Sputtering device

Abstract

A sputtering device includes: a processing chamber; a substrate holder that holds a substrate with a substrate holding surface in a processing space in the processing chamber; a first target holder that holds a first target with a first surface of the first target facing the processing space; and a second target holder that holds a second target with a second surface of the second target facing the processing space; the first target holder holds the first target such that a normal vector of the first surface with respect to an imaginary plane including the substrate holding surface, i.e., a first normal vector, is projected in a direction away from the substrate; and the second target holder holds the second target such that a normal vector of the second surface with respect to the imaginary plane, i.e., a second normal vector, is projected in a direction away from the substrate.

Description

Technical Field

[0001] This invention relates to a sputtering apparatus and a film formation method. Background Technology

[0002] There exists a sputtering apparatus in which multiple targets are arranged in a chamber, and multiple films are formed by selectively using these targets. In such a sputtering apparatus, cross-contamination between targets may occur. Cross-contamination occurs when a first material emitted from a first target made of a first material adheres to a second target made of a second material, or vice versa. When cross-contamination occurs, the following problems may arise: a film in which the first and second materials are mixed may be formed, making it impossible to obtain the desired film.

[0003] Patent Document 1 discloses a processing chamber comprising: a plurality of targets; and a shield having holes for exposing sputtered targets among the plurality of targets and a bag portion for accommodating unsputtered targets among the plurality of targets. In this processing chamber, by driving the shield to expose selected targets through the holes, while other targets are accommodated in the bag portion, a film can be formed using selected targets. With this configuration, cross-contamination can be prevented.

[0004] Previous technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Publication No. 2019-502030 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] However, as described in Patent Document 1, the configuration of the sputtering apparatus, which involves a movable part such as a drive shield to select the target to be used, complicates the structure of the sputtering apparatus. Furthermore, the mobility of the movable part may contribute to the generation of particles.

[0009] The purpose of this invention is to provide a simple structure and a technique that is advantageous in reducing cross-contamination.

[0010] Methods for solving problems

[0011] The first aspect of the present invention relates to a sputtering apparatus, the sputtering apparatus comprising: a processing chamber; a substrate holder holding a substrate in a processing space within the processing chamber with a substrate holding surface; a first target holder holding a first target with a first surface facing the processing space; and a second target holder holding a second target with a second surface facing the processing space; wherein the first target holder holds the first target such that the orthogonal projection vector of the normal vector of the first surface, which includes the imaginary plane containing the substrate holding surface, is directed toward a direction away from the substrate, and the second target holder holds the second target such that the orthogonal projection vector of the normal vector of the second surface, which includes the imaginary plane, is directed toward a direction away from the substrate.

[0012] The second aspect of the present invention relates to a film forming method. The aforementioned film forming method forms a film on a substrate in a sputtering apparatus, the sputtering apparatus comprising: a processing chamber; a substrate holder holding the substrate in a processing space within the processing chamber with a substrate holding surface; a first target holder holding a first target with its first surface facing the processing space; and a second target holder holding a second target with its second surface facing the processing space. The aforementioned film formation method includes: holding the first target with the first target holder such that the orthogonal projection vector of the normal vector of the first surface of the imaginary plane including the substrate holding surface is directed away from the position where the substrate is to be placed; holding the second target with the second target holder such that the orthogonal projection vector of the normal vector of the second surface of the imaginary plane is directed away from the position where the substrate is to be placed; performing sputtering on the first target while forming a first film on the substrate; and performing sputtering on the second target while forming a second film on the substrate.

[0013] The effects of the invention

[0014] According to the present invention, a simple structure and a technique that is advantageous in reducing cross-contamination are provided. Attached Figure Description

[0015] Figure 1 This is a schematic diagram illustrating the configuration of a sputtering apparatus according to one embodiment.

[0016] Figure 2 It is a diagram that schematically illustrates the relative arrangement of the first target, the second target, and the substrate.

[0017] Figure 3 It is a diagram that schematically illustrates the relative arrangement of the first target, the second target, and the substrate.

[0018] Figure 4 This is a schematic diagram illustrating another example of the relative arrangement of the first target, the second target, and the substrate.

[0019] Figure 5 This is a schematic diagram illustrating another example of the relative arrangement of the first target, the second target, and the substrate.

