Plasma processing apparatus and method of use

Abstract

The application discloses a plasma processing device and a use method thereof. The plasma processing device comprises a reaction cavity, a pedestal arranged inside the reaction cavity and used for carrying a substrate, a shower head arranged opposite to the pedestal inside the reaction cavity and used for introducing a process gas into a reaction area between the pedestal and the shower head to form a plasma, a moving ring which can be lifted between a high position and a low position and which surrounds the reaction area when at the low position, and a magnetic field generating device arranged on the moving ring and lifted with the moving ring, the magnetic field generating device surrounding the reaction area when the moving ring is at the low position. In the application, a first magnetic field is generated in the reaction area by the magnetic field generating device, the direction and rate of plasma etching can be changed, the plasma density distribution in the reaction area can be flexibly adjusted, and the etching uniformity of the substrate is ensured.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a plasma processing apparatus and its method of use. Background Technology

[0002] In plasma etching equipment, plasma density and ion energy can be controlled by high-frequency or low-frequency power sources to etch preset patterns onto the substrate surface. However, due to the design of the plasma etching chamber, standing waves will appear in the reaction area between the spray head and the substrate surface, resulting in a higher plasma concentration above the central region of the substrate, leading to uneven sheathing across the entire substrate surface.

[0003] For the high aspect ratio etching process of 3D NAND, the gap between the spray head in the chamber and the substrate surface is larger, resulting in a more uneven distribution of plasma concentration. It also affects the collimation of the plasma, leading to more obvious non-uniformity of the sheath layer on the substrate surface. Specifically, this manifests as: (1) a large deviation in the plasma etching direction within the reaction area, causing the etched trenches to tilt, and even the entire substrate outline to tilt; (2) the top of the trench with a high aspect ratio is more affected by plasma etching, resulting in the etched trenches exhibiting an arc-shaped bend. Therefore, it is necessary to adjust the structure of the plasma processing device. Summary of the Invention

[0004] The purpose of this invention is to provide a plasma processing device and a method of use. By generating a first magnetic field in the reaction area through a magnetic field generator, the direction and rate of plasma etching can be changed, and the plasma distribution in the reaction area can be made uniform, thereby ensuring the etching uniformity of the substrate.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0006] A plasma processing apparatus, comprising:

[0007] reaction chamber;

[0008] A base, disposed inside the reaction chamber, is used to support the substrate;

[0009] A spray head is disposed inside the reaction chamber opposite to the base, and is used to introduce process gas into the reaction area between the base and the spray head to form plasma;

[0010] A movable ring that can rise and fall between a high position and a low position, wherein, in the low position, the movable ring is arranged around the reaction region; and

[0011] A magnetic field generating device is disposed on the moving ring and rises and falls with the moving ring. When the moving ring is in the low position, the magnetic field generating device surrounds the reaction area.

[0012] Optionally, the cross-section of the magnetic field generator is annular.

[0013] Optionally, the magnetic field generating device is fixedly installed inside the moving ring.

[0014] Optionally, the magnetic field generating device is fixedly mounted on the outer or inner sidewall of the moving ring.

[0015] Optionally, the magnetic field generating device includes a ring composed of several arc segments; and the magnetic field strength formed by each arc segment is adjustable.

[0016] Optionally, the magnetic field generating device includes a permanent magnet.

[0017] Optionally, the magnetic field generating device includes a coil.

[0018] Optionally, the plasma processing device further includes: a lifting rod connected to the moving ring for driving the moving ring to rise and fall; the lifting rod has a wire inside, and the coil is connected to a power source outside the reaction chamber through the wire.

[0019] Optionally, the magnetic field generating device generates a first magnetic field within the reaction region; the vertical component of the magnetic field strength of the first magnetic field is greater than the horizontal component of the magnetic field strength.

[0020] Optionally, the magnetic field strength of the first magnetic field gradually increases along the direction from the center region to the edge region of the substrate.

