Method for monitoring a probe, semiconductor device and storage medium

Abstract

The present disclosure provides a method for monitoring a probe, a semiconductor device and a storage medium. The method for monitoring the probe comprises: obtaining a target reference value, the target reference value being determined based on a first image or a first topography formed by a target process; controlling a target probe to measure a to-be-measured pattern or a to-be-measured topography formed by the target process to obtain measurement information of the target probe; and replacing the target probe when a difference between the measurement information and the target reference value is less than or equal to a first threshold. The present disclosure takes the target reference value related to the target process as a reference standard, compares the measurement information output in real time in the measurement process with the target reference value, and replaces the target probe when the difference between the two is less than or equal to the first threshold, indicating that the target probe cannot obtain accurate measurement results in the measurement process corresponding to the target process, and the target probe needs to be replaced to improve the measurement result accuracy and reliability of the target probe.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a method, semiconductor device, and storage medium for monitoring probes. Background Technology

[0002] Semiconductor manufacturing involves numerous process steps. To ensure process reliability, the morphology of the structure formed after each process step needs to be measured. For example, an AFM (Atomic Force Microscope) is used to probe the formed pattern to measure whether its shape and size conform to the preset target pattern. During the measurement of the pattern's shape and size, when using contact imaging mode, the probes on the AFM equipment will suffer wear. When the probe wear reaches a certain level, accurate measurements are no longer possible. For instance, when using a probe to measure the morphology of a hole, the width and depth of the hole affect the measurement. If the probe tip is too wide, it cannot reach the bottom of the hole for measurement, resulting in abnormal measurement results. Therefore, it is necessary to monitor the probe's morphology to ensure the accuracy of the measurements.

[0003] Currently, the method for monitoring the morphology of probes typically involves measuring a standard sample of known size with the probe, then fitting the measurement results and the actual size of the standard sample to determine the probe's morphology and whether it can be used for related process measurements. However, this method can only be performed before measurement and cannot monitor the probe's status in real time during the measurement process. This makes it difficult to accurately determine the appropriate time to replace the probe, potentially resulting in the actual lifespan of the probe being far less than its theoretical lifespan, failing to achieve maximum probe utilization. Furthermore, it may lead to probes becoming dimensionally abnormal and unusable for related process measurements, yet still being used, resulting in inaccurate morphology measurements of the process pattern.

[0004] At the same time, there are many uncertainties in the measurement process. When the measurement results are abnormal, because the size of the probe cannot be monitored in real time, it is necessary to eliminate all other influencing factors, such as machine malfunctions and measurement process abnormalities, in order to determine whether the measurement results are inaccurate due to probe malfunction. This process takes a lot of time and affects the processing and production efficiency. Summary of the Invention

[0005] The following is an overview of the subject matter described in detail in this disclosure. This overview is not intended to limit the scope of the claims.

[0006] This disclosure provides a method, semiconductor device, and storage medium for monitoring probes.

[0007] According to a first aspect of this disclosure, a method for monitoring a probe is provided, the method comprising:

[0008] Obtain a target reference value, which is determined based on a first pattern or first morphology formed by the target process;

[0009] The target probe is controlled to measure the pattern or morphology to be measured formed by the target process, so as to obtain the measurement information of the target probe;

[0010] When the difference between the measured information and the target reference value is less than or equal to a first threshold, the target probe is replaced, wherein the first threshold is greater than or equal to zero.

[0011] According to some embodiments of this disclosure, the method for monitoring the probe further includes:

[0012] When the difference between the measured information and the target reference information is greater than the first threshold, the target probe is controlled to continue measurement.

[0013] According to some embodiments of this disclosure, the first pattern or first morphology formed by the target process includes a recessed region, and obtaining a target reference value includes:

[0014] Obtain the target recess width of the target process;

[0015] The maximum allowable probe width is obtained when the recessed area formed by the target process is measured.

[0016] The target reference value is obtained based on the target indentation width and the probe limit width.

[0017] According to some embodiments of this disclosure, obtaining the maximum allowable probe width when measuring the recessed region formed by the target process includes:

[0018] Obtain configuration information, which is used to characterize the correspondence between the process and the limit width of the probe that can be used when measuring the recessed area formed by the process;

[0019] Based on the target process and the configuration information, the probe limit width corresponding to the target process is obtained.

[0020] According to some embodiments of this disclosure, obtaining the target reference value based on the target indentation width and the probe limit width includes:

[0021] The target reference value is the difference between the target indentation width and the probe limit width.

[0022] According to some embodiments of this disclosure, the method for establishing the configuration information includes:

[0023] Obtain all processes involved in the wafer sample processing, and the recess width of the recessed region formed by each process;

[0024] Based on each of the aforementioned processes, multiple probes of different widths are controlled to measure the recessed area formed by the process, thereby obtaining multiple sample measurement values.

[0025] Based on each of the aforementioned processes, the width of the probe corresponding to the sample measurement value that meets the preset requirements is selected from the plurality of sample measurement values ​​as the probe limit width;

[0026] Establish the correspondence between each of the aforementioned processes and the probe's limit width to obtain the configuration information.

[0027] According to some embodiments of this disclosure, selecting the width of the probe corresponding to a sample measurement value that meets preset requirements from a plurality of corresponding sample measurement values ​​as the probe limit width includes:

[0028] From a plurality of sample measurements, the width of the probe corresponding to the smallest sample measurement value that is greater than the sample width is selected as the probe limit width.

