Device for improving stability of ozone output pressure

Abstract

The application relates to the technical field of photovoltaic cell manufacturing, in particular to a device for improving the stability of ozone output pressure. The device is used for inputting ozone into an atomic layer deposition equipment, and the device comprises a gas supply main line connected at a furnace opening of the atomic layer deposition equipment and used for inputting low-pressure ozone gas, a gas supply branch line connected at a furnace side of the atomic layer deposition equipment and used for inputting high-pressure ozone gas, a main line back pressure valve arranged on the gas supply main line, a branch line back pressure valve arranged on the gas supply branch line, and the set pressure of the branch line back pressure valve is higher than that of the main line back pressure valve. The device adopts the back pressure valves to adjust the preset value of the upstream pressure, so that the ozone gas main line pressure is stably output, and the pressure control is accurate. Different back pressure valve set pressures can be set to realize the distribution of the gas flow between the gas supply main line and the gas supply branch line. In particular, the gas supply main line and the gas supply branch line can be set to realize uniform gas supply of the atomic layer deposition equipment.

Description

Technical Field

[0001] This invention belongs to the field of photovoltaic cell manufacturing technology, and in particular relates to a device for improving the stability of ozone output pressure. Background Technology

[0002] A solar photovoltaic (PV) cell is a device that converts solar energy into electrical energy. It utilizes the photovoltaic effect to directly convert sunlight into electricity. A PV cell typically consists of multiple thin sheets, each made of semiconductor material. When sunlight shines on a PV cell, photons interact with electrons in the semiconductor material, generating an electric current. The working principle of a PV cell can be simply summarized in the following steps: the energy of the photons is absorbed by the PV cell, releasing electrons from the semiconductor atoms. These released electrons form an electric current in the semiconductor, which is collected by a wire and then transmitted to the device that needs the electrical energy. The use of PV cells has many advantages. First, they are a clean and renewable form of energy, producing no harmful gases such as carbon dioxide. Second, PV cells can directly convert solar energy into electricity without the need for fuel, thus having lower operating costs. Furthermore, PV cells can be used on various scales, from small portable devices to large solar power plants.

[0003] The manufacturing process of solar photovoltaic (PV) cells begins with preparing the materials, primarily including silicon wafers, conductive backsheets, transparent conductive glass, and electrode materials. Silicon wafers are the most crucial material in PV cells and can be obtained through different fabrication methods, such as monocrystalline silicon, polycrystalline silicon, or amorphous silicon. In short, silicon wafers are the core component of solar PV cells, and their fabrication process includes steps such as cleaning and texturing, diffusion junction formation, etching, removal of phosphorus silicate glass, and electrode printing. The industrial-scale production of crystalline silicon solar cells has consistently focused on thinner wafers, reducing thickness from 400-450 μm in the 1970s to approximately 180 μm currently. Thinner crystalline silicon solar cells offer advantages such as improved photoelectric conversion efficiency, reduced costs, and increased flexibility and bendability. For factories, a direct benefit of reduced wafer thickness is cost savings.

[0004] Of course, for crystalline silicon solar cells, the silicon wafer thickness cannot be reduced indefinitely. According to Willeke's research, "provided that the cell has sufficiently good passivation and anti-reflection treatment, the optimal thickness of a crystalline silicon solar cell is around 50 μm." Therefore, an important prerequisite for reducing the silicon wafer thickness is excellent surface passivation. Whether the silicon wafer thickness can be successfully reduced and production costs lowered, passivation technology will be key.

[0005] Modern high-efficiency crystalline silicon solar cells typically employ advanced surface passivation techniques to reduce the surface activity of crystalline silicon and decrease the recombination rate. The main methods include reducing dangling bonds on the saturated crystalline silicon surface to decrease surface activity, or increasing surface cleaning processes to prevent the formation of recombination centers due to impurities introduced into the surface layer, thereby reducing the recombination rate of minority carriers on the crystalline silicon surface. Regardless of the passivation method used, the ultimate goal is to reduce surface defect states, prevent minority carrier recombination at defect sites, thereby increasing short-circuit current and improving cell efficiency.

[0006] Atomic layer deposition (ALD) is a common chemical vapor deposition method in the semiconductor field, but it is a novel manufacturing process in the fabrication of crystalline silicon solar cells. Due to the high controllability of ALD deposition parameters (thickness, composition, and structure), its excellent deposition uniformity and consistency result in high-quality films with few defects, making it highly suitable for high-efficiency solar cells with stringent surface quality requirements.

