A photoelectric device and a switchable window, a glass window using the same

Abstract

The present application relates to a kind of photoelectric devices, and switchable window, glass window using it, the photoelectric device includes two layers of substrates arranged oppositely;Light modulation layer is arranged between the two layers of substrates, at least one layer of substrate is arranged with the electrode layer of the light modulation layer and forms electrical contact;Busbar, one side is in electrical contact with the electrode layer;Lead-out circuit, with the first area of the other side of the busbar electrical contact;Covering conductor bar, covering the second area of the other side of the busbar, the second area of the covering exists at least partial overlap with the first area, and form the sandwich structure including busbar, lead-out circuit and covering conductor bar in the overlapping area, the covering conductor bar is in electrical contact with lead-out circuit and busbar respectively in the overlapping area and the second area except overlapping area, so as to increase the effective electrical contact area between lead-out circuit and busbar.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic technology, and in particular to an optoelectronic device and a switchable window or glass window using the same. Background Technology

[0002] Liquid crystal dimming films, as optoelectronic devices, are mainly composed of a transparent conductive substrate and a liquid crystal layer. By applying an external electric field, the alignment of liquid crystal molecules within the liquid crystal layer is controlled, thereby modulating the light. This includes switching between a high transmittance state and a scattering state, or switching between or continuously adjusting different transmittance states. Optoelectronic devices are widely used in residential and commercial buildings, automobiles, and other industries to provide functions such as privacy protection, reducing glare from ambient sunlight, and controlling harmful ultraviolet rays.

[0003] Currently, the more mature optoelectronic device technologies include PDLC (Polymer Dispersed Liquid Crystal), PSCT (Polymer Stabilized Cholesteric Texture) based on cholesteric liquid crystals, and PFCT (Polymer-Free Cholesteric Texture) based on cholesteric liquid crystals. Both of these technologies allow the window device to switch between a high-transmittance state and a scattering state. However, compared to PDLC and PSCT, PFCT requires a higher driving voltage. This is because the removal of the polymer increases the thickness of the functional layer, thus increasing the number of liquid crystal molecules that need to be driven, and consequently requiring more energy. Since liquid crystal devices are capacitive-like devices, PFCT devices have a larger operating current for the same area, necessitating more conductive and reliable electrodes. Summary of the Invention

[0004] To address the aforementioned problems, this invention provides an optoelectronic device and a switchable window or glass window using the same, to ensure electrical reliability.

[0005] To achieve the above objectives, this application provides an optoelectronic device, comprising:

[0006] Two substrate layers arranged opposite each other;

[0007] An optical modulation layer is disposed between the two substrate layers, wherein at least one substrate layer is provided with an electrode layer that forms an electrical contact with the optical modulation layer;

[0008] The busbar has one side in electrical contact with the electrode layer;

[0009] The lead-out circuit makes electrical contact with the first region on the other side of the busbar;

[0010] A covering conductor strip covers a second region on the other side of the busbar. The second covered region overlaps at least partially with the first region, and a sandwich structure including the busbar, the lead-out circuit, and the covering conductor strip is formed in the overlapping region. The covering conductor strip makes electrical contact with the lead-out circuit and the busbar in the overlapping region and the second region excluding the overlapping region, respectively, thereby increasing the effective electrical contact area between the lead-out circuit and the busbar.

[0011] In a preferred implementation, the material of the lead-out circuit is the same as the material of the covering conductive strip.

[0012] In a preferred implementation, the material of the busbar is different from the material of the covering conductor.

[0013] In a preferred implementation, the surface of the lead-out circuit is covered with a protective film.

[0014] In a preferred implementation, the lead-out circuit removes the protective film from the surface area that is in electrical contact with the covering conductor and the surface area that is in electrical contact with the busbar.

[0015] In a preferred implementation, the lead-out circuit in the first region includes a lead-out circuit substrate, a first lead-out circuit conductive layer disposed on the side of the substrate near the busbar and in electrical contact with the busbar, and a second lead-out circuit conductive layer disposed on the side of the substrate near the covering conductive strip and in electrical contact with the covering conductive strip, wherein the first and second lead-out circuit conductive layers are in electrical contact.

[0016] In a preferred implementation, the first lead-out circuit conductive layer and the second lead-out circuit conductive layer achieve electrical contact through a via penetrating the lead-out circuit substrate and the conductive material within the via.

[0017] In a preferred implementation, the electrical contact between the lead-out circuit and the first region of the busbar further includes: the lead-out circuit making direct electrical contact with the first region of the busbar, or making electrical contact with the first region of the busbar through conductive adhesive.

[0018] In a preferred implementation, the lead-out circuit makes electrical contact with the first area of ​​the busbar via conductive adhesive, specifically by means of anisotropic conductive adhesive.

[0019] In a preferred implementation, conductive adhesive is provided between the lead-out circuit and the covering conductive strip.

[0020] In a preferred implementation, a protective layer is provided on the side of the covering conductor away from the busbar.

