Display device and method for manufacturing a display device

Abstract

The application discloses a display device and a manufacturing method thereof. The display device comprises a substrate, an insulating layer and a metal layer. The substrate comprises a light-transmitting area. The insulating layer is arranged on the substrate and between the substrate and the metal layer. An edge of the insulating layer has a concave corner which is concave towards the metal layer and located in the light-transmitting area.

Description

Technical Field

[0001] This invention relates to an electronic device, and more particularly to a display device and a method for manufacturing the display device. Background Technology

[0002] During the fabrication of electronic devices, the etching depth of certain film layers (such as insulating or dielectric layers) may be inconsistent, requiring longer etching times or etching methods or solutions with strong physical or chemical properties. This can unexpectedly affect other film layers (such as conductors in metal layers), potentially leading to reduced linewidth (CD) uniformity or even line breakage.

[0003] Figure 1 This is a schematic diagram of an existing display device. For example, in Figure 1 The display device 10 includes a substrate 100, an insulating layer 20, a metal layer 30, conductive lines 31 formed by the metal layer 30, an active element region T, and a light-transmitting region TA within the substrate 100. During the fabrication of the light-transmitting region TA, the insulating layer 20 needs to be etched to a considerable thickness, and in special cases, the insulating layer 20 may even need to be completely etched to expose the underlying substrate 100. This results in areas of the metal layer 30 that are not easily covered by photoresist being more susceptible to unexpected etching or exacerbated by lateral etching during the fabrication of the conductive lines 31. This leads to significant differences in the linewidth uniformity of the conductive lines 31, and even line breaks (e.g., ...). Figure 1 The broken wires (DC) in the display device cause extremely low production yield. Summary of the Invention

[0004] The present invention provides a display device in which the line width of the conductor has good uniformity, low chance of breakage, and high production yield.

[0005] In a display device according to an embodiment of the present invention, a substrate, an insulating layer, and a metal layer are included. The substrate includes a light-transmitting area, and the insulating layer is disposed on the substrate and between the substrate and the metal layer, wherein the edge of the insulating layer has a concave corner, the concave corner being recessed toward the metal layer and located within the light-transmitting area.

[0006] A method for manufacturing a display device according to one embodiment of the present invention includes: setting a substrate, an insulating layer, and a metal layer, wherein the insulating layer is located between the substrate and the metal layer; setting a first photoresist layer on the insulating layer for a first photolithography process; performing a first etching process on the metal layer and the insulating layer to form a first patterned metal layer and a light-transmitting area, and removing the first photoresist layer; setting a second photoresist layer on the first patterned metal layer for a second photolithography process; and performing a second etching process on the first patterned metal layer and the insulating layer to form a second patterned metal layer and a concave corner located at the edge of the insulating layer, the concave corner being recessed toward the second patterned metal layer and located within the light-transmitting area.

[0007] Based on the above, in the embodiments of the present invention, since the insulating layer of the display device undergoes two etching processes, a concave corner facing the metal layer is repeatedly etched at the edge of the insulating layer. Furthermore, the conductor fabrication process involves two patterning processes on the metal layer, eliminating the need for a single patterning process to complete the conductor fabrication. This results in excellent linewidth uniformity for the conductors and significantly reduces the risk of conductor breakage, effectively improving the product yield of the display device.

[0008] To make the above features and advantages of the present invention more apparent and understandable, specific embodiments are described below in conjunction with the accompanying drawings. Attached Figure Description

[0009] Figure 1 This is a schematic diagram of an existing display device;

[0010] Figure 2A This is a top view schematic diagram of a display device according to an embodiment of the present invention;

[0011] Figure 2B yes Figure 2A A cross-sectional view along section line AA';

[0012] Figures 3A to 3H This is a schematic diagram of the manufacturing process of a display device according to an embodiment of the present invention;

[0013] Figures 3A to 3B ,as well as Figures 3C' to 3H' This is a schematic diagram of the manufacturing process of a display device according to another embodiment of the present invention;

[0014] Figure 4 This is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention;

[0015] Figure 5A and Figure 5B These are schematic diagrams comparing the linewidths of existing display devices and the linewidths of the display device of the present invention.

