Chemical residue removal process for high-purity alumina material thimble-like components

Abstract

The present application relates to a kind of high-purity alumina material needle class component chemical residue removal process, process steps are as follows:1) component incoming inspection,2) component pretreatment,3) component cleaning treatment,4) component cleaning treatment,5) component cleaning treatment,6) component is placed in the drying oven after detection,7) high temperature baking to 1000 DEG C and drop to 60 DEG C process,8) after high temperature baking,9) component is placed in the drying oven after detection,10) final component vacuum plus anti-static package.The present application is compared with existing cleaning process, increase different frequency ultrasonic cleaning, compared with existing process cleaning this kind of ceramic material needle product, superficial layer different particle size particle contaminant is more targeted removal.With traditional cleaning, increase oven cleaning and detection process, control in cleaning process equipment internal cleanliness and residue diffusion in baking process to component interior, the pollution caused to component.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition (CVD) precision component residue removal technology, specifically a high-purity alumina material ejector pin component used in CVD equipment for supporting wafers, and a chemical residue removal process for such components. Background Technology

[0002] In a chemical vapor deposition vacuum chamber, one or more gases are introduced and, at a specific temperature, a solid or a solid and multiple gases are generated. The solid is directly deposited on the wafer surface to form a thin film. The remaining gas introduced and the resulting one or more gases are pumped out. During this process, it is necessary to ensure the cleanliness of the surfaces of the components in the vacuum chamber to prevent other particles from falling onto the wafer and contaminating it.

[0003] The wafer support pins used in the chemical vapor deposition vacuum chamber of wafer fabs are made of high-purity alumina ceramic. Currently, after cleaning by domestic manufacturers, there is a problem of chemical residue. Because high-purity alumina ceramic has a porous structure, chemical residue remains inside the ceramic after chemical cleaning. Existing cleaning processes can only clean the surface contaminants of the product, but cannot clean the chemical residue adsorbed in the pores inside the material. During use in wafer fabs, the chemical residues precipitate out and react with the generated gas to generate contaminant microparticles. These microparticles fall onto the wafer surface, contaminating the wafer and reducing wafer yield. In severe cases, it can lead to wafer scrap.

[0004] This application solves the above problems by removing chemical residues, thereby improving the process of reducing contamination caused by chemical residues in ejector pin components during wafer production. Summary of the Invention

[0005] The purpose of this invention is to solve the problem of contamination caused by chemical residues from the contact between the ejector pin components and the wafer during the chemical vapor deposition process.

[0006] The technical solution adopted in this invention is: A chemical residue removal process for high-purity alumina pin-type components, the process steps are as follows: 1) Incoming component inspection: Use a strong flashlight and magnifying glass to visually inspect the surface of the components for defects such as defects and cracks; 2) Component pretreatment: Wipe the entire surface with IPA to ensure that the component surface is free of fingerprints and sweat contaminants; 3) Component cleaning treatment: Immerse the component in low-frequency ultrasonic waves for 5-25 minutes; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 20-28KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥1MΩ at the overflow outlet. 4) Component cleaning: Immerse the components in medium-frequency ultrasonic waves for 5-25 minutes. During the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 28-40KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥2MΩ at the overflow outlet. 5) Component cleaning: Immerse the components in high-frequency ultrasonic waves for 5-25 minutes. During the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 132-168KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥4MΩ at the overflow outlet. 6) The components are placed in a tested oven to dry; 7) During the high-temperature baking process to 1000℃ and then cooling down to 60℃, the temperature control is as follows: 0-200℃ is a free temperature rise; The time required to reach 200-300℃ is 60-120 minutes; The time required to reach 300-400℃ is 60-120 minutes; The time required to reach 400-500℃ is 60-120 minutes; The time required to reach 500-600℃ is 60-120 minutes; The time required to reach 600-700℃ is 60-120 minutes; The time required to reach 700-800℃ is 60-120 minutes; The time required to reach 800-900℃ is 60-120 minutes; The time required to reach 900-1000℃ is 60-120 minutes; The time required to go from 1000℃ to 800℃ is 60-120 minutes; The time required to go from 800 to 600℃ is 60-120 minutes; The time required to go from 600 to 400℃ is 60-120 minutes; The time required to go from 400 to 200℃ is 60-120 minutes; 200-60℃ is for natural cooling; 8) After high-temperature baking, immerse the parts in high-frequency ultrasonic cleaning for 5-25 minutes; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 132-168KHz, dynamic overflow water volume: 6-18L / min, pure water resistance value ≥4MΩ at the overflow outlet, and environmental requirements: Class 100-10 cleanroom. 9) The components are dried in a tested oven. Environmental requirements: Class 100-10 cleanroom; 10) Vacuum-sealed and anti-static packaging for the final components.