[0021] In a preferred implementation, the busbar and the electrode layer that is electrically in contact with the busbar are located on the same substrate.

[0022] In a preferred implementation, the busbar and the electrode layer that is electrically in contact with the busbar are located on different substrates.

[0023] In a preferred implementation, the material of the busbar includes silver.

[0024] In a preferred implementation, the material of the covering conductive strip includes copper.

[0025] In a preferred embodiment, there are two electrode layers, each disposed on one of the two substrate layers; and there are two busbars, each electrically contacting one of the two electrode layers.

[0026] In a preferred implementation, the regions where the two busbars are electrically in contact with the corresponding electrode layers are located at opposite ends of the edge of the modulation region of the optoelectronic device.

[0027] In a preferred implementation, the projected areas of the regions where the two busbars are in electrical contact with the corresponding electrode layers substantially surround the edge of the modulation region of the optoelectronic device.

[0028] This application also provides a switchable window, including the optoelectronic device described above.

[0029] This application also provides a glass window, including the switchable window as described above.

[0030] In a preferred implementation, the glass window is a glass window installed on a building or a vehicle.

[0031] Since the area where the conductor bar and the busbar make electrical contact includes the area where the lead-out circuit and the busbar do not make electrical contact, the area of ​​electrical contact between the lead-out circuit and the busbar is indirectly expanded by covering the conductor bar, thereby improving the reliability of the electrode structure.

[0032] It should be understood that the above general description of the invention and the following detailed description are exemplary and illustrative and are intended to provide further explanation of the claimed invention. Attached Figure Description

[0033] The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:

[0034] Figure 1This is a cross-sectional view of the optoelectronic device provided in Embodiment 1 of the present invention;

[0035] Figure 2A for Figure 1 A perspective view of the area near the electrode structure of an optoelectronic device;

[0036] Figure 2B for Figure 2A Top view of a photoelectric device;

[0037] Figure 3A This is a schematic diagram of a specific implementation of the lead-out circuit;

[0038] Figure 3B yes Figure 3A A schematic diagram of the explosion of the circuit leading out from the middle;

[0039] Figure 3C yes Figure 3A A cross-sectional schematic diagram of the circuit leading out from the center;

[0040] Figure 4 This is a perspective view of the area near the electrode structure of the optoelectronic device provided in Embodiment 2 of the present invention;

[0041] Figure 5 This is a partial structural perspective view of the optoelectronic device provided in Embodiment 3 of the present invention;

[0042] Figure 6 This is a partial structural perspective view of the optoelectronic device provided in Embodiment 4 of the present invention;

[0043] Figure 7A This is a partial structural perspective view of the optoelectronic device provided in Embodiment 5 of the present invention;

[0044] Figure 7B for Figure 7A Top view;

[0045] Figure 8 This is a partial structural perspective view of the optoelectronic device provided in Embodiment Six of the present invention;

[0046] Figure 9 This is a partial structural perspective view of the optoelectronic device provided in Embodiment 7 of the present invention;

[0047] Figure 10A This is a perspective view of a partial structure of the optoelectronic device provided in Embodiment 8 of the present invention;

[0048] Figure 10B This is a perspective view showing a partial structure of the optoelectronic device provided in Embodiment 8 of the present invention;

[0049] Figure 11A This is a perspective view of a partial structure of the optoelectronic device provided in Embodiment 9 of the present invention;

[0050] Figure 11B This is a perspective view showing a partial structure of the optoelectronic device provided in Embodiment 9 of the present invention;

[0051] Figure 12 A schematic diagram of a partial structure of the optoelectronic device provided in Embodiment 10 of the present invention is shown. Detailed Implementation

[0052] Now, reference will be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, throughout the drawings, the same reference numerals will be used to denote the same or similar parts.

[0053] The shapes, dimensions, ratios, angles, and quantities disclosed in the accompanying drawings, which are used to describe embodiments of the invention, are merely examples, and therefore the invention is not limited to the details illustrated. Similar reference numerals always denote similar elements. In the following description, detailed descriptions will be omitted where it is determined that such detailed descriptions would unnecessarily obscure the essence of the invention.

[0054] Where the terms “comprising,” “having,” and “including” are used as described in this specification, additional parts may be added unless “only” is used. Singular terms may include plural forms unless otherwise stated.

[0055] When interpreting a component, it is interpreted as including a range of errors, although this is not explicitly described.

[0056] In the description of embodiments of the present invention, when a structure (e.g., an electrode, wire, wiring, layer, or contact) is described as being formed on top of / below the upper / lower portion of another structure or on top of / below another structure, this description should be understood to include cases where these structures are in contact with each other, and further includes cases where a third structure is disposed therebetween.

[0057] In describing temporal relationships, for example, when time sequence is described as “after,” “following,” “next,” and “before,” discontinuous cases may be included unless “exactly” or “immediately following” is used.