[0020] Figure 6 It is a diagram that schematically illustrates the relative arrangement of the first target, the second target, and the substrate.

[0021] Figure 7 This is a graph illustrating the changes in the amount of cross-contamination when the angles θ1 and θ2 of the first and second targets are varied.

[0022] Figure 8 This is a diagram illustrating the results of simulating the thickness uniformity of a film formed on a substrate when the angle θ1 of the first target is changed.

[0023] Figure 9A This is a TEM image illustrating the actual multilayer film formed on a substrate using the first and second targets via a sputtering apparatus.

[0024] Figure 9B This is a TEM image illustrating the actual multilayer film formed on a substrate using the first and second targets via a sputtering apparatus.

[0025] Figure 10 This diagram illustrates an example of a sputtering apparatus equipped with three target holders to hold three targets.

[0026] Figure 11 This diagram illustrates other examples of sputtering apparatuses equipped with three target holders to hold three targets.

[0027] Figure 12 This diagram illustrates yet another example of a sputtering apparatus equipped with three target holders to hold three targets. Detailed Implementation

[0028] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments are not intended to limit the invention as described in the claims. Although multiple features are described in the embodiments, it is not limited to the fact that all of these features are essential components of the invention; moreover, the multiple features can be combined arbitrarily. Furthermore, in the drawings, the same or identical components are labeled with the same reference numerals, and repeated descriptions are omitted. In the drawings, directions, positional relationships, and orientations of multiple components are represented in the XYZ coordinate system.

[0029] Figure 1The diagram schematically illustrates the configuration of a sputtering apparatus SA according to one embodiment. The sputtering apparatus SA may include a processing chamber 110 that isolates an internal space from an external space. This internal space may include a processing space 120 and an exhaust space 121. The processing space 120 and the exhaust space 121 are interconnected. The sputtering apparatus SA may include a substrate holder 113 in the processing space 120 of the processing chamber 110 for holding a substrate S. The substrate holder 113 may be configured to have a substrate holding surface HS for holding the substrate S, and to hold the substrate S with the substrate holding surface HS. The substrate holding surface HS may include a plane extending to have an area wider than the back surface of the substrate S (the surface opposite to the surface where the film is formed), or it may be an imaginary plane including multiple contact areas (e.g., the tips of multiple pins supporting the back surface of the substrate S) that contact the back surface of the substrate S.

[0030] The sputtering apparatus SA may include multiple sputtering modules. The number of sputtering modules may be, for example, 2, 3, 4, 5, 6, 7, 8, 9, or 10. These multiple sputtering modules may include a first sputtering module 131 and a second sputtering module 132. The first sputtering module 131 may include a first target holder H1 that holds the first target T1 with its first surface S1 facing the processing space 120. The first sputtering module 131 may also include a first magnet M1. The first sputtering module 131 may also include a first rotation mechanism that rotates the first magnet M1. The second sputtering module 132 may include a second target holder 21 that holds the second target T2 with its second surface S2 facing the processing space 120. The second sputtering module 132 may also include a second magnet M2. The second sputtering module 132 may also include a second rotation mechanism that rotates the second magnet M2.

[0031] In other views, the sputtering apparatus SA may include multiple target holders. The number of target holders may be, for example, 2, 3, 4, 5, 6, 7, 8, 9, or 10. Each of the multiple target holders holds the target with its surface (the sputtered surface) facing the processing space 120. The multiple target holders may include: a first target holder H1, which holds the first target T1 with its first surface S1 facing the processing space 120; and a second target holder H2, which holds the second target T2 with its second surface S2 facing the processing space 120.

[0032] The substrate holder 113 may have a substrate fixing portion 114 for fixing the substrate S. The substrate fixing portion 114 may be configured to mechanically fix the substrate S by contacting a solid member with the substrate S, or it may be configured to fix the substrate S by vacuum attraction, or it may be configured to fix the substrate S by electrostatic force, or it may be configured to fix the substrate S by other methods.

[0033] The sputtering apparatus SA may include a valve 112. The sputtering apparatus SA may be connected to other chambers, such as a loadlock chamber or a transport chamber, via the valve 112. The substrate S may be transported from the external space of the processing chamber 110 of the sputtering apparatus SA to the internal space of the processing chamber 110, or from the internal space of the processing chamber 110 to the external space, via the valve 112 and a transport mechanism (not shown).

