A PECVT plasma assisted enhanced vapor transport growth preparation device

Abstract

The application discloses a PECVT plasma-assisted enhanced gas phase transport synthesis growth preparation device, which comprises a high-temperature growth furnace, an RF radio frequency induction device and a vacuum box. The high-temperature growth furnace is internally provided with a quartz crucible for preparing materials by gas phase transport synthesis growth; the RF radio frequency induction device irradiates the inside of the high-temperature growth furnace and is used for preparing materials by plasma-assisted enhanced gas phase transport synthesis growth; the vacuum box is provided with openings on two sides, and the opening on one side is communicated with the inside of the high-temperature growth furnace and is used for controlling the synchronous vacuumization treatment or the filling of a protective atmosphere in the inside of the high-temperature growth furnace; and the mounting table is connected with a sliding mounting block at the top end through a guide rail, and a raw material mounting mechanism is arranged on the sliding mounting block and used for mounting the quartz crucible; and the sliding mounting block is slid on the guide rail and is used for driving the quartz crucible to pass through the vacuum box and enter the high-temperature growth furnace.

Description

Technical Field

[0001] This invention relates to the field of materials growth technology, specifically to a PECVT plasma-assisted enhanced gas-phase transport synthesis and growth preparation apparatus. Background Technology

[0002] Chemical vapor transport (CVT) is an important method for the synthesis, growth, preparation, and purification of single-crystal materials. It has the advantages of being direct, simple, effective, low-cost, and easy to operate and control. It involves using a compound material containing the crystal material and a transport agent in a sealed crucible tube container to produce volatile products in a reaction chamber containing a substrate. The products are transported from one end of the container to the other under a certain temperature gradient, enabling the synthesis and growth of crystal materials through reversible chemical reactions in the gas phase.

[0003] However, traditional chemical vapor transport (CVT) has problems such as high reaction temperature, long reaction time, low product quality, small size, and narrow applicability.

[0004] Therefore, this application proposes a method and apparatus for plasma-assisted enhanced gas-phase transport synthesis and growth preparation using PECVT to solve this problem. PECVT adds an RF radio frequency induction device to the front end of a conventional CVT to ionize the reaction gas or precursor to form an active plasma. The activity of the plasma is used to promote and enhance the reaction, accelerate the synthesis and growth of materials, and improve the size and quality of the materials.

[0005] Furthermore, the above content is only used to assist in understanding the technical solution of this application and does not represent an admission that the above content is the closest prior art. Summary of the Invention

[0006] The main objective of this invention is to provide a PECVT plasma-assisted enhanced gas phase transport synthesis and growth preparation device that can reduce the chemical vapor phase transport reaction temperature, accelerate the CVT synthesis reaction, improve synthesis efficiency, lower the reaction temperature, and meet the requirements of material growth and device fabrication.

[0007] The present invention solves the above-mentioned technical problems by adopting the following technical solutions:

[0008] A PECVT (Plasma-Assisted Cryo-Transfer) plasma-enhanced gas-phase transport synthesis and growth apparatus includes a mounting stage, a vacuum chamber, a high-temperature growth furnace, and an RF (Radio Frequency Induction) device connected in sequence, wherein:

[0009] A high-temperature growth furnace, with a quartz crucible placed inside for gas-phase transport and synthesis growth of materials;

[0010] RF radio frequency induction device, used to irradiate the inside of high temperature growth furnace, for plasma-assisted enhanced gas phase transport synthesis and growth of materials;

[0011] The vacuum chamber has openings on both sides, with one opening communicating with the interior of the high-temperature growth furnace, for controlling the synchronous vacuuming or filling of the high-temperature growth furnace with a protective atmosphere.

[0012] The mounting platform has a sliding mounting block connected to its top via a guide rail. The sliding mounting block is equipped with a raw material mounting mechanism for mounting a quartz crucible. The sliding mounting block slides on the guide rail to drive the quartz crucible through the vacuum chamber into the high-temperature growth furnace.