[0058] It should be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are merely used to distinguish one element from another. For example, without departing from the scope of the invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0059] The “X-axis direction,” “Y-axis direction,” and “Z-axis direction” should not be interpreted solely by their geometric relationship of being perpendicular to each other, but rather can have a broader directionality within the scope of the functionality of the elements of this invention.

[0060] The term "at least one" should be understood to include any and all combinations of one or more of the related listed items. For example, "at least one of the first, second, and third items" means a combination of all items proposed from the first, second, and third items, as well as two or more of the first, second, or third items.

[0061] Features of the various embodiments of the present invention may be connected or combined with each other in part or in whole, and may operate in various ways and be technology-driven, as will be fully understood by those skilled in the art. Embodiments of the present invention may be performed independently of each other, or may be performed together in an interdependent relationship.

[0062] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0063] Through extensive experiments, the applicant has discovered that various existing technical approaches cannot solve the technical problem that this invention aims to address. The specific reasons are analyzed as follows:

[0064] Prior art 1:

[0065] Electrical leads are made by using conductive silver paste to connect copper mesh. However, this method has the problem that the copper mesh has poor conductivity and the connection is weak and prone to breakage.

[0066] Prior art 2:

[0067] The problem with this method, which uses copper foil conductive adhesive and flexible circuits to lead out the current, is that the conductivity of copper foil conductive adhesive is worse than that of silver paste, and it cannot effectively transmit the current to the electrode layer (such as the ITO layer) on the substrate, which can easily lead to device failure.

[0068] Existing technology 3:

[0069] The problem with this method of using conductive silver paste and flexible circuits is that the required driving voltage for liquid crystal optoelectronic devices is usually large, resulting in a large current per unit area in the contact area between the flexible circuit and the conductive silver paste. This makes it impossible for the contact area between the flexible circuit and the conductive silver paste, as well as related components (such as the conductive adhesive used to fix the flexible circuit on the conductive silver paste), to withstand the current intensity, leading to sintering.

[0070] Existing technology 4:

[0071] The problem with this method of using conductive silver paste and solder wires is that the solder has a high melting point, usually above 200 degrees Celsius, while the maximum operating temperature of some substrate materials used in optoelectronic devices (such as PET) is lower than that. For example, the maximum operating temperature of PET material is generally below 150 degrees Celsius. Therefore, the high temperature generated during soldering will cause the substrate to shrink and deform, which will in turn damage the electrode layer on it.

[0072] Therefore, this application proposes an optoelectronic device employing a novel electrode structure. Figure 1 A cross-sectional view of the optoelectronic device provided in Embodiment 1 of the present invention is shown. The optoelectronic device includes: two substrates 100 and 100' (hereinafter referred to as the first substrate 100 and the second substrate 100') disposed opposite to each other, a light modulation layer 102 disposed between the two substrates 100 and 100', and an electrode structure 110. At least one of the first substrates 101 and the second substrate 101' has an electrode layer that forms an electrical contact with the light modulation layer 102. Figure 1 In the example shown, electrode layers 101 and 101' (hereinafter referred to as the first electrode layer 101 and the second electrode layer 101') that form electrical contact with the light modulation layer 102 are respectively disposed on the first substrate 100 and the second substrate 100'. The electrode structure 110 includes a bus bar 111, a lead-out circuit 112, and a covering conductive bar 113.

[0073] The first substrate 100 and the second substrate 100' can be transparent glass substrates or plastic films. For example, the first substrate 100 and the second substrate 100' can be (but are not limited to) sheets or films comprising cellulose resins such as TAC (triacetyl cellulose) or DAC (diacetyl cellulose), COP (cyclic olefin polymers) such as norbornene derivatives, acrylic resins such as COC (cyclic olefin polymers) or PMMA (polymethyl methacrylate), polyolefins such as PC (polycarbonate), PE (polyethylene) or PP (polypropylene), polyesters such as PVA (polyvinyl alcohol), PES (polyethersulfone), PEEK (polyether ether ketone), PEI (polyetherimide), PEN (polyethylene naphthalate) and PET (polyethylene terephthalate), PI (polyimide), PSF (polysulfone), or fluorinated resins.

[0074] A first electrode 101 is disposed on a first substrate 100, and a second electrode 101' is disposed on a second substrate 100'. The first electrode 101 may be disposed on the entire surface of one surface of the first substrate 100, and the second electrode 101' may be disposed on the entire surface of one surface of the second substrate 100'. Each of the first electrode 101 and the second electrode 101' may be a transparent electrode. For example, each of the first electrode 101 and the second electrode 101' may be (but is not limited to) silver oxide (AgO or Ag2O or Ag2O3), aluminum oxide (e.g., Al2O3), tungsten oxide (e.g., WO2 or WO3 or W2O3), magnesium oxide (e.g., MgO), molybdenum oxide (e.g., MoO3), zinc oxide (e.g., ZnO), tin oxide (e.g., SnO2), indium oxide (e.g., In2O3), chromium oxide (e.g., CrO3 or Cr2O3), antimony oxide (… For example, Sb2O3 or Sb2O5), titanium oxide (e.g., TiO2), nickel oxide (e.g., NiO), copper oxide (e.g., CuO or Cu2O), vanadium oxide (e.g., V2O3 or V2O5), cobalt oxide (e.g., CoO), iron oxide (e.g., Fe2O3 or Fe3O4), niobium oxide (e.g., Nb2O5), indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide (ZAO), aluminum zinc oxide (TAO), or antimony zinc oxide (ATO).