[0021] Optionally, the plasma processing device further includes an auxiliary magnetic field adjustment device, which is disposed above the reaction region and located outside the reaction region.

[0022] Optionally, the auxiliary magnetic field adjustment device is an energized coil or a ring-shaped permanent magnet.

[0023] Optionally, the top of the reaction chamber is provided with a mounting base plate for fixing the spray head; and the auxiliary magnetic field adjustment device is disposed above the mounting base plate.

[0024] Optionally, the auxiliary magnetic field adjustment device generates a second magnetic field within the reaction region; the horizontal component of the magnetic field strength of the second magnetic field is greater than the vertical component of the magnetic field strength.

[0025] Optionally, the plasma processing apparatus further includes: a coordination adjustment device, which is arranged around the base and located outside the reaction region.

[0026] Optionally, the adjustment device is a ring-shaped permanent magnet.

[0027] On the other hand, the present invention also provides a method of using the plasma processing apparatus as described above, comprising:

[0028] Raise the moving ring to a high position to place the substrate on the base;

[0029] The moving ring is lowered to a low position to surround the reaction region;

[0030] Process gas is introduced into the reaction zone through the spray head to form plasma;

[0031] The magnetic field generating device generates a first magnetic field in the reaction region to change the direction and rate of plasma etching and to make the plasma distribution in the reaction region uniform.

[0032] The moving ring is raised to the high position to remove the etched substrate from the base.

[0033] Optionally, the method of using the plasma processing device further includes:

[0034] An auxiliary magnetic field adjustment device is provided above the reaction region;

[0035] The auxiliary magnetic field adjustment device generates a second magnetic field in the reaction region to make the plasma distribution in the reaction region uniform.

[0036] Compared with the prior art, the present invention has at least one of the following advantages:

[0037] This invention provides a plasma processing device and method of use. A base inside a reaction chamber supports a substrate. A spray head opposite the base can introduce process gas into the reaction area between the base and the spray head to form plasma. A magnetic field generator on a moving ring can move up and down with the moving ring. When the moving ring is at a low position, the magnetic field generator surrounds the reaction area to generate a first magnetic field in the reaction area, changing the direction and rate of plasma etching and making the plasma distribution in the reaction area uniform, thereby ensuring the etching uniformity of the substrate and improving the substrate yield.

[0038] In this invention, the magnetic field generator can be fixedly installed within the moving ring, preventing it from being corroded or contaminated by plasma and reaction byproducts, thus ensuring its service life. Simultaneously, the magnetic field generator has a ring-shaped cross-section, meaning it can be a ring surrounding the reaction area, allowing the first magnetic field to cover the entire reaction area, thereby ensuring a more uniform distribution of plasma along its circumference within the reaction area.

[0039] In this invention, the magnetic field strength of the first magnetic field gradually increases from the center region to the edge region of the substrate. Under the action of the first magnetic field, the plasma in the reaction region moves from the center region to the edge region of the substrate, thereby increasing the plasma distribution density in the edge region of the substrate. This makes the plasma distribution in the center region and the edge region of the substrate more uniform, thus ensuring the etching uniformity of the substrate.

[0040] In this invention, the vertical component of the magnetic field strength of the first magnetic field is greater than the horizontal component of the magnetic field strength, which allows the first magnetic field to change the concentration distribution range of the plasma, optimize the incident direction of charged particles on the substrate surface, thereby improving the collimation of the plasma and preventing the trenches etched on the substrate from tilting.

[0041] In this invention, the first magnetic field can also change the etching rate of plasma in different regions by changing the plasma concentration distribution, so that the plasma reaches the substrate surface at the etching rate required by the process, thereby etching the substrate more uniformly and further ensuring the etching uniformity of the substrate.

