Substrate processing apparatus and method

Abstract

The application provides a substrate processing device, which comprises a reaction chamber, the reaction chamber comprises a chamber body, an upper chamber cover and a lower chamber cover, a process gas inlet and an outlet are oppositely arranged on the side of the chamber body, the reaction chamber further comprises an upper bushing and a lower bushing which are located on the inner side wall of the chamber body; a first channel for injecting a purge gas is further arranged on the chamber body, and a first uniform gas structure is arranged on the top surface of the upper bushing; the purge gas is injected into the first uniform gas structure through the first channel for uniform gas distribution, and the gas flow along the upper chamber cover is sprayed from the gap between the upper bushing and the upper chamber cover after uniform gas distribution. The application further provides a substrate processing method. Through the application, the deposition between the upper bushing and the upper chamber cover is reduced, the deposition of the upper chamber cover is reduced, the utilization rate of the process gas is improved, the uniformity of the process gas flow field distribution is improved, and the yield of the substrate processing is ensured.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a substrate processing apparatus and method. Background Technology

[0002] Chemical vapor deposition (CVD) is a widely used epitaxial growth technique in the semiconductor industry. The process involves delivering a homogeneous mixture of process gases into a reaction chamber, where a chemical reaction generates a solid deposit that is then deposited onto a substrate (or wafer) to grow an epitaxial layer. During epitaxial growth, to ensure the uniformity of the epitaxial layer thickness, the gas flow field within the reaction chamber must be strictly controlled. The mixed gas flow through the substrate must be as uniform as possible to guarantee uniform growth of the epitaxial layer across different regions of the substrate.

[0003] Substrate processing equipment typically includes a reaction chamber, an inlet gas system, and an exhaust gas system. The reaction chamber is enclosed by side walls, an upper chamber cover, and a lower chamber cover. The upper and lower chamber covers can be flat or roughly dome-shaped, and are usually made of a highly transparent quartz material. During substrate processing, heating lamps located above the upper chamber cover and / or below the lower chamber cover bring the substrate to the required high temperature. The inlet gas system and exhaust gas system are located at different positions on the side walls of the reaction chamber.

[0004] The reaction chamber also includes upper and lower bushings disposed on the inner sidewalls to prevent the process gas from reacting with the inner surfaces of the sidewalls of the reaction chamber (which are typically made of metal materials such as stainless steel or aluminum). The upper and lower bushings may be made of non-reactive materials such as quartz.

[0005] During operation, the process gas, obtained by mixing various reactive gases and carrier gases, flows into the reaction chamber through an inlet device. Then, the process gas flows above the substrate surface, thereby depositing a film on the substrate surface. Finally, the process gas flows out of the reaction chamber through an exhaust pipe.

[0006] Because gaps inevitably exist between the upper chamber cover and the upper bushing, and between the lower chamber cover and the lower bushing, reactive gases diffuse into these gaps and undergo chemical reactions, producing deposits between these gaps. Over time, these deposits flake off and cause particulate contamination of the reaction chambers. This particulate contamination can create defects on the substrate surface, affecting the substrate yield.

[0007] On the other hand, the process gas input into the reaction chamber diffuses upwards and flows along the inner surface of the upper chamber cover. Therefore, the flow rate of the process gas on the substrate surface decreases, resulting in low effective utilization of the process gas and making it prone to deposit formation on the upper chamber cover. These deposits not only contaminate the reaction chamber but also reduce the light transmittance of the upper chamber cover, causing heat loss from the heating lamp and affecting the heating effect on the substrate. To improve the substrate yield, the frequency of reaction chamber cleaning and maintenance needs to be increased, significantly impacting substrate processing efficiency. Summary of the Invention

[0008] The purpose of this invention is to provide a substrate processing apparatus and method. In this invention, a first gas-uniforming structure is provided on the top surface of the upper bushing for uniformly injecting purge gas flowing along the upper chamber cover into the reaction chamber through the gap between the upper bushing and the upper chamber cover. In this invention, a second gas-uniforming structure can also be provided on the bottom surface of the lower bushing for uniformly injecting purge gas flowing along the lower chamber cover into the reaction chamber through the gap between the lower bushing and the lower chamber cover. This invention not only prevents process gas deposition in the gap between the upper bushing and the upper chamber cover but also significantly reduces deposits on the upper and lower chamber covers, effectively reducing particulate contamination within the reaction chamber. This invention improves the light transmittance of the upper and lower chamber covers while ensuring the heating effect of the substrate. Simultaneously, the purge gas flowing along the upper chamber cover can also press the process gas above the substrate towards the substrate surface, improving the utilization rate of the process gas and making the gas flow field more uniform, ensuring the deposition effect of the thin film on the substrate surface and improving the yield of substrate production.