[0075] The optical modulation layer 102 alters its optical properties under the control of an applied electric field, thereby achieving modulation of any one or any combination of optical properties such as intensity, color, direction, phase, polarization, scattering, and absorption of incident light. The optical modulation layer 102 includes optoelectronic materials whose optical properties can be altered by an electric field, such as optically anisotropic optoelectronic materials whose arrangement can be altered by an electric field, including liquid crystal materials and SPD (Suspended-particle devices) materials.

[0076] Figure 2A It shows Figure 1 A perspective view of the area near the electrode structure of an optoelectronic device. Figure 2B for Figure 2A Top view, such as Figure 2A and 2BAs shown, in the electrode structure 110, one side of the busbar 111 is electrically contacted with the first electrode layer 101, and the first region A1 of the other side is electrically contacted with the lead-out circuit 112. A covering conductive strip 113 covers the second region A2 of the other side of the busbar 111. The second region A2 at least partially overlaps with the first region A1, thus forming a sandwich structure including the busbar 111, the lead-out circuit 112, and the covering conductive strip 113 in the overlapping region. The covering conductive strip 113 is electrically contacted with the lead-out circuit 113 in the overlapping region, and it is also electrically contacted with the busbar 111 in a second region other than the overlapping region. Figure 2B As shown in the example, in this embodiment, region A2 includes region A1 and is larger than region A1.

[0077] Thus, since the area where the covering conductor 113 makes electrical contact with the busbar 111 includes the area where the lead-out circuit 112 and the busbar 111 do not make electrical contact, the covering conductor 113 indirectly expands the area of ​​electrical contact between the lead-out circuit 112 and the busbar 111, thereby increasing the effective electrical contact area between the lead-out circuit 112 and the busbar 111. Therefore, the current flowing through the lead-out circuit 112 can not only be introduced into or out of the busbar 111 through its own area of ​​electrical contact with the busbar 111, but can also be conducted to a larger area and introduced into the busbar 111 through the covering conductor 113, or the current flowing out of the busbar 111 can be conducted to the lead-out circuit 112 through a larger area through the covering conductor 113, thereby improving the reliability of the electrode structure.

[0078] In an optional embodiment, the material of the lead-out circuit 112 can be the same as the main material of the covering conductive strip 113. This reduces the contact resistance between the busbar 111 and the covering conductive strip 113, further improving electrical performance. The material of the busbar can be different from the main material of the covering conductive strip. For example, the material of the covering conductive strip can be a material with lower cost than the busbar material, further reducing the cost of the electrode structure and the overall optoelectronic device. In an optional example, the material of the busbar 111 can include silver, the main material of the covering conductive strip 113 can include copper, and the material of the lead-out circuit 112 can include copper. The covering conductive strip 113 can be in the form of a conductive foil, which can be freely cut and pasted in practice.

[0079] It should be noted that, in order to increase the electrical contact area between the lead-out circuit 112 and the busbar 111, the inventors also attempted to directly increase the size of the lead-out circuit 112, even to the point where it was almost the same size as the busbar 111. However, this approach proved to be costly after practical verification. This is because the busbar 111 often uses a standard size in the actual industry chain, and increasing its size requires customization, thus significantly increasing component costs. Using a lower-cost or customizable covering conductor strip 113 can indirectly increase the electrical contact area between the lead-out circuit 112 and the busbar 111 without significantly increasing device costs, which is undoubtedly a better choice.

[0080] Figure 3A A schematic diagram of a specific implementation of the lead-out circuit 112 in this embodiment is shown. Figure 3B yes Figure 3A An explosion diagram of the circuit 112 leading out.

[0081] See Figure 3A and Figure 3B To better protect the lead-out circuit 112, a protective film 1122 can be provided on the surface of the lead-out circuit body 1121. The material of the protective film 1122 can be PI. According to the requirements of the embodiment of the present invention, the protective film is removed from the surface area of ​​the lead-out circuit 112 that contacts the covering conductive strip 113 and the surface area that contacts the busbar 111, so as to avoid affecting the electrical contact effect in these areas.

