Apparatus for generating a magnetic field on a substrate during semiconductor processing

Abstract

A plasma vapor deposition (PVD) chamber for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to attach from an exterior to a substrate support pedestal and positioned below the substrate support pedestal, and a magnetic field generator secured to the annular support assembly and configured to radiate a magnetic field on a top surface of the substrate. The magnetic field generator can include a plurality of symmetrically spaced-apart discrete permanent magnets, or one or more electromagnets can be used to generate the magnetic field.

Description

[0001] field

[0002] The implementation of this principle generally involves semiconductor manufacturing.

[0003] background

[0004] In semiconductor manufacturing, layers of different materials are etched or deposited onto a substrate to form a semiconductor structure. It is generally desirable to deposit layers in an even or uniform manner to allow for fine control over semiconductor processing. However, the inventors have observed that material deposition in a plasma vapor deposition (PVD) chamber is typically not highly uniform due to poor ion trapping on the substrate during deposition.

[0005] Therefore, the inventors provide an apparatus that helps to capture ions on a substrate during PVD processing, thereby producing excellent deposition performance.

[0006] Overview

[0007] This article provides an apparatus for influencing ion trapping on a substrate during PVD processing.

[0008] In some embodiments, an apparatus for influencing ion trajectories on a substrate may include: at least one annular support assembly configured to be externally attached to and positioned below a substrate support base in a vacuum space of a processing chamber; and a magnetic field generator fixed to the at least one annular support assembly, the magnetic field generator being configured to radiate a magnetic field on the top surface of the substrate and to influence the angle of incidence of ions impacting the substrate during plasma vapor deposition.

[0009] In some embodiments, the device may further include: at least one annular support assembly comprising a top annular plate, a middle annular plate, and a bottom annular plate, the middle annular plate having a plurality of openings, and wherein a magnetic field generator comprises a plurality of discrete permanent magnets, the plurality of discrete permanent magnets being positioned within the plurality of openings of the middle annular plate and held in place by the top and bottom annular plates; wherein the plurality of discrete permanent magnets are configured to operate at a temperature of at least 200 degrees Celsius or higher without loss of magnetic field strength; wherein at least one of the plurality of discrete permanent magnets is formed of samarium cobalt material; wherein the samarium cobalt material has a maximum energy product of at least 30 MGOe; wherein the plurality of discrete permanent magnets includes 18 discrete permanent magnets symmetrically spaced apart in at least one annular support assembly; wherein each of the plurality of discrete permanent magnets has a width of approximately 0.7 inches, a depth of approximately 0.7 inches, and a length of approximately 1.5 inches; wherein the annular... The support assembly is formed of aluminum; wherein the magnetic field generator includes at least one electromagnet fixed to at least one annular support assembly; wherein the at least one electromagnet is configured to have a current of up to approximately 7 amperes; wherein the at least one electromagnet is configured to provide a variable magnetic field; wherein the at least one electromagnet is configured to provide a magnetic field capable of being turned on and off; wherein the magnetic field generator includes separate inner windings and separate outer windings, wherein each magnetic field of the separate inner windings and separate outer windings can be changed individually; wherein the magnetic field generator is configured to alternate the polarity of each magnetic field of the separate inner windings and separate outer windings; and / or wherein at least one annular support assembly includes a first annular support assembly and a second annular support assembly, wherein the second annular support assembly is located radially outside the first annular support assembly, and wherein the first magnetic field generator of the first annular support assembly and the second magnetic field generator of the second annular support assembly are configured to be independently controlled.

[0010] In some embodiments, an apparatus for influencing ion trajectory on a substrate may include: at least one annular support assembly formed of an aluminum-based material and configured to be externally attached to and positioned below a substrate support base, wherein the at least one annular support assembly includes a top annular plate, an intermediate annular plate having a plurality of openings, and a bottom annular plate; and a magnetic field generator fixed to the at least one annular support assembly and configured to radiate a magnetic field on a top surface of the substrate, wherein the magnetic field generator includes a plurality of discrete permanent magnets positioned within a plurality of openings in the intermediate annular plate and held in position by the top and bottom annular plates, and wherein the plurality of discrete permanent magnets are configured to operate at a temperature of at least 200 degrees Celsius without loss of magnetic field strength.

[0011] In some embodiments, the device may further include: at least one of the plurality of discrete permanent magnets being formed of samarium cobalt material having a maximum energy product of at least 30 MGOe, and / or at least one of the plurality of discrete permanent magnets being individually configured to prevent gas release.

[0012] In some embodiments, an apparatus for influencing ion trajectory on a substrate may include: at least one annular support assembly formed of an aluminum-based material, the at least one annular support assembly being externally attached to and positioned below a substrate support base; and a magnetic field generator fixed to the at least one annular support assembly and configured to radiate a magnetic field on the top surface of the substrate, wherein the magnetic field generator includes at least one electromagnet fixed to the at least one annular support assembly, and wherein the at least one electromagnet is configured to provide a variable magnetic field.

[0013] In some embodiments, the device may further include: a magnetic field generator comprising a separate inner winding and a separate outer winding, the separate inner winding and the separate outer winding being horizontally adjacent to each other, and wherein each magnetic field of the separate inner winding and the separate outer winding can be individually changed, and / or wherein at least one annular support assembly comprises a first annular support assembly and a second annular support assembly, wherein the second annular support assembly is located radially outward.

[0014] In some embodiments, an apparatus for influencing ion trajectories on a substrate includes: at least one annular support assembly configured to be externally attached to and positioned below a substrate support base in a vacuum space of a processing chamber; and a magnetic field generator fixed to the at least one annular support assembly, configured to radiate a magnetic field on a top surface of the substrate, and configured to influence the angle of incidence of ions impacting the substrate during plasma vapor deposition. The at least one annular support assembly includes a top annular plate, an intermediate annular plate, and a bottom annular plate, the intermediate annular plate having a plurality of openings. The magnetic field generator includes a plurality of discrete permanent magnets positioned within the plurality of openings in the intermediate annular plate and held in place by the top and bottom annular plates. At least one of the discrete permanent magnets extends longitudinally between the top and bottom plates along a longitudinal axis extending between the top and bottom plates.

[0015] In some embodiments, an apparatus for influencing ion trajectories on a substrate includes: at least one arcuate support assembly configured to be externally attached to and positioned below a substrate support base in a vacuum space of a processing chamber; and a magnetic field generator fixed to the at least one arcuate support assembly, configured to radiate a magnetic field on a top surface of the substrate, and configured to influence the angle of incidence of ions impacting the substrate during plasma vapor deposition. The at least one arcuate support assembly includes a top arcuate plate, a middle arcuate plate, and a bottom arcuate plate, the middle arcuate plate having a plurality of openings. The magnetic field generator includes a plurality of discrete permanent magnets positioned within the plurality of openings in the middle arcuate plate and held in place by the top and bottom arcuate plates.

