A device and method for generating stable nanocluster beams

Abstract

This invention discloses a device and method for generating a stable nanocluster beam, relating to the field of magnetron sputtering technology. It is used to overcome differences in target materials and provide a stable nanocluster beam for high-voltage magnetron sputtering systems. The device includes a magnetron sputtering cathode magnetic field array, an argon ring, a cluster chamber, and a pressure differential chamber. The magnetron sputtering cathode magnetic field array includes a central magnet located at the center of the cathode copper pillar and peripheral magnets arranged in a ring around the edge of the cathode cylinder. This solution adapts to the generation of nanoclusters from different materials by replacing the peripheral magnetic field. The size of the nanoclusters can be changed by manually or by motor-driven adjustment of the lateral distance between the argon ring and the magnetron sputtering cathode target. The size of the clusters can be adjusted by replacing the blind plate with different sized circular holes at the front end of the cluster chamber, thereby changing the nanocluster formation rate.

Description

Technical Field

[0001] This invention relates to the field of magnetron sputtering technology, and more specifically, to an apparatus and method for generating a stable nanocluster beam. Background Technology

[0002] Nanocluster synthesis methods typically include physical and chemical methods. Chemical methods offer certain advantages in synthesizing various types of nanoclusters, but the time required to achieve the desired nanocluster size and shape during the chemical reaction process affects the synthesis efficiency. Furthermore, chemical reactions generate waste products such as exhaust gases and wastewater, which, besides being difficult to separate and affecting nanocluster performance, also pollute the environment. Therefore, physical methods for synthesizing nanoclusters exhibit unique advantages due to their high synthesis efficiency, lack of pollution, and controllable cluster size.

[0003] High-pressure magnetron sputtering (HPS) for preparing nanoclusters is a type of magnetron sputtering coating, representing a novel or improved magnetron sputtering technology. Unlike traditional magnetron sputtering methods, HPS systems place the cathode and the substrate in two separate cavities. One cavity generates a stable cluster beam, while the other deposits the nanocluster material. This method offers the advantage of separating the sputtering and deposition processes, preventing contamination of the nanocluster material and maintaining a clean deposition cavity.

[0004] Traditional magnetron sputtering technology often employs balanced magnetron sputtering, which involves placing a permanent magnet or electromagnetic coil with a core magnetic field strength equal to or similar to that of the outer ring behind the cathode target. This magnetic field arrangement increases gas molecule collisions and ionization, maintaining discharge even at relatively low gas pressures. However, because the magnetic field confines secondary electrons near the target and strongly restricts the plasma region to the target surface, the effective coating area is shortened. This conventional magnetic field arrangement is detrimental to the formation of stable nanocluster beams. Therefore, the arrangement of the cathode magnetic field is a crucial consideration for generating stable nanocluster beams. Summary of the Invention

[0005] The purpose of this invention is to provide an apparatus and method for generating stable nanocluster beams, which can effectively extend the distance of the nanocluster beams and generate stable nanocluster beams at high pressure. At the same time, it can overcome the differences in target materials and generate different types of nanocluster beams, thereby solving the technical problems existing in the background art.

[0006] The present invention provides a device capable of generating a stable nanocluster beam, characterized in that it includes a cathode magnetic field array, a cluster chamber, and a pressure difference chamber; the cathode magnetic field array is placed inside a cathode copper pillar, the cathode magnetic field array includes a central magnet fixed at the center and edge magnets fixed at the edges, the cathode magnetic field array passes through a magnetic yoke base at the bottom of a circular hole, the cathode magnetic field array is located at the head of a magnetron sputtering cathode target, and an argon gas ring surrounds the periphery of the magnetron sputtering cathode target;

[0007] The cluster chamber is located in the differential pressure chamber and shares a molecular pump and a mechanical pump. The magnetron sputtering cathode target and the argon ring are located inside the cluster chamber. The front end of the cluster chamber has a replaceable circular blind plate with a through hole in the center of the circular blind plate.

[0008] In a preferred embodiment, the cathode copper pillar has cylindrical grooves at its center and edge, the cylindrical grooves at its center and edge have the same depth, and the diameter of the cylindrical groove at the center of the cathode copper pillar is larger than that of the cylindrical groove at the edge; a magnetic yoke base is fixed to the bottom of the cylindrical grooves at the center and edge of the cathode copper pillar.

[0009] In a preferred embodiment, the lower ends of the central magnet and the edge magnet are flush and fixed on the yoke base; the magnetization direction of the central magnet is opposite to and parallel to the magnetization direction of the edge magnet; the central magnet and the edge magnet are cylinders with a diameter smaller than the diameter of the cylindrical groove on the cathode copper pillar; the height of the edge central magnet is consistent with the depth of the cylindrical groove in the center of the cathode copper pillar.

[0010] In a preferred embodiment, the height of the edge magnet cylinder is 1mm-5mm.

[0011] In a preferred embodiment, the argon ring is a hollow stainless steel tube with small holes evenly distributed on one side of the target material surface.

[0012] In a preferred embodiment, the size of the through hole in the center of the circular blind plate is 1mm-6mm.