[0082] Furthermore, the lead-out circuit body 1121 of the lead-out circuit 112 can adopt a double-sided conductive layer structure. Specifically, the lead-out circuit body 1121 includes a lead-out circuit substrate 11211, and a first lead-out circuit conductive layer 11213 and a second lead-out circuit conductive layer 11212 located on both sides of the lead-out circuit substrate 11211. The lead-out circuit substrate 11211 provides support and necessary structural strength. The first lead-out circuit conductive layer 11213 is located on the side of the lead-out circuit substrate 11211 near the busbar and is in electrical contact with the busbar 111. The second lead-out circuit conductive layer 11212 is located on the side of the lead-out circuit substrate 11211 near the covering conductive strip 113 and is in electrical contact with the covering conductive strip 113. In addition, the first lead-out circuit conductive layer 11213 and the second lead-out circuit conductive layer 11212 are also in electrical contact with each other. In a preferred embodiment, the electrical contact between the first lead-out conductive layer 11213 and the second lead-out conductive layer 11212 can be achieved by means of, Figure 3CThe cross-sectional view shows the following implementation: electrical contact between the first conductive layer 11213 and the second conductive layer 11212 on both sides of the circuit substrate 11211 is achieved through at least one via 11214 penetrating the lead-out circuit substrate 11211 and the conductive material 11215 filled therein. It should be noted that the via 11214 can be located at any position on the circuit substrate 11211, for example, at a segment corresponding to the electrical contact between the lead-out circuit 112 and the busbar 111, or in other segments. The number of vias 11214 can be multiple.

[0083] Figure 4 This diagram shows a perspective view near the electrode structure of the optoelectronic device according to a second embodiment of the present invention. Figure 1 The main difference between this embodiment and the one shown in Figure 2 lies in the length of the covering conductive strip. For example... Figure 4 As shown, in this embodiment, the first substrate 200 is basically the same as the first substrate 100 in FIG2, and the first electrode layer 201 is basically the same as the first electrode layer 101 in FIG2. Detailed descriptions of the first substrate 200 and the first electrode layer 201 are omitted here.

[0084] exist Figure 4 In the illustrated embodiment, the covering strip 213 covers the entire area of ​​the busbar 211 to maximize the area of ​​electrical contact between the lead-out circuit 212 and the busbar 211. Of course, in this embodiment, the area of ​​the busbar 211 covered by the covering strip 213 (the second area) still includes the area of ​​electrical contact between the lead-out circuit 212 and the busbar 211 (the first area).

[0085] Figure 5 A partial structural perspective view of the optoelectronic device provided in the third embodiment of the present invention is shown. This embodiment is similar to... Figure 1 The main difference between this embodiment and the one shown in Figure 2 lies in the length of the covering conductive strip. For example... Figure 5 As shown, in this embodiment, the first substrate 300 is basically the same as the first substrate 100 in FIG2, and the first electrode layer 301 is basically the same as the first electrode layer 101 in FIG2. Detailed descriptions of the first substrate 300 and the first electrode layer 301 are omitted here.

[0086] exist Figure 5 In the illustrated embodiment, the covering conductor 313 does not completely cover the area where the lead-out circuit 312 and the busbar 311 are in electrical contact, and there is partial overlap between the area covered by the covering conductor 313 covering the busbar 311 (second area) and the area where the lead-out circuit 312 and the busbar 311 are in electrical contact (first area).

[0087] Since there is still electrical contact between the lead-out circuit 312 and the covering conductive strip 313, and the area where the covering conductive strip 313 and the busbar 311 make electrical contact includes the area where the lead-out circuit 312 and the busbar 311 do not make electrical contact, the area of ​​electrical contact between the lead-out circuit 312 and the busbar 311 is indirectly expanded by means of the covering conductive strip 313, thereby increasing the effective electrical contact area between the lead-out circuit 312 and the busbar 311, and thus improving the reliability of the electrode structure.

[0088] Figure 6 A partial structural perspective view of the optoelectronic device provided in the fourth embodiment of the present invention is shown. This embodiment is related to... Figure 1 The main difference between this embodiment and the one shown in Figure 2 lies in the length of the covering conductive strip. For example... Figure 6 As shown, in this embodiment, the first substrate 400 is basically the same as the first substrate 100 in FIG2, and the first electrode layer 401 is basically the same as the first electrode layer 101 in FIG2. Detailed descriptions of the first substrate 400 and the first electrode layer 401 are omitted here.

[0089] exist Figure 6 In the illustrated embodiment, the covering conductor 413 does not completely cover the entire area of ​​the busbar 411, nor does it completely cover the area where the lead-out circuit 412 is in electrical contact with the busbar 411. There is partial overlap between the area covered by the covering conductor 413 of the busbar 411 (the second area) and the area where the lead-out circuit 412 is in electrical contact with the busbar 411 (the first area).

[0090] Figure 7A A partial structural perspective view of the optoelectronic device provided in the fifth embodiment of the present invention is shown. Figure 7B for Figure 7A Top view, such as Figure 7A and 7B As shown, this embodiment is similar to Figure 1 The main difference between this embodiment and the one shown in Figure 2 lies in the width of the covering conductor. For example... Figure 7A As shown, in this embodiment, the first substrate 500 is basically the same as the first substrate 100 in FIG2, and the first electrode layer 501 is basically the same as the first electrode layer 101 in FIG2. Detailed descriptions of the first substrate 500 and the first electrode layer 501 are omitted here.