[0009] To achieve the above objectives, the present invention provides a substrate processing apparatus for depositing a thin film on a substrate. The substrate processing apparatus includes a reaction chamber, which includes a chamber body, an upper chamber cover, and a lower chamber cover. A process gas inlet and an outlet are provided on the side of the chamber body. The reaction chamber also includes an upper bushing and a lower bushing located on the inner sidewall of the chamber body.

[0010] The main body of the chamber is also provided with a first channel for injecting purge gas, and the top surface of the upper bushing is provided with a first gas equalization structure; the purge gas is injected into the first gas equalization structure through the first channel for gas equalization, and after gas equalization, the gas flow is ejected from the gap between the upper bushing and the upper chamber cover and flows along the upper chamber cover.

[0011] Optionally, the first air distribution structure includes a through annular first air inlet groove, which is formed on the outer periphery of the top surface of the upper bushing.

[0012] Optionally, the outer periphery of the top surface of the upper bushing is a horizontal surface; the first air inlet groove is flush with the outlet of the first channel.

[0013] Optionally, the first air distribution structure further includes a plurality of first ventilation slots distributed along the circumferential direction of the upper bushing, the first ventilation slots being connected to the first air inlet air distribution slot.

[0014] Optionally, the projection of the first vent groove onto the horizontal plane extends along the radial direction of the upper bushing.

[0015] Optionally, the top surface of the upper bushing also has a first annular slope; from bottom to top, the first annular slope gradually tapers inward; the outer periphery of the top surface of the upper bushing surrounds the outer periphery of the bottom of the first annular slope; at least a portion of the first vent groove is distributed on the first annular slope.

[0016] Optionally, the first gas equalization structure further includes at least one through annular first gas equalization groove distributed on the first annular inclined surface, and the first air inlet gas equalization groove and the first gas equalization groove are connected through the first air passage groove.

[0017] Optionally, the first air-equalizing groove closest to the inner wall of the upper bushing is spaced apart from the top of the first annular inclined surface.

[0018] Optionally, the top of the first venting groove does not extend above the first air equalization groove closest to the inner wall of the upper bushing.

[0019] Optionally, the chamber body is further provided with a second channel for injecting purge gas, which is injected into the gap between the lower bushing and the lower chamber cover through the second channel.

[0020] Optionally, the bottom surface of the lower bushing is provided with a second air distribution structure, the second air distribution structure including a through annular second air inlet and air distribution groove; the second air inlet and air distribution groove is opened at the outer periphery of the bottom surface of the lower bushing.

[0021] Optionally, the outer periphery of the bottom surface of the lower bushing is a horizontal surface; the second air inlet groove is flush with the outlet of the second channel.

[0022] Optionally, the second air distribution structure further includes a plurality of second air vents distributed along the circumferential direction of the lower bushing, the second air vents being connected to the second air inlet air distribution vent.

[0023] Optionally, the projection of the second vent groove in the horizontal plane extends along the radial direction of the lower bushing.

[0024] Optionally, the bottom surface of the lower bushing also has a second annular slope; from top to bottom, the second annular slope gradually tapers inward; the outer periphery of the bottom surface of the lower bushing surrounds the outer periphery of the top of the second annular slope; at least a portion of the second vent groove is distributed on the second annular slope.

[0025] Optionally, the second gas equalization structure further includes at least one through annular second gas equalization groove distributed on the second annular inclined surface, which is connected to the second air inlet gas equalization groove and the second gas equalization groove through the second air passage groove.

[0026] Optionally, the second air-regulating groove closest to the inner wall of the lower bushing is spaced apart from the bottom end of the second annular inclined surface.

[0027] Optionally, the bottom end of the second venting groove does not extend from below the second air equalization groove closest to the inner wall of the lower bushing.

[0028] Optionally, the number of at least one of the first and second ventilation slots shall not be less than 30.

[0029] Optionally, the width of the first air inlet uniform groove, the first air uniform groove, the first ventilation groove, the second air inlet uniform groove, the second air uniform groove, and the second ventilation groove is 1mm to 5mm, and the depth is 1mm to 3mm.