[0016] Symbol Explanation

[0017] 1, 1A, 10: Display device

[0018] 100:Substrate

[0019] 110, 110A, 20: Insulation layer

[0020] 120, 30: Metal layer

[0021] 31: Conductor

[0022] A1, A2: Area

[0023] CC: Concave corner

[0024] DC: Disconnection

[0025] DL: Data cable

[0026] R1, R2: Areas

[0027] ETCH1: First Etching Process

[0028] ETCH2: Second Etching Process

[0029] ETL1, ETL2, L1, L2, PHL1, PHL2: Data

[0030] LG1: First Photolithography Process

[0031] LG2: Second photolithography process

[0032] PL1: First patterned metal layer

[0033] PL2: Second patterned metal layer

[0034] PM1: First photomask pattern

[0035] PM2: Second photomask pattern

[0036] PR1: First photoresist layer

[0037] PR1': First Pattern

[0038] PR2: Second photoresist layer

[0039] PR2': Second Pattern

[0040] SL: Scan line

[0041] T: Active (Active Component) Area

[0042] TA: Translucent Area

[0043] TA1: First light-transmitting zone

[0044] TA2: Second light-transmitting zone

[0045] AA': Section line

[0046] X, Y, Z: Direction Detailed Implementation

[0047] As used herein, “about,” “approximately,” “essentially,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or, for example, within ±30%, ±20%, ±15%, ±10%, ±5%. Furthermore, the use of “about,” “approximately,” “essentially,” or “substantially” herein may be chosen to select a more acceptable range of deviations or standard deviations depending on the nature of the measurement, the cutting nature, or other properties, and a single standard deviation may not be applicable to all properties.

[0048] In the accompanying drawings, the thicknesses of layers, films, panels, regions, etc., are enlarged for clarity. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to the other element, or intermediate elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, no intermediate elements are present. As used herein, "connection" can refer to a physical and / or electrical connection. Furthermore, an "electrical connection" may involve the presence of other elements between two elements.

[0049] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element references are used in the drawings and description to denote the same or similar parts.

[0050] Figure 2A This is a top view schematic diagram of a display device according to an embodiment of the present invention. Figure 2B yes Figure 2A A sectional view along section line AA'. Please also refer to... Figure 2A and Figure 2BThe display device 1 includes, in the thickness direction (e.g., direction Z), a substrate 100, an insulating layer 110, and a metal layer 120 sequentially disposed. That is, the insulating layer 110 is disposed on the substrate 100 and between the substrate 100 and the metal layer 120. In some embodiments, the insulating layer 110 may directly contact the substrate 100; however, the invention is not limited thereto. In other embodiments, the space between the insulating layer 110 and the substrate 100 may include an insulating layer composed of other circuit layers, dielectric layers, buffer layers, or multiple film layers. The substrate 100 may be, for example, a light-transmitting substrate. In one embodiment, the substrate 100 may be an inorganic transparent material (e.g., glass, quartz, other suitable materials, or combinations thereof) or an organic transparent material (e.g., polyolefins, polyamides, polyols, polyesters, thermoplastic polymers or thermosetting polymers, polycarbonates, other suitable materials, or combinations thereof), but is not limited thereto.

[0051] On the other hand, the substrate 100 may include multiple light-transmitting areas TA in the planar direction (e.g., direction X and direction Y). When the display device 1 is a transparent display, the light-transmitting areas TA may also include pixel electrodes (not shown) made of transparent conductive material to serve as display pixels of the display device 1. The transparent conductive material may be, for example, indium tin oxide, indium zinc oxide, indium oxide, tin oxide, other suitable materials, or combinations thereof, but is not limited thereto.

[0052] The insulating layer 110 is made of an inorganic insulating transparent material, such as silicon oxide, silicon nitride, silicon nitride, silicon carbide, or other materials, or combinations thereof. In other embodiments, the insulating layer 110 may include, for example, a single-layer structure or a multi-layer structure, but is not limited thereto.

[0053] The metal layer 120 may be a film layer including multiple conductive lines in the display device 1. For example, multiple data lines DL and multiple scan lines SL, to electrically connect the various pixels in the display device 1 using multiple conductive lines. On the other hand, the display device 1 also includes an active element region T and multiple active elements (not shown) disposed in the active element region T to control the various pixels. The multiple active elements may respectively include a source, a gate, a drain, a semiconductor channel layer, etc. However, the present invention is not limited thereto, and the active element region T may also include one or more storage capacitor structures. The multiple data lines DL and multiple scan lines SL of the metal layer 120 can electrically connect the active elements and the other elements mentioned above. In other embodiments, the metal layer 120 may also be used to fabricate partial conductor structures (e.g., source, drain, electrodes of storage capacitors, etc.) in each element in the active element region T, and the present invention is not limited thereto. In other embodiments, the width of the conductive lines (e.g., multiple data lines DL and multiple scan lines SL) formed by the metal layer 120 may be approximately greater than or equal to 3 micrometers and less than or equal to 4 micrometers.

