Photoresist, method for patterning the same, and method for manufacturing display substrate

Abstract

The application provides a photoresist, a method for patterning the photoresist, and a method for manufacturing a display substrate. The photoresist comprises target magnetic nanoparticles and an organic photoresist. The target magnetic nanoparticles have magnetism, and the target magnetic nanoparticles target adsorb and wrap the organic photoresist, so that the photoresist forms a preset pattern along with the movement of the target magnetic nanoparticles under the action of an external magnetic field. The photoresist does not need to use a mask plate for exposure, and the precision of the photoresist pattern can be improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a photoresist and a method for patterning the same, and a method for preparing a display substrate. Background Technology

[0002] In recent years, the photoresist technology used in liquid crystal display (LCD) devices involves the process of photoresist exposure, development, and etching to transfer the pattern on a mask onto a thin film or wafer, forming a geometric pattern corresponding to the mask.

[0003] In LCD display devices, the photoresist patterning process often suffers from low precision and limited pattern control. To address these issues, current research focuses primarily on photoresist fabrication processes. To obtain the desired photoresist pattern, the appropriate fabrication process and material formulation are adjusted to achieve the expected results.

[0004] However, in the existing technology, a photomask is used in the exposure process. The distance from the UV light source to the photomask and from the photomask to the substrate is limited by the machine tool, which greatly limits the pattern accuracy of the photoresist and makes it impossible to improve. Summary of the Invention

[0005] This application provides a photoresist and a method for patterning it, as well as a method for fabricating a display substrate, aiming to solve the problem in the prior art where the limited distance between the mask and the substrate and the light source respectively leads to a significant limitation on the accuracy of the photoresist pattern, thus preventing its improvement.

[0006] To address the aforementioned technical problems, the first technical solution provided in this application is: to provide a photoresist. The photoresist comprises: targeted magnetic nanoparticles and organic photoresist; wherein the targeted magnetic nanoparticles are magnetic, and the targeted magnetic nanoparticles target and adsorb and encapsulate the organic photoresist, so that under the action of an external magnetic field, the photoresist forms a preset pattern as the targeted magnetic nanoparticles move.

[0007] The targeted magnetic nanoparticles include magnetic nanoparticles and surface modifiers and dispersants coated on the magnetic nanoparticles, so that the targeted magnetic nanoparticles have targeted adsorption properties, enabling the targeted magnetic nanoparticles to target and adsorb and encapsulate the organic photoresist.

[0008] The magnetic nanoparticles are iron oxide nanoparticles, iron-nickel nanoparticles, or a mixture of iron oxide nanoparticles and iron-nickel nanoparticles; the mass ratio of the targeted magnetic nanoparticles to the organic photoresist is 1:100 to 1:1000; and the particle size range of the targeted magnetic nanoparticles is 10 to 75 nm.

[0009] To address the aforementioned technical problems, the second technical solution provided in this application is: a method for patterning photoresist. The method includes:

[0010] Provide substrate;

[0011] A photoresist is coated on the substrate; wherein the photoresist is the photoresist described in the above technical solution;

[0012] A patterned magnetic field is provided, which causes the photoresist to form a preset pattern under the action of the patterned magnetic field;

[0013] The photoresist forming the preset pattern is cured.

[0014] The step of coating the substrate with photoresist includes:

[0015] The substrate is placed on an electromagnetic control platform; wherein, the electromagnetic control platform includes an electromagnetic control module, an electromagnetic unit module, a substrate platform, and a conveying system; the electromagnetic unit module includes multiple electromagnetic basic units; the electromagnetic control module is used to control the electromagnetic unit module to form different patterned magnetic fields; the substrate platform is used to support the substrate; the conveying system is used to convey the substrate to the substrate platform;

[0016] The photoresist is coated onto the substrate;

[0017] The electromagnetic control module is activated to control multiple electromagnetic basic units to form a uniform magnetic field, thereby forming a flat photoresist layer on the substrate.

[0018] The step of providing a patterned magnetic field, causing the photoresist to form a preset pattern under the action of the patterned magnetic field, includes:

[0019] The electromagnetic control module controls multiple electromagnetic basic units to form the patterned magnetic field, so that the photoresist layer forms the preset pattern under the action of the patterned magnetic field;

[0020] The electromagnetic basic units are respectively disposed on the side of the substrate platform away from the substrate; or, the electromagnetic basic units are respectively disposed on the side of the substrate platform away from the substrate and the side of the substrate away from the substrate platform, so that the electromagnetic unit module forms a three-dimensional magnetic field.