[0034] The sputtering apparatus SA may include an exhaust section 119. The exhaust section 119 may be configured to communicate with an exhaust space 121. The sputtering apparatus SA may include a shield 111, which may be configured within the interior space of the processing chamber 110 to surround at least a portion of the processing space 120. The shield 111 may be configured to at least partially separate the processing space 120 from the exhaust space 121. The shield 111 has a plurality of openings through which a plurality of target holders (e.g., target holders H1, H2) can hold a plurality of targets with their surfaces (e.g., targets T1, T2) facing the processing space 120.

[0035] The processing chamber 110 may have a cover, and multiple sputtering modules (e.g., sputtering modules 131, 132) may be disposed on the cover. The substrate S may be configured such that the normal direction of the surface on which the film is formed faces upwards; in this case, multiple targets (e.g., targets T1, T2) may be disposed at a position higher than the substrate S. The substrate S may also be configured such that the normal direction of the surface on which the film is formed faces downwards; in this case, multiple targets (e.g., targets T1, T2) may be disposed at a position lower than the substrate S. Alternatively, the substrate S may be configured such that the normal direction of the surface on which the film is formed faces horizontally.

[0036] Multiple target holders (e.g., target holders H1, H2) may also be configured to adjust the orientation of the surface of the held target (the direction in which the normal of the surface is oriented). The multiple target holders (e.g., target holders H1, H2) function as cathodes, and voltages can be individually applied from power supply 140 to each of the multiple target holders.

[0037] exist Figure 2 , Figure 3 The diagram schematically illustrates the relative arrangement of the first target T1, the second target T2, and the substrate S. Figure 2 For example, the normal vector of the first surface S1 of the first target T1 is the first normal vector N1, and the normal vector of the second surface S2 of the second target T2 is the second normal vector N2. Figure 3 Examples include the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 containing the substrate holding surface HS, and the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1. Figure 3The example illustrates the positional relationship between the center CS of substrate S, the center CT1 of the first target T1, and the center CT2 of the second target T2.

[0038] As illustrated in Figure 2 , Figure 3 In this configuration, the first target holder H1 holds the first target T1 such that the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 containing the substrate holding surface HS faces away from the substrate S. Similarly, the second target holder H2 holds the second target T2 such that the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1 faces away from the substrate S. This configuration is advantageous in simplifying the structure of the sputtering apparatus SA while reducing cross-contamination. Furthermore, this configuration is beneficial for suppressing particle generation.

[0039] One side reference Figure 2 In one example, the angle θ1 between the first normal vector N1 and the imaginary line VV1 orthogonal to the imaginary plane VP1 is preferably greater than 0 degrees. For example, it is preferable that angle θ1 is greater than 0 degrees and less than 10 degrees (i.e., 0 < θ1 ≤ 10 degrees), and more preferably greater than 0 degrees and less than 5 degrees (i.e., 0 < θ1 ≤ 5 degrees). Furthermore, the angle θ2 between the second normal vector N2 and the imaginary line VV2 orthogonal to the imaginary plane VP1 (VV1 and VV2 are parallel, so it can also be VV1) is preferably greater than 0 degrees. For example, angle θ2 preferably satisfies 0 < θ1 ≤ 10 degrees, and more preferably satisfies 0 < θ1 ≤ 5 degrees.

[0040] Here, when focusing on one target among multiple targets, for example, target T1, a configuration in which the orthogonal projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 is directed toward a direction away from the substrate S is advantageous, compared to a non-configured configuration, in reducing the probability of high-energy material particles emitted from the first target T1 during sputtering reaching the substrate S. This is effective in suppressing phenomena such as material particles reaching and mixing into the substrate S (a film already existing beneath the film newly formed on the substrate S by sputtering through target T1). From this perspective, the sputtering apparatus SA can also be applied to an apparatus with a single target. Furthermore, when attempting to form a desired multilayer film by using a first film formed on a substrate using a target made of a first material and a second film formed on the substrate using a target made of a second material, a layer (mixed layer) of mixed first and second materials may form at its boundary, resulting in a problem where the desired multilayer film cannot be obtained. The causes of mixing may include cross-contamination, kinetic energy, and other factors; this description does not limit the causes of mixing.