[0013] A method for generating stable nanocluster beams includes the following steps:

[0014] S1: The central magnet and the edge hematite are placed in the cylindrical grooves at the center and edge of the copper pillar to form a cathode magnetic field array;

[0015] S2: Adjust the lateral position of the magnetron sputtering cathode target so that the distance between the cathode target and the argon ring is appropriate;

[0016] S3: Replace the cluster chamber blind flange, selecting the appropriate aperture blind flange as needed;

[0017] S4: Place the required metal target on the magnetron sputtering cathode head;

[0018] S5: Use mechanical pumps and molecular pumps to evacuate the cluster chamber and differential pressure chamber;

[0019] S6: Set the argon gas pressure between 10 Pa and 120 Pa;

[0020] S7: Set the DC power supply power, ranging from 100W to 300W. Once the target material ignites, a stable nanocluster beam can be obtained.

[0021] The beneficial effects of the technical solution of this invention are:

[0022] This invention provides a method for generating stable nanocluster beams. By replacing the edge magnetic field, it adapts to the generation of nanoclusters from different materials. The size of the nanoclusters can be changed by manually or by motor-driven adjustment of the lateral distance between the argon ring and the magnetron sputtering cathode target. The size of the clusters can be adjusted by replacing the blind plate with different sized circular holes at the front end of the cluster chamber, thereby changing the formation rate of the nanoclusters. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall structure of the present invention.

[0024] Figure 2 This is a schematic diagram of the cathode magnetic field array of the present invention.

[0025] Figure 3 This is a schematic diagram of the cross-section of the cathode magnetic field array of the present invention.

[0026] Figure 4 This is a schematic diagram of the circular blind plate of the present invention.

[0027] Explanation of reference numerals in the attached diagram: 1. Magnetic field array, 2. Copper pillar, 3. Central magnet, 4. Edge magnet, 5. Magnetic yoke base, 6. Magnetron sputtering cathode target, 7. Argon ring, 8. Cluster chamber, 9. Differential pressure chamber, 10. Molecular pump, 11. Mechanical pump, 12. Circular blind plate, 13. Expansion port. Detailed Implementation

[0028] The present invention will now be described in further detail. The embodiments of the invention are given for the purpose of illustration and description, and are not intended to be exhaustive or to limit the invention to the forms disclosed. Many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described to better illustrate the principles and practical application of the invention, and to enable those skilled in the art to understand the invention and design various embodiments with various modifications suitable for a particular purpose.

[0029] like Figure 1-4As shown, the present invention provides a device capable of generating a stable nanocluster beam, comprising a cathode magnetic field array 1, a cluster chamber 8, and a pressure difference chamber 9. The cathode magnetic field array 1 is placed inside a cathode copper pillar 2. The cathode magnetic field array 1 includes a centrally fixed magnet 3 and edge magnets 4 fixed at their edges. The cathode magnetic field array 1 passes through a magnetic yoke base 5 at the bottom of a circular hole. The cathode magnetic field array 1 is located at the head of a magnetron sputtering cathode target 6, and an argon ring 7 surrounds the periphery of the magnetron sputtering cathode target 6. The argon ring 7 adopts a fixed structure, fixed to the outside of the magnetron sputtering cathode target 6. The magnetron sputtering cathode target 6 adopts a telescopic structure, and the lateral distance between the argon ring 7 and the magnetron sputtering cathode target 6 can be adjusted manually or by a motor drive.

[0030] The cluster chamber 8 is located within the differential pressure chamber 9 and shares a molecular pump 10 and a mechanical pump 11. The working pressure of the differential pressure chamber 9 is adjusted by the argon flow rate, the opening degree of the molecular pump, and the size of the circular orifice in the cluster chamber. The differential pressure chamber is also equipped with an expansion port 13 for connecting to other chambers for collecting or preparing nano-cluster materials. The magnetron sputtering cathode target 6 and the argon ring 7 are located inside the cluster chamber 8. The front end of the cluster chamber 8 has a replaceable circular blind plate 12, and the central circle of the circular blind plate 12 has a through hole.

[0031] This scheme can adapt to the generation of nanoclusters of different materials by replacing the edge magnetic field 4. The number of edge magnets 4 is determined by the size of the ring and the distance between adjacent edge magnets. The size of the nanoclusters can be changed by manually or by motor-driven adjustment of the lateral distance between the argon ring and the magnetron sputtering cathode target 6. The size of the clusters can be adjusted by replacing the circular blind plates 12 of different sizes at the front end of the cluster chamber 8, thereby changing the formation rate of the nanoclusters. The circular blind plates 12 are available in various sizes, such as... Figure 4 As shown, several circular blind plates with different diameters of central holes are listed.

[0032] The cathode copper pillar 2 has cylindrical grooves at its center and edge. The cylindrical grooves at the center and edge of the cathode copper pillar 2 have the same depth. The diameter of the cylindrical groove at the center of the cathode copper pillar 2 is larger than that of the cylindrical groove at the edge. A magnetic yoke base 5 is fixed at the bottom of the cylindrical grooves at the center and edge of the cathode copper pillar 2.

