Amorphous gallium oxide film, preparation method and application thereof

Abstract

The application discloses an amorphous gallium oxide film and a preparation method and application thereof, and belongs to the technical field of gallium oxide films. The preparation of the amorphous gallium oxide film comprises the following steps: depositing metal organic sources and oxygen sources on the surface of a substrate by a metal organic chemical vapor deposition method to form an amorphous gallium oxide film on the surface of the substrate. The method is simple, easy to operate, good in repeatability and suitable for industrial mass production. The amorphous gallium oxide film prepared by the method has good thermal stability and uniformity, has an absorption effect from solar blind ultraviolet to visible light, and can be used for preparing a wideband photodetector.

Description

Technical Field

[0001] This invention relates to the field of gallium oxide thin film technology, and more specifically, to an amorphous gallium oxide thin film, its preparation method, and its application. Background Technology

[0002] Broadband photodetectors are crucial for both military and civilian applications. Metal oxides, due to their ease of synthesis, low cost, and good stability, have been widely studied and used in photodetectors. Amorphous gallium oxide is commonly used to fabricate solar-blind ultraviolet (UV) detectors. Since UV light with wavelengths in the 220–280 nm range is completely absorbed by the atmospheric ozone layer, this wavelength band is almost entirely absent from the Earth's surface, hence the term "solar-blind UV." Currently, amorphous gallium oxide is difficult to apply in broadband photodetectors.

[0003] In view of this, the present invention is proposed. Summary of the Invention

[0004] The purpose of this invention is to provide an amorphous gallium oxide thin film, its preparation method, and its application to solve or improve the above-mentioned technical problems.

[0005] This application can be implemented as follows:

[0006] In a first aspect, this application provides a method for preparing an amorphous gallium oxide thin film, which includes the following steps: depositing a metal-organic source and an oxygen source on the surface of a substrate by metal-organic chemical vapor deposition to form an amorphous gallium oxide thin film on the substrate surface.

[0007] In an optional embodiment, the organometallic source includes at least one of trimethylgallium and triethylgallium;

[0008] And / or, the oxygen source includes at least one of oxygen, water and nitrous oxide.

[0009] In an optional implementation, the carrier gas for the metal-organic source and the oxygen source is independently nitrogen or argon.

[0010] In an optional implementation, during the deposition process, the molar ratio of oxygen atoms in the oxygen source to gallium atoms in the metal-organic source does not exceed 600:1.

[0011] In an optional implementation, the flow rate of the carrier gas of the metal-organic source is at least 1.5 times the flow rate of the carrier of the oxygen source.

[0012] In an optional embodiment, the deposition temperature is 700℃~850℃, the deposition pressure is 40mbar~100mbar, and the deposition time is 0.5h~10h.

[0013] Secondly, this application provides an amorphous gallium oxide thin film, which is prepared by any of the preparation methods described in the foregoing embodiments.

[0014] In an optional embodiment, the amorphous gallium oxide thin film has the chemical formula Ga2O. x Where 1≤x≤1.2, the gallium oxide film is amorphous and the light absorption range of the gallium oxide film is from ultraviolet to visible light.

[0015] In an optional embodiment, the amorphous gallium oxide thin film further has at least one of the following characteristics:

[0016] Feature 1: The amorphous gallium oxide thin film contains at least 90 wt% Ga2O;

[0017] Feature 2: The light absorption range of amorphous gallium oxide thin films is 200nm to 400nm;

[0018] Feature 3: The light absorption rate of the amorphous gallium oxide thin film is not less than 50%;

[0019] Feature 4: The thickness of the amorphous gallium oxide film is 2μm to 10μm.

[0020] In an optional embodiment, the thickness of the substrate is 200 μm to 1000 μm.

[0021] In optional embodiments, the substrate includes a silicon substrate, a sapphire substrate, a gallium oxide substrate, a gallium oxide epitaxial wafer, a quartz substrate, a glass substrate, or an ITO substrate.

[0022] In an optional implementation, the substrate is a wafer with a diameter of 2 inches to 8 inches.

[0023] In an optional embodiment, the amorphous gallium oxide film also contains dopants.

[0024] In an optional embodiment, the dopant element in the dopant includes at least one selected from boron, aluminum, indium, tin, silicon, germanium, magnesium, calcium, iron, copper, zinc, nitrogen, hydrogen, and chlorine.