[0021] The electromagnetic control platform also includes a recycling system, which includes a recycling tank located below one side of the substrate platform.

[0022] After the step of providing a patterning magnetic field, causing the photoresist to form a preset pattern under the action of the patterning magnetic field, the method further includes:

[0023] The substrate platform is tilted toward the recycling tank at a preset angle so that the substrate is tilted at the preset angle, allowing the photoresist outside the preset pattern to flow into the recycling tank.

[0024] The step prior to the step of curing the photoresist that forms the preset pattern includes:

[0025] The photoresist on which the preset pattern is formed is pre-baked;

[0026] The photoresist after pre-baking is then exposed to light.

[0027] The substrate is subjected to a development process to remove the photoresist remaining outside the preset pattern;

[0028] The step of curing the photoresist that forms the preset pattern includes:

[0029] The photoresist that forms the preset pattern is heated to solidify and shape the photoresist.

[0030] To address the aforementioned technical problems, the third technical solution provided in this application is: a method for fabricating a display substrate. The fabrication method includes:

[0031] Provide substrates;

[0032] The photoresist patterning method described above is used to fabricate black matrices, color resist layers, and spacers with different preset patterns on the substrate.

[0033] The black matrix is ​​formed on one side of the substrate, the color resist layer is formed on the side of the black matrix away from the substrate, and the spacer is formed on the side of the color resist layer away from the black matrix.

[0034] The preparation method further includes:

[0035] A transparent planarization layer is fabricated on the substrate using an electromagnetic control platform. The transparent planarization layer is formed between the color resist layer and the spacer, and covers the color resist layer.

[0036] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides a photoresist, a method for patterning the photoresist, and a method for fabricating a display substrate. The photoresist comprises targeted nanoparticles and organic photoresist. By targeting and adsorbing the organic photoresist with magnetic nanoparticles, a polymer microsphere system is formed. In this system, the targeted magnetic nanoparticles and organic photoresist mutually adsorb and encapsulate each other, causing them to fuse together. The magnetic nanoparticles can move along with the adsorbed organic photoresist. Furthermore, by making the magnetic nanoparticles magnetic, they can move to corresponding positions under the influence of an external magnetic field. The photoresist can then form a preset pattern accordingly with the movement of the targeted magnetic nanoparticles. This allows the photoresist patterning process to form a preset pattern without the need for a photomask, saving photomask costs, simplifying the process, and, through external magnetic field control, eliminating the precision limitations of the photomask process, effectively improving the precision of the photoresist pattern. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.

[0038] Figure 1 This is a schematic flowchart of a photoresist patterning method provided in one embodiment of this application;

[0039] Figure 2 yes Figure 1 A flowchart illustrating one embodiment of step S2 is provided;

[0040] Figure 3 It corresponds Figure 2 A schematic diagram of the process flow;

[0041] Figure 4 This is a flowchart of the method for patterning photoresist provided in the second embodiment of this application;

[0042] Figure 5 It corresponds Figure 4 A schematic diagram of the process flow after the intermediate coating adhesive is applied;

[0043] Figure 6 This is a schematic diagram of the structure of an electromagnetic control platform provided in another embodiment of this application;

[0044] Figure 7 yes Figure 4 A flowchart illustrating step S6 in the middle section;

[0045] Figure 8This is a schematic flowchart of a method for preparing a display substrate according to an embodiment of this application;

[0046] Figure 9 Through Figure 8 A schematic diagram of the structure of the display substrate prepared by the method provided in the embodiments;

[0047] Figure 10 This is a schematic diagram of the structure of another display substrate prepared by a preparation method provided in another embodiment.

[0048] Figure label:

[0049] 10-Electromagnetic control platform; 11-Electromagnetic control module; 12-Electromagnetic unit module; 121-Electromagnetic basic unit; 13-Substrate platform; 14-Recycling tank; 20-Substrate; 21-Substrate substrate; 30-Photoresist; 31-Black matrix; 32-Color resist layer; 321-First color resist layer; 322-Second color resist layer; 323-Third color resist layer; 33-Spacer; 331-Main spacer pillar; 332-Secondary spacer pillar; 34-Transparent planarization layer; 100-Display substrate. Detailed Implementation

[0050] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0051] In the following description, specific details such as particular system architectures, interfaces, and technologies are presented for illustrative purposes rather than for limiting purposes, in order to provide a thorough understanding of this application.

