一种具有布拉格光栅结构的铒镱共掺聚合物波导光放大器及其制备方法
By using an erbium-ytterbium co-doped polymer waveguide optical amplifier with Bragg grating structures at both ends of the optical waveguide, the problem of large wafer area occupied by the increased device size in traditional structures is solved, achieving high gain performance on a small chip and improving the integration and gain performance of the optical waveguide amplifier.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JILIN UNIVERSITY
- Filing Date
- 2024-01-25
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional rectangular-channel erbium-ytterbium co-doped nanoparticle polymer optical solids and polymer device mass structures of erbium-ytterbium co-doped optical waveguide amplifiers increase in size and occupy a large wafer area as the length of the amplification region increases, making it difficult to meet the high integration requirements of on-chip integration.
The erbium-ytterbium co-doped polymer waveguide optical amplifier with Bragg grating structure enables signal light to travel back and forth in the gain region by setting Bragg gratings at both ends of the optical waveguide, thereby increasing the length of the amplification region and achieving high gain performance on a small chip.
A high-gain optical waveguide amplifier on a small-sized chip has been realized, which features simple process, low cost, high integration with silicon-based optical devices, and high gain per unit length, resulting in a significant improvement in gain performance.
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Figure CN117891109B_ABST