Light emitting chip and method of manufacturing the same

Abstract

The application relates to a light-emitting chip and a manufacturing method thereof. The light-emitting chip comprises an epitaxial layer, a first electrode arranged on the first semiconductor layer, a current spreading layer arranged on the second semiconductor layer, and a second electrode arranged on the current spreading layer. One side of the second electrode close to the second semiconductor layer is in contact with the current spreading layer. A conductive current spreading body is arranged between the second electrode and the second semiconductor layer. One end of the current spreading body is connected with the second electrode, and the other end of the current spreading body passes through the current spreading layer and is connected with the second semiconductor layer. The adhesion between the current spreading body and the second electrode is greater than the adhesion between the current spreading layer and the second electrode. The application can solve the current accumulation problem caused by the direct contact between the second electrode and the second semiconductor layer, the current spreading is better, and the light emission of the light-emitting chip is optimized.

Description

Technical Field

[0001] This application relates to the field of LED displays, and more particularly to a light-emitting chip and a method for manufacturing the same. Background Technology

[0002] LED (Light Emitting Diode) chips are electronic components that directly convert electrical energy into light energy, and are now widely used in displays and lighting.

[0003] Currently, wire bonding is used in the backplane fabrication process to achieve electrical conduction of the LEDs. However, due to poor adhesion between the LED electrodes and the current spreading layer, electrode displacement or even detachment easily occurs during wire bonding, leading to poor electrical connection or even disconnection of the LEDs, preventing them from functioning properly and reducing the yield of the finished product. To address the electrode displacement and detachment issues during wire bonding, the electrodes are designed to pass through the current spreading layer and directly contact the semiconductor layer. However, direct contact between the electrodes and the semiconductor layer causes current to be directly conducted through the electrodes to the semiconductor layer, resulting in poor current spreading and current accumulation, which affects the LED's light emission.

[0004] Therefore, how to solve the problem of current accumulation within the light-emitting chip is an urgent issue that needs to be addressed. Summary of the Invention

[0005] In view of the shortcomings of the above-mentioned related technologies, the purpose of this application is to provide a light-emitting chip and a method for manufacturing the same, which aims to solve the problem of current accumulation in the light-emitting chip.

[0006] A light-emitting chip, comprising:

[0007] An epitaxial layer, wherein the epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially;

[0008] A first electrode disposed on the first semiconductor layer;

[0009] A current spreading layer disposed on the second semiconductor layer; and

[0010] A second electrode is disposed on the current spreading layer, the side of the second electrode near the second semiconductor layer is in contact with the current spreading layer, a conductive current spreader is disposed between the second electrode and the second semiconductor layer, one end of the current spreader is connected to the second electrode, and the other end passes through the current spreading layer and is connected to the second semiconductor layer, the adhesion force between the current spreader and the second electrode is greater than the adhesion force between the current spreading layer and the second electrode.

[0011] The aforementioned light-emitting chip incorporates a current spreader. This current spreader exhibits good adhesion to the second electrode, and the connection between the current spreader and the second electrode increases the second electrode's stability, preventing displacement or detachment during wire bonding. Simultaneously, the current spreader also serves to amplify current; the current from the second electrode is conducted to the second semiconductor layer after passing through the current spreader, preventing current accumulation caused by direct contact between the second electrode and the second semiconductor layer. This results in better current amplification and optimizes the light-emitting chip's luminescence. Furthermore, the second electrode is in direct contact with the current spreader, allowing the current from the second electrode to also be directly conducted to the second semiconductor layer via the current spreader layer, further optimizing the current amplification effect and improving the chip's performance.

[0012] Optionally, the material of the current spreader includes zinc oxide. Because zinc oxide has a mesh-like surface structure, this structure provides stronger adhesion, which is beneficial for improving the adhesion between the current spreader and the second electrode.

[0013] Optionally, the current spreader includes a protrusion that extends beyond the side of the current spreading layer away from the second semiconductor layer; or, the side of the current spreader away from the second semiconductor layer is flush with the side of the current spreading layer away from the second semiconductor layer. The protrusion is more conducive to increasing the adhesion between the second electrode and the current spreader.

[0014] Based on the same inventive concept, this application also provides a method for manufacturing the light-emitting chip as described above, comprising:

[0015] To fabricate the epitaxial layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed.