[0052] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0053] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0054] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0055] This application provides a photoresist that can be used in the fabrication process of a display substrate to form a patterned structure. Specifically, the display substrate can be an array substrate or a color filter substrate. The photoresist comprises targeted magnetic nanoparticles and an organic photoresist. The organic photoresist can be any type of existing organic photoresist, such as organic photoresist for creating black matrices, organic photoresist for creating color resist layers of various colors, or transparent organic photoresist. The targeted magnetic nanoparticles are magnetic and target and adsorb onto the organic photoresist. That is, the targeted magnetic nanoparticles target, locate, adsorb, and encapsulate the resin monomers in the organic photoresist. The targeted magnetic nanoparticles are organically integrated into the organic photoresist to form a micromechanical system, so that under the action of an external magnetic field, the photoresist forms a preset pattern as the targeted magnetic nanoparticles move.

[0056] Specifically, the targeted magnetic nanoparticles include magnetic nanoparticles and surface modifiers and dispersants coated on the magnetic nanoparticles, so as to enable the targeted magnetic nanoparticles to have targeted adsorption properties, so that the targeted magnetic nanoparticles can target and adsorb and encapsulate the organic photoresist.

[0057] The magnetic nanoparticles are nanoscale particles with superparamagnetism and sensitive response to magnetic fields, ranging in size from a few nanometers to tens of nanometers, such as 5nm, 7nm, 9nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 44nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 72nm, 74nm, and 75nm, etc., which can be set according to actual needs. Specifically, the magnetic nanoparticles can be iron(III) oxide (Fe3O4) nanoparticles, nickel-iron (NiFe) nanoparticles, or a mixture of iron(III) oxide (Fe3O4) nanoparticles and nickel-iron (NiFe) nanoparticles, or nanoparticles made of other magnetic compounds, or a combination of several magnetic nanoparticles, which can be selected and set according to actual needs.

[0058] The magnetic nanoparticles are coated with surface modifiers and dispersants to functionalize their surfaces, forming core-shell structured targeted magnetic nanoparticles. This gives them targeted adsorption properties, allowing them to target and position the monomers of organic photoresist, adsorbing and encapsulating the photoresist to form a fused micromechanical system. Furthermore, due to the high sensitivity of the targeted magnetic nanoparticles to external magnetic fields, they move accordingly when an external magnetic field is applied to the photoresist, forming a pattern corresponding to the external magnetic field. Because of the surface modification function of the targeted magnetic nanoparticles, they adsorb the organic photoresist, allowing the photoresist to also form a predetermined pattern as the targeted magnetic nanoparticles move. Specifically, a corresponding external magnetic field can be designed according to the specific shape of the desired predetermined pattern, so that the photoresist forms the corresponding predetermined pattern under the influence of the pre-set external magnetic field.

[0059] Specifically, the particle size range of the targeted magnetic nanoparticles formed after surface functionalization modification is 10–75 nm. The specific size can be set according to the specific requirements of the photoresist, such as the adsorption capacity of the targeted magnetic nanoparticles and the precision requirements of the photoresist pattern. In specific embodiments, the particle size of the targeted magnetic nanoparticles can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 44 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 72 nm, 74 nm, 75 nm, etc., but is not limited to these. The above particle size values ​​are merely exemplary and do not represent that the particle size of the targeted magnetic nanoparticles can only be the above values.

[0060] Specifically, the mass ratio of targeted magnetic nanoparticles to organic photoresist in the photoresist is 1:100 to 1:1000. The specific ratio can be set according to the requirements of the photoresist's sensitivity to external magnetic fields, viscosity, flow rate, or transparency. For example, when the sensitivity requirement of the photoresist to external magnetic fields is not too high, the mass ratio of targeted magnetic nanoparticles to organic photoresist can be set to a smaller ratio, such as 1:800, 1:900, or 1:1000. When the sensitivity requirement is moderate, the mass ratio can be set in the middle range, such as 1:400, 1:500, 1:600, or 1:700. When the sensitivity requirement is high, the mass ratio can be set to a larger ratio, such as 1:100, 1:200, or 1:300. Of course, the above ratio is only an example and does not mean that the mass ratio of targeted magnetic nanoparticles to organic photoresist can only be the above values.