[0007] The component described in 6) is placed in a tested oven for drying, and the oven is cleaned before drying. Oven cleaning steps: ① Wipe the inner liner and Teflon tooling with a lint-free cloth dampened with IPA; ② Wipe the inner liner and Teflon tooling with a lint-free cloth dampened with 2%-10% MOS grade nitric acid; ③ Wipe the inner liner and Teflon tooling with a lint-free cloth dampened with pure water.

[0008] After cleaning, the oven was inspected. The inspection steps were as follows: ① Prepare two brand-new silicon wafers from the same box. ② Remove one wafer and place it on a fixture inside the oven, labeling it wafer A. Use the other wafer as a reference wafer, leaving it in the box untouched, labeling it wafer B. ③ Turn on the oven and set the temperature to 105-150℃. Start timing when the oven temperature reaches 105℃ and bake for 2-4 hours. ④ Allow it to cool naturally to room temperature. Remove wafer A from the oven. ⑤ Package wafers A and B and inspect them. The residual chemical acid radicals on both wafers were found to be within 1.0 x 10⁻⁶ mm. -6 If the result is less than or equal to the power of 1, the oven is considered to have passed the inspection. If the oven fails the inspection, repeat the oven cleaning steps until the oven passes the inspection.

[0009] The advantages of this invention are: 1) Compared with existing cleaning processes, the addition of ultrasonic cleaning at different frequencies allows for more targeted removal of surface contaminants of different particle sizes from ceramic ejector pins.

[0010] 2) Compared with traditional cleaning, the addition of oven cleaning and inspection processes controls the cleanliness of the equipment's interior during cleaning and prevents residues from spreading into the components during baking, thus avoiding contamination of the components. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of the ejector pin component of the present invention.

[0012] Figure 2 This is a schematic diagram of the ejector pin component carrying the wafer in this invention. Detailed Implementation

[0013] The following is in conjunction with the appendix Figure 1-2 This invention is further described in detail below. A process for removing chemical residues from ejector pin components made of high-purity alumina material, hereinafter referred to as "components", is disclosed. The process flow is as follows: incoming inspection of ejector pin components → IPA wiping → low-frequency ultrasonic cleaning → medium-frequency ultrasonic cleaning → high-frequency ultrasonic cleaning → drying → high-temperature baking → high-frequency ultrasonic cleaning in a cleanroom → drying in a cleanroom oven → packaging of components.

[0014] The specific process steps are as follows: 1) Incoming component inspection: Use a strong flashlight and magnifying glass to visually inspect the surface of the components for defects such as missing parts or cracks; 2) Component pretreatment: Use IPA to wipe the entire surface to ensure that the component surface is free of fingerprints, sweat and other contaminants.

[0015] 3) Component cleaning: Immerse the component in low-frequency ultrasonic waves for 5-25 minutes or more; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 20-28KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥1MΩ at the overflow outlet. 4) Component cleaning: Immerse the components in medium-frequency ultrasonic waves for 5-25 minutes or more; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 28-40KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥2MΩ at the overflow outlet. 5) Component cleaning: Immerse the component in high-frequency ultrasonic waves for 5-25 minutes or more; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 132-168KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥4MΩ at the overflow outlet.