[0030] Optionally, the purging gas may include one or more of nitrogen, hydrogen, and inert gases.

[0031] The present invention also provides a substrate processing method for use in the substrate processing apparatus as described in the present invention, the method comprising:

[0032] During the substrate processing process in the reaction chamber of the substrate processing equipment, process gas is injected into the reaction chamber through the process gas inlet; at the same time, purge gas is injected into the reaction chamber through the first channel, or through the first channel and the second channel.

[0033] Optionally, the method further includes:

[0034] During periods when no substrate processing is being performed in the reaction chamber of the substrate processing apparatus, purge gas is injected into the reaction chamber through at least one of the first and second channels.

[0035] Compared with the prior art, the beneficial effects of the substrate processing equipment and method of the present invention are as follows:

[0036] 1) In this invention, a first gas equalization structure is provided on the top surface of the upper bushing, and a first channel for injecting purge gas into the first gas equalization structure is provided on the main body of the chamber. After being equalized by the first gas equalization structure, the purge gas is injected into the reaction chamber from the gap between the upper bushing and the upper chamber cover, and flows along the upper chamber cover. This invention can prevent process gas from flowing into the gap between the upper bushing and the upper chamber cover, avoiding the deposition of process gas in this gap. At the same time, this invention also greatly reduces the deposits on the upper chamber cover, effectively reducing particulate contamination in the reaction chamber and improving the yield of substrate processing.

[0037] 2) The purge gas flowing along the upper chamber cover can also press the process gas above the substrate towards the substrate surface, which not only improves the utilization rate of the process gas, but also makes the process gas flow more uniform and gentle, greatly improving the uniformity of thin film deposition on the substrate surface and the yield of substrate production. Through the first gas uniformity structure, the purge gas injected into the reaction chamber from all azimuth angles between the upper bushing and the upper chamber cover has the same flow rate and pressure, and will not cause turbulence in the process gas.

[0038] 3) In this invention, a second gas equalization structure is also provided on the bottom surface of the lower bushing, and a second channel for injecting purge gas into the second gas equalization structure is provided on the main body of the chamber. After being equalized by the second gas equalization structure, the purge gas is injected into the reaction chamber from the gap between the lower bushing and the lower chamber cover, and flows along the lower chamber cover. This invention can prevent process gas from diffusing into the gap between the lower bushing and the lower chamber cover, effectively avoiding the deposition of process gas in this gap. This invention also greatly reduces the deposits on the lower chamber cover, further reducing particulate contamination in the reaction chamber and improving the yield of substrate processing.

[0039] 4) By reducing particulate contaminants in the reaction chamber, this invention also greatly reduces the frequency of opening the reaction chamber for cleaning, which not only saves production costs but also improves the efficiency of substrate processing.

[0040] 5) This invention improves the light transmittance of the upper and lower chamber covers by reducing deposits on them. This invention not only ensures the heating effect of the substrate but also guarantees the accuracy of the collected substrate surface temperature, thus effectively controlling the substrate surface temperature to grow a thin film of the required quality on the substrate surface. Attached Figure Description

[0041] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0042] Figure 1 This is a schematic diagram of the substrate processing equipment in Embodiment 1 of the present invention;

[0043] Figure 2 This is a schematic diagram of the first air-uniform structure on the top surface of the upper bushing in one embodiment of the present invention;

[0044] Figure 3 This is a schematic diagram of the upper bushing in Embodiment 1 of the present invention;

[0045] Figure 4This is a schematic diagram of the first air-uniform structure on the top surface of the upper bushing in Embodiment 1 of the present invention;

[0046] Figure 5 This is a schematic diagram of the substrate processing equipment in Embodiment 2 of the present invention;

[0047] Figure 6 This is a schematic diagram of the second air-uniform structure on the bottom surface of the lower bushing in Embodiment 2 of the present invention;

[0048] Figure 7 This is a schematic diagram of the second air-uniform structure on the bottom surface of the lower bushing, as shown in another embodiment of the present invention. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0050] Example 1

[0051] Figure 1 This is a cross-sectional schematic diagram of the substrate processing apparatus 10 in this embodiment. Figure 1 As shown, the substrate processing equipment 10 includes a reaction chamber 100, a chamber body 101, a preheating ring 104, a base 105, a process gas inlet 113, and a process gas outlet 115.