[0061] In this embodiment, the photoresist includes targeted nanoparticles and organic photoresist. By targeting and adsorbing the organic photoresist with magnetic nanoparticles, a polymer microsphere system is formed. In the system, the targeted magnetic nanoparticles and organic photoresist adsorb and encapsulate each other, causing them to fuse together. The magnetic nanoparticles can move along with the adsorbed organic photoresist. Furthermore, by making the magnetic nanoparticles magnetic, they can move to the corresponding position under the action of an external magnetic field. The photoresist can form a preset pattern accordingly as the targeted magnetic nanoparticles move. This allows the photoresist patterning process to form a preset pattern without the use of a mask, which not only saves the cost of the mask and simplifies the process, but also, through external magnetic field control, is no longer limited by the precision of the mask process, effectively improving the precision of the photoresist pattern.

[0062] In specific implementations, the method for forming patterns using the above-described photoresist will not be described in detail here; please refer to the detailed description below.

[0063] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0064] Please see Figure 1 , Figure 1 This is a flowchart illustrating the photoresist patterning method provided in the first embodiment of this application. This embodiment provides a method for patterning photoresist 30, which can be used to fabricate a display substrate 100 (see...). Figure 9Specifically, it can be used to prepare film structures on display substrate 100 such as black matrix 31, color resist layer 32, spacer 33, and transparent planarization layer 34, or it can be used to prepare driving substrate. Specifically, it can be used to prepare film layers on driving substrate that need to be patterned using photoresist 30, such as metal trace layer, pixel isolation structure layer, etc.

[0065] In this embodiment, the photoresist is the photoresist described in the above embodiments, which is capable of forming a preset pattern under the influence of an external magnetic field. Specifically, the photoresist patterning method includes:

[0066] S1: Provides a substrate;

[0067] S2: Coat the substrate with photoresist; wherein the photoresist is the photoresist involved in the above embodiments;

[0068] S3: Provides a patterned magnetic field, which enables the photoresist to form a preset pattern under the action of the patterned magnetic field;

[0069] S4: Curing the photoresist that forms the preset pattern.

[0070] The substrate provided may be a glass substrate, which may consist of only a substrate or may include a substrate and various film structures disposed on the substrate. The film structures may be metal layers, semiconductor layers, ITO layers, alignment layers, etc.

[0071] Before applying photoresist, the substrate needs to be pretreated by cleaning and drying the front end. After pretreatment, photoresist is applied to the substrate using a coating device located above it, completing the photoresist coating process.

[0072] Please see Figure 2 and Figure 3 , Figure 2 yes Figure 1 A flowchart illustrating one embodiment of step S2 is provided. Figure 3 It corresponds Figure 2 A schematic diagram of the process flow. Specifically, step S2 includes the following steps:

[0073] S21: Place the substrate 20 on the electromagnetic control platform 10;

[0074] S22: Apply photoresist 30 onto substrate 20;

[0075] S23: Turn on the electromagnetic control module 11 to control multiple electromagnetic basic units 121 to form a uniform magnetic field, so that the photoresist 30 forms a flat photoresist layer on the substrate 20.

[0076] like Figure 3As shown, in this embodiment, the electromagnetic control platform 10 includes an electromagnetic control module 11, an electromagnetic unit module 12, a substrate platform 13, and a transmission system. The electromagnetic unit module 12 includes multiple electromagnetic basic units 121; the electromagnetic control module 11 controls the multiple electromagnetic basic units 121 to form different patterned magnetic fields; the substrate platform 13 carries the substrate 20; and the transmission system transports the substrate 20 to the substrate platform 13.

[0077] Specifically, the conveying system can be connected to the substrate platform 13, the cleaning and drying platform, the exposure device, the developing device, etc., to complete the substrate 20 conveying work in each process step. In step S21, the substrate 20 can be placed on the substrate platform 13 by the conveying system or manually; then, the photoresist 30 is coated onto the substrate 20 by the coating device located above the substrate 20. In this step, only a preset thickness of photoresist 30 needs to be coated on the substrate 20. The process requirements for coating uniformity and coating amount are not high. Therefore, compared with the traditional coating process, the coating method in this embodiment can save about one-third of the coating time, and can also reduce the manpower and material resources of the experiment.