[0029] According to some embodiments of this disclosure, the method for monitoring the probe further includes:

[0030] When the difference between the measurement information and the target reference value is less than or equal to the first threshold, the measurement process information of the target probe is obtained;

[0031] If the measurement process information meets the preset conditions, the target probe is replaced.

[0032] According to some embodiments of this disclosure, the method for monitoring the probe further includes:

[0033] If the measurement process information does not meet the preset conditions, the measurement process information shall be adjusted.

[0034] The target probe is controlled to measure the pattern or morphology to be measured formed by the target process again based on the adjusted measurement process information.

[0035] According to some embodiments of this disclosure, obtaining the measurement process information of the target probe includes:

[0036] Collect image information of the measurement process of the target probe on the target process forming the pattern or morphology to be measured;

[0037] Based on the image information, the measurement process information is obtained.

[0038] According to some embodiments of this disclosure, the target reference value is greater than the limit width of the probe that can be used when the first pattern or first morphology formed by the target process is measured.

[0039] According to some embodiments of this disclosure, the method for monitoring the probe includes:

[0040] Record the working life of the target probe, which is the working time from the start of the working time of the target probe to the time of replacement;

[0041] Record the number of wafers measured by the target probe during its operational lifetime;

[0042] Establish the correspondence between the number of wafers, the working time of the target probe, and the target process, and generate early warning reference information.

[0043] According to some embodiments of this disclosure, the method for monitoring the probe further includes:

[0044] Monitor the operating time of the target probe;

[0045] Based on the working duration of the target probe and the early warning reference information, an early warning message is issued before the target probe needs to be replaced.

[0046] According to a second aspect of this disclosure, a semiconductor device is provided for implementing the method for monitoring a probe as described in the first aspect of this disclosure.

[0047] According to a third aspect of this disclosure, a non-transitory computer-readable storage medium is provided, the storage medium storing computer program instructions that, when invoked by a processor of a semiconductor device, enable the semiconductor device to perform the method for monitoring a probe as described in the first aspect of this disclosure.

[0048] In the method, semiconductor device, and storage medium for monitoring probes provided in this disclosure, a target reference value related to the target process is set as a reference standard. During the measurement process of the target probe, the measurement information output in real time during the measurement process is compared with the target reference value. When the difference between the two is less than or equal to a first threshold, it indicates that the target probe can no longer obtain relatively accurate measurement results in the measurement process corresponding to the target process, and the target probe needs to be replaced to improve the accuracy and reliability of the measurement results of the target probe. At the same time, it can also prevent the target probe from being replaced before reaching its service life, thereby improving the utilization rate of the target probe.

[0049] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood. Attached Figure Description

[0050] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of these embodiments. In these drawings, similar reference numerals are used to denote similar elements. The drawings described below are some embodiments of the present disclosure, but not all embodiments. Other drawings will be readily available to those skilled in the art based on these drawings without inventive effort.

[0051] Figure 1 This is a flowchart illustrating a method for monitoring a probe according to an exemplary embodiment.

[0052] Figure 2 This is a flowchart illustrating a method for monitoring a probe according to an exemplary embodiment.

[0053] Figure 3 This is a schematic diagram illustrating a target probe measuring a recessed region according to an exemplary embodiment.

[0054] Figure 4 This is a flowchart illustrating a method for monitoring a probe according to an exemplary embodiment.

[0055] Figure 5 This is a flowchart illustrating a method for monitoring a probe according to an exemplary embodiment.

[0056] Figure 6 This is a block diagram of a semiconductor device according to an exemplary embodiment. Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions in the disclosed embodiments will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the embodiments of this disclosure without creative effort are within the scope of protection of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be arbitrarily combined with each other.

[0058] The resulting pattern is examined using AFM (Atomic Force Microscope) to measure its shape and size to ensure it conforms to a pre-defined target pattern. During this measurement process, when using contact imaging mode, the probe on the AFM device suffers wear. When the probe wears to a certain extent, accurate measurements become impossible. For example, when measuring the shape of a hole, the width and depth of the hole affect the measurement. If the probe tip is too wide, it cannot reach the bottom of the hole, resulting in abnormal measurement results. Therefore, it is necessary to monitor the probe's shape to ensure the accuracy of measurements.

[0059] The method for monitoring probe morphology typically involves measuring a standard sample of known size with the probe, then fitting the measurement results to the actual size of the standard sample to determine the probe morphology, and finally determining whether the probe can be used for measurement in the relevant process. However, this method has the following problems: a) It cannot monitor the probe's status in real time, which can easily lead to excessive wear and tear on the probe, rendering it unusable for the current measurement process and resulting in inaccurate measurement results; b) Because the probe's status cannot be monitored in real time, the actual service life of the probe is easily shorter than its theoretical life, resulting in probe waste and hindering cost reduction; c) When determining whether the inaccurate measurement results are caused by the probe morphology, it is also necessary to rule out factors such as the machine and process before finally confirming that the probe morphology is the cause, making the entire elimination process complex.