[0016] In some embodiments, an apparatus for influencing ion trajectories on a substrate includes: at least one support assembly configured to be externally attached to and positioned below a substrate support base in a vacuum space of a processing chamber; and a magnetic field generator fixed to the at least one support assembly, configured to radiate a magnetic field on a top surface of the substrate, and configured to influence the angle of incidence of ions impacting the substrate during plasma vapor deposition. The support assembly includes a top plate, an intermediate plate, and a bottom plate, the intermediate plate having a plurality of openings. The magnetic field generator includes a plurality of discrete permanent magnets positioned within the plurality of openings in the intermediate plate and held in place by the top and bottom plates. At least one of the discrete permanent magnets extends longitudinally between the top and bottom plates along a longitudinal axis extending between the top and bottom plates.

[0017] Other and further implementation methods are disclosed below.

[0018] Brief description of the attached figures

[0019] The implementation of the principle, which is briefly summarized above and discussed in more detail below, can be understood by referring to the illustrative embodiments of the principle illustrated in the accompanying drawings. However, the drawings are merely schematic illustrations of typical implementations of the principle and should therefore not be considered as limiting the scope of the principle, as other equivalent implementations are permissible.

[0020] Figure 1 This is a cross-sectional view of a processing chamber according to some embodiments of this principle.

[0021] Figure 2 A cross-sectional view of a substrate support base with an annular support assembly, which has a permanent magnet forming a magnetic field generator, is depicted according to some embodiments of this principle.

[0022] Figure 3 A cross-sectional view of a substrate support base with an annular support assembly, which has a permanent magnet forming a magnetic field generator, is depicted according to some embodiments of this principle.

[0023] Figure 4 An isometric view of a ring support assembly according to some embodiments of this principle is depicted, the ring support assembly having a permanent magnet forming a magnetic field generator.

[0024] Figure 5 An isometric view depicting a portion of a ring-shaped support assembly with permanent magnets according to some embodiments of this principle is shown.

[0025] Figure 6 A cross-sectional view of a ring-shaped support assembly with permanent magnets according to some embodiments of this principle is depicted.

[0026] Figure 7 Isometric views of permanent magnets according to some embodiments of this principle are depicted.

[0027] Figure 8 A cross-sectional view of a substrate support base with an annular support assembly according to some embodiments of this principle is depicted, the annular support assembly having an electromagnet forming a magnetic field generator.

[0028] Figure 9 A cross-sectional view of a substrate support base with an annular support assembly according to some embodiments of this principle is depicted, the annular support assembly having an electromagnet forming a magnetic field generator.

[0029] Figure 10 A cross-sectional view of a substrate support base with an annular support assembly according to some embodiments of this principle is depicted. The annular support assembly has a plurality of electromagnets forming a magnetic field generator.

[0030] Figure 11 A cross-sectional view of a substrate support base with an annular support assembly according to some embodiments of this principle is depicted. The annular support assembly has a plurality of electromagnets forming a magnetic field generator.

[0031] Figure 12 A top view depicts several electromagnets forming a magnetic field generator according to some embodiments of this principle.

[0032] Figure 13 An isometric view depicting a portion of a plurality of electromagnets forming a magnetic field generator with cooling pipes according to some embodiments of this principle is shown.

[0033] Figure 14 Cross-sectional and top views of a substrate according to some embodiments of this principle are depicted.

[0034] Figure 15 A graph depicts the effect of a magnetic field on ion trajectories in some specific embodiments based on this principle.

[0035] Figure 16A A plan view of a ring support assembly according to some embodiments of this principle is depicted, the ring support assembly having a permanent magnet forming a magnetic field generator.

[0036] Figure 16B Some implementation methods based on this principle are described. Figure 16A The side view of the ring support assembly shown.

[0037] Figure 16C Some implementation methods based on this principle are described. Figure 16B A cross-sectional view of the annular support assembly along section line 16C-16C.

[0038] Figure 17 A plan view of an arc-shaped support assembly according to some embodiments of this principle is depicted, the arc-shaped support assembly having a permanent magnet forming a magnetic field generator.

[0039] Figure 18 The effect of radial distance on magnetic field strength is depicted in some embodiments based on this principle.

[0040] To aid understanding, the same reference numerals have been used as much as possible to identify common elements in the figures. The figures are not drawn to scale and have been simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further description.

[0041] Detailed description

[0042] Ion trapping on the wafer plane varies with the strength and direction of the magnetic field. This principle-based device provides hardware consisting of a magnetic field generator positioned beneath a substrate support base, capable of achieving a stronger normal magnetic field line at the wafer plane. In some semiconductor chamber designs, the strength and direction of the magnetic field are controlled by a magnet located above the wafer plane outside the processing chamber. Because the magnet is positioned above the wafer plane, it is limited in ensuring a proper magnetic field orientation, especially at the wafer edges, which can lead to ion loss in these edge regions. This principle-based device addresses the problem of the lack of normal magnetic field orientation at the wafer level and provides an efficient way to achieve a uniform and stronger normal magnetic field line across the entire wafer plane, which helps reduce ion loss. Manipulation of the magnetic field orientation can also provide improved bottom and sidewall coverage for features on the substrate during resputtering.

[0043] In some embodiments, the device of this principle uses multiple discrete permanent magnets added beneath a substrate support base in the vacuum space of a processing chamber located near the wafer edge region to achieve a strong normal magnetic field on the wafer surface. In some specific embodiments, the device of this principle uses one or more electromagnets added beneath a substrate support base in the vacuum space of a processing chamber located even closer to the wafer edge region to achieve a strong normal magnetic field on the wafer surface. In some embodiments, the device can provide a cost-effective enhancement to existing chamber setups, resulting in better plasma vapor deposition (PVD) film characteristics due to increased ion flux. The device of this principle also has the advantage of providing a tuning knob to improve PVD film characteristics by customizing the parameters of the device and the magnetic field generator through improved ion trapping (by adjusting step coverage and adjusting deposition rate). In some embodiments using discrete permanent magnets, the device offers further economic benefits because the device does not require any electrical or power integration and can be operated without any changes to the chamber software. The device can also provide greater adjustability for additional electromagnets outside the processing chamber used in conjunction with the device to further improve thin film deposition quality.