[0078] Furthermore, after coating the photoresist 30, the electromagnetic control module 11 is turned on, so that the electromagnetic control module 11 controls multiple electromagnetic basic units 121 to form a uniform magnetic field. Specifically, the multiple electromagnetic basic units 121 are arranged in an array below the substrate platform 13. At this time, the substrate 20 is located on the substrate platform 13, so the multiple electromagnetic basic units 121 are arranged in an array below the substrate 20, and a uniform magnetic field is applied to the photoresist 30 on the substrate 20. Under the action of the uniform magnetic field, the photoresist 30 gradually tends to flatten, forming a flat photoresist layer.

[0079] Please see Figure 4 and Figure 5 , Figure 4 This is a flowchart of the method for patterning photoresist provided in the second embodiment of this application. Figure 5 It corresponds Figure 4 A schematic diagram of the process flow after the intermediate coating. In this embodiment, step S3 specifically includes:

[0080] S31: The electromagnetic control module 11 controls multiple electromagnetic basic units 121 to form a patterned magnetic field, so that the photoresist layer forms a preset pattern under the action of the patterned magnetic field.

[0081] In this embodiment, multiple electromagnetic basic units 121 are respectively disposed on the side of the substrate platform 13 away from the substrate 20, that is, below the substrate platform 13. When the substrate 20 is placed on the substrate platform 13, the multiple electromagnetic basic units 121 are respectively located below the substrate 20 and arranged in an array. Alternatively, the electromagnetic basic units 121 can be designed and arranged according to the shape of the substrate 20, the required magnetic field, etc. Specifically, the multiple electromagnetic basic units 121 are controlled by the electromagnetic control module 11 to form a patterned magnetic field, so that the photoresist layer forms a preset pattern under the action of the patterned magnetic field.

[0082] Please see Figure 6 , Figure 6 This is a schematic diagram of the structure of an electromagnetic control platform provided in another embodiment of this application. In this embodiment, multiple electromagnetic basic units 121 are respectively disposed on the side of the substrate platform 13 away from the substrate 20 and on the side of the substrate 20 away from the substrate platform 13, that is, multiple electromagnetic basic units 121 are disposed on both the upper and lower sides of the substrate 20, so that the electromagnetic unit module 12 forms a three-dimensional magnetic field. Specifically, when it is necessary to precisely control the upper and lower bottom structures of the photoresist 30 pattern, for example, the black matrix 31 (see... Figure 9 When preparing a similar structure, such as the top corner of the photoresist 30 and the step of the spacer 33, multiple electromagnetic basic units 121 can be set up in this way. Since the magnetic field orientation of different electromagnetic basic units 121 is different, a three-dimensional patterned magnetic field is formed by superimposing magnetic fields from multiple directions, so that the photoresist 30 can form a spatial three-dimensional preset pattern to meet the accuracy requirements.

[0083] In practical applications, the electromagnetic basic unit 121 can reach the micrometer level, so that the range and height of the patterned magnetic field formed are the desired pattern as designed in advance, including the critical dimension (CD) size and film thickness. Under the action of this patterned magnetic field (attraction and / or repulsion), the targeted magnetic nanoparticles in the photoresist 30 adsorb the organic photoresist 30 raw liquid at the desired position onto the substrate 20, thereby forming a preset pattern in the photoresist 30. The precision of the critical dimension and thickness of the preset pattern can reach the micrometer or nanometer level, which is even higher.

[0084] Meanwhile, a finely patterned magnetic field is formed by the electromagnetic control platform 10, which enables the photoresist 30 to form a preset pattern under the action of the patterned magnetic field. Unlike the traditional photoresist 30 patterning process, which requires exposure using a mask to pattern the photoresist 30, this process, by applying a patterned magnetic field to form a preset pattern on the photoresist 30, eliminates the need for a mask. This avoids the error between the actual and preset values ​​of the key dimensions and thickness of the photoresist 30 pattern caused by the mask, and also saves on the cost of the mask.

