Backlight module, display panel, display terminal and light bar

Abstract

Embodiments of the present application provide a backlight module, a display panel, a display terminal and a lamp strip, and relate to the technical field of light sources, and are used for reducing cost while maintaining the number of backlight source partitions. The backlight module can include a circuit board and a plurality of light emitting chips. The plurality of light emitting chips include a first light emitting chip, the first light emitting chip includes S light emitting devices, S first electrode pads and a second electrode pad. The light emitting device includes at least one PN junction. In addition, the S first electrode pads are electrically connected with the circuit board, and the S first electrode pads are also respectively electrically connected with the first ends of the S light emitting devices one by one, so that the PN junctions of different light emitting devices are connected in parallel. The second electrode pad is electrically connected with the circuit board, and the second electrode pad is also electrically connected with the second ends of the S light emitting devices, realizing a common electrode. A single first light emitting chip has S light emitting devices with brightness that can be controlled independently, and each light emitting device provides an independently controllable light emitting control area.

Description

Technical Field

[0001] This application relates to the field of light source technology, and in particular to a backlight module, a display panel, a display terminal, and a light strip. Background Technology

[0002] Liquid crystal displays (LCDs) are widely used in the display technology field. LCDs require a backlight to display images. The application of micro (or mini) light-emitting diode (LED) technology in backlighting allows for multi-zone control of the backlight, resulting in higher contrast between light and dark areas and improved high dynamic range (HDR). The more zones the backlight has, the better it is for improving HDR; however, this approach cannot meet cost control requirements. Summary of the Invention

[0003] This application provides a backlight module, a display panel, a display terminal, and a light strip, which reduces costs while maintaining the number of backlight zones.

[0004] To achieve the above objectives, this application adopts the following technical solution:

[0005] One aspect of this application provides a backlight module, which may include a circuit board and a plurality of light-emitting chips. The plurality of light-emitting chips are disposed on the circuit board. The plurality of light-emitting chips includes a first light-emitting chip. The first light-emitting chip may include a substrate, S light-emitting devices, S first electrode pads, and second electrode pads. The substrate includes a bearing surface and a light-emitting surface disposed opposite to each other. The bearing surface is close to the circuit board, and the side containing the light-emitting surface is the light-emitting side of the first light-emitting chip. The S light-emitting devices are spaced apart on the bearing surface of the substrate. Each light-emitting device includes at least one PN junction. Wherein, S≥2, and S is a positive integer. Furthermore, the S first electrode pads are disposed on the side of the light-emitting devices close to the circuit board and are electrically connected to the circuit board. The S first electrode pads are also electrically connected to the first terminals of the S light-emitting devices. The second electrode pads are disposed on the side of the light-emitting devices close to the circuit board and are electrically connected to the circuit board, and are electrically connected to the second terminals of the S light-emitting devices.

[0006] In summary, in each first light-emitting chip, the first ends of the S light-emitting devices are all electrically connected to the circuit board via second electrode pads, enabling the PN junctions of different light-emitting devices to share a common electrode. Furthermore, the second ends of the S light-emitting devices are each electrically connected to the circuit board via S first electrode pads, thus allowing the PN junctions of different light-emitting devices to be connected in parallel and controlled independently. In this case, a common voltage can be provided to the second electrode pads, and the voltage applied to each first electrode pad can be controlled individually, thereby allowing individual control of the driving current flowing through each light-emitting device. Ultimately, the brightness of the S light-emitting devices in the first light-emitting chip can be controlled individually. Based on this, a single first light-emitting chip can have S light-emitting devices with individually controllable brightness, and each light-emitting device can provide an independently controllable light-emitting control area for the first light-emitting chip, resulting in a single first light-emitting chip having at least two zones. In this way, while maintaining the same number of zones in the backlight module, the number of first light-emitting chips can be reduced, thereby achieving cost reduction.

[0007] In one optional implementation, the light-emitting device includes a PN junction, which comprises a first semiconductor doped layer and a second semiconductor doped layer stacked together. In the light-emitting device, the first semiconductor doped layer of each PN junction serves as a terminal and is electrically connected to a first electrode pad. The second semiconductor doped layer of any PN junction serves as the second terminal of the light-emitting device and is electrically connected to a second electrode pad. The first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer. Alternatively, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer.

[0008] In this way, the first semiconductor doped layer of each PN junction can serve as the first end of the light-emitting device and be electrically connected to a first electrode pad. Based on this, when the first light-emitting chip is flip-chip mounted on a circuit board, the circuit board can supply power to the first semiconductor doped layer of the light-emitting device electrically connected to each first electrode pad through different first electrode pads. Furthermore, the second semiconductor doped layer of any PN junction can serve as the second end of the light-emitting device and be electrically connected to a second electrode pad. Based on this, when the first light-emitting chip can be flip-chip mounted on a circuit board, the circuit board can supply power to the second semiconductor doped layers of all light-emitting devices electrically connected to the second electrode pad through the second electrode pad, thus achieving a common electrode. In this case, when the driving circuit in the circuit board provides voltage to the S first electrode pads and one second electrode pad, an external electric field can be formed for each light-emitting device in the first light-emitting chip. The magnitude of this external electric field can control the magnitude of the current flowing through each light-emitting device, thereby controlling the number of photons excited in the multi-quantum well layer of each light-emitting device, achieving the purpose of controlling the luminous brightness of each light-emitting device in the first light-emitting chip.

[0009] In one optional implementation, the light-emitting device includes M sequentially arranged PN junctions, each PN junction comprising a first semiconductor doped layer and a second semiconductor doped layer stacked together. M ≥ 2, where M is a positive integer. Furthermore, in each of the M sequentially arranged PN junctions of the light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first terminal of the light-emitting device and is electrically connected to a first electrode pad; the second semiconductor doped layer of the Mth PN junction serves as the second terminal of the light-emitting device and is electrically connected to a second electrode pad; and the first semiconductor doped layer of one of two adjacent PN junctions is electrically connected to the second semiconductor doped layer of the other PN junction. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer.

[0010] In this configuration, the first PN junctions of the S different light-emitting devices in the first light-emitting chip can be electrically connected to each of the S first electrode pads. The circuit board can supply power to the first semiconductor doped layer of the first PN junction in each light-emitting device electrically connected to the first electrode pad via different first electrode pads. Furthermore, a second electrode pad can be electrically connected to the second semiconductor doped layers of the S PN junctions to achieve a common electrode configuration. The circuit board can supply power to the second semiconductor doped layer of the Mth PN junction among all light-emitting devices electrically connected to the second electrode pad via the second electrode pad, thereby connecting the PN junctions of different light-emitting devices in parallel. Based on this, the second semiconductor doped layer of one PN junction in two adjacent PN junctions can be electrically connected to the first semiconductor doped layer of the other PN junction, thereby connecting two adjacent PN junctions in each light-emitting device in series, achieving the purpose of increasing the driving voltage of each light-emitting device.

[0011] In one optional implementation, the backlight module further includes multiple light control structures disposed on the light-emitting side of the first light-emitting chip. One light control structure covers one first light-emitting chip. Each light control structure includes S interconnected light control units, each covering a light-emitting device; the surface of the light control unit away from the light-emitting device is curved. The curved surface is used to change the direction of light transmission, causing the light control unit to emit the received light along a preset direction. The preset direction is the direction away from the connection point of the S light control units. S is an even number, and the preset directions of the emitted light from adjacent light control units are different. In this way, since the brightness of the two light-emitting devices in the same first light-emitting chip can be controlled independently to achieve two different zones, the crosstalk between the light emitting areas of the two light-emitting devices can be reduced by setting the above-mentioned light control structure, thus enhancing the light energy of a single zone. Based on this, when one light-emitting device in the first light-emitting chip is turned off and the other is turned on, the area where the off light-emitting device is located can be significantly darkened, thereby improving the HDR of the display terminal.

[0012] In one optional implementation, the first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the substrate's bearing surface. The isolation trench is disposed between two adjacent light-emitting devices. The light control section has a first cross-section, which is perpendicular to the bearing surface and intersects the extending direction of the isolation trench. The shape of the first cross-section, away from the light-emitting device, includes a straight segment and a first curved segment. The straight segment is inclined, and the distance between the end of the straight segment near the isolation trench and the bearing surface is less than the distance between the end of the straight segment away from the isolation trench and the bearing surface. The first curved segment is disposed at the end of the straight segment away from the isolation trench and connects to the straight segment. Along the direction away from the isolation trench, the distance from each point on the first curved segment to the bearing surface gradually decreases. Most of the light emitted by the portion of the light-emitting device near the isolation trench will illuminate the curved surface of the light control section where the straight segment is located, covering the light-emitting device. This curved surface can emanate the light from the light-emitting device and deflect most of the light away from the isolation trench. Furthermore, most of the light emitted by the portion of the light-emitting device away from the isolation trench will illuminate the curved surface of the light control section where the first curved segment is located, covering the light-emitting device. This curved surface can direct light from the light-emitting devices, deflecting most of the light away from the isolation groove. In this way, the light control structure can direct light from different light-emitting devices within a single first light-emitting chip in different directions, reducing the probability of crosstalk between the light emitted by the two devices.

[0013] In one optional implementation, the first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the substrate's bearing surface. The isolation trench is disposed between two adjacent light-emitting devices. The light control unit has a first cross-section, which is perpendicular to the bearing surface and intersects the extending direction of the isolation trench. The shape of the first cross-section includes a second curved segment on the side away from the light-emitting device. Along the direction away from the isolation trench, the distance from each point on the second curved segment to the bearing surface gradually increases. Here, S is an even number; the light control unit is used to perform total internal reflection of the received light through the curved surface where the second curved segment is located, and to emit the total internally reflected light from the side surface away from the isolation trench. The light emitted by the light-emitting device illuminates the curved surface where the second curved segment is located in the light control unit covering the light-emitting device. This curved surface can perform total internal reflection of the light from the light-emitting device, and the total internally reflected light will be emitted from the side surface of the light control unit away from the isolation trench, thereby enabling the light control unit to preset the direction of the light from the light-emitting device, i.e., to emit it in the direction away from the isolation trench. In this way, the light control structure can direct the light from different light-emitting devices in a single first light-emitting chip to different directions, reducing the probability of crosstalk between the light emitted by the two light-emitting devices.

[0014] In one optional implementation, the light control unit has a second cross-section, which is perpendicular to the bearing surface and perpendicular to the first direction. The shape of the second cross-section includes arc segments on the sides away from the light-emitting devices. When S=2, the vertical projection of the first light-emitting chip onto the bearing surface is a first rectangle. The first rectangle has a first long side L1 along the first direction and a first short side L2 along the second direction, with the ratio of the first long side L1 to the first short side L2 being L1:L2≥1.5:1. The first direction is perpendicular to the extension direction of the isolation trench and parallel to the bearing surface. The second direction is parallel to the extension direction of the isolation trench and parallel to the bearing surface. In this case, the first rectangle can be a long strip. Since the first light-emitting chip includes two light-emitting devices, the vertical projection of any one of the light-emitting devices onto the bearing surface of the substrate can be approximately a square. Based on this, the distances between the two ends of the light-emitting device and its center are approximately equal along the second direction. Furthermore, since the shape of the second cross-section includes arc segments on the sides away from the light-emitting devices, the distances from the light emitted from each point of the light-emitting device to the aforementioned arc segments can be approximately equal. This allows the light received by the light control unit to be uniform, thereby improving the uniformity of the light emitted by the light control unit and further improving the uniformity of the light emitted from each zone of the first light-emitting chip.

[0015] In one optional implementation, the light control unit has a second cross-section, which is perpendicular to the bearing surface and perpendicular to the first direction. The shape of the second cross-section includes arc segments on the sides away from the light-emitting devices. When S=4, the vertical projection of the first light-emitting chip onto the bearing surface is a second rectangle, which has a second long side L3 along the first direction and a second short side L4 along the second direction. The ratio of the second long side L3 to the second short side L4 is: L3:L4≤1.2:1. The first direction is perpendicular to the extension direction of the isolation trench and parallel to the bearing surface; the second direction is parallel to the extension direction of the isolation trench and parallel to the bearing surface. Based on this, the second rectangle is approximately square. Since the first light-emitting chip includes four light-emitting devices, the vertical projection of any one of the light-emitting devices onto the bearing surface of the substrate can be approximately square. Based on this, the distances between the two ends of the light-emitting device and the center of the light-emitting device are approximately equal along the second direction. Furthermore, since the shape of the second cross-section includes arc segments on the sides away from the light-emitting devices, the distances from the light emitted from each point of the light-emitting device to the aforementioned arc segments can be approximately equal. This allows the light received by the light control unit to be uniform, thereby improving the uniformity of the light emitted by the light control unit and further improving the uniformity of the light emitted from each zone of the first light-emitting chip.

[0016] In one optional implementation, the backlight module further includes multiple reflective structures disposed on a circuit board, with one reflective structure surrounding at least a portion of a first light-emitting chip. Each reflective structure has a reflective surface used to reflect light emitted from the first light-emitting chip. Thus, when light emitted from the light-emitting device in the first light-emitting chip is incident on the reflective surface of the reflective structure, the reflective surface can reflect the incident light, thereby increasing the light energy and uniformity of the light emitted from the first light-emitting chip.

[0017] In one optional implementation, the reflective structure includes a first reflective barrier and multiple second reflective barriers. The first reflective barrier is arranged around the perimeter of the first light-emitting chip, forming a reflective area. At least one second reflective barrier is located within the reflective area. One end of each second reflective barrier is connected to the first reflective barrier, and the other end extends between two adjacent light-emitting devices in the first light-emitting chip. The second reflective barriers divide the reflective area into multiple sub-reflective areas, with each light-emitting device located within one sub-reflective area. The reflective surface includes the surface of the first reflective barrier near the first light-emitting chip and the surface of the second reflective barrier near the sub-reflective area. Therefore, light emitted by a light-emitting device located within the first sub-reflective area can be reflected into the first sub-reflective area by the reflective surface formed by the first and second reflective barriers. Similarly, light emitted by a light-emitting device located within the second sub-reflective area can be reflected into the second sub-reflective area by the reflective surface formed by the first and second reflective barriers. In this way, the light energy and uniformity of different light-emitting devices in a single first light-emitting chip can be increased respectively, so that the light emitted by the light-emitting devices located in different partitions in a single first light-emitting chip can all correspond to the position of the 1-peak Gaussian light distribution, that is, the light emitted by the light-emitting devices can all satisfy the characteristic of bright in the middle and dark at the edge.

[0018] In one optional implementation, the first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the substrate's bearing surface. The reflective structure has a third cross-section, which is perpendicular to the circuit board and intersects the extending direction of the isolation trench. The third cross-section is triangular in shape, with the base of the triangle located on one side of the circuit board. This allows the opening size of the reflective structure away from the circuit board to be larger than the opening size of the reflective structure close to the circuit board, making the reflective structure funnel-shaped, which is beneficial for light emission.

[0019] In one alternative implementation, the reflective structure is made of at least one metallic material, such as Al (aluminum), Ag (silver), Pt (platinum), Au (gold), Cu (copper), Ti (titanium), and Cr (chromium). Alternatively, the reflective structure may be made of a white resin material, such as polycarbonate (PC).

[0020] In one alternative implementation, the reflective structure includes a support portion and a metal reflective portion. The support portion is disposed on a circuit board, and a metal reflective sheet covers the surface of the support portion. In this way, by using a metal reflective sheet to cover the surface of the support portion, the outer surface of the metal reflective sheet can serve as the reflective surface of the reflective structure, reflecting incident light. Since a portion of the reflective structure is made of metal, it helps to reduce production costs.

[0021] In one optional implementation, the value of M ranges from 2 to 8. When the driving voltage of a single light-emitting device is 3V, and the value of M in the PN junctions connected in series in each light-emitting device 221 is in the range of 2 to 8, the driving voltage of the front-end driving power supply electrically connected to the first light-emitting chip 22 can range from 6V to 24V. This achieves two advantages: First, by increasing the driving voltage of the entire first light-emitting chip, it can be matched with the driving voltage of the aforementioned front-end driving power supply, eliminating the need for an additional boost circuit between the first light-emitting chip 22 and the aforementioned front-end driving power supply, thus simplifying the circuit structure and reducing costs. Second, when the driving power of the first light-emitting chip remains constant, increasing the driving voltage of the entire first light-emitting chip reduces the current flowing through it, thereby correspondingly reducing the size of the circuit board, simplifying the structural size of the backlight module, and facilitating the realization of ultra-thin display terminals.

[0022] In one optional implementation, the circuit board includes at least one first sub-circuit board and multiple second sub-circuit boards. The first sub-circuit board is strip-shaped. The second sub-circuit boards are strip-shaped and intersect with the first sub-circuit boards. One end of each second sub-circuit board is connected to one end of the first sub-circuit board, and there is a gap between adjacent second sub-circuit boards. A portion of the multiple first light-emitting chips is disposed on the first sub-circuit board, and another portion is disposed on the second sub-circuit boards. Because there is a gap between adjacent second sub-circuit boards, the circuit board composed of the first sub-circuit board and the multiple second sub-circuit boards is not a complete circuit board; it has a cutout area, i.e., the area where the gap between adjacent second sub-circuit boards is located. This reduces the amount of board material used in manufacturing the circuit board, thus reducing costs.

[0023] In one alternative implementation, multiple first light-emitting chip arrays are arranged on a circuit board to ensure that the light emitted by the backlight module is uniform.

[0024] In another aspect, this application provides a backlight module comprising a circuit board and a plurality of light-emitting chips disposed on the circuit board. The plurality of light-emitting chips includes a first light-emitting chip, which comprises a substrate, a first light-emitting device, a second light-emitting device, a left first electrode pad, a right first electrode pad, and a second electrode pad. The substrate has a bearing surface and a light-emitting surface disposed opposite to each other; the bearing surface is close to the circuit board, and the side containing the light-emitting surface is the light-emitting side of the first light-emitting chip. The first light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate. The second light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate and spaced apart from the first light-emitting device. The left first electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to a first end of the first light-emitting device and the circuit board. The right first electrode pad is disposed on the side of the second light-emitting device close to the circuit board and is electrically connected to a first end of the second light-emitting device and the circuit board. The second electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to the circuit board; the second electrode pad is also electrically connected to a second end of the first light-emitting device and the second end of the second light-emitting device. This backlight module has the same beneficial effects as the backlight module provided in the aforementioned embodiments, and will not be repeated here.

[0025] In one optional implementation, either the first light-emitting device or the second light-emitting device includes a PN junction, which comprises a first semiconductor doped layer and a second semiconductor doped layer stacked together. Furthermore, in the first light-emitting device, the first semiconductor doped layer of the PN junction serves as the first end of the first light-emitting device and is electrically connected to the left first electrode pad, and the second semiconductor doped layer of the PN junction serves as the second end of the first light-emitting device and is electrically connected to the second electrode pad. In the second light-emitting device, the first semiconductor doped layer of the PN junction serves as the first end of the second light-emitting device and is electrically connected to the right first electrode pad, and the second semiconductor doped layer of the PN junction serves as the second end of the second light-emitting device and is electrically connected to the second electrode pad. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of the first light-emitting chip including two light-emitting devices and two first electrode pads are as described above and will not be repeated here.

[0026] In one optional implementation, either the first light-emitting device or the second light-emitting device includes two sequentially arranged PN junctions, each PN junction including a first semiconductor doped layer and a second semiconductor doped layer stacked together. The two sequentially arranged PN junctions are respectively the first PN junction and the second PN junction. In the first light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the first light-emitting device and is electrically connected to the left first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the first light-emitting device and is electrically connected to the second electrode pad. In the second light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the second light-emitting device and is electrically connected to the right first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the second light-emitting device and is electrically connected to the second electrode pad. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of either the first light-emitting device or the second light-emitting device including two PN junctions in series are as described above, and will not be repeated here.