[0044] exist Figure 1 In view 100, a processing chamber 102 of a device that can incorporate this principle is depicted. The processing chamber 102 has a substrate support base 104 that provides a surface to support a substrate 106 during processing. The processing chamber 102 includes a processing space 108 and a non-processing space 110, in which the substrate 106 is processed, while the non-processing space 110 is in fluid contact with a vacuum pump 112 and the processing space 108. The vacuum pump 112 allows the processing space 108 to be evacuated to operate in a vacuum during processing. The substrate support base 104 may include electrodes 116 connected to an RF power supply 114 for biasing the substrate 106 during processing. The processing chamber 102 may also include an upper electrode 118 electrically connected to a plasma DC power supply 120. The processing chamber 102 may also include a controller 138. The controller 138 controls the operation of the processing chamber 102 using direct control or alternatively by controlling a computer (or controller) associated with the processing chamber 102.

[0045] In operation, controller 138 controls the magnetic field, data collection, and feedback from relevant devices and systems to optimize the performance of processing chamber 102. Controller 138 generally includes a central processing unit (CPU) 140, memory 142, and support circuitry 144. CPU 140 can be any form of general-purpose computer processor that can be used in an industrial environment. Support circuitry 144 is conventionally coupled to CPU 140 and may include cache, clock circuitry, input / output subsystems, power supply, etc. Software routines (e.g., ion trajectory tuning methods using devices based on this principle) can be stored in memory 142 and, when executed by CPU 140, transform CPU 140 into a dedicated computer (controller 138). Software routines can also be stored and / or executed by a second controller (not shown), located remotely from processing chamber 102.

[0046] The memory 142 is in the form of a computer-readable storage medium containing instructions that, when executed by the CPU 140, assist in semiconductor processing and device operation. The instructions in the memory 142 are in the form of a program product, such as a program implementing a deposition method, including device performance parameters to appropriately adjust the deposition. The program code may conform to any of several different programming languages. In one example, this disclosure may be implemented as a program product stored on a computer-readable storage medium and used with a computer system. The program product defines aspects of a specific implementation (including the methods described herein). Illustrative computer-readable storage media include (but are not limited to): non-writable storage media (e.g., read-only memory devices within a computer, such as optical discs read by an optical drive, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory) on which information is permanently stored; and writable storage media (e.g., disk platters or hard disk drives within a disk drive or any type of solid-state random access semiconductor memory) on which changeable information is stored. This computer-readable storage medium is an aspect of this principle when it loads computer-readable instructions indicating functions (such as ion trajectory tuning methods).

[0047] The magnetron assembly 122 can also be used to control the plasma 124 generated in the processing chamber 102 to increase plasma ionization. In some processing chambers, an optional collimator 126 can be used to filter ions and is electrically connected to the collimator DC power supply 128. Other processing chambers do not use a collimator. A first external electromagnet assembly 130 can be used in conjunction with the optional collimator 126 to further influence the ion trajectory. A second external electromagnet assembly 132 can also be used closer to the substrate support base 104 to further influence the ion trajectory. In some cases, an external permanent magnet assembly 134 can be disposed between the first external magnet assembly and the second external electromagnet assembly 132. Despite the use of multiple components to influence the ion trajectory, the inventors have observed that the deposition thickness away from the center of the substrate is generally thinner than that in the central portion of the substrate because there are fewer ion trajectories perpendicular (orthogonal) to the top surface of the substrate. The inventors have found that if one or more magnetic field generators 136 are located below the substrate support base 104, for example in a vacuum space, film uniformity increases, particularly at the edge regions 1402 of the substrate 106, such as... Figure 14 As shown in view 1400.

[0048] In some embodiments, one or more magnetic field generators 136 are provided in a north pole-up configuration (other configurations may use south pole-up). Magnetic field 1404 (B field) impacts the substrate 106 less frequently in the edge region 1402 and the central region 1408. In some embodiments using multiple discrete permanent magnets, the magnetic field strength of one or more magnetic field generators 136 can be adjusted by using different magnetic materials with different magnetic properties to increase or decrease the magnetic field, by decreasing or increasing the volume of magnetic material to decrease or increase the magnetic field strength, and / or by decreasing or increasing the number of permanent magnets to decrease or increase the number and location of the magnetic field, respectively. Since film uniformity is highly desirable, symmetrically placing the permanent magnets around the bottom surface of the substrate support base 104 helps improve deposition uniformity.

[0049] In some embodiments, the permanent magnets may be formed of a magnetic material having a maximum energy product of at least 30 MGOe (megauss-Oersted) (and preferably at least 32 MGOe). Multiple discrete permanent magnets forming one or more magnetic field generators 136 may be symmetrically spaced around the substrate 106 in a ring assembly to hold the permanent magnets in place. In some embodiments, 18 rectangular permanent magnets may be used beneath the substrate support base 104. Because the volume of the magnetic material affects the strength of the permanent magnets, in some embodiments, the permanent magnets may have a rectangular shape of approximately 0.5 inches to approximately 0.75 inches (see [link to relevant documentation]). Figure 7The permanent magnet has a rectangular shape and a height of approximately 1.0 inch to approximately 2.0 inches. In some implementations, the permanent magnet may be approximately 0.7 inches by approximately 0.7 inches by approximately 1.5 inches.

[0050] In some embodiments using one or more electromagnets, the magnetic field strength of one or more magnetic field generators 136 can be adjusted by flowing different levels of current through one or more windings of one or more electromagnets of one or more magnetic field generators. In some embodiments, the current direction can be reversed to further control the magnetic field, and / or one or more windings can flow current in opposite directions at the same level (or different levels of current) to further control the magnetic field on the top surface of the substrate 106. The current can also be turned on and off and / or pulsed to further influence the generated magnetic field.

[0051] like Figure 15 As shown in curve 1500A, Gaussian levels at a substrate radius of 1502 are illustrated in diagram 1504. The diagram shows the first Gaussian level 1506 and the second Gaussian level 1508 on the substrate. At the first Gaussian level of 1506, no magnetic field is generated below the substrate; at the second Gaussian level of 1508, a magnetic field is generated below the substrate. (As shown in...) Figure 2 (As shown in the image). A magnetic field is generated below the substrate support base, increasing the Gaussian level above the magnetic field generator location on the substrate by approximately 30 to approximately 45 Gauss or more. The increase in Gaussian level is affected by the thickness of the substrate support base, which is the distance between the magnetic field generator below the support base and the top surface of the substrate. As described above, in some embodiments using discrete magnets, parameters can be used to adjust the number of magnets, the strength of the magnet material, and / or the total volume of the magnet material accordingly. In some embodiments using electromagnets, the amount of current, the direction of the current, and / or the effect of different currents and directions on adjacent windings of the electromagnet can be used to adjust the magnetic field generated on the top surface of the substrate. In some embodiments, such as Figure 3 As shown, the magnetic field generator moves further outward toward the edge of the substrate, and the Gaussian level peak 1518 will move outward toward the edge of the substrate by 1520. If compared with... Figure 2 Compared to maintaining the magnetic field strength at the position shown, Figure 3 The position of the magnetic field generator will also increase the peak Gaussian level as it gets closer to the substrate.