[0016] The current spreading layer is disposed on the second semiconductor layer;

[0017] A current extender is formed that passes through the current spreading layer and is connected to the second semiconductor layer;

[0018] The first electrode is disposed on the first semiconductor layer, and the second electrode is disposed on the current spreading layer, which is in contact with the current spreading layer and connected to the current spreader.

[0019] In the above fabrication method, the current spreader formed is connected to the second electrode. The adhesion between the current spreader and the second electrode is better, improving the stability of the second electrode and preventing displacement or detachment during wire bonding. Simultaneously, the current spreading effect of the current spreader prevents current accumulation caused by direct contact between the second electrode and the second semiconductor layer, resulting in better current spreading and optimized light emission from the LED. Furthermore, the direct contact between the second electrode and the current spreader further optimizes the current spreading effect and improves the operating performance of the LED. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the structure of a light-emitting chip provided in an embodiment of this application;

[0021] Figure 2 This is a schematic diagram of another structure of the light-emitting chip provided in an embodiment of this application;

[0022] Figure 3 This is another schematic diagram of the structure of the light-emitting chip provided in the embodiments of this application;

[0023] Figure 4 This is a schematic diagram of another structure of the light-emitting chip provided in the embodiments of this application;

[0024] Figure 5 A schematic diagram of a structure in which a boss is provided on the first surface of a current extender provided in an embodiment of this application;

[0025] Figure 6 This is a schematic diagram of the structure with a passivation layer provided in an embodiment of this application;

[0026] Figure 7 This is a schematic diagram of the structure with a current blocking layer provided in an embodiment of this application;

[0027] Figure 8 A schematic flowchart illustrating a method for fabricating a light-emitting chip according to another embodiment of this application;

[0028] Figure 9 This is a schematic diagram of the structure after the epitaxial layer has been fabricated, provided in another embodiment of this application;

[0029] Figure 10 This is a schematic diagram of the structure after the current spreading layer has been fabricated, provided in another embodiment of this application;

[0030] Figure 11 This is a schematic diagram of the structure after the current spreader has been fabricated, as provided in another embodiment of this application;

[0031] Explanation of reference numerals in the attached figures: 1-substrate; 2-first semiconductor layer; 3-active layer; 4-second semiconductor layer; 5-current spreading layer; 6-current spreader; 601-protrusion; 602-first surface; 603-bore; 7-second electrode; 701-second surface; 8-first electrode; 9-current blocking layer; 10-passivation layer. Detailed Implementation

[0032] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0034] Currently, wire bonding is used in the backplane fabrication process to achieve electrical conduction of the LEDs. However, due to poor adhesion between the LED electrodes and the current spreading layer, electrode displacement or even detachment easily occurs during wire bonding, leading to poor electrical connection or even disconnection of the LED, causing it to malfunction and reducing the yield of the finished product. To solve the problem of electrode displacement and detachment during wire bonding, the electrodes are now designed to pass through the current spreading layer and directly contact the semiconductor layer. The portion of the electrode passing through the current spreading layer enhances the electrode's adhesion. However, direct contact between the electrode and the semiconductor layer causes current to be directly conducted to the semiconductor layer through the electrode, resulting in poor current spreading and current accumulation, which affects the light emission of the LED.

[0035] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0036] Example of this application:

[0037] This embodiment provides a light-emitting chip, which may be, but is not limited to, an LED light-emitting chip. When it is an LED light-emitting chip, it may include, but is not limited to, ordinary-sized LEDs, and may also include micro LEDs, such as, but not limited to, Mini LED (Mini Light Emitting Diode) and Micro LED (Micro Light Emitting Diode).

[0038] like Figures 1-7 The light-emitting chip in this embodiment includes: an epitaxial layer, a first electrode 8, a second electrode 7, a current spreading layer 5, and a current spreading body 6. The epitaxial layer includes a first semiconductor layer 2, an active layer 3, and a second semiconductor layer 4, sequentially disposed. The epitaxial layer is disposed on a substrate 1, which may be made of, but is not limited to, sapphire, silicon carbide, or silicon.

[0039] In this embodiment, the first electrode 8 is disposed on the first semiconductor layer 2, the current spreading layer 5 is disposed on the second semiconductor layer 4, and the second electrode 7 is disposed on the current spreading layer 5.