[0007] Alumina (Al₂O₃) has attracted widespread attention as a novel passivation material for crystalline silicon solar cells. It possesses the following advantages: First, its preparation temperature is very low, only around 200℃. This is significantly lower than the thermal oxidation method, which prepares SiO₂ films at around 1000℃, and the industrial-scale PECVD method, which prepares SiN at around 400℃. x First, its fabrication temperature meets the requirements for low energy consumption. Second, it has a high fixed negative charge density and a low interface defect density, achieving the dual effects of field-effect passivation and chemical passivation. Third, it has a wide range of applications; currently, it has achieved good passivation effects on both lightly and heavily doped, p-type and n-type crystalline silicon surfaces. Fourth, it is completely transparent to visible light and has good stability against ultraviolet light and thermal stability, making it particularly suitable as a cover layer for the illumination surface of solar cells.

[0008] Atomic Layer Deposition (ALD) is a vapor deposition technique based on chemisorption. Its reaction mainly consists of four steps and two "half-reactions": (1) Precursor A is carried by an inert gas and enters the reaction chamber in a pulsed manner. The substrate in the reaction chamber is exposed to the atmosphere of precursor A. Precursor A is attached to the substrate surface in the form of chemical adsorption until saturation, and new functional groups are formed on the surface.

[0009] (2) Inert gas enters the chamber to purge the reaction chamber and carry out the remaining unreacted precursor A and byproducts from the chamber, cleaning the reaction chamber and ending the first "half-reaction".

[0010] (3) Precursor B is carried by inert gas and enters the reaction chamber through a pulse, where it reacts chemically with the collective surface functional groups until the surface functional groups are completely saturated.

[0011] (4) The inert gas re-enters the chamber to purge the reaction chamber and carry out the remaining unreacted precursor B and byproducts from the chamber, cleaning the reaction chamber and ending the second "half-reaction".

[0012] For example, in an atomic layer deposition (ALD) process for passivating crystalline silicon with Al2O3, during one reaction cycle of thermal ALD and plasma ALD, trimethylaluminum (TMA) molecules first adsorb onto the silicon wafer surface via hydroxyl groups, attaching to the wafer surface. Then, these molecules are oxidized by ozone plasma (in the thermal ALD process), completing one reaction cycle. Because the ozone supply requires frequent switching between supply and exhaust during the ozone supply process, the ozone supply output pressure cannot maintain a stable value. This leads to inaccurate feedback signals from the mass flow controller, further resulting in poor uniformity of the silicon wafer coating thickness.

[0013] Therefore, there is a need for a device that can improve the stability of ozone output pressure during the ALD process. Summary of the Invention

[0014] The purpose of this invention is to provide a device for improving the stability of ozone output pressure. The device employs a back pressure valve to regulate a preset value of the upstream pressure, ensuring stable output pressure in the main ozone pipeline and precise pressure control.

[0015] The technical solution adopted by the present invention to solve the above problems is: a device for improving the stability of ozone output pressure, wherein the device is used to introduce ozone into an atomic layer deposition equipment, and the device includes: The main gas supply line is connected to the furnace inlet of the atomic layer deposition equipment for inputting low-pressure ozone gas; A gas supply branch is connected to the furnace side of the atomic layer deposition equipment for inputting high-pressure ozone gas; The main back pressure valve is installed on the main gas supply line; A branch back pressure valve is installed on the gas supply branch; The set pressure of the branch back pressure valve is higher than that of the main back pressure valve.

[0016] The atomic layer deposition equipment is a type of device used to provide a site for atomic layer deposition. In this application, atomic layer deposition equipment refers to a type of equipment in the prior art that allows the manufacture of nanoscale thin films with very uniform and controllable thickness by precisely controlling the sequence and time of chemical reactions, and is widely used in the semiconductor industry, nanotechnology, solar cell manufacturing and various coating technologies.

[0017] In this system, both the main gas supply line and the branch gas supply lines are special gas pipelines of the same or essentially the same specifications, or the main gas supply line is slightly larger than the branch gas supply lines. Special gas pipelines are pipeline systems specifically designed to transport special gases, such as ozone. Special gas pipelines differ from conventional gas pipelines primarily in their more stringent and specialized design and material selection. They are typically manufactured using high-purity materials to ensure the absence of impurities and contaminants within the pipeline, guaranteeing the purity and quality of the transported special gas. Common materials for special gas pipelines include stainless steel, copper, and aluminum, which possess corrosion resistance and high sealing properties, effectively preventing gas leaks and contamination.