[0025] In an optional embodiment, the doping concentration of the dopant in the amorphous gallium oxide thin film is 1 × 10⁻⁶. 16 cm -3 ~1×10 20 cm -3 .

[0026] Thirdly, this application provides an application of an amorphous gallium oxide thin film as described in any of the foregoing embodiments in semiconductor power devices or semiconductor optoelectronic devices.

[0027] Fourthly, this application provides a detector comprising an amorphous gallium oxide thin film according to any of the foregoing embodiments.

[0028] The beneficial effects of this application include:

[0029] This application describes a method for depositing a metal-organic source and an oxygen source onto a substrate surface using metal-organic chemical vapor deposition (MOCVD) to form an amorphous gallium oxide thin film. This method is simple, easy to operate, and has good repeatability, making it suitable for industrial mass production. The amorphous gallium oxide thin film prepared by this method exhibits good thermal stability and uniformity, and possesses absorption capabilities from solar-blind ultraviolet to visible light, making it suitable for fabricating broadband photodetectors. Attached Figure Description

[0030] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 The image shows the UV-Vis spectral characterization results of the amorphous gallium oxide thin film epitaxial wafer in Example 1.

[0032] Figure 2 The image shows the X-ray fluorescence spectrometry results of the Ga 3d orbitals corresponding to the amorphous gallium oxide thin film epitaxial wafers in Example 1 and Comparative Example 1.

[0033] Figure 3 The image shows the X-ray fluorescence spectra of the Ga 2p 2 / 3 orbitals corresponding to the amorphous gallium oxide thin film epitaxial wafers in Example 1 and Comparative Example 1.

[0034] Figure 4 The image shows the UV-Vis spectral characterization results of the amorphous gallium oxide thin film epitaxial wafer in Comparative Example 1. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0036] The following provides a detailed description of the amorphous gallium oxide thin film, its preparation method, and its applications provided in this application.

[0037] This application proposes a method for preparing an amorphous gallium oxide thin film, which includes the following steps: depositing a metal-organic source and an oxygen source on the substrate surface by metal-organic chemical vapor deposition to form an amorphous gallium oxide thin film on the substrate surface.

[0038] The aforementioned substrate may include, for example, a silicon substrate, a sapphire substrate, a gallium oxide substrate, a gallium oxide epitaxial wafer, a quartz substrate, a glass substrate, or an ITO substrate. In some typical embodiments, the substrate is a wafer with a diameter of 2 inches to 8 inches (e.g., 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 7 inches, or 8 inches).

[0039] The thickness of the substrate can be 200μm to 1000μm, such as 200μm, 300μm, 400μm, 500μm, 600μm, 700μm, 800μm, 900μm or 1000μm, or any other value within the range of 200μm to 1000μm.

[0040] For reference, the metal-organic source may include, for example, at least one of trimethylgallium and triethylgallium, and the carrier gas used for the metal-organic source may be nitrogen or argon.

[0041] The oxygen source may include, for example, at least one of oxygen, water, and nitrous oxide. The carrier gas used for the oxygen source may also be nitrogen or argon.

[0042] During the above deposition process, the molar ratio of oxygen atoms in the oxygen source to gallium atoms in the metal-organic source does not exceed 600:1, such as 600:1, 550:1, 500:1, 450:1, 400:1, 350:1, 300:1, 250:1, 200:1, 150:1 or 100:1, or other values ​​within the range not exceeding 600:1.

[0043] If the molar ratio of oxygen atoms in the oxygen source to gallium atoms in the organometallic source exceeds 600:1 (e.g., 650:1), it can easily lead to Ga2O x In the thin film, x>1.2, thus forming Ga2O with a content of <90wt%.

[0044] In some embodiments, the flow rate of the carrier gas of the metal-organic source is at least 1.5 times that of the carrier gas of the oxygen source, such as 1.5 times, 2 times, 2.5 times, 3 times, 3.5 times, or 4 times.

[0045] If the flow rate of the carrier gas of the metal-organic source is less than 1.5 times that of the carrier gas of the oxygen source, the gallium precursor is more likely to decompose earlier than the oxygen precursor, which is not conducive to the formation of Ga2O.

[0046] In this application, the deposition temperature can be 700℃~850℃, such as 700℃, 720℃, 750℃, 780℃, 800℃, 820℃ or 850℃, or any other value within the range of 700℃~850℃.