[0052] Substrate processing equipment 10 is used to deposit thin films on substrate W. For example... Figure 1 As shown, the reaction chamber 100 is enclosed by a chamber body 101, an upper chamber cover 102, and a lower chamber cover 103, which substantially define the internal region of the reaction chamber 100. The upper chamber cover 102 and the lower chamber cover 103 may be flat or have a generally dome shape.

[0053] The process gas inlet 113 is located at one end of the reaction chamber 100, and the process gas outlet 115 is located at the other end of the reaction chamber 100 opposite to the process gas inlet 113. It should be noted that... Figure 1 The positions of the process gas inlet 113 and the process gas outlet 115 are merely examples and are not intended to limit the invention.

[0054] like Figure 1As shown, the base 105 is used to support the substrate W, and the preheating ring 104 is arranged around the periphery of the base 105 to heat the process gas before it comes into contact with the substrate W. Both the preheating ring 104 and the base 105 are generally opaque to absorb the radiant heating light generated by the infrared heating lamp assembly 106 located above and below the reaction chamber. In this embodiment of the invention, the preheating ring 104 and the base 105 can be made of either silicon carbide or silicon carbide-coated graphite.

[0055] The infrared heating lamp assembly 106 can be used to provide heat to the reaction chamber 100, so that the preheating ring 104 and the base 105 are maintained at the temperature required for the reaction. The power of the infrared heating lamp assembly 106 is controlled by a controller (not shown in the figure) based on the temperature obtained by the infrared thermometer 109. Figure 1 The shape and arrangement of the mid-infrared heating lamp group 106 are merely examples and should not be construed as limiting the invention. To ensure uniform temperature within the reaction chamber, or to achieve temperature control in localized areas within the reaction chamber, the invention may also use linear heating lamps of varying lengths, or non-linear irregularly shaped heating lamps. Multiple heating lamps may also be grouped and arranged into a lamp array.

[0056] When the base 105 is in the processing position (the substrate W on the base 105 has approximately the same height as the preheating ring 104), the base 105 divides the internal space of the reaction chamber 100 into an upper region and a lower region. The upper region is located above the base, and the lower region is located below the base.

[0057] During the substrate W processing, the substrate 105 is located in the processing position, and the process gas flows into the upper region through the process gas inlet 113; then, the process gas flows above the substrate surface to achieve the growth of a thin film on the substrate surface; finally, the residual process gas and by-products are discharged through the process gas outlet 115. Figure 1 The diagram shows the flow rate of the process gas, a.

[0058] like Figure 1 As shown, the substrate processing apparatus 10 also includes a purge gas inlet 116. During substrate processing, purge gas flows into the lower region through the purge gas inlet 116. The flow of the purge gas suppresses the entry of process gas into the lower region. In some cases, purge gas is also introduced into the reaction chamber even when substrate processing is not performed. In this embodiment, the purge gas includes one or more of nitrogen, hydrogen, and inert gases.

[0059] like Figure 1As shown, an upper bushing 120 and a lower bushing 130 are also provided on the inner sidewall of the chamber body 101 to prevent the process gas from reacting with the chamber body 101 (which is usually made of a metal material such as aluminum or stainless steel). The upper bushing 120 and the lower bushing 130 may be made of a non-reactive material such as quartz.

[0060] A gap inevitably exists between the upper chamber cover 102 and the upper bushing 120. Once process gases diffuse into this gap, deposits can easily form. Over time, these deposits detach and cause particulate contamination within the reaction chamber, affecting the substrate processing yield. To reduce particulate contamination within the reaction chamber, it is necessary to frequently open the chamber for cleaning, which significantly reduces the efficiency of substrate processing.

[0061] like Figure 1 As shown, the substrate processing apparatus 10 in this embodiment has a first channel 117 (whose inlet is connected to an external purge gas source) on one side of the chamber body 101, and a first gas equalization structure is provided on the top surface of the upper bushing 120. Purge gas is injected into the first gas equalization structure through the first channel 117 for gas equalization. After equalization, the gas flow c, flowing along the upper chamber cover 102, is ejected from the gap between the upper bushing 120 and the upper chamber cover 102. This prevents process gas from depositing in the gap between the upper chamber cover 102 and the upper bushing 120, and reduces the frequency of cleaning the reaction chamber, thereby avoiding the aforementioned adverse consequences. It should be understood that... Figure 1 The position and structure of the first channel 117 are merely examples and are not intended to limit the invention. Any channel structure capable of injecting purge gas into the first gas equalization structure can be applied to the invention.