[0054] It is worth mentioning that the insulating layer 110 has a concave corner CC at its edge facing the light-transmitting area TA, and the concave corner CC is recessed towards the metal layer 120 and located within the light-transmitting area TA. Specifically, in the X and Y directions, the light-transmitting area TA may include a first light-transmitting area TA1 located at the edge of the light-transmitting area TA, and a second light-transmitting area TA2 located at the center of the light-transmitting area TA. In other words, in the planar direction of the display device 1, the first light-transmitting area TA1 is located between the metal layer 120 and the second light-transmitting area TA2, and the second light-transmitting area TA2 can be surrounded by the first light-transmitting area TA1. Figure 2B For example, the first light-transmitting area TA1 can be defined as the region from the boundary of the metal layer 120 to the boundary of the insulating layer 110, and the position of the concave corner CC can fall within the first light-transmitting area TA1, however, the present invention is not limited thereto.

[0055] It is worth mentioning that the second light-transmitting area TA2 can expose the surface of the substrate 100. In other words, in the direction perpendicular to the surface of the display device 1, the second light-transmitting area TA2 may not include the insulating layer 110. This allows the display device 1 to function as a transmissive display device, as the second light-transmitting area TA2 with fewer film layers can reduce unexpected refraction and facilitate the passage of light beams, thereby improving light transmission and display quality. However, the present invention is not limited thereto. In other embodiments, the second light-transmitting area TA2 may also include a portion of the insulating layer 110 without completely removing it.

[0056] Figures 3A to 3H This is a schematic diagram illustrating the manufacturing process of a display device according to an embodiment of the present invention. The following description, along with the accompanying illustrations, explains the manufacturing method of display device 1. Please refer to... Figure 3A First, a substrate 100 is formed, and an insulating layer 110 and a metal layer 120 are sequentially formed in the thickness direction of the substrate 100. In this embodiment, the method for forming the insulating layer 110 and the metal layer 120, or other film layers (not shown) disposed therebetween, may be metal-organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), but is not limited thereto.

[0057] Please refer to Figure 3B and Figure 3CNext, a first photoresist layer PR1 is applied to the insulating layer 110 for the first photolithography fabrication process LG1. The first photoresist layer PR1 can be, for example, a positive photoresist, but the invention is not limited thereto. Before applying the first photoresist layer PR1, the insulating layer 110 may be pre-baked, and a primer layer (e.g., hexamethyldisilazane, not shown) vapor may be applied to the insulating layer 110 to facilitate the coverage and adhesion of the first photoresist layer PR1. Methods for applying the first photoresist layer PR1 include, for example, spin coating; however, the invention is not limited thereto. On the other hand, the first photolithography process LG1 includes: performing a soft bake on a solution of the material having a first photoresist layer PR1 to remove some of the solvent in the first photoresist layer PR1; transferring an image from a first photomask pattern PM1 onto the first photoresist layer PR1 using an exposure process; developing the transferred image from the first photomask pattern PM1 using a development process to pattern the first photoresist layer PR1 to form a first pattern PR1'. The area of ​​the light-blocking pattern on the first photomask pattern PM1 can approximately correspond to the area of ​​the first pattern PR1'; and a hard bake to remove most of the solvent in the first pattern PR1' to increase the adhesion and etching resistance of the first pattern PR1'. However, the invention is not limited to this. It is worth mentioning that the pattern and position of the light-transmitting area TA can be initially defined by the first photomask pattern PM1 in the first photolithography process LG1.

[0058] Please refer to Figure 3C as well as Figure 3D Next, a first etching process ETCH1 is performed on the first metal layer 120, the first pattern PR1', and the insulating layer 110. Using a mask formed by the first pattern PR1', areas of the first metal layer 120 and the insulating layer 110 not covered by the first pattern PR1' are etched to further etch the first metal layer 120 into a first patterned metal layer PL1. The first etching process ETCH1 can be, for example, a wet etching method or a dry etching method; the present invention is not limited thereto. Furthermore, a first region R1 exposing the insulating layer 110 and a second region R2 exposing the substrate 100 can be further formed; that is, the insulating layer 110 can be completely removed in the second region R2. Accordingly, the first region R1 and the second region R2 can be defined as... Figure 2A as well as Figure 2B The light-transmitting area TA is described in the text. The second region R2 that exposes the substrate 100 can be regarded as the aforementioned second light-transmitting area TA2.