[0040] It is understood that the first electrode 8 and the second electrode 7 are metal electrodes. For example, the electrode material may include, but is not limited to, at least one of Cr, Ni, Al, Ti, Au, Pt, W, Pb, Rh, Sn, Cu, and Ag. In some embodiments, when the first semiconductor layer 2 is an N-type semiconductor layer, the first electrode 8 is an N-type electrode, the second semiconductor layer 4 is a P-type semiconductor layer, and the second electrode 7 is a P-type electrode. Of course, in some application scenarios, the second semiconductor layer 4 may also be a P-type semiconductor layer, and the first semiconductor layer 2 may also be an N-type semiconductor layer. This embodiment does not impose specific limitations on this.

[0041] In this embodiment, the side of the second electrode 7 closest to the second semiconductor layer 4 is in contact with the current spreading layer 5. Direct contact ensures that the current of the second electrode 7 can be sufficiently spread directly by the current spreading layer 5. In one embodiment, the current spreading layer 5 may be, but is not limited to, an indium tin oxide film layer, and the current spreading layer 5 has a good spreading effect.

[0042] In this embodiment, the current spreader 6 is disposed between the second electrode 7 and the second semiconductor layer 4. One end of the current spreader 6 is connected to the second electrode 7, and the other end passes through the current spreading layer 5 and is connected to the second semiconductor layer 4. Furthermore, the adhesion force between the current spreader 6 and the second electrode 7 is greater than the adhesion force between the current spreading layer 5 and the second electrode 7. In some embodiments, the other end of the current spreader 6 passes through the current spreading layer 5 and is connected to the second semiconductor layer 4; specifically, the other end of the current spreader 6 passes through a window provided on the current spreading layer 5 and is connected to the second semiconductor layer 4.

[0043] In this embodiment, the number of current spreaders 6 is not specifically limited. For example, one current spreader 6 can be provided between the second electrode 7 and the second semiconductor layer 4. In some application scenarios, two or more current spreaders 6 can also be provided. In this embodiment, the shape of the cross-section of the current spreader 6 is also not specifically limited. For example, its cross-section can be circular or elliptical.

[0044] In this embodiment, the material of the current spreader 6 may include, but is not limited to, zinc oxide, such as a material containing zinc oxide, like aluminum-doped zinc oxide. Because the surface of zinc oxide has a mesh structure, the mesh structure has stronger adhesion, which is beneficial for improving the adhesion between the current spreader 6 and the second electrode 7.

[0045] In some embodiments, the resistance of the second electrode 7 is less than the resistance of the current spreading layer 5, and the resistance of the current spreading layer 5 is less than the resistance of the current spreader 6. The current spreading effect of the current spreading layer 5 is better than that of the current spreader 6, which is more conducive to the current in the second electrode 7 flowing to the current spreading layer 5 through the part of the second electrode 7 that is in direct contact with the current spreading layer 5, thus further optimizing the current diffusion effect. In addition, some current in the current spreader 6 will still flow to the current spreading layer 5, realizing the expansion of the current in the current spreader 6 to both sides, avoiding the current agglomeration phenomenon at the current spreader 6, and achieving uniform current diffusion. When the current spreading layer 5 is indium tin oxide and the current spreader 6 is zinc oxide, because the spreading effect of indium tin oxide is better than that of zinc oxide, after the current in the second electrode 7 passes through the current spreader 6, a part of the current will still be conducted to the current spreading layer 5, and then conducted from the current spreading layer 5 to the second semiconductor layer 4.

[0046] The current spreader 6 in the aforementioned light-emitting chip exhibits good adhesion to the second electrode 7. The connection between the current spreader 6 and the second electrode 7 increases the firmness of the second electrode 7, preventing displacement or detachment during wire bonding. Simultaneously, the current spreader 6 also serves to spread the current. The current from the second electrode 7 is conducted to the second semiconductor layer 4 after passing through the current spreader 6, preventing current accumulation caused by direct contact between the second electrode 7 and the second semiconductor layer 4. This results in better current spreading and optimizes the light emission of the chip. Furthermore, the direct contact between the second electrode 7 and the current spreader 6 allows the current from the second electrode 7 to be directly conducted to the second semiconductor layer 4 via the current spreading layer 5, further optimizing the current spreading effect and improving the working performance of the light-emitting chip.

