一种一步刻蚀Cu / ITO薄膜的蚀刻液
Simultaneous etching of copper and indium tin oxide layers was achieved using an etching solution containing a specific ratio of components. This solved the problems of low efficiency and high cost in the step-by-step etching process of existing technologies, improved production efficiency and the stability of the etching solution, and made it suitable for use in the panel industry.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HEFEI SINOPISE MATERIALS CO LTD
- Filing Date
- 2024-01-11
- Publication Date
- 2026-07-17
AI Technical Summary
In existing technologies, etching of the copper layer and the indium tin oxide layer requires two mask processes, resulting in low production efficiency, high cost and complex process. Furthermore, existing etching solutions are not suitable for long-term storage and are expensive, making them unsuitable for widespread use in the panel industry.
An etching solution for one-step etching of Cu/ITO thin films is used, which contains hydrogen peroxide, co-oxidant, fluoride, chelating agent, stabilizer, corrosion inhibitor, pH adjuster and auxiliary agent. Through precise proportion and combination, the two thin films can be etched simultaneously, thereby improving the stability and selectivity of the etching solution.
Simultaneous etching of two thin films is achieved, reducing process steps, lowering costs, improving production efficiency, enhancing the stability of the etching solution and the etching effect on the ITO layer, reducing substrate damage, and making it suitable for long-term storage.
Smart Images
Figure CN117887466B_ABST