[0060] In view of this, the present disclosure provides a method for monitoring a probe, comprising: acquiring a target reference value, the target reference value being determined based on a first pattern or first morphology formed by a target process; controlling a target probe to measure the pattern or morphology to be measured formed by the target process to obtain measurement information of the target probe; and replacing the target probe when the difference between the measurement information and the target reference value is less than or equal to a first threshold, wherein the first threshold is greater than or equal to zero. The present disclosure sets a target reference value related to the target process as a reference standard. During the measurement process of the target probe, the measurement information output in real time by the target probe is compared with the target reference value. When the difference between the two is less than or equal to the first threshold, it indicates that the target probe can no longer obtain relatively accurate measurement results in the measurement process corresponding to the target process, and the target probe needs to be replaced to improve the accuracy and reliability of the measurement results of the target probe. Simultaneously, it can also prevent the target probe from being replaced before reaching its service life, thereby improving the utilization rate of the target probe.

[0061] In one exemplary embodiment of this disclosure, such as Figure 1 As shown, Figure 1This is a flowchart illustrating an exemplary embodiment of a method for monitoring a probe, the method comprising the following steps:

[0062] Step S100: Obtain the target reference value, which is determined based on the first pattern or first morphology formed by the target process;

[0063] Step S200: Control the target probe to measure the pattern or morphology to be measured formed by the target process, so as to obtain the measurement information of the target probe.

[0064] Step S300: When the difference between the measurement information and the target reference value is less than or equal to a first threshold, the target probe is replaced, wherein the first threshold is greater than or equal to zero.

[0065] When implementing the steps of the above-described method for monitoring the probe, the semiconductor device containing the probe serves as the execution entity of the method provided in this embodiment. The semiconductor device can be, for example, an AFM device with integrated data processing capabilities. The probe can be a miniature force-sensitive element, and its shape can be a needle-like structure with a pointed tip. When using the probe for measurement, the tip of the probe contacts the structure to be measured. It is understood that the method in the above embodiments can also be applied to a semiconductor device connected to an AFM device, such as a testing machine. The testing machine receives the probe detection data transmitted by the AFM and then processes and analyzes the data.

[0066] The method in this embodiment is used to monitor the probes used for AFM measurement of the pattern or morphology to be measured on semiconductor devices, in order to determine whether the target probe currently in operation is still suitable for monitoring the pattern or morphology to be measured in the target process. If it is no longer suitable for monitoring the pattern or morphology to be measured formed by the target process, it is replaced in time to improve the accuracy of the probe in measuring the pattern or morphology to be measured. The semiconductor devices to be measured include, but are not limited to, circuit boards, wafers, bare dies, packaged chips, etc., and the pattern or morphology to be measured includes, but is not limited to, holes, bumps, trenches, etc.

[0067] In step S100, when obtaining the target reference value, the corresponding target reference value can be obtained from the storage device of the semiconductor device according to the target process corresponding to the currently measured pattern or morphology. For example, if the currently measured pattern is an etched hole, the target reference value corresponding to the etching process is searched from the storage device of the semiconductor device. The target reference value can be the limit value that the probe is allowed to obtain when measuring the first pattern or first morphology formed by the target process, such as the lower limit width value, the lower limit depth value, the lower limit slope value, etc. The first pattern or first morphology can be a pattern or morphology formed by the target process that conforms to preset parameters. The limit values ​​corresponding to different first patterns or first morphologies formed by different processes can be different.

[0068] Depending on the manufacturing process requirements, different process technologies can be selected when different patterns need to be formed. Different process technologies require different levels of precision in the measurement of the resulting first pattern or morphology. For example, in etching processes that form etched holes, higher precision is required when measuring the first morphology of the etched holes using a probe, thus the selection of the target reference value will be more stringent. Conversely, in deposition processes that form sidewall structures, the requirements for measuring the sidewall morphology using a probe are lower, so the precision of the selected target reference value can be relatively more lenient.

[0069] Furthermore, the target reference value can be set based on past experience or calculated using relevant formulas; this embodiment does not impose specific limitations. The target reference value is the measurement result obtained when the width of the probe used to measure the first pattern formed by the target process reaches its maximum value. For example, when measuring a hole, if a probe with a width of A is used to measure the hole's morphology, the output measurement information is considered normal. However, when a probe with a width greater than A is used, the output measurement information becomes abnormal, showing a significant deviation from the desired hole width. In this case, it indicates that the probe width A is the limit value for normal probe use, and the measured hole width when the probe width is A is the target reference value. By obtaining the target reference value corresponding to the target process, it is easier to determine the working state of the target probe when measuring the pattern or morphology formed by the target process, thereby improving the accuracy of the target probe's measurement results.

[0070] In step S200, the target probe is the probe currently measuring the topology or pattern to be measured. The topology or pattern to be measured formed by the target process can include, for example, a raised pattern or a recessed pattern on a semiconductor device. The raised pattern can be, for example, a pattern raised relative to a preset reference plane formed by processes such as etching, chemical vapor deposition (CVD), and physical vapor deposition (PVD). The recessed pattern can be, for example, a pattern recessed relative to a preset reference plane formed by processes such as etching, laser drilling, and mechanical drilling.

[0071] The target probe is controlled to measure the pattern or shape to be measured. For example, a semiconductor device, according to a measurement command, controls the target probe to approach the shape or pattern to be measured formed on the semiconductor device. The target probe contacts the surface of the semiconductor device. When the tip of the target probe sweeps across the surface of the semiconductor device, the contact between the target probe and the surface of the semiconductor device causes the cantilever connected to the target probe to bend. The change of the cantilever is detected by the detection system of the semiconductor device and converted into an electrical signal, which is transmitted to the feedback system and the imaging system. The series of changes of the probe and the cantilever during the scanning measurement process are recorded to measure the pattern or shape to be measured on the surface of the semiconductor device.