[0013] Preferably, the raw material mounting mechanism includes a crucible loading assembly located on the sliding mounting block, a connecting block connected to the crucible loading assembly, and a connecting handle disposed on the connecting block and the sliding mounting block for manually driving the sliding mounting block to slide on the guide rail.

[0014] Preferably, the connecting block is provided with a limiting arc plate for positioning one end of the quartz crucible in conjunction with the crucible loading assembly.

[0015] Preferably, the connecting block is equipped with a high-temperature plasma sintering device for heat-sealing the open end of the quartz crucible by high-temperature plasma sintering.

[0016] Preferably, the connecting block is equipped with another set of RF radio frequency sensing devices for irradiating the interior of the high-temperature growth furnace after the quartz crucible enters the furnace.

[0017] Preferably, the crucible loading assembly includes a connecting plate on which connecting blocks and sliding mounting blocks are respectively installed on the upper and lower sides, a connecting rod that slides through the side wall of the connecting plate, a sliding groove opened inside the connecting plate, a sliding plate that slides in the sliding groove and is connected to one end of the connecting rod, a contraction spring disposed in the sliding groove and connected to the sliding plate, and a limiting connector disposed on the connecting rod for loading growth raw materials or quartz crucibles. The contraction spring is used to drive the sliding plate to move the connecting rod into the sliding groove.

[0018] Preferably, the limiting connector is configured as a semi-circular ring block located at the end of the connecting rod for placing one end of the quartz crucible.

[0019] Preferably, the quartz crucible has a neck in the middle, and the limiting connector is a semi-circular ring block located at the end of the connecting rod for engaging the neck.

[0020] Preferably, the limiting connector is configured as at least two sets of loading plates located on the connecting rod for placing the growth raw material or quartz crucible, and in this case, the limiting arc plate does not need to be installed on the connecting block. In this case, the connecting rod is set on the side wall of the connecting plate, and the sliding groove, sliding plate and contraction spring do not need to be set inside the connecting block.

[0021] Preferably, multiple sets of compression sealing assemblies are provided at the opening on the other side of the vacuum chamber;

[0022] When the quartz crucible is placed in the high-temperature growth furnace, the connecting plate and the connecting block pass through the opening, and the extrusion sealing assembly cooperates with the connecting plate and the connecting block to seal the opening.

[0023] Preferably, the compression sealing assembly includes a sliding cavity disposed inside the vacuum chamber wall, a sliding block located on the outer periphery of the opening for sliding through the vacuum chamber into the sliding cavity, a first compression spring located inside the sliding cavity for driving the sliding block to move outward from the vacuum chamber, a rubber strip located inside the opening for sliding through the vacuum chamber into the sliding cavity, a triangular wedge located at one end of the rubber strip, a corner groove disposed inside the sliding cavity for sliding at one end of the triangular wedge, a second compression spring located inside the corner groove for driving the triangular wedge to move into the sliding cavity, a limiting groove opened inside the opening, and a limiting slider disposed at the other end of the rubber strip for sliding within the limiting groove.

[0024] Preferably, the rubber strip has a bent portion in the middle, and the sliding block has a pressing inclined portion for contacting the inclined surface of the triangular wedge block on one side of the sliding cavity;

[0025] The raw material installation mechanism also includes a contact ring block located outside the connecting plate and the connecting block. During the process of the connecting plate and the connecting block passing through the opening, the contact ring block contacts and squeezes to drive the sliding block to move into the sliding cavity.

[0026] This invention provides a PECVT plasma-assisted enhanced gas-phase transport synthesis and growth preparation apparatus.

[0027] Compared with the prior art, the beneficial effects of the present invention are reflected in:

[0028] 1. This invention, by setting an RF (radio frequency induction) device on a high-temperature growth furnace and continuously irradiating the interior of the furnace during the gas-phase transport synthesis and growth of materials, can ionize the reaction gas or precursor inside the quartz crucible to form active plasma. The activity of the plasma is used to promote and enhance the reaction, accelerate the material synthesis and growth, and improve the material size and quality. This further reduces the reaction temperature during the chemical vapor transport reaction, accelerates the CVT synthesis reaction, improves the synthesis efficiency, and meets the requirements of material growth and device fabrication.