[0027] In another aspect, this application provides a backlight module comprising a circuit board and a plurality of light-emitting chips disposed on the circuit board. The plurality of light-emitting chips includes a first light-emitting chip, which comprises a substrate, a first light-emitting device, a second light-emitting device, a third light-emitting device, a fourth light-emitting device, and upper left, lower left, upper right, and lower right first electrode pads. The substrate has a bearing surface and a light-emitting surface disposed opposite to each other; the bearing surface is close to the circuit board, and the side containing the light-emitting surface is the light-emitting side of the first light-emitting chip. The first light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate. The second light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate. The third light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate. The fourth light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate. The first, second, third, and fourth light-emitting devices are spaced apart. Furthermore, the upper left first electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to a first end of the first light-emitting device and the circuit board. The lower left first electrode pad is disposed on the side of the second light-emitting device near the circuit board and is electrically connected to the first end of the second light-emitting device and the circuit board. The upper right first electrode pad is disposed on the side of the third light-emitting device near the circuit board and is electrically connected to the first end of the third light-emitting device and the circuit board. The lower right first electrode pad is disposed on the side of the fourth light-emitting device near the circuit board and is electrically connected to the first end of the fourth light-emitting device and the circuit board. The second electrode pad is disposed on the side of the first light-emitting device near the circuit board and is electrically connected to the circuit board; the second electrode pad is also electrically connected to the second end of the first light-emitting device, the second end of the second light-emitting device, the second end of the third light-emitting device, and the second end of the fourth light-emitting device. This backlight module has the same beneficial effects as the backlight module provided in the aforementioned embodiment, and will not be repeated here.

[0028] In one optional implementation, any one of the first, second, third, and fourth light-emitting devices includes a PN junction. The PN junction includes a first semiconductor doped layer and a second semiconductor doped layer stacked together. In the first light-emitting device, the first semiconductor doped layer of the PN junction serves as the first end of the first light-emitting device and is electrically connected to the upper left first electrode pad. The second semiconductor doped layer of the PN junction serves as the second end of the first light-emitting device and is electrically connected to the second electrode pad. In the second light-emitting device, the first semiconductor doped layer of the PN junction serves as the first end of the second light-emitting device and is electrically connected to the lower left first electrode pad. The second semiconductor doped layer of the PN junction serves as the second end of the second light-emitting device and is electrically connected to the second electrode pad. In the third light-emitting device, the first semiconductor doped layer of the PN junction serves as the first end of the third light-emitting device and is electrically connected to the upper right first electrode pad. The second semiconductor doped layer of the PN junction serves as the second end of the third light-emitting device and is electrically connected to the second electrode pad. In the fourth light-emitting device, the first semiconductor doped layer of the PN junction serves as the first end of the fourth light-emitting device and is electrically connected to the lower right first electrode pad. The second semiconductor doped layer of the PN junction serves as the second end of the fourth light-emitting device and is electrically connected to the second electrode pad. In this configuration, the first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of the first light-emitting chip comprising four light-emitting devices and four first electrode pads are as described above and will not be repeated here.

[0029] In one optional implementation, any one of the first, second, third, and fourth light-emitting devices includes two sequentially arranged PN junctions. Each PN junction includes a first semiconductor doped layer and a second semiconductor doped layer stacked together. The two sequentially arranged PN junctions are the first PN junction and the second PN junction. In the first light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the first light-emitting device and is electrically connected to the upper left first electrode pad. The second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction. The second semiconductor doped layer of the second PN junction serves as the second end of the first light-emitting device and is electrically connected to the second electrode pad. In the second light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the second light-emitting device and is electrically connected to the lower left first electrode pad. The second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction. The second semiconductor doped layer of the second PN junction serves as the second end of the second light-emitting device and is electrically connected to the second electrode pad. In the third light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the third light-emitting device and is electrically connected to the upper right first electrode pad. The second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction, and the second semiconductor doped layer of the second PN junction serves as the second end of the third light-emitting device and is electrically connected to the second electrode pad. Furthermore, in the fourth light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the fourth light-emitting device and is electrically connected to the lower right first electrode pad. The second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction, and the second semiconductor doped layer of the second PN junction serves as the second end of the fourth light-emitting device and is electrically connected to the second electrode pad. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of any one of the first, second, third, and fourth light-emitting devices including two tandem PN junctions are as described above and will not be repeated here.

[0030] Another aspect of this application provides a display terminal including a liquid crystal display panel and any of the aforementioned backlight modules. The backlight module is disposed on the back side of the liquid crystal display panel and is used to provide a backlight source to the liquid crystal display panel. This display terminal has the same beneficial effects as the backlight module provided in the foregoing embodiments, and will not be repeated here.

[0031] In another aspect, this application provides a display panel that may include a circuit board and a plurality of light-emitting chips disposed on the circuit board. The plurality of light-emitting chips includes a first light-emitting chip. The first light-emitting chip may include a substrate, S light-emitting devices, S first electrode pads, and second electrode pads. The substrate includes a support surface and a light-emitting surface disposed opposite to each other. The support surface is close to the circuit board, and the side containing the light-emitting surface is the light-emitting side of the first light-emitting chip. The S light-emitting devices are spaced apart on the support surface of the substrate. Each light-emitting device includes at least one PN junction. Wherein, S ≥ 2, and S is a positive integer. Furthermore, the S first electrode pads are disposed on the side of the light-emitting devices close to the circuit board and are electrically connected to the circuit board. The S first electrode pads are also electrically connected to the first ends of the S light-emitting devices. The second electrode pads are disposed on the side of the light-emitting devices close to the circuit board and are electrically connected to the circuit board, and are electrically connected to the second ends of the S light-emitting devices. The above display panel has the same beneficial effects as the backlight module provided in the foregoing embodiments, and will not be repeated here.

[0032] In one optional implementation, the light-emitting device includes a PN junction, which comprises a first semiconductor doped layer and a second semiconductor doped layer stacked together. In the light-emitting device, the first semiconductor doped layer of each PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad. The second semiconductor doped layer of any PN junction serves as the second end of the light-emitting device and is electrically connected to a second electrode pad. The first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer. Alternatively, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of the connection method between the first and second semiconductor doped layers of the PN junction and the first and second electrode pads are as described above and will not be repeated here.

[0033] In one optional implementation, the light-emitting device includes M sequentially arranged PN junctions, each PN junction comprising a first semiconductor doped layer and a second semiconductor doped layer stacked together. M ≥ 2, where M is a positive integer. Furthermore, in each of the M sequentially arranged PN junctions of the light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad; the second semiconductor doped layer of the Mth PN junction serves as the second end of the light-emitting device and is electrically connected to a second electrode pad; and the first semiconductor doped layer of one of two adjacent PN junctions is electrically connected to the second semiconductor doped layer of the other PN junction. The first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of the connection method between the first and second semiconductor doped layers of the PN junctions and the first and second electrode pads are as described above and will not be repeated here.

[0034] In one optional implementation, the display panel further includes multiple light control structures disposed on the light-emitting side of the first light-emitting chip. One light control structure covers one first light-emitting chip. Each light control structure includes S interconnected light control units, each covering a light-emitting device; the surface of the light control unit away from the light-emitting device is curved. The curved surface is used to change the direction of light transmission, causing the light control unit to emit the received light along a preset direction. The preset direction is the direction away from the connection point of the S light control units. S is an even number, and the preset directions of the emitted light from two adjacent light control units are different. The beneficial effects of the above-described light control structure are the same as described above and will not be repeated here.

[0035] In one optional implementation, the first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the substrate's bearing surface. The isolation trench is disposed between two adjacent light-emitting devices. The light control section has a first cross-section, which is perpendicular to the bearing surface and intersects the extending direction of the isolation trench. The shape of the first cross-section, away from the light-emitting device, includes a straight segment and a first curved segment. The straight segment is inclined, and the distance between the end of the straight segment near the isolation trench and the bearing surface is less than the distance between the end of the straight segment away from the isolation trench and the bearing surface. The first curved segment is disposed at the end of the straight segment away from the isolation trench and connects to the straight segment. Along the direction away from the isolation trench, the distance from each point on the first curved segment to the bearing surface gradually decreases. Most of the light emitted by the portion of the light-emitting device near the isolation trench will illuminate the curved surface of the light control section where the straight segment is located, covering the light-emitting device. This curved surface can emanate the light from the light-emitting device and deflect most of the light away from the isolation trench. Furthermore, most of the light emitted by the portion of the light-emitting device away from the isolation trench will illuminate the curved surface of the light control section where the first curved segment is located, covering the light-emitting device. This curved surface can direct light from the light-emitting device and deflect most of the light away from the isolation groove. The beneficial effects of the first cross-sectional shape of the light control section are as described above and will not be repeated here.

[0036] In one optional implementation, the first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the support surface of the substrate. The isolation trench is disposed between two adjacent light-emitting devices. The light control unit has a first cross-section, which is perpendicular to the support surface and intersects the extending direction of the isolation trench. The shape of the first cross-section includes a second curved segment on the side away from the light-emitting device. Along the direction away from the isolation trench, the distance from each point on the second curved segment to the support surface gradually increases. Here, S is an even number; the light control unit is used to perform total internal reflection of the received light through the curved surface where the second curved segment is located, and to emit the total internally reflected light from the surface of the light control unit away from the isolation trench. The light emitted by the light-emitting device illuminates the curved surface where the second curved segment is located in the light control unit covering the light-emitting device. This curved surface can perform total internal reflection of the light from the light-emitting device, and the total internally reflected light will be emitted from the surface of the light control unit away from the isolation trench, thereby enabling the light control unit to preset the direction of the light from the light-emitting device, that is, to emit it in the direction away from the isolation trench. The beneficial effects of the shape of the first cross-section of the light control unit are the same as described above, and will not be repeated here.

[0037] In one optional implementation, the light control unit has a second cross-section, which is perpendicular to the bearing surface and perpendicular to the first direction. The shape of the second cross-section includes arc segments on the sides away from the light-emitting devices. When S=2, the vertical projection of the first light-emitting chip onto the bearing surface is a first rectangle. The first rectangle has a first long side L1 along the first direction and a first short side L2 along the second direction, with the ratio of the first long side L1 to the first short side L2 being L1:L2≥1.5:1. The first direction is perpendicular to the extension direction of the isolation trench and parallel to the bearing surface. The second direction is parallel to the extension direction of the isolation trench and parallel to the bearing surface. In this case, the first rectangle can be a long strip. Since the first light-emitting chip includes two light-emitting devices, the vertical projection of any one of the light-emitting devices onto the bearing surface of the substrate can be approximately a square. Based on this, the distances between the two ends of the light-emitting device and its center are approximately equal along the second direction. Furthermore, since the shape of the second cross-section includes arc segments on the sides away from the light-emitting devices, the distances from the light emitted from each point of the light-emitting device to the aforementioned arc segments can be approximately equal. The beneficial effects of the second cross-sectional shape of the light control unit are as described above and will not be repeated here.

[0038] In one optional implementation, the light control unit has a second cross-section, which is perpendicular to the bearing surface and perpendicular to the first direction. The shape of the second cross-section includes arc segments on the sides away from the light-emitting devices. When S=4, the vertical projection of the first light-emitting chip onto the bearing surface is a second rectangle, which has a second long side L3 along the first direction and a second short side L4 along the second direction. The ratio of the second long side L3 to the second short side L4 is: L3:L4≤1.2:1. The first direction is perpendicular to the extension direction of the isolation trench and parallel to the bearing surface; the second direction is parallel to the extension direction of the isolation trench and parallel to the bearing surface. Based on this, the second rectangle is approximately square. Since the first light-emitting chip includes four light-emitting devices, the vertical projection of any one of the light-emitting devices onto the bearing surface of the substrate can be approximately square. Based on this, the distances between the two ends of the light-emitting device and the center of the light-emitting device are approximately equal along the second direction. Furthermore, since the shape of the second cross-section includes arc segments on the sides away from the light-emitting devices, the distances from the light emitted from each point of the light-emitting device to the aforementioned arc segments can be approximately equal. The beneficial effects of the second cross-sectional shape of the light control unit are as described above and will not be repeated here.

[0039] In one alternative implementation, the display panel further includes multiple reflective structures disposed on a circuit board, with each reflective structure surrounding at least a portion of a first light-emitting chip. Each reflective structure has a reflective surface for reflecting light emitted from the first light-emitting chip. The beneficial effects of the reflective structures are as described above and will not be repeated here.

[0040] In one optional implementation, the reflective structure includes a first reflective barrier and multiple second reflective barriers. The first reflective barrier is arranged around the perimeter of the first light-emitting chip, forming a reflective area. At least one second reflective barrier is located within the reflective area. One end of each second reflective barrier is connected to the first reflective barrier, and the other end extends between two adjacent light-emitting devices in the first light-emitting chip. The second reflective barriers divide the reflective area into multiple sub-reflective areas, with each light-emitting device located within one sub-reflective area. The reflective surface includes the surface of the first reflective barrier near the first light-emitting chip and the surface of the second reflective barrier near the sub-reflective area. Therefore, light emitted by a light-emitting device located within the first sub-reflective area can be reflected into the first sub-reflective area by the reflective surface formed by the first and second reflective barriers. Similarly, light emitted by a light-emitting device located within the second sub-reflective area can be reflected into the second sub-reflective area by the reflective surface formed by the first and second reflective barriers. The beneficial effects of the first reflective barrier and multiple second reflective barriers are as described above and will not be repeated here.

[0041] In one alternative implementation, the display panel has multiple pixels, and at least three first light-emitting chips located within the same pixel emit light of the three primary colors, respectively. In this case, the display panel can be a self-emissive display panel.

[0042] In one alternative implementation, the display panel has multiple pixels and further includes a color conversion layer located on the light-emitting side of the first light-emitting chips. The color conversion layer is used to convert light emitted by at least three first light-emitting chips located within the same pixel into primary colors of light. In this case, the display panel can be a self-emissive display panel.

[0043] In another aspect, this application provides a display terminal, which includes a processor and any of the display panels described above. The display panel is electrically connected to the processor. The aforementioned display panel has the same beneficial effects as the backlight module provided in the foregoing embodiments, and will not be repeated here.

[0044] In another aspect, this application provides a light strip, which includes a circuit board and a plurality of light-emitting chips disposed on the circuit board. The plurality of light-emitting chips includes a first light-emitting chip. The first light-emitting chip may include a substrate, S light-emitting devices, S first electrode pads, and second electrode pads. The substrate includes a bearing surface and a light-emitting surface disposed opposite to each other. The bearing surface is close to the circuit board, and the side containing the light-emitting surface is the light-emitting side of the first light-emitting chip. The S light-emitting devices are spaced apart on the bearing surface of the substrate. Each light-emitting device includes at least one PN junction. Wherein, S ≥ 2, and S is a positive integer. Furthermore, the S first electrode pads are disposed on the side of the light-emitting devices close to the circuit board and are electrically connected to the circuit board. The S first electrode pads are also electrically connected to the first ends of the S light-emitting devices. The second electrode pads are disposed on the side of the light-emitting devices close to the circuit board and are electrically connected to the circuit board, and are electrically connected to the second ends of the S light-emitting devices. The above display panel has the same beneficial effects as the backlight module provided in the foregoing embodiments, and will not be repeated here.

[0045] In one optional implementation, the light-emitting device includes a PN junction, which comprises a first semiconductor doped layer and a second semiconductor doped layer stacked together. In the light-emitting device, the first semiconductor doped layer of each PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad. The second semiconductor doped layer of any PN junction serves as the second end of the light-emitting device and is electrically connected to a second electrode pad. The first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer. Alternatively, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of the connection method between the first and second semiconductor doped layers of the PN junction and the first and second electrode pads are as described above and will not be repeated here.

[0046] In one optional implementation, the light-emitting device includes M sequentially arranged PN junctions, each PN junction comprising a first semiconductor doped layer and a second semiconductor doped layer stacked together. M ≥ 2, where M is a positive integer. Furthermore, in each of the M sequentially arranged PN junctions of the light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad; the second semiconductor doped layer of the Mth PN junction serves as the second end of the light-emitting device and is electrically connected to a second electrode pad; and the first semiconductor doped layer of one of two adjacent PN junctions is electrically connected to the second semiconductor doped layer of the other PN junction. The first semiconductor doped layer is a P-type semiconductor doped layer, and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer, and the second semiconductor doped layer is a P-type semiconductor doped layer. The beneficial effects of the connection method between the first and second semiconductor doped layers of the PN junctions and the first and second electrode pads are as described above and will not be repeated here.

[0047] In summary, in the backlight module, display panel, or light strip provided by this application, the multiple light-emitting chips on the circuit board may include a first light-emitting chip. In this first light-emitting chip, the second ends of S light-emitting devices are all electrically connected to the circuit board via a second electrode pad, enabling the PN junctions of different light-emitting devices to achieve a common electrode. Furthermore, the second ends of the S light-emitting devices are each electrically connected to the circuit board via S first electrode pads, allowing the PN junctions of different light-emitting devices to be controlled independently. This approach achieves two advantages: firstly, by maintaining the same number of partitions, the number of first light-emitting chips can be reduced, thereby lowering costs; secondly, by maintaining the same number of first light-emitting chips, more partitions can be obtained. Attached Figure Description

[0048] Figure 1A This is a schematic diagram of the structure of a display terminal provided in an embodiment of this application;

[0049] Figure 1B for Figure 1A The diagram shows a schematic of a pixel circuit arrayed in a display terminal.

[0050] Figure 2 for Figure 1A A schematic diagram of a backlight panel;

[0051] Figure 3A For along Figure 2 A partial schematic diagram of the top view of the structure obtained from direction A;

[0052] Figure 3B For along Figure 3A A schematic diagram of the unfolded sectional view obtained by cutting along the dashed line CC in the diagram;

[0053] Figure 4 A schematic diagram of a circuit structure for a backlight module provided in an embodiment of this application;

[0054] Figure 5A For along Figure 2 A partial schematic diagram of the top view of the structure obtained from direction B;

[0055] Figure 5B For along Figure 3A A schematic diagram of the unfolded cross-sectional view obtained by cutting along the dashed line OO in the figure;

[0056] Figure 6 This is a schematic diagram of another circuit structure of the backlight module provided in the embodiments of this application;

[0057] Figure 7A For along Figure 2 A partial schematic diagram of another top view of the structure obtained from direction A;

[0058] Figure 7B For along Figure 7A The sectional view obtained by cutting along the dashed line DD in the figure;

[0059] Figure 7C For along Figure 7A The sectional view obtained by cutting along the dashed line EE in the figure;

[0060] Figure 8 for Figure 1A Another structural diagram of the backlight panel;

[0061] Figure 9A for Figure 8 A partially enlarged view of the first light-emitting chip and the light control structure in the image;

[0062] Figure 9B For along Figure 9A A partial schematic diagram of a top-view structure obtained by reversing the direction of C;

[0063] Figure 9C For along Figure 9A A sectional view obtained by cutting along the dashed line FF in the diagram;

[0064] Figure 9D For along Figure 9B A sectional view obtained by cutting along the dashed line II in the figure;

[0065] Figure 10A for Figure 8 Another enlarged view of the first light-emitting chip and the light control structure in the image;

[0066] Figure 10B For along Figure 10A A sectional view obtained by cutting along the dashed line GG in the figure;

[0067] Figure 11A This is a partial structural diagram of a backlight module provided in an embodiment of this application;

[0068] Figure 11B For along Figure 11A A sectional view obtained by cutting along the dashed line JJ in the diagram;

[0069] Figure 11C For along Figure 11A Another sectional view obtained by cutting along the dashed line JJ in the diagram;

[0070] Figure 12 This is a partial structural schematic diagram of another backlight module provided in an embodiment of this application;

[0071] Figure 13A This is a partial structural schematic diagram of another backlight module provided in an embodiment of this application;

[0072] Figure 13B This is a partial structural schematic diagram of another backlight module provided in an embodiment of this application;

[0073] Figure 14A A schematic diagram illustrating the light-emitting effect of a backlight module provided in an embodiment of this application;

[0074] Figure 14B A schematic diagram illustrating the light-emitting effect of a single first light-emitting chip in a backlight module provided in an embodiment of this application;

[0075] Figure 14C A wavelength versus light energy curve of a backlight module provided in an embodiment of this application;

[0076] Figure 14D Another wavelength-to-light energy curve of the backlight module provided in the embodiments of this application;

[0077] Figure 15A This is a schematic diagram illustrating another light-emitting effect of the backlight module provided in an embodiment of this application;

[0078] Figure 15B This is a schematic diagram illustrating another light-emitting effect of a single first light-emitting chip in the backlight module provided in the embodiments of this application;

[0079] Figure 15C Another wavelength-to-light energy curve of the backlight module provided in the embodiments of this application;

[0080] Figure 16 For along Figure 2 A partial schematic diagram of another top view of the structure obtained from direction A;

[0081] Figure 17This is a schematic diagram of another circuit structure of the backlight module provided in the embodiments of this application;

[0082] Figure 18A For along Figure 2 A partial schematic diagram of another top view of the structure obtained from direction B;

[0083] Figure 18B For along Figure 16 A schematic diagram of the unfolded cross-sectional view obtained by cutting along the dashed line Q1-Q1 in the figure;

[0084] Figure 18C For along Figure 16 A schematic diagram of the unfolded cross-sectional view obtained by cutting along the dashed line Q2-Q2 in the figure;

[0085] Figure 19 This is a schematic diagram of another circuit structure of the backlight module provided in the embodiments of this application;

[0086] Figure 20 for Figure 8 Another enlarged view of the first light-emitting chip and the light control structure in the image;

[0087] Figure 21A This is a schematic diagram of the structure of a display panel provided in an embodiment of this application;

[0088] Figure 21B For along Figure 21A A sectional view obtained by cutting along the dashed line KK in the figure;

[0089] Figure 22 This is a schematic diagram of the structure of a light strip provided in an embodiment of this application.