[0047] If the deposition temperature is below 700℃, the product is likely to contain a large amount of carbon impurities from the gallium precursor; if the deposition temperature is above 850℃, the gallium in the gallium oxide film is likely to be mainly trivalent gallium, and its corresponding light absorption range is mainly from the solar blind ultraviolet band to the ultraviolet band, and cannot reach the visible light band.

[0048] The deposition pressure can be 40 mbar to 100 mbar, such as 40 mbar, 50 mbar, 60 mbar, 70 mbar, 80 mbar, 90 mbar or 100 mbar, or any other value in the range of 40 mbar to 100 mbar.

[0049] If the deposition pressure is less than 40 mbar, it is easy to cause insufficient gas flow, which will affect the overall growth gas flow field; if the deposition pressure is greater than 100 mbar, it is easy to cause the pre-reaction to be too intense, which will affect the deposition rate.

[0050] The deposition time can be 0.5h to 10h, such as 0.5h, 1h, 2h, 3h, 4h, 5h, 6h, 7h, 8h, 9h or 10h, or any other value within the range of 0.5h to 10h.

[0051] If the deposition time is less than 0.5 hours, the film is likely to be too thin; if the deposition time is more than 10 hours, the film is likely to be too thick, and the accumulated stress will lead to a rough surface.

[0052] Preferably, the substrate is pretreated before deposition, such as by cleaning. It should be noted that the pretreatment methods and processes for the substrate can refer to relevant existing technologies, and will not be elaborated on here.

[0053] As a reference, after deposition is completed, the metal-organic source should be stopped, and the temperature should be lowered to room temperature in an oxygen, nitrogen, or argon atmosphere.

[0054] In this application, the thickness of the amorphous gallium oxide thin film can be 2μm to 10μm, such as 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm or 10μm, or any other value in the range of 2μm to 10μm.

[0055] As mentioned above, this application uses metal-organic chemical vapor deposition (MOCVD) technology to prepare amorphous gallium oxide thin films, which can grow films with good thermal stability and ensure good uniformity and repeatability, making them suitable for mass production.

[0056] Accordingly, this application also provides an amorphous gallium oxide thin film, which is prepared by the above-described preparation method.

[0057] The amorphous gallium oxide thin film provided in this application has the chemical formula Ga2O. xWhere 1≤x≤1.2, the gallium oxide film is amorphous and the light absorption range of the gallium oxide film is from ultraviolet to visible light.

[0058] In the aforementioned amorphous gallium oxide thin film, at least 90 wt% of the composition is Ga2O, and the balance includes Ga2O3 and other gallium oxides in different valence states.

[0059] Amorphous gallium oxide thin films containing the above-mentioned proportion of Ga2O can have a broad absorption spectrum, the absorption range of which can include solar-blind ultraviolet to visible light (approximately 200nm-400nm), and the absorbance is not less than 50%.

[0060] In some embodiments, the amorphous gallium oxide thin film described above may further contain a dopant. Exemplarily, the dopant element may include at least one selected from boron, aluminum, indium, tin, silicon, germanium, magnesium, calcium, iron, copper, zinc, nitrogen, hydrogen, and chlorine. The doping amount of the dopant in the amorphous gallium oxide thin film may be 1 × 10⁻⁶. 16 cm -3 ~1×10 20 cm -3 , such as 1×10 16 cm -3 1×10 17 cm -3 1×10 18 cm -3 1×10 19 cm -3 Or 1×10 20 cm -3 wait.

[0061] By doping with dopants, amorphous gallium oxide thin films can have various other effects.

[0062] In addition, this application also provides the application of the above-mentioned amorphous gallium oxide thin film in semiconductor power devices or semiconductor optoelectronic devices.

[0063] Accordingly, this application also provides a detector comprising the aforementioned amorphous gallium oxide thin film. The application range of this detector is not limited to the solar-blind range, but can be extended to the visible light range.

[0064] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0065] Example 1

[0066] This embodiment provides an amorphous gallium oxide thin film, the preparation method of which includes:

[0067] S1: Select a two-inch c-plane sapphire substrate (thickness 430μm), clean and dry it, and then place it into the MOCVD reactor;

[0068] S2: Heat the reactor to 800℃ and adjust the pressure to 50mbar. Continuously introduce argon gas as a carrier gas into both the gallium source pipeline and the oxygen source pipeline. Maintain the argon gas flow rate in the gallium source pipeline at 10L / min and the argon gas flow rate in the oxygen source pipeline at 5L / min for 1 minute.