[0029] 2. By setting up a raw material installation mechanism, this invention can quickly clamp and install quartz crucibles of different sizes according to the material growth requirements in the high-temperature growth furnace, thereby facilitating the rapid loading and unloading of quartz crucibles in the high-temperature growth furnace and improving the operational efficiency of normal gas-phase transport and synthesis of materials in the high-temperature growth furnace.

[0030] 3. By setting up a compression sealing component, the present invention can utilize the contact ring block to contact and compress the sliding block to move into the sliding cavity during the process of the connecting plate and connecting block passing through the opening. This further drives the rubber strip to move into the opening. Since the rubber strip is located inside the opening and is limited to sliding in the limiting groove by the limiting slider, and the connecting plate and connecting block pass through the opening at this time, it can ensure that the vacuum box is connected to the high-temperature growth furnace space is sealed when vacuuming is performed inside the vacuum box or when a protective atmosphere is filled afterward. This ensures that the gas phase transport and synthesis of materials can be carried out normally inside the quartz crucible.

[0031] Of course, any product implementing this invention does not necessarily need to achieve all of the advantages described above at the same time. Attached Figure Description

[0032] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0033] Figure 1 This is an overall perspective view of the first embodiment of the present invention;

[0034] Figure 2 This is a schematic cross-sectional view of the present invention;

[0035] Figure 3 This is a cross-sectional schematic diagram of an RF sensing device disposed inside the connecting block of the present invention;

[0036] Figure 4 This is a cross-sectional schematic diagram of a high-temperature plasma sintering device installed inside the connecting block of the present invention.

[0037] Figure 5 This is a cross-sectional schematic diagram of the vacuum box connection structure of the present invention;

[0038] Figure 6 for Figure 5 Enlarged view of point A in the middle;

[0039] Figure 7 for Figure 6 Enlarged view at point B;

[0040] Figure 8 for Figure 6 A magnified view at point C;

[0041] Figure 9 This is a three-dimensional schematic diagram of the rubber strip connection structure of the present invention;

[0042] Figure 10 This is an overall perspective view of the second embodiment of the present invention;

[0043] Figure 11This is an overall perspective view of the second and third embodiments of the present invention.

[0044] In the picture:

[0045] 1. High-temperature growth furnace; 2. RF radio frequency sensing device; 3. Mounting platform; 4. Guide rail; 5. Sliding mounting block;

[0046] 6. Raw material loading mechanism; 61. Quartz crucible; 611. Neck; 62. Crucible loading assembly; 621. Connecting plate; 622. Connecting rod; 623. Sliding plate; 624. Sliding groove; 625. Contraction spring; 626. Semi-circular ring block; 627. Loading plate; 63. Connecting block; 631. Limiting arc plate; 632. High-temperature plasma sintering device; 64. Connecting handle; 65. Contact ring block;

[0047] 7. Vacuum chamber; 71. Opening; 72. Connecting interface; 73. Valve; 74. Compression sealing assembly; 741. Sliding cavity; 742. Sliding block; 7421. Compression inclined part; 743. First compression spring; 744. Triangular wedge block; 745. Corner groove; 7451. Limiting inclined part; 746. Second compression spring; 747. Rubber strip; 7471. Bending part; 748. Limiting groove; 749. Limiting slider. Detailed Implementation

[0048] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0049] In the first embodiment, see details below. Figures 1 to 9 .

[0050] This invention provides a PECVT (Plasma-Assisted Chemical Transmission) plasma-enhanced gas-phase transport synthesis and growth apparatus, comprising a mounting stage 3, a vacuum chamber 7, a high-temperature growth furnace 1, and an RF (Radio Frequency Induction) device connected in sequence, wherein:

[0051] High-temperature growth furnace 1, with a quartz crucible 61 placed inside for gas-phase transport, synthesis, growth and preparation of materials;

[0052] RF radio frequency sensing device 2 irradiates the interior of high-temperature growth furnace 1 for plasma-assisted enhanced gas phase transport synthesis and growth of materials.