[0052] The inventors also discovered that, such as Figure 15As shown in graph 1500B (x-axis 1510 is the radial distance from the substrate center, y-axis 1512 is the incremental angle compared to the normal of the ions impacting the top surface of the substrate), the ion impact angle extends further towards the substrate edge from the normal 1516. By incorporating this device, the ion impact angle near the magnetic field generator during deposition is more normalized 1514, which increases deposition uniformity. A more normalized ion impact angle results in more ions being captured on the substrate surface. A less normalized ion impact angle results in more ions being lost, thus reducing deposition. As the magnetic field becomes stronger and more normalized, the ion trajectory also becomes more normalized, improving deposition quality by increasing deposition thickness through higher ion capture on the substrate surface. The position of the magnetic field generator below the substrate support base can be adjusted to provide maximum effect at the desired substrate location.

[0053] Figure 2 A cross-sectional view 200 depicts a substrate support base 104 with an annular support assembly 136A according to some embodiments, the annular support assembly having a permanent magnet forming a magnetic field generator. The annular support assembly 136A is attached to the lower surface 212 of the substrate support base 104, the lower surface 212 being parallel to the top surface 214 of the substrate support base 104. The annular support assembly 136A surrounds and is spaced apart from the bellows 202 by a distance 216 to allow proper operation of the substrate support base 104 as the diameter 218 of the bellows 202 expands as the bellows 202 contracts. Further discussion follows. Figures 4 to 7 As shown, the annular support assembly 136A includes a plurality of discrete permanent magnets that form a magnetic field generator beneath the substrate support base 104. Before the magnetic field can affect the ion trajectory above the substrate 106, the magnetic field of the plurality of discrete permanent magnets travels a distance 208 through the substrate support base 104 (see example...). Figure 14 The inventors have discovered that the plurality of discrete permanent magnets should have a minimum MGOe of about 30, preferably at least 32, to provide a magnetic field that can pass through the substrate support base 104 and still affect the ion trajectory on the substrate 106 during PVD deposition.

[0054] Because the inventors have observed that PVD deposition is thicker in the central region of substrate 106, it may be most advantageous to place the magnetic field generator (annular support assembly 136A with multiple discrete permanent magnets) radially outward from the center of substrate 106, closer to the edge region of substrate 106. In some embodiments, other devices in processing chamber 102, such as the annular lift 210, may prevent the magnetic field generator from being placed on the outer flange region 204 due to gap issues between substrate support base 104 and annular lift 210. In this case, the magnetic field generator can be positioned radially outward to influence ion trajectory near the edge region of substrate 106 while still maintaining the gap below substrate support base 104.

[0055] The inventors also observed that heat has an adverse effect on the magnetic field of the multiple discrete permanent magnets in the magnetic field generator. Heating of the permanent magnets can occur via conduction when the magnetic field generator is attached to a substrate support base 104 heated by plasma generated above the substrate support base 104. Heating can also occur via radiation from a heating lamp (not shown) below the substrate plane in the processing chamber 102 (e.g., for removing moisture from the substrate 106). In some embodiments, a heat shield 206 may surround the outer periphery of the annular support assembly 136A to reduce the effects of radiant heat from the heating lamp (not shown). The inventors have found that the magnetic material used for the multiple discrete permanent magnets should maintain a strong magnetic field at a temperature of at least about 200 degrees Celsius or higher to effectively influence ion trajectory in the processing chamber 102 during PVD deposition. In some embodiments, the magnetic material is a samarium cobalt-based material because samarium cobalt-based materials have an operating temperature range above 200 degrees Celsius while generating a strong magnetic field above 30 MGOe.

[0056] Figure 3 A cross-sectional view 300 depicts a substrate support base 104 with an annular support assembly 136B according to some embodiments, the annular support assembly having a permanent magnet forming a magnetic field generator. In a processing chamber 102 where there is no interference from other equipment below the substrate support base 104, the magnetic field generator can be further positioned radially outward, for example on an outer flange region 204, to more effectively influence ion trajectories in the edge regions of the substrate 106. In this example, another advantage of placing the magnetic field generator in the outer flange region 204 is that the distance 304 to the substrate surface is much smaller than... Figure 2 The distance 208 at the center position increases the magnetic field and provides an increase in the influence of ion trajectories in a similar magnetic field strength. The annular support assembly 136B is spaced 306 away from the sidewall 308 of the substrate support base to reduce heat conduction from the substrate support base 104.

[0057] In some embodiments, the annular support assembly 136B may be positioned radially outward as much as possible to enhance deposition in the edge regions of the substrate 106. (As described above regarding...) Figure 2 If the processing chamber 102 has a heat radiation source near the annular support assembly 136B, a heat shield 302 surrounding the outer periphery of the annular support assembly 136B can be used to reduce the effect of radiant heat on the multiple discrete permanent magnets in the annular support assembly 136B. In some embodiments (as shown), the heat shield 302 may include a partial lower flange to further help shield the discrete permanent magnets from radiant heat located below and slightly below the annular support assembly 136B in the processing chamber 102. As those skilled in the art will understand, the combination of the annular support assemblies 136A and 136B can be incorporated into the substrate support base 104 of the processing chamber 102 to provide a higher level of control over the magnetic field and ion trajectory to further influence deposition on the substrate 106.

[0058] Figure 4 An isometric view of an annular support assembly 400 having a permanent magnet 402 forming a magnetic field generator, according to some embodiments, is depicted. In some embodiments, the inner diameter 404 of the annular support assembly 400 is larger than the outer diameter of the bellows 202 of the substrate support base 104 to allow proper operation of the substrate support base 104. In some embodiments, the inner diameter 404 of the annular support assembly 400 is larger than the sidewall 308 of the outer flange region 204 of the substrate support base 104. In some embodiments, the outer diameter 406 of the annular support assembly 400 may be approximately 3 inches to approximately 4 inches larger than the inner diameter 404 to accommodate the depth of the permanent magnet 402. The permanent magnet 402 is symmetrically distributed around the annular support assembly 400 to generate a symmetrical magnetic field on the substrate 106. Figure 4 The annular support assembly 400 is one embodiment. Those skilled in the art will understand that although other annular support assemblies may hold multiple discrete permanent magnets in different ways, the annular support assembly will still serve as a magnetic field generator for this principle.