[0062] like Figure 2 As shown, in this embodiment, the outer periphery 1204 of the top surface of the upper bushing 120 is a horizontal surface. The top surface of the upper bushing 120 also has a first annular inclined surface 1205, and the outer periphery 1204 of the top surface of the upper bushing surrounds the outer periphery of the bottom of the first annular inclined surface. From bottom to top, the first annular inclined surface 1205 gradually tapers inward.

[0063] like Figures 2 to 4 As shown, the first gas equalization structure includes a through annular first air inlet equalization groove 1201 and multiple first ventilation grooves 1202. It should be noted that the first gas equalization structure may only include the first air inlet equalization groove 1201.

[0064] like Figure 2 As shown, the first air inlet uniform distribution groove 1201 is formed on the outer periphery 1204 of the top surface of the upper bushing. Figure 1 As shown, the first air inlet uniform distribution groove 1201 is flush with the outlet of the first channel 117. Figure 3As shown, in this embodiment, a plurality of first venting grooves 1202 are evenly distributed on the first annular inclined surface 1205 along the circumferential direction of the upper bushing 120. The first venting grooves 1202 communicate with the first air inlet uniform groove 1201, and the projection of the first venting grooves 1202 on the horizontal plane extends along the radial direction of the upper bushing 120. Figure 2 As shown, in one embodiment of the present invention, the first venting groove 1202 comprises two connected sections, one section being located at the outer periphery 1204 of the top surface of the upper bushing, and the other section being located on the first annular inclined surface 1205. In a preferred embodiment, the number of first venting grooves 1202 is not less than 30; this is merely an example and not intended to limit the present invention.

[0065] The purging gas in the first inlet gas distribution groove 1201 is guided to the top of the first annular inclined surface 1205 through the first venting groove 1202, ultimately achieving the ejection of airflow c from the gap between the upper bushing 120 and the upper chamber cover 102, flowing along the upper chamber cover 102. Airflow c effectively prevents process gas from entering the gap between the upper bushing 120 and the upper chamber cover 102, avoiding the formation of deposits between them. Therefore, this invention not only improves wafer processing yield but also significantly reduces the frequency of opening the reaction chamber 100 for cleaning, saving production costs and improving substrate processing efficiency.

[0066] In the prior art, due to the absence of airflow c, the process gas injected through the process gas inlet 113 not only flows along the surface of the substrate W but also diffuses upwards. This leads to uneven distribution of the process gas above the substrate, hindering the growth of a uniform thin film on the substrate surface. Furthermore, it reduces the flow rate of the process gas on the wafer surface, lowering the utilization rate of the process gas. Figure 1 As shown, the airflow c can also press the process gas above the substrate towards the substrate surface. This invention not only improves the utilization rate of the process gas but also makes the flow field of the process gas on the substrate surface more uniform and stable, thereby improving the uniformity of thin film deposition on the substrate surface and the yield of substrate production.

[0067] The airflow c can also effectively prevent process gases from diffusing to the upper chamber cover 102, greatly reducing deposits on the upper chamber cover 102. Therefore, the present invention can also improve the light transmittance of the upper chamber cover 102, ensuring the heating effect of the infrared heating lamp group 106 above the reaction chamber on the substrate W, and the accuracy of the temperature value collected by the infrared thermometer 109. The present invention is beneficial for precise temperature control of the substrate W to grow the required thin film on the substrate surface.

[0068] In this embodiment, as Figures 1 to 4As shown, the first gas-uniforming structure further includes at least one first gas-uniforming groove 1203 disposed on the first annular inclined surface 1205. In one embodiment, as... Figure 2 As shown, the top surface of the upper bushing 120 may be provided with three first air-regulating grooves 1203a, 1203b, and 1203c. Furthermore, as... Figure 3 , Figure 4 As shown, the top surface of the upper bushing 120 can also be provided with two first gas equalization grooves 1203a and 1203b. Those skilled in the art can set the number of first gas equalization grooves 1203 according to actual needs. The first gas equalization groove 1203 is connected to the first ventilation groove 1202. The first gas equalization groove 1203 can increase the residence time of the purge gas in the gap between the upper bushing 120 and the upper chamber cover 102, which can effectively prevent the process gas from entering the gap; and make the purge gas entering from the first gas equalization groove 1201 more evenly distributed in the gap formed by the upper bushing 120 and the upper chamber cover 102, which can evenly distribute the pressure and achieve uniform velocity and pressure of the gas ejected from the gap, thus minimizing the impact on the main flow of the process gas.