[0053] Vacuum chamber 7 has openings 71 on both sides, and one opening 71 is connected to the interior of high-temperature growth furnace 1 to control the synchronous vacuuming process or the filling of protective atmosphere inside the high-temperature growth furnace 1.

[0054] The mounting platform 3 has a sliding mounting block 5 connected to its top via a guide rail 4. The sliding mounting block 5 is equipped with a raw material mounting mechanism 6 for mounting a quartz crucible 61. The sliding mounting block 5 slides on the guide rail 4 to drive the quartz crucible 61 through the vacuum box 7 into the high-temperature growth furnace 1.

[0055] In specific implementation, by setting an RF radio frequency induction device 2 on the high-temperature growth furnace 1, the quartz crucible 61 is installed on the sliding mounting block 5 using the raw material mounting mechanism 6, and the quartz crucible 61 is driven into the high-temperature growth furnace 1 via the connecting handle 64 on the guide rail 4 for gas-phase transport synthesis and growth of materials. During the gas-phase transport synthesis and growth of materials in the high-temperature growth furnace 1, the RF radio frequency induction device 2 continuously irradiates the interior of the high-temperature growth furnace 1, thereby ionizing the reaction gas or precursor inside the quartz crucible 61 to form active plasma. The activity of the plasma is used to promote and enhance the reaction, accelerate the synthesis and growth of materials, and improve the size and quality of materials. This further reduces the reaction temperature during the chemical vapor transport reaction, promotes the CVT synthesis reaction to proceed faster, improves the synthesis efficiency, and meets the requirements of material growth and device fabrication.

[0056] It should be noted that the high-temperature growth furnace 1 and the RF radio frequency induction device 2 mentioned above are both existing technologies, and their specific structures and operating principles will not be elaborated here.

[0057] Secondly, it should be noted that before the quartz crucible 61 is installed on the sliding mounting block 5, it should be filled with raw materials for gas-phase transport synthesis and growth of materials. The specific principles and steps of gas-phase transport synthesis and growth of materials will not be elaborated here.

[0058] Further reference Figure 5 The vacuum chamber 7 is also equipped with a connection interface 72, through which an external vacuum pump and a protective atmosphere tank can be connected to ensure the normal operation of the reaction when the chemical vapor transport reaction is carried out inside the high-temperature growth furnace 1.

[0059] Furthermore, the connection interface 72 should also be equipped with a valve 73 that connects the external vacuum pump and the protective atmosphere tank to the user control connection interface 72.

[0060] Specifically, the raw material loading mechanism 6 includes a crucible loading assembly 62 located on the sliding mounting block 5, a connecting block 63 connected to the crucible loading assembly 62, and a connecting handle 64 disposed on the connecting block 63 and the sliding mounting block 5 for manually driving the sliding mounting block 5 to slide on the guide rail 4.

[0061] The connecting block 63 is provided with a limiting arc plate 631 to cooperate with the crucible loading assembly 62 to position one end of the quartz crucible 61.

[0062] like Figure 3 and Figure 4 As shown, at this time, the connecting block 63 is equipped with a high-temperature plasma sintering device 632 or another set of RF radio frequency sensing devices 2:

[0063] When a high-temperature plasma sintering device 632 is installed inside the connecting block 63, the high-temperature plasma sintering device 632 can be used to heat seal the open end of the quartz crucible 61 by high-temperature plasma sintering when the limiting arc plate 631 and the crucible loading assembly 62 are used to position and clamp one end of the quartz crucible 61.

[0064] When another set of RF radio frequency sensing devices 2 is installed inside the connecting block 63, with the limiting arc plate 631 and the crucible loading assembly 62 positioning and clamping one end of the quartz crucible 61, after the quartz crucible 61 enters the high-temperature growth furnace 1, the two sets of RF radio frequency sensing devices 2 can be used to irradiate the inside of the high-temperature growth furnace 1 to improve the plasma enhancement effect in the chemical vapor transport reaction process.