[0047] In some implementations, such as Figure 6The current extender 6 includes a protrusion 601 extending beyond the side of the current extending layer 5 away from the second semiconductor layer 4. The protrusion 601 has a side surface, which, when the second electrode 7 is disposed, covers at least a portion of the side surface of the protrusion 601. This means the second electrode 7 has a portion that contacts the side surface of the protrusion 601, creating a lateral limit on the second electrode 7 and further enhancing the connection between the second electrode 7 and the current extender 6. The side surface of the protrusion 601 also increases the contact area between the second electrode 7 and the current extender 6, resulting in a stronger adhesion between them. In this embodiment, the height h of the protrusion 601 can be, but is not limited to, 100 angstroms to 300 angstroms.

[0048] In one embodiment, the second electrode 7 can cover the surface of the protrusion 601 completely. This complete coverage of the protrusion 601 strengthens the adhesive bond between the current spreader 6 and the second electrode 7. When the second electrode 7 covers the protrusion 601, the portion of the second electrode 7 in contact with the current spreading layer 5 is the surface of the second electrode 7 near the current spreading layer 5, excluding the portion corresponding to the protrusion 601.

[0049] In this embodiment, the area of ​​the side of the protrusion 601 away from the second semiconductor layer 4 is the first area, and the area of ​​the side of the current extender 6 close to the second semiconductor layer 4 is the second area. In one implementation, the first area is greater than or equal to the second area, such as... Figure 1 This is a diagram illustrating when the first area is larger than the second area, such as... Figure 2 This diagram illustrates the case where the first area equals the second area. When the first area is greater than or equal to the second area, the protrusion 601 increases the contact area between the second electrode 7 and the current extender 6, which helps to enhance the stability of the adhesive connection between the second electrode 7 and the current extender 6. In another embodiment, the first area may also be smaller than the second area. Even if the first area is smaller than the second area, the second electrode 7 and the current extender 6 can be laterally limited by the side of the current extender 6 to prevent displacement of the second electrode 7.

[0050] In some implementations, such as Figure 3 The side of the current spreader 6 away from the second semiconductor layer 4 can also be flush with the side of the current spreader 5 away from the second semiconductor layer 4. This flush alignment ensures the connection between the current spreader 6 and the second electrode 7, and also ensures sufficient contact between the second electrode 7 and the current spreader 5.

[0051] In some implementations, such as Figure 4The side of the current spreader 6 away from the second semiconductor layer 4 is the first surface 602, which is lower than the side of the current spreading layer 5 away from the second semiconductor layer 4. This lower surface ensures the connection between the current spreader 6 and the second electrode 7. Furthermore, the current spreader 6 is completely located within the window provided by the current spreading layer 5. The end of the second electrode 7 near the second semiconductor layer 4 has an extension extending into this window. The side of this extension near the second semiconductor layer 4 is connected to the current spreader 6, and the side of this extension is in contact with the current spreading layer 5, increasing the contact area between the second electrode 7 and the current spreading layer 5, thus improving current spreading.

[0052] In one implementation, such as Figure 5 When the first surface 602 is lower than the side of the current spreading layer 5 away from the second semiconductor layer 4, a protrusion 603 can be provided on the first surface 602 to make the connection between the second electrode 7 and the current spreader 6 more secure. The area of ​​the side of the protrusion 603 away from the second semiconductor layer 4 is the third area, and the area of ​​the side of the current spreader 6 close to the second semiconductor layer 4 is the second area. The third area is smaller than the second area, and the second electrode 7 covers the protrusion 603 and the first surface 602. It can be understood that the second electrode 7 covers the protrusion 603 and the first surface 602, meaning that the extension of the second electrode 7 completely covers the side of the protrusion 603 and the side of the protrusion 603 away from the second semiconductor layer, while the side of the extension of the second electrode 7 close to the second semiconductor layer adheres to and covers the first surface 602 of the current spreader 6. This increases the contact area between the second electrode 7 and the current spreader 6, and increases the strength of the adhesive connection between the second electrode 7 and the current spreader 6. Furthermore, a stepped structure is formed between the side of the protrusion 603 away from the second semiconductor layer 4 and the first surface 602, and this stepped structure can also limit the second electrode 7.