[0042] In this invention, the auxiliary magnetic field adjustment device can generate a second magnetic field, and the horizontal component of the magnetic field strength of the second magnetic field is greater than the vertical component of the magnetic field strength, so that the second magnetic field can be regarded as a horizontal magnetic field. Then, the plasma in the reaction area will move from the center region of the substrate to the edge region under the action of the second magnetic field, thereby assisting the first magnetic field to adjust the uniformity of the plasma distribution in the reaction area. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of the structure of a plasma processing device provided in an embodiment of the present invention;

[0044] Figure 2 This is a schematic diagram of the structure of a plasma processing device with a matching adjustment device provided in an embodiment of the present invention;

[0045] Figure 3 This is a flowchart of a method for using a plasma processing device according to an embodiment of the present invention. Detailed Implementation

[0046] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed explanation of the plasma processing apparatus and its usage method proposed in this invention. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clearly illustrate the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes and to enable those skilled in the art to understand and read them, and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0047] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0048] Combined with appendix Figure 1 As shown, this embodiment provides a plasma processing apparatus, including: a reaction chamber 110; a base 120 disposed at the bottom of the reaction chamber 110 for supporting a substrate 100; a spray head 130 disposed opposite to the base 120 at the top of the reaction chamber 110 for introducing process gas into the reaction region 200 between the base 120 and the spray head 130 to form plasma; a moving ring 140 that can rise and fall between a high position and a low position, wherein the moving ring 140 is arranged around the reaction region 200 when the moving ring 140 is in the low position; and a magnetic field generating device 150 disposed on the moving ring 140 and rising and falling with the moving ring 140, wherein the magnetic field generating device 150 surrounds the reaction region 200 when the moving ring 140 is in the low position.

[0049] Specifically, in this embodiment, the spray head 130 is connected to a gas supply device 131 located outside the reaction chamber 110 to introduce process gas from the gas supply device 131 into the reaction region 200. Simultaneously, the spray head 130 can also serve as the upper electrode of the reaction chamber 110, and the base 120 can also serve as the lower electrode of the reaction chamber 110. At least one radio frequency power supply 121 is applied to the upper electrode or the lower electrode through a matching network 122 to generate a radio frequency electric field between the upper and lower electrodes, thereby ionizing the process gas in the reaction region 200 into plasma for etching the substrate 100. However, this invention is not limited to this.

[0050] Specifically, in this embodiment, the plasma processing device further includes a lifting rod 160, which is connected to the moving ring 140 and a driving mechanism located outside the reaction chamber 110, respectively, for driving the moving ring 140 to move up and down between the high position and the low position. More specifically, a transfer port 111 is provided on the side wall of the reaction chamber 110, and the high position is located above the transfer port 111, so that when the moving ring 140 rises to the high position, it can perform the operation of picking up and placing the substrate through the transfer port 111; when the moving ring 140 descends to the low position, the moving ring 140 surrounds the periphery of the reaction region 200, and together with the constraint ring 112 arranged around the base 120, it confines the plasma within the reaction region 200, thereby preventing plasma from leaking into the non-reaction region and causing damage to the components in the non-reaction region, but the present invention is not limited thereto.

[0051] Specifically, due to the standing wave effect, the plasma concentration in the reaction region 200, i.e. the concentration of charged particles in the plasma, will exhibit an uneven distribution from the central region above the substrate 100 to the edge region. This is mainly manifested in the fact that the plasma concentration is higher at the center and decreases radially towards the edge of the substrate. It may also increase again when approaching the edge. At the same time, the collimation of the plasma is disrupted, which causes the etching morphology of the edge region of the substrate 100 to tilt, resulting in etching defects and different etching rates between the edge region and the center region. In this embodiment, the magnetic field generating device 150, disposed on the moving ring 140 and surrounding the reaction region 200, can generate a magnetic field in the reaction region 200. Charged particles in the plasma will move in a spiral motion along the magnetic field lines. The closer to the edge region of the substrate 100, the more the magnetic field lines bend in the horizontal direction, and the greater the outward magnetic force on the charged particles. This enables the charged particles in the central region of the substrate 100 to move towards the edge, thereby increasing the plasma distribution density in the edge region of the substrate 100. This makes the plasma distribution in the central and edge regions of the substrate 100 uniform, thus ensuring the etching uniformity of the substrate 100. At the same time, the magnetic field generating device 150 can also change the direction and rate of plasma etching in the reaction region 200, thereby improving the collimation of the plasma and further ensuring the etching uniformity of the substrate 100. However, the present invention is not limited thereto.