[0041] In the example shown Figure 3 For example, although the center CS of the substrate S, the center CT1 of the first target T1, and the center CT2 of the second target T2 are arranged in a straight line, at least one of the center CS of the substrate S, the center CT1 of the first target T1, and the center CT2 of the second target T2 may be arranged off-line. Furthermore, in the example shown... Figure 3 For example, although the substrate S is rectangular, it may also have other shapes such as circular. The distance between the first target T1 and the substrate S (e.g., the distance between CT1 and CS) may be the same as or different from the distance between the second target T2 and the substrate S (e.g., the distance between CT2 and CS).

[0042] In the example shown Figure 3 For example, the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 and the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1 are on the same straight line and point in opposite directions to each other. However, as illustrated in... Figure 4 , Figure 5 In this configuration, the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 and the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1 may not lie on the same straight line. This configuration preferably satisfies 0 < θ1, θ2. For example, it is preferable that 0 < θ1, θ2 ≤ 10 degrees, and more preferably that 0 < θ1, θ2 ≤ 5 degrees. This configuration is advantageous in both simplifying the structure of the sputtering apparatus SA and reducing cross-contamination. Furthermore, this configuration is beneficial for suppressing particle generation.

[0043] In other viewpoints, such as those exemplified separately Figure 3 , Figure 4 , Figure 5 Thus, the first target holder H1 and the second target holder H2 are configured such that the center CT1 of the first target T1, the center CT2 of the second target T2, and the center CS of the substrate S are disposed on the second imaginary plane VP2. Figure 6Examples include the orthographic projection vector OPN21 of the first normal vector N1 relative to the second imaginary plane VP2 and the orthographic projection vector OPN22 of the second normal vector N2 relative to the second imaginary plane VP2. In this configuration, the angle θ1' between the orthographic projection vector OPN21 of the first normal vector N1 relative to the second imaginary plane VP2 and the imaginary line VV1 orthogonal to the imaginary plane VP1 is preferably greater than 0 degrees. For example, it is preferable that 0 < θ1' ≤ 10 degrees, and more preferably that 0 < θ1' ≤ 5 degrees. Furthermore, the angle θ2' between the orthographic projection vector OPN22 of the second normal vector N2 relative to the second imaginary plane VP2 and the imaginary line VV2 (VV1 and VV2 are parallel, so it can also be VV1) is preferably greater than 0 degrees. For example, it is preferable that 0 < θ2' ≤ 10 degrees, and more preferably that 0 < θ2' ≤ 5 degrees. This configuration is advantageous in both simplifying the structure of the sputtering apparatus SA and reducing cross-contamination. Furthermore, this configuration is beneficial for suppressing particle formation.

[0044] Other viewpoints, as shown Figure 3 , Figure 4 , Figure 5 The second imaginary plane VP2 can also be defined as a plane that includes the center CT1 of the first target T1 and the center CT2 of the second target T2 and is perpendicular to the imaginary plane VP1. In this case, the center CS of the substrate S is not an element in defining the second imaginary plane VP2. In such a definition, the angle θ1' between the orthographic projection vector OPN21 of the first normal vector N1 relative to the second imaginary plane VP2 and the imaginary line VV1 orthogonal to the imaginary plane VP1 is preferably greater than 0 degrees. For example, it is preferable that 0 < θ1' ≤ 10 degrees, and more preferably that 0 < θ1' ≤ 5 degrees. Similarly, the angle θ2' between the orthographic projection vector OPN22 of the second normal vector N2 relative to the second imaginary plane VP2 and the imaginary line VV2 (VV1 and VV2 are parallel, so it can also be VV1) is preferably greater than 0 degrees. For example, it is preferable that 0 < θ2' ≤ 10 degrees, and more preferably that 0 < θ2' ≤ 5 degrees.

[0045] exist Figure 7 This shows a simulation in the example shown. Figure 2 The result is the change in the amount of cross-contamination when the angles θ1 and θ2 of targets T1 and T2 are varied in the configuration. The horizontal axis (cathode angle [degrees]) represents the angles θ1 and θ2 of targets T1 and T2 (degrees), and the vertical axis (contamination [au]) represents the amount of cross-contamination. (The diagram is shown below.) Figure 7In the example, Mo was used for target T1 and Si was used for target T2. It can be seen that the amount of cross-contamination is sufficiently low when 0 < θ1 and θ2 ≤ 10 (degrees). Furthermore, this suggests that the amount of cross-contamination decreases as θ1 and θ2 increase. Additionally, although the sputtering emission angle changes accordingly when the materials of targets T1 and T2 are changed, it is confirmed that the amount of cross-contamination is sufficiently low when 0 < θ1 and θ2 ≤ 10 (degrees).