[0069] S3: High-purity oxygen at a rate of 0.11 mol / min is introduced through the oxygen source pipeline, and 3.7 × 10⁻⁶ mol / min high-purity oxygen is introduced through the gallium source pipeline. - 4 The concentration of trimethylgallium was mol / min, at which point the molar ratio of oxygen atoms to gallium atoms in the trimethylgallium molecule was approximately 600:1, and this was maintained for 1 hour.

[0070] S4: Stop the flow of trimethylgallium, cool to room temperature in an oxygen and argon atmosphere, and remove the epitaxial wafer (432μm thick) with an amorphous gallium oxide thin film (2μm thick).

[0071] The amorphous gallium oxide thin film epitaxial wafer prepared in this embodiment was characterized by ultraviolet-visible spectroscopy, and the results are as follows: Figure 1 As shown. By Figure 1 It can be seen that the light absorption range of this amorphous gallium oxide thin film epitaxial wafer is about 200nm to 500nm, that is, from the solar blind ultraviolet band to the green visible light band, and the optical band gap is about 3eV.

[0072] X-ray fluorescence spectroscopy analysis was performed on the amorphous gallium oxide thin film epitaxial wafer prepared in this embodiment. The orbitals were Ga 2p 2 / 3 orbitals and Ga 3d orbitals. The results are as follows: Figure 2 The image at the top and Figure 3 The image above is in the middle. (By...) Figure 2 and Figure 3 It can be seen that the valence state of gallium in amorphous gallium oxide thin films is mainly +1.

[0073] Example 2

[0074] This embodiment provides an amorphous gallium oxide thin film, the preparation method of which includes:

[0075] S1: A 4-inch c-plane sapphire substrate (thickness 630μm) is selected, cleaned, dried, and then placed into the MOCVD reactor;

[0076] S2: Heat the reactor to 700℃ and adjust the pressure to 40mbar. Continuously introduce argon gas as a carrier gas into both the gallium source pipeline and the oxygen source pipeline. Maintain the argon gas flow rate in the gallium source pipeline at 10L / min and the argon gas flow rate in the oxygen source pipeline at 3L / min for 1 minute.

[0077] S3: High-purity oxygen at a rate of 0.11 mol / min is introduced through the oxygen source pipeline, and 7.3 × 10⁻⁶ mol / min is introduced through the gallium source pipeline. - 4 The concentration of trimethylgallium was mol / min, at which point the molar ratio of oxygen atoms to gallium atoms in the trimethylgallium molecule was approximately 300:1, and this was maintained for 0.5 hours.

[0078] S4: Stop the flow of trimethylgallium, cool to room temperature in an oxygen and argon atmosphere, and remove the epitaxial wafer (632μm thick) with an amorphous gallium oxide thin film (2μm thick).

[0079] Example 3

[0080] This embodiment provides an amorphous gallium oxide thin film, the preparation method of which includes:

[0081] S1: A 2-inch c-plane sapphire substrate (430μm thick) is selected, cleaned, dried, and then placed into the MOCVD reactor;

[0082] S2: Heat the reactor to 850℃ and adjust the pressure to 100mbar. Continuously introduce argon gas as a carrier gas into both the gallium source pipeline and the oxygen source pipeline. Maintain the argon gas flow rate in the gallium source pipeline at 12L / min and the argon gas flow rate in the oxygen source pipeline at 5L / min for 1 minute.

[0083] S3: High-purity oxygen at a rate of 0.11 mol / min is introduced through the oxygen source pipeline, and 5.5 × 10⁻⁶ mol / min of high-purity oxygen is introduced through the gallium source pipeline. - 4 The concentration of trimethylgallium was mol / min, at which point the molar ratio of oxygen atoms to gallium atoms in the trimethylgallium molecule was approximately 400:1, and this was maintained for 10 hours.

[0084] S4: Stop the flow of trimethylgallium, cool to room temperature in an oxygen and nitrogen atmosphere, and remove the epitaxial wafer (440μm thick) with an amorphous gallium oxide film (10μm thick).

[0085] Example 4

[0086] The difference between this embodiment and Embodiment 1 is that the organometallic source is triethylgallium.

[0087] Example 5

[0088] The difference between this embodiment and Embodiment 1 is that the oxygen source is water.