[0052] Please continue to refer to this. Figure 1 The magnetic field generating device 150 is fixedly installed inside the moving ring 140; the cross-section of the magnetic field generating device 150 is annular.

[0053] It is understood that the magnetic field generating device 150 generates a first magnetic field A within the reaction region 200. By controlling the height of the magnetic field generating device 150 above the substrate 100 in the vertical direction, the magnetic field direction and magnetic field strength of the first magnetic field A above the substrate 100 can be adjusted. That is, the distribution of the vertical and horizontal components of the magnetic field strength of the first magnetic field A is adjustable. According to the fact that charged particles will move in a spiral motion along the magnetic field lines, the larger the horizontal component, the more the magnetic field lines bend outward, which can cause more charged particles to move towards the edge of the substrate 100. On the other hand, the vertical component can cause electrons and charged particles to move to one side of the upper and lower electrodes and annihilate, thereby reducing the concentration of charged particles in the plasma in the central region. In some embodiments, by adjusting the magnetic field strength of the first magnetic field A so that the vertical component of the magnetic field strength is greater than the horizontal component of the magnetic field strength, and the N pole of the first magnetic field A points towards the substrate 100, it ensures that most charged particles continue to etch the surface of the substrate 100 in the vertical direction, while also finely adjusting the distribution of some charged particles to the edge region of the substrate 100. In other embodiments, the N pole of the first magnetic field A may also point towards the upper electrode, so that the charged particles move in the opposite direction to reduce the plasma concentration in the central region.

[0054] Specifically, in this embodiment, the moving ring 140 is located between the sidewalls of the reaction region 200 and the reaction chamber 110. The magnetic field generating device 150 is disposed on the moving ring 140, allowing it to be closer to the reaction region 200. This enables it to better generate the first magnetic field A within the reaction region 200. Simultaneously, the magnetic field generating device 150 rises and falls with the moving ring 140, avoiding unnecessary interruption of the position between the magnetic field generating device 150 and the transfer port 111. This ensures the circumferential integrity of the magnetic field generating device 150 without affecting the transfer of the substrate 100, maximizing the uniformity of the circumferential plasma distribution. More specifically, the magnetic field generating device 150 can be completely embedded within the moving ring 140, preventing it from being corroded or contaminated by plasma and reaction byproducts, thus ensuring its service life. The vertical distance from the magnetic field generating device 150 to the spray head 130 can be equal to the vertical distance from the magnetic field generating device 150 to the base 120, so that the first magnetic field A generated by the magnetic field generating device 150 in the reaction region 200 is symmetrical vertically, thereby more effectively controlling the distribution of plasma in the reaction region 200, but the present invention is not limited thereto.

[0055] In some embodiments, the magnetic field generating device 150 may also be fixedly disposed on the outer side wall (i.e., the side wall of the moving ring away from the reaction region) or the inner side wall (i.e., the side wall of the moving ring close to the reaction region) of the moving ring 140, but the present invention is not limited thereto.

[0056] Specifically, in this embodiment, the magnetic field generating device 150 can be a ring surrounding the reaction region 200, so that the first magnetic field A can cover the entire reaction region 200, thereby ensuring a more uniform plasma distribution along its circumference within the reaction region 200. More specifically, the horizontal magnetic field strength of the first magnetic field A gradually increases from the center region to the edge region of the substrate 100. Under the action of the first magnetic field A, the plasma in the reaction region 200 will move from the center region to the edge region of the substrate 100, increasing the plasma distribution density at the edge region of the substrate 100. This makes the plasma distribution in the center and edge regions of the substrate 100 more uniform, thereby ensuring the etching uniformity of the substrate 100.