[0046] Here, the method for evaluating the amount of cross-contamination is explained. First, a first step is performed, in which sputtering discharge is performed using a first target T1, but no sputtering discharge is performed using a second target T2. Through this first step, a first film is formed on the substrate S using the material of the first target T1, i.e., the first material. Next, a second step is performed, in which sputtering discharge is performed on the first target T1 but not on the second target T2. Through this second step, a second film is formed on the substrate S (the first film) using the material of the second target T2, i.e., the second material. Then, the amount of the first material contained in the second film on the substrate S is evaluated. The amount of the first material contained in the second film can be evaluated as the amount of cross-contamination. Cross-contamination is the phenomenon that the first material released from the first target T1 by sputtering in the first step adheres to the surface of the second target T2. Furthermore, the first material attached to the surface of the second target T2 will be released from the surface of the second target T2 by sputtering in the second process and mixed into the second film on the substrate S.

[0047] Figure 8 In, it is shown in Figure 2 In the configuration, the simulation results regarding the film thickness uniformity formed on the substrate S were obtained by varying the angle θ1 of the target T1. The horizontal axis (cathode angle [degrees]) represents the angle θ1 (degrees) of the target T1, and the vertical axis (uniformity [au]) represents the film thickness uniformity formed on the substrate S. Here, a small film thickness uniformity value indicates small film thickness variability, that is, good film thickness uniformity. From Figure 8 It can be seen that the film thickness uniformity is good when 0 < θ ≤ 5 (degrees). Furthermore, although the sputtering emission angle changes accordingly when the target T1 material is changed, it is confirmed that the film thickness uniformity is good when 0 < θ1 ≤ 5 (degrees). Moreover, it is confirmed that the same results are obtained when the angle θ2 of the target T2 is changed.

[0048] Based on the simulation results above, in the range of 0 < θ1 and θ2 ≤ 5 (degrees), it is beneficial to reduce cross-contamination and also to achieve good film thickness uniformity. Furthermore, the sputtering apparatus SA can be equipped with a rotation mechanism that rotates the substrate holder 113 about an axis orthogonal to the imaginary plane VP1, which can improve film thickness uniformity. Therefore, good film thickness uniformity can also be achieved in the range where θ1 and θ2 are larger than 5 degrees.

[0049] exist Figure 9A , Figure 9B The image shows a TEM (transmission electron microscope) image of the multilayer film actually formed on the substrate S using targets T1 and T2 through a sputtering apparatus SA. Figure 9A The image shows a TEM image of a stacked film formed under the condition that θ1=θ2=0. Figure 9B This is a TEM image of a stacked film formed under the condition θ1=θ2=θ+2 degrees. That is, it is used to obtain... Figure 9B The θ1, θ2 ratio of the stacked film is used to obtain Figure 9A The θ1 and θ2 of the stacked film are large.

[0050] exist Figure 9A , Figure 9B F2n-1, F1n, and F2n are the second film formed using the second target T2, the first film formed using the first target T1, and the second film formed using the second target T2, respectively. At the boundary between the second film F2n-1 and the first film F1n, there exists a mixed layer P1 containing both the first and second materials. At the boundary between the first film F1n and the second film F2n, there also exists a mixed layer P2 containing both the first and second materials. The measurement results... Figure 9A When the thicknesses of the hybrid layers P1 and P2 are t1 and t2 respectively, Figure 9B The thicknesses of the mixing layers P1 and P2 are 0.6 times that of t1 and t2, respectively. This means that by increasing θ1 and θ2, the thicknesses of the mixing layers P1 and P2 can be reduced, thus suppressing mixing.