[0089] Example 6

[0090] The difference between this embodiment and Embodiment 1 is that the oxygen source is nitrous oxide.

[0091] Example 7

[0092] The difference between this embodiment and Embodiment 1 is that the amorphous gallium oxide thin film is also doped with silicon, with a doping amount of 9.9 × 10⁻⁶. 19 cm -3 The corresponding addition steps and conditions are as follows: In step S3, while adding oxygen and gallium, 3 × 10⁻⁶ g / L gallium is added. -6 Silane gas at a flow rate of mol / min.

[0093] Example 8

[0094] The difference between this embodiment and Embodiment 1 is that the substrate is a silicon substrate.

[0095] Comparative Example 1

[0096] This comparative example provides an amorphous gallium oxide thin film, the preparation method of which includes:

[0097] S1: Select a c-plane sapphire substrate, clean and dry it, and then place it into the MOCVD reactor;

[0098] S2: Heat the reactor to 900℃ and adjust the pressure to 50mbar. Continuously introduce argon gas as a carrier gas into both the gallium source pipeline and the oxygen source pipeline. Maintain the argon gas flow rate in the gallium source pipeline at 15L / min and the argon gas flow rate in the oxygen source pipeline at 15L / min for 1 minute.

[0099] S3: High-purity oxygen at a rate of 0.22 mol / min is introduced through the oxygen source pipeline, and 2.3 × 10⁻⁶ mol / min of high-purity oxygen is introduced through the gallium source pipeline. - 4 The concentration of trimethylgallium was mol / min, at which point the molar ratio of oxygen atoms to gallium atoms in the trimethylgallium molecule was approximately 970:1, and this was maintained for 1 hour.

[0100] S4: Stop the flow of trimethylgallium, cool to room temperature in an oxygen and argon atmosphere, and remove the epitaxial wafer with the amorphous gallium oxide thin film grown on it.

[0101] The amorphous gallium oxide thin film epitaxial wafers prepared in this comparative example were characterized by ultraviolet-visible spectroscopy, and the results are as follows: Figure 4 As shown. By Figure 4 It can be seen that the light absorption range of this amorphous gallium oxide thin film epitaxial wafer is about 200nm to 300nm, that is, from the solar blind ultraviolet band to the ultraviolet band, and the optical band gap is above 4.38eV.

[0102] X-ray fluorescence spectroscopy analysis was performed on the amorphous gallium oxide thin film epitaxial wafer prepared in this comparative example. The orbitals were Ga 2p 2 / 3 orbitals and Ga 3d orbitals. The results are as follows: Figure 2 The image below and Figure 3 The image below is shown in the middle. (By...) Figure 2 and Figure 3 It can be seen that the valence state of gallium in amorphous gallium oxide thin films is mainly +3.

[0103] Comparative Example 2

[0104] The difference between this comparative example and Example 1 is that the deposition temperature is 600°C.

[0105] The gallium oxide film deposited in this comparative example has a high carbon impurity content, resulting in the film being insulating.

[0106] Comparative Example 3

[0107] The difference between this comparative example and Example 1 is that the deposition temperature is 900°C.

[0108] In the comparative example, the gallium oxide film deposited in this film is mostly trivalent, resulting in a narrow absorption spectrum range.

[0109] Comparative Example 4

[0110] The difference between this comparative example and Example 1 is that the deposition pressure is 30 mbar.

[0111] The surface uniformity of the gallium oxide thin film deposited in this comparative example is <95%.

[0112] Comparative Example 5

[0113] The difference between this comparative example and Example 1 is that the deposition pressure is 120 mbar.

[0114] The thickness of the gallium oxide film deposited in this comparative example is <1 μm.

[0115] Comparative Example 6

[0116] The difference between this comparative example and Example 1 is that the deposition time is 0.2 h.

[0117] The thickness of the gallium oxide film deposited in this comparative example is 0.4 μm.

[0118] Comparative Example 7

[0119] The difference between this comparative example and Example 1 is that the deposition time is 12 hours.

[0120] The surface roughness of the gallium oxide thin film deposited in this comparative example has a root mean square error > 1 nm.

[0121] Comparative Example 8

[0122] The difference between this comparative example and Example 1 is that, during the deposition process, the molar ratio of oxygen atoms in the oxygen source to gallium atoms in the organometallic source is 650:1.

