一种Zn-Ni2P / g-C3N4Ⅱ异质结光催化剂及其制备方法和应用
By introducing Zn-Ni2P onto g-C3N4 to form a heterojunction and construct a porous nanostructure, the problems of low activity and high recombination rate of g-C3N4 photocatalysts were solved, achieving efficient photocatalytic hydrogen evolution and improved stability, reducing production costs, and making it suitable for industrial applications.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHAANXI UNIV OF SCI & TECH
- Filing Date
- 2024-01-15
- Publication Date
- 2026-07-17
AI Technical Summary
The low specific surface area and high photogenerated electron recombination rate of g-C3N4 photocatalyst limit its photocatalytic activity. Therefore, it is necessary to develop high-performance and low-cost photocatalysts to improve the efficiency and stability of photocatalytic hydrogen evolution.
Zn-Ni2P/g-C3N4 heterojunction photocatalysts were prepared by hydrothermal method and low-temperature solid-state sintering method. By introducing Zn-Ni2P onto g-C3N4, a heterojunction was formed to accelerate the separation of photogenerated carriers. Furthermore, the porous nanostructure was used to increase the reactive sites and reduce the recombination of photogenerated carriers.
It improves the efficiency of photocatalytic hydrogen evolution, enhances the stability of the catalyst, and reduces the production cost, making the preparation process simple, easy to control, and suitable for industrial production.
Smart Images
Figure CN117884165B_ABST