[0053] The boss 603 provided in this embodiment can also improve the flatness of the second surface 701 of the second electrode 7 formed by vapor deposition. The second surface 701 of the second electrode 7 is the side of the second electrode 7 away from the current spreading layer 5. Because the thickness of the second electrode 7 is uniform during vapor deposition, but the second electrode 7 has an extension extending into the window of the current spreading layer 5, pits will appear on the second surface 701 at the position corresponding to the extension during vapor deposition, which is not conducive to the subsequent wire bonding of the second electrode 7. Therefore, the boss 603 on the first surface 602 can form a height filling, such as Figure 5This reduces the vapor deposition thickness at the corresponding locations of the second electrode 7 and the boss 603, resulting in a smoother second surface 701 of the vapor-deposited second electrode 7. In some applications, the side of the boss 603 away from the second semiconductor layer 4 can be lower than the side of the current spreading layer 5 away from the second semiconductor layer 4; or the side of the boss 603 away from the second semiconductor layer 4 can be flush with the side of the current spreading layer 5 away from the second semiconductor layer 4.

[0054] In this embodiment, as Figure 7 The second semiconductor layer 4 is further provided with a current blocking layer 9, and a current spreading layer 5 covers the current blocking layer 9. The current spreader 6 needs to pass through the current spreading layer 5 and the current blocking layer 9 to connect with the second semiconductor layer 4. The current blocking layer 9 can reduce the current density in the active region below and near the second electrode 7, alleviate the current congestion effect near the second electrode 7, and diffuse more current.

[0055] like Figure 6 , Figure 7 In this embodiment, a passivation layer 10 is also provided, which serves to isolate, protect and insulate. The passivation layer 10 has windows on the part corresponding to the first electrode 8 and the second electrode 7 for exposing the first electrode 8 and the second electrode 7.

[0056] The good adhesion between the current spreader 6 and the second electrode 7 in the aforementioned light-emitting chip increases the firmness of the second electrode 7, preventing displacement or detachment during wire bonding. Simultaneously, the current from the second electrode 7 is conducted to the second semiconductor layer 4 after passing through the current spreader 6, preventing current accumulation and improving current spread, thus optimizing the light emission of the chip. Furthermore, the second electrode 7 is in direct contact with the current spreader 6, allowing the current from the second electrode 7 to be directly conducted to the second semiconductor layer 4 after passing through the current spreading layer 5, further optimizing the current spreading effect and improving the working performance of the light-emitting chip.

[0057] Another optional embodiment of this application:

[0058] This embodiment provides a method for fabricating a light-emitting chip as described above, such as... Figure 8 ,include:

[0059] S1: Create the epitaxial layer.

[0060] The structure after the epitaxial layer is fabricated is as follows Figure 9 As shown, the fabrication of the epitaxial layer includes sequentially setting a first semiconductor layer 2, an active layer 3, and a second semiconductor layer 4.

[0061] S2: A current spreading layer is disposed on the second semiconductor layer.

[0062] The structure after fabricating current spread layer 5 is as follows Figure 10As shown, in this embodiment, the current spreading layer 5 can be formed on the second semiconductor layer 4 by a deposition process. The thickness of the current spreading layer 5 can be 800 angstroms to 2000 angstroms. In some application scenarios, the thickness of the current spreading layer 5 can be less than 800 angstroms or greater than 2000 angstroms. This embodiment does not impose a specific limitation on the thickness of the current spreading layer 5.

[0063] S3: Form a current spreader that passes through the current spread layer and is connected to the second semiconductor layer.

[0064] One structure after the current spreader is fabricated is as follows: Figure 11 As shown, the material of the current spreader 6 in this embodiment can be, but is not limited to, zinc oxide. For example, it can also be a material containing zinc oxide, such as aluminum-doped zinc oxide. Because the surface of zinc oxide has a mesh structure, the mesh structure has stronger adhesion, which is beneficial to improving the adhesion between the current spreader 6 and the second electrode. The current spreader 6 can be formed by a deposition process. The thickness of the current spreader 6 deposition is the same as in the previous embodiment, and the specific arrangement of the current spreader 6 is also the same as in the previous embodiment, and will not be repeated here.

[0065] In this embodiment, forming a current spreader 6 that passes through the current spread layer 5 and is connected to the second semiconductor layer 4 includes: etching a window on the current spread layer 5 to expose the second semiconductor layer 4; and then depositing the current spreader 6 in the window. The fabrication of the current spreader 6 is simple.

[0066] S4: A first electrode is disposed on the first semiconductor layer, and a second electrode is disposed on the current spreading layer that is in contact with the current spreading layer and connected to the current spreading body.

[0067] A structure after the first and second electrodes are fabricated, such as Figure 1 As shown, the first electrode 8 and the second electrode 7 in this embodiment can be fabricated by vapor deposition.

