一种大尺寸碳化硅晶片抛光方法

By improving the design of the diamond dressing block and ceramic disk in the silicon carbide wafer polishing device, and combining it with segmented polishing parameters, the problems of reduced polishing rate and uneven quality in the polishing of large-size silicon carbide wafers were solved, achieving efficient and low-cost polishing processing.

CN118003235BActive Publication Date: 2026-07-17JIANGXI ZHAO CHI SEMICON CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
JIANGXI ZHAO CHI SEMICON CO LTD
Filing Date
2024-01-09
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing silicon carbide wafer polishing technology suffers from problems such as polishing pad deformation, decreased polishing rate, low equipment utilization, high material cost, frequent equipment failures, and uneven polishing quality, which are particularly pronounced in the processing of large-size wafers.

Method used

The design employs a distributed diamond dressing block and a single ceramic disc, combined with segmented polishing parameters, to improve the structure and process of the polishing device. This includes a ring-shaped distribution of diamond dressing blocks and ceramic uniform liquid blocks, reducing downtime for dressing and improving polishing efficiency and quality.

Benefits of technology

It improves the polishing removal rate, reduces polishing pad wear and material costs, shortens the production cycle, and enhances the consistency of polishing quality and equipment efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

本发明提供了一种大尺寸碳化硅晶片抛光装置及抛光方法,抛光装置包括:抛光盘、设于抛光盘上盘面上的抛光垫以及第一驱动轴,抛光垫上方设有若干呈环形分布的陶瓷盘,陶瓷盘与抛光垫之间设有抛光间隙;陶瓷盘上方设有压力盘,压力盘上设有第二驱动轴,压力盘外圆周表面滑动设有活动环,活动环下方设有若干呈环形间隔分布的钻石修整块,相邻两钻石修整块之间设有若干陶瓷匀液块,本发明减少了停机修整时间,在整个抛光过程中都能保持抛光垫表面的粗糙度,大幅提高了抛光移除速率,并减少了钻石修整块的压力,抛光垫磨损较少,提高产能效率的同时减少了抛光垫材料成本。
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