[0059] In some embodiments, the annular support assembly 400 has a first annular ring 412 (e.g., a bottom annular plate), which is flat and provides a support surface 420 on which a plurality of discrete permanent magnets can rest. The support surface 420 may also have grooves (described below) for holding each individual permanent magnet in place. The first annular ring 412 may be formed of 6061 aluminum or the like. A second annular ring 410 (e.g., an intermediate annular plate) is flat and has a plurality of openings in which a plurality of permanent magnets can be placed. The second annular ring 410 provides additional stability to the permanent magnets and prevents them from moving within the annular support assembly 400. In some embodiments, the second annular ring 410 is optional. A third annular ring 408 (e.g., a top annular plate) is flat and serves to hold the top of the plurality of permanent magnets. In some embodiments, the third annular ring 408 may be formed of 5052 aluminum. In some embodiments, the side support 414 may be formed separately from the third annular ring 408, or it may be formed as part of the third annular ring 408 and bent downward to provide vertical support for the first annular ring 412, the second annular ring 410, and the third annular ring 408. The first annular ring 412 may be held by the side support 414 via fasteners 418, such as, but not limited to, screws or bolts, which pass through an opening 416 in the side support 414 and enter one side of the first annular ring 412 and one side of the second annular ring 410.

[0060] In some embodiments (not shown), additional openings in the side support 414 allow the fastener 418 to support the third annular ring 408. In the illustrated example, the third annular ring 408 and the side support 414 are formed from a single piece of material. Inlet / outlet holes 422 may be provided in the first annular ring 412 and the second annular ring 410 to allow a fastening tool to insert a fastener (not shown) into one or more mounting holes 426, thereby attaching the annular support assembly 400 to the underside of the substrate support base 104. The diameter of the inlet / outlet hole 422 is larger than the diameter of the one or more mounting holes 426 to allow the fastener to pass completely through the inlet / outlet hole 422 and into the one or more mounting holes. The diameter of the one or more mounting holes 426 is smaller than the head of the fastener to allow the annular support assembly 400 to be held underside of the substrate support base 104.

[0061] In some embodiments, thermal isolator 424 can be used to reduce conductive heat transfer from substrate support base 104 to annular support assembly 400 and to permanent magnet 402. Thermal isolator 424 may include one or more insulating pads (as shown) mounted between the top surface of the third annular ring 408 and the bottom surface of substrate support base 104. Thermal isolator 424 provides a thermal break between substrate support base 104 and annular support assembly. Thermal isolator 424 may also be a single layer of thermal insulating material (not shown) disposed between the top surface of the third annular ring 408 and the bottom surface of substrate support base 104. In some embodiments, thermal isolator 424 may be formed of ceramic material or other thermal barrier material. The shape of thermal isolator 424 may vary, for example, circular (as shown), rectangular, and / or annular, etc. Although annular support assembly containing permanent magnets is depicted, thermal isolator 424 may also be used with annular support assembly containing electromagnets (described below).

[0062] Figure 5 An isometric view of a portion 500 of an annular support assembly 400 having a permanent magnet 402, according to some embodiments, is depicted. In some embodiments, a fastener 418 has a fastening portion 502 that protrudes through an opening 416 and enters a threaded hole 504 in a first annular ring 412 and a second annular ring 410. The head 506 of the fastener 418 holds a side support 414 to the first annular ring 412 and the second annular ring 410. Figure 6 A cross-sectional view of an annular support assembly 600 having a permanent magnet 402 according to some embodiments is depicted. In some embodiments, the recess 602 in the first annular ring 412 may be slightly larger to provide some tolerance for different permanent magnet sizes. Similarly, the opening 604 in the second annular ring 410 may also be slightly larger to provide some tolerance for different permanent magnet sizes. In some embodiments, the recess 602 and / or the opening 604 may be slightly larger than the specified or designed size of the permanent magnet by about 0.010 inches on all sides. By being slightly larger, variations in the size of the permanent magnet can be accommodated without additional machining or expensive high-tolerance materials or parts.

[0063] Figure 7An isometric view 700 depicts a permanent magnet 402 according to some embodiments. As described above, the volume of the magnetic material affects the strength of the permanent magnet. In some embodiments, the permanent magnet 402 may have a rectangular shape, with a width 704 and depth 706 of approximately 0.5 inches to approximately 0.75 inches, and a height 702 of approximately 1.0 inch to approximately 2.0 inches. In some embodiments, the rectangular shape of the permanent magnet may be approximately 0.7 inches wide by a width 704 multiplied by a depth 706 of approximately 0.7 inches multiplied by a height 702 of approximately 1.5 inches. The inventors have observed that when the permanent magnet 402 is processed in a processing chamber, the permanent magnet 402 outgasss, resulting in an increase in the chamber background pressure and impurities in the processing chamber. Magnetic materials are typically formed by sintering one or more materials together, which leaves gaps or spaces in the material, causing the sintered material to outgass when heated.

[0064] To eliminate or reduce the release of gas from the magnetic material of the permanent magnet 402, the permanent magnet 402 may have an optional encapsulation material 708 to encapsulate the permanent magnet 402. The optional encapsulation material 708 should be impermeable to any gas generated by the magnetic material and capable of withstanding temperatures of at least approximately 200 degrees Celsius. In some embodiments, the optional encapsulation material 708 may have a thickness 710 ranging from approximately 0.010 inches to approximately 0.100 inches. In some embodiments, the optional encapsulation material 708 may be a non-gas-releasing material and / or a coating, the non-gas-releasing material forming a structure in which the permanent magnet 402 is placed, and the coating may be applied directly to the outer surface of the permanent magnet 402 (e.g., non-gas-releasing spraying or painting, etc.). In some embodiments, the optional encapsulation material 708 may be a wrapper of non-gas-releasing material, wrapped or applied (e.g., via a non-gas-releasing adhesive, etc.) to the outer surface of the permanent magnet 402. In some embodiments, the optional encapsulation material 708 may be a non-ferrous plating formed by an electroplating process.

[0065] Figure 16A and 16B These are, respectively, a plan view and a side view depicting an annular support assembly 1600 having a plurality of discrete permanent magnets 1602 forming a magnetic field generator according to some embodiments. The annular support assembly 1600 is constructed similarly to the support assembly 400 in many relevant respects, as will become apparent from the following discussion.