[0065] In the specific implementation structure of the raw material installation mechanism 6, such as Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the crucible loading assembly 62 includes a connecting plate 621 on which a connecting block 63 and a sliding mounting block 5 are respectively mounted on the upper and lower sides, a connecting rod 622 that slides through the side wall of the connecting plate 621, a sliding groove 624 opened inside the connecting plate 621, a sliding plate 623 that slides in the sliding groove 624 and is connected to one end of the connecting rod 622, a contraction spring 625 that is disposed in the sliding groove 624 and connected to the sliding plate 623, and a limiting connector disposed on the connecting rod 622 for loading growth raw materials or a quartz crucible 61. The contraction spring 625 is used to drive the sliding plate 623 to move the connecting rod 622 into the sliding groove 624. The limiting connector is a semi-circular ring block 626 located at the end of the connecting rod 622 for placing one end of the quartz crucible 61.

[0066] In practice, by manually pulling the semi-circular ring block 626, quartz crucibles 61 of different sizes can be placed in conjunction with the connecting rod 622. Since the contraction spring 625 drives the sliding plate 623 to move the connecting rod 622 into the sliding groove 624, it can be used in conjunction with the limiting arc plate 631 to clamp and position the quartz crucible 61.

[0067] Therefore, by setting up the raw material installation mechanism 6, and using the semi-circular ring clamp 626 in conjunction with the connecting rod 622 to limit the placement of the quartz crucible 61, it is possible to quickly clamp and install quartz crucibles 61 of different sizes and specifications according to the material growth requirements in the high-temperature growth furnace 1. This facilitates the rapid loading and unloading of the quartz crucible 61 in the high-temperature growth furnace 1 and improves the operational efficiency of normal gas phase transport synthesis and growth of materials in the high-temperature growth furnace 1.

[0068] It should be noted that the quartz crucible 61 can also be opened at one end near the high-temperature growth furnace 1 for use in open-tube PECVT operation.

[0069] For details in the second embodiment, please refer to [link / reference]. Figure 3 , Figure 4 and Figure 10 .

[0070] The present invention provides a PECVT plasma-assisted enhanced gas phase transport synthesis and growth preparation device, which differs from the first embodiment above in that: a neck 611 is provided in the middle of the quartz crucible 61, and the limiting connector is a semi-circular ring block 626 located at the end of the connecting rod 622 for engaging and placing the neck 611.

[0071] Therefore, the crucible loading assembly 62 should include a connecting plate 621 on which the connecting block 63 and the sliding mounting block 5 are respectively installed on the upper and lower sides, a connecting rod 622 that slides through the side wall of the connecting plate 621, a sliding groove 624 opened inside the connecting plate 621, a sliding plate 623 that slides in the sliding groove 624 and is connected to one end of the connecting rod 622, a semi-circular ring block 626 located at the end of the connecting rod 622 for engaging the neck 611, and a contraction spring 625 set in the sliding groove 624 and connected to the sliding plate 623. The contraction spring 625 is used to drive the sliding plate 623 to move the connecting rod 622 into the sliding groove 624.

[0072] In practice, the neck 611 of quartz crucibles 61 of different sizes can be engaged and placed on the semi-circular ring block 626 by manually pulling the semi-circular ring block 626. Since the contraction spring 625 drives the sliding plate 623 to move the connecting rod 622 into the sliding groove 624, it can cooperate with the limiting arc plate 631 to clamp and position the quartz crucible 61.

[0073] Therefore, by locking the neck 611 of the quartz crucible 61 onto the semi-circular ring block 626, it is possible to quickly clamp and install quartz crucibles 61 of different sizes according to the material growth requirements in the high-temperature growth furnace 1. This facilitates the rapid loading and unloading of the quartz crucibles 61 in the high-temperature growth furnace 1 and improves the operational efficiency of normal gas-phase transport and synthesis of materials in the high-temperature growth furnace 1.

[0074] It should be noted that the quartz crucible 61 can also be opened at one end near the high-temperature growth furnace 1 for use in open-tube PECVT operation.