[0051] exist Figure 10 This illustrates a first example of a sputtering apparatus SA equipped with target holders H1, H2, and H3 for holding targets T1, T2, and T3. Figure 10 ,as Figure 3 Examples include the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 containing the substrate holding surface HS, and the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1. Furthermore, in Figure 10 The diagram shows the orthographic projection vector OPN13 of the third normal vector relative to an imaginary plane VP1 containing the substrate holding surface HS. Here, the third normal vector is the normal vector of the third surface of the third target T3. The third target holder H3 can hold the third target T3 such that the orthographic projection vector OPN13 of the third normal vector is oriented in a direction away from the first target T1. Alternatively, the third target holder H3 can hold the third target T3 such that the orthographic projection vector OPN13 of the third normal vector is oriented in a direction away from the first target T1 and the substrate S. The first target holder H1 can also hold the first target T1 such that the orthographic projection vector OPN11 of the first normal vector N1 is oriented in a direction away from the third target T3 and the substrate S. (Shown...) Figure 10 The configuration is useful in the following cases: the thickness t1 of the first film formed on the substrate S using the first target T1 is greater than the thickness t2 of the second film formed on the substrate S using the second target T2, and the thickness t2 of the second film is greater than the thickness t3 of the third film formed on the substrate S using the third target T3.

[0052] exist Figure 11 This illustrates a second example of a sputtering apparatus SA equipped with target holders H1, H2, and H3 for holding targets T1, T2, and T3. Figure 11 ,as Figure 3 Examples include the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 containing the substrate holding surface HS, and the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1. Furthermore, in Figure 11 The diagram shows the orthographic projection vector OPN13 of the third normal vector relative to the imaginary plane VP1 containing the substrate holding surface HS. Here, the third normal vector is the normal vector of the third surface of the third target T3. The third target holder H3 can hold the third target T3 such that the orthographic projection vector OPN13 of the third normal vector is oriented in a direction away from the second target T2. Alternatively, the third target holder H3 can hold the third target T3 such that the orthographic projection vector OPN13 of the third normal vector is oriented in a direction away from the second target T2 and the substrate S. The second target holder H2 can also hold the second target T2 such that the orthographic projection vector OPN12 of the second normal vector N2 is oriented in a direction away from the third target T3 and the substrate S. (Shown...) Figure 11 The configuration is useful in the following cases: the thickness t2 of the second film formed on the substrate S using the second target T2 is greater than the thickness t1 of the first film formed on the substrate S using the first target T1, and the thickness t1 of the first film is greater than the thickness t3 of the third film formed on the substrate S using the third target T3.

[0053] exist Figure 12 This illustrates a first example of a sputtering apparatus SA equipped with target holders H1, H2, and H3 for holding targets T1, T2, and T3. Figure 12 ,as Figure 3 Examples include the orthographic projection vector OPN11 of the first normal vector N1 relative to the imaginary plane VP1 containing the substrate holding surface HS, and the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1. Furthermore, in Figure 12The diagram shows the orthographic projection vector OPN13 of the third normal vector relative to the imaginary plane VP1 containing the substrate holding surface HS. Here, the third normal vector is the normal vector of the third surface of the third target T3. The third target holder H3 can hold the third target T3 such that the orthographic projection vector OPN13 of the third normal vector faces away from the substrate S. Alternatively, the third target holder H3 can hold the third target T3 such that the orthographic projection vector OPN13 of the third normal vector faces away from the substrate S, the first target T1, and the second target T2. The first target holder H1 can also hold the first target T1 such that the orthographic projection vector OPN11 of the first normal vector N1 faces away from the third target T3 and the substrate S. The second target holder H2 can also hold the second target T2 such that the orthographic projection vector OPN12 of the second normal vector N2 faces away from the third target T3 and the substrate S. (See diagram) Figure 12 The configuration is useful when the thickness t1 of the first film formed on the substrate S using the first target T1 and the thickness t2 of the second film formed on the substrate S using the second target T2 are greater than the thickness t3 of the third film formed on the substrate S using the third target T3, and the difference between the thickness t1 of the first film and the thickness t2 of the second film is smaller than the difference between the thickness t1 of the first film and the thickness t3 of the third film or the difference between the thickness t2 of the second film and the thickness t3 of the third film.