[0090] Figure label:

[0091] 01-Display terminal; 10-Liquid crystal display panel; 100-Cell substrate; 101-Array substrate; 102-Liquid crystal layer; 103-Upper polarizer; 104-Lower polarizer; 20-Backlight module; 201-Backlight board; 202-Diffuser plate; 203-Prism sheet; 204-Optical composite film; 110-Pixel circuit; 21-Circuit board; 05-Light-emitting chip; 22-First light-emitting chip; 23-Connector; 220-Substrate; 221_a-First... 221_b - Second light-emitting device; 2210 - PN junction; 2211 - First semiconductor doped layer; 2212 - Second semiconductor doped layer; 30 - First via; 31 - Second via; 222_a - Left first electrode pad; 222_b - Right first electrode pad; 223 - Second electrode pad; 2213 - Multiple quantum well layer; 2214 - Insulating planarization layer; 2215 - DBR; 32 - Electrode bridge lead; 221_c - ... Three light-emitting devices; 221_d - Fourth light-emitting device; 222_aa - Upper left first electrode pad; 222_bb - Lower left first electrode pad; 222_c - Upper right first electrode pad; 222_d - Lower right first electrode pad; 205 - Light control structure; 2051_a, 2051_b, 2051_c, 2051_d - Light control unit; 224 - Isolation groove; 40 - Shape of the first cross section; 401 - Straight line segment; 402 - First curved segment ; 403 - Second curved segment; 41 - Recessed structure; 42 - Shape of the second cross section; 206 - Reflective structure; 2060 - Reflective surface; 2061 - Support part; 2062 - Metal reflective sheet; 2063 - First reflective barrier; 2064 - Second reflective barrier; 501 - First sub-reflective area; 502 - Second sub-reflective area; 211 - First sub-circuit board; 212 - Second sub-circuit board; 02 - Display panel; 03 - Color conversion layer; 04 - Light strip. Detailed Implementation

[0092] The technical solutions of the embodiments of this application will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0093] In the following description, the terms "first," "second," etc., are used for descriptive convenience only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0094] Furthermore, in the embodiments of this application, directional terms such as "upper," "lower," "lateral," "longitudinal," "horizontal," and "vertical" may be defined relative to the orientation of the components shown in the accompanying drawings. It should be understood that these directional terms can be relative concepts, used for relative description and clarification, and may change accordingly depending on the orientation of the components in the accompanying drawings.

[0095] In this application, unless otherwise expressly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium. In addition, "electrical connection" can be a direct electrical connection or an indirect electrical connection achieved through an intermediate medium, and the electrically connected components can transmit electrical signals through wired or wireless means.

[0096] It should be noted that components in the accompanying drawings of this application are indicated by arrowed guide lines, and parts are indicated by wavy lines.

[0097] This application provides a display terminal with display functionality. The display terminal can be applied to various communication systems or protocols, such as Global System for Mobile Communications (GSM), Code Division Multiple Access (CDMA), Wideband Code Division Multiple Access (WCDMA), General Packet Radio Service (GPRS), and Long Term Evolution (LTE). The display terminal may include mobile phones, tablets, televisions, smart wearable products (e.g., smartwatches, smart bracelets), virtual reality (VR) terminal devices, and augmented reality (AR) terminal devices. This application does not impose any special limitations on the specific form of the aforementioned display terminal.

[0098] In some embodiments of this application, such as Figure 1AAs shown, the aforementioned display terminal 01 may include a liquid crystal display panel 10 and a backlight unit (BLU) 20. The liquid crystal display panel 10 has a display surface and a back surface disposed opposite to each other. The backlight unit 20 is disposed on the back surface of the liquid crystal display panel 10 and can be used to provide a backlight source to the liquid crystal display panel 10.

[0099] For example, LCD panel 10 Figure 1A As shown, the liquid crystal display panel 10 may include a cell substrate 100 and an array substrate 101 disposed opposite to each other, and the cell substrate 100 and the array substrate 101 are coupled to form a liquid crystal cell. When the cell substrate 100 includes a color filter layer, it can be referred to as a color filter substrate. The liquid crystal display panel 10 also has a liquid crystal layer 102 filled between the cell substrate 100 and the array substrate 101. The array substrate 101 is provided with an array of arranged elements, such as... Figure 1B The pixel circuit 110 is shown. Each pixel circuit 110 is located within a sub-pixel, and at least three sub-pixels that emit the three primary colors of light can constitute a pixel of the display terminal 01.

[0100] For example, the pixel circuit 110 described above may include a thin-film transistor (TFT). For instance, the gate (g) of the TFT is coupled to the gate line (GL), the source (s) of the TFT is coupled to the data line (DL), and the second electrode of the TFT is coupled to a liquid crystal capacitor Clc and a storage capacitor Cst. The liquid crystal capacitor Clc is mainly composed of liquid crystal molecules in the liquid crystal layer within the sub-pixel, pixel electrodes, and a common electrode. In this case, when the TFT is turned on, the data line DL transmits the data voltage Vdata to the liquid crystal capacitor Clc and the storage capacitor Cst, charging and discharging them. This changes the deflection angle of the liquid crystal molecules within the sub-pixel, thereby controlling the light transmittance of the light emitted from the backlight module 20 after passing through the liquid crystal display panel 10, achieving the purpose of controlling the display grayscale of the sub-pixel.

[0101] In addition, such as Figure 1A As shown, the aforementioned liquid crystal display panel 10 may further include an upper polarizer 103 and a lower polarizer 104 disposed opposite to each other, which may be disposed on both sides of the liquid crystal cell. The lower polarizer 104 serves as a polarizer, used to convert light from the backlight module 20 into polarized light. The upper polarizer 103 serves as an analyzer, used to analyze the polarized light modulated by the liquid crystal layer 102, enabling the liquid crystal display panel 10 to display images with contrast between light and dark areas.

[0102] Based on this, the aforementioned backlight module 20, as Figure 1A As shown, it may include a backlight panel 201 and a diffuser plate 202, a prism sheet 203, and an optical composite film 204 sequentially stacked on the backlight panel 201. In some embodiments of this application, the backlight panel 201 may include, for example, Figure 2 The circuit board 21 and multiple light-emitting chips 05 are shown. The light-emitting chips 05 are disposed on the circuit board 21. For example, any one of the multiple light-emitting chips 05 can be a micro (or mini) light-emitting diode (LED). The circuit board 21 can control the light-emitting chip 05 to emit light, thereby achieving electro-optical conversion. The size of a micro LED chip is typically less than 50 μm, while the size of a mini LED chip is typically between 50 μm and 200 μm.

[0103] also, Figure 1A The diffuser plate 202 shown is used to diffuse the light from the backlight panel 201 to make the light emitted by the backlight module 20 uniform. When the diffuser plate 202 includes quantum dot material, by adjusting the quantum dot material, the quantum dot material can emit light of a preset color when excited by a micro LED, thereby enabling the diffuser plate 202 to perform color conversion on the light from the backlight panel 201.

[0104] Furthermore, the prism sheet 203 can refract and totally reflect the light from the diffuser plate 202, so that the light can be emitted from the backlight module 20 to the liquid crystal display panel 10 at a certain angle. The optical composite film 204 may include multiple stacked optical film layers, such as anti-reflection film, quantum dot color conversion film, etc., and the optical composite film 204 can modulate the emitted light from the backlight module 20 according to the design requirements.

[0105] It should be noted that the backlight module 20 described above is an example of a direct-lit backlight module. In this direct-lit backlight module, the backlight lamp plate 201 is disposed on the side of the diffuser plate 202 away from the liquid crystal display panel 10. In some other embodiments of this application, the backlight module 20 may also be an edge-lit backlight module. In this case, the backlight module may further include a light guide plate, and the lamp plate may be disposed on the side of the light guide plate, transmitting light to the diffuser plate under the light guiding action of the light guide plate. This application does not impose any limitations on this. For ease of explanation, the following description uses the direct-lit backlight module as an example.

[0106] Therefore, in order to control the aforementioned liquid crystal display panel 10 and backlight module 20, the display terminal may further include a processor. The processor may be electrically connected to both the liquid crystal display panel 10 and the backlight module 20. The processor can control the light output brightness of the backlight module 20 and can also perform zoned brightness control of the backlight module 20 to achieve local dimming. Furthermore, the processor can provide display data to the liquid crystal display panel 10 to drive the liquid crystal display panel 10 to display images based on the backlight provided by the backlight module 20.

[0107] For example, the processor described above may include one or more processing units, such as: an application processor (AP), a modem processor, a graphics processing unit (GPU), an image signal processor (ISP), a controller, a video codec, a digital signal processor (DSP), a baseband processor, and / or a neural network processing unit (NPU), etc. The different processing units may be independent devices or integrated into one or more processors.

[0108] In addition, the aforementioned display terminal 01 may also include an external memory interface electrically connected to the processor, an internal memory, a universal serial bus (USB) interface, a charging management module, a power management module, a battery, an antenna, a mobile communication module, a wireless communication module, an audio module, a speaker, a receiver, a microphone, a headphone jack, a sensor module, buttons, and a camera, etc. The sensor module may include pressure sensors, gyroscope sensors, barometric pressure sensors, magnetic sensors, accelerometers, distance sensors, proximity sensors, fingerprint sensors, temperature sensors, touch sensors, ambient light sensors, and bone conduction sensors, etc.

[0109] The specific structure of the backlight module 20 described above will be illustrated in detail below. As can be seen from the above, the backlight module 20 provided in this application embodiment may include, for example: Figure 2The circuit board 21 shown includes multiple light-emitting chips 05 disposed on the circuit board 21 and a connector 23. Specifically, the circuit board 21 can be a rigid printed circuit board (PCB), a flexible printed circuit board (FPCB), or a silicon substrate. The circuit board 21 is provided with a driving circuit (not shown) for driving each light-emitting chip 05 to emit light. The connector 23 can be electrically connected to devices such as a front-end driving power supply and a processor, thereby allowing the front-end driving power supply to supply power to each light-emitting chip 05 through the connector 23, and allowing the processor to provide control signals to each light-emitting chip 05 through the connector 23.

[0110] Furthermore, the aforementioned plurality of light-emitting chips 05 may include a first light-emitting chip 22, such as Figure 3A (along Figure 2 As shown in the top view of the first light-emitting chip 22 obtained from direction A, the first light-emitting chip 22 may include a substrate 220 and S light-emitting devices, such as a first light-emitting device 221_a and a second light-emitting device 221_b. Where S ≥ 2, and S is a positive integer. Figure 3A The light-emitting device is indicated by a dashed line, indicating that it is located below the substrate 220. The structure of the first light-emitting chip 22 is illustrated in detail below using different examples.

[0111] Example 1

[0112] In this example, as Figure 3A As shown, the number of light-emitting devices in each first light-emitting chip 22 is S=2, that is, the first light-emitting chip 22 may include a first light-emitting device 221_a and a second light-emitting device 221_b.

[0113] In some embodiments of this application, such as Figure 3B (along Figure 3A As shown in the cross-sectional view obtained by cutting and unfolding the curve CC in the figure, the substrate 220 may have a carrier panel Sf1 and a light-emitting surface Sf2 arranged opposite to each other. The carrier surface Sf1 is closer to the circuit board 21, and the light-emitting surface Sf2 is farther from the circuit board 21. The side of the substrate 220 where the light-emitting surface Sf2 is located is the light-emitting side of the first light-emitting chip 22, i.e., the light-emitting device, for example, the light emitted by the second light-emitting device 221_b. Figure 3B (As indicated by the arrow in the image) light is emitted from the Sf2 side of the light-emitting surface of the substrate 220. For example, the preparation method of the substrate 220 may include using a crystal growth process to prepare a sapphire (aluminum oxide (Al2O3)) crystal pillar. The crystal pillar is then sliced ​​and polished to obtain the aforementioned substrate 220.

[0114] Based on this, S (e.g., S=2) light-emitting devices can be spaced apart on the bearing surface Sf1 of the substrate 220. These light-emitting devices, such as the second light-emitting device 221_b, are as follows: Figure 3B As shown, it may include a first semiconductor doped layer 2211 and a second semiconductor doped layer 2212 stacked together, and a multiple quantum well (MQW) 2213 located between the second semiconductor doped layer 2212 and the first semiconductor doped layer 2211.

[0115] The first semiconductor doped layer 2211 can be formed by p-type doping of a pure semiconductor material, such as by doping with a divalent element. Therefore, the first semiconductor doped layer 2211 can be a p-type semiconductor doped layer. In the formed first semiconductor doped layer 2211, free holes are the majority carriers and free electrons are the minority carriers. The pure semiconductor material can be GaN, and the divalent element can be magnesium (Mg). In this way, the first semiconductor doped layer 2211 mainly conducts electricity through holes. The higher the concentration of the doped element during the p-type doping process, the higher the concentration of majority carriers (holes), and the stronger the conductivity of the first semiconductor doped layer 2211.

[0116] The above description illustrates the P-type doping process using the example of doping a divalent element into a pure semiconductor material. This application does not limit the element used for P-type doping, as long as it ensures that the first semiconductor doped layer 2211 contains majority holes and minority free electrons, provided the performance of the light-emitting device meets the requirements.

[0117] Furthermore, the second semiconductor doped layer 2212 can be formed by N-type doping of a pure semiconductor material (i.e., an intrinsic semiconductor material), such as by doping with a tetravalent element. Therefore, the second semiconductor doped layer 2212 can be an N-type semiconductor doped layer. In the formed second semiconductor doped layer 2212, free electrons are majority carriers and holes are minority carriers. The pure semiconductor material can be gallium nitride (GaN), and the tetravalent element can be silicon (Si). In this way, the second semiconductor doped layer 2212 mainly conducts electricity through free electrons. The higher the concentration of the doped element during the N-type doping process, the higher the concentration of majority carriers (free electrons), and the stronger the conductivity of the second semiconductor doped layer 2212.

[0118] Similarly, the above description of the N-type doping process uses the example of doping a tetravalent element in a pure semiconductor material. This application does not limit the element used for N-type doping, as long as it ensures that the free electrons in the second semiconductor doped layer 2212 are majority carriers and the holes are minority carriers, provided that the performance of the light-emitting device meets the requirements.

[0119] It should be noted that the above description uses the example of the first semiconductor doped layer 2211 being a P-type semiconductor doped layer and the second semiconductor doped layer 2212 being an N-type semiconductor doped layer. In other embodiments of this application, the first semiconductor doped layer 2211 can be an N-type semiconductor doped layer and the second semiconductor doped layer 2212 can be a P-type semiconductor doped layer. For ease of explanation, the following embodiments of this application use the example of the first semiconductor doped layer 2211 being an N-type semiconductor doped layer and the second semiconductor doped layer 2212 being a P-type semiconductor doped layer.

[0120] Furthermore, the material of the aforementioned multiple quantum well layer 2213 may include gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium indium phosphorus (AlGaInP), or aluminum gallium indium arsenide (AlGaInAs), etc.

[0121] Based on this, such as Figure 3B As shown, in some embodiments of this application, a PN junction 2210 can be formed between the stacked first semiconductor doped layer 2211 and the second semiconductor doped layer 2212. In other embodiments of this application, an intrinsic semiconductor layer, i.e., a type I layer, can also be sandwiched between the first semiconductor doped layer 2211 and the second semiconductor doped layer 2212 of the PN junction 2210. This PN junction can also be referred to as a functional unit (cell) of a light-emitting device. A multiple quantum well layer 2213 is located in the active region of the PN junction 2210. By applying a voltage to the first semiconductor doped layer 2211 and the second semiconductor doped layer 2212, the multiple quantum well layer 2213 can be excited to emit light, thereby causing the light-emitting device to emit light.

[0122] In some embodiments of this application, a light-emitting device may include at least one PN junction 2210. Figure 3A This example illustrates the use of a first light-emitting device 221_a comprising a PN junction 2210 and a second light-emitting device 221_b comprising a PN junction 2210. Furthermore, in the backlight module 20 provided in this embodiment, such as... Figure 4 As shown, in a single first light-emitting chip 22, the PN junction of the first light-emitting device 221_a and the PN junction of the second light-emitting device 221_b can be connected in parallel (P). Since in this example, the first light-emitting chip 22 has two light-emitting devices, such as the first light-emitting device 221_a and the second light-emitting device 221_b, it has two parallel PN junctions. Therefore, for ease of explanation, the following... Figure 4 The scheme shown can be simply referred to as the 2P scheme.

[0123] It should be noted that, as Figure 4As shown, in a single first light-emitting chip 22, the N-type semiconductor doped layer of the PN junction of the first light-emitting device 221_a and the N-type semiconductor doped layer of the PN junction of the second light-emitting device 221_b (e.g., the aforementioned second semiconductor doped layer 2212) can both receive a common voltage Vcom, realizing a common electrode for multiple light-emitting devices. Furthermore, in a single first light-emitting chip 22, the P-type semiconductor doped layer of the PN junction of the first light-emitting device 221_a and the P-type semiconductor doped layer of the PN junction of the second light-emitting device 221_b (e.g., the aforementioned first semiconductor doped layer 2211) can receive different voltages.

[0124] Alternatively, in some other embodiments of this application, in a single first light-emitting chip 22, the P-type semiconductor doped layer of the PN junction of the first light-emitting device 221_a and the P-type semiconductor doped layer of the PN junction of the second light-emitting device 221_b (e.g., the first semiconductor doped layer 2211 mentioned above) can both receive a common voltage Vcom, thereby realizing a common electrode for multiple light-emitting devices.

[0125] Furthermore, in a single first light-emitting chip 22, the N-type semiconductor doped layer of the PN junction of the first light-emitting device 221_a and the N-type semiconductor doped layer of the PN junction of the second light-emitting device 221_b (e.g., the aforementioned second semiconductor doped layer 2212) can receive different voltages. For ease of explanation, the following embodiments in this example are all illustrated by the fact that the N-type semiconductor doped layer of the PN junction (e.g., the aforementioned second semiconductor doped layer 2212) receives a common voltage Vcom, while the P-type semiconductor doped layer of the PN junction (e.g., the aforementioned first semiconductor doped layer 2211) receives different voltages.