[0075] In the third embodiment, see details below. Figure 3 , Figure 4 and Figure 11 .

[0076] This invention provides a PECVT plasma-assisted enhanced gas phase transport synthesis growth preparation device, which differs from the first embodiment described above in that: the limiting connector is set as at least two sets of loading plates 627 located on the connecting rod 622 for placing growth raw materials or quartz crucible 61, and at this time, the limiting arc plate 631 does not need to be installed on the connecting block 63. At this time, the connecting rod 622 is set on the side wall of the connecting plate 621, and the connecting block 63 does not need to be provided with a sliding groove 624, a sliding plate 623 and a contraction spring 625.

[0077] Therefore, the crucible loading assembly 62 at this time includes a connecting plate 621 on the upper and lower sides respectively mounting the connecting block 63 and the sliding mounting block 5, a connecting rod 622 disposed on the side wall of the connecting plate 621, and at least two sets of loading plates 627 located on the connecting rod 622 for placing the quartz crucible 61 and the growth raw material.

[0078] In practice, the quartz crucible 61 and the growth raw materials can be placed directly on the loading plate 627, and the quartz crucible 61 can be driven into the high-temperature growth furnace 1 by the connecting handle 64 on the guide rail 4 to carry out the gas phase transport synthesis growth material operation.

[0079] It should be noted that the device can also perform PECVD (plasma-assisted vapor deposition) growth at this time.

[0080] In the fourth embodiment, see details below. Figure 1 , Figure 2 , Figures 5 to 9 .

[0081] Based on the above embodiments, such as Figure 2 and Figure 5 As shown, the present invention further provides a PECVT plasma-assisted enhanced gas-phase transport synthesis and growth preparation apparatus, as described in the reference. Figure 1 , Figure 2 , Figure 5 Multiple sets of extrusion sealing components 74 are provided at the opening 71 on the other side of the vacuum chamber 7. When the quartz crucible 61 enters the high-temperature growth furnace 1, the connecting plate 621 and the connecting block 63 pass through the opening 71, and the extrusion sealing components 74 cooperate with the connecting plate 621 and the connecting block 63 to seal the opening 71.

[0082] Specifically, such as Figure 5 , Figure 6 Figure 7 and Figure 8 As shown, the compression sealing assembly 74 includes a sliding cavity 741 disposed inside the wall of the vacuum chamber 7, a sliding block 742 located on the outer periphery of the opening 71 for sliding through the vacuum chamber 7 into the sliding cavity 741, a first compression spring 743 located inside the sliding cavity 741 for driving the sliding block 742 to move outward from the vacuum chamber 7, a rubber strip 747 located inside the opening 71 for sliding through the vacuum chamber 7 into the sliding cavity 741, a triangular wedge 744 located at one end of the rubber strip 747, a corner groove 745 disposed inside the sliding cavity 741 for sliding at one end of the triangular wedge 744, a second compression spring 746 located inside the corner groove 745 for driving the triangular wedge 744 to move into the sliding cavity 741, a limiting groove 748 opened inside the opening 71, and a limiting slider 749 disposed at the other end of the rubber strip 747 for sliding in the limiting groove 748.

[0083] The rubber strip 747 has a bending part 7471 in the middle, and the sliding block 742 is located in the sliding cavity 741 with a pressing inclined part 7421 for contacting the inclined surface of the triangular wedge block 744. At this time, the raw material installation mechanism 6 also includes a contact ring block 65 located outside the connecting plate 621 and the connecting block 63.

[0084] In specific implementation, the connecting plate 621 and the connecting block 63 pass through the opening 71. The contact ring block 65 contacts and squeezes the sliding block 742 to move into the sliding cavity 741. At this time, the squeezing inclined part 7421 of the sliding block 742 contacts and squeezes the triangular wedge block 744 to move into the opening 71. Since the rubber strip 747 is provided with a limit slider 749 at one end in the opening 71, the limit slider 749 is limited to slide in the limit groove 748. At this time, the connecting plate 621 and the connecting block 63 pass through the opening 71, and the bent part 7471 is located at the part of the rubber strip 747 that contacts the connecting plate 621 and the connecting block 63. Therefore, the rubber strip 747 fills the gap between the connecting plate 621, the connecting block 63 and the opening 71 in the opening 71. When the vacuum box 7 is vacuumed, the bent part 7471 of the rubber strip 747 can be guaranteed to move into the vacuum box 7, thereby completing the internal sealing of the vacuum box 7 when the connecting plate 621 and the connecting block 63 pass through the opening 71.