[0033] The lower ends of the central magnet 3 and the edge magnet 4 are flush and fixed to the magnetic yoke base 5. Both the central magnet 3 and the edge magnet 4 are made of aluminum-iron-boron strong magnets. The magnetization direction of the central magnet 3 is opposite to and parallel to the magnetization direction of the edge magnet 4. Both the central magnet 3 and the edge magnet 4 are cylinders, with a diameter smaller than the diameter of the cylindrical groove on the cathode copper pillar 2. The height of the central magnet 3 is the same as the depth of the cylindrical groove in the center of the cathode copper pillar 2. The height of the cylindrical edge magnet 4 is 1mm-5mm.

[0034] The argon ring 7 is a hollow stainless steel tube with small holes evenly distributed on one side of the target material surface. The stainless steel tube is connected to an external inlet valve and a flow meter.

[0035] The size of the through hole in the center of the circular blind plate 12 is 1mm-6mm, and blind plates with holes of different diameters can be replaced.

[0036] Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art and related fields based on the embodiments of the present invention without inventive effort should fall within the scope of protection of the present invention. Structures, devices, and operating methods not specifically described and explained in the present invention, unless otherwise specified or limited, shall be implemented according to conventional means in the art.

Claims

1. A device capable of generating a stable nanocluster beam, characterized in that, It includes a cathode magnetic field array (1), a cluster chamber (8), and a differential pressure chamber (9); the cathode magnetic field array (1) is placed inside the cathode copper pillar (2), the cathode magnetic field array (1) includes a central magnet (3) fixed at the center and an edge magnet (4) fixed at the edge position, the cathode magnetic field array (1) passes through the magnetic yoke base (5) at the bottom of the circular hole, the cathode magnetic field array (1) is located at the head of the magnetron sputtering cathode target (6), and an argon ring (7) surrounds the periphery of the magnetron sputtering cathode target (6); The cluster chamber (8) is located inside the differential pressure chamber (9) and shares a molecular pump (10) and a mechanical pump (11). The magnetron sputtering cathode target (6) and the argon ring (7) are located inside the cluster chamber (8). The front end of the cluster chamber (8) has a replaceable circular blind plate (12), and the circular blind plate (12) has a through hole in its center circle. The lower ends of the central magnet (3) and the edge magnet (4) are flush and fixed on the magnetic yoke base (5); the magnetization direction of the central magnet (3) is opposite to and parallel to the magnetization direction of the edge magnet (4); the central magnet (3) and the edge magnet (4) are cylinders, and their diameters are smaller than the diameter of the cylindrical groove on the cathode copper column (2); the height of the central magnet (3) is the same as the depth of the central cylindrical groove on the cathode copper column (2); The argon ring (7) is a hollow stainless steel tube with small holes evenly distributed on one side of the target material surface; By replacing the edge magnetic field to adapt to the generation of nanoclusters of different materials, the size of nanoclusters can be changed by manually or by motor-driven adjustment of the lateral distance between the argon ring and the magnetron sputtering cathode target. The size of the clusters can be adjusted by replacing the blind plate with different sized holes at the front end of the cluster chamber, thereby changing the formation rate of nanoclusters. The argon ring (7) adopts a fixed structure and is fixed to the outside of the magnetron sputtering cathode target (6). The magnetron sputtering cathode target (6) adopts a telescopic structure, and the lateral distance between the argon ring (7) and the magnetron sputtering cathode target (6) can be adjusted manually or by motor drive.

2. The device for generating a stable nanocluster beam according to claim 1, characterized in that, The cathode copper column (2) has cylindrical grooves at its center and edge. The cylindrical grooves at the center and edge of the cathode copper column (2) have the same depth. The diameter of the cylindrical groove at the center of the cathode copper column (2) is larger than that at the edge. A magnetic yoke base (5) is fixed at the bottom of the cylindrical grooves at the center and edge of the cathode copper column (2).

3. The device for generating a stable nanocluster beam according to claim 1, characterized in that, The height of the cylindrical edge magnet (4) is 1mm-5mm.

4. The device for generating a stable nanocluster beam according to claim 1, characterized in that, The size of the through hole in the center of the circular blind plate (12) is 1mm-6mm.

5. A method for generating a stable nanocluster beam according to any one of claims 1-4, characterized in that, Includes the following steps: S1: The central magnet and the edge hematite are placed in the cylindrical grooves at the center and edge of the copper pillar to form a cathode magnetic field array; S2: Adjust the lateral position of the magnetron sputtering cathode target so that the distance between the cathode target and the argon ring is appropriate; S3: Replace the cluster chamber blind flange, selecting the appropriate aperture blind flange as needed; S4: Place the required metal target on the magnetron sputtering cathode head; S5: Use mechanical pumps and molecular pumps to evacuate the cluster chamber and differential pressure chamber; S6: Set the argon gas pressure between 10 Pa and 120 Pa; S7: Set the DC power supply power, ranging from 100 W to 300 W. Once the target material ignites, a stable nanocluster beam can be obtained.

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