[0126] Based on this, in order to connect the PN junction of the first light-emitting device 221_a and the PN junction 2210 of the second light-emitting device 221_b in a single first light-emitting chip 22, as follows: Figure 5A (along Figure 2 As shown in the bottom view of the first light-emitting chip 22 obtained from direction B in the figure), the first light-emitting chip 22 may further include S first electrode pads. Figure 5A Taking S=2 as an example, the two first electrode pads are the left first electrode pad 222_a and the right first electrode pad 222_b, and the second electrode pad 223. The S first electrode pads are disposed on the side of the light-emitting device close to the circuit board and are electrically connected to the circuit board.

[0127] also, Figure 5A The S (e.g., S=2) first electrode pads shown, for example, the left first electrode pad 222_a and the right first electrode pad 222_b are also respectively connected to... Figure 3AThe S (e.g., S=2) light-emitting devices shown, for example, the PN junction of the first light-emitting device 221_a and the first end of the second light-emitting device 221_b are electrically connected one-to-one, that is, each first electrode pad is electrically connected to the first end of a light-emitting device.

[0128] For example, such as Figure 5B (along Figure 3A As shown in the cross-sectional view obtained by cutting and unfolding the curve OO in the figure, the left first electrode pad 222_a is disposed on the side of the first light-emitting device 221_a near the circuit board 21, and the left first electrode pad 222_a is electrically connected to the first end of the first light-emitting device 221_a and the circuit board 21. Furthermore, the right first electrode pad 222_b is disposed on the side of the second light-emitting device 221_b near the circuit board 21, and the right first electrode pad 222_b is electrically connected to the first end of the second light-emitting device 221_b and the circuit board 21. Based on this, the first light-emitting chip 22 can be electrically connected to the circuit board 21 using the aforementioned left first electrode pad 222_a and right first electrode pad 222_b, employing processes such as solder balls and bonding.

[0129] In addition, such as Figure 5B As shown, the aforementioned light-emitting device further includes an insulating planarization layer 2214 and a first via 30 penetrating the insulating planarization layer 2214. Each first electrode pad, such as the left first electrode pad 222_a, can be electrically connected to a first semiconductor doped layer 2211 in a PN junction 2210 through the first via 30. For example, if the first semiconductor doped layer 2211 is a P-type semiconductor doped layer, the first electrode pad can be referred to as a P-Pad.

[0130] As can be seen from the above, Figure 3A The first light-emitting chip 22 shown includes two light-emitting devices, for example, a first light-emitting device 221_a and a second light-emitting device 221_b. Each light-emitting device has a PN junction 2210. For example, the first light-emitting device 221_a has a PN junction 2210, and the second light-emitting device 221_b also has a PN junction 2210.

[0131] Therefore, the first light-emitting chip 22, as Figure 5B The diagram may include two first electrode pads, namely a left first electrode pad 222_a and a right first electrode pad 222_b. Each first electrode pad is electrically connected to a first semiconductor doped layer 2211 of a light-emitting device. That is, in each light-emitting device, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the light-emitting device and is electrically connected to a first electrode pad.

[0132] For example, in the first light-emitting device 221_a, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the first light-emitting device 221_a and is electrically connected to the left first electrode pad 222_a. Similarly, in the second light-emitting device 221_b, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the second light-emitting device 221_b and is electrically connected to the right first electrode pad 222_b.

[0133] Based on this, when the first light-emitting chip 22 can be flip-chip mounted on the circuit board 21 using a flip-chip process, the circuit board 21 can supply power to the first semiconductor doped layer 2211 of the light-emitting device electrically connected to each first electrode pad through different first electrode pads, such as the left first electrode pad 222_a and the right first electrode pad 222_b.

[0134] In addition, such as Figure 5B As shown, the second electrode pad 223 is disposed on the side of the light-emitting device near the circuit board 21 and is electrically connected to the circuit board 21. For example, the first light-emitting chip 22 can be electrically connected to the circuit board 21 via the second electrode pad 223 using processes such as solder balls or bonding. Furthermore, the second electrode pad 223 can be electrically connected to S (e.g., S=2) different light-emitting devices, for example, the second ends of both the first light-emitting device 221_a and the second light-emitting device 221_b.

[0135] For example, such as Figure 5B As shown, the above-mentioned light-emitting device also includes a second via 31 penetrating the insulating planarization layer 2214. The second electrode pad 223 can be electrically connected to the second semiconductor doped layer 2212 in any PN junction 2210 through different second vias 31. For example, when the second semiconductor doped layer 2212 is an N-type semiconductor doped layer, the second electrode pad 223 can be referred to as an N-Pad.

[0136] Based on this, in the first light-emitting chip 22, such as Figure 5B As shown, the device may include two light-emitting devices (e.g., a first light-emitting device 221_a and a second light-emitting device 221_b), and each light-emitting device has a PN junction 2210. In this case, the second electrode pad 223 can be electrically connected to the second semiconductor doped layer 2212 of the first light-emitting device 221_a and the second semiconductor doped layer 2212 of the second light-emitting device 221_b. That is, in each light-emitting device, the second semiconductor doped layer 2212 of the PN junction 2210 is electrically connected to the second electrode pad.

[0137] For example, in the first light-emitting device 221_a, the second semiconductor doped layer 2212 of the PN junction 2210 is electrically connected to the second electrode pad 223 as the second end of the first light-emitting device 221_a. Furthermore, in the second light-emitting device 221_b, the second semiconductor doped layer 2212 of the PN junction 2210 is electrically connected to the second electrode pad 223 as the second end of the second light-emitting device 221_b.

[0138] In this way, the second semiconductor doped layers 2212 of each light-emitting device (e.g., the first light-emitting device 221_a and the second light-emitting device 221_b) in the first light-emitting chip 22 can be electrically connected through a second electrode pad 223 to achieve a common electrode. Based on this, when the first light-emitting chip 22 can be flip-chip mounted on the circuit board 21, the circuit board 21 can supply power to the second semiconductor doped layers 2212 of all light-emitting devices electrically connected to the second electrode pad 223 through the second electrode pad 223.

[0139] In this case, when the driving circuit in circuit board 21 provides voltage to S (e.g., S=2) first electrode pads (e.g., left first electrode pad 222_a and right first electrode pad 222_b) and a second electrode pad 223, an external electric field can be formed on each light-emitting device (e.g., first light-emitting device 221_a and second light-emitting device 221_b) in the first light-emitting chip 22. The magnitude of the external electric field can control the magnitude of the current flowing through each light-emitting device, thereby controlling the number of photons excited in the multi-quantum well layer 2213 of each light-emitting device, thus achieving the purpose of controlling the light emission brightness of each light-emitting device in the first light-emitting chip 22.

[0140] In summary, such as Figure 2 As shown, in the backlight module 20 provided in this application, a plurality of light-emitting chips 05 are disposed on the circuit board 21. The plurality of light-emitting chips 05 may include, for example... Figure 3A The first light-emitting chip 22 is shown. This first light-emitting chip 22 may include multiple light-emitting devices, such as a first light-emitting device 221_a and a second light-emitting device 221_b. In a single first light-emitting chip 22, there are S (e.g., S=2) PN junctions 2210 of different light-emitting devices (e.g., ... Figure 3B The second semiconductor doped layer 2212 (as shown) serves as the second end of each of the above-mentioned light-emitting devices, and is electrically connected to the circuit board 21 through a second electrode pad, so that the PN junction 2210 of different light-emitting devices achieves common electrode.

[0141] Furthermore, the first semiconductor doped layer 2211 of the PN junction 2210 of S (e.g., S=2) different light-emitting devices serves as the first end of each of the aforementioned light-emitting devices, and is electrically connected to the circuit board 21 through S first electrode pads, thereby enabling the PN junction 2210 of different light-emitting devices to be controlled independently.

[0142] In this case, a common voltage can be provided to the second electrode pads, and the voltage applied to each of the first electrode pads (e.g., the left first electrode pad 222_a and the right first electrode pad 222_b) can be controlled individually. This allows for individual control of the driving current flowing through each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b), ultimately enabling individual control of the luminous brightness of the S (e.g., S=2) light-emitting devices in the first light-emitting chip 22.

[0143] Based on this, a single first light-emitting chip 22 can have S (e.g., S=2) light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b) whose brightness can be individually controlled. Each light-emitting device (e.g., first light-emitting device 221_a or second light-emitting device 221_b) can provide an independently controllable light-emitting control area for the first light-emitting chip 22, thereby making the single first light-emitting chip 22 have S (e.g., S=2) partitions.

[0144] Based on this, in the first light-emitting chip 22 having S (e.g., S=2) light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b), each light-emitting device having a PN junction 2210, and the S (e.g., S=2) PN junctions 2210 connected in parallel, in order to control the luminous brightness of each light-emitting device individually, the PN junction 2210 of each light-emitting device is electrically connected to a first electrode pad, and the PN junctions 2210 of the S (e.g., S=2) light-emitting devices are all electrically connected to a second electrode pad 223. Therefore, the first light-emitting chip 22 needs to be provided with S+1 (e.g., S=2, S+1=3) pads (2 first electrode pads and one second electrode pad 223) to electrically connect the first light-emitting chip 22 to the circuit board 21.

[0145] It should be noted that, Figure 5AThis example illustrates the arrangement of three electrode pads, namely two first electrode pads (e.g., left first electrode pad 222_a and right first electrode pad 222_b) and one second electrode pad 223, in a row. It does not constitute a limitation on the arrangement of the S+1 (e.g., S=2, S+1=3) electrode pads of the first light-emitting chip 22. This application does not limit the arrangement of the S+1 electrode pads of the first light-emitting chip 22; the arrangement can be based on the arrangement of the electrode traces connected to the first electrode pads and one second electrode pad 223 in the circuit board 21.

[0146] In this way, while keeping the number of backlight module 20 zones unchanged, the number of first light-emitting chips 22 can be reduced, thereby achieving the goal of reducing costs. For example, in the first light-emitting chip 22, such as Figure 3A In the case where the first light-emitting chip 22 has two light-emitting devices (e.g., a first light-emitting device 221_a and a second light-emitting device 221_b) and each light-emitting device has a PN junction 2210, the two PN junctions 2210 in the first light-emitting chip 22 are connected in parallel.

[0147] At this time, when the preset number of partitions of the backlight module 20 is 64, the backlight module 20 provided in this embodiment only needs to set 32 ​​(4×8, 4 arranged horizontally and 8 arranged vertically) first light-emitting chips 22. Since each first light-emitting chip 22 has 2 light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b), that is, each first light-emitting chip 22 has 2 partitions, 32 first light-emitting chips 22 can provide 64 (2×32) partitions.

[0148] However, in related technologies, each light-emitting chip has a PN junction, which results in each chip having a separate partition. Therefore, backlight modules in related technologies require 64 light-emitting chips. Thus, the backlight module 20 provided in this application can reduce the number of light-emitting chips 22 while maintaining the number of backlight partitions, thereby reducing costs.

[0149] On the other hand, with the number of first light-emitting chips 22 in the backlight module 20 remaining unchanged, the backlight module 20 provided in this application embodiment can obtain more partitions. For example, in the first light-emitting chip 22, such as Figure 3AThe diagram shows two light-emitting devices (e.g., a first light-emitting device 221_a and a second light-emitting device 221_b), each with a PN junction 2210. In this case, the two PN junctions 2210 in the first light-emitting chip 22 are connected in parallel. When the preset number of first light-emitting chips 22 in the backlight module 20 is 49 (7×7, 7 arranged horizontally and 7 arranged vertically), the backlight module 20 provided in this embodiment can have 98 (2×49) partitions.

[0150] However, in related technologies, each light-emitting chip has a PN junction, resulting in one partition per chip. Therefore, backlight modules in related technologies, even with 49 light-emitting chips, only have 49 partitions. Thus, the backlight module 20 provided in this application embodiment can achieve more partitions while maintaining the same number of light-emitting chips 22, which is beneficial for improving the HDR of the display terminal.

[0151] In addition, such as Figure 3B As shown, the light emitted by the light-emitting device, such as the second light-emitting device 221_b, is... Figure 3A (As indicated by the arrow in the image) light emitted from the Sf2 side of the substrate 220. The aforementioned light-emitting device may further include a distributed brag reflection (DBR) 2215. This DBR 2215 can reflect the light emitted from the multi-quantum-well layer 2213, so that the light emitted from the multi-quantum-well layer 2213 is emitted from the Sf2 side of the substrate 220. Furthermore, the aforementioned light-emitting device may also include a semiconductor nucleation layer, an ohmic contact layer, etc., which are not limited in this application.

[0152] The above example illustrates the structure of the first light-emitting chip 22, assuming it has S (e.g., S=2) light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b), each with a PN junction 2210, and the S (e.g., S=2) PN junctions 2210 belonging to different light-emitting devices are connected in parallel. In the backlight module 20 provided in this example, when using the above 2P scheme, the brightness of the two light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b) in each first light-emitting chip 22 can be adjusted independently, allowing each first light-emitting chip 22 to have two independently controlled zones. This reduces the number of first light-emitting chips 22 while maintaining the same number of zones in the backlight module 20, thus lowering costs. Alternatively, it allows for more zones while maintaining the same number of first light-emitting chips 22, improving the HDR of the display terminal.

[0153] In other embodiments of this application, such as Figure 6As shown, the number of light-emitting devices in a single first light-emitting chip 22 is S=2, and the PN junctions of different light-emitting devices in a single first light-emitting chip 22 are connected in parallel. For example, a single first light-emitting chip 22 includes a first light-emitting device 221_a and a second light-emitting device 221_b, and the PN junction in the first light-emitting device 221_a is connected in parallel with the PN junction in the second light-emitting device 221_b.

[0154] Furthermore, each light-emitting device has M PN junctions arranged sequentially and connected in series (S). For example, the first light-emitting device 221_a includes a first PN junction 2110_a and a second PN junction 2110_b connected in series, and the second light-emitting device 221_b includes a first PN junction 2110_a and a second PN junction 2110_b connected in series. M ≥ 2, where M is a positive integer. For ease of explanation, the following example uses M = 2. Based on this, as... Figure 6 The scheme shown can be simply referred to as the 2P2S scheme.

[0155] It should be noted that, as Figure 6 As shown, in a single first light-emitting chip 22, the N-type semiconductor doped layer of the second PN junction 2210_b of the first light-emitting device 221_a and the N-type semiconductor doped layer of the second PN junction 2210_b of the second light-emitting device 221_b (e.g., the aforementioned second semiconductor doped layer 2212) can both receive a common voltage Vcom, thereby realizing the common electrode of multiple light-emitting devices.

[0156] Furthermore, in a single first light-emitting chip 22, the P-type semiconductor doped layer of the first PN junction 2210_a of the first light-emitting device 221_a and the P-type semiconductor doped layer (e.g., the first semiconductor doped layer 2211 mentioned above) of the first PN junction 2210_a of the second light-emitting device 221_b can receive different voltages. In order to connect the first PN junction 2210_a and the second PN junction 2210_b in the same light-emitting device, the N-type semiconductor doped layer (e.g., the second semiconductor doped layer 2212 mentioned above) of the first PN junction 2210_a of the first light-emitting device 221_a (or the second light-emitting device 221_b) is electrically connected to the P-type semiconductor doped layer (e.g., the first semiconductor doped layer 2211 mentioned above) of the second PN junction 2210_b of the second light-emitting device 221_b (or the first light-emitting device 221_a).

[0157] Alternatively, in some other embodiments of this application, in a single first light-emitting chip 22, where the N-type semiconductor doped layers (e.g., the aforementioned second semiconductor doped layer 2212) of each first PN junction 2210_a receive different voltages, and the P-type semiconductor doped layers (e.g., the aforementioned first semiconductor doped layer 2211) of the second PN junction 2210_b all receive a common voltage Vcom, in order to connect the first PN junction 2210_a and the second PN junction 2210_b in series, the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the first PN junction 2210_a and the N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of the second PN junction 2210_b are electrically connected. The following embodiments in this example are all based on... Figure 6 The structure shown is used as an example for explanation.

[0158] Wherein, any PN junction in the first light-emitting device 221_a (or the second light-emitting device 221_b), such as the first PN junction 2110_a or the second PN junction 2110_b, is used. Figure 7A (along Figure 2 As shown in the top view of the first light-emitting chip 22 obtained from direction A, it may include a first semiconductor doped layer 2211 and a second semiconductor doped layer 2212 stacked together. For example, the first semiconductor doped layer 2211 may be a P-type semiconductor doped layer, and the second semiconductor doped layer 2212 may be an N-type semiconductor doped layer.

[0159] Furthermore, in this embodiment, the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 are connected in parallel. Since the first light-emitting chip 22 may include S (e.g., S=2) light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b), as described above, ... Figure 5A As shown, the first light-emitting chip 22 may also include S (e.g., S=2) first electrode pads (e.g., left first electrode pad 222_a and right first electrode pad 222_b) and a second electrode pad 223.

[0160] Based on this, in order to connect the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 in parallel, such as Figure 7B (along Figure 7AAs shown in the cross-sectional view obtained by cutting and unfolding the curve DD in the figure, in each light-emitting device (e.g., the first light-emitting device 221_a), among the M (e.g., M=2) sequentially arranged PN junctions (e.g., the first PN junction 2110_a and the second PN junction 2110_b), the first semiconductor doped layer 2211 of the first PN junction 2110_a serves as the first end of the light-emitting device (e.g., the first light-emitting device 221_a), and can be electrically connected to the left first electrode pad 222_a through the first via 30.

[0161] Similarly, in the second light-emitting device 221_b, where the first PN junction 2110_a and the second PN junction 2110_b are arranged sequentially, the first semiconductor doped layer 2211 of the first PN junction 2110_a serves as the first end of the second light-emitting device 221_b and can be electrically connected to a right first electrode pad 222_b through the first via 30. For example, if the first semiconductor doped layer 2211 is a P-type semiconductor doped layer, the first electrode pad can be referred to as a P-Pad.

[0162] Therefore, in the first light-emitting chip 22, the first PN junctions 2110_a of the S (e.g., S=2) different light-emitting devices can be electrically connected to each of the S (e.g., S=2) first electrode pads. In this way, when the first light-emitting chip 22 can be flip-chip mounted on the circuit board 21 using a flip-chip process, the circuit board 21 can supply power to the first semiconductor doped layer 2211 of the first PN junction 2110_a in each light-emitting device electrically connected to the first electrode pad through the different first electrode pads.

[0163] Furthermore, in the first light-emitting device 221_a, such as Figure 7C (along Figure 7A As shown in the cross-sectional view obtained by cutting and unfolding the curve EE in the figure, the second semiconductor doped layer 2212 of the second PN junction 2110_b serves as a light-emitting device, such as the second end of the first light-emitting device 221_a, and is electrically connected to the second electrode pad 223 through the second via 31. Similarly, in the second light-emitting device 221_b, the second semiconductor doped layer 2212 of the second PN junction 2110_b serves as the second end of the second light-emitting device 221_b, and can also be electrically connected to the second electrode pad 223 through another second via 31. For example, when the second semiconductor doped layer 2212 is an N-type semiconductor doped layer, the second electrode pad 223 can be referred to as an N-Pad.

[0164] Since the first light-emitting chip 22 has S (e.g., S=2) light-emitting devices (e.g., first light-emitting device 221_a and second light-emitting device 221_b), a second electrode pad 223 can be electrically connected to the second semiconductor doped layer 2212 of the S second PN junctions 2110_b to achieve a common electrode. Based on this, when the first light-emitting chip 22 can be flip-chip mounted on the circuit board 21, the circuit board 21 can supply power to the second semiconductor doped layer 2212 of the Mth (e.g., M=2)th second PN junction 2110_b among all the light-emitting devices electrically connected to the second electrode pad 223 via the second electrode pad 223.