[0066] exist Figure 16A and 16BIn the illustrated embodiment, the annular support assembly 1600 supports a plurality of nine permanent magnets 1602, although more or fewer permanent magnets 1602 may be included. In this embodiment, the permanent magnets 1602 may be constructed identically to the permanent magnets 402 discussed above. The permanent magnets 1602 are spaced apart from each other circumferentially. Figure 16C As shown, the annular support assembly 1600 supports the permanent magnet 1602 such that one or more of the permanent magnets 1602 extend along a longitudinal axis A that is not parallel to the vertical axis B.

[0067] In some embodiments, the inner diameter of the annular support assembly 1600 is 1604 ( Figure 16B The inner diameter 1604 of the annular support assembly 1600 is larger than the outer diameter of the bellows 202 of the substrate support base 104 to allow for proper operation of the substrate support base 104. In some embodiments, the inner diameter 1606 of the annular support assembly 1600 is larger than the sidewall 308 of the outer flange region 204 of the substrate support base 104. In some embodiments, the outer diameter 1606 of the annular support assembly 1600 is larger than the outer diameter of the bellows 202 of the substrate support base 104 to allow for proper operation of the substrate support base 104. Figure 16B The inner diameter 1604 can be approximately 3 to 4 inches larger to accommodate the depth of the permanent magnet 1602. In a specific embodiment, the permanent magnet 1602 may be symmetrically distributed around the annular support assembly 1600 to generate a symmetrical magnetic field on the substrate 106.

[0068] refer to Figure 16A and 16C In some embodiments, the annular support assembly 1600 has a first annular ring 1612 (which may also be interchangeably referred to as a bottom annular plate) and includes a support surface 1620 with recesses 1621 that receive and hold each individual permanent magnet 1602 in place. The first annular ring 1612 may be formed of aluminum 6061 or the like. The second annular ring 1610 (also referred to as an intermediate annular plate) is flat and has a plurality of openings 1611 (…). Figure 16C Multiple permanent magnets 1602 can be placed therein. A second annular ring 1610 provides additional stability to the permanent magnets 1602 and prevents them from moving within the annular support assembly 1600. In some embodiments, the second annular ring 1610 is optional. A third annular ring 1608 (also referred to as a top annular plate) is flat and serves to hold the tops of the multiple permanent magnets 1602. The third annular ring 1608 includes a support surface 1609 with a recess 1613 that receives and holds each individual permanent magnet 1602 in place. In some embodiments, the third annular ring 1608 may be formed of 5052 aluminum.

[0069] Also refer to Figure 16A and 16CAs shown, in some embodiments, an optional shielding member 1614 may surround the outer radial side of the permanent magnet 1602. The shielding member 1614 may be configured to provide thermal and / or radiation shielding to the permanent magnet 1602. The shielding member 1614 may be a solid-walled cylindrical member. The shielding member 1614 may be formed of a metallic or ceramic material such as stainless steel. The shielding member 1614 may be formed separately from the first annular ring 1612, the second annular ring 1610, and the third annular ring 1608. For example, the shielding member 1614 may be formed separately and attached to the underside of the third annular ring 1608 (e.g., support surface 1609) with fasteners such as screws or bolts, such that the shielding member 1614 is suspended from the third annular ring 1608. Alternatively, in embodiments, the shielding member 1614 may be formed as a portion of one or more of the first annular ring 1612, the second annular ring 1610, and the third annular ring 1608.

[0070] refer to Figure 16B In some embodiments, the third annular ring 1608 has a through hole 1626 for mounting the annular support assembly 1600 to the substrate support base 104. The through hole 1626 is configured to allow fasteners such as screws or bolts to pass through to connect to the holes in the underside of the substrate support base 104.

[0071] refer to Figure 16C In one embodiment, recesses 1621 and 1613 may have an L-shaped 90-degree profile to hold the respective permanent magnet 1602, such that the longitudinal axis A extends at a non-zero angle θ relative to the vertical axis B. In a specific embodiment, the angle θ depends on the radial offset distance 1615 between recesses 1621 and 1613. For example, as Figure 16C As shown, the radial position of the apex 1621a of the recess 1621 is radially offset from the radial position of the apex 1613a of the recess 1613 by an offset distance 1615 measured between the vertical axis B (extending through apex 1621a) and the vertical axis C (extending through apex 1613a). Therefore, when the permanent magnet 1602 extends through the opening 1611 and is held by the recesses 1621 and 1613, the longitudinal axis A of the permanent magnet 1602 extends at a non-zero angle θ relative to the vertical axis B. In embodiments, the angle θ can be between 0 and 180 degrees, such that the longitudinal axis A is not parallel to the vertical axis B. Therefore, for example, in situations such as... Figure 16C In the embodiment shown, the angle θ can be approximately 30 degrees and the upper end 1602a of the permanent magnet 1602 is positioned radially inside the lower end 1602b of the permanent magnet 1602.

[0072] In some embodiments, one or both of the recesses 1621 and 1613 may be oversized to provide some tolerance for different dimensions of the permanent magnet 1602. Similarly, the opening 1611 in the second annular ring 1610 may also be oversized to provide some tolerance for different dimensions of the permanent magnet 1602. In some embodiments, any of the recesses 1621, 1613, and opening 1611 may be oversized in all dimensions compared to the specified or designed dimensions of the permanent magnet 1602. By being slightly larger, variations in the dimensions of the permanent magnet can be accommodated without additional machining or expensive high-tolerance materials or parts.

[0073] In embodiments, the angle θ may be the same or different for each of the plurality of permanent magnets 1602. For example, in embodiments, the angle θ may be varied among the permanent magnets 1602 to achieve a desired magnetic field on the top surface of the substrate 106. For example, in embodiments, the offset distance 1615 between a pair of recesses 1621 and 1613 may vary circumferentially around the annular support assembly 1600. Furthermore, in embodiments, the angle θ may be manually or automatically adjusted for one or more of the plurality of permanent magnets 1602 to achieve a desired magnetic field on the top surface of the substrate 106. Such adjustment may be useful for compensating for non-uniformity of the magnetic field in the processing space 108. In specific embodiments, the angle θ of each permanent magnet 1602 may be adjusted by one or more actuators (not shown) configured to adjust the orientation of the permanent magnet 1602. In specific embodiments, such actuators may be communicatively coupled to a control system (not shown) to manually or automatically control the orientation of the permanent magnet 1602. In one implementation, such a control system may be configured to receive a measurement of the magnetic field strength on the top surface of the substrate as input, and to dynamically adjust the angle θ of one or more permanent magnets 1602 in response to these measurements to achieve the desired magnetic field strength on the top surface of the substrate.