[0091] In the fifth embodiment of the present invention, in the region where the lead-out circuit 512 and the busbar 511 are in electrical contact (i.e., the first region), the width of the region where the covering strip 513 covers the lead-out circuit 512 (i.e., the second region) (i.e., the size of the second region in the direction perpendicular to the extension length direction of the covering strip 513) is narrower than the width of the first region (i.e., the size of the first region in the direction perpendicular to the extension length direction of the covering strip 513). Figure 7BAs shown, within the first region, the lengths of the first region A1 and the second region A2 are equal, but the width of the second region A2 is narrower than the width of the second region A2. To satisfy this condition, a specific implementation is as follows: Figure 7A and 7B As shown, the widths of the covering conductor 513 and the lead-out circuit 512 are basically the same at all positions. Therefore, if the width of the covering conductor 513 is less than the width of the first region A1, the width of the second region A2 within the first region A1 will also necessarily be less than the width of the first region A1. Furthermore, the width of the second region A2, where the lead-out circuit 512 is in electrical contact with the busbar 511, can be equal to or less than the width of the busbar 511 within that second region A2.

[0092] The solution adopted in the fifth embodiment of the present invention can reduce costs while achieving the purpose of the present invention and ensuring the stability of the sandwich structure in the first region A1.

[0093] Figure 8 A partial structural perspective view of the optoelectronic device provided in the sixth embodiment of the present invention is shown. This embodiment is related to... Figure 1 The main difference from the embodiment shown in Figure 2 is that conductive adhesive 614 is provided on the side of the covering conductive strip 613 facing the busbar 611. In this embodiment, the first substrate 600 is basically the same as the first substrate 100 in Figure 2, and the first electrode layer 601 is basically the same as the first electrode layer 101 in Figure 2. Detailed descriptions of the first substrate 600 and the first electrode layer 601 are omitted here.

[0094] In the sixth embodiment of the present invention, the cover conductive strip 613 makes electrical contact with the busbar 611 and the lead-out circuit 612 respectively through conductive adhesive 614. The conductive adhesive 614 can improve the connection stability between the cover conductive strip 613 and the busbar 611 and the lead-out circuit 612 while ensuring electrical conductivity.

[0095] Figure 9 A partial structural perspective view of the optoelectronic device provided in the seventh embodiment of the present invention is shown. This embodiment is related to... Figure 1 The main difference from the embodiment shown in Figure 2 is that conductive adhesive 715 is provided on the side of the lead-out circuit 712 facing the busbar 711. In this embodiment, the first substrate 700 is basically the same as the first substrate 100 in Figure 2, and the first electrode layer 701 is basically the same as the first electrode layer 101 in Figure 2. Detailed descriptions of the first substrate 700 and the first electrode layer 701 are omitted here.

[0096] In the seventh embodiment of the present invention, the lead-out circuit 712 is electrically connected to the busbar 711 via conductive adhesive 715. The conductive adhesive 714 can improve the connection stability between the lead-out circuit 712 and the busbar 711 while ensuring electrical conductivity.

[0097] In addition, with Figure 8 The scheme shown in the figure is similar, in Figure 9 In the illustrated embodiment, conductive adhesive 714 is provided on the side of the cover conductive strip 713 facing the busbar 711. The cover conductive strip 713 makes electrical contact with the busbar 711 and the lead-out circuit 712 through the conductive adhesive 714. The conductive adhesive 714 can improve the connection stability between the cover conductive strip 713 and the busbar 711 and the lead-out circuit 712 while ensuring electrical conductivity.

[0098] In the above embodiments, a protective layer may be provided on the side of the conductor bar away from the bus bar to protect the entire electrode structure from contamination or damage, and may even prevent leakage and protect the operator.

[0099] Figure 10A This image shows a perspective view of a partial structure of the optoelectronic device provided in the eighth embodiment of the present invention, with the viewpoint biased towards a top-down direction. Figure 10B This is a perspective view of a partial structure of the optoelectronic device in this embodiment, viewed from a low angle. In this embodiment, two substrates are specifically shown, namely a first substrate 800 and a second substrate 800', and each substrate has a corresponding electrode layer, namely a first electrode layer 801 is provided on the first substrate 800, and a second electrode layer 801' is provided on the second substrate 80'. Figure 10A and Figure 10B The light modulation layer is not shown in the figure. Those skilled in the art should understand that the light modulation layer is disposed between the two substrates 800 and 800'.

[0100] Because there are two electrode layers, two sets of electrode structures are required. Figure 10A and 10B The middle electrode structure is exemplary and adopts the same as... Figure 2A The focus of this embodiment is to illustrate the arrangement of the two sets of electrode structures, rather than the specific structural details of the electrode structures. Therefore, those skilled in the art should understand that any one of the electrode structures can be replaced with... Figure 4 , Figure 5 , Figure 6 , Figure 7A , Figure 8 , Figure 9 The electrode structure shown in the figure and its equivalent replacement method are shown in the figure.

