Silicon optical device and method of manufacturing the same

Abstract

The application provides a silicon optical device and a manufacturing method thereof. The silicon optical device comprises a substrate, an isolation structure and an epitaxial structure. The side isolation structure in the isolation structure is arranged on the substrate, the epitaxial structure comprises a plurality of epitaxial layers arranged in sequence along the direction of the top isolation structure pointing to the substrate and in contact with the side isolation structure, and the top isolation structure in the isolation structure and the adjacent epitaxial layer are isolated by the interlayer isolation structure in the isolation structure through the top surface of the epitaxial layer farthest from the substrate, so that the integration degree is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to silicon photonic devices and their manufacturing methods. Background Technology

[0002] Traditional silicon photonic devices are generally fabricated from a single layer of silicon surface to form structures such as waveguides, gratings, and modulators. Their integration is limited, making it impossible to achieve high-density integration and resulting in high costs.

[0003] Therefore, it is necessary to develop new silicon photonic devices to solve the aforementioned problems in the existing technology. Summary of the Invention

[0004] The purpose of this invention is to provide a silicon photonic device and its manufacturing method to improve integration.

[0005] To achieve the above objectives, the silicon photonic device of the present invention comprises:

[0006] Substrate;

[0007] The isolation structure includes a top isolation structure, an interlayer isolation structure, and a side isolation structure disposed on the substrate;

[0008] An epitaxial structure includes a plurality of epitaxial layers sequentially disposed along the direction of the top isolation structure toward the substrate and in contact with the side isolation structure;

[0009] Among the plurality of epitaxial layers, the top isolation structure is provided on the top surface of the epitaxial layer farthest from the substrate, and adjacent epitaxial layers are isolated by the interlayer isolation structure to achieve electrical insulation.

[0010] The beneficial effects of the silicon photonics device of the present invention are as follows: the side isolation structure of the isolation structure is disposed on the substrate, the plurality of epitaxial layers are sequentially disposed along the direction of the top isolation structure pointing towards the substrate and in contact with the side isolation structure, and are isolated by the interlayer isolation structure through the top isolation structure disposed on the top surface of the epitaxial layer farthest from the substrate and the adjacent epitaxial layers, thereby improving the integration density.

[0011] Preferably, the silicon photonic device further includes at least one sealing gap disposed within the interlayer isolation structure, the sealing gap being located between at least one pair of adjacent epitaxial layers.

[0012] Preferably, the vertical distance between adjacent epitaxial layers is not less than 2 micrometers.

[0013] Preferably, the number of the epitaxial structures is at least two, and adjacent epitaxial structures are isolated by the top isolation structure and / or the side isolation structure to achieve electrical insulation.

[0014] Preferably, the side isolation structure surrounds the epitaxial structure, and each of the epitaxial layers is in contact with the two side walls of the side isolation structure that are radially opposite to each other along the substrate.

[0015] The method for manufacturing the silicon photonic device of the present invention includes the following steps:

[0016] S1: Provide a substrate, and use an epitaxial material and an epitaxial support material with an etching selectivity higher than that of the epitaxial material to perform an alternating film-forming reaction on the top surface of the substrate, and then use a top isolation material to perform a film-forming reaction to form a sequentially stacked original epitaxial structure and an original top isolation structure;

[0017] S2: Alternately remove a portion of the epitaxial support material and a portion of the epitaxial material until the top surface of the substrate portion is exposed, forming a first epitaxial structure, an original top isolation structure, and a trench disposed near the first epitaxial structure in sequence, and fill the trench with side isolation material to form a side isolation structure;

[0018] S3: Remove part of the original top isolation structure and part of the first epitaxial structure to expose part of the top surface of the substrate and part of the sidewall of the side isolation structure to form an opening; remove the epitaxial support material and perform a film-forming reaction using an interlayer isolation material to obtain an epitaxial structure comprising a plurality of epitaxial layers sequentially arranged along the extension direction of the sidewall of the side isolation structure, a top isolation structure disposed on the top surface of the epitaxial layer farthest from the substrate among the plurality of epitaxial layers, and an interlayer isolation structure located between adjacent epitaxial layers to achieve electrical insulation.