[0072] The measurement information of the target probe may include, for example, the width and / or depth values ​​of the concave area output in real time when the target probe measures the shape or pattern to be measured, or the height and / or slope values ​​of the convex area, etc.

[0073] In step S300, the difference between the measured information and the target reference value is calculated, and this difference is compared with a first threshold value, which is greater than or equal to zero. Taking the width of the recessed area as an example, since the target reference value is the acceptable measurement value that can be obtained when the probe width is at its maximum, the larger the probe width is when measuring the hole, the smaller the target reference value. If the width of the target probe (i.e., the probe currently used for measurement) is smaller, the measured hole measurement information is larger; if the measured hole measurement information is smaller, it indicates that the target probe width is larger. Based on the above, the difference between the measured information and the target reference value is compared. If the difference is equal to zero, it means that the measured information and the target reference value are equal, and the target probe has reached the probe limit width for measuring the hole formed by the target process, and needs to be replaced. If the first threshold is a relatively small value greater than zero, when the difference is greater than that value, it means that the width of the target probe is very close to the limit width of the probe that can be measured. In order to improve the accuracy and reliability of the measurement, the target probe can be replaced. It is not necessary to wait until the width of the target probe reaches the limit value before replacing it.

[0074] It should be noted that the first threshold can be a value preset by technicians in the semiconductor equipment. The first threshold can be process-related. When the accuracy requirement of the pattern or morphology formed by some processes is low, the first threshold can be set to a small value, such as 0 or 0.2. When the accuracy requirement of the pattern or morphology formed by some processes is high, the first threshold can be set to a larger value, such as 10 or 20, so that the target probe can be replaced before the width of the target probe reaches the limit value, thereby improving the measurement reliability and accuracy of the target probe.

[0075] During the measurement of the pattern or morphology to be measured by the target probe in the target process, the semiconductor device acquires a first threshold corresponding to the target process for comparison. For example, since the target reference value corresponding to the same target process can include multiple values, and the measurement information acquired by the target probe in the same target process can also include multiple values, the first threshold set for different target reference values ​​and measurement information can also be different.

[0076] For example, when the measurement information is the width value of the recessed area, the first threshold is the required accuracy value for the width of the target probe when measuring the recessed area in the target process; when the measurement information is the depth value of the recessed area, the first threshold is the required accuracy value for the depth of the target probe when measuring the recessed area in the target process, and so on. By comparing the difference between the measurement information and the target reference value with the preset first threshold, when the difference is less than or equal to the first threshold, it indicates that the target probe can no longer be in the normal working state required by the target process during the measurement process corresponding to the target process. That is, the current state of the target probe can no longer obtain relatively accurate measurement results when measuring the morphology or pattern to be measured formed by the target process, and the target probe needs to be replaced to improve the accuracy of the measurement results.

[0077] In some embodiments, when the measurement result output by the target probe in measuring the morphology or pattern formed by the target process is abnormal, by comparing the difference between the measurement information of the target probe corresponding to the measurement result and the target reference value with the first threshold, it can be determined whether the abnormal measurement result is caused by the morphology of the target probe during measurement, thereby quickly investigating the cause of the abnormal measurement result and reducing the complexity of investigating the abnormality.

[0078] In some possible implementations, the method for monitoring the probe further includes:

[0079] Step S400: When the difference between the measured information and the target reference information is greater than the first threshold, control the target probe to continue the measurement.

[0080] In this implementation, the difference between the measured information and the target reference value is compared with a preset first threshold. When the difference is greater than the first threshold, it indicates that during the measurement process corresponding to the target process, the target probe can still be in the normal working state required for measuring the pattern or morphology formed by the target process. The measurement result of the target probe meets the required measurement accuracy for the target process, meaning the target probe can continue to perform measurements without replacement. At this time, the target probe is controlled to continue measuring the semiconductor device under test, avoiding premature replacement of the target probe before it reaches its service life, preventing probe waste, and saving production costs.

[0081] In one exemplary embodiment, the first pattern or first morphology formed by the target process includes a recessed region, such as... Figure 2 As shown, in step S100, obtaining the target reference value includes:

[0082] Step S110: Obtain the target indentation width of the target process;

[0083] Step S120: Obtain the maximum probe width that can be used when measuring the recessed area formed by the target process;

[0084] Step S130: Obtain the target reference value based on the target indentation width and the probe limit width.

[0085] In this embodiment, the first pattern or first morphology formed by the target process includes a recessed region. The recessed region may include patterns such as trenches and vias that are recessed relative to the surface of the semiconductor device. The recessed regions such as trenches and vias may be formed by etching processes or by processes such as laser drilling and mechanical drilling. This disclosure does not limit this.

[0086] In step S110, since parameters such as the width and depth of the recessed pattern are set when forming the recessed pattern in the target process, the recessed pattern formed by the target process achieves the set parameters. The target recess width is the preset width of the recessed pattern. The target recess width of the target process can be obtained, for example, from the device performing the target process.