[0018] Both the main back pressure valve and the branch back pressure valves are back pressure valves with different set pressures, and their operation is achieved through the elasticity of an internal spring: when the system pressure is lower than the set pressure, the diaphragm blocks the pipeline under the action of the spring; when the system pressure is higher than the set pressure, the diaphragm compresses the spring, the pipeline is opened, and liquid flows through the back pressure valve. The structure of the back pressure valve is similar to that of a check valve, but the opening pressure is greater than that of a check valve. The set pressure of the back pressure valve refers to the pressure value that the back pressure valve can reach by adjusting the opening degree of the back pressure valve or setting the adjustment parameters of the back pressure valve. This set pressure is usually determined according to the needs of the ozone supply system. The set pressure can be understood as the maximum back pressure value or back pressure range that the back pressure valve can provide, used to control the output pressure of the ozone supply system. By adjusting the opening degree of the back pressure valve, the magnitude of the back pressure provided by the back pressure valve can be adjusted, thereby affecting the output pressure of the ozone supply system. That is, the set pressure of the back pressure valve is not the actual pressure in the gas pipeline, but a set value that is controlled by adjusting the back pressure valve to control the actual pressure.

[0019] Specifically, by incorporating a main gas supply line and branch gas supply lines into the ozone supply system, uniform gas supply to the atomic layer deposition (ALD) equipment can be achieved. The main gas supply line connects to the furnace inlet of the ALD equipment, directly supplying ozone gas into the furnace to ensure a high ozone concentration. The branch gas supply lines connect to the furnace side of the ALD equipment, supplying ozone gas to the furnace side, resulting in a more uniform ozone distribution throughout the entire ALD equipment and avoiding localized concentration differences. Furthermore, by setting up both main and branch gas supply lines in the ALD equipment, the ozone diffusion effect can be improved. The ozone gas supplied by the main gas supply line enters the furnace directly, forming a localized high-concentration area, which is conducive to rapid diffusion and reaction. The ozone gas supplied by the branch gas supply lines enters from the furnace side, replenishing the ozone lost in the ALD equipment and maintaining a relatively stable ozone concentration. Even if there are pressure changes during ozone supply, the configuration of the main and branch gas supply lines can minimize the instability caused by these changes. Furthermore, setting up a main gas supply line and branch gas supply lines can improve the robustness of the ozone supply system. If either the main or branch gas supply line fails or requires maintenance, the ozone supply can be maintained by switching to another line. This prevents the entire ozone supply system from shutting down due to a single fault, thus improving the system's reliability and stability.

[0020] Specifically, the set pressure of the back pressure valve on the main gas supply line is lower than that on the branch gas supply lines. By setting different back pressure valve set pressures, the gas flow can be distributed between the main and branch gas supply lines. Because the back pressure valve set pressure on the main gas supply line is lower, the gas flow is more likely to reach the furnace inlet of the atomic layer deposition (ALD) equipment. Conversely, the back pressure valve set pressure on the branch gas supply lines is higher, allowing the gas flow to reach the furnace side of the ALD equipment more easily. This enables precise control and distribution of ozone gas to meet the needs of different areas within the ALD equipment. Setting different back pressure valve pressures optimizes ozone diffusion. The lower back pressure valve set pressure on the main gas supply line allows ozone to enter the furnace at a higher velocity, promoting rapid diffusion and reaction. The higher back pressure valve set pressure on the branch gas supply lines slows down the ozone gas flow to the furnace side, helping to maintain a more stable ozone concentration and thus optimizing diffusion.

[0021] A further preferred technical solution is that the gas supply branch includes a front gas supply branch and a rear gas supply branch, wherein the front gas supply branch is closer to the furnace opening than the rear gas supply branch.

[0022] A further preferred technical solution is that the branch back pressure valve includes a front branch back pressure valve disposed on the front gas supply branch and a rear branch back pressure valve disposed on the rear gas supply branch.

[0023] A further preferred technical solution is that the set pressure of the rear branch back pressure valve is higher than that of the front branch back pressure valve.

[0024] A further preferred technical solution is that the set pressure of the main back pressure valve is 10-12 psi.

[0025] A further preferred technical solution is that the set pressure of the branch back pressure valve is 13-20 psi.