[0019] The beneficial effects of the silicon photonics device of the present invention are as follows: In step S2, after removing part of the original top isolation structure and part of the first epitaxial structure based on the structure obtained in step S1, a side isolation structure is formed by filling with a side isolation material. Then, in step S3, part of the original top isolation structure and part of the first epitaxial structure are removed to expose part of the top surface of the substrate and part of the side wall of the side isolation structure to form an opening. The epitaxial support material is removed and a film-forming reaction is performed using an interlayer isolation material, thereby obtaining a side isolation structure disposed on the substrate. Several epitaxial layers are sequentially disposed along the extension direction of the side wall of the side isolation structure. The top isolation structure is disposed on the top surface of the epitaxial layer farthest from the substrate, and the interlayer isolation structure isolates adjacent epitaxial layers, thereby improving the integration density.

[0020] Preferably, in step S3, the step of using an interlayer isolation material to perform a film-forming reaction includes: using the interlayer isolation material to perform chemical vapor deposition so that the interlayer isolation material covers the exposed surface of the first epitaxial structure through the opening, and forming a sealing gap between adjacent epitaxial layers of the first epitaxial structure.

[0021] Preferably, in step S2, during the process of alternately removing a portion of the epitaxial support material and a portion of the epitaxial material until the top surface of the substrate portion is exposed, the trench is controlled to surround the first epitaxial structure.

[0022] More preferably, the opening includes two sub-openings. In step S3, removing a portion of the original top isolation structure and a portion of the first epitaxial structure exposes a portion of the top surface of the substrate and a portion of the sidewall of the side isolation structure to form an opening. The steps of removing the epitaxial support material and performing a film-forming reaction using an interlayer isolation material include:

[0023] S31: Starting from the top surface of the original top isolation structure near the top surface of the side isolation structure, remove part of the original top isolation structure and part of the first epitaxial structure until part of the top surface of the substrate and the two radially opposite side walls of the side isolation structure are exposed, forming the two sub-openings;

[0024] S32: After removing the remaining epitaxial support material through the two sub-openings to form a cavity, the cavity is filled with the interlayer isolation material.

[0025] More preferably, the opening includes a first sub-opening and a second sub-opening. In step S3, removing a portion of the original top isolation structure and a portion of the first epitaxial structure exposes a portion of the top surface of the substrate and a portion of the sidewall of the side isolation structure to form the opening. The steps of removing the epitaxial support material and performing a film-forming reaction using an interlayer isolation material include:

[0026] S31: Starting from the top surface of the original top isolation structure near the top surface of the side isolation structure, remove part of the original top isolation structure and part of the first epitaxial structure until part of the top surface of the substrate and one sidewall of the side isolation structure are exposed, forming the first sub-opening cavity located in the area enclosed by the side isolation structure;

[0027] S32: After removing part of the epitaxial support material from the first sub-opening cavity to form a first cavity, the interlayer isolation material is deposited to form an original interlayer isolation structure that fills the first cavity;

[0028] S33: Starting from the top surface of the original interlayer isolation structure near the side isolation structure, remove a portion of the original interlayer isolation structure, a portion of the original top isolation structure, and a portion of the first epitaxial structure until a portion of the top surface of the substrate and the other sidewall of the side isolation structure are exposed, forming a second sub-opening located within the area enclosed by the side isolation structure;

[0029] S34: After removing the remaining epitaxial support material from the second sub-opening to form a second cavity, the second cavity is filled with the interlayer isolation material. Attached Figure Description

[0030] Figure 1 This is a top view of a silicon photonics device according to an embodiment of the present invention;

[0031] Figure 2 for Figure 1 The structure shown is a cross-sectional view along the AA direction.

[0032] Figure 3 This is a schematic diagram of the internal structure of another silicon photonic device according to an embodiment of the present invention;

[0033] Figure 4 This is a schematic diagram of a substrate with a deposited original epitaxial layer and an original top isolation structure according to an embodiment of the present invention.

[0034] Figure 5 In order to be in Figure 4 A schematic diagram of the structure obtained after removing part of the top isolation material, part of the extended support material, and part of the extended material from the structure shown.

[0035] Figure 6 In order to be in Figure 5 A schematic diagram of the structure obtained after filling the side isolation material on the basis of the structure shown.

[0036] Figure 7 In order to be in Figure 6 A schematic diagram of a structure obtained by removing part of the top isolation material, part of the extended support material, and part of the extended material from the structure shown.

[0037] Figure 8 In order to be in Figure 7 Top view of the structure shown;

[0038] Figure 9 In order to be in Figure 7 A schematic diagram of the structure obtained after removing the external support material from the structure shown.