[0054] The following describes, by way of example, a film formation method for forming a film on a substrate using a sputtering apparatus SA. The film formation method may include the following steps: holding a first target T1 by a first target holder H1 such that the orthographic projection vector OPN11 of the first normal vector N1 relative to an imaginary plane VP1 including the substrate holding surface HS is directed away from the position where the substrate S is to be positioned (or a predetermined position, such as the center, of the substrate holder 113). Furthermore, the film formation method may include the following steps: holding the aforementioned second target by a second target holder H2 such that the orthographic projection vector OPN12 of the second normal vector N2 relative to the imaginary plane VP1 is directed away from the position where the substrate S is to be positioned (or a predetermined position, such as the center, of the substrate holder 113). In addition, the film formation method may include the following steps: with targets T1 and T2 held by target holders H1 and H2 respectively, and substrate S held by substrate holder 113, a first film is formed on substrate S while sputtering is performed on the first target T1; and a second film is formed on substrate S while sputtering is performed on the second target T2.

[0055] The invention is not limited to the aforementioned embodiments, and various changes and modifications can be made without departing from the concept and scope of the invention. Therefore, the claims have been prepared to disclose the scope of the invention.

[0056] Explanation of reference numerals in the attached figures

[0057] 110: Processing chamber, 120: Processing space, S: Substrate, HS: Substrate holding surface, 113: Substrate holder, T1: First target, T2: Second target, H1: First target holder, H2: Second target holder, VP1: Imaginary plane, N1: First normal vector, N2: Second normal vector, OPN11: Orthographic projection vector, OPN12: Orthographic projection vector.

Claims

1. A sputtering apparatus, comprising: Processing room; A substrate holder that holds a substrate in the processing space within the aforementioned processing chamber with its substrate holding surface. A first target holder holds the first target such that the first surface of the first target faces the aforementioned processing space; and The second target holder holds the second target such that the second surface of the second target faces the processing space, wherein... The aforementioned first target holder holds the aforementioned first target such that the orthographic projection vector of the normal vector of the aforementioned first surface relative to the imaginary plane including the aforementioned substrate holding surface faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned first target relative to the aforementioned imaginary plane does not overlap with the aforementioned substrate. The aforementioned second target holder holds the aforementioned second target such that the orthographic projection vector of the normal vector of the aforementioned second surface relative to the aforementioned imaginary plane, i.e., the second normal vector, faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned second target relative to the aforementioned imaginary plane does not overlap with the aforementioned substrate. In an orthographic projection relative to the aforementioned imaginary plane, the aforementioned substrate is disposed between the aforementioned first target and the aforementioned second target. The angle between the aforementioned first normal vector and the imaginary line orthogonal to the aforementioned imaginary plane is greater than 0 degrees but less than 10 degrees. The angle between the aforementioned second normal vector and the aforementioned imaginary line orthogonal to the aforementioned imaginary plane is greater than 0 degrees and less than 10 degrees.

2. The sputtering apparatus as described in claim 1, wherein, The angle between the aforementioned first normal vector and the aforementioned imaginary line orthogonal to the aforementioned imaginary plane is greater than 0 degrees but less than 5 degrees. The angle between the aforementioned second normal vector and the aforementioned imaginary line orthogonal to the aforementioned imaginary plane is greater than 0 degrees and less than 5 degrees.

3. The sputtering apparatus as described in claim 1, wherein, The aforementioned first target holder and the aforementioned second target holder are configured such that the center of the aforementioned first target, the center of the aforementioned second target, and the center of the aforementioned substrate are disposed on the second imaginary plane.

4. A sputtering apparatus, comprising: Processing room; A substrate holder that holds a substrate in the processing space within the aforementioned processing chamber with its substrate holding surface. A first target holder holds the first target such that the first surface of the first target faces the aforementioned processing space; and The second target holder holds the second target such that the second surface of the second target faces the processing space, wherein... The aforementioned first target holder holds the aforementioned first target such that the orthographic projection vector of the normal vector of the aforementioned first surface relative to the first imaginary plane including the aforementioned substrate holding surface faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned first target relative to the aforementioned first imaginary plane does not overlap with the aforementioned substrate. The aforementioned second target holder holds the aforementioned second target such that the orthographic projection vector of the normal vector of the aforementioned second surface relative to the aforementioned first imaginary plane, i.e., the second normal vector, faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned second target relative to the aforementioned first imaginary plane does not overlap with the aforementioned substrate. In an orthographic projection relative to the first imaginary plane, the substrate is positioned between the first target and the second target. The angle between the orthogonal projection vector of the first normal vector relative to the second imaginary plane, which includes the centers of the first and second targets and is perpendicular to the first imaginary plane, and the imaginary line orthogonal to the first imaginary plane, is greater than 0 degrees and less than 10 degrees. The angle between the orthogonal projection vector of the second normal vector relative to the second imaginary plane and the imaginary line is greater than 0 degrees and less than 10 degrees.