[0087] In step S120, during use, the probe tip contacts and slides on the surface of the semiconductor device, and there is adhesion between the tip and the semiconductor device surface, causing wear and widening of the probe tip. Furthermore, since the actual recessed area formed by the target process has a certain width, if the probe width is too wide, it can easily lead to the probe measuring a narrower recessed area, resulting in a significant discrepancy between the measurement result and the actual morphology of the recessed area, i.e., abnormal measurement results. In this embodiment, a limit width of the probe is set for measurement of the recessed area formed by the target process; that is, the maximum probe width that has no impact on the measurement result when measuring the recessed area formed by the target process. The limit width can be, for example, a maximum probe width that has no impact on the measurement result obtained through extensive experimental verification, or a weighted coefficient can be set for multiple maximum probe widths from multiple experiments to obtain a weighted limit width, thereby improving the accuracy and reliability of the limit width. The limit width of the probe allowed for measurement of the recessed area formed by the target process can be pre-stored in the semiconductor device and retrieved when measuring the recessed area of ​​the target process.

[0088] In step S130, the target reference value can be the limit value that the probe can obtain in the recessed area when measuring the recessed area formed by the target process. Based on the target recess width of the target process and the probe limit width, the target reference value can be obtained by, for example, by subtracting the target recess width from the probe limit width; or by subtracting the target recess width from the probe limit width obtained by weighted calculation, so as to improve the reliability of the target reference value.

[0089] In some possible implementations, step S130, obtaining a target reference value based on the target indentation width and the probe limit width, includes:

[0090] The target reference value is the difference between the target indentation width and the probe's limit width.

[0091] In this embodiment, reference Figure 3 As shown, Figure 3 This is a schematic diagram of probe measurement of a recessed region. The difference between the target recess width and the probe's maximum width is used as a target reference value to determine the maximum allowable value for the probe during measurement within the recessed region. When the target probe measures a recessed region formed by the target process, the measurement information acquired by the semiconductor device can be the measurement width, such as... Figure 3 As shown, the measurement width of the target probe is determined by the current actual width of the target probe. When the difference between the measurement information and the target reference value is less than or equal to the first threshold, it indicates that the target probe has approached the limit width of the probe that is allowed to be used when measuring in the concave area. If the target probe is continued to be used, it is easy to cause the measurement result of the target probe to be inaccurate. Therefore, the target probe needs to be replaced.

[0092] In an exemplary embodiment, step S120, obtaining the maximum probe width that can be used when measuring the recessed area formed by the target process, includes:

[0093] Step S121: Obtain configuration information. The configuration information is used to characterize the correspondence between the process and the limit width of the probe that can be used when the recessed area formed by the process is measured.

[0094] Step S122: Based on the target process and configuration information, obtain the probe limit width corresponding to the target process.

[0095] In step S121, based on each process involved in forming the recessed region, numerous measurement experiments can be performed on the recessed region formed by each process using probes. By comparing and calculating the obtained measurement data, the maximum probe width allowed for measurement of the recessed region corresponding to each process can be determined, thereby forming configuration information. This configuration information can be stored in a semiconductor device so that it can be retrieved from the semiconductor device when needed.

[0096] In step S122, based on the depression pattern measured by the current target probe, the target process can be identified, the configuration information can be traversed, and the target process can be found from the multiple processes included in the configuration information to obtain the limit width of the probe that can be used when the depression area formed corresponding to the target process is measured.

[0097] In some possible implementations, methods for establishing configuration information include:

[0098] Step S101: Obtain all the processes involved in the wafer sample processing, and the width of the recessed area formed by each process;

[0099] Step S102: Based on each process, control multiple probes with different widths to measure the recessed area formed by the process and obtain multiple sample measurement values.

[0100] Step S103: Based on each process, select the probe width corresponding to the sample measurement value that meets the preset requirements from multiple sample measurement values ​​as the probe limit width.

[0101] Step S104: Establish the correspondence between each process and the probe limit width in the entire process and obtain configuration information.

[0102] In step S101, the semiconductor device being measured is a wafer sample. All processes involved in the wafer sample fabrication are obtained, and each process can form a recessed pattern. It is understood that each process in this embodiment may include processes using the same or different techniques at different manufacturing stages or locations on the wafer. For example, although etching processes are used to form bitline contact holes and metal interconnect trenches, they are different processes.

[0103] The width of the recessed area formed by each process can be obtained, for example, by scanning the width of the recessed area formed by each process using equipment such as a scanning electron microscope, and then transmitted to the semiconductor equipment so that the semiconductor equipment can obtain the recessed width corresponding to each process.

[0104] In step S102, for each process-formed recessed area, multiple probes of different widths are selected to measure the recessed area to obtain multiple sample measurement values. These sample measurement values ​​can be the width measured by the probes in the recessed area of ​​the current process. Probes of different widths can range from the width of unused probe tips to the same width as the recess. For example, if the recess width of process A is 1000 nm and the width of unused probes is 20 nm, the probe widths used to obtain multiple sample measurement values ​​corresponding to this process can include probes with widths between 20 and 1000 nm. The widths of the multiple probes are arranged sequentially; the smaller the difference between the widths of any two adjacent probes, the more sample measurement values ​​are obtained, thus achieving a more accurate limit width. The recessed area of ​​each process is measured using the above method to obtain multiple sample measurement values ​​corresponding to each process.