[0069] In this embodiment, as Figure 3 , Figure 4 As shown, the first gas equalization groove 1203b, closest to the inner wall of the upper bushing, is spaced apart from the top of the first annular inclined surface, and the top of the first venting groove 1202 does not extend from above the first gas equalization groove 1203b. Therefore, the purge gas in the first gas equalization groove 1201 is not directly injected into the reaction chamber through the first venting groove 1202, but is guided through the first venting groove 1202 to the first gas equalization grooves 1203a and 1203b for full diffusion before being injected into the reaction chamber. This ensures that the purge gas injected into the reaction chamber through the first gas equalization structure has the same flow rate and pressure at all azimuth angles, preventing turbulence of the process gas above the substrate surface.

[0070] In this embodiment, the width of the first air inlet uniform groove 1201, the first air uniform groove 1203, and the first ventilation groove 1202 is 1mm to 5mm, and the depth is 1mm to 3mm. This facilitates machining on the top surface of the upper bushing and ensures that the flow rate of the purging gas between the upper bushing 120 and the upper chamber cover 102 meets the requirements.

[0071] Example 2

[0072] Figure 5 This refers to the substrate processing apparatus 20 in this embodiment. For example... Figure 5 As shown, there is an unavoidable gap between the lower chamber cover 203 and the lower bushing 230. Once the process gas diffuses into the gap, it is easy to generate deposits, which will affect the yield of substrate processing and increase the cleaning frequency of the reaction chamber.

[0073] like Figure 5 As shown, in addition to introducing purge gas between the upper bushing and the upper chamber cover, the substrate processing apparatus 20 in this embodiment has a second channel 218 (whose inlet is connected to an external purge gas source) on one side of the chamber body 201, and a second gas equalization structure is provided on the bottom surface of the lower bushing 230. The purge gas is injected into the second gas equalization structure through the second channel 218 for gas equalization. After equalization, the gas flow d, flowing along the lower chamber cover 203, is ejected from the gap between the lower bushing 230 and the lower chamber cover 203. This prevents process gas from depositing in the gap between the lower chamber cover 203 and the lower bushing 230, and reduces the frequency of cleaning the reaction chamber, thereby avoiding the aforementioned adverse consequences. It should be understood that... Figure 5 The position and structure of the second channel 218 are merely examples and are not intended to limit the invention. Any channel structure capable of injecting purge gas into the second gas equalization structure can be applied to the invention.

[0074] like Figure 6 As shown, the outer periphery 2304 of the bottom surface of the lower bushing 230 is a horizontal surface. The bottom surface of the lower bushing 230 also has a second annular inclined surface 2305, and the outer periphery 2304 of the bottom surface of the lower bushing 230 surrounds the outer periphery of the top of the second annular inclined surface. From top to bottom, the second annular inclined surface 2304 gradually tapers inward.

[0075] like Figure 6 , Figure 7 As shown, the second air distribution structure includes a through annular second air inlet distribution groove 2301 and multiple second air passage grooves 2302.

[0076] like Figure 6 As shown, the second air inlet uniform distribution groove 2301 is formed on the outer periphery 2304 of the bottom surface of the lower bushing. For example... Figure 5 As shown, the second air inlet uniform distribution groove 2301 is flush with the outlet of the second channel 218. The second vent groove 2302 connects to the second air inlet uniform distribution groove 2301. In this embodiment, the projection of the second vent groove 2302 on the horizontal plane extends along the radial direction of the lower bushing 230, and the projections of multiple second vent grooves 2302 on the horizontal plane are evenly distributed along the circumferential direction of the lower bushing 230. Figure 6 As shown, in this embodiment, the second vent groove 2302 comprises two connected sections, one section being located at the outer periphery 2304 of the bottom surface of the lower bushing, and the other section being located on the second annular inclined surface 2305. In another embodiment, as... Figure 7 As shown, all of the second venting slots 2302 fall on the second annular inclined surface 2305. In a preferred embodiment, the number of second venting slots 2302 is not less than 30; this is merely an example and not a limitation of the present invention.