[0057] Furthermore, since the vertical component of the magnetic field strength of the first magnetic field A is greater than the horizontal component, the first magnetic field A can be considered as a vertical magnetic field. Therefore, the collimated plasma within the reaction region 200 can maintain its original etching direction and reach the surface of the substrate 100 perpendicularly, while the non-collimated plasma can spirally advance around the approximately perpendicular magnetic field lines of the first magnetic field A to the surface of the substrate 100. This changes the etching direction of the non-collimated plasma, allowing it to reach the surface of the substrate 100 perpendicularly as well, thereby improving the collimation of the plasma and preventing tilting of the etched trenches on the substrate 100. Simultaneously, the first magnetic field A can also change the etching rate of the plasma, ensuring that the plasma reaches the surface of the substrate 100 at the same etching rate, thus etching the substrate 100 to the same degree and further guaranteeing the etching uniformity of the substrate 100. However, this invention is not limited to this.

[0058] Please continue to refer to this. Figure 1 The magnetic field generating device 150 includes a ring composed of several arc segments; and the magnetic field strength generated by each arc segment is adjustable.

[0059] Specifically, in this embodiment, considering that the degree of non-uniformity of plasma distribution at different locations within the reaction region 200 may vary, the magnetic field generating device 150 may be composed of several arc segments surrounding the reaction region 200, so as to individually adjust the plasma distribution concentration at the corresponding location by adjusting the magnetic field strength of each arc segment, thereby ensuring uniform plasma distribution throughout the entire reaction region 200, and thus ensuring the etching uniformity of the substrate. However, the present invention is not limited thereto.

[0060] Please continue to refer to this. Figure 1 The magnetic field generating device 150 includes a permanent magnet.

[0061] Specifically, in this embodiment, the permanent magnet can be a ring-shaped permanent magnet, and the permanent magnet is divided into upper and lower parts, wherein the upper part is the N pole and the lower part is the S pole, so that the N pole of the first magnetic field generated by the magnetic field generating device 150 points to the substrate 100. However, the present invention is not limited thereto. In other embodiments, the permanent magnet can also be multiple independent bar magnets arranged in a ring.

[0062] In some embodiments, the magnetic field generating device 150 includes a coil. In this case, a wire can be provided inside the lifting rod 160, and the coil is connected to a power source outside the reaction chamber 110 through the wire, so that current flows through the coil, thereby generating the first magnetic field A in the reaction region 200. Alternatively, the coil can be connected to a power source outside the reaction chamber 110 through an independent wire, and a filter is provided between the coil and the power source to filter out radio frequency signals in the wire, thereby ensuring the safety of the power supply. However, the present invention is not limited thereto.

[0063] Please continue to refer to this. Figure 1 The plasma processing device further includes an auxiliary magnetic field adjustment device 170, which is disposed above the reaction region 200 and located on the periphery of the reaction region 200.

[0064] It is understood that the top of the reaction chamber 110 is provided with a mounting base plate 132 for fixing the spray head 130; and the auxiliary magnetic field adjustment device 170 is disposed above the mounting base plate 132, or can be directly disposed inside the mounting base plate 132.

[0065] It is understood that the auxiliary magnetic field adjustment device 170 generates a second magnetic field B in the reaction region 200; the horizontal component of the magnetic field strength of the second magnetic field B is greater than the vertical component of the magnetic field strength, and the N pole of the second magnetic field B points to the inner wall of the moving ring 140.

