon wafer warpage according to claim 4, characterized in that: The conveying assembly includes a second electric push rod fixed to the lower end of a sealing plate on the side away from the process chamber. The extended end of the second electric push rod is slidably connected to the sealing plate through a third sliding hole. The extended end of the second electric push rod extends through the third sliding hole to the inner side of the preheating chamber and is fixed with a first AlNiCo magnet. A second AlNiCo magnet is fixed on the side of the support frame close to the first AlNiCo magnet, and the first AlNiCo magnet is directly opposite the second AlNiCo magnet.

6. A method for conveying a silicon substrate conveying system to reduce silicon wafer warpage, characterized in that, The method of using the silicon substrate transfer system for reducing silicon wafer warpage as described in any one of claims 1 to 5 specifically includes the following steps: S1. Load the silicon wafer substrate into the inner side of the annular groove on the support frame at the feeding end, and put the support frame into the slide rail in the preheating chamber. Push the support frame into the innermost part of the preheating chamber to complete the silicon wafer substrate feeding work. S2. Turn on the first heating module to preheat the silicon substrate in the preheating chamber; S3. After preheating, open a sealing plate near the process chamber and push the support frame into the process chamber. At the same time, drive the rotating component to rotate the process chamber 180 degrees. During and after the rotation, the epitaxial layer deposition work continues inside the process chamber. The deposition process is heated by the second heating module. S4. The deposition end drive conveyor assembly pulls the carrier out into the preheating chamber, lowers a sealing plate near the process chamber to separate the preheating chamber from the process chamber, and raises a sealing plate away from the process chamber to open the preheating chamber. S5. Drive the rotating component to rotate the process chamber 180 degrees again, so that the finished silicon wafer substrate rotates to the loading and unloading end. During the process, the finished silicon wafer substrate is cooled by the air intake component. When it reaches the loading and unloading end, the finished product is unloaded. S6. After the process chamber stops rotating in step S3, the above steps are repeated in a preheating chamber near the loading and unloading end. The two preheating chambers alternately repeat the above steps.

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