[0026] A further preferred technical solution is that the set pressure of the front branch back pressure valve is 13-16 psi.

[0027] A further preferred technical solution is that the set pressure of the back pressure valve of the rear branch is 17-20 psi.

[0028] A further preferred technical solution is that the ratio of the vertical distance between the connection point of the front gas supply branch on the atomic layer deposition equipment and the furnace opening to the length of the furnace body of the atomic layer deposition equipment is 0.2~0.3.

[0029] A further preferred technical solution is that the ratio of the vertical distance between the connection point of the rear gas supply branch on the atomic layer deposition equipment and the furnace opening to the furnace length of the atomic layer deposition equipment is 0.4~0.6.

[0030] A further preferred technical solution is that: a flow stabilizing component is provided on the inner wall of the main gas supply line and / or the branch gas supply line; the flow stabilizing component includes a gas collection line, a guide gas line disposed at the inner end of the gas collection line, and a return gas line disposed at the end of the guide gas line.

[0031] The function of the collecting air path is to collect the airflow with unstable airflow direction in the main air supply path and / or the branch air supply path, and to enter the guiding air path. The extension direction of the guiding air path is consistent with the extension direction of the main air supply path and / or the branch air supply path. Finally, the airflow with stable direction returns to the main air supply path and / or the main air supply path along the return air path, thus ensuring the stability of the airflow in the pipe.

[0032] A further preferred technical solution is that the slope of the collecting gas path is greater than that of the return gas path.

[0033] The term "inclination" typically refers to the degree of inclination of a surface or line relative to a horizontal or vertical direction. In this application, the inclination refers to the angle between the collecting air path or the return air path and the inner wall of the pipe. The collecting air path has a larger inclination, ensuring that it only collects airflow whose direction differs significantly from the extension direction of the main supply air path and / or the branch supply air path, without affecting the airflow traveling normally within the main supply air path and / or the branch supply air path. The return air path has a smaller inclination, ensuring that the airflow returning to the main supply air path and / or the branch supply air path is in a direction substantially the same as its extension direction, thus achieving a stable airflow direction.

[0034] Due to the installation of back pressure valves on the main gas supply line and / or gas supply branches, the phenomenon of unstable airflow will increase compared to direct gas supply. The flow stabilization component helps to improve the stability of airflow, which can reduce pressure fluctuations and turbulence, so that the amount of gas entering the container remains constant, that is, the pressure inside the container can be more easily maintained within a set range.

[0035] In summary, the present invention has the following advantages: 1. Controlling airflow distribution: By setting different back pressure valves to set pressure, the airflow can be distributed between the main air supply line and the branch air supply line.

[0036] 2. Uniform gas supply: By setting up a main gas supply line and gas supply branches, uniform gas supply to the atomic layer deposition equipment can be achieved.

[0037] 3. Further adjustments were made to the connection positions of the main gas supply line and the branch gas supply line on the atomic layer deposition equipment to maximize the uniformity of gas supply to the atomic layer deposition equipment, thereby reducing the instability caused by changes in output pressure.

[0038] 4. By installing flow stabilizing components in the main and branch pipelines, in conjunction with back pressure valves, the stability of airflow can be further improved. Attached Figure Description

[0039] Figure 1 The diagram shows the structure of the device for improving the stability of ozone output pressure in Examples 1 and 2 and Comparative Example 2.

[0040] Figure 2 The diagram shows the structure of the device for improving the stability of ozone output pressure in Examples 3 to 6 and Comparative Examples 3 to 4.

[0041] Figure 3 The diagram shows the structure of the atomic layer deposition equipment and the pipelines connected to it in Examples 1 and 2 and Comparative Example 2.

[0042] Figure 4The diagrams show the atomic layer deposition apparatus and the pipes connected to it in Examples 3 to 6 and Comparative Examples 3 to 4.

[0043] Figure 5 This is a schematic diagram of the flow stabilization component. The arrows in the diagram indicate the direction of airflow.

[0044] Figure 6 The graphs show the pressure versus time for Examples 1 to 6 and Comparative Examples 1 to 4.

[0045] Figure 7 The graphs show the pressure versus time for Examples 1 and 7.

[0046] In the attached diagram, the components represented by each number are as follows: atomic layer deposition equipment 11, main gas supply line 1, branch gas supply line 2, main line back pressure valve 3, branch back pressure valve 4, front gas supply branch line 201, rear gas supply branch line 202, front branch back pressure valve 401, rear branch back pressure valve 402, collection gas line 501, guide gas line 502, return gas line 503. Detailed Implementation

[0047] The present invention will be further described in detail below with reference to the accompanying drawings.