[0074] In an embodiment, the individual arc-shaped support component 1700 can be formed as, for example, an arc-shaped segment of the annular support component 1600, such as... Figure 17 As shown. Therefore, as Figure 17As shown in more detail, each arcuate support assembly 1700 may have a bottom arcuate plate 1712, a middle arcuate plate 1710, and a top arcuate plate 1708. The bottom arcuate plate 1712 may be an arcuate segment of a first annular ring (bottom annular plate) 1612, the middle arcuate plate 1710 may be an arcuate segment of a second annular ring (middle annular plate) 1610, and the top arcuate plate 1708 may be an arcuate segment of a third annular ring (top annular plate) 1608. Each arcuate support assembly 1700 supports one or more discrete permanent magnets 1702. In some embodiments, the permanent magnets 1702 may be the same as the permanent magnets 1602 or 402 described above.

[0075] In one embodiment, the top arcuate plate 1708 may have a through hole 1726 to allow fasteners (e.g., screws or bolts) to pass through and connect to mating holes formed in the underside of the substrate support base 104. Therefore, each arcuate support assembly 1700 can be independently connected to and disconnected from the substrate support base 104 without having to disassemble the substrate support base 104 or the bellows 202. Thus, the arcuate support assembly 1700 facilitates and simplifies the connection and disconnection of the magnetic field generator from the substrate support base 104.

[0076] Although Figure 17 In one embodiment, two arc-shaped support assemblies 1700 are arranged as a ring assembly; however, in other embodiments, three or more arc-shaped support assemblies 1700 may be arranged to form a ring assembly. In some embodiments, one or more arc-shaped support assemblies 1700 may be connected to the substrate support base 104 and used without forming a complete circular or ring assembly. This arrangement can be used to address magnetic field inhomogeneities within the processing space 108. Furthermore, in some embodiments, each of the plurality of arc-shaped support assemblies 1700 may have the same arc length. In some embodiments, for example... Figure 17 As shown, at least two support components 1700 can have unequal arc lengths.

[0077] In some embodiments, at least one arcuate support assembly 1700 may include an optional shielding element surrounding the outer radial side of the permanent magnet 1702. For example, the optional shielding element may be the shielding element 1614 discussed above. Figure 16A and 16C The arc-shaped segment can be formed from the same material. For example... Figure 18 As shown in the curve, the Gaussian levels at a substrate radius of 1802 are illustrated in Figure 1804. The first Gaussian level 1806 and the second Gaussian level 1808 on the substrate are also shown. At the first Gaussian level of 1806, no magnetic field is generated below the substrate; at the second Gaussian level of 1808, a magnetic field is generated below the substrate. (As shown in the figure...) Figure 2(The location is shown). In the second Gaussian level 1808, the magnetic field is generated by nine discrete permanent magnets, each having a longitudinal axis extending parallel to the vertical axis. Gaussian level diagram 1804 also shows a third Gaussian level 1810 above the substrate, where below the substrate (in...) Figure 2 The magnetic field generated at the location depicted in the image is produced by nine discrete permanent magnets, each having a longitudinal axis extending at a non-zero angle θ relative to the vertical axis B. Figure 16C Specifically, the tested non-zero angle was approximately 30 degrees. The magnetic field generation beneath the substrate support base improved the Gaussian level above the substrate's magnetic field generator location. Furthermore, by orienting the permanent magnet at a non-zero angle θ (… Figure 16C ), achieving a Gaussian level 1808 higher than the second Gaussian level.

[0078] Figure 8 A cross-sectional view 800 depicts a substrate support base 104 having an annular support assembly 836A according to some embodiments, the annular support assembly having an electromagnet forming a magnetic field generator. The winding of the electromagnet is horizontally wound around a bellows 202. The annular support assembly 836A is positioned below the substrate support base 104 and externally fixed to the substrate support base 104. The electromagnet in the annular support assembly 836A forms a magnetic field generator below the substrate support base 104, the magnetic field generator generating a magnetic field above the substrate 106 to influence ion trajectory and deposition characteristics. Figure 9 A cross-sectional view 900 depicts a substrate support base 104 with an annular support assembly 836B according to some embodiments, the annular support assembly having an electromagnet forming a magnetic field generator. The windings of the electromagnet are horizontally wound around the outer periphery of the substrate support base 104. The annular support assembly 836B is positioned below and externally fixed to the outer flange region 204. The annular support assembly 836B forms a magnetic field generator below the substrate support base 104, which generates a magnetic field above the substrate 106 to influence ion trajectory and deposition characteristics. As those skilled in the art will understand, the combination of annular support assemblies 836A and 836B can be incorporated into the substrate support base 104 of the processing chamber 102 to provide a higher level of control over the magnetic field and ion trajectory to further influence deposition on the substrate 106.

[0079] Figure 10A cross-sectional view 1000 depicts a substrate support base 104 with an annular support assembly 836A according to some embodiments. The annular support assembly has a plurality of electromagnets 836A1, 836A2 forming a magnetic field generator. The windings of the plurality of electromagnets 836A1, 836A2 are horizontally wound around a bellows 202. The plurality of electromagnets 836A1, 836A2 are positioned below the substrate support base 104 and externally fixed to the substrate support base 104 via the annular support assembly 836A. The annular support assembly 836A and the plurality of electromagnets 836A1, 836A2 form a magnetic field generator below the substrate support base 104, which generates a magnetic field above the substrate 106 to influence ion trajectory and deposition characteristics. By using a plurality of electromagnets in the magnetic field generator, a higher level of control is achieved by manipulating the amount of current flowing through each electromagnet, the direction of the current flowing through each electromagnet, and whether the current flows at all.

[0080] Figure 11 A cross-sectional view 1100 depicts a substrate support base 104 with an annular support assembly 836B according to some embodiments. The annular support assembly 836B has a plurality of electromagnets 836B1, 836B2 forming a magnetic field generator. The windings of the plurality of electromagnets 836B1, 836B2 are horizontally wound around the outer periphery of the substrate support base 104. The plurality of electromagnets 836B1, 836B2 are positioned below an outer flange region 204 and externally fixed to the outer flange region 204 via the annular support assembly 836B. The annular support assembly 836B and the plurality of electromagnets 836B1, 836B2 form a magnetic field generator below the substrate support base 104, which generates a magnetic field above the substrate 106 to influence ion trajectory and deposition characteristics. By using a plurality of electromagnets in the magnetic field generator, a higher level of control is achieved by manipulating the amount of current flowing through each electromagnet, the direction of the current flowing through each electromagnet, and whether the current flows at all. As will be understood by those skilled in the art, the combination of multiple electromagnets 836A1, 836A2 in the annular support assembly 836A and multiple electromagnets 836B1, 836B2 in the annular support assembly 836B can be incorporated on the substrate support base 104 of the processing chamber 102 to provide a higher level of control over the magnetic field and ion trajectory to further influence the deposition on the substrate 106.