[0039] Figure 10 In order to be in Figure 6 A schematic diagram of another structure obtained by removing part of the top isolation material, part of the extended support material, and part of the extended material from the structure shown.

[0040] Figure 11 In order to be in Figure 10 Top view of the structure shown;

[0041] Figure 12 In order to be in Figure 10 A schematic diagram of the structure obtained after removing part of the extended support material from the structure shown.

[0042] Figure 13 In order to be in Figure 12 A schematic diagram of the structure obtained after depositing interlayer isolation material on the structure shown.

[0043] Figure 14 In order to be in Figure 13 A schematic diagram of the structure obtained after removing part of the interlayer isolation material, part of the top isolation material, part of the extensional support material, and part of the extensional material from the structure shown.

[0044] Figure 15 In order to be in Figure 14 A schematic diagram of the structure obtained after removing the remaining extensional support material from the original structure;

[0045] Figure 16 Is Figure 15 A schematic diagram of the structure obtained after depositing interlayer isolation material on the structure shown. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0047] This invention provides a silicon photonic device and its manufacturing method to improve integration.

[0048] Figure 1 and Figure 2 The silicon photonic device shown includes a substrate 11, an isolation structure 12, and an epitaxial structure (not shown) comprising a plurality of epitaxial layers 131. The isolation structure 12 includes a top isolation structure 121, an interlayer isolation structure 122, and a side isolation structure 123 disposed on the substrate 11. The plurality of epitaxial layers 131 are arranged along the direction from the top isolation structure 121 toward the substrate 11. Figure 2 The CC direction shown is arranged sequentially and contacts the side isolation structure 123 to improve integration.

[0049] In some embodiments, the substrate 11 is formed by sequentially stacking a bottom silicon layer and a buried oxide layer, and both the isolation structure 12 and the epitaxial structure are disposed on the buried oxide layer.

[0050] In some embodiments, the epitaxial layer 131 is composed of a single-crystal semiconductor material, specifically single-crystal silicon.

[0051] In some embodiments, the side isolation structure 123 is composed of an electrically insulating material, specifically silicon oxide.

[0052] In some embodiments, the number of epitaxial structures is at least two. Adjacent epitaxial structures are isolated by the top isolation structure 121 and / or the side isolation structure 123 to achieve electrical insulation.

[0053] In some embodiments, when at least two of the epitaxial structures are along Figure 1 Arranged in the AA direction as shown, or along Figure 2 The CC direction shown is arranged away from the substrate 11, and adjacent epitaxial structures are isolated by the side isolation structure 123. The shape and size of the side isolation structure 123 can be flexibly adjusted according to process requirements. For example, refer to... Figure 1 and Figure 2 The top isolation structure 121 is disposed on top of the side isolation structure 123 and covers the top surface of the epitaxial layer 131 furthest from the substrate 11. The side isolation structure 123 surrounds a plurality of the epitaxial layers 131.

[0054] In some embodiments, reference is made to Figure 1 and Figure 2 The side isolation structure 123 includes a first sub-side isolation structure 124 and a second sub-side isolation structure 125 disposed radially opposite to each other along the substrate 11, so as to contact the two side walls of each epitaxial layer 131 that are opposite to each other along the BB direction.

[0055] In some embodiments, the side isolation structure 123 has only the first sub-side isolation structure 124, and the plurality of epitaxial layers 131 are along Figure 2 The CC direction is sequentially arranged on the side wall of the first sub-side isolation structure 124.

[0056] In some embodiments, adjacent epitaxial layers 131 are isolated by the interlayer isolation structure 122 to achieve electrical insulation between them. For example, see reference to... Figure 2 The side isolation structure 123 covers the sidewall and bottom surface of the epitaxial layer 131 furthest from the substrate 11, as well as the exposed surfaces of the other epitaxial layers 131 except for the epitaxial layer 131 furthest from the substrate 11.

[0057] In some embodiments, reference is made to Figure 2 The vertical distance between adjacent epitaxial layers 131, that is, the distance along the CC direction between the bottom surface of the epitaxial layer 131 away from the substrate 11 and the top surface of the epitaxial layer 131 close to the substrate 11, is not less than 2 micrometers.

[0058] In some embodiments, the vertical distance between adjacent epitaxial layers 131 is not less than 2 micrometers and not more than 5 micrometers.