[0048] This specific embodiment is merely an explanation of the present invention and is not intended to limit the invention. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they are within the scope of the claims of the present invention.

[0049] Example 1: In this embodiment, the device for improving the stability of ozone output pressure includes: The main gas supply line 1 is connected to the furnace opening of the atomic layer deposition equipment 11 and is used to input low-pressure ozone gas; Gas supply branch 2 is connected to the furnace side of the atomic layer deposition equipment 11 and is used to input high-pressure ozone gas; The main back pressure valve 3 is installed on the main gas supply line 1; Branch back pressure valve 4 is installed on the gas supply branch 2; The set pressure of the main back pressure valve 3 is 10 psi.

[0050] The set pressure of the branch back pressure valve 4 is 13 psi.

[0051] The ratio of the vertical distance between the connection point of the gas supply branch 2 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.5.

[0052] Among them, the atomic layer deposition equipment 11 is a main piece of equipment in photovoltaic cell manufacturing, and the structure of the furnace body of the atomic layer deposition equipment 11 specifically includes: 1. Furnace Chamber: The furnace chamber is the outer shell of the furnace body, used to protect the internal tubes and heating elements, and also serves as insulation. The furnace chamber is usually made of materials such as stainless steel and aluminum alloy, and its interior is coated with high-temperature insulating materials such as ceramic fiber and alumina.

[0053] 2. Heating Elements: The heating elements in an atomic layer deposition (ALD) system are key components for raising the temperature of the furnace tube. They typically employ resistance wires, electromagnetic coils, or radiant tubes for heating. The number and location of the heating elements are determined by the length and diameter of the furnace tube, and they are usually located inside the furnace chamber.

[0054] 3. Temperature Control System: The temperature control system of the atomic layer deposition (ALD) equipment is the core component for achieving temperature control, typically including a temperature controller and a programmable controller (PCC). The temperature controller monitors the temperature inside the furnace tube in real time and controls the heating power of the heating elements based on set values ​​and feedback signals. The PCC automatically adjusts the parameters and operating mode of the temperature controller according to the needs of the diffusion process, thereby achieving temperature rise, fall, and stabilization. Additionally, sensors are included for temperature measurement, typically using thermocouples, infrared sensors, or fiber optic sensors. These sensors monitor the temperature distribution and changes inside the furnace tube in real time and transmit the measured values ​​to the controller for processing and adjustment.

[0055] 4. Cooling System: The cooling system of the atomic layer deposition equipment is a key component for achieving temperature reduction and furnace tube protection. It typically consists of a water-cooled shell, water pipes, and water pumps. The water-cooling system can reduce the temperature of the furnace tubes through circulating water, thereby protecting the furnace tubes and heating elements. It can also control the temperature distribution and stability of the furnace body.

[0056] The main gas supply line 1 and the branch gas supply line 2 are used to introduce gas into the furnace, forming the gas intake system of the atomic layer deposition equipment 11. In addition, the gas intake system is equipped with an atmosphere control system and a gas flow control system to control the ratio and flow rate of the intake and exhaust gas. The main gas supply line 1 and the branch gas supply line 2 are connected to the furnace via flanges. Each end of the main gas supply line 1 and the branch gas supply line 2 is fitted with a corresponding flange, which is then fastened together with bolts. This flange connection facilitates disassembly and maintenance. In another embodiment, the main gas supply line 1 and the branch gas supply line 2 can also be connected to the furnace via welding or clamps / fixtures.

[0057] Among them, the main back pressure valve 3 and the branch back pressure valve 4 are valves used to maintain a preset minimum pressure in the system, allowing gas to pass through the valve only after the pressure exceeds the set value. The valve set pressure can be manually adjusted, and when the system pressure falls below the set value, the valve will close, preventing gas from passing through. The back pressure valve contributes to the stability of dynamic fluid systems, preventing pulses and oscillations caused by pressure fluctuations.

[0058] Example 2: In this embodiment, the device for improving the stability of ozone output pressure differs from that in Embodiment 1 in that: The set pressure of the main back pressure valve 3 is 12 psi.

[0059] The set pressure of the branch back pressure valve 4 is 20 psi.