[0066] Specifically, in this embodiment, the auxiliary magnetic field adjustment device 170 can be an energized coil or a ring-shaped permanent magnet; and the auxiliary magnetic field adjustment device 170 can be disposed outside the reaction chamber 110, fixed to the top of the reaction chamber 110 and located on the periphery of the reaction region 200, so that the second magnetic field B generated by the auxiliary magnetic field adjustment device 170 can also cover the entire reaction region 200, thereby ensuring that the plasma in the reaction region 200 is more evenly distributed along its circumference.

[0067] More specifically, since the horizontal component of the magnetic field strength of the second magnetic field B is greater than the vertical component, the second magnetic field B can be considered a horizontal magnetic field. Therefore, the plasma within the reaction region 200 will move from the center region to the edge region of the substrate 100 under the influence of the second magnetic field B, thereby making the plasma distribution in the center and edge regions of the substrate 100 more uniform, thus ensuring the etching uniformity of the substrate 100. Simultaneously, the magnetic field strength of the second magnetic field B gradually weakens along the direction from the spray head 130 to the base 120, so that the second magnetic field B will not cause excessive interference to the first magnetic field A. This avoids the second magnetic field B having an adverse effect when the first magnetic field A adjusts the plasma etching direction and rate, thus ensuring the adjustment effect of the first magnetic field A on the plasma etching direction and rate. Preferably, the auxiliary magnetic field adjustment device 170 can also be composed of several arc segments, but the present invention is not limited thereto.

[0068] Please continue to refer to this. Figure 2 The plasma processing apparatus further includes: a coordination adjustment device, which is disposed around the base 120 and located outside the reaction region; the coordination adjustment device is used to cooperate with the magnetic field generating device 150 and / or the auxiliary magnetic field adjustment device 170 to adjust the plasma distribution concentration, etching direction, and rate within the reaction region 200. Preferably, the coordination adjustment device is a ring-shaped permanent magnet.

[0069] Specifically, in this embodiment, the mating adjustment device includes: a first mating adjustment component 181, which is fixedly disposed within the constraint ring 112 and located outside the reaction region 200; and a second mating adjustment component 182, which is fixedly disposed below the constraint ring 112 and located outside the reaction region 200. Since the plasma is confined within the reaction region 200 by the constraint ring 112 and the lowered moving ring 140, the first mating adjustment component 181 and the second mating adjustment component 182 will not be corroded or contaminated by the plasma, thereby ensuring the service life of the first mating adjustment component 181 and the second mating adjustment component 182. More specifically, both the first adjusting component 181 and the second adjusting component 182 are toroidal permanent magnets, and both the first adjusting component 181 and the second adjusting component 182 can cooperate with the magnetic field generating device 150 and / or the auxiliary magnetic field adjusting device 170 to adjust the distribution concentration, etching direction and rate of plasma in the reaction region 200, thereby improving the adjustment efficiency of plasma in the reaction region 200, and thus ensuring the etching uniformity and preparation efficiency of the substrate, but the present invention is not limited thereto.

[0070] Specifically, in this embodiment, the first adjusting component 181 and the second adjusting component 182 can be staggered in the horizontal direction, so that the adjustment ranges of the first adjusting component 181 and the second adjusting component 182 do not completely overlap. This allows them to work with the magnetic field generating device 150 and / or the auxiliary magnetic field adjusting device 170 to adjust the plasma distribution concentration, etching direction, and rate over a larger range. Preferably, the first adjusting component 181 is located between the base 120 and the moving ring 150, and the second adjusting component 182 is located between the first adjusting component 181 and the moving ring 150, but the present invention is not limited thereto.