[0165] Furthermore, in order to connect two adjacent PN junctions in each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b) in series, for example, the first PN junction 2110_a and the second PN junction 2110_b are connected in series, in other embodiments, in the first light-emitting device 221_a (or the second light-emitting device 221_b), such as Figure 7B As shown, the second semiconductor doped layer 2212 of the first PN junction 2110_a in two adjacent PN junctions can be electrically connected to the first semiconductor doped layer 2211 of the second PN junction 2110_b through the electrode bridge lead 32.

[0166] In this case, the example provided is as follows Figure 6 In the 2P2S scheme shown, on the one hand, the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 are connected in parallel. When the driving circuit in the circuit board 21 provides voltage to S (e.g., S=2) first electrode pads (e.g., left first electrode pad 222_a and right first electrode pad 222_b) and a second electrode pad 223, the current flowing through each light-emitting device can be controlled respectively to control the light-emitting brightness of each light-emitting device in the first light-emitting chip 22, so as to achieve the purpose of having S (e.g., S=2) partitions in a single first light-emitting chip 22.

[0167] This allows for a reduction in the number of first light-emitting chips 22 while maintaining the same number of zones in the backlight module 20, thus lowering costs. Alternatively, it allows for a greater number of zones while maintaining the same number of first light-emitting chips 22, thereby improving the HDR performance of the display terminal.

[0168] On the other hand, M (e.g., M=2) PN junctions in each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b), such as the first PN junction 2110_a and the second PN junction 2110_b connected in series, can increase the driving voltage of each light-emitting device. For example, when the driving voltage of one PN junction is 3V, the driving voltage of a light-emitting device with M (e.g., M=2) PN junctions connected in series can be 6V (2×3V). In this case, as... Figure 7A As shown, when the first light-emitting chip 22 includes two of the above-mentioned light-emitting devices (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b), the driving voltage of the first light-emitting chip 22 can reach 6V (2×3V).

[0169] In this way, when the driving voltage of the front-end driving power supply electrically connected to the first light-emitting chip 22 is 6V, the first light-emitting chip 22 can be matched with the driving voltage of the aforementioned front-end driving power supply. This eliminates the need for an additional boost circuit between the first light-emitting chip 22 and the aforementioned front-end driving power supply, thus simplifying the circuit structure and reducing costs. For example, the value range of the PN junction M connected in series in each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b) can be 2 ≤ M ≤ 8. When M = 8, the first light-emitting chip 22 can be matched with the driving voltage of the front-end driving power supply electrically connected to it, which is 24V (8 × 3V). For example, the value of M can also be 3, 4, 5, 6, or 7.

[0170] Furthermore, by providing at least two PN junctions connected in series in the light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b), the driving voltage of the entire first light-emitting chip 22 can be increased. Based on this, when the driving power of the first light-emitting chip 22 remains constant, by increasing the driving voltage of the entire first light-emitting chip 22, the current flowing through the first light-emitting chip 22 can be reduced, thereby correspondingly reducing the size of the circuit board 21, simplifying the structural size of the backlight module 20, and facilitating the realization of ultra-thin display terminal 01.

[0171] In summary, such as Figure 4 The 2P scheme shown and as Figure 6 The similarity of the 2P2S schemes shown is that the PN junctions of different light-emitting devices (e.g., first light-emitting device 221_a or second light-emitting device 221_b) in the first light-emitting chip 22 are connected in parallel. The difference is that, as... Figure 4 In the 2P scheme shown, each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b) has only one PN junction 2210. For example... Figure 6In the 2P2S scheme shown, each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b) has two PN junctions connected in series, namely the first PN junction 2210_a and the second PN junction 2210_b.

[0172] Based on this, such as Figure 4 The 2P scheme shown, and as Figure 6 For any of the 2P2S schemes shown, in order to further improve the energy and light distribution uniformity of the light emitted by each light-emitting device (e.g., the first light-emitting device 221_a or the second light-emitting device 221_b) in the first light-emitting chip 22, the backlight module 20 also includes multiple such... Figure 8 The light control structure 205 shown is shown.

[0173] Continue as Figure 8 As shown, the light control structure 205 can be disposed on the light-emitting side of the first light-emitting chip 22. A light control structure cover 205 is disposed on one first light-emitting chip 22. Specifically, in some embodiments of this application, such as... Figure 9A As shown, the light control structure 205 may include S (S is an even number, for example, S=2) interconnected light control units, such as interconnected light control units 2051_a and 2051_b. Each light control unit is covered by a light-emitting device, for example, as shown in the figure. Figure 9B As shown, the light control unit 2051_a on the left illuminates the first light-emitting device 221_a on the left, and the light control unit 2051_b on the right illuminates the second light-emitting device 221_b on the left.

[0174] In addition, such as Figure 9A As shown, the surfaces of the light control units 2051_a and 2051_b away from the light-emitting device are curved. These curved surfaces are used to change the transmission direction of the light, enabling the light control units to emit the received light along a preset direction. This preset direction can be a direction away from the connection point of S (e.g., S=2) light control units, and the preset directions of the light emitted by two adjacent light control units 2051 are different.

[0175] In the case where the first light-emitting chip 22 includes two light-emitting devices, such as the first light-emitting device 221_a and the second light-emitting device 211_b described above, as follows: Figure 9A As shown, the first light-emitting chip 22 also includes an isolation trench 224, the bottom of which is located on the bearing surface Sf1 of the substrate 220. The isolation trench 224 is disposed between two adjacent light-emitting devices, such as the first light-emitting device 221_a and the second light-emitting device 221_b.

[0176] Based on this, the isolation groove 224 is used to isolate different light-emitting devices, such as Figure 3BThe first semiconductor doped layer 2211, the second semiconductor doped layer 2212, and the multiple quantum well layer 2213 shown are spaced apart. The connection point between the light control unit 2051_a and the light control unit 2051_b in the light control structure 205 can cover the aforementioned isolation trench 224. Therefore, the aforementioned preset direction can be a direction away from the connection point between the light control unit 2051_a and the light control unit 2051_b, that is, a direction away from the isolation trench 224.

[0177] Based on this, such as Figure 9A As shown, the light emitted by two adjacent light-emitting devices in a single first light-emitting chip 22, such as the first light-emitting device 221_a and the second light-emitting device 221_b, can be incident on different light control sections in the same light control structure 205, such as light control section 2051_a and light control section 2051_b. Since the preset directions of the emitted light from the two adjacent light control sections 2051_a and 2051_b are different, and the preset direction can be a direction away from the isolation groove 224, this allows... Figure 9A In the diagram, the left-hand light control unit 2051_a directs the light emitted from the first light-emitting device 221_a away from the isolation groove 224, causing most of the light emitted by the light control unit 2051 to exit to the right. Similarly, the right-hand light control unit 2051_b directs the light emitted from the second light-emitting device 221_b away from the isolation groove 224, causing most of the light emitted by the light control unit 2051 to exit to the right.

[0178] Furthermore, since the brightness of the first light-emitting device 221_a and the second light-emitting device 221_b in the same first light-emitting chip 22 can be controlled independently to achieve two different zones, the crosstalk between the light-emitting areas of the first light-emitting device 221_a and the second light-emitting device 221_b can be reduced by setting the aforementioned light control structure 205, thereby enhancing the light energy of a single zone. Based on this, when one of the light-emitting devices in the first light-emitting chip 22, such as the first light-emitting device 221_a, is turned off and the other second light-emitting device 221_b is turned on, the area where the first light-emitting device 221_a is located can be significantly darkened, which is beneficial for improving the HDR of the display terminal.

[0179] The following provides a detailed example illustrating the specific structure of the optical control unit in the optical control structure 205. For example... Figure 9C (along Figure 9A As shown in the cross-sectional view obtained by cutting along the dashed line FF in the figure, either the light control unit 2051_a or the light control unit 2051_b may have a first cross-section. This first cross-section is perpendicular to the bearing surface Sf1 of the substrate 220 and perpendicular to the extending direction X of the isolation trench 224 (as shown in the figure). Figure 9A The first cross section 40, as shown, intersects (e.g., perpendicularly). The edge of the first cross section 40 away from the light-emitting device may include a straight segment 401 and a first curved segment 402.

[0180] In this configuration, the straight segment 401 is inclined, and the distance H1 between the end of the straight segment 401 closest to the isolation trench 224 and the bearing surface Sf1 of the substrate 220 is less than the distance H2 between the end of the straight segment 401 furthest from the isolation trench 224 and the bearing surface Sf1, i.e., H1 < H2. In this case, the portion of the light control structure 205 where the two light control units 2051_a and 2051_b are connected is formed as follows: Figure 9A The recessed structure 41 shown.

[0181] Based on this, such as Figure 9C As shown, the portion of the second light-emitting device 221_b located on the right side near the isolation groove 224 emits light (indicated by solid arrows in the attached diagram) that will mostly illuminate the curved surface where the straight line segment 401 of the light control unit 2051_b covering the second light-emitting device 221_b is located, i.e., the aforementioned recessed structure 41 (as shown in the attached diagram). Figure 9A The portion located in the light control unit 2051_b (as shown) can emit light from the second self-emitting device 221_b and deflect most of the light to the right in a direction away from the isolation groove 224.

[0182] Similarly, most of the light emitted by the portion of the first light-emitting device 221_a located on the left side near the isolation groove 224 will illuminate the curved surface where the straight line segment 401 of the light control part 2051_a covering the first light-emitting device 221_a is located, i.e., the aforementioned recessed structure 41 (as shown in the image). Figure 9A The portion located in the light control unit 2051_a (as shown) can emit light from the first light-emitting device 221_a and deflect most of the light to the left in a direction away from the isolation groove 224.

[0183] In addition, such as Figure 9C As shown, the first curved segment 402 is located at the end of the straight segment 401 away from the isolation groove 224 and is connected to the straight segment 401. Along the direction away from the isolation groove 224, the distance from each point on the first curved segment 402 to the bearing surface Sf1 gradually decreases. Based on this, most of the light emitted by the portion of the second light-emitting device 221_b located on the right side away from the isolation groove 224 (indicated by solid arrows in the attached diagram) will illuminate the curved surface where the first curved segment 402 is located in the light control unit 2051_b covering the second light-emitting device 221_b. Figure 9AThe portion of the light control unit 2051_b shown, excluding the recessed structure 41, can emit light from the second light-emitting device 221_b and deflect most of the light to the right in a direction away from the isolation groove 224.

[0184] Similarly, most of the light emitted by the portion of the first light-emitting device 221_a located on the left side away from the isolation groove 224 will illuminate the curved surface where the first curved segment 402 of the light control unit 2051_a covering the first light-emitting device 221_b is located. Figure 9A The portion of the light control unit 2051_a shown, excluding the recessed structure 41, can emit light from the first light-emitting device 221_a and deflect most of the light to the left in a direction away from the isolation groove 224.

[0185] In this way, the light control structure 205 can emit light from different light-emitting devices in a single first light-emitting chip 22, such as the first light-emitting device 221_a and the second light-emitting device 221_b, in different directions, reducing the probability of crosstalk between the light emitted by the two light-emitting devices.

[0186] The above is as follows Figure 9A In the light control structure 205 shown, the light control unit 2051_a or the light control unit 2051_b is as follows: Figure 9C The shape 40 of the first cross section shown, with the side away from the light-emitting device including a straight segment 401 and a first curved segment 402, is used as an example to illustrate the light control structure 205.

[0187] In other embodiments of this application, the light control structure 205 is as follows: Figure 10A As shown, it also includes S (e.g., S=2) light control units, such as light control unit 2051_a and light control unit 2051_b. Furthermore, unlike the light control structure 205 provided in the aforementioned embodiment, as... Figure 10B As shown, the shape 40 of the first cross section of either light control unit 2051_a or light control unit 2051_b includes a second curved segment 403 on the side away from the light-emitting device.

[0188] Along the direction away from the isolation groove 224, the distance from each point on the second curved segment 403 to the bearing surface Sf1 gradually increases. The light control unit 2051_a or the light control unit 2051_b is used to perform total internal reflection of the received light through the curved surface where their respective second curved segments 403 are located. The light control unit is also used to emit the total internally reflected light from the side surface away from the isolation groove 224.

[0189] Specifically, such as Figure 10BAs shown, the light emitted by the second light-emitting device 221_b located on the right side illuminates the curved surface of the light control unit 2051_b covering the second light-emitting device 221_b, where the second curved segment 403 is located. This curved surface can perform total internal reflection of the light from the second light-emitting device 221_b. The totally reflected light will exit from the side of the light control unit 2051_b away from the isolation groove 224, thereby enabling the light control unit 2051_b to preset the direction of the light from the light-emitting device 221_b, that is, to exit to the right in a direction away from the isolation groove 224.

[0190] Similarly, such as Figure 10B As shown, the light emitted by the first light-emitting device 221_a located on the left illuminates the curved surface of the light control unit 2051_a covering the first light-emitting device 221_a, where the second curved segment 403 is located. This curved surface can perform total internal reflection of the light from the first light-emitting device 221_a. The totally reflected light will exit from the side of the light control unit 2051_a away from the isolation groove 224, thereby enabling the light control unit 2051_a to preset the direction of the light from the light-emitting device 221_a, that is, to emit it to the left in a direction away from the isolation groove 224. Similarly, the light control structure 205 can emit light from different light-emitting devices in a single first light-emitting chip 22, such as the first light-emitting device 221_a and the second light-emitting device 221_b, in different directions, reducing the probability of crosstalk between the light emitted by the two light-emitting devices.

[0191] The above is merely an example of the light control structure 205 and does not constitute a structural limitation on the light control structure 205. Other examples will not be elaborated here, as long as it can at least ensure that the light control unit in the light control structure 205 can emit the light emitted by the light-emitting device covered by the light control unit in a preset direction. For ease of explanation, the following embodiments all use the light control structure 205 as described above. Figure 9A The structure shown is used as an example for illustration.

[0192] Based on this, such as Figure 9B As shown, when the first light-emitting chip 22 includes S (e.g., S=2) light-emitting devices, such as the first light-emitting device 221_a and the second light-emitting device 221_b, in some embodiments of this application, the vertical projection of the first light-emitting chip 22 on the substrate bearing surface Sf1 can be a first rectangle, the first rectangle having a first long side L1 along the first direction Y1 and a first short side L2 along the second direction Y2.

[0193] Wherein, the first direction Y1 can be the same as the extension direction X of the isolation groove 224 (e.g., Figure 9A As shown, it is perpendicular to and parallel to the bearing surface Sf1, and the second direction Y2 can be perpendicular to the extension direction X of the isolation groove 224 (as shown). Figure 9A(as shown) is parallel to and parallel to the bearing surface Sf1.

[0194] Furthermore, the ratio of the first long side L1 to the first short side L2 can be L1:L2 ≥ 1.5:1. In this case, the aforementioned first rectangle can be a long strip. Since the first light-emitting chip 22 includes two light-emitting devices, such as the first light-emitting device 221_a and the second light-emitting device 221_b, the vertical projection of any one of the light-emitting devices 221_a and 221_b onto the substrate's bearing surface Sf1 can be approximately a square. Based on this, as... Figure 9D (along Figure 9B As shown in the cross-sectional view obtained by cutting along the dashed line II in the figure, along the second direction Y2, the distance L0 between the two ends of the light-emitting device and the center O of the light-emitting device, such as the second light-emitting device 221_b, is approximately equal.

[0195] Based on this, such as Figure 9D As shown, the light control section 2051, which is disposed on the light-emitting device, such as the second light-emitting device 221_b, may have a second cross section. This second cross section is perpendicular to the bearing surface Sf1 of the substrate 220 and perpendicular to the first direction Y1 (e.g., ...). Figure 9A As shown), that is, parallel to the second direction Y2. The shape of the second cross section 42 includes arc segments on the side away from the light-emitting device.

[0196] In this way, the distances from the light emitted by various points of the light-emitting device, such as the second light-emitting device 221_b, to the aforementioned arc segment can be approximately equal. For example, the distance R1 from the light emitted from a position of the light-emitting device, such as the second light-emitting device 221_b, to the arc segment is equal to the distance R2 from the light emitted from the edge of the light-emitting device, such as the second light-emitting device 221_b, to the arc segment, i.e., R1 = R2. Based on this, the light received by the light control unit 2051 can be made uniform, thereby improving the uniformity of the light emitted by the light control unit 2051, and further improving the uniformity of the light emitted from each zone of the first light-emitting chip 22.

[0197] It should be noted that the above description is an example of the structure of the shape 42 of the second cross-section of the light control unit 2051, where the edge away from the light-emitting device may include an arc segment, and the distances from the light emitted from each point of the first light-emitting device 221_a or the second light-emitting device 221_b to the aforementioned arc segment are approximately equal. In other embodiments of this application, the edge away from the light-emitting device of the shape 42 of the second cross-section of the light control unit 2051 may also be a curve with different curvatures at various points, thereby making the distances from the light emitted from each point of the first light-emitting device 221_a and the second light-emitting device 221_b to the aforementioned arc segment different. This application does not limit this aspect.

[0198] Furthermore, for example, the aforementioned light control structure 205 can be fabricated using a transparent resin material, such as encapsulating silicone. For instance, a molding process can be used to first fabricate multiple control structures 205. Then, an adhesive layer is formed on the circuit board 21. Next, the multiple control structures 205 are respectively deposited onto each first light-emitting chip 22 and bonded to the circuit board 21 using surface mounted technology (SMT). Alternatively, a transparent silicone layer can be formed directly on the circuit board 21 with multiple first light-emitting chips 22 using a spray or brush adhesive process, and then multiple control structures 205 can be formed in one step using a lamination process, with each control structure 205 depositing one first light-emitting chip 22.

[0199] Furthermore, in order to improve the light energy and uniformity of the light emitted from each zone of the first light-emitting chip 22, in some embodiments of this application, the backlight module 20 may further include multiple such... Figure 11A The reflective structure 206 is shown. A reflective structure 206 is disposed on the circuit board 21 and surrounds at least a portion of a first light-emitting chip 22. Figure 11A This example illustrates the concept of the reflective structure 206 surrounding the first light-emitting chip 22.

[0200] Based on this, such as Figure 11B (along Figure 11A As shown in the cross-sectional view obtained by cutting along the dashed line JJ, the reflective structure 206 has a reflective surface 2060, which is used to reflect the light emitted from the first light-emitting chip 22. For example, the surface of the reflective structure 206 facing the first light-emitting chip 22 can be the aforementioned reflective surface 2060. In this way, when the light emitted by the light-emitting device in the first light-emitting chip 22 is incident on the reflective surface 2060 of the reflective structure 206, the reflective surface 2060 can reflect the incident light, thereby increasing the light energy and uniformity of the light emitted from the first light-emitting chip 22.

[0201] For example, the reflective structure 206 may have a direction perpendicular to the circuit board 21 and perpendicular to the extension direction X of the isolation groove 224 (e.g., Figure 10A The third section (as shown) Figure 11B As shown, the shape of the third cross section can be triangular, with the base of the triangle located on the side where the circuit board 21 is located. In this way, the opening size of the reflective structure 206 away from the circuit board 21 can be larger than the opening size of the reflective structure 206 close to the circuit board 21, making the reflective structure 206 funnel-shaped, which is beneficial for light emission.

[0202] In some embodiments of this application, the material constituting the reflective structure 206 may include a metallic material. For example, at least one selected from Al (aluminum), Ag (silver), Pt (platinum), Au (gold), Cu (copper), Ti (titanium), and Cr (chromium). When the material of the reflective structure 206 is Ag, the reflective structure 206 may be referred to as a silver reflective structure. Alternatively, in other embodiments of this application, the material constituting the reflective structure 206 may include a white resin material, such as polycarbonate (PC), and the reflective structure 206 may be referred to as a white reflective structure.

[0203] Alternatively, in some other embodiments of this application, such as Figure 11C (along Figure 11A As shown in the cross-sectional view obtained by cutting along the dashed line JJ, the reflective structure 206 may include a support portion 2061 and a metal reflective sheet 2062. The support portion 2061 may be disposed on the circuit board 21. The metal reflective sheet 2062 may cover the surface of the support portion 2061. For example, the material constituting the support portion 2061 may be a resin material, and the material constituting the metal reflective sheet 2062 may be the aforementioned metal material with high reflectivity.