[0016] 6) The components are placed in a tested oven to dry; Oven cleaning steps: ① Wipe the inner liner and Teflon tooling with a lint-free cloth dipped in IPA; ② Wipe the inner liner and Teflon tooling with a lint-free cloth dipped in 2%-10% MOS grade nitric acid; ③ Wipe the inner liner and Teflon tooling with a lint-free cloth dipped in pure water. Oven testing steps: ① Prepare two brand-new silicon wafers from the same box. ② Take one wafer and place it on the fixture inside the oven, labeling it wafer A. Leave the other wafer as a reference wafer in the box without any operation, labeling it wafer B. ③ Turn on the oven and set the temperature to 105-150℃. Start timing when the oven temperature reaches 105℃ and bake for 2-4 hours. ④ Allow it to cool naturally to room temperature. Remove wafer A from the oven. ⑤ Package wafers A and B and test them. The residual chemical acid radicals on both wafers should be within 1.0 x 10⁻⁶ mm. -6 If the result is less than or equal to the power of the power, the oven is considered to have passed the inspection. If the oven fails the inspection, repeat the oven cleaning steps until the oven passes the inspection. 7) During the high-temperature baking process to 1000℃ and then cooling down to 60℃, the temperature control is as follows: 0-200℃ is a free temperature rise; The time required to reach 200-300℃ is 60-120 minutes; The time required to reach 300-400℃ is 60-120 minutes; The time required to reach 400-500℃ is 60-120 minutes; The time required to reach 500℃ is 60-120 minutes; The time required to reach 500-600℃ is 60-120 minutes; The time required to reach 600-700℃ is 60-120 minutes; The time required to reach 700-800℃ is 60-120 minutes; The time required to reach 800-800℃ is 60-120 minutes; The time required to reach 800-900℃ is 60-120 minutes; The time required to reach 900-1000℃ is 60-120 minutes; The time required to reach 1000℃ is 120-180 minutes; The time required to go from 1000℃ to 800℃ is 60-120 minutes; The time required to go from 800 to 600℃ is 60-120 minutes; The time required to go from 600 to 400℃ is 60-120 minutes; The time required to go from 400 to 200℃ is 60-120 minutes; 200-60℃ is for natural cooling; 8) After high-temperature baking, immerse the parts in high-frequency ultrasonic cleaning for 5-25 minutes or more; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 132-168KHz, dynamic overflow water volume: 6-18L / min, pure water resistance value ≥4MΩ at the overflow outlet, and environmental requirements: Class 100-10 cleanroom. 9) The components are placed in a tested oven to dry; Environmental requirements: Class 100-10 cleanroom; Oven cleaning steps: ① Wipe the inner liner and Teflon tooling with a lint-free cloth dipped in IPA; ② Wipe the inner liner and Teflon tooling with a lint-free cloth dipped in 2% MOS grade nitric acid; ③ Wipe the inner liner and Teflon tooling with a lint-free cloth dipped in pure water. Oven testing steps: ① Prepare two brand-new silicon wafers from the same box. ② Take one wafer and place it on the fixture inside the oven, labeling it wafer A. Leave the other wafer as a reference wafer in the box without any operation, labeling it wafer B. ③ Turn on the oven and set the temperature to 150-180℃. Start timing when the oven temperature reaches the set value and bake for 2-5 hours. ④ Allow it to cool naturally to room temperature. Remove wafer A from the oven. ⑤ Package wafers A and B and test them. The residual chemical acid radicals on both wafers should be within 1.0 x 10⁻⁶ mm. -9 If the result is less than or equal to the power of 1, the oven is considered to have passed the inspection. If the oven fails the inspection, repeat the oven cleaning steps until the oven passes the inspection.

[0017] 10) Vacuum-sealed and anti-static packaging for the final components.

