A DBD treatment device based on vortex helical baffle plate type

Abstract

This invention provides a DBD gas reactor based on a vortex-driven spiral baffle. The device has a spiral baffle inside a cylindrical shell. Multiple regularly spaced semi-circular protrusions are arranged along the spiral surface of the spiral baffle. The central area of ​​the spiral baffle is tightly fitted with a porous manifold. Multiple small holes are arranged in the same position along the spiral surface of the spiral baffle. High-voltage and ground electrodes pass through these holes, and are led out from the terminal outlet covers at both ends through a staggered arrangement. This invention increases the gas residence time, allowing the gas to reach the reaction zone more evenly and greatly improving the conversion performance of the introduced gas. Simultaneously, the regularly spaced semi-circular protrusions on the spiral baffle generate vortices in the introduced gas, prolonging the reaction time. Finally, the device is designed with multiple gas introduction modes, allowing for adjustments to the gas introduction for different application scenarios, thus expanding the device's application range without limitations.

Description

Technical Field

[0001] This invention belongs to the field of gas conversion. It relates to a DBD (Deep Booster) processing device based on a vortex spiral baffle type. Background Technology

[0002] With the development of modern society and the continuous use of fossil fuels, excessive emissions of greenhouse gases such as CO2 have caused significant environmental pollution problems. Therefore, people have been searching for efficient methods to treat greenhouse gases and pollutants in the atmosphere. Currently, the main gas reforming reaction methods include thermocatalysis, electrochemical methods, and plasma catalysis. While thermocatalysis is simple, it suffers from drawbacks such as high energy consumption and the risk of catalyst deactivation due to excessively high temperatures. Electrochemical methods, while offering improved conversion efficiency, suffer from complex processes, high equipment costs, and poor economic viability. In the field of air pollution control and waste gas treatment, plasma technology has attracted considerable attention as a highly efficient gas conversion and purification method. Furthermore, plasma gas treatment is a technology widely used in science, industry, and medicine. Plasma is a state of charged particles formed when some or all atoms in a gas lose electrons; it possesses high temperature, high energy, and high reactivity. In plasma gas treatment, the properties of plasma are utilized for various applications, including material surface treatment, energy generation, and spectral analysis.

[0003] Conventional DBD reactors used in current plasma facilities for gas treatment have several drawbacks: 1) Conventional DBD reactors have low gas conversion rates and slow reaction rates. Much gas exits the reactor before it has a chance to be ionized. 2) Existing DBD reactors are designed for treating a single gas or two, limiting their application and hindering large-scale deployment for gas treatment in various plasma conditions. 3) Conventional DBD reactors for treating carbon-containing greenhouse gases like CO2 suffer from carbon buildup, significantly hindering gas flow as the reaction progresses. Furthermore, the catalyst placement is inconsistent. 4) For treating gases like CO2, conventional reactors often directly introduce CO2 along with other gases, which can negatively impact product formation. Summary of the Invention

[0004] 1. The technical problem to be solved: Currently, conventional DBD reactors used in plasma devices for gas processing suffer from problems such as low conversion rates, slow reaction rates, limited application areas, and carbon buildup.

[0005] 2. Technical Solution: To address the above problems, this invention provides a DBD processing device based on a vortex spiral baffle plate, comprising an outer quartz sleeve, wherein a spiral baffle plate is provided inside the outer quartz sleeve and is threadedly connected to the inner wall of the outer quartz sleeve, and both ends of the spiral baffle plate are connected to a seal. Multiple regular semi-circular protrusions are provided on the surface of the spiral baffle plate along the spiral line. The inner diameter region of the spiral baffle plate and the porous manifold plate connected to the seal at both ends are tightly fitted. Multiple small holes are provided on the surface of the spiral baffle plate along the spiral line, and the high ground electrode passes through these small holes, with both ends connected to the seal.

[0006] The porous manifold has a circular structure, with an air inlet at the top and multiple air outlet holes on the surface of the ring.