[0085] like Figure 5 As shown, in this embodiment, excess photoresist outside the pattern can be recycled. Specifically, the electromagnetic control platform 10 also includes a recycling system, which includes a recycling tank 14 disposed on the lower side of the substrate platform 13 for recycling the photoresist 30 outside the pattern. Specifically, after step S3, the photoresist 30 outside the pattern is recycled, and the specific steps include:

[0086] S5: Adjust the substrate platform 13 to tilt towards the recycling tank 14 to a preset angle so that the substrate 20 is tilted to the preset angle, so that the photoresist 30 outside the preset pattern flows into the recycling tank 14.

[0087] Specifically, utilizing the fluidity of the photoresist 30, the substrate platform 13 is tilted to a preset angle. The preset angle can be set according to the fluidity of the photoresist 30. For example, in this embodiment, the solid content of the photoresist 30 is approximately 15%, the viscosity is approximately 2.6 mPa·s, and the preset angle is approximately 5° to 10°, causing the substrate 20 to tilt to the preset angle. Since the photoresist 30 outside the pattern is outside the patterning magnetic field and is not subject to the attractive force of the patterning magnetic field, it flows to the recycling tank 14 under gravity. The substrate platform 13 can be adjusted mechanically or automatically; there are no specific limitations on this. Compared to traditional processes, this embodiment saves approximately two-thirds of the photoresist 30 usage by recycling the photoresist 30 outside the pattern, effectively reducing costs.

[0088] After recovering the photoresist 30 outside the pattern, the remaining photoresist 30 on the surface of the substrate 20 needs to be cleaned with distilled water. At this point, the initial patterning of the photoresist 30 is completed. Next, exposure and development processes are required to fix the photoresist 30 forming the preset pattern onto the substrate 20.

[0089] Please see Figure 7 , Figure 7 yes Figure 4 A schematic diagram of step S6. In this embodiment, the photoresist patterning method further includes:

[0090] S6: Fix the photoresist 30 with the preset pattern onto the substrate 20.

[0091] S6 specifically includes:

[0092] S61: Pre-baking process is performed on the photoresist 30 with a preset pattern formed on the substrate 20;

[0093] S62: Expose the entire photoresist 30 after pre-baking;

[0094] S63: Develop the substrate 20 to remove the photoresist 30 remaining outside the preset pattern.

[0095] Specifically, the substrate 20, which has been pre-patterned with photoresist 30, is sent to a pre-baking machine for pre-baking treatment via a conveying system. Then, the substrate 20 is sent to an exposure machine to expose the entire substrate 20. Specifically, ultraviolet light (VU) irradiation can be used to expose the substrate 20, so that the photosensitive factors and monomers in the photoresist 30 condense and are fixed on the glass substrate 20, making them less likely to be washed away by the developer.

[0096] In this embodiment, since the photoresist 30 has already formed a preset pattern and the photoresist 30 outside the preset pattern is recycled, there is no need to use a mask for exposure processing. Full exposure molding can be performed directly, so that the photoresist 30 with the preset pattern is cured on the glass substrate 20 under the action of UV light. This not only saves the cost of mask manufacturing and materials, but also simplifies the exposure process and improves the process capacity.

[0097] Specifically, after exposure is completed, the substrate 20 is sent to the developing machine via a conveyor system to perform developing treatment on the substrate 20 to remove the photoresist 30 remaining outside the preset pattern. Specifically, the substrate 20 can be rinsed with a 0.04% potassium hydroxide solution for 8-12 seconds to remove the photoresist 30 remaining outside the preset pattern.

[0098] It should be noted that since the photoresist 30 outside the preset pattern is not affected by the patterning magnetic field, the amount of photoresist 30 remaining outside the preset pattern after recycling and rinsing is relatively small. Therefore, the substrate 20 can be cleaned of approximately 0.2 μm thick photoresist 30 to achieve the effect of no photoresist 30 in the non-preset pattern area without affecting the amount of photoresist in the preset pattern area. Therefore, compared to the traditional development process, which requires about 30 seconds of cleaning solution to clean the unexposed photoresist 30, this embodiment only requires about 10 seconds of cleaning time and the corresponding amount of cleaning solution, which can greatly save the amount of cleaning solution and cleaning time.

[0099] Specifically, after the development process is completed, the substrate 20 needs to be rinsed with pure water for a certain period of time, approximately 40 to 60 seconds, and then the substrate 20 is dried. The substrate 20 is then transferred to a heating machine for curing.

[0100] Specifically, step S4 of the curing process includes heating the photoresist 30 that forms the preset pattern so that the photoresist 30 is cured and formed.