5. The sputtering apparatus as described in claim 4, wherein, The angle between the orthographic projection vector of the first normal vector relative to the second imaginary plane and the imaginary line orthogonal to the first imaginary plane is greater than 0 degrees and less than 5 degrees. The angle between the aforementioned orthographic projection vector of the aforementioned second normal vector relative to the aforementioned second imaginary plane and the aforementioned imaginary line is greater than 0 degrees and less than 5 degrees.

6. A sputtering apparatus, comprising: Processing room; A substrate holder that holds a substrate in the processing space within the aforementioned processing chamber with its substrate holding surface. The first target holder holds the first target with the first surface of the first target facing the processing space. A second target holder, which holds the second target with its second surface facing the aforementioned processing space; and A third target holder holds the third target such that the third surface of the third target faces the aforementioned processing space, wherein... The aforementioned first target holder holds the aforementioned first target such that the orthographic projection vector of the normal vector of the aforementioned first surface relative to the first imaginary plane including the aforementioned substrate holding surface faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned first target relative to the aforementioned first imaginary plane does not overlap with the aforementioned substrate. The aforementioned second target holder holds the aforementioned second target such that the orthographic projection vector of the normal vector of the aforementioned second surface relative to the aforementioned first imaginary plane, i.e., the second normal vector, faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned second target relative to the aforementioned first imaginary plane does not overlap with the aforementioned substrate. In a projection relative to the first imaginary plane, the substrate is positioned between the first target, the second target, and the third target. The aforementioned third target holder holds the aforementioned third target such that the orthogonal projection vector of the normal vector of the aforementioned third surface relative to the aforementioned first imaginary plane is directed in a direction away from the aforementioned first target.

7. The sputtering apparatus as described in claim 6, wherein, The aforementioned third target holder holds the aforementioned third target such that the aforementioned orthogonal projection vector of the aforementioned third normal vector relative to the aforementioned first imaginary plane is oriented in a direction away from the aforementioned first target and the aforementioned substrate.

8. The sputtering apparatus as claimed in claim 7, wherein, The thickness of the first film formed on the substrate using the first target is greater than the thickness of the second film formed on the substrate using the second target. The thickness of the second film is greater than the thickness of the third film formed on the substrate using the third target.

9. A sputtering apparatus, comprising: Processing room; A substrate holder that holds a substrate in the processing space within the aforementioned processing chamber with its substrate holding surface. The first target holder holds the first target with the first surface of the first target facing the processing space. A second target holder, which holds the second target with its second surface facing the aforementioned processing space; and A third target holder holds the third target such that the third surface of the third target faces the aforementioned processing space, wherein... The aforementioned first target holder holds the aforementioned first target such that the orthographic projection vector of the normal vector of the aforementioned first surface relative to the first imaginary plane including the aforementioned substrate holding surface faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned first target relative to the aforementioned first imaginary plane does not overlap with the aforementioned substrate. The aforementioned second target holder holds the aforementioned second target such that the orthographic projection vector of the normal vector of the aforementioned second surface relative to the aforementioned first imaginary plane, i.e., the second normal vector, faces a direction away from the aforementioned substrate, and the orthographic projection of the aforementioned second target relative to the aforementioned first imaginary plane does not overlap with the aforementioned substrate. In a projection relative to the first imaginary plane, the substrate is positioned between the first target, the second target, and the third target. The aforementioned third target holder holds the aforementioned third target such that the orthogonal projection vector of the normal vector of the aforementioned third surface relative to the aforementioned first imaginary plane is directed away from the aforementioned substrate.

10. The sputtering apparatus as claimed in claim 9, wherein, The thickness of the first film formed on the substrate using the first target and the thickness of the second film formed on the substrate using the second target are greater than the thickness of the third film formed on the substrate using the third target. The difference between the thickness of the first membrane and the thickness of the second membrane is smaller than the difference between the thickness of the first membrane and the thickness of the third membrane or the difference between the thickness of the second membrane and the thickness of the third membrane.

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