[0204] In this way, by wrapping the surface of the support portion 2061 with a metal reflector 2062, the outer surface of the metal reflector 2062 can serve as the reflecting surface 2060 of the aforementioned reflective structure 206, reflecting the incident light. Since a portion of the reflective structure 206 is made of metal, it is beneficial to reduce production costs.

[0205] The above example illustrates the reflective structure 206 by describing it as being disposed around the periphery of the first light-emitting chip 22. In other embodiments of this application, the reflective structure 206 may include, for example... Figure 12 The first reflective barrier 2063 and multiple second reflective barriers 2064 are shown.

[0206] Specifically, a first reflective barrier 2063 is arranged around the first light-emitting chip 22 to form a reflective area 50. At least one second reflective barrier 2064 is located within the reflective area 50. Figure 12The distance description is based on an example of a reflective structure 206 including two second reflective barriers 2064. One end of the second reflective barrier 2064 is connected to the first reflective barrier 2063, and the other end of the second reflective barrier 2064 extends towards two adjacent light-emitting devices in the first light-emitting chip 22, for example, between the first light-emitting device 221_a and the second light-emitting device 221_b. For example, the other end of the second reflective barrier 2064 may extend towards the isolation groove 224 between two adjacent light-emitting devices, for example, between the first light-emitting device 221_a and the second light-emitting device 221_b. For example, the other end of the second reflective barrier 2064 may be in contact with the aforementioned light control structure 205, or there may be a gap between them.

[0207] In this configuration, the second reflective barrier 2064 can be used to divide the reflective area 50 into multiple sub-reflective areas, such as a first sub-reflective area 501 and a second sub-reflective area 502. Each light-emitting device is located in one sub-reflective area; for example, the first light-emitting device 221_a is located in the first sub-reflective area 501, and the second light-emitting device 221_b is located in the second sub-reflective area 502. The reflective surface of the reflective structure 206 may include the surface of the first reflective barrier 2063 near the first light-emitting chip 22 and the second reflective barrier 2064 near the sub-reflective areas, such as the surfaces of the first sub-reflective area 501 and the second reflective area 502.

[0208] Based on this, in the first light-emitting chip 22, the light emitted by the first light-emitting device 221_a located on the left side can be reflected into the first sub-reflective area 501 by the reflective surface formed by the first reflective barrier 2063 and the second reflective barrier 2064. Similarly, the light emitted by the second light-emitting device 221_b located on the right side can be reflected into the second sub-reflective area 502 by the reflective surface formed by the first reflective barrier 2063 and the second reflective barrier 2064.

[0209] In this way, the light energy and uniformity of the first light-emitting device 221_a and the second light-emitting device 221_b can be increased respectively, so that the light emitted by the first light-emitting device 221_a and the second light-emitting device 221_b located in different partitions in a single first light-emitting chip 22 can all correspond to the position of the 1-peak Gaussian light distribution, that is, the light emitted by the first light-emitting device 221_a and the second light-emitting device 221_b can all satisfy the characteristic of bright in the middle and dark at the edge.

[0210] Based on this, in some embodiments of this application, such as Figure 13AAs shown, multiple first light-emitting chips 22 can be arrayed on a circuit board 21, which can be a single, continuous circuit board. Alternatively, in some embodiments of this application, as described above, while maintaining the same number of partitions in the backlight module 20, the number of first light-emitting chips 22 can be reduced, thus increasing the spacing between adjacent first light-emitting chips 22. In this case, some of the circuit boards between adjacent first light-emitting chips 22 can be removed to reduce costs.

[0211] Specifically, such as Figure 13B As shown, circuit board 21 may include at least one first sub-circuit board 211 and a plurality of second sub-circuit boards 212. Both the first sub-circuit board 211 and the second sub-circuit board 212 may be strip-shaped. Furthermore, the first sub-circuit board 211 and the second sub-circuit board 212 are arranged intersectingly. The long side of the first sub-circuit board 211 may be arranged along a first direction Y1, and the long side of the second sub-circuit board 212 may be arranged along a second direction Y2. One end of the second sub-circuit board 212 is connected to one end of the first sub-circuit board 211, and there is a gap H3 between adjacent second sub-circuit boards 212.

[0212] In this case, a portion of the plurality of first light-emitting chips 22 can be disposed on the first sub-circuit board 211, and another portion can be disposed on the second sub-circuit board 212. Furthermore, the plurality of first light-emitting chips 22 can be disposed on, for example... Figure 13B The light emitted by the backlight module 20 is evenly distributed on the circuit board 21 shown, so that the light emitted by the backlight module 20 can be uniform.

[0213] Furthermore, the circuit board 21, composed of the first sub-circuit board 211 and multiple second sub-circuit boards 212, is not a complete circuit board. The circuit board 21 has a cutout area, specifically the area containing the gap H3 between two adjacent second sub-circuit boards 212. This reduces the amount of board material used in manufacturing the circuit board, thus lowering costs.

[0214] It should be noted that this application does not limit the number of first light-emitting chips 22 arranged in the backlight module 20 along the first direction Y1 and the second direction Y2.

[0215] In summary, in this example, the number of light-emitting devices in each first light-emitting chip 22 is S=2. For example, the first light-emitting chip 22 includes a first light-emitting device 221_a and a second light-emitting device 221_b. In some embodiments of this application, such as Figure 3A As shown, each light-emitting device, for example, the first light-emitting device 221_a or the second light-emitting device 221_b, has a PN junction 2210. Alternatively, in some other embodiments of this application, such as... Figure 7AAs shown, any one of the light-emitting devices of the first light-emitting chip 22 has two connected first PN junctions 2210_a and second PN junctions 2210_b to increase the driving voltage of the light-emitting device.

[0216] In this case, for any of the above-mentioned first light-emitting chips 22, the two light-emitting devices of a single first light-emitting chip 22, for example, the first light-emitting device 221_a and the second light-emitting device 221_b, are connected in parallel so that the brightness of the two light-emitting devices in a single first light-emitting chip 22, for example, the first light-emitting device 221_a and the second light-emitting device 221_b, can be controlled independently, thereby making the single first light-emitting chip 22 have two zones with independently controllable brightness.

[0217] The following is based on... Figure 3A As shown, the number of light-emitting devices in each first light-emitting chip 22 is S=2, and each light-emitting device, for example, the first light-emitting device 221_a and the second light-emitting device 221_b, has a PN junction 2210. Taking this example, the light-emitting effect of the backlight module 20 is explained.

[0218] As can be seen from the above, on the one hand, with the number of first light-emitting chips 22 in the backlight module 20 remaining unchanged, the backlight module 20 provided in this application embodiment can obtain more partitions. For example, when the preset number of first light-emitting chips 22 in the backlight module 20 is 49 (7×7), the backlight module 20 provided in this application embodiment can have 98 (2×49) partitions. The size of each first light-emitting chip 22 can be 280μm×650μm, that is, the first light-emitting chip 22 along... Figure 13B The dimension of the second direction Y2 shown is 280 μm, and the dimension of the first direction Y1 is 650 μm.

[0219] Based on this, the simulation diagram of the light mixing effect of the backlight module 20 with 98 zones is as follows: Figure 14A As shown in the diagram, the bright areas represent the regions where multiple first light-emitting chips emit light in the backlight module, while the darker areas represent the non-light-emitting areas between adjacent first light-emitting chips. Testing revealed that the backlight module's brightness can reach approximately 90%, and its uniformity can reach approximately 90%.

[0220] In comparison, the backlight module of the related technology has only one PN junction per LED, so with a preset number of 49 LEDs, it has 49 zones. Each LED can be 200μm × 400μm in size. A simulation diagram of the backlight effect of a backlight module with 49 zones is shown below. Figure 15A As shown, the backlight module's brightness can reach about 90 and its uniformity can reach about 93% after testing.

[0221] Therefore, when the backlight module 20 provided in this application has the same number of first light-emitting chips as the backlight module in the related technology, the number of partitions of the backlight module 20 provided in this application can be doubled, while still having good light uniformity and brightness gain. The difference in light uniformity and brightness gain compared with the related technology can be controlled to about 3%.

[0222] Furthermore, the simulation diagram of the light-emitting effect of a single first light-emitting chip provided in the embodiments of this application is as follows: Figure 14B As shown in the figure, the bright areas represent the regions where a single first light-emitting chip emits light in the backlight module, while the darker areas represent the non-light-emitting areas between adjacent first light-emitting chips. Each first light-emitting chip has two zones (represented by white dashed lines), with one of the aforementioned light-emitting devices disposed within each zone, and the first light-emitting chip exhibits good light uniformity. In comparison, simulation diagrams of the light-emitting effect of a single light-emitting chip in related technologies are shown below. Figure 15B As shown, only one zone of the light-emitting chip emits light (represented by the white dashed line).

[0223] On the other hand, the shape of the single first light-emitting chip 22 provided in the embodiments of this application is as follows: Figure 13A The image shows a long strip shape. Based on this, the wavelength versus light energy curve obtained along the direction of the short side of the first light-emitting chip 22, i.e., the second direction Y2, is shown in the figure. Figure 14C As shown in Figure 14C, the full width at half maximum (FWHM) of the first light-emitting chip 22 is approximately 17 mm.

[0224] In this case, along as Figure 13A In the second direction Y2 shown, the light mixing distance between two adjacent first light-emitting chips 22 in the backlight module 20 can reach 17mm. Furthermore, as... Figure 13A As shown, the wavelength versus light energy curve obtained along the direction of the long side of the first light-emitting chip 22, i.e., the first direction Y1, is as follows: Figure 14D As shown in Figure 14D, the full width at half maximum (FWHM) of the first light-emitting chip 22 is approximately 31 mm. Under these conditions, along... Figure 13A In the first direction Y1 shown, the light mixing distance between two adjacent first light-emitting chips 22 in the backlight module 20 can reach 31mm.

[0225] In comparison, the light-emitting chip provided by the related technology has a partition, the size of the light-emitting chip is approximately rectangular, and the wavelength-to-light energy curve of the light-emitting chip is as follows. Figure 15C As shown, the half-width at half-maximum (WHM) of the light-emitting chip 22 is approximately 19 mm. Therefore, the mixing distance between two adjacent light-emitting chips in the backlight module, whether in the horizontal or vertical direction, is 19 mm.

[0226] Thus, as can be seen from the above, in the backlight module provided in the embodiments of this application, such as Figure 13A In the first direction Y1 shown, the light mixing distance between two adjacent first light-emitting chips 22 in the backlight module 20 can reach 31mm, which is greater than the light mixing distance of 19mm in the related technology. Therefore, while keeping the number of partitions in the backlight module 20 unchanged, the number of first light-emitting chips 22 can be reduced to increase the spacing between two adjacent first light-emitting chips 22, effectively reducing production costs.

[0227] This example illustrates the structure of the backlight module 20 and the first light-emitting chip 22 using the example of S=2 light-emitting devices in the first light-emitting chip 22. Other settings for the number of light-emitting devices S are illustrated below.

[0228] Example 2

[0229] In this example, the number of light-emitting devices in each first light-emitting chip 22 is S = 4, and each first light-emitting chip 22 is as follows: Figure 16 (along Figure 2 The top view of the first light-emitting chip 22 obtained from direction A in the figure shows that it includes four light-emitting devices, such as the first light-emitting device 221_a, the second light-emitting device 221_b, the third light-emitting device 221_c, and the fourth light-emitting device 221_d.

[0230] Based on this, in some embodiments of this application, such as Figure 16 As shown, a light-emitting device, such as a first light-emitting device 221_a, a second light-emitting device 221_b, a third light-emitting device 221_c, or a fourth light-emitting device 221_d, may include at least one PN junction 2210. In this case, in a single first light-emitting chip 22, the four PN junctions 2210 belonging to different light-emitting devices are connected in parallel, i.e., as shown... Figure 17 As shown, a single first light-emitting chip 22 has four parallel light-emitting devices, such as the first light-emitting device 221_a, the second light-emitting device 221_b, the third light-emitting device 221_c, and the fourth light-emitting device 221_d. Therefore, the above scheme can be simply referred to as the 4P scheme. The structure of the PN junction 2210 is the same as described above and will not be repeated here.

[0231] Similarly, in order to connect the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 in parallel, as follows: Figure 18A (along Figure 2As shown in the bottom view of the first light-emitting chip 22 obtained from direction B in the figure, the first light-emitting chip 22 may also include S first electrode pads (for example, the upper left first electrode pad 222_aa, the lower left first electrode pad 222_bb, the upper right first electrode pad 222_c, and the lower right first electrode pad 222_d are spaced apart) and a second electrode pad 223.

[0232] Among them, the four first electrode pads, such as the upper left first electrode pad 222_aa, the lower left first electrode pad 222_bb, the upper right first electrode pad 222_c, and the lower right first electrode pad 222_d, are electrically connected to the first end of the four different light-emitting devices.

[0233] For example, the upper left first electrode pad 222_aa is electrically connected to the first end of the first light-emitting device 221_a, the lower left first electrode pad 222_bb is electrically connected to the first end of the second light-emitting device 221_b, the upper right first electrode pad 222_c is electrically connected to the first end of the third light-emitting device 221_c, and the lower right first electrode pad 222_d is electrically connected to the first end of the fourth light-emitting device 221_d.

[0234] Specifically, such as Figure 18B (along Figure 16 As shown in the cross-sectional view obtained by cutting along the dashed line Q1-Q1, the first semiconductor doped layer 2211 of the PN junction 2210 of the first light-emitting device 221_a is electrically connected to the upper left first electrode pad 222_aa as the first end of the first light-emitting device 221_a. The first semiconductor doped layer 2211 of the PN junction 2210 of the second light-emitting device 221_b is electrically connected to the lower left first electrode pad 222_bb as the first end of the second light-emitting device 221_b. The first semiconductor doped layer 2211 of the PN junction 2210 of the third light-emitting device 221_c is electrically connected to the upper right first electrode pad 222_c as the first end of the third light-emitting device 221_c. The first semiconductor doped layer 2211 of the PN junction 2210 of the fourth light-emitting device 221_d is electrically connected to the lower right first electrode pad 222_d as the first end of the fourth light-emitting device 221_d.

[0235] For example, when the first semiconductor doped layer 2211 is a P-type semiconductor doped layer, each of the aforementioned first electrode pads can be referred to as a P-Pad. Based on this, when the first light-emitting chip 22 is flip-chip mounted on the circuit board 21, the circuit board 21 can supply power to the first semiconductor doped layer 2211 of the light-emitting device electrically connected to each first electrode pad through different first electrode pads.

[0236] Furthermore, the second electrode pad 223 is electrically connected to the second ends of all four light-emitting devices. For example, the second electrode pad 223 can be electrically connected to the second ends of the first light-emitting device 221_a, the second light-emitting device 221_b, the third light-emitting device 221_c, and the fourth light-emitting device 221_d to achieve a common electrode.

[0237] Specifically, such as Figure 18C (along Figure 16 As shown in the cross-sectional view obtained by cutting along the dashed line Q2-Q2, the second semiconductor doped layer 2212 of the PN junction 2210 of the first light-emitting device 221_a is electrically connected to the second electrode pad 223 as the second end of the first light-emitting device 221_a. The second semiconductor doped layer 2212 of the PN junction 2210 of the second light-emitting device 221_b is electrically connected to the second electrode pad 223 as the second end of the second light-emitting device 221_b. The second semiconductor doped layer 2212 of the PN junction 2210 of the third light-emitting device 221_c is electrically connected to the second electrode pad 223 as the second end of the third light-emitting device 221_c. The second semiconductor doped layer 2212 of the PN junction 2210 of the fourth light-emitting device 221_d is electrically connected to the second electrode pad 223 as the second end of the fourth light-emitting device 221_d.

[0238] When the second semiconductor doped layer 2212 is an N-type semiconductor doped layer, the second electrode pad 223 can be referred to as an N-Pad. Based on this, when the first light-emitting chip 22 is flip-chip mounted on the circuit board 21, the circuit board 21 can supply power to the second semiconductor doped layer 2212 of all light-emitting devices electrically connected to the second electrode pad through the second electrode pad 223.

[0239] Similarly, when the driving circuit in circuit board 21 provides voltage to the four first electrode pads (e.g., the upper left first electrode pad 222_aa, the lower left first electrode pad 222_bb, the upper right first electrode pad 222_c, and the lower right first electrode pad 222_d) and a second electrode pad 223, the current flowing through each light-emitting device (first light-emitting device 221_a, second light-emitting device 221_b, third light-emitting device 221_c, and fourth light-emitting device 221_d) in the first light-emitting chip 22 can be controlled respectively, thereby controlling the brightness of each light-emitting device.

[0240] Based on this, each first light-emitting chip 22 has four light-emitting devices whose brightness can be individually controlled. Each light-emitting device can provide an independently controllable light-emitting control area for the first light-emitting chip 22, thus enabling each first light-emitting chip 22 to have four zones. This allows each first light-emitting chip 22 to have four independently controllable zones, thereby reducing the number of first light-emitting chips 22 while maintaining the same number of zones in the backlight module 20, thus lowering costs. Alternatively, while maintaining the same number of first light-emitting chips 22, more zones can be obtained to improve the HDR of the display terminal.

[0241] In other embodiments of this application, such as Figure 19 As shown, the number of light-emitting devices in each first light-emitting chip 22 is S=4, that is, each first light-emitting chip 22 includes a first light-emitting device 221_a, a second light-emitting device 221_b, a third light-emitting device 221_c, and a fourth light-emitting device 221_d. The PN junctions of different light-emitting devices in a single first light-emitting chip 22 are connected in parallel. In addition, each light-emitting device has M (e.g., M=2) PN junctions arranged sequentially and connected in series. For example, any one of the first light-emitting device 221_a, the second light-emitting device 221_b, the third light-emitting device 221_c, and the fourth light-emitting device 221_d has a first PN junction 2110_a and a second PN junction 2110_b. Based on this, this scheme can be simply referred to as the 4P2S scheme.

[0242] Similarly, in a single first light-emitting chip 22, the N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of the second PN junction 2210_b of the first light-emitting device 221_a can serve as the second end of the first light-emitting device 221_a and be electrically connected to the second electrode pad 223. The N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of the second PN junction 2210_b of the second light-emitting device 221_b can also serve as the second end of the second light-emitting device 221_b and be electrically connected to the aforementioned second electrode pad 223.

[0243] Furthermore, the N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of the second PN junction 2210_b of the third light-emitting device 221_c can serve as the second terminal of the third light-emitting device 221_c and be electrically connected to the aforementioned second electrode pad 223. Similarly, the N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of the second PN junction 2210_b of the fourth light-emitting device 221_d can serve as the second terminal of the fourth light-emitting device 221_d and be electrically connected to the aforementioned second electrode pad 223. This achieves a common electrode for multiple light-emitting devices.

[0244] Based on this, in a single first light-emitting chip 22, the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the first PN junction 2210_a of the first light-emitting device 221_a can be electrically connected to the upper left first electrode pad 222_aa as the first end of the first light-emitting device 221_a. Similarly, the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the first PN junction 2210_a of the second light-emitting device 221_b can be electrically connected to the lower left first electrode pad 222_bb as the first end of the second light-emitting device 221_b.

[0245] Furthermore, the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the first PN junction 2210_a of the third light-emitting device 221_c can be electrically connected to the upper right first electrode pad 222_c as the first end of the third light-emitting device 221_c. Similarly, the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the first PN junction 2210_a of the fourth light-emitting device 221_d can be electrically connected to the lower right first electrode pad 222_d as the first end of the fourth light-emitting device 221_d. This allows the first semiconductor doped layer 2211 of the first PN junction 2210_a of each light-emitting device in a single first light-emitting chip 22 to receive different voltages.