[0085] It should be noted that the rubber strip 747 here is made of fluororubber and other rubber materials with high shape deformation and good air tightness.

[0086] Therefore, by setting the compression sealing component 74, during the process of the connecting plate 621 and the connecting block 63 passing through the opening 71, the contact ring block 65 contacts and compresses the sliding block 742 to move into the sliding cavity 741, thereby further driving the rubber strip 747 to move into the opening 71. Since the rubber strip 747 is located inside the opening 71, one end is limited and slides in the limiting groove 748 by the limiting slider 749. At this time, the connecting plate 621 and the connecting block 63 pass through the opening 71. Therefore, when the vacuum chamber 7 is vacuumed or a protective atmosphere is filled in afterward, the space between the vacuum chamber 7 and the high-temperature growth furnace 1 is sealed, thereby ensuring that the gas phase transport and synthesis of the growth material can be carried out normally inside the quartz crucible 61.

[0087] It can be further explained that, during the process of the triangular wedge 744 sliding in the corner groove 745, one end of the corner groove 745 can also be provided with a limiting inclined part 7451 for limiting the movement of the triangular wedge 744.

[0088] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

[0089] Furthermore, it should be noted that if any directional indication (such as up, down, left, right, front, back, etc.) is involved in the embodiments of the present invention, the directional indication is only used to explain the relative positional relationship and movement of each component in a specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0090] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, in the embodiments of this invention, "multiple" refers to two or more. Moreover, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

Claims

1. A PECVT plasma assisted enhanced vapor transport growth apparatus, comprising: a vacuum chamber; a substrate support disposed within the vacuum chamber; a gas source; a plasma source; and a controller configured to control the gas source and the plasma source. The components include a mounting platform (3), a vacuum chamber (7), a high-temperature growth furnace (1), and an RF sensing device (2), which are connected in sequence. A high-temperature growth furnace (1) is provided, with a quartz crucible (61) placed inside for gas-phase transport and synthesis growth of materials. RF radio frequency sensing device (2) irradiates the interior of high temperature growth furnace (1) for plasma-assisted enhanced gas phase transport synthesis growth to prepare materials; The vacuum chamber (7) has openings (71) on both sides, and one opening (71) is connected to the interior of the high-temperature growth furnace (1) to control the synchronous vacuuming process or the filling of the protective atmosphere inside the high-temperature growth furnace (1). The mounting platform (3) has a sliding mounting block (5) connected to its top via a guide rail (4). The sliding mounting block (5) is equipped with a raw material mounting mechanism (6) for mounting a quartz crucible (61). The sliding mounting block (5) slides on the guide rail (4) to drive the quartz crucible (61) through the vacuum box (7) into the high-temperature growth furnace (1). The raw material installation mechanism (6) includes a crucible loading assembly (62) located on the sliding mounting block (5), a connecting block (63) connected to the crucible loading assembly (62), and a connecting handle (64) provided on the connecting block (63) and the sliding mounting block (5) for manually driving the sliding mounting block (5) to slide on the guide rail (4). The connecting block (63) is provided with a limiting arc plate (631) for cooperating with the crucible loading assembly (62) to position one end of the quartz crucible (61); The connecting block (63) is equipped with a high-temperature plasma sintering device (632) for heat sealing the open end of the quartz crucible (61) by high-temperature plasma sintering. The connecting block (63) is equipped with another set of RF radio frequency sensing devices (2) for irradiating the interior of the high temperature growth furnace (1) after the quartz crucible (61) enters the high temperature growth furnace (1); The quartz crucible (61) has a neck (611) in the middle.