[0081] Figure 12 A top view 1200 depicts a first electromagnet 1208C and a second electromagnet 1208D from a ring-shaped support assembly forming a magnetic field generator, according to some embodiments. Multiple electromagnets can be as follows... Figure 10 and / or Figure 11The positioning is shown. A first electromagnet 1208C has at least one winding connected at one end to a first power supply 1202 and at the other end via an electrical connection 1212 to the first power supply 1202. A second electromagnet 1208D has at least one winding connected at one end to a second power supply 1204 and at the other end via an electrical connection 1214 to the second power supply 1204. In some embodiments, the first power supply 1202 and the second power supply 1204 may be a single power supply having multiple connections for providing the same and / or different currents to the first electromagnet 1208C and the second electromagnet 1208D. In some embodiments, the first power supply 1202 and the second power supply 1204 may be connected to and controlled by a controller 138 of the processing chamber 102. The controller 138 may individually and / or uniformly adjust the current level and / or current direction in the first power supply 1202 and the second power supply 1204 to change the magnetic field generated based on the processing recipe or based on tuning for a specific chamber type, etc. The controller 138 can also individually or simultaneously turn the power supplied to the first electromagnet 1208C and the second electromagnet 1208D on or off to further control the generated magnetic field. The controller 138 can also individually or simultaneously pulse the power supplied to the first electromagnet 1208C and the second electromagnet 1208D to further control the generated magnetic field.

[0082] In some embodiments, the first electromagnet 1208C may be positioned radially outside the second electromagnet 1208D, such that a space is formed between the first electromagnet 1208C and the second electromagnet 1208D to allow at least one optional cooling pipe 1210 to be inserted therein. The at least one optional cooling pipe 1210 is fluidly connected to an optional heat exchanger 1206. The at least one optional cooling pipe 1210 maintains the operating temperature of the first electromagnet 1208C and the second electromagnet 1208D to provide optimal magnetic field generation for influencing ion trajectory onto the substrate 106. Figure 13 An isometric view of a portion 1300 of a plurality of electromagnets 1302 forming a magnetic field generator having a cooling pipe 1304, according to some embodiments, is depicted. The cooling pipe 1304 is located between the plurality of electromagnets 1302 to allow heat transfer from the windings of the plurality of electromagnets 1302 to the cooling fluid flowing in the cooling pipe 1304. In some embodiments, a heat transfer material (not shown) may be used to fill any gaps between the cooling pipe 1304 and the windings to form a stronger heat transfer path between the windings and the cooling pipe 1304.

[0083] Implementations based on this principle can be carried out in hardware, firmware, software, or any combination thereof. Implementations can also be carried out as instructions stored using one or more computer-readable media, which can be read and executed by one or more processors. The computer-readable media may include any mechanism for storing or transmitting information in a machine-readable form (e.g., a computing platform or a “virtual machine” executing on one or more computing platforms). For example, the computer-readable media may include any suitable form of volatile or non-volatile memory. In some implementations, the computer-readable media may include a non-transitory computer-readable medium.

[0084] While the foregoing relates to specific implementations of this principle, other and further implementations of the principle may be conceived without departing from the essential scope of the foregoing.

Claims

1. An apparatus for influencing ion trajectory on a substrate, comprising: At least one support component is configured to be externally attached to a substrate support base and positioned below the substrate support base in the vacuum space of the processing chamber. and A magnetic field generator, fixed to the at least one support assembly, is configured to radiate a magnetic field on the top surface of the substrate and to influence the incident angle of ions impacting the substrate during plasma vapor deposition. The support assembly includes a top plate, a middle plate, and a bottom plate. The middle plate has multiple openings, and the magnetic field generator includes multiple discrete permanent magnets positioned within the multiple openings of the middle plate and held in place by the top plate and the bottom plate. At least one of the plurality of discrete permanent magnets extends longitudinally between the top plate and the bottom plate along a longitudinal axis extending between the top plate and the bottom plate, and The longitudinal axis forms a non-zero angle of up to 30 degrees relative to the vertical axis extending between the top plate and the bottom plate.

2. The device of claim 1, wherein at least one of the plurality of discrete permanent magnets is angled such that the upper end of the at least one discrete permanent magnet is located radially inward of the lower end of the at least one discrete permanent magnet.

3. The device of claim 1, wherein the longitudinal axis is not parallel to the vertical axis.

4. The device according to any one of claims 1 to 3, wherein the plurality of discrete permanent magnets are configured to operate at a temperature of at least 200 degrees Celsius or higher without loss of magnetic field strength.

5. The device of claim 4, wherein at least one of the plurality of discrete permanent magnets is formed of samarium cobalt material having a maximum energy product of at least 30 MGOe.

6. The device of claim 4, wherein the plurality of discrete permanent magnets comprises nine discrete permanent magnets symmetrically spaced apart in the at least one support assembly.

7. The device according to any one of claims 1 to 3, wherein the magnetic field generator further comprises at least one electromagnet fixed to the at least one support assembly.

8. The device according to any one of claims 1 to 3, wherein the at least one support component is an arcuate support component, the top plate is an arcuate plate, the middle plate is an arcuate plate, and the bottom plate is an arcuate plate.

9. The device of claim 8, wherein the plurality of discrete permanent magnets are configured to operate at a temperature of at least 200 degrees Celsius or higher without loss of magnetic field strength.

10. The device of claim 9, wherein at least one of the plurality of discrete permanent magnets is formed of samarium cobalt material having a maximum energy product of at least 30 MGOe.

11. The device of claim 10, wherein the plurality of discrete permanent magnets comprises nine discrete permanent magnets symmetrically spaced apart in the at least one support assembly.

12. The device of claim 8, wherein the magnetic field generator further comprises at least one electromagnet fixed to the at least one support assembly.

13. The device of claim 8, wherein the at least one support component comprises a plurality of arcuate support components arranged as a ring support component.

14. The device of claim 8, wherein the at least one support component is an arc-shaped support component, the top plate is an annular plate, the middle plate is an annular plate, and the bottom plate is an annular plate.

Images