[0077] The purging gas in the second air inlet uniform gas distribution groove 2301 is guided to the bottom of the second annular inclined surface 2305 through the second vent groove 2302, such as... Figure 5 As shown, the final result is an airflow d that is ejected from the gap between the lower bushing 230 and the lower chamber cover 203, flowing along the lower chamber cover 203. The airflow d effectively prevents process gases from entering the gap between the lower bushing 230 and the lower chamber cover 203, avoiding the formation of deposits between them. Simultaneously, the airflow d also effectively prevents process gases from diffusing to the lower chamber cover 203, inhibiting the formation of deposits there. This invention not only reduces deposits within the reaction chamber 200 but also improves the light transmittance of the lower chamber cover 203, ensuring the heating effect of the infrared heating lamp assembly 206 below the reaction chamber on the substrate 205, thereby ensuring the heat transferred to the substrate W through the substrate 205. This invention facilitates temperature control of the substrate W to grow a thin film of the required quality on the substrate surface.

[0078] like Figure 5 As shown, the second gas-equalizing structure further includes at least one second gas-equalizing groove 2303 disposed on the second annular inclined surface 2305. Figure 6 , Figure 7 Two second gas equalization grooves 2303a and 2303b are shown. It should be understood that the number of second gas equalization grooves is only an example of the present invention and is not intended to limit the invention. The second gas equalization grooves 2303a and 2303b are connected to the second venting groove 2302. By increasing the residence time of the purge gas in the gap between the lower bushing 230 and the lower chamber cover 203 through the second gas equalization grooves 2303a and 2303b, the process gas can be effectively prevented from entering the gap. Furthermore, the purge gas entering from the second inlet gas equalization groove 2301 is more evenly distributed in the gap formed by the lower bushing 230 and the lower chamber cover 203, which can evenly distribute the pressure and achieve uniform velocity and pressure of the gas ejected from the gap.

[0079] like Figure 6 , Figure 7 As shown, the second gas equalization groove 2303b, closest to the inner wall of the lower bushing, is spaced apart from the bottom end of the second annular inclined surface 2305, and the bottom end of the second venting groove 2302 does not extend from below the second gas equalization groove 2303b. Therefore, the purge gas in the second inlet gas equalization groove 2301 is not directly injected into the reaction chamber through the second venting groove 2302, but is guided through the second venting groove 2302 to each second gas equalization groove 2303 for full diffusion before being injected into the reaction chamber. This ensures that the purge gas injected into the reaction chamber through the second gas equalization structure has the same flow rate and pressure at all azimuth angles, maintaining a stable pressure in the lower region of the reaction chamber 200 and helping to reduce the flow of process gas from the upper region of the reaction chamber 200 into the lower region.

[0080] In this embodiment, the width of the second air inlet uniform groove 2301, the second uniform groove 2303, and the second ventilation groove 2302 is 1mm to 5mm, and the depth is 1mm to 3mm. This facilitates machining on the top surface of the lower bushing and ensures that the flow rate of the purging gas between the lower bushing 230 and the lower chamber cover 203 meets the requirements.

[0081] The present invention also provides a substrate processing method for use in the substrate processing apparatus as described in the present invention, the method comprising:

[0082] During the substrate processing process in the reaction chamber of the substrate processing equipment, process gas is injected into the reaction chamber through the process gas inlet; at the same time, purge gas is injected into the reaction chamber through the first channel, or through the first channel and the second channel.

[0083] The method further includes:

[0084] During periods when no substrate processing is being performed in the reaction chamber of the substrate processing apparatus, purge gas is injected into the reaction chamber through at least one of the first and second channels.

[0085] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A substrate processing apparatus for depositing a thin film on a substrate, characterized in that, The substrate processing equipment includes a reaction chamber, which includes a chamber body, an upper chamber cover, and a lower chamber cover. A process gas inlet and an outlet are provided on the side of the chamber body. The reaction chamber also includes an upper bushing and a lower bushing located on the inner sidewall of the chamber body. The main body of the chamber is also provided with a first channel for injecting purge gas, and the top surface of the upper bushing is provided with a first gas equalization structure; the purge gas is injected into the first gas equalization structure through the first channel for gas equalization, and after gas equalization, the gas flow is ejected from the gap between the upper bushing and the upper chamber cover and flows along the upper chamber cover.

2. The substrate processing apparatus as described in claim 1, characterized in that, The first air distribution structure includes a through annular first air inlet and distribution groove, which is formed on the outer periphery of the top surface of the upper bushing.

3. The substrate processing apparatus as described in claim 2, characterized in that, The outer periphery of the top surface of the upper bushing is a horizontal surface; the first air inlet groove is flush with the outlet of the first channel.

4. The substrate processing apparatus as described in claim 2, characterized in that, The first air distribution structure further includes a plurality of first ventilation slots distributed along the circumferential direction of the upper bushing, and the first ventilation slots are connected to the first air inlet air distribution slot.