[0059] In some embodiments, reference is made to Figure 2 and Figure 3 , Figure 2 The silicon photonic device shown also includes at least one sealing gap 14 disposed within the interlayer isolation structure 122, the sealing gap 14 being located between at least one pair of adjacent epitaxial layers 13. The refractive effect of the sealing gap 14 on light is smaller than that of the interlayer isolation structure 122, reducing the refractive effect of the structure between adjacent epitaxial layers 131 on light, and helping to reduce losses.

[0060] The present invention also provides a method for manufacturing the silicon photonic device, including steps S1 to S4.

[0061] In some embodiments of S1, reference is made to Figure 4 An epitaxial material and an epitaxial support material are alternately used to form a film on the top surface of the substrate 11, followed by a top isolation material to form a film on the top surface of the substrate 11. This results in an original epitaxial structure (not shown in the figure) and an original top isolation structure 43, which are formed by alternating stacking of the original epitaxial layer 41 and the original epitaxial support layer 42. Specifically, the original epitaxial layer 41 closest to the substrate 11 covers the top surface of the substrate 11, and the original top isolation structure 43 covers the top surface of the epitaxial layer 41 furthest from the substrate 11.

[0062] In some embodiments, the etching selectivity of the epitaxial support material is higher than that of the epitaxial material.

[0063] In some embodiments, the ratio of the etching selectivity of the epitaxial support material to that of the epitaxial material relative to the same reference material is greater than 5:1.

[0064] In some embodiments, both the epitaxial support material and the constituent materials of the epitaxial material are epitaxial materials. The specific materials are selected so that a uniform epitaxial layer with low defects can be formed on the corresponding substrate surface by conventional epitaxial processes.

[0065] In some specific embodiments, the epitaxial material is silicon, and the epitaxial support material is silicon germanide (SiGe).

[0066] In step S2 of some embodiments, reference is made to Figures 4 to 6 Starting from the top surface of the original top isolation structure 43, a portion of the original top isolation structure 43 is removed in a direction pointing towards the substrate 11. Then, portions of the original epitaxial layer 41 and the original epitaxial support layer 42 are sequentially and alternately removed until a portion of the top surface of the substrate 11 is exposed, resulting in an annular trench 51. After depositing a side isolation material, a portion of the side isolation material is removed to fill the annular trench 51, resulting in the side isolation structure 123.

[0067] In some embodiments, step S3 includes step S31: removing a portion of the original top isolation structure and a portion of the first epitaxial structure from the top surface of the original top isolation structure near the top surface of the side isolation structure 123 until a portion of the top surface of the substrate 11 and a portion of the sidewall of the side isolation structure 123 are exposed to form two sub-openings. Specifically, refer to... Figures 6 to 8 , Figure 6 The portion of the original epitaxial layer 41 surrounded by the side isolation structure 123 and the portion of the original epitaxial support layer 42 surrounded by the side isolation structure 123, shown, are alternately stacked to form a first epitaxial structure. The portion of the original top isolation structure 43 surrounded by the side isolation structure 123 constitutes the original top isolation structure. Starting from the top surface of the original top isolation structure 43, a portion of the original top isolation structure (not shown) and a portion of the first epitaxial structure (not shown) are removed along the direction pointing towards the substrate 11 until a portion of the top surface of the substrate 11 and a portion of the sidewall of the side isolation structure 123 are exposed to form a structure within the area surrounded by the side isolation structure 123, and along... Figure 8 The first sub-opening cavity 71 and the second sub-opening cavity 72, which are arranged opposite each other in the AA direction, simultaneously form the epitaxial layer 131 and the epitaxial support layer 42, which are surrounded by the side isolation structure 123 and stacked alternately, and form the top isolation structure 121, which is surrounded by the side isolation structure 123 and covers the top surface of the epitaxial layer 131 that is furthest from the substrate 11. The two ends of each epitaxial layer 131, each epitaxial support layer 42 and the top isolation structure 121 along the BB direction are respectively fixed to the first sub-side isolation structure 124 and the second sub-side isolation structure 125, which are arranged radially opposite each other in the side isolation structure 123 along the substrate 11.