[0060] Example 3: In this embodiment, the device for improving the stability of ozone output pressure includes: The main gas supply line 1 is connected to the furnace opening of the atomic layer deposition equipment 11 and is used to input low-pressure ozone gas; Gas supply branch 2 is connected to the furnace side of the atomic layer deposition equipment 11 and is used to input high-pressure ozone gas; The main back pressure valve 3 is installed on the main gas supply line 1; Branch back pressure valve 4 is installed on the gas supply branch 2; The branch back pressure valve 4 is a front branch back pressure valve 401 installed on the front gas supply branch 201 and a rear branch back pressure valve 402 installed on the rear gas supply branch 202.

[0061] The ratio of the vertical distance between the connection point of the front gas supply branch 201 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.2.

[0062] The ratio of the vertical distance between the connection point of the rear gas supply branch 202 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.4.

[0063] The set pressure of the main back pressure valve 3 is 10 psi.

[0064] The set pressure of the front branch back pressure valve 401 is 13 psi.

[0065] The set pressure of the rear branch back pressure valve 402 is 17 psi.

[0066] Example 4: In this embodiment, the device for improving the stability of ozone output pressure differs from that in Embodiment 3 in that: The set pressure of the main back pressure valve 3 is 12 psi.

[0067] The set pressure of the front branch back pressure valve 401 is 16 psi.

[0068] The set pressure of the rear branch back pressure valve 402 is 20 psi.

[0069] Example 5: In this embodiment, the device for improving the stability of ozone output pressure differs from that in Embodiment 3 in that: The set pressure of the main back pressure valve 3 is 11 psi.

[0070] The set pressure of the front branch back pressure valve 401 is 14 psi.

[0071] The set pressure of the rear branch back pressure valve 402 is 19 psi.

[0072] Example 6: In this embodiment, the device for improving the stability of ozone output pressure differs from that in Embodiment 3 in that: The ratio of the vertical distance between the connection point of the front gas supply branch 201 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.3.

[0073] The ratio of the vertical distance between the connection point of the rear gas supply branch 202 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.6.

[0074] Example 7 In this embodiment, the device for improving the stability of ozone output pressure differs from that in Embodiment 1 in that: The main gas supply line and the branch gas supply line are provided with flow stabilizing components on their inner walls; the flow stabilizing components include a gas collection line 501, a guide gas line 502 located at the inner end of the gas collection line, and a return gas line 503 located at the end of the guide gas line.

[0075] The width of the connection between the collecting air passage 501 and the main air supply passage and the branch air supply passage is larger than the inner diameter of the collecting air passage 501 and the width of the connection between the collecting air passage 501 and the guiding air passage 502. This allows for the collection of more airflow and reduces the speed of the incoming airflow, minimizing airflow power loss and helping to capture unstable airflow. The ratio of the width of the connection between the collecting air passage 501 and the main air supply passage to the inner diameter of the main air supply passage is 1:5-10. In this embodiment, the ratio is 1:5. The ratio of the width of the connection between the collecting air passage 501 and the branch air supply passage to the inner diameter of the branch air supply passage is also 1:5-10. In this embodiment, the ratio is 1:5.

[0076] The width of the guiding air passage 502 is smaller than the inner diameter of the collecting air passage 501. This allows the guiding air passage 502 to concentrate the airflow and direct it to the return air passage 503. The smaller width also helps the guiding air passage 502 maintain the directionality of the airflow and reduce turbulence. The ratio of the width of the connection between the guiding air passage 502 and the main air supply passage to the inner diameter of the main air supply passage is 1:8-12. In this embodiment, the ratio is 1:8. The ratio of the width of the connection between the guiding air passage 502 and the branch air supply passage to the inner diameter of the branch air supply passage is also 1:8-12. In this embodiment, the ratio is 1:8.

[0077] The connection between the collecting air path 501 and the guiding air path 502 has a guiding structure to help guide the airflow into the guiding air path 502. The guiding structure has a certain expansion angle to reduce the speed of the airflow, thereby reducing the degree of turbulence when entering the guiding air path.

[0078] The tilt angle of the collecting air path 501 relative to the main and branch air supply paths is typically determined based on the characteristics of the airflow and the desired flow stabilization effect. If the tilt angle is too large, unstable airflow may not be effectively collected; conversely, if the tilt angle is too small, it may create additional resistance and turbulence, affecting airflow stability. Typically, the tilt angle of the collecting air path 501 relative to the main air supply path is 45-60°. In this embodiment, the tilt angle of the collecting air path 501 relative to the main air supply path is 45°. The tilt angle of the collecting air path 501 relative to the branch air supply paths is also 45-60°. In this embodiment, the tilt angle of the collecting air path 501 relative to the branch air supply paths is 45°.