[0068] In some embodiments, before the current spreading layer 5 is formed on the second semiconductor layer 4, the method further includes: Figure 7 A current blocking layer 9 is disposed on the second semiconductor layer 4. The current blocking layer 9 can also be fabricated by deposition, and the thickness of the deposited current blocking layer 9 can be, but is not limited to, 800 angstroms-1200 angstroms. In order to ensure the connection between the current extender 6 and the second semiconductor layer 4, a window needs to be processed on the current blocking layer 9. This window can be formed by, but is not limited to, photolithography.

[0069] In this embodiment, after the first electrode 8 and the second electrode 7 are fabricated, as follows: Figure 6Furthermore, a passivation layer 10 needs to be provided, which serves to isolate, protect, and insulate. The passivation layer 10 can also be fabricated by deposition. Finally, windows need to be provided on the passivation layer 10 at the locations corresponding to the first electrode 8 and the second electrode 7 to expose the first electrode 8 and the second electrode 7.

[0070] In the above-described fabrication method, the current spreader 6 is connected to the second electrode 7. The adhesion between the current spreader 6 and the second electrode 7 is improved, enhancing the stability of the second electrode 7 and preventing displacement or detachment during wire bonding. Simultaneously, the current spreading effect of the current spreader 6 prevents current accumulation caused by direct contact between the second electrode 7 and the second semiconductor layer 4, resulting in better current spreading and optimized light emission from the LED. Furthermore, the direct contact between the second electrode 7 and the current spreader 6 further optimizes the current spreading effect and improves the operating performance of the LED.

[0071] It should be understood that the application of this application is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A light-emitting chip, characterized in that, include: An epitaxial layer, wherein the epitaxial layer comprises a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially; A first electrode disposed on the first semiconductor layer; A current spreading layer is disposed on the second semiconductor layer; as well as A second electrode is disposed on the current spreading layer. The side of the second electrode close to the second semiconductor layer is in contact with the current spreading layer. A current spreader is disposed between the second electrode and the second semiconductor layer. One end of the current spreader is connected to the second electrode, and the other end passes through the current spreading layer and is connected to the second semiconductor layer. The adhesion force between the current spreader and the second electrode is greater than the adhesion force between the current spreading layer and the second electrode.

2. The light-emitting chip as described in claim 1, characterized in that, The material of the current spreader includes zinc oxide.

3. The light-emitting chip as described in claim 1, characterized in that, The current spreader includes a protrusion that extends outward from the side of the current spreader away from the second semiconductor layer; or, the side of the current spreader away from the second semiconductor layer is flush with the side of the current spreader away from the second semiconductor layer.

4. The light-emitting chip as described in claim 3, characterized in that, The height of the protrusion is 100 angstroms to 300 angstroms.

5. The light-emitting chip as described in claim 3, characterized in that, The second electrode covers the surface of the protrusion.

6. The light-emitting chip according to any one of claims 3-5, characterized in that, The area of ​​the side of the protrusion away from the second semiconductor layer is the first area, and the area of ​​the side of the current spreader close to the second semiconductor layer is the second area. The first area is greater than or equal to the second area.

7. The light-emitting chip as described in any one of claims 1 or 2, characterized in that, The side of the current spreader away from the second semiconductor layer is a first surface, and the first surface is lower than the side of the current spreader away from the second semiconductor layer.

8. The light-emitting chip as described in claim 7, characterized in that, A protrusion is provided on the first surface. The area of ​​the side of the protrusion away from the second semiconductor layer is a third area. The area of ​​the side of the current spreader close to the second semiconductor layer is a second area. The third area is smaller than the second area. The second electrode covers the protrusion and the first surface.

9. The light-emitting chip according to any one of claims 1-5, characterized in that, The resistance of the second electrode is less than the resistance of the current spreading layer, and the resistance of the current spreading layer is less than the resistance of the current spreader.

10. A method for manufacturing a light-emitting chip as described in any one of claims 1-9, characterized in that, include: To fabricate the epitaxial layer, the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially disposed. The current spreading layer is disposed on the second semiconductor layer; A current extender is formed that passes through the current spreading layer and is connected to the second semiconductor layer; The first electrode is disposed on the first semiconductor layer, and the second electrode is disposed on the current spreading layer, which is in contact with the current spreading layer and connected to the current spreader.

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