5. The substrate processing apparatus as described in claim 4, characterized in that, The projection of the first vent groove onto the horizontal plane extends along the radial direction of the upper bushing.

6. The substrate processing apparatus as described in claim 5, characterized in that, The top surface of the upper bushing also has a first annular slope; from bottom to top, the first annular slope gradually tapers inward; the outer periphery of the top surface of the upper bushing surrounds the outer periphery of the bottom of the first annular slope; at least a portion of the first vent groove is distributed on the first annular slope.

7. The substrate processing apparatus as described in claim 6, characterized in that, The first gas equalization structure further includes at least one through annular first gas equalization groove distributed on the first annular inclined surface, and the first air inlet gas equalization groove and the first gas equalization groove are connected through the first air passage groove.

8. The substrate processing apparatus as described in claim 7, characterized in that, The first air distribution groove, which is closest to the inner wall of the upper bushing, is spaced apart from the top of the first annular inclined surface.

9. The substrate processing apparatus as described in claim 8, characterized in that, The top of the first venting groove does not extend above the first uniform venting groove that is closest to the inner wall of the upper bushing.

10. The substrate processing apparatus according to any one of claims 1 to 9, characterized in that, The main body of the chamber is also provided with a second channel for injecting purge gas, which is injected into the gap between the lower bushing and the lower chamber cover through the second channel.

11. The substrate processing apparatus as claimed in claim 10, characterized in that, The bottom surface of the lower bushing is provided with a second air distribution structure, the second air distribution structure including a through annular second air inlet and air distribution groove; the second air inlet and air distribution groove is opened at the outer periphery of the bottom surface of the lower bushing.

12. The substrate processing apparatus as claimed in claim 11, characterized in that, The outer periphery of the bottom surface of the lower bushing is a horizontal surface; the second air inlet groove is flush with the outlet of the second channel.

13. The substrate processing apparatus as claimed in claim 11, characterized in that, The second air distribution structure further includes a plurality of second air vents distributed along the circumferential direction of the lower bushing, and the second air vents are connected to the second air inlet air distribution vent.

14. The substrate processing apparatus as claimed in claim 13, characterized in that, The projection of the second vent groove onto the horizontal plane extends along the radial direction of the lower bushing.

15. The substrate processing apparatus as claimed in claim 14, characterized in that, The bottom surface of the lower bushing also has a second annular slope; from top to bottom, the second annular slope gradually tapers inward; the outer periphery of the bottom surface of the lower bushing surrounds the outer periphery of the top of the second annular slope; at least a portion of the second vent groove is distributed on the second annular slope.

16. The substrate processing apparatus as claimed in claim 15, characterized in that, The second gas equalization structure also includes at least one through annular second gas equalization groove distributed on the second annular inclined surface, and the second air inlet gas equalization groove and the second gas equalization groove are connected through the second air passage groove.

17. The substrate processing apparatus as claimed in claim 16, characterized in that, The second air-regulating groove, which is closest to the inner wall of the lower bushing, is spaced apart from the bottom end of the second annular inclined surface.

18. The substrate processing apparatus as claimed in claim 17, characterized in that, The bottom end of the second venting groove does not extend from below the second air equalization groove that is closest to the inner wall of the lower bushing.

19. The substrate processing apparatus as claimed in claim 13, characterized in that, The number of at least one of the first and second ventilation slots shall not be less than 30.

20. The substrate processing apparatus as claimed in claim 16, characterized in that, The width of the first air intake equalization groove, the first air equalization groove, the first ventilation groove, the second air intake equalization groove, the second air equalization groove, and the second ventilation groove is 1mm to 5mm, and the groove depth is 1mm to 3mm.

21. The substrate processing apparatus as claimed in claim 1, characterized in that, The purging gas includes one or more of nitrogen, hydrogen, and inert gases.

22. A substrate processing method, used in the substrate processing apparatus as described in any one of claims 1 to 21, characterized in that, The method includes: During the substrate processing process in the reaction chamber of the substrate processing equipment, process gas is injected into the reaction chamber through the process gas inlet; at the same time, purge gas is injected into the reaction chamber through the first channel, or through the first channel and the second channel.

23. The substrate processing method as described in claim 22, characterized in that, The method further includes: During periods when no substrate processing is being performed in the reaction chamber of the substrate processing apparatus, purge gas is injected into the reaction chamber through at least one of the first and second channels.

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