[0246] In addition, in order to connect the first PN junction 2210_a and the second PN junction 2210_b in the same light-emitting device in series, the N-type semiconductor doped layer of the first PN junction 2210_a (e.g., the second semiconductor doped layer 2212 mentioned above) is electrically connected to the P-type semiconductor doped layer of the second PN junction 2210_b (e.g., the first semiconductor doped layer 2211 mentioned above).

[0247] Alternatively, in a single first light-emitting chip 22, if the N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of each first PN junction 2210_a receives different voltages, and the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the second PN junction 2210_b all receives a common voltage, in order to connect the first PN junction 2210_a and the second PN junction 2210_b in the same light-emitting device in series, the P-type semiconductor doped layer (e.g., the aforementioned first semiconductor doped layer 2211) of the first PN junction 2210_a and the N-type semiconductor doped layer (e.g., the aforementioned second semiconductor doped layer 2212) of the second PN junction 2210_b are electrically connected.

[0248] Furthermore, in this embodiment, the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 are connected in parallel. Since the first light-emitting chip 22 may include four light-emitting devices, as described above, ... Figure 18AAs shown, the first light-emitting chip 22 may further include four first electrode pads (e.g., upper left first electrode pad 222_aa, lower left first electrode pad 222_bb, upper right first electrode pad 222_c, and lower right first electrode pad 222_d) and one second electrode pad 223 (e.g., upper left first electrode pad 222_aa, lower left first electrode pad 222_bb, upper right first electrode pad 222_c, and lower right first electrode pad 222_d spaced apart). The connection method between the second electrode pad 223 and the aforementioned plurality of light-emitting devices is as described above and will not be repeated here. Figure 19 The 4P2S scheme shown is similar to Figure 7A The beneficial effects of the 2P2S scheme shown are the same, and will not be repeated here.

[0249] Based on this, such as Figure 16 The 4P scheme shown, and as Figure 19 For any of the 4P2S schemes shown, in order to further improve the energy and light distribution uniformity of the light emitted by each light-emitting device in the first light-emitting chip 22, the backlight module 20 also includes multiple such... Figure 20 The light control structure 205 is shown. As mentioned above, this light control structure 205 can be prepared using a transparent resin material, and the preparation method is the same as described above, so it will not be repeated here.

[0250] Specifically, the light control structure 205 may include four (S is an even number, for example, S=4) interconnected light control units, such as light control units 2051_a, 2051_b, 2051_c, and 2051_d. Each light control unit is covered by a light-emitting device. For example, light control unit 2051_a illuminates the first light-emitting device 221_a; light control unit 2051_b illuminates the second light-emitting device 221_b; light control unit 2051_c illuminates the third light-emitting device 221_c; and light control unit 2051_d illuminates the fourth light-emitting device 221_d.

[0251] Similarly, the surface of any of the aforementioned light control units away from the light-emitting device is curved. This curved surface is used to change the transmission direction of light, enabling the light control unit to emit the received light along a preset direction. This preset direction is away from the connection point of the four light control units, and the preset directions of light emitted by adjacent light control units are different.

[0252] For example, the shape 40 of the first cross-section of any of the above-mentioned light control units is as follows: Figure 9C The side away from the light-emitting device shown includes a straight segment 401 and a first curved segment 402. Alternatively, as another example, the shape 40 of the first cross-section of any of the above-mentioned light control units is as follows: Figure 10BThe edge away from the light-emitting device includes a second curved segment 403. Along the direction away from the isolation groove 224, the distance from each point on the second curved segment 403 to the bearing surface Sf1 gradually increases. The beneficial effects of the shape 40 of the first cross-section of this light control unit are as described above, and will not be repeated here.

[0253] Based on this, such as Figure 16 As shown, when the first light-emitting chip 22 includes four light-emitting devices, such as the first light-emitting device 221_a, the second light-emitting device 221_b, the third light-emitting device 221_c, and the fourth light-emitting device 221_d, in some embodiments of this application, the vertical projection of the first light-emitting chip 22 onto the substrate bearing surface can be a second rectangle. The second rectangle has a second long side L3 along the first direction Y1 and a second short side L4 along the second direction Y2.

[0254] The ratio of the second longer side L3 to the second shorter side L4 is L3:L4 ≤ 1.2:1. Based on this, the second rectangle is approximately square. Since the first light-emitting chip 22 includes four light-emitting devices, the vertical projection of any one of the light-emitting devices onto the substrate's bearing surface Sf1 can be approximated as a square. In this case, as... Figure 9D As shown, along the second direction Y2, the distance L0 between the two ends of the light-emitting device and the center O of the light-emitting device is approximately equal.

[0255] Based on this, similarly, we can deduce that, Figure 9D As shown, the light control section 2051, which is disposed on the light-emitting device, may have a second cross-section. This second cross-section is perpendicular to the bearing surface Sf1 of the substrate 220 and perpendicular to the first direction Y1, i.e., parallel to the second direction Y2. The shape 42 of the second cross-section includes an arc segment on the side away from the light-emitting device. In this way, the distance from the light emitted from all parts of the light-emitting device to the arc segment can be approximately equal, thereby making the light received by the light control section 2051 uniform, which helps to improve the uniformity of the light emitted by the light control section 2051, and further improves the uniformity of the light emitted from each zone of the first light-emitting chip 22.

[0256] Furthermore, in some other embodiments of this application, the shape 42 of the second cross section of the light control unit 2051 away from the edge of the light-emitting device can also be a curve with different curvatures at different locations, so that the distance of the light emitted from different locations of the light-emitting device to the aforementioned arc segment is different. This application does not limit this.

[0257] Based on this, in order to improve the light energy and uniformity of the light emitted from each zone of the first light-emitting chip 22, it can be similarly concluded that the backlight module 20 may also include multiple such... Figure 11AThe reflective structure 206 is shown. A reflective structure 206 is disposed on the circuit board 21 and surrounds at least a portion of the periphery of a first light-emitting chip 22. The arrangement and beneficial effects of the reflective structure 206 are as described above and will not be repeated here.

[0258] Furthermore, in this example, circuit board 21 can be a single circuit board, or it can also be as follows: Figure 13B As shown, it includes at least one first sub-circuit board 211 and multiple second sub-circuit boards 212. The arrangement and beneficial effects of the circuit board 21 and the first light-emitting chip 22 on the circuit board are the same as described above, and will not be repeated here.

[0259] It should be noted that Example 1 uses an example where the number of light-emitting devices in the first light-emitting chip 22 is S=2, and Example 2 uses an example where the number of light-emitting devices in the first light-emitting chip 22 is S=4, to illustrate the structure of the backlight module 20 and the first light-emitting chip 22. The aforementioned S can also be other numbers; this application does not limit the number S of light-emitting devices in the first light-emitting chip 22.

[0260] Other embodiments of this application provide a display terminal. Furthermore, the display terminal includes a processor and a display panel electrically connected to the processor. The type of display terminal and the structure of the processor are the same as described above, and will not be repeated here. Additionally, as... Figure 21A The display panel 02 shown may include a circuit board 21 and a plurality of light-emitting chips, including a first light-emitting chip 22. As described above, the structure of the first light-emitting chip 22 may include, for example... Figure 3A The substrate 220, S light-emitting devices, and as shown are described. Figure 5A The S first electrode pads shown are (e.g., left first electrode pad 222_a and right first electrode pad 222_b) and the second electrode pad 223.

[0261] like Figure 3B As shown, the substrate 220 may have a carrier panel Sf1 and a light-emitting surface Sf2 disposed opposite to each other, and the side of the substrate 220 where the light-emitting surface Sf2 is located is the light-emitting side of the first light-emitting chip 22. S light-emitting devices, for example, such as... Figure 5B As shown, the first light-emitting device 221_a and the second light-emitting device 221_b can be disposed at intervals on the bearing surface Sf1 of the substrate 220. Each light-emitting device may include at least one PN junction 2210. For example, the first light-emitting device 221_a includes at least one PN junction 2210, and the second light-emitting device 221_b includes at least one PN junction 2210. The structure of the PN junction 2210 is as described above and will not be repeated here.

[0262] Furthermore, the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22, such as the first light-emitting device 221_a and the second light-emitting device 221_b, are connected in parallel. In this case, the S first electrode pads, for example, the left first electrode pad 222_a and the right first electrode pad 222_a, are as follows: Figure 5B The first electrode pads are positioned on the side of the light-emitting device closest to the circuit board 21 and are electrically connected to the circuit board 21. Furthermore, each of the S first electrode pads is electrically connected to the first end of one of the S different light-emitting devices. As described above, as... Figure 5B As shown, the left first electrode pad 222_a is disposed on the side of the first light-emitting device 221_a near the circuit board 21, and the left first electrode pad 222_a is electrically connected to the circuit board 21 and the first end of the first light-emitting device 221_a. The right first electrode pad 222_b is disposed on the side of the second light-emitting device 221_b near the circuit board 21, and the right first electrode pad 222_b is electrically connected to the circuit board 21 and the first end of the second light-emitting device 221_b.

[0263] Furthermore, the second electrode pad 223 is disposed on the side of the light-emitting device (e.g., the first light-emitting device 221_a and the second light-emitting device 221_b) near the circuit board 21 and is electrically connected to the circuit board 21. Moreover, the second electrode pad 223 is electrically connected to the second ends of S different light-emitting devices to achieve a common electrode, for example, the second electrode pad 223 is connected to the second ends of the first light-emitting device 221_a and the second ends of the second light-emitting device 221_b. This display panel 02 has the same beneficial effects as the backlight module 20 provided in the aforementioned embodiment, and will not be described again here.

[0264] Based on this, in some embodiments of this application, when a single first light-emitting chip 22 includes S light-emitting devices, one light-emitting device may include a PN junction 2210, that is, using... Figure 4 The 2P scheme shown, or as Figure 17 The 4P scheme is shown. Furthermore, the PN junction 2210 is as follows... Figure 3B As shown, it may include a first semiconductor doped layer 2211 and a second semiconductor doped layer 2212 stacked together. Based on this, in order to connect the multiple PN junctions 2210 in the first light-emitting chip 22 in parallel, in each light-emitting device (e.g., the first light-emitting device 221_a and the second light-emitting device 221_b), the first semiconductor doped layer 2211 of the PN junction 2210 is electrically connected to a first electrode pad, and the second semiconductor doped layer 2212 of the PN junction 2210 is electrically connected to a second electrode pad 223.

[0265] For example, in the first light-emitting device 221_a, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the first light-emitting device 221_a and is electrically connected to the left first electrode pad 222_a; the second semiconductor doped layer 2212 of the PN junction 2210 serves as the second end of the first light-emitting device 221_a and is electrically connected to the second electrode pad 223. Similarly, in the second light-emitting device 221_b, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the second light-emitting device 221_b and is electrically connected to the right first electrode pad 222_b; the second semiconductor doped layer 2212 of the PN junction 2210 serves as the second end of the second light-emitting device 221_b and is electrically connected to the second electrode pad 223. The beneficial effects of the 2P or 4P schemes are the same as described above and will not be repeated here.

[0266] Wherein, the first semiconductor doped layer 2211 is a P-type semiconductor doped layer, and the second semiconductor doped layer 2212 is an N-type semiconductor doped layer, or the first semiconductor doped layer 2211 is an N-type semiconductor doped layer and the second semiconductor doped layer 2212 is a P-type semiconductor doped layer.

[0267] Alternatively, in other embodiments of this application, where a single first light-emitting chip 22 includes S light-emitting devices, such as Figure 6 As shown, a light-emitting device may include M (e.g., M=2) sequentially arranged PN junctions, such as a first PN junction 2110_a and a second PN junction 2110_b. The M sequentially arranged PN junctions in each light-emitting device are connected in series, i.e., using a configuration such as... Figure 6 The 2P2S scheme shown, or the 2P4S scheme described above. The beneficial effects of the 2P2S scheme or the 2P4S scheme are the same as those described above, and will not be repeated here.

[0268] Based on this, in order to connect the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 in parallel, such as Figure 7B As shown, in each light-emitting device, among the M (e.g., M=2) sequentially arranged PN junctions, the first semiconductor doped layer 2211 of the first PN junction 2110_a serves as the first end of the light-emitting device and can be electrically connected to a first electrode pad through the first via 30. Furthermore, the second semiconductor doped layer 2212 of the second PN junction 2110_b serves as the second end of the light-emitting device and is electrically connected to the second electrode pad 223 through the second via 31 to achieve a common electrode configuration.

[0269] Furthermore, in order to connect two adjacent PN junctions in each light-emitting device in series, for example, the first PN junction 2110_a and the second PN junction 2110_b are connected in series, such as... Figure 7BAs shown, the second semiconductor doped layer 2212 of the first PN junction 2110_a in two adjacent PN junctions can be electrically connected to the first semiconductor doped layer 2211 of the second PN junction 2110_b through the electrode bridge lead 32.

[0270] Furthermore, in some embodiments of this application, the display panel 02 may also include the aforementioned plurality of components. Figure 8 The light control structure 205 shown and as follows Figure 11A The reflective structure 206 is shown. The specific arrangement and beneficial effects of the light control structure 205 and the reflective structure 206 are the same as described above, and will not be repeated here.

[0271] Additionally, in some embodiments of this application, such as Figure 21A As shown, the display panel 02 has multiple pixels (P). At least three first light-emitting chips 22 located within the same pixel can emit three primary colors of light respectively. For example, the three primary colors of light can be red (R), green (G), and blue (B). In this case, by adjusting the material of the multi-quantum well layer 2213 between the PN junctions 2210 in the first light-emitting chip 22, the first light-emitting chip 22 can emit the aforementioned red, green, or blue light. For example, when the multi-quantum well layer 2213 is made of gallium nitride (GaN) or indium gallium nitride (InGaN), it can emit blue or green light. When the multi-quantum well layer 2213 is made of aluminum gallium indium phosphide (AlGaInP) or aluminum gallium indium arsenide (AlGaInAs), it can emit red light.

[0272] Alternatively, in other embodiments of this application, any one of the first light-emitting chips 22 can be as follows: Figure 21B (along Figure 21A As shown in the cross-sectional view obtained by cutting along the dashed line KK in the image, it emits blue light, abbreviated as Bμ-LED. In this case, the aforementioned display panel 02 may further include a color conversion layer 03. This color conversion layer 03 may be located on the light-emitting side of the first light-emitting chip 22. The color conversion layer 03 can be used to convert the light emitted by at least three first light-emitting chips 22 located in the same pixel into the aforementioned three primary colors of light.

[0273] For example, the material of the aforementioned color conversion layer may include quantum dot materials or organic light-emitting materials. The materials of the color conversion layer 03 covering the three first light-emitting chips 22 in the same pixel may be different, so that different quantum dot color conversion materials can emit the aforementioned three primary colors of light respectively under the excitation of blue light emitted by different first light-emitting chips 22. The aforementioned display panel 02 is a self-emissive display panel.

[0274] Other embodiments of this application provide a light strip. This light strip can be applied in lighting equipment. For example... Figure 22 As shown, the light strip 04 may include a circuit board 21 and multiple light-emitting chips, including a first light-emitting chip 22. As described above, the structure of the first light-emitting chip 22 may include, for example... Figure 3A The substrate 220, S light-emitting devices, and as shown are described. Figure 5A The S first electrode pads shown are (e.g., left first electrode pad 222_a and right first electrode pad 222_b) and the second electrode pad 223.

[0275] like Figure 3B As shown, the substrate 220 may have a carrier panel Sf1 and a light-emitting surface Sf2 disposed opposite to each other, and the side of the substrate 220 where the light-emitting surface Sf2 is located is the light-emitting side of the first light-emitting chip 22. S light-emitting devices, for example, such as... Figure 5B As shown, the first light-emitting device 221_a and the second light-emitting device 221_b can be disposed at intervals on the bearing surface Sf1 of the substrate 220. Each light-emitting device may include at least one PN junction 2210. For example, the first light-emitting device 221_a includes at least one PN junction 2210, and the second light-emitting device 221_b includes at least one PN junction 2210. The structure of the PN junction 2210 is as described above and will not be repeated here.

[0276] Furthermore, the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22, such as the first light-emitting device 221_a and the second light-emitting device 221_b, are connected in parallel. In this case, the S first electrode pads, for example, the left first electrode pad 222_a and the right first electrode pad 222_a, are as follows: Figure 5B The first electrode pads are positioned on the side of the light-emitting device closest to the circuit board 21 and are electrically connected to the circuit board 21. Furthermore, each of the S first electrode pads is electrically connected to the first end of one of the S different light-emitting devices. As described above, as... Figure 5B As shown, the left first electrode pad 222_a is disposed on the side of the first light-emitting device 221_a near the circuit board 21, and the left first electrode pad 222_a is electrically connected to the circuit board 21 and the first end of the first light-emitting device 221_a. The right first electrode pad 222_b is disposed on the side of the second light-emitting device 221_b near the circuit board 21, and the right first electrode pad 222_b is electrically connected to the circuit board 21 and the first end of the second light-emitting device 221_b.

[0277] Furthermore, the second electrode pad 223 is disposed on the side of the light-emitting device (e.g., the first light-emitting device 221_a and the second light-emitting device 221_b) near the circuit board 21 and is electrically connected to the circuit board 21. Moreover, the second electrode pad 223 is electrically connected to the second ends of S different light-emitting devices to achieve a common electrode, for example, the second electrode pad 223 is connected to the second ends of the first light-emitting device 221_a and the second ends of the second light-emitting device 221_b. This display panel 02 has the same beneficial effects as the backlight module 20 provided in the aforementioned embodiment, and will not be described again here.

[0278] Based on this, in some embodiments of this application, when a single first light-emitting chip 22 includes S light-emitting devices, one light-emitting device may include a PN junction 2210, that is, using... Figure 4 The 2P scheme shown, or as Figure 17 The 4P scheme is shown. Furthermore, the PN junction 2210 is as follows... Figure 3B As shown, it may include a first semiconductor doped layer 2211 and a second semiconductor doped layer 2212 stacked together. Based on this, in order to connect the multiple PN junctions 2210 in the first light-emitting chip 22 in parallel, in each light-emitting device (e.g., the first light-emitting device 221_a and the second light-emitting device 221_b), the first semiconductor doped layer 2211 of the PN junction 2210 is electrically connected to a first electrode pad, and the second semiconductor doped layer 2212 of the PN junction 2210 is electrically connected to a second electrode pad 223.

[0279] For example, in the first light-emitting device 221_a, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the first light-emitting device 221_a and is electrically connected to the left first electrode pad 222_a; the second semiconductor doped layer 2212 of the PN junction 2210 serves as the second end of the first light-emitting device 221_a and is electrically connected to the second electrode pad 223. Similarly, in the second light-emitting device 221_b, the first semiconductor doped layer 2211 of the PN junction 2210 serves as the first end of the second light-emitting device 221_b and is electrically connected to the right first electrode pad 222_b; the second semiconductor doped layer 2212 of the PN junction 2210 serves as the second end of the second light-emitting device 221_b and is electrically connected to the second electrode pad 223. The beneficial effects of the 2P or 4P schemes are the same as described above and will not be repeated here.

[0280] Wherein, the first semiconductor doped layer 2211 is a P-type semiconductor doped layer, and the second semiconductor doped layer 2212 is an N-type semiconductor doped layer, or the first semiconductor doped layer 2211 is an N-type semiconductor doped layer and the second semiconductor doped layer 2212 is a P-type semiconductor doped layer.

[0281] Alternatively, in other embodiments of this application, where a single first light-emitting chip 22 includes S light-emitting devices, such as Figure 6 As shown, a light-emitting device may include M (e.g., M=2) sequentially arranged PN junctions, such as a first PN junction 2110_a and a second PN junction 2110_b. The M sequentially arranged PN junctions in each light-emitting device are connected in series, i.e., using a configuration such as... Figure 6 The 2P2S scheme shown, or the 2P4S scheme described above. The beneficial effects of the 2P2S scheme or the 2P4S scheme are the same as those described above, and will not be repeated here.