[0101] Busbar 811 and Busbar 811' with Figure 2A The busbar 111 is basically the same as that in the circuit, and the lead-out circuit 812 and lead-out circuit 812' are the same as those in the circuit. Figure 2A The lead-out circuit 112 is basically the same as that in the circuit, and the covering conductor 813 and the covering conductor 813' are the same as those in the circuit. Figure 2AThe coverage conductor 113 is basically the same as that in the previous one. Detailed descriptions of busbar 811 and busbar 811', lead circuit 812 and lead circuit 812', and coverage conductor 813 and coverage conductor 813' are omitted here.

[0102] In this embodiment, the busbar and the electrode layer in electrical contact with it in each electrode structure are located on the same substrate, see [reference]. Figure 10A and Figure 10B For the first electrode layer 801, the busbar 811, which is electrically in contact with the electrode layer 801, is itself disposed on the surface of the first electrode layer 801. Thus, the current introduced through the lead-out circuit 812 ultimately flows into the first electrode layer 801 through the busbar 811, or the current flowing out of the first electrode layer 801 flows into the busbar 811. For the second electrode layer 801', the busbar 811', which is electrically in contact with the electrode layer 801', is itself disposed on the surface of the second electrode layer 801'. Thus, the current introduced through the lead-out circuit 812' ultimately flows into the second electrode layer 801' through the busbar 811', or the current flowing out of the second electrode layer 801' flows into the busbar 811'. This allows the desired electric field to be formed in the optical modulation layer.

[0103] Furthermore, to prevent the side of the conductive strips 813 and 813' away from the lead-out circuit they cover from accidentally contacting the electrode layer on the opposing substrate, a method such as... Figure 10A and 10B The insulation scheme shown involves removing the electrode layer, along with the corresponding substrate, in the area corresponding to the side of the conductive strips 813 and 813' facing away from the lead-out circuits 812 and 812' they cover. This prevents the conductive strip 813 from accidentally making electrical contact with the second electrode layer 801', or the conductive strip 813' from accidentally making electrical contact with the first electrode layer 801. This creates a "window-like" structure in the electrode layer and substrate on the opposite side of the conductive strips 813 and 813'.

[0104] Figure 11A This is a perspective view of a partial structure of the optoelectronic device provided in the ninth embodiment of the present invention. Figure 11B This diagram shows a perspective view of a partial structure of the optoelectronic device in this embodiment, with the viewpoint biased towards the side. The main difference from the embodiment shown in Figure 10 is that in this embodiment, a busbar and the electrode layer electrically in contact with it are located on different substrates.

[0105] See Figure 11A and Figure 11BFor the first electrode layer 901, the busbar 911 electrically contacting the electrode layer 901 is itself disposed on the surface of the first electrode layer 901. Thus, the current introduced through the lead-out circuit 912 ultimately flows into the first electrode layer 901 through the busbar 911, or the current flowing out of the first electrode layer 901 flows into the lead-out circuit 912 through the busbar 911 and the covering conductive strip 913. For the second electrode layer 901', the busbar 911' ultimately electrically contacting it is not directly disposed on the second electrode layer 901', but is disposed on the first electrode layer 901. The first electrode layer 901 is divided into two mutually insulated regions 901A and 901B by the isolation structure 901C. The busbar 911' is specifically disposed on region 901B of the first electrode layer 901. An interlayer conductive structure 903 electrically contacting region 901B is also disposed on region 901B of the first electrode layer 901. The interlayer conductive structure 903 realizes the second electrode layer 901's electrical contact with the second electrode layer 901'. Electrical conduction occurs between the electrode layer 901' and region 901B of the first electrode layer 901. Current introduced through the lead-in circuit 912' is ultimately introduced into region 901B of the first electrode layer 901 via busbar 911', and further introduced into the second electrode layer 901' via the interlayer conduction structure 903. Alternatively, current flowing from the second electrode layer 901' is introduced into region 901B of the first electrode layer 901 via the interlayer conduction structure 903, and further introduced into the lead-in circuit 912' via busbar 911' and the covering conduction bar 913'. The isolation structure 901C can be etched onto the first electrode layer 901 using laser cutting. The interlayer conduction structure 903 can be implemented using a section of the sealant (i.e., frame sealant) used to seal the area surrounding the optical modulation layer. This section of sealant can incorporate conductive materials, such as conductive spheres.

[0106] In addition, see Figure 11B To prevent the side of the conductive strips 913 and 913' away from the covered lead-out circuit from accidentally contacting the electrode layer on the opposing substrate, the electrode layer in the corresponding area on the side of the conductive strips 913 and 913' away from the covered lead-out circuits 912 and 912' can be removed, along with the corresponding substrate, to avoid the conductive strip 913' accidentally making pre-contact with the second electrode layer 901', or the conductive strip 913 accidentally making pre-contact with the second electrode layer 901'. This creates a "window-like" structure in the electrode layer and substrate on the opposite side of the conductive strips 913 and 913'.