2. The PECVT plasma assisted enhanced vapor transport growth apparatus of claim 1, wherein, The crucible loading assembly (62) includes a connecting plate (621) on the upper and lower sides respectively mounting a connecting block (63) and a sliding mounting block (5), a connecting rod (622) sliding through the side wall of the connecting plate (621), a sliding groove (624) opened inside the connecting plate (621), a sliding plate (623) sliding in the sliding groove (624) and connected to one end of the connecting rod (622), a semi-circular ring block (626) located at the end of the connecting rod (622) for placing one end of the quartz crucible (61), and a contraction spring (625) set in the sliding groove (624) and connected to the sliding plate (623). The contraction spring (625) is used to drive the sliding plate (623) to move the connecting rod (622) into the sliding groove (624).

3. The PECVT plasma assisted enhanced vapor transport growth apparatus of claim 1, wherein, The crucible loading assembly (62) includes a connecting plate (621) on the upper and lower sides respectively mounting a connecting block (63) and a sliding mounting block (5), a connecting rod (622) sliding through the side wall of the connecting plate (621), a sliding groove (624) opened inside the connecting plate (621), a sliding plate (623) sliding in the sliding groove (624) and connected to one end of the connecting rod (622), a semi-circular ring block (626) located at the end of the connecting rod (622) for engaging the neck (611), and a contraction spring (625) set in the sliding groove (624) and connected to the sliding plate (623). The contraction spring (625) is used to drive the sliding plate (623) to move the connecting rod (622) into the sliding groove (624).

4. The PECVT plasma assisted enhanced vapor transport growth apparatus of claim 1, wherein, The crucible loading assembly (62) includes a connecting plate (621) on the upper and lower sides respectively mounting a connecting block (63) and a sliding mounting block (5), a connecting rod (622) disposed on the side wall of the connecting plate (621), and at least two sets of loading plates (627) located on the connecting rod (622) for placing growth raw materials or quartz crucibles (61).

5. The PECVT plasma-assisted enhanced gas-phase transport synthesis and growth apparatus as described in any one of claims 2-4, characterized in that, Multiple sets of compression sealing assemblies (74) are provided at the opening (71) on the other side of the vacuum box (7). When the quartz crucible (61) is in the high-temperature growth furnace (1), the connecting plate (621) and the connecting block (63) pass through the opening (71), and the extrusion sealing assembly (74) cooperates with the connecting plate (621) and the connecting block (63) to seal the opening (71).

6. The PECVT plasma-assisted enhanced gas-phase transport synthesis and growth apparatus as described in claim 5, characterized in that, The compression sealing assembly (74) includes a sliding cavity (741) disposed inside the wall of the vacuum chamber (7), a sliding block (742) located on the outer periphery of the opening (71) for sliding through the vacuum chamber (7) into the sliding cavity (741), a first compression spring (743) located inside the sliding cavity (741) for driving the sliding block (742) to move outward from the vacuum chamber (7), a rubber strip (747) located inside the opening (71) for sliding through the vacuum chamber (7) into the sliding cavity (741), and a rubber strip (747) located inside the opening (71) for sliding through the vacuum chamber (7) into the sliding cavity (741). The rubber strip (747) has a triangular wedge (744) at one end, a corner groove (745) inside the sliding cavity (741) for sliding at one end of the triangular wedge (744), a second compression spring (746) inside the corner groove (745) for driving the triangular wedge (744) to move into the sliding cavity (741), a limiting groove (748) inside the opening (71), and a limiting slider (749) at the other end of the rubber strip (747) for sliding in the limiting groove (748). The rubber strip (747) has a bending part (7471) in the middle. The sliding block (742) has a pressing inclined part (7421) on one side inside the sliding cavity (741) for contacting the inclined surface of the triangular wedge block (744). The raw material installation mechanism (6) also includes a contact ring block (65) located outside the connecting plate (621) and the connecting block (63). During the process of the connecting plate (621) and the connecting block (63) passing through the opening (71), the contact ring block (65) contacts and presses to drive the sliding block (742) to move into the sliding cavity (741).

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