[0282] Based on this, in order to connect the PN junctions 2210 of different light-emitting devices in a single first light-emitting chip 22 in parallel, such as Figure 7B As shown, in each light-emitting device, among the M (e.g., M=2) sequentially arranged PN junctions, the first semiconductor doped layer 2211 of the first PN junction 2110_a serves as the first end of the light-emitting device and can be electrically connected to a first electrode pad through the first via 30. Furthermore, the second semiconductor doped layer 2212 of the second PN junction 2110_b serves as the second end of the light-emitting device and is electrically connected to the second electrode pad 223 through the second via 31 to achieve a common electrode configuration.

[0283] Furthermore, in order to connect two adjacent PN junctions in each light-emitting device in series, for example, the first PN junction 2110_a and the second PN junction 2110_b are connected in series, such as... Figure 7B As shown, the second semiconductor doped layer 2212 of the first PN junction 2110_a in two adjacent PN junctions can be electrically connected to the first semiconductor doped layer 2211 of the second PN junction 2110_b through the electrode bridge lead 32.

[0284] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A backlight module, characterized in that, include: Circuit board; as well as, Multiple light-emitting chips are disposed on the circuit board; wherein, the multiple light-emitting chips include a first light-emitting chip, the first light-emitting chip comprising: The substrate has a support surface and a light-emitting surface arranged opposite to each other; the support surface is close to the circuit board, and the side where the light-emitting surface is located is the light-emitting side of the first light-emitting chip; S light-emitting devices are spaced apart on the bearing surface of the substrate; each light-emitting device includes at least one PN junction; S≥2, where S is a positive integer; S first electrode pads are disposed on the side of the light-emitting device close to the circuit board and are electrically connected to the circuit board; the S first electrode pads are also electrically connected to the first ends of the S light-emitting devices respectively; and, The second electrode pad is disposed on the side of the light-emitting device close to the circuit board and is electrically connected to the circuit board; the second electrode pad is electrically connected to the second end of the PN junction of the S light-emitting devices. The light-emitting device includes M PN junctions arranged in sequence, each PN junction comprising a first semiconductor doped layer and a second semiconductor doped layer stacked together; M ≥ 2, where M is a positive integer; In each of the M sequentially arranged PN junctions of the light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad; the second semiconductor doped layer of the Mth PN junction serves as the second end of the light-emitting device and is electrically connected to the second electrode pad; and the first semiconductor doped layer of one of two adjacent PN junctions is electrically connected to the second semiconductor doped layer of the other PN junction. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer and the second semiconductor doped layer is a P-type semiconductor doped layer.

2. The backlight module according to claim 1, characterized in that, The backlight module further includes multiple light control structures, which are disposed on the light-emitting side of the first light-emitting chip; one light control structure is disposed on one of the first light-emitting chips; The light control structure includes S interconnected light control units, each of which is covered by a light-emitting device; the surface of the light control unit away from the light-emitting device is curved; the curved surface is used to change the direction of light transmission, so that the light control unit emits the received light along a preset direction; Wherein, the preset direction is the direction away from the connection position of the S light control units; S is an even number, and the preset directions of the light rays emitted by two adjacent light control units are different.

3. The backlight module according to claim 2, characterized in that, The first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the bearing surface of the substrate; the isolation trench is disposed between two adjacent light-emitting devices; The light control unit has a first cross section, which is perpendicular to the bearing surface and intersects the extension direction of the isolation groove; The shape of the first cross section away from the edge of the light-emitting device includes: The straight segment is inclined; the distance between the end of the straight segment closest to the isolation groove and the bearing surface is less than the distance between the end of the straight segment furthest from the isolation groove and the bearing surface. The first curved segment is located at the end of the straight segment away from the isolation groove and is connected to the straight segment; along the direction away from the isolation groove, the distance from each point on the first curved segment to the bearing surface gradually decreases.

4. The backlight module according to claim 2, characterized in that, The first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the bearing surface of the substrate; the isolation trench is disposed between two adjacent light-emitting devices; The light control unit has a first cross section, which is perpendicular to the bearing surface and intersects the extension direction of the isolation groove; The shape of the first cross section away from the edge of the light-emitting device includes: In the second curved segment, along the direction away from the isolation groove, the distance from each point on the second curved segment to the bearing surface gradually increases; Where S is an even number; the light control unit is used to perform total internal reflection of the received light through the curved surface where the second curve segment is located, and to emit the total internally reflected light from the side surface away from the isolation groove.

5. The backlight module according to claim 3 or 4, characterized in that, The light control unit has a second cross section, which is perpendicular to the bearing surface and perpendicular to the first direction; the shape of the second cross section includes arc segments on the side away from the light-emitting device. S=2; The vertical projection of the first light-emitting chip onto the bearing surface is a first rectangle, the first rectangle having a first long side L1 along the first direction and a first short side L2 along the second direction; The ratio of the first long side L1 to the first short side L2 is: L1:L2≥1.5:1; The first direction is perpendicular to the extension direction of the isolation groove and parallel to the bearing surface; the second direction is parallel to the extension direction of the isolation groove and parallel to the bearing surface.

6. The backlight module according to claim 3 or 4, characterized in that, The light control unit has a second cross section, which is perpendicular to the bearing surface and perpendicular to the first direction; the shape of the second cross section includes arc segments on the side away from the light-emitting device. S=4; The vertical projection of the first light-emitting chip onto the bearing surface is a second rectangle, the second rectangle having a second long side L3 along the first direction and a second short side L4 along the second direction; The ratio of the second long side L3 to the second short side L4 is: L3:L4≤1.2:1; The first direction is perpendicular to the extension direction of the isolation groove and parallel to the bearing surface; the second direction is parallel to the extension direction of the isolation groove and parallel to the bearing surface.

7. The backlight module according to any one of claims 1-4, characterized in that, The backlight module further includes multiple reflective structures disposed on the circuit board, with one reflective structure surrounding at least a portion of the periphery of one of the first light-emitting chips; the reflective structure has a reflective surface for reflecting the light emitted from the first light-emitting chip.

8. The backlight module according to claim 7, characterized in that, The reflective structure includes: The first reflective barrier is arranged around the first light-emitting chip to form a reflective area; Multiple second reflective barriers, at least one of which is located within the reflective area; one end of the second reflective barrier is connected to the first reflective barrier, and the other end of the second reflective barrier extends between two adjacent light-emitting devices in the first light-emitting chip; The second reflective barrier is used to divide the reflective area into multiple sub-reflective areas, with each light-emitting device located within one of the sub-reflective areas; the reflective surface includes the surface of the first reflective barrier near the first light-emitting chip, and the surface of the second reflective barrier near the sub-reflective area.

9. The backlight module according to claim 7, characterized in that, The first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the bearing surface of the substrate; The reflective structure has a third cross section, which is perpendicular to the circuit board and intersects the extending direction of the isolation groove; the third cross section is triangular in shape, and the base of the triangle is located on the side where the circuit board is located.

10. The backlight module according to claim 7, characterized in that, The reflective structure is made of at least one of metallic materials and white resin materials.

11. The backlight module according to claim 7, characterized in that, The reflective structure includes: A support portion is disposed on the circuit board; A metal reflective sheet covers the surface of the support portion.

12. The backlight module according to claim 1, characterized in that, The value range of M is: 2≤M≤8.

13. The backlight module according to any one of claims 1-4, characterized in that, The circuit board includes: At least one first sub-circuit board, which is strip-shaped; Multiple second sub-circuit boards are provided, each sub-circuit board being strip-shaped and intersecting with the first sub-circuit board; one end of each second sub-circuit board is connected to one end of the first sub-circuit board; there is a gap between two adjacent second sub-circuit boards; wherein, a portion of the multiple first light-emitting chips is disposed on the first sub-circuit board and another portion is disposed on the second sub-circuit board.

14. The backlight module according to any one of claims 1-4, characterized in that, Multiple arrays of the first light-emitting chips are arranged on the circuit board.

15. A backlight module, characterized in that, include: Circuit board; as well as, Multiple light-emitting chips are disposed on the circuit board; wherein, the multiple light-emitting chips include a first light-emitting chip, the first light-emitting chip comprising: The substrate has a support surface and a light-emitting surface arranged opposite to each other; the support surface is close to the circuit board, and the side where the light-emitting surface is located is the light-emitting side of the first light-emitting chip; A first light-emitting device includes at least one PN junction disposed on the carrier surface of the substrate; The second light-emitting device includes at least one PN junction, which is disposed on the bearing surface of the substrate and spaced apart from the first light-emitting device; The left first electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to the first end of the first light-emitting device and the circuit board; The right first electrode pad is disposed on the side of the second light-emitting device near the circuit board and is electrically connected to the first end of the second light-emitting device and the circuit board; and, The second electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to the circuit board; the second electrode pad is also electrically connected to the second end of the first light-emitting device and the second end of the second light-emitting device. Either the first light-emitting device or the second light-emitting device includes two PN junctions arranged in sequence, each PN junction including a first semiconductor doped layer and a second semiconductor doped layer stacked together; the two PN junctions arranged in sequence are the first PN junction and the second PN junction, respectively. In the first light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the first light-emitting device and is electrically connected to the left first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the first light-emitting device and is electrically connected to the second electrode pad. In the second light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the second light-emitting device and is electrically connected to the right first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the second light-emitting device and is electrically connected to the second electrode pad. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer and the second semiconductor doped layer is a P-type semiconductor doped layer.

16. A backlight module, characterized in that, include: Circuit board; as well as, Multiple light-emitting chips are disposed on the circuit board; wherein, the multiple light-emitting chips include a first light-emitting chip, the first light-emitting chip comprising: The substrate has a support surface and a light-emitting surface arranged opposite to each other; the support surface is close to the circuit board, and the side where the light-emitting surface is located is the light-emitting side of the first light-emitting chip; A first light-emitting device includes at least one PN junction disposed on the carrier surface of the substrate; The second light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate; A third light-emitting device includes at least one PN junction disposed on the bearing surface of the substrate; A fourth light-emitting device includes at least one PN junction disposed on the carrier surface of the substrate; the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device are disposed at intervals; The upper left first electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to the first end of the first light-emitting device and the circuit board; The lower left first electrode pad is disposed on the side of the second light-emitting device close to the circuit board and is electrically connected to the first end of the second light-emitting device and the circuit board; The upper right first electrode pad is disposed on the side of the third light-emitting device close to the circuit board and is electrically connected to the first end of the third light-emitting device and the circuit board; The lower right first electrode pad is disposed on the side of the fourth light-emitting device near the circuit board and is electrically connected to the first end of the fourth light-emitting device and the circuit board; and, The second electrode pad is disposed on the side of the first light-emitting device close to the circuit board and is electrically connected to the circuit board; the second electrode pad is also electrically connected to the second end of the first light-emitting device, the second end of the second light-emitting device, the second end of the third light-emitting device, and the second end of the fourth light-emitting device. Any one of the first light-emitting device, the second light-emitting device, the third light-emitting device, and the fourth light-emitting device includes two PN junctions arranged in sequence, each PN junction including a first semiconductor doped layer and a second semiconductor doped layer stacked together; the two PN junctions arranged in sequence are the first PN junction and the second PN junction, respectively. In the first light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the first light-emitting device and is electrically connected to the upper left first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the first light-emitting device and is electrically connected to the second electrode pad. In the second light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the second light-emitting device and is electrically connected to the lower left first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the second light-emitting device and is electrically connected to the second electrode pad. In the third light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the third light-emitting device and is electrically connected to the upper right first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the third light-emitting device and is electrically connected to the second electrode pad. In the fourth light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the fourth light-emitting device and is electrically connected to the lower right first electrode pad; the second semiconductor doped layer of the first PN junction is electrically connected to the first semiconductor doped layer of the second PN junction; and the second semiconductor doped layer of the second PN junction serves as the second end of the fourth light-emitting device and is electrically connected to the second electrode pad. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer and the second semiconductor doped layer is a P-type semiconductor doped layer.

17. A display terminal, characterized in that, include: LCD display panel, And a backlight module as described in any one of claims 1-16, wherein the backlight module is disposed on the back side of the liquid crystal display panel and is used to provide a backlight source to the liquid crystal display panel.

18. A display panel, characterized in that, include: Circuit board; as well as, Multiple light-emitting chips are disposed on the circuit board; wherein, the multiple light-emitting chips include a first light-emitting chip, the first light-emitting chip comprising: The substrate has a support surface and a light-emitting surface arranged opposite to each other; the support surface is close to the circuit board, and the side where the light-emitting surface is located is the light-emitting side of the first light-emitting chip; S light-emitting devices are spaced apart on the bearing surface of the substrate; each light-emitting device includes at least one PN junction; S≥2, where S is a positive integer; S first electrode pads are disposed on the side of the light-emitting device close to the circuit board and are electrically connected to the circuit board; the S first electrode pads are also electrically connected to the first ends of the S light-emitting devices respectively; and, The second electrode pad is disposed on the side of the light-emitting device close to the circuit board and is electrically connected to the circuit board; the second electrode pad is electrically connected to the second end of each of the S light-emitting devices; The light-emitting device includes M PN junctions arranged in sequence, each PN junction comprising a first semiconductor doped layer and a second semiconductor doped layer stacked together; M ≥ 2, where M is a positive integer; In each of the M sequentially arranged PN junctions of the light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad; the second semiconductor doped layer of the Mth PN junction serves as the second end of the light-emitting device and is electrically connected to the second electrode pad; and the first semiconductor doped layer of one of two adjacent PN junctions is electrically connected to the second semiconductor doped layer of the other PN junction. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer and the second semiconductor doped layer is a P-type semiconductor doped layer.

19. The display panel according to claim 18, characterized in that, The display panel further includes multiple light control structures, which are disposed on the light-emitting side of the first light-emitting chip; one light control structure is disposed on one of the first light-emitting chips; The light control structure includes S interconnected light control units, each of which is covered by a light-emitting device; the surface of the light control unit away from the light-emitting device is curved; the curved surface is used to change the direction of light transmission, so that the light control unit emits the received light along a preset direction; Wherein, the preset direction is the direction away from the connection position of the S light control units; S is an even number, and the preset directions of the light rays emitted by two adjacent light control units are different.

20. The display panel according to claim 19, characterized in that, The first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the bearing surface of the substrate; the isolation trench is disposed between two adjacent light-emitting devices; The light control unit has a first cross section, which is perpendicular to the bearing surface and intersects the extension direction of the isolation groove; The shape of the first cross section away from the edge of the light-emitting device includes: The straight segment is inclined; the distance between the end of the straight segment closest to the isolation groove and the bearing surface is less than the distance between the end of the straight segment furthest from the isolation groove and the bearing surface. The first curved segment is located at the end of the straight segment away from the isolation groove and is connected to the straight segment; along the direction away from the isolation groove, the distance from each point on the first curved segment to the bearing surface gradually decreases.

21. The display panel according to claim 19, characterized in that, The first light-emitting chip further includes at least one isolation trench, the bottom of which is located on the bearing surface of the substrate; the isolation trench is disposed between two adjacent light-emitting devices; The light control unit has a first cross section, which is perpendicular to the bearing surface and intersects the extension direction of the isolation groove; The shape of the first cross section away from the edge of the light-emitting device includes: In the second curved segment, along the direction away from the isolation groove, the distance from each point on the second curved segment to the bearing surface gradually increases; Where S is an even number; the light control unit is used to perform total internal reflection of the received light through the curved surface where the second curve segment is located, and to emit the total internally reflected light from the side surface away from the isolation groove.

22. The display panel according to claim 20 or 21, characterized in that, The light control unit has a second cross section, which is perpendicular to the bearing surface and perpendicular to the first direction; the shape of the second cross section includes arc segments on the side away from the light-emitting device. S=2; The vertical projection of the first light-emitting chip onto the bearing surface is a first rectangle, the first rectangle having a first long side L1 along the first direction and a first short side L2 along the second direction; The ratio of the first long side L1 to the first short side L2 is: L1:L2≥1.5:1; The first direction is perpendicular to the extension direction of the isolation groove and parallel to the bearing surface; the second direction is parallel to the extension direction of the isolation groove and parallel to the bearing surface.

23. The display panel according to claim 20 or 21, characterized in that, The light control unit has a second cross section, which is perpendicular to the bearing surface and perpendicular to the first direction; the shape of the second cross section includes arc segments on the side away from the light-emitting device. S=4; The vertical projection of the first light-emitting chip onto the bearing surface is a second rectangle, the second rectangle having a second long side L3 along the first direction and a second short side L4 along the second direction; The ratio of the second long side L3 to the second short side L4 is: L3:L4≤1.2:1; The first direction is perpendicular to the extension direction of the isolation groove and parallel to the bearing surface; the second direction is parallel to the extension direction of the isolation groove and parallel to the bearing surface.

24. The display panel according to any one of claims 18-21, characterized in that, The display panel further includes multiple reflective structures disposed on the circuit board, with one reflective structure surrounding at least a portion of the periphery of one of the first light-emitting chips; the reflective structure has a reflective surface for reflecting the light emitted from the first light-emitting chip.

25. The display panel according to claim 24, characterized in that, The reflective structure includes: The first reflective barrier is arranged around the first light-emitting chip to form a reflective area; Multiple second reflective barriers, at least one of which is located within the reflective area; one end of the second reflective barrier is connected to the first reflective barrier, and the other end of the second reflective barrier extends between two adjacent light-emitting devices in the first light-emitting chip; The second reflective barrier is used to divide the reflective area into multiple sub-reflective areas, with each light-emitting device located within one of the sub-reflective areas; the reflective surface includes the surface of the first reflective barrier near the first light-emitting chip, and the surface of the second reflective barrier near the sub-reflective area.

26. The display panel according to any one of claims 18-21, characterized in that, The display panel has multiple pixels; at least three of the first light-emitting chips located within the same pixel emit three primary colors of light respectively.

27. The display panel according to any one of claims 18-21, characterized in that, The display panel has multiple pixels; the display panel also includes a color conversion layer, which is located on the light-emitting side of the first light-emitting chip; The color conversion layer is used to convert the light emitted by at least three of the first light-emitting chips located in the same pixel into three primary colors of light.

28. A display terminal, characterized in that, include: processor; The display panel as described in any one of claims 18-27, wherein the display panel is electrically connected to the processor.

29. A light strip, characterized in that, include: Circuit board; as well as, Multiple light-emitting chips are disposed on the circuit board; wherein, the multiple light-emitting chips include a first light-emitting chip, the first light-emitting chip comprising: The substrate has a support surface and a light-emitting surface arranged opposite to each other; the support surface is close to the circuit board, and the side where the light-emitting surface is located is the light-emitting side of the first light-emitting chip; S light-emitting devices are spaced apart on the bearing surface of the substrate; each light-emitting device includes at least one PN junction; S≥2, where S is a positive integer; S first electrode pads are disposed on the side of the light-emitting device close to the circuit board and are electrically connected to the circuit board; the S first electrode pads are also electrically connected to the first ends of the S light-emitting devices respectively; and, The second electrode pad is disposed on the side of the light-emitting device close to the circuit board and is electrically connected to the circuit board; the second electrode pad is electrically connected to the second end of the PN junction of the S light-emitting devices. The light-emitting device includes M PN junctions arranged in sequence, each PN junction comprising a first semiconductor doped layer and a second semiconductor doped layer stacked together; M ≥ 2, where M is a positive integer; In each of the M sequentially arranged PN junctions of the light-emitting device, the first semiconductor doped layer of the first PN junction serves as the first end of the light-emitting device and is electrically connected to a first electrode pad; the second semiconductor doped layer of the Mth PN junction serves as the second end of the light-emitting device and is electrically connected to the second electrode pad; and the first semiconductor doped layer of one of two adjacent PN junctions is electrically connected to the second semiconductor doped layer of the other PN junction. Wherein, the first semiconductor doped layer is a P-type semiconductor doped layer and the second semiconductor doped layer is an N-type semiconductor doped layer; or, the first semiconductor doped layer is an N-type semiconductor doped layer and the second semiconductor doped layer is a P-type semiconductor doped layer.

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