[0071] In addition, in this embodiment, an exhaust pump 113 is provided below the reaction chamber 110 to discharge reaction byproducts from the reaction chamber 110 and maintain a vacuum environment in the reaction chamber 110. An electrostatic chuck 114 supporting the substrate 100 is provided above the base 120. An electrostatic electrode is provided inside the electrostatic chuck 114 to generate electrostatic attraction, thereby supporting and fixing the substrate 100 during the process. A heating device is provided below the electrostatic chuck 114 to control the temperature of the substrate 100 during the process. A focusing ring 115 and an edge ring 116 are provided around the base 120. The focusing ring 115 and the edge ring 116 are used to adjust the electric field or temperature distribution around the substrate 100, improving the etching uniformity of the substrate 100. The distance between the base 120 and the spray head 130 is not less than 35 mm, so as to be able to etch high aspect ratio trenches on the substrate 100; preferably, the distance between the electrostatic chuck 114 and the spray head 130 is greater than 40 mm, but the present invention is not limited thereto.

[0072] On the other hand, combined with the appendix Figure 3 As shown, this embodiment also provides a method of using the plasma processing device as described above, including: step S1, raising the moving ring 140 to a high position to place the substrate 100 on the base 120; step S2, lowering the moving ring 140 to a low position to surround the reaction region 200; step S3, introducing process gas into the reaction region 200 through the spray head 130 to form plasma; step S4, generating a first magnetic field A in the reaction region 200 using the magnetic field generating device 150 to change the direction and rate of plasma etching and to make the plasma distribution in the reaction region 200 uniform; step S5, raising the moving ring 140 to the high position to remove the etched substrate from the base 120.

[0073] It is understood that the method of using the plasma processing device further includes: step S6, setting an auxiliary magnetic field adjustment device 170 above the reaction region 200; step S7, causing the auxiliary magnetic field adjustment device 170 to generate a second magnetic field B in the reaction region 200 so that the plasma is evenly distributed.

[0074] In some embodiments, the method of using the plasma processing device further includes: step S8, setting a matching adjustment device around the base 120; step S9, making the matching adjustment device work in conjunction with the magnetic field generating device 150 and / or the auxiliary magnetic field adjustment device 170 to adjust the distribution concentration, etching direction and rate of plasma in the reaction region 200.

[0075] Specifically, in this embodiment, in steps S1 and S2, the rising and falling of the moving ring 140 can be controlled by the lifting rod 160 and the driving mechanism; in step S7, the second magnetic field B mainly causes the plasma in the reaction region 200 to move from the center region of the substrate 100 to the edge region, thereby assisting the first magnetic field A in adjusting the uniformity of the plasma distribution in the reaction region 200, but the present invention is not limited thereto.

[0076] In summary, this embodiment provides a plasma processing apparatus and method of use. A base disposed inside the reaction chamber supports the substrate. A spray head disposed opposite the base can introduce process gas into the reaction area between the base and the spray head to form plasma. A magnetic field generator disposed on a moving ring can rise and fall with the moving ring. When the moving ring is at a low position, the magnetic field generator surrounds the reaction area to generate a first magnetic field within the reaction area, changing the direction and rate of plasma etching and making the plasma distribution within the reaction area uniform, thereby ensuring the etching uniformity of the substrate and improving the substrate yield. In this embodiment, the horizontal component of the magnetic field strength of the first magnetic field gradually increases from the center region to the edge region of the substrate. Under the action of the first magnetic field, the plasma in the reaction area moves from the center region to the edge region of the substrate, making the plasma distribution in the center region and the edge region of the substrate tend to be uniform, thereby ensuring the etching uniformity of the substrate. Furthermore, the vertical component of the magnetic field strength of the first magnetic field is greater than the horizontal component, making it essentially a vertical magnetic field. This allows collimated plasma within the reaction region to maintain its original etching direction perpendicular to the substrate surface, while non-collimated plasma can spiral around the approximately perpendicular magnetic field lines of the first magnetic field to reach the substrate surface. This improves plasma collimation and prevents tilting of the etched trenches on the substrate. Simultaneously, the first magnetic field can also alter the plasma etching rate, optimizing the concentration of charged particles in different regions and balancing the etching rates across them. This ensures that the substrate surface is etched to approximately the same degree, further guaranteeing the uniformity of the etching process.