[0079] In the design of the flow stabilization component, the specific tilt angle of the return air path 503 relative to the main air supply path and / or branch air supply path is determined based on fluid dynamics principles and specific application requirements. The purpose of the return air path 503 is to reintroduce the stabilized airflow into the main vent with minimal flow resistance and disturbance. This requires the return air path to be designed to smoothly merge with the airflow in the vent. Therefore, ideally, the tilt angle of the return air path 503 should be small enough so that the airflow can smoothly merge with the airflow in the vent, avoiding additional turbulence or pressure loss. However, in practice, the tilt angle of the return air path 503 cannot be too small to ensure that the airflow does not directly impact the connection between the return air path 503 and the main air supply path and / or branch air supply path due to the small angle, thereby causing reverse turbulence or pressure fluctuations. Typically, the tilt angle of the return air path 503 relative to the main air supply path is 15-30°. In this embodiment, the tilt angle of the return air path 503 relative to the main air supply path is 15°. The inclination angle of the return gas path 503 relative to the supply gas branch is 15-30°. In this embodiment, the inclination angle of the return gas path 503 relative to the supply gas branch is 15°.

[0080] Comparative Example 1: In this comparative example, the difference from Example 1 is that: Excluding gas supply branch 2 and branch back pressure valve 4.

[0081] Comparative Example 2: In this comparative example, the difference from Example 1 is that: The set pressure of the main back pressure valve 3 is 10 psi.

[0082] The set pressure of the branch back pressure valve 4 is 10 psi.

[0083] Comparative Example 3: In this comparative example, the difference from Example 3 is that: The set pressure of the front branch back pressure valve 401 is 13 psi.

[0084] The set pressure of the rear branch back pressure valve 402 is 13 psi.

[0085] Comparative Example 4: In this comparative example, the difference from Example 3 is that: The ratio of the vertical distance between the connection point of the front gas supply branch 201 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.2.

[0086] The ratio of the vertical distance between the connection point of the rear gas supply branch 202 on the atomic layer deposition equipment 11 and the furnace opening to the length of the furnace body of the atomic layer deposition equipment 11 is 0.25.

[0087] The stability of ozone pressure was tested in Examples 1 to 6 and Comparative Examples 1 to 4. Specifically, an appropriate pressure sensor was selected to measure the ozone pressure within the atomic layer deposition (ALD) apparatus. Considering the unique properties of ozone, a pressure measurement device compatible with ozone was chosen, and its accuracy and stability were ensured. In this application, a high-temperature pressure sensor (model SP-851, Xi'an Ounai Sensor Technology Co., Ltd.) was used, and a data acquisition system supporting 4-20mA DC signal output was employed to record the ozone pressure data within the ALD apparatus. By continuously monitoring and recording ozone pressure data over a certain period, pressure fluctuations were analyzed using a pressure-time curve.

[0088] Experimental example: In the ozone introduction step of the photovoltaic cell fabrication process, ozone at a pressure of approximately 20 psi is continuously introduced into the atomic layer deposition equipment. The real-time pressure of the ozone in the furnace is recorded using a pressure sensor, with records taken every 10 seconds for a total of 7 times, forming a pressure-time curve. The curves for Examples 1 to 6 and Comparative Examples 1 to 4 are shown below. Figure 6 As shown.

[0089] By comparing the data in the table, the following conclusions can be drawn: 1. Comparing the results of Example 1 and Comparative Example 1, it can be seen that after setting up the gas supply branch 2 and the branch back pressure valve 4, the pressure stability of ozone is significantly improved.

[0090] 2. Comparing the results of Example 1 and Comparative Example 2, it can be seen that when the set pressure of the branch back pressure valve 4 is slightly greater than that of the main back pressure valve 3, the pressure stability of ozone is improved to a certain extent.

[0091] 3. Comparing the results of Examples 1 to 2 and Examples 3 to 6, it can be seen that after the branch back pressure valve 4 is divided into the front gas supply branch 201 and the rear gas supply branch 202, the pressure stability of ozone is improved to a certain extent.