[0105] In step S103, since the recess width of the recessed area in each process may be different, the accuracy requirements of the probe for the measurement results of each process may also be different according to different measurement needs. The preset requirement for each process can be the accuracy requirement of the measurement results corresponding to that process. For example, in process A, the recess width is 1000nm. When the measurement width is greater than 700nm, it can be considered that the measurement width meets the preset requirement of process A; in process B, the recess width is 500nm. When the measurement width is greater than 420nm, it can be considered that the measurement width meets the preset requirement of process B, and so on. In this embodiment, the multiple sample measurement values ​​corresponding to each process are compared with the preset requirements corresponding to each process. The width of the probe corresponding to the sample measurement value that meets the preset requirements is taken as the limit width of the probe that is allowed to be used when the process is measured. That is to say, the probe corresponding to the limit width of the probe is the probe with the maximum width that has no impact on the measurement result when measuring the recessed area formed by the target process, that is, the probe with the maximum wear level allowed to be used during measurement.

[0106] In some possible implementations, step S103, selecting the probe width corresponding to a sample measurement value that meets preset requirements from multiple sample measurement values ​​as the probe limit width, includes:

[0107] From multiple sample measurements, the probe width corresponding to the smallest sample measurement value that is greater than the sample width is selected as the probe limit width.

[0108] In this embodiment, the sample width is the probe measurement width corresponding to the preset requirements of each process. For example, for process A, the indentation width is 1000nm and its sample width is 700nm. When the sample measurement values ​​greater than 700nm include 705nm, 718nm, 751nm, 843nm, 925nm, and 987nm, the width of the probe corresponding to the sample measurement value with the smallest value of 705nm is selected as the probe limit width. This is to make the most of the probe with the maximum wear level that meets the accuracy requirements of the measurement results, thereby reducing the frequency of probe replacement and reducing measurement costs while meeting the measurement requirements.

[0109] In step S104, each process in the entire process is mapped to the probe limit width of that process, and a correspondence between each process and the probe limit width of that process is established. For example, this can be done by establishing a mapping chart between processes and probe limit widths, setting a mapping function between processes and probe limit widths, etc., to obtain configuration information.

[0110] In one exemplary embodiment, such as Figure 4 As shown, the method for detecting the probe also includes:

[0111] Step S410: When the difference between the measurement information and the target reference value is less than or equal to the first threshold, obtain the measurement process information of the target probe;

[0112] Step S420: If the measured process information meets the preset conditions, replace the target probe.

[0113] In this embodiment, when the difference between the measurement information and the target reference value is less than or equal to the first threshold, it may be due to equipment failure or measurement process error. At this time, the measurement process information is obtained to further confirm whether the measurement result is abnormal due to measurement process error. This avoids premature replacement of the target probe due to abnormal measurement result caused by measurement process error, further improves the accuracy of the target probe replacement time, and avoids unnecessary cost losses.

[0114] For example, the measurement process information may include the movement direction of the target probe during measurement, or the positioning position of the target probe on the recessed or raised area during measurement, etc. The preset conditions of the measurement process information may be parameters preset by the technician in the semiconductor equipment when the probe measures the target process to form the pattern or shape to be measured. When the measurement process information of the target probe meets the preset conditions, it indicates that the measurement process of the target probe is normal. The difference between the measurement information and the target reference value is less than or equal to a first threshold because the probe can no longer perform the measurement of the target process. At this time, the target probe is replaced.

[0115] In some possible implementations, the method for detecting the probe further includes:

[0116] Step S510: If the measurement process information does not meet the preset conditions, adjust the measurement process information;

[0117] Step S520: Control the target probe to measure the target pattern or morphology formed by the target process again based on the adjusted measurement process information.

[0118] In this embodiment, when the measurement process information does not meet the preset conditions, it indicates that the measurement process of the target probe is abnormal. The difference between the measurement information and the target reference value is less than or equal to a first threshold due to the abnormal measurement process information. At this time, the measurement process information of the target probe is adjusted to meet the preset conditions. The target probe is then controlled to measure the test pattern or morphology formed by the target process again based on the adjusted measurement process information that meets the preset conditions, so as to obtain the measurement information obtained after adjusting the measurement process information. The difference between the measurement information obtained after adjusting the measurement process information and the target reference value is compared with the first threshold to further determine whether the target probe needs to be replaced, so as to avoid premature replacement of the target probe due to the abnormal measurement process information and avoid unnecessary cost losses.

[0119] In some possible implementations, step S410 involves acquiring measurement process information for the target probe, including:

[0120] Step S411: Acquire image information of the measurement process of the target probe forming the pattern or morphology to be measured in the target process;

[0121] Step S412: Obtain measurement process information based on image information.

[0122] In this embodiment, image information of the measurement process of the target probe on the pattern or morphology to be measured formed by the target process can be acquired using an image acquisition device. The image acquisition device can be, for example, a scanning microscope. The image information can include, for example, the positional relationship between the target probe and the pattern or morphology to be measured formed by the target process at a certain moment, or the positional relationship between the target probe and the pattern or morphology to be measured formed by the target process over a certain time period. The image acquisition device transmits the acquired image information to a semiconductor device. Based on the acquired image information, the device acquires measurement process information such as the positioning status of the pattern or morphology to be measured and the direction of probe movement during the measurement process, in order to determine whether the measurement process information meets preset conditions.

[0123] In some possible implementations, the target reference value is greater than the probe limit width that is allowed to be used when the first pattern or first morphology formed by the target process is measured.