[0007] The sealer includes a quartz sleeve connection structure for fixing a porous manifold. An air inlet is provided above the porous manifold. A medium hole is provided below the sealer corresponding to the position surrounding the high ground electrode. An external sealing structure is provided around the sealer. The medium hole is wrapped with sealant. A second air inlet is provided on the side of the sealer.

[0008] The surrounding high-ground electrode includes a high-voltage electrode and a grounding electrode made of the same material, which are alternately placed inside the small holes of the spiral baffle. They are then led out from different ends by being arranged at different heights.

[0009] There are three gas inlet modes: 1) Mode 1: When the reactant gas is a single gas, such as CO2 containing oxygen atoms, it can be directly introduced into the reactor through the inlet of the outer quartz sleeve, spiraling into the reaction zone along the spiral baffle. 2) Mode 2: When the introduced gas is a single gas, such as CH4 or H2, it can enter the manifold through the pot-shaped inlet, and then evenly reach the reaction zone from the manifold, which is beneficial to improving the product conversion rate. 3) Mode 3: When two or more types of gases are introduced, one gas enters through the inlet of the outer quartz sleeve, and the other gases enter the reaction zone through the pot-shaped inlet. Examples include CH4 and CO2; H2 and CO2; N2 and H2; CH4, CO2, and O2.

[0010] The surface of the spiral baffle is coated with a thin film of SiO2.

[0011] The porous manifold is made of quartz.

[0012] The seal is made of polytetrafluoroethylene.

[0013] 3. Beneficial effects: This invention introduces two novel concepts—a spiral baffle and a manifold—into a plasma reactor. Utilizing DBD plasma technology, it significantly improves the conversion performance of the introduced gas. During gas conversion, two different gases are introduced into the reactor. Gases composed of O atoms, such as CO2, can be introduced through the outer spiral baffle. The spiral baffle is equipped with regularly shaped semi-circular protrusions, which generate eddies in the introduced gas, greatly extending the reaction time and significantly improving the conversion efficiency. This device can be adapted to different application scenarios by changing the gas introduction, without limitations, greatly expanding the application range of the device. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the device structure of the present invention. Figure 1 .

[0015] Figure 2 This is a schematic diagram of the device structure of the present invention. Figure 2 .

[0016] Figure 3 This is a schematic diagram of a vortex spiral baffle device.

[0017] Figure 4 This is a schematic diagram of a perforated manifold device.

[0018] Figure 5 This is a schematic diagram of a multi-electrode assembly structure.

[0019] Figure 6 This is an assembly diagram of a vortex spiral baffle and a manifold.

[0020] Figure 7 This is a schematic diagram of the seal.

[0021] Figure 8 This is a top view of the seal.

[0022] Figure 9 This is a schematic diagram of the sealed structure connecting the internal manifold.

[0023] Explanation of reference numerals in the attached drawings: 1. Sealer; 101. External sealing structure; 102. Internal connection structure with quartz sleeve; 103. Pot-shaped air inlet; 104. Terminal outlet cover; 105. Medium hole; 106. External air inlet; 2. Surrounding high-ground electrode; 201. High-voltage electrode; 202. Grounding electrode; 3. Spiral baffle; 301. Baffle unit; 302. Regular semi-circular protrusion; 303. Small hole; 4. Multi-hole manifold; 401. Manifold air inlet; 402. Manifold air outlet; 5. Outer quartz sleeve. Detailed Implementation

[0024] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0025] like Figure 1 and Figure 2 As shown, this invention provides a DBD treatment device based on a vortex spiral baffle type, including an outer quartz sleeve 5. A spiral baffle 3, connected to the inner wall of the outer quartz sleeve 5, is disposed inside the outer quartz sleeve 5. Both ends of the spiral baffle 3 are connected to a seal 1. Multiple regularly shaped semi-circular protrusions 302 are provided on the spiral surface 301 along the spiral line of the spiral baffle 3. This invention introduces the concept of a conventional spiral baffle from the mechanical field into a DBD reactor. By designing regularly shaped protruding circular blocking material on the baffle, vortices are formed when gas flows through, greatly increasing the reaction time and making the reaction more complete.