[0068] After step S31 in some embodiments is completed, step S32 is executed: refer to Figure 2 , Figure 7 and Figure 9After removing the epitaxial support layers 42 through the first sub-opening cavities 71 and the second sub-opening cavities 72 using a high-selectivity wet etching process to form the opening cavities surrounding the side isolation structures, chemical vapor deposition is performed using the interlayer isolation material to cover the exposed surfaces of each epitaxial layer 131 and form the sealing gaps 14 between adjacent epitaxial layers 131. Then, part of the interlayer isolation material is removed to expose the top surfaces of the top isolation structure 121 and the side isolation structure 123, resulting in... Figure 2 The structure shown.

[0069] In some embodiments, reference is made to Figure 3 , Figures 10 to 16 The side isolation structure 123 includes a third sub-side isolation structure 126 and a fourth sub-side isolation structure 127 opposite to each other along the AA direction. Step S3 includes:

[0070] S31: Starting from the top surface of the original top isolation structure 43 near the third sub-side isolation structure 126, remove a portion of the original top isolation structure 43 and a portion of the first epitaxial structure consisting of the epitaxial layer 131 and epitaxial support layer 42, which are surrounded by the side isolation structure 123 and stacked alternately, until a portion of the top surface of the substrate 11 and one sidewall of the third sub-side isolation structure 126 are exposed, forming... Figure 11 The first sub-opening 71, surrounded by the side isolation structure 123, is shown.

[0071] S32: Using a high-selectivity wet etching process, a portion of the epitaxial support layer 42 between adjacent original epitaxial layers 41 enclosed by the side isolation structure 123 is removed through the first sub-opening 71, exposing the top surface of the substrate 11 and the surface of each of the original epitaxial layers 41. Figure 12 The first cavity 1201 shown is then formed by chemical vapor deposition using the interlayer isolation material. Figure 13 The original interlayer isolation layer 1301 shown fills the first cavity 1201 and covers the top surface of the side isolation structure 123 and the top surface of the top isolation structure 121, and the sealing gap 14 is formed between adjacent original epitaxial layers 41;

[0072] S33: Starting from the top surface of the original interlayer isolation layer 1301 near the fourth sub-side isolation structure 127, remove a portion of the original interlayer isolation layer 1301 surrounded by the side isolation structure 123, a portion of the original top isolation structure 43 surrounded by the side isolation structure 123, a portion of each of the original epitaxial layers 41 surrounded by the side isolation structure 123, and a portion of each of the epitaxial support layers 42 surrounded by the side isolation structure 123 until a portion of the top surface of the substrate 11 and a sidewall of the fourth sub-side isolation structure 127 are exposed, forming a second sub-opening 72 surrounded by the side isolation structure 123 and opposite to the first sub-opening 71 in the AA direction;

[0073] S34: The remaining epitaxial support layer 42 is removed through the second sub-opening 72 using a high-selectivity wet etching process to form... Figure 15 After the second cavity 1501 is shown, chemical vapor deposition is performed using the interlayer isolation material to fill the second cavity 1501 and cover the top surface of the original interlayer isolation layer 1301, and to form between adjacent original epitaxial layers 41. Figure 16 The sealing gap 14 shown is then partially removed until the top insulating structure 121 is exposed. Figure 3 The structure shown.

[0074] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A silicon photonic device, characterized in that, include: Substrate; The isolation structure includes a top isolation structure, an interlayer isolation structure, and a side isolation structure disposed on the substrate; An epitaxial structure includes a plurality of epitaxial layers sequentially disposed along the direction of the top isolation structure toward the substrate and in contact with the side isolation structure; Among the plurality of epitaxial layers, the top isolation structure is disposed on the top surface of the epitaxial layer farthest from the substrate, and adjacent epitaxial layers are isolated by the interlayer isolation structure to achieve electrical insulation; the side isolation structure surrounds the epitaxial structure, and each epitaxial layer is in contact with the two radially opposite side walls of the side isolation structure of the side isolation structure. It also includes at least one sealing gap disposed within the interlayer isolation structure, the sealing gap being located between at least a pair of adjacent epitaxial layers; the refractive effect of the sealing gap on light is smaller than that of the interlayer isolation structure, so as to reduce the refractive effect of the structure between adjacent epitaxial layers on light.

2. The silicon photonic device according to claim 1, characterized in that, The vertical distance between adjacent epitaxial layers is not less than 2 micrometers.

3. The silicon photonic device according to claim 1, characterized in that, The number of the epitaxial structures is at least 2, and adjacent epitaxial structures are electrically insulated from each other by the top isolation structure and / or the side isolation structure.