[0124] In this embodiment, the relationship between different target reference values ​​and probe limit widths in each process of the entire process was verified and analyzed. For example, if the recess width of the first pattern or first morphology formed by the target process is 800 nm, and the probe width is 300 nm, the probe output measurement result is 500 nm. At this time, the height of the recessed area corresponding to the probe measurement result does not fluctuate, meaning the accuracy of the probe measurement information is high. When the probe width is 400 nm, the probe output measurement result is 400 nm. At this time, the height of the recessed area corresponding to the probe measurement result has fluctuated significantly, meaning the accuracy of the probe measurement information is poor. In this case, the probe width corresponding to this measurement result is too wide and cannot be used when measuring the first pattern or first morphology formed by the target process; that is, this probe width cannot be used as the probe limit width. In other words, for this target process, the probe limit width should be less than 400 nm. Since the target reference value is the difference between the target recess width and the probe limit width, the target reference value should be greater than 400 nm. That is, the target reference value is greater than the probe limit width that can be used when the first pattern or first morphology formed by the target process is measured, so as to ensure the accuracy of the measurement results of the target probe.

[0125] In one exemplary embodiment, a method for monitoring a probe includes:

[0126] Step S610: Record the working life of the target probe. The working life is the working time from the start of working of the target probe to the time when it is replaced.

[0127] Step S620: Record the number of wafers measured by the target probe during its working lifetime;

[0128] Step S630: Establish the correspondence between the number of wafers, the working time of the target probe, and the target process, and generate early warning reference information.

[0129] In this embodiment, the moment the target probe begins operation after being mounted on the semiconductor device and the moment it is replaced are recorded. The operating time of the target probe from the moment it begins operation to the moment it is replaced is recorded as the target probe's working lifespan. Simultaneously, the number of wafers measured by the target probe during its working lifespan is also recorded. Since different processes during wafer fabrication result in different morphologies or patterns to be measured, the wear of the probes also varies when measuring morphologies or patterns formed by different processes. The working lifespan and the number of wafers measured for each probe in measuring the pattern formed by each process of the wafer are recorded. Based on the recorded working lifespans of multiple probes and the number of wafers measured, the correspondence between the number of wafers, the probe's operating time, and the process is determined as early warning reference information.

[0130] In some possible implementations, the method for monitoring the probe further includes:

[0131] Step S640: Monitor the working time of the target probe;

[0132] Step S640: Based on the working time of the target probe and the early warning reference information, issue an early warning message before the target probe needs to be replaced.

[0133] In this embodiment, when measuring the pattern or morphology to be measured formed by the target process, the working time of the target probe is monitored, or the number of wafers currently measured by the target probe is monitored. Based on the working time of the target probe, and / or the number of wafers currently measured by the target probe, and the warning reference information, it is determined whether a warning message needs to be issued. When the working time of the target probe is close to the working life in the warning reference information, and / or the number of wafers currently measured by the target probe is close to the number of wafers in the warning reference information, it indicates that the target probe is approaching a state where it cannot work normally. At this time, a warning message is issued. The warning message can be an audible alert, or a warning pop-up window can be displayed on the semiconductor equipment's operating panel, etc., to remind technicians to pay attention to replacing the target probe before it needs to be replaced.

[0134] The overall workflow of the technical solution provided in this disclosure is described below. (Reference) Figure 5 As shown, Figure 5 This is a schematic flowchart of a method for monitoring a probe, provided as an exemplary embodiment of the present disclosure.

[0135] Step S1: Obtain the target reference value, which is determined based on the first pattern or first morphology formed by the target process.

[0136] Step S2: Control the target probe to measure the pattern or morphology to be measured formed by the target process in order to obtain the measurement information of the target probe.

[0137] Step S3: Determine whether the difference between the measured information and the target reference value is less than or equal to the first threshold.

[0138] If yes, it means that the target probe can no longer accurately measure the morphology or pattern to be measured formed by the target process, and proceed to step S5; if no, proceed to step S4.

[0139] Step S4: Control the target probe to continue the measurement.

[0140] Step S5: Obtain the measurement process information of the target probe.

[0141] Step S6: Determine whether the measured process information meets the preset conditions;

[0142] If the measurement process information is normal, proceed to step S7; if the measurement process information is abnormal, proceed to step S8.

[0143] Step S7: Replace the target probe.

[0144] Step S8: Adjust the measurement process information and control the target probe to measure the target pattern or morphology formed by the target process again based on the adjusted measurement process information.

[0145] Figure 6 This is a block diagram illustrating a semiconductor device, namely semiconductor device 600, according to an exemplary embodiment. Semiconductor device 600 can be provided as a test bench or terminal device, and semiconductor device 600 can be the AFM device described in the above exemplary embodiment of this disclosure. (Refer to...) Figure 6 The semiconductor device 600 includes a processor 601, the number of which can be set to one or more as needed. The semiconductor device 600 also includes a memory 602 for storing instructions executable by the processor 601, such as application programs. The number of memories 602 can be set to one or more as needed. The stored application programs can be one or more. The processor 601 is configured to execute instructions to perform the aforementioned method for monitoring the probe.

[0146] Those skilled in the art will understand that embodiments of this disclosure can be provided as methods, apparatus (devices), or computer program products. Therefore, this disclosure can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this disclosure can take the form of a computer program product implemented on one or more computer-usable storage media containing computer-usable program code. Computer storage media include volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data), including but not limited to RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and is accessible by a computer. Furthermore, it is known to those skilled in the art that communication media typically contain computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and can include any information delivery medium.