[0059] Please refer to Figure 3E as well as Figure 3FNext, the first pattern PR1' formed by the first photoresist layer PR1 is removed to expose the first patterned metal layer PL1. The method for removing the first photoresist layer PR1 can be, for example, by using a photoresist thinner to dissolve and remove the first pattern PR1'; the invention is not limited to this. After removing the first photoresist layer PR1, a second photoresist layer PR2 is then deposited on the first patterned metal layer PL1 for a second photolithography process LG2. For ease of presentation, only the second photoresist layer PR2 deposited on the first patterned metal layer PL1 is shown in the figure, while the depiction of the second photoresist layer PR2 on the first region R1 and the second region R2 during the coating process is omitted. The method for setting the second photoresist layer PR2 and the method for the second photolithography process LG2 are similar to those described above for setting the first photoresist layer PR1 and the first photolithography process LG1. The materials of the first photoresist layer PR1 and the second photoresist layer PR2 can be the same, and will not be elaborated further here. Through the second photolithography process LG2, the pattern of the second photomask PM2 can be transferred onto the second photoresist layer PR2, and then developed to form the pattern described later. Figure 3G The second pattern PR2' in the design.

[0060] As mentioned above, the light-blocking area of ​​the second photomask pattern PM2 can roughly correspond to the area of ​​the second pattern PR2'. It is worth noting that the second photomask pattern PM2 used in the second photolithography process LG2 can be different from the first photomask pattern PM1 used in the first photolithography process LG1. In some embodiments, the second photomask pattern PM2 can correspond to the shape and position of the conductors (e.g., the aforementioned data lines DL or scan lines SL) of the display device 1. In other words, the pattern and size of the second pattern PR2' can be different from the pattern and size of the first pattern PR1'.

[0061] Please refer to Figure 3G as well as Figure 3H Next, a second etching process ETCH2 is performed on the first patterned metal layer PL1 and the insulating layer 110. Specifically, a portion of the first patterned metal layer PL1 not covered by the second pattern PR2', and a first region R1 in the insulating layer 110 not covered by the first patterned metal layer PL1, will be etched in the second etching process ETCH2. The method of the second etching process ETCH2 is similar to the method of the first etching process ETCH1 described above, and will not be repeated here.

[0062] Please continue to refer to Figure 3HAfter the second etching process ETCH2 is completed, the first patterned metal layer PL1 is patterned again to form the second patterned metal layer PL2. The second patterned metal layer PL2 can be, for example, a data line DL in the aforementioned conductive lines, but the invention is not limited thereto. The second patterned metal layer PL2 can also be a scan line SL in the aforementioned conductive lines. In some embodiments, Figure 3G The projected area A1 of the first patterned metal layer PL1 on the substrate 100 can be greater than 1 / 2. Figure 3H The projected area A2 of the second patterned metal layer PL2 on the substrate 100 is shown. It is worth noting that, because the edges of the insulating layer 110, such as the first region R1, are repeatedly etched by the first etching process ETCH1 and the second etching process ETCH2, a concave corner CC is formed facing the second patterned metal layer PL2. This differs from conventional etching techniques where the edges of the stepped structure form rounded corners protruding away from the second patterned metal layer PL2 due to manufacturing process precision. Furthermore, the concave corner CC can be located within the light-transmitting region TA, such as the aforementioned first light-transmitting region TA1. In other words, the position of the concave corner CC can overlap with the position of the first light-transmitting region TA1.

[0063] Finally, the second pattern PR2' formed by the second photoresist layer PR2 can be dissolved and removed using a photoresist thinner. This completes the process. Figure 2B The architecture of the display device 1 is described below. Compared to a single photolithography process that forms both the conductive wire structure and the light-transmitting area, the first photolithography process LG1, which forms the light-transmitting area TA (including the first light-transmitting area TA1 and the second light-transmitting area TA2), differs from the second photolithography process LG2, which forms the conductive wires, during the manufacturing of the display device 1. The metal layer 120 undergoes two photolithography processes and two etching processes, thereby ensuring the uniformity and integrity of the pattern formed by the metal layer 120, significantly reducing the probability of conductive wire breakage, and greatly improving the linewidth uniformity of the conductive wires, thus increasing the product yield of the display device 1.