[0101] S4 allows the photoresist 30 to be fixed on the substrate 20 in a preset pattern to achieve its structural function, such as the function of the black matrix 31 or the function of the color resist layer 32.

[0102] Please see Figure 8 and Figure 9 , Figure 8 This is a schematic flowchart of a method for fabricating a display substrate according to one embodiment of this application. Figure 9 Through Figure 8 A schematic diagram of the structure of a display substrate obtained by the fabrication method provided in this embodiment. In this embodiment, a method for fabricating a display substrate 100 is provided, the method comprising:

[0103] S01: Provide substrate 21;

[0104] S02: Using the above-mentioned photoresist 30 patterning method, a black matrix 31, a color resist layer 32, and a spacer 33 with different preset patterns are fabricated on the substrate 21.

[0105] Specifically, in this embodiment, the method for patterning the photoresist 30 in step S02 is the method described in the above embodiments. For details, please refer to the above description of the method for patterning the photoresist 30; it will not be repeated here. The photoresist 30 is the same as that described in the above embodiments, and its specific structure and function are the same or similar to those of the photoresist 30 described above, achieving the same technical effects. For details, please refer to the above description; it will not be repeated here.

[0106] In this embodiment, the patterning method of photoresist 30 allows for more refined preset patterns, with precision reaching tens of nanometers to micrometers. Furthermore, the orientation of the magnetic field control platform can be specifically designed to meet the precision requirements of different photoresist 30 structural forms, resulting in a more three-dimensional patterned magnetic field. Therefore, using the above method, a fine-lined black matrix 31, a highly refined color resist layer 32, and a low-step, high-precision patterned spacer 33 can be formed. The spacer 33 includes a main spacer pillar 331 and a secondary spacer pillar 332. The main spacer pillar 331 is higher than the secondary spacer pillar 332, and in this embodiment, the step difference between the main spacer pillar 331 and the secondary spacer pillar 332 is low, resulting in a more refined pattern.

[0107] Specifically, such as Figure 9As shown, a black matrix 31 is formed on one side of the substrate 21, a color resist layer 32 is formed on the side of the black matrix 31 away from the substrate 21, and a spacer 33 is formed on the side of the color resist layer 32 away from the black matrix 31. The color resist layer 32 includes a first color resist layer 321, a second color resist layer 322, and a third color resist layer 323. The first color resist layer 321, the second color resist layer 322, and the third color resist layer 323 are color resist layers 32 of different colors, such as the common red, green, and blue. Of course, other colors can also be used in other embodiments, depending on actual needs. In this embodiment, due to higher pattern precision, the color resist layer 32 has a better flatness structure, and the thickness of each color resist layer 32 in the color resist layer 32 is the same. Therefore, it is not necessary to fabricate a transparent flattening layer 34 on the color resist layer 32 (see...). Figure 10 This can save a process step, reduce costs, and increase production capacity.

[0108] Please see Figure 10 , Figure 10 This is a schematic diagram of the structure of another display substrate 100 prepared by a preparation method provided in another embodiment. In this embodiment, the method of patterning with photoresist 30 described above is also used to prepare a transparent planarization layer 34 on the substrate 21. The display substrate 100 prepared by this embodiment also includes the transparent planarization layer 34, which is located between the color resist layer 32 and the spacer 33. The transparent planarization layer 34 is used to form a flat plane on the color resist layer 32 to facilitate the preparation of the spacer 33 and the stability of the spacer 33 structure.

[0109] The display substrate prepared by the above-described embodiments can not only improve the precision of each film layer structure on the display substrate, but also simplify the process, reduce material consumption, and lower costs.

[0110] In other embodiments, the above-described photoresist patterning method can also be used to prepare driving substrates or other substrates that require patterning processes, and is not limited to the above-described display substrates. As long as a film layer that needs to be patterned on a substrate, the photoresist patterning method involved in the above embodiments can be used to pattern the film layer.