[0018] A three-pin assembly is used to carry the wafer and realize the transfer of the wafer.

Claims

1. A chemical residue removal process for high-purity alumina pin-like components, characterized in that, The process steps are as follows: 1) Incoming component inspection: Use a strong flashlight and magnifying glass to visually inspect the surface of the components for defects such as defects and cracks; 2) Component pretreatment: Wipe the entire surface with IPA to ensure that the component surface is free of fingerprints and sweat contaminants; 3) Component cleaning treatment: Immerse the component in low-frequency ultrasonic waves for 5-25 minutes; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 20-28KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥1MΩ at the overflow outlet. 4) Component cleaning: Immerse the components in medium-frequency ultrasonic waves for 5-25 minutes. During the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 28-40KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥2MΩ at the overflow outlet. 5) Component cleaning: Immerse the components in high-frequency ultrasonic waves for 5-25 minutes. During the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 132-168KHz, dynamic overflow water volume: 6-18L / min, and pure water resistance value ≥4MΩ at the overflow outlet. 6) The components are placed in a tested oven to dry; 7) During the high-temperature baking process to 1000℃ and then cooling down to 60℃, the temperature control is as follows: 0-200℃ is a free temperature rise; The time required to reach 200-300℃ is 60-120 minutes; The time required to reach 300-400℃ is 60-120 minutes; The time required to reach 400-500℃ is 60-120 minutes; The time required to reach 500-600℃ is 60-120 minutes; The time required to reach 600-700℃ is 60-120 minutes; The time required to reach 700-800℃ is 60-120 minutes; The time required to reach 800-900℃ is 60-120 minutes; The time required to reach 900-1000℃ is 60-120 minutes; The time required to go from 1000℃ to 800℃ is 60-120 minutes; The time required to go from 800 to 600℃ is 60-120 minutes; The time required to go from 600 to 400℃ is 60-120 minutes; The time required to go from 400 to 200℃ is 60-120 minutes; 200-60℃ is for natural cooling; 8) After high-temperature baking, immerse the parts in high-frequency ultrasonic cleaning for 5-25 minutes; during the cleaning process, turn on the dynamic pure water overflow. The cleaning parameters are: ultrasonic frequency: 132-168KHz, dynamic overflow water volume: 6-18L / min, pure water resistance value ≥4MΩ at the overflow outlet, and environmental requirements: Class 100-10 cleanroom. 9) The components are dried in a tested oven. Environmental requirements: Class 100-10 cleanroom; 10) Vacuum-sealed and anti-static packaging for the final components.

2. The chemical residue removal process for high-purity alumina pin-like components according to claim 1, characterized in that, The component described in 6) is placed in a tested oven for drying, and the oven is cleaned before drying. Oven cleaning steps: ① Wipe the inner liner and Teflon tooling with a lint-free cloth dampened with IPA; ② Wipe the inner liner and Teflon tooling with a lint-free cloth dampened with 2%-10% MOS grade nitric acid; ③ Wipe the inner liner and Teflon tooling with a lint-free cloth dampened with pure water.

3. The chemical residue removal process for high-purity alumina pin-like components according to claim 2, characterized in that, After cleaning, the oven was inspected. The inspection steps were as follows: ① Prepare two brand-new silicon wafers from the same box. ② Take out one wafer and place it on the fixture inside the oven, labeling it wafer A. The other wafer was used as a reference wafer and left untouched in the box, labeled B. ③ Turn on the oven and set the temperature to 105-150℃. Start timing when the oven temperature reaches 105℃ and bake for 2-4 hours. ④ Allow it to cool naturally to room temperature. Remove wafer A from the oven. ⑤ Package wafers A and B and inspect them. The chemical acid residue on both wafers was within 1.0 x 10 mm. -6 If the result is less than or equal to the power of 1, the oven is considered to have passed the inspection. If the oven fails the inspection, repeat the oven cleaning steps until the oven passes the inspection.

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