[0064] The following are some other embodiments to illustrate the present invention in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and they will not be repeated below.

[0065] Figures 3A to 3B ,as well as Figures 3C' to 3H' This is a schematic diagram of the manufacturing process of a display device according to another embodiment of the present invention. In other embodiments, the second light-transmitting area TA2 may also optionally retain a portion of the insulating layer 110. For example, referring to... Figure 3C' as well as Figure 3DDuring the first etching process ETCH1, which etches the insulating layer 110 and the metal layer 120 to form the light-transmitting region TA and the first patterned metal layer PL1, the insulating layer 110 may not be completely removed from the area not covered by the first pattern PR1' of the first photoresist layer PR1. Therefore, a first region R1 with a thicker insulating layer 110 and a second region R2 with a thinner insulating layer 110 can be formed in the light-transmitting region TA.

[0066] Please refer to Figure 3E' as well as Figure 3F' Next, the first pattern PR1' is removed using a photoresist thinner to expose the first patterned metal layer PL1, and a second photoresist layer PR2 is coated on the first patterned metal layer PL1 to proceed with the second photolithography process LG2. Similar to the above, the illustration of the second photoresist layer PR2 coated on the first region R1 and the second region R2 is omitted here.

[0067] Please refer to Figure 3G' and Figure 3H' The second photoresist layer PR2 is patterned into a second pattern PR2' via a second photolithography process LG2, followed by a second etching process ETCH2. Using the second pattern PR2' as a mask, areas not covered by the second pattern PR2' (e.g., the first region R1, the second region R2, and the first patterned metal layer PL1 not covered by the second pattern PR2') can be further etched to form the second patterned metal layer PL2, the first light-transmitting region TA1 which is repeatedly etched by the first etching process ETCH1 and the second etching process ETCH2, and the second light-transmitting region TA2 where a portion of the insulating layer 110 remains unetched. The second patterned metal layer PL2 can be, for example, a data line DL, but the invention is not limited to this. In other embodiments, the second patterned metal layer PL2 can also be a scan line SL. It is worth noting that since the insulating layer 110 of the first light-transmitting region TA1 also undergoes two etching processes, a concave angle CC is formed facing the second patterned metal layer PL2.

[0068] Figure 4 This is a cross-sectional schematic diagram of a display device according to another embodiment of the present invention. Please refer to... Figure 4 After completing the above steps, remove the second pattern PR2' to form the desired shape. Figure 4 The display device 1A in the middle, and with Figure 2B The difference in display device 1 is that the second light-transmitting area TA2 in display device 1A has a portion of the first insulating layer 110 that is not completely etched. Through the above manufacturing process, each conductor of display device 1A can also have a uniform linewidth and a high yield. For relevant details, please refer to the preceding paragraphs, which will not be repeated here.

[0069] Figure 5A and Figure 5B These are schematic diagrams comparing the linewidths of existing display devices and the linewidths of the display device of the present invention. Please refer to them first. Figure 5A Data L1 represents the linewidth (in micrometers) of nine data points corresponding to a conductor 31 in one area of ​​a conventional display (e.g., display device 10); and data L2 represents the linewidth of nine data points corresponding to another conductor 31 in another area of ​​the conventional display. It can be observed that, regardless of whether it is data L1 or data L2, the linewidth uniformity of the conductor 31 not only varies greatly, but also easily exhibits broken lines (such as the aforementioned broken line DC), for example, data points with a linewidth of 0 micrometers in data L2. Therefore, the yield of the manufactured display device 10 is low.

[0070] And reference Figure 5B Data PHL1 refers to the linewidth of each point formed after the second photolithography process LG2 of a region of the display device 1 (or display device 1A) of the present invention. ETL1 refers to the linewidth of each point formed after the second etching process ETCH2 of a region of the display device 1 (or display device 1A) of the present invention. Similarly, data PHL2 refers to the linewidth of each point formed after the second photolithography process LG2 of another region of the display device 1 (or display device 1A) of the present invention. Data ETL2 refers to the linewidth of each point formed after the second etching process ETCH2 of another region of the display device 1 (or display device 1A) of the present invention. Figure 5B It can be seen that, in addition to forming a highly uniform line width, the conductors formed by this embodiment have no broken lines found in any of the 16 data points, which greatly improves the accuracy and yield of each conductor pattern and effectively enhances the product competitiveness of display device 1 or display device 1A.