[0107] In embodiments eight and nine above, the regions where the two busbars are electrically in contact with their corresponding electrode layers are located at the same end of the edge of the modulation region of the optoelectronic device. To improve electrical performance, in an alternative implementation, the regions where the two busbars are electrically in contact with their corresponding electrode layers are located at opposite ends of the edge of the modulation region of the optoelectronic device. Furthermore, when the size of the modulation region of the optoelectronic device is large, it is necessary to further optimize the current flow path. In a preferred implementation, the following can be used: Figure 12 The busbar layout shown substantially surrounds the edge of the modulation region 1000A of the optoelectronic device 1000 with the projected areas of the regions where the two busbars 1011 and 1011' are in electrical contact with the corresponding electrode layers. Lead-out circuits 1012 and 1012' are in electrical contact with busbars 1011 and 1011', respectively.

[0108] This invention also provides a switchable window, which includes optoelectronic devices as described in the various embodiments above.

[0109] This invention also provides a glass window, including the switchable window described above. This glass window can be installed on a building or a vehicle.

[0110] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0111] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. An optoelectronic device, comprising: Two substrate layers arranged opposite each other; An optical modulation layer is disposed between the two substrate layers, wherein at least one substrate layer is provided with an electrode layer that forms an electrical contact with the optical modulation layer; The busbar has one side in electrical contact with the electrode layer; The lead-out circuit makes electrical contact with the first region on the other side of the busbar; A covering conductor strip covers a second region on the other side of the busbar. The second covered region overlaps at least partially with the first region, and a sandwich structure including the busbar, the lead-out circuit, and the covering conductor strip is formed in the overlapping region. The covering conductor strip makes electrical contact with the lead-out circuit and the busbar in the overlapping region and the second region excluding the overlapping region, respectively, thereby increasing the effective electrical contact area between the lead-out circuit and the busbar.

2. The optoelectronic device as described in claim 1, characterized in that, The material of the lead-out circuit is the same as the material of the covering conductive strip.

3. The optoelectronic device as described in claim 1, characterized in that, The material of the busbar is different from the material of the covering conductor.

4. The optoelectronic device as described in claim 1, characterized in that, The surface of the lead-out circuit is covered with a protective film.

5. The optoelectronic device as described in claim 4, characterized in that, The lead-out circuit removes the protective film from the surface area that is in electrical contact with the covering conductor and the surface area that is in electrical contact with the busbar.

6. The optoelectronic device as described in claim 1, characterized in that, The lead-out circuit includes a lead-out circuit substrate, a first lead-out circuit conductive layer disposed on the side of the substrate near the busbar and in electrical contact with the busbar, and a second lead-out circuit conductive layer disposed on the side of the substrate near the covering conductive strip and in electrical contact with the covering conductive strip, wherein the first and second lead-out circuit conductive layers are in electrical contact.

7. The optoelectronic device as described in claim 6, characterized in that, The first and second conductive layers of the lead circuit achieve electrical contact through vias penetrating the lead circuit substrate and the conductive material within the vias.

8. The optoelectronic device as described in claim 1, characterized in that, The electrical contact between the lead-out circuit and the first area of ​​the busbar further includes: the lead-out circuit making direct electrical contact with the first area of ​​the busbar, or making electrical contact with the first area of ​​the busbar through conductive adhesive.

9. The optoelectronic device as described in claim 8, characterized in that, Specifically, the lead-out circuit makes electrical contact with the first area of ​​the busbar through conductive adhesive.

10. The optoelectronic device as described in claim 1, characterized in that, Conductive adhesive is provided between the lead-out circuit and the cover conductive strip.

11. The optoelectronic device as described in claim 1, characterized in that, The side of the cover conductor away from the busbar has a protective layer.

12. The optoelectronic device as described in claim 1, characterized in that, The busbar and the electrode layer that are in electrical contact with the busbar are located on the same substrate.

13. The optoelectronic device as described in claim 1, characterized in that, The busbar and the electrode layer that are in electrical contact with the busbar are located on different substrates.

14. The optoelectronic device as described in claim 1, characterized in that, The material of the busbar includes silver.

15. The optoelectronic device as described in claim 1, characterized in that, The material of the covering conductive strip includes copper.

16. The optoelectronic device according to any one of claims 1 to 15, characterized in that, There are two electrode layers, which are respectively disposed on the two substrate layers; there are two busbars, which are respectively in electrical contact with one of the two electrode layers.

17. The optoelectronic device as described in claim 16, characterized in that, The regions where the two busbars are electrically in contact with the corresponding electrode layers are located at opposite ends of the edge of the switching modulation region of the optoelectronic device.

18. The optoelectronic device as claimed in claim 17, characterized in that, The projected areas of the regions where the two busbars are in electrical contact with the corresponding electrode layers surround the edge of the modulation region of the optoelectronic device.

19. A switchable window, characterized in that, Including the optoelectronic device as described in any one of claims 1 to 18.

20. A glass window, characterized in that, Includes the switchable window as described in claim 19.

21. The glass window as described in claim 20, characterized in that, The glass window is a glass window installed on a building or a means of transport.

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