4. A method for manufacturing a silicon photonic device, used to manufacture the silicon photonic device as described in any one of claims 1 to 3, characterized in that, Includes the following steps: S1: Provide a substrate, and use an epitaxial material and an epitaxial support material with an etching selectivity higher than that of the epitaxial material to perform an alternating film-forming reaction on the top surface of the substrate, and then use a top isolation material to perform a film-forming reaction to form a sequentially stacked original epitaxial structure and an original top isolation structure; S2: Alternately remove a portion of the epitaxial support material and a portion of the epitaxial material until the top surface of the substrate portion is exposed, forming a first epitaxial structure, an original top isolation structure, and a trench disposed near the first epitaxial structure in sequence, and fill the trench with side isolation material to form a side isolation structure; S3: Remove part of the original top isolation structure and part of the first epitaxial structure to expose part of the top surface of the substrate and part of the sidewall of the side isolation structure to form an opening in the area enclosed by the side isolation structure. Remove the epitaxial support material and perform a film-forming reaction using an interlayer isolation material to obtain an epitaxial structure comprising a plurality of epitaxial layers arranged sequentially along the extension direction of the sidewall of the side isolation structure, a top isolation structure disposed on the top surface of the epitaxial layer farthest from the substrate among the plurality of epitaxial layers, and an interlayer isolation structure located between adjacent epitaxial layers to achieve electrical insulation.

5. The method for manufacturing a silicon photonic device according to claim 4, characterized in that, In step S3, the step of using an interlayer separator material to perform the film-forming reaction includes: Chemical vapor deposition is performed using the interlayer isolation material to cover the exposed surface of the first epitaxial structure through the opening, and to form a sealed gap between adjacent epitaxial layers of the first epitaxial structure.

6. The method for manufacturing a silicon photonic device according to claim 4, characterized in that, In step S2, during the process of alternately removing a portion of the epitaxial support material and a portion of the epitaxial material until the top surface of the substrate portion is exposed, the trench is controlled to surround the first epitaxial structure.

7. The method for manufacturing a silicon photonic device according to claim 6, characterized in that, The opening includes two sub-openings. In step S3, removing a portion of the original top isolation structure and a portion of the first epitaxial structure exposes a portion of the top surface of the substrate and a portion of the sidewall of the side isolation structure to form an opening within the area enclosed by the side isolation structure. The steps of removing the epitaxial support material and performing a film-forming reaction using an interlayer isolation material include: S31: Starting from the top surface of the original top isolation structure near the top surface of the side isolation structure, remove part of the original top isolation structure and part of the first epitaxial structure until part of the top surface of the substrate and the two radially opposite side walls of the side isolation structure are exposed, forming the two sub-openings located within the area enclosed by the side isolation structure. S32: After removing the remaining epitaxial support material through the two sub-openings to form a cavity, the cavity is filled with the interlayer isolation material.

8. The method for manufacturing a silicon photonic device according to claim 6, characterized in that, The opening includes a first sub-opening and a second sub-opening located within the area enclosed by the side isolation structure. In step S3, removing a portion of the original top isolation structure and a portion of the first epitaxial structure exposes a portion of the top surface of the substrate and a portion of the sidewall of the side isolation structure to form an opening within the area enclosed by the side isolation structure. The steps of removing the epitaxial support material and performing a film-forming reaction using an interlayer isolation material include: S31: Starting from the top surface of the original top isolation structure near the top surface of the side isolation structure, remove part of the original top isolation structure and part of the first epitaxial structure until part of the top surface of the substrate and one sidewall of the side isolation structure are exposed, forming the first sub-opening cavity located in the area enclosed by the side isolation structure; S32: After removing part of the epitaxial support material from the first sub-opening cavity to form a first cavity, the interlayer isolation material is deposited to form an original interlayer isolation structure that fills the first cavity; S33: Starting from the top surface of the original interlayer isolation structure near the side isolation structure, remove a portion of the original interlayer isolation structure, a portion of the original top isolation structure, and a portion of the first epitaxial structure until a portion of the top surface of the substrate and the other sidewall of the side isolation structure are exposed, forming a second sub-opening located within the area enclosed by the side isolation structure; S34: After removing the remaining epitaxial support material from the second sub-opening to form a second cavity, the second cavity is filled with the interlayer isolation material.

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