[0111] The above are merely embodiments of this application and do not limit the scope of patent protection of this application. Any equivalent structural or procedural changes made using the content of this application’s specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A photoresist, characterized in that, include: Targeted magnetic nanoparticles and organic photoresist; wherein the targeted magnetic nanoparticles are magnetic, and the targeted magnetic nanoparticles target and adsorb and encapsulate the organic photoresist, so that under the action of an external magnetic field, the photoresist forms a preset pattern as the targeted magnetic nanoparticles move. The targeted magnetic nanoparticles include magnetic nanoparticles and surface modifiers and dispersants that coat the magnetic nanoparticles, so that the targeted magnetic nanoparticles have targeted adsorption properties, enabling the targeted magnetic nanoparticles to target and adsorb and encapsulate the organic photoresist. Under the action of an external patterned magnetic field, the targeted magnetic nanoparticles move in response to the patterned magnetic field and move synchronously with the organic photoresist that is adsorbed and wrapped, so that the photoresist forms a pre-defined planar pattern on the substrate that matches the patterned magnetic field. The photoresist is used to form a patterned structure when preparing a display substrate.

2. The photoresist according to claim 1, characterized in that, The magnetic nanoparticles are iron oxide nanoparticles, iron-nickel nanoparticles, or a mixture of iron oxide nanoparticles and iron-nickel nanoparticles; the mass ratio of the targeted magnetic nanoparticles to the organic photoresist is 1:100 to 1:1000; the particle size range of the targeted magnetic nanoparticles is 10 to 75 nm.

3. A method for patterning photoresist, characterized in that, include: Provide substrate; A photoresist is coated on the substrate; wherein the photoresist is the photoresist as described in claim 1 or 2; A patterned magnetic field is provided, which causes the photoresist to form a preset pattern under the action of the patterned magnetic field; The photoresist forming the preset pattern is cured.

4. The method for photoresist patterning according to claim 3, characterized in that, The step of coating the photoresist on the substrate includes: The substrate is placed on an electromagnetic control platform; wherein, the electromagnetic control platform includes an electromagnetic control module, an electromagnetic unit module, a substrate platform, and a conveying system; the electromagnetic unit module includes multiple electromagnetic basic units; the electromagnetic control module is used to control the multiple electromagnetic basic units to form different patterned magnetic fields; the substrate platform is used to support the substrate; the conveying system is used to convey the substrate to the substrate platform; The photoresist is coated onto the substrate; The electromagnetic control module is activated to control multiple electromagnetic basic units to form a uniform magnetic field, thereby forming a flat photoresist layer on the substrate.

5. The method for photoresist patterning according to claim 4, characterized in that, The step of providing a patterned magnetic field, causing the photoresist to form a preset pattern under the action of the patterned magnetic field, includes: The electromagnetic control module controls multiple electromagnetic basic units to form the patterned magnetic field, so that the photoresist layer forms the preset pattern under the action of the patterned magnetic field; The electromagnetic basic units are respectively disposed on the side of the substrate platform away from the substrate; or, the electromagnetic basic units are respectively disposed on the side of the substrate platform away from the substrate and the side of the substrate away from the substrate platform, so that the electromagnetic unit module forms a three-dimensional magnetic field.

6. The method for photoresist patterning according to claim 4, characterized in that, The electromagnetic control platform also includes a recycling system, which includes a recycling tank located below one side of the substrate platform. After the step of providing a patterning magnetic field, causing the photoresist to form a preset pattern under the action of the patterning magnetic field, the method further includes: The substrate platform is tilted toward the recycling tank at a preset angle so that the substrate is tilted at the preset angle, allowing the photoresist outside the preset pattern to flow into the recycling tank.

7. The method for photoresist patterning according to claim 6, characterized in that, The procedure further includes, prior to the step of curing the photoresist that forms the preset pattern: The photoresist on which the preset pattern is formed is pre-baked; The photoresist after pre-baking is then exposed to light. The substrate is subjected to a development process to remove the photoresist remaining outside the preset pattern; The step of curing the photoresist that forms the preset pattern includes: The photoresist that forms the preset pattern is heated to solidify and shape the photoresist.

8. A method for preparing a display substrate, characterized in that, include: Provide substrates; A black matrix, a color resist layer, and a spacer with different preset patterns are fabricated on the substrate by the photoresist patterning method as described in any one of claims 3-7. The black matrix is ​​formed on one side of the substrate, the color resist layer is formed on the side of the black matrix away from the substrate, and the spacer is formed on the side of the color resist layer away from the black matrix.

9. The preparation method according to claim 8, characterized in that, The preparation method further includes: A transparent planarization layer is fabricated on the substrate using an electromagnetic control platform. The transparent planarization layer is formed between the color resist layer and the spacer, and covers the color resist layer.

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