[0123] The Ga2O content in the gallium oxide thin film obtained in this comparative example is <90wt%.

[0124] Comparative Example 9

[0125] The difference between this comparative example and Example 1 is that: the amorphous gallium oxide thin film was prepared by magnetron sputtering, and the specific process conditions included: using 99.99% pure Ga2O3 ceramic as the target material, at a speed of 1×10⁻⁶... -4 Sputtering was performed at a pressure of Pa and a temperature of 400 degrees Celsius. Unlike Example 1, the film obtained in this comparative example was primarily amorphous Ga2O3, which transformed into crystalline Ga2O3 after annealing at temperatures above 700 degrees Celsius. It lacks good thermal stability. Furthermore, its growth rate and uniformity are generally worse than those of metal-organic chemical vapor deposition.

[0126] In summary, this application describes a method for forming an amorphous gallium oxide thin film on a substrate surface by depositing a metal-organic source and an oxygen source onto the substrate surface using metal-organic chemical vapor deposition (MOCVD). This method is simple, easy to operate, has good repeatability, and is suitable for industrial mass production. The amorphous gallium oxide thin film prepared by this method exhibits good thermal stability and uniformity, and possesses absorption effects from solar-blind ultraviolet to visible light, making it suitable for fabricating broadband photodetectors.

[0127] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for preparing an amorphous gallium oxide thin film, characterized in that, Includes the following steps: A metal-organic source and an oxygen source are deposited on the substrate surface by metal-organic chemical vapor deposition to form an amorphous gallium oxide thin film on the substrate surface. The molar ratio of oxygen atoms in the oxygen source to gallium atoms in the metal-organic source does not exceed 600:1; the flow rate of the carrier gas of the metal-organic source is at least 1.5 times the flow rate of the oxygen source carrier; the deposition temperature is 700℃~850℃, the deposition pressure is 40mbar~100mbar, and the deposition time is 0.5h~10h. The chemical formula of the amorphous gallium oxide thin film is Ga2O. x Wherein, 1≤x≤1.2, the gallium oxide thin film is amorphous and the light absorption range of the gallium oxide thin film is from ultraviolet to visible light; the amorphous gallium oxide thin film contains at least 90wt% Ga2O; the light absorption range of the amorphous gallium oxide thin film is 200nm~400nm; the light absorption rate of the amorphous gallium oxide thin film is not less than 50%.

2. The preparation method according to claim 1, characterized in that, The organometallic source includes at least one of trimethylgallium and triethylgallium; And / or, the oxygen source includes at least one of oxygen, water and nitrous oxide.

3. The preparation method according to claim 2, characterized in that, The carrier gas for both the metal-organic source and the oxygen source is independently nitrogen or argon.

4. An amorphous gallium oxide thin film, characterized in that, It is prepared by the preparation method according to any one of claims 1 to 3.

5. The amorphous gallium oxide thin film according to claim 4, characterized in that, The thickness of the amorphous gallium oxide thin film is 2μm~10μm.

6. The amorphous gallium oxide thin film according to claim 4, characterized in that, The thickness of the substrate is 200μm to 1000μm.

7. The amorphous gallium oxide thin film according to claim 6, characterized in that, The substrate includes a silicon substrate, a sapphire substrate, a gallium oxide substrate, a gallium oxide epitaxial wafer, a quartz substrate, a glass substrate, or an ITO substrate.

8. The amorphous gallium oxide thin film according to claim 6, characterized in that, The substrate is a wafer with a diameter of 2 inches to 8 inches.

9. The amorphous gallium oxide thin film according to any one of claims 4 to 8, characterized in that, The amorphous gallium oxide thin film also contains dopants.

10. The amorphous gallium oxide thin film according to claim 9, characterized in that, The dopant element in the dopant includes at least one of boron, aluminum, indium, tin, silicon, germanium, magnesium, calcium, iron, copper, zinc, nitrogen, hydrogen, and chlorine.

11. The amorphous gallium oxide thin film according to claim 10, characterized in that, The dopant concentration in the amorphous gallium oxide thin film is 1×10⁻⁶. 16 cm -3 ~1×10 20 cm -3 .

12. The application of an amorphous gallium oxide thin film as described in any one of claims 4 to 11 in semiconductor power devices or semiconductor optoelectronic devices.

13. A detector, characterized in that, The detector contains an amorphous gallium oxide thin film as described in any one of claims 4 to 11.

Images