[0026] The inner diameter area of ​​the spiral baffle 1 and the porous manifold 4 connected to the sealer 1 at both ends are tightly fitted. Multiple small holes 303 are provided on the spiral baffle 1 along the spiral line surface 301. The holes 303 are passed through the high ground electrode 2 and the two ends are connected to the sealer 1.

[0027] The high-ground electrode 2 surrounds the inner side of the outer quartz sleeve 5 and, together with the spiral baffle 3 made of quartz material, forms a dielectric barrier discharge unit. The outer quartz sleeve connects to the sealer 1, which mainly serves to seal the device, forming a vacuum discharge area. It also connects to the manifold, allowing gas to enter from the manifold.

[0028] In one embodiment, such as Figure 3 As shown, the spiral baffle 3 is made of quartz glass and serves as the medium for the discharge region. The outer radius of the spiral baffle is 40 mm, and the inner radius is 20 mm. The inner diameter region is in close contact with the porous manifold 4. The small holes 303 with a radius of 4 mm are mainly used to fix the electrodes, fixing the surrounding high-ground electrodes 2 to the spiral baffle, making it an integrated reactor.

[0029] By using a multi-electrode surround arrangement, it can be better installed than existing inventions, forming a reaction whole with the baffle and achieving a higher reaction rate.

[0030] In one embodiment, a thin film such as SiO2 can be deposited on the spiral baffle plate, which can better adhere to the baffle plate and adsorb O atoms. The coating can also be adjusted according to specific circumstances. Using different materials for the coating on the spiral baffle plate makes it easier to break the bonds between molecules, thereby adsorbing O atoms and promoting the conversion of O-containing gases.

[0031] In one embodiment, such as Figure 4 As shown, the porous manifold has an outer radius of 20mm and is made of quartz. Combined with a spiral baffle, it forms a gas handling device, such as... Figure 6As shown.

[0032] The side length of the manifold inlet is 15mm. The auxiliary conversion gas is introduced through the manifold inlet 401 and then discharged as evenly as possible through the outlet 402 onto the discharge area of ​​the spiral baffle. The radius of the manifold outlet 402 is 1mm.

[0033] The porous manifold structure allows other gases to flow evenly from the manifold to the discharge area, increasing reaction efficiency and reducing the direct discharge of unreacted gases from the reactor, thus saving resources. Simultaneously, the compact structure integrates the spiral baffle and manifold into a single device, reducing the overall size of the apparatus and improving energy utilization.

[0034] The porous manifold allows other gases involved in the main gas reaction to enter the discharge region evenly, ensuring efficient participation of the gases in the ionization reaction. Simultaneously, the compact manifold and spiral baffle structure simplifies the overall device structure, facilitates operation, and reduces processing costs.

[0035] In one embodiment, such as Figure 5 As shown, the surrounding high-ground electrode 2 includes a high-voltage electrode 201 and a grounding electrode 202, both of which are made of copper rods with a radius of 4 mm. The high-voltage electrode 201 and the grounding electrode 202 are alternately placed in the small holes of the spiral baffle plate to discharge in the discharge area.

[0036] The multi-electrode surround arrangement reduces the initial discharge voltage and allows the reactant gases to first transform from ground-state molecules to excited-state molecules before reacting. This facilitates reactions between different introduced gases, reduces energy consumption, and improves reaction performance. Simultaneously, the close contact of multiple high-voltage and grounding electrodes with the external quartz tube creates a favorable vacuum discharge environment in the discharge region.

[0037] In one embodiment, such as Figure 7 , Figure 8 , Figure 9 As shown, the seal 1 includes a quartz sleeve connection structure 102 for fixing the porous manifold 4. An air inlet 103 is provided above the porous manifold 4, serving as the first air inlet, allowing gases such as N2 and H2 to be introduced, enabling them to reach the reaction area more evenly. A medium hole 105 is provided below the seal 1, corresponding to the position surrounding the high-ground electrode 2