[0092] 3. Comparing the results of Example 3 and Comparative Example 3, it can be seen that when the set pressure of the back pressure valve 402 of the rear branch is slightly greater than that of the back pressure valve 401 of the front branch, the pressure stability of ozone is improved to a certain extent.

[0093] 4. Comparing the results of Example 3 and Comparative Example 4, it can be seen that the rear gas supply branch 202 is located in the middle of the atomic layer deposition equipment, and the front gas supply branch 201 is located between the furnace opening and the rear gas supply branch 202, which improves the pressure stability of ozone to a certain extent.

[0094] According to the test methods of the experimental examples, the curves of Example 1 and Example 7 are as follows: Figure 7 As shown.

[0095] Comparing the results of Example 1 and Example 7, it can be seen that installing flow stabilizing components on the inner walls of the main gas supply line and the gas supply branch line can further improve the pressure stability of ozone in the furnace.

[0096] Furthermore, the same or similar element symbols are used as far as possible in the accompanying drawings and description to refer to the same or similar parts or steps. The drawings are presented in a simplified form and are not drawn to scale. For convenience and clarity only, directional terms such as top, bottom, left, right, upward, above, above, below, behind, and front may be used to refer to the drawings. These and similar directional terms should not be construed as limiting the scope of this disclosure in any way.

Claims

1. An apparatus for improving the stability of ozone output pressure, wherein the apparatus is used to introduce ozone into an atomic layer deposition apparatus (11), characterized in that, The device includes: The main gas supply line (1) is connected to the furnace opening of the atomic layer deposition equipment (11) for inputting low-pressure ozone gas; Gas supply branch (2) is connected to the furnace side of the atomic layer deposition equipment (11) for inputting high-pressure ozone gas; The main back pressure valve (3) is installed on the main gas supply line (1); A branch back pressure valve (4) is installed on the gas supply branch (2); The set pressure of the branch back pressure valve (4) is higher than that of the main back pressure valve (3). The main gas supply line and / or the branch gas supply line are provided with a flow stabilizing component on the inner wall of the pipe; the flow stabilizing component includes a collecting gas line (501), a guiding gas line (502) disposed at the inner end of the collecting gas line, and a return gas line (503) disposed at the end of the guiding gas line. The collecting gas line (501) is inclined at an angle of 45° to 60° relative to the main gas supply line (1) and / or the branch gas supply line (2). The extending direction of the guiding gas line (502) is consistent with the extending direction of the main gas supply line (1) and / or the branch gas supply line (2). The returning gas line (503) is inclined at an angle of 15° to 30° relative to the main gas supply line (1) and / or the branch gas supply line (2).

2. The device for improving the stability of ozone output pressure according to claim 1, characterized in that, The gas supply branch (2) includes a front gas supply branch (201) and a rear gas supply branch (202), wherein the front gas supply branch (201) is closer to the furnace opening than the rear gas supply branch (202).

3. The device for improving the stability of ozone output pressure according to claim 2, characterized in that, The branch back pressure valve (4) includes a front branch back pressure valve (401) installed on the front gas supply branch (201) and a rear branch back pressure valve (402) installed on the rear gas supply branch (202).

4. The device for improving the stability of ozone output pressure according to claim 3, characterized in that, The set pressure of the rear branch back pressure valve (402) is higher than that of the front branch back pressure valve (401).

5. The device for improving the stability of ozone output pressure according to claim 1, characterized in that, The set pressure of the main back pressure valve (3) is 10-12 psi.

6. The device for improving the stability of ozone output pressure according to claim 1, characterized in that, The set pressure of the branch back pressure valve (4) is 13-20 psi.

7. The device for improving the stability of ozone output pressure according to claim 3, characterized in that, The set pressure of the front branch back pressure valve (401) is 13-16 psi.

8. The device for improving the stability of ozone output pressure according to claim 3, characterized in that, The set pressure of the back pressure valve (402) of the rear branch is 17-20 psi.

9. The device for improving the stability of ozone output pressure according to claim 2, characterized in that, The ratio of the vertical distance between the connection point of the front gas supply branch (201) on the atomic layer deposition equipment (11) and the furnace opening to the length of the furnace body of the atomic layer deposition equipment (11) is 0.2 to 0.

3.

10. The device for improving the stability of ozone output pressure according to claim 2, characterized in that, The ratio of the vertical distance between the connection point of the rear gas supply branch (202) on the atomic layer deposition equipment (11) and the furnace opening to the length of the furnace body of the atomic layer deposition equipment (11) is 0.4 to 0.6.

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