[0147] In an exemplary embodiment, a non-transitory computer-readable storage medium including instructions is provided, such as a memory 602 including instructions, which can be executed by a processor 601 of a semiconductor device 600 to perform the method for monitoring a probe described above. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0148] In exemplary embodiments of this disclosure, a non-transitory computer-readable storage medium is provided, which stores computer program instructions. The non-transitory computer-readable storage medium can be disposed in a semiconductor device, and when the computer program instructions are invoked by the processor of the semiconductor device, the semiconductor device is able to execute the method for monitoring probes provided in the exemplary embodiments of this disclosure.

[0149] This disclosure is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (devices), and computer program products according to embodiments of this disclosure. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create a machine for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0150] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0151] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0152] In this disclosure, the terms “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that an article or device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such an article or device. Without further limitation, an element defined by the phrase “comprising…” does not exclude the presence of additional identical elements in the article or device that includes said element.

[0153] Although preferred embodiments of the present disclosure have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this disclosure.

[0154] Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, the intent of this disclosure also includes these modifications and variations.

Claims

1. A method for monitoring a probe, characterized in that, The method for monitoring the probe includes: Obtain a target reference value, which is determined based on a first pattern or first morphology formed by the target process; The target probe is controlled to measure the pattern or morphology to be measured formed by the target process, so as to obtain the measurement information of the target probe. The measurement information of the target probe includes the width value of the concave region output by the target probe in real time when measuring the morphology or pattern to be measured. When the difference between the measured information and the target reference value is less than or equal to a first threshold, the target probe is replaced, wherein the first threshold is greater than or equal to zero; in, The first pattern or first morphology formed by the target process includes a recessed region, and obtaining the target reference value includes: Obtain the target recess width of the target process; The maximum allowable probe width is obtained when the recessed area formed by the target process is measured. The target reference value is obtained based on the target indentation width and the probe limit width; Obtaining the maximum allowable probe width when measuring the recessed area formed by the target process includes: Obtain configuration information, which is used to characterize the correspondence between the process and the limit width of the probe that can be used when measuring the recessed area formed by the process; Based on the target process and the configuration information, the probe limit width corresponding to the target process is obtained; Based on the target indentation width and the probe limit width, the target reference value is obtained, including: The target reference value is the difference between the target indentation width and the probe limit width.

2. The method for monitoring a probe according to claim 1, characterized in that, The method for monitoring the probe further includes: When the difference between the measured information and the target reference value is greater than the first threshold, the target probe is controlled to continue measurement.

3. The method for monitoring a probe according to claim 1, characterized in that, The method for establishing the configuration information includes: Obtain all processes involved in the wafer sample processing, and the recess width of the recessed region formed by each process; Based on each of the aforementioned processes, multiple probes of different widths are controlled to measure the recessed area formed by the process, thereby obtaining multiple sample measurement values. Based on each of the aforementioned processes, the width of the probe corresponding to the sample measurement value that meets the preset requirements is selected from a plurality of the aforementioned sample measurement values ​​as the probe limit width; Establish the correspondence between each of the aforementioned processes and the probe's limit width to obtain the configuration information.

4. The method for monitoring a probe according to claim 3, characterized in that, The probe width is selected from the plurality of corresponding sample measurements that meet preset requirements as the probe limit width, including: From a plurality of sample measurements, the width of the probe corresponding to the smallest sample measurement value that is greater than the sample width is selected as the probe limit width.

5. The method for monitoring a probe according to claim 1, characterized in that, The method for monitoring the probe further includes: When the difference between the measurement information and the target reference value is less than or equal to the first threshold, the measurement process information of the target probe is obtained; If the measurement process information meets the preset conditions, the target probe is replaced.

6. The method for monitoring a probe according to claim 5, characterized in that, The method for monitoring the probe further includes: If the measurement process information does not meet the preset conditions, the measurement process information shall be adjusted. The target probe is controlled to measure the pattern or morphology to be measured formed by the target process again based on the adjusted measurement process information.

7. The method for monitoring a probe according to claim 5, characterized in that, Obtaining the measurement process information of the target probe includes: Collect image information of the measurement process of the target probe on the target process forming the pattern or morphology to be measured; Based on the image information, the measurement process information is obtained.

8. The method for monitoring a probe according to claim 1, characterized in that, The target reference value is greater than the probe limit width allowed when the first pattern or first morphology formed by the target process is measured.

9. The method for monitoring a probe according to claim 1, characterized in that, The method for monitoring the probe includes: Record the working life of the target probe, which is the working time from the start of the working time of the target probe to the time of replacement; Record the number of wafers measured by the target probe during its operational lifetime; Establish the correspondence between the number of wafers, the working time of the target probe, and the target process, and generate early warning reference information.

10. The method for monitoring a probe according to claim 9, characterized in that, The method for monitoring the probe further includes: Monitor the operating time of the target probe; Based on the working duration of the target probe and the early warning reference information, an early warning message is issued before the target probe needs to be replaced.

11. A semiconductor device, characterized in that, The semiconductor device is used to implement the method for monitoring a probe as described in any one of claims 1 to 10.

12. A non-transitory computer-readable storage medium, characterized in that, The storage medium stores computer program instructions that, when invoked by a processor of a semiconductor device, enable the semiconductor device to perform the method for monitoring a probe as described in any one of claims 1 to 10.

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