[0077] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A plasma processing device, characterized in that, include: reaction chamber; A base, disposed inside the reaction chamber, is used to support the substrate; A spray head is disposed inside the reaction chamber opposite to the base, and is used to introduce process gas into the reaction area between the base and the spray head to form plasma; A movable ring that can move up and down between a high position and a low position, wherein, in the low position, the movable ring is arranged around the reaction region; as well as A magnetic field generating device is disposed on the moving ring and rises and falls with the moving ring. When the moving ring is in the low position, the magnetic field generating device surrounds the reaction area. The cross-section of the magnetic field generating device is annular.

2. The plasma processing apparatus as described in claim 1, characterized in that, The magnetic field generating device is fixedly installed inside the moving ring.

3. The plasma processing apparatus as described in claim 1, characterized in that, The magnetic field generating device is fixedly installed on the outer or inner side wall of the moving ring.

4. The plasma processing apparatus as described in claim 1, characterized in that, The magnetic field generating device includes a ring composed of several arc segments; and the magnetic field strength generated by each arc segment is adjustable.

5. The plasma processing apparatus as described in claim 1, characterized in that, The magnetic field generating device includes a permanent magnet.

6. The plasma processing apparatus as described in claim 1, characterized in that, The magnetic field generating device includes a coil.

7. The plasma processing apparatus as described in claim 6, characterized in that, Also includes: A lifting rod is connected to the moving ring and is used to drive the moving ring to rise and fall; the lifting rod is provided with a wire, and the coil is connected to a power source outside the reaction chamber through the wire.

8. The plasma processing apparatus as described in claim 1, characterized in that, The magnetic field generating device generates a first magnetic field within the reaction region; the vertical component of the magnetic field strength of the first magnetic field is greater than the horizontal component of the magnetic field strength.

9. The plasma processing apparatus as described in claim 8, characterized in that, The magnetic field strength of the first magnetic field gradually increases along the direction from the center region to the edge region of the substrate.

10. The plasma processing apparatus as claimed in claim 1, characterized in that, Also includes: An auxiliary magnetic field adjustment device is disposed above the reaction region and located on the periphery of the reaction region.

11. The plasma processing apparatus as claimed in claim 10, characterized in that, The auxiliary magnetic field adjustment device is an energized coil or a ring-shaped permanent magnet.

12. The plasma processing apparatus as claimed in claim 10, characterized in that, The top of the reaction chamber is provided with a mounting base plate for fixing the spray head; and the auxiliary magnetic field adjustment device is disposed above the mounting base plate.

13. The plasma processing apparatus as claimed in claim 10, characterized in that, The auxiliary magnetic field adjustment device generates a second magnetic field within the reaction region; the horizontal component of the magnetic field strength of the second magnetic field is greater than the vertical component of the magnetic field strength.

14. The plasma processing apparatus as claimed in claim 10, characterized in that, Also includes: The adjustment device is arranged around the base and located on the periphery of the reaction area.

15. The plasma processing apparatus as described in claim 14, characterized in that, The adjustment device is a ring-shaped permanent magnet.

16. A method of using the plasma processing apparatus as described in any one of claims 1 to 15, characterized in that, include: Raise the moving ring to a high position to place the substrate on the base; The moving ring is lowered to a low position to surround the reaction region; Process gas is introduced into the reaction zone through the spray head to form plasma; The magnetic field generating device generates a first magnetic field in the reaction region to change the direction and rate of plasma etching and to make the plasma distribution in the reaction region uniform. The moving ring is raised to the high position to remove the etched substrate from the base.

17. The method of using the plasma processing apparatus as described in claim 16, characterized in that, Also includes: An auxiliary magnetic field adjustment device is provided above the reaction region; The auxiliary magnetic field adjustment device generates a second magnetic field in the reaction region to make the plasma distribution in the reaction region uniform.

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