[0071] In summary, in the embodiments of the present invention, because the insulating layer of the display device undergoes two etching processes, a concave angle facing the metal layer is repeatedly etched at the edge of the insulating layer. Furthermore, the conductor fabrication process involves two patterning processes on the metal layer, eliminating the need for a single patterning process to complete the conductor fabrication. This results in excellent linewidth uniformity for the conductors and significantly reduces the risk of conductor breakage, effectively improving the product yield of the display device.

[0072] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A display device, comprising: Substrate, including the light-transmitting area; An insulating layer is disposed on the substrate; as well as A metal layer, wherein the insulating layer is disposed between the substrate and the metal layer. The edge of the insulating layer has a concave corner, which is recessed towards the metal layer and located within the light-transmitting area. The manufacturing method of the display device includes: A first photoresist layer is applied to the metal layer for the first photolithography process. The metal layer and the insulating layer are subjected to a first etching process to form a first patterned metal layer and the light-transmitting area, and the first photoresist layer is removed. A second photoresist layer is applied on the first patterned metal layer for a second photolithography process. A second etching process is performed on the first patterned metal layer and the insulating layer to form a second patterned metal layer and a concave corner located at the edge of the insulating layer. The concave corner is recessed towards the second patterned metal layer and is located within the light-transmitting area. The second patterned metal layer includes the conductive lines of the display device. The first photomask pattern in the first photolithography process defines the pattern and position of the light-transmitting area. The second photomask pattern of the second photolithography process corresponds to the shape and position of the conductor in the display device.

2. The display device as claimed in claim 1, wherein the light-transmitting area includes a first light-transmitting area and a second light-transmitting area, wherein in the planar direction of the display device, the first light-transmitting area is located between the metal layer and the second light-transmitting area, and wherein the substrate is a glass substrate.

3. The display device as claimed in claim 2, wherein the position of the concave corner overlaps with the first light-transmitting area.

4. The display device as claimed in claim 2, wherein the second light-transmitting area does not include the insulating layer.

5. The display device as claimed in claim 1, further comprising: Active components; The conductor is electrically connected to the active element, and the width of the conductor is greater than or equal to 3 micrometers and less than or equal to 4 micrometers.

6. A method for manufacturing a display device, comprising: A substrate, an insulating layer, and a metal layer are provided, wherein the insulating layer is between the substrate and the metal layer; A first photoresist layer is applied to the metal layer for the first photolithography process. The metal layer and the insulating layer are subjected to a first etching process to form a first patterned metal layer and a light-transmitting area, and the first photoresist layer is removed. A second photoresist layer is applied on the first patterned metal layer for a second photolithography process. A second etching process is performed on the first patterned metal layer and the insulating layer to form a second patterned metal layer and a concave corner located at the edge of the insulating layer. The concave corner is recessed towards the second patterned metal layer and located within the light-transmitting area. The second patterned metal layer includes the conductive lines of the display device. The first photomask pattern in the first photolithography process defines the pattern and position of the light-transmitting area. The second photomask pattern of the second photolithography process corresponds to the shape and position of the conductor in the display device.

7. The method of manufacturing a display device as claimed in claim 6, wherein the first photoresist layer and the second photoresist layer are made of the same material.

8. The method of manufacturing a display device as claimed in claim 6, wherein the light-transmitting area includes a first light-transmitting area and a second light-transmitting area, and in the planar direction of the display device, the first light-transmitting area is located between the metal layer and the second light-transmitting area, wherein the position of the concave corner overlaps with the first light-transmitting area.

9. The method of manufacturing a display device as claimed in claim 8, wherein the second light-transmitting area exposes the substrate.

10. The method of manufacturing a display device as claimed in claim 8, wherein the second light-transmitting area includes a portion of the insulating layer.

11. The method of manufacturing a display device as claimed in claim 6, wherein the first photomask pattern of the first photolithography process is different from the second photomask pattern of the second photolithography process.

12. The method of manufacturing a display device as claimed in claim 6, wherein the projected area of ​​the first patterned metal layer on the substrate is greater than the projected area of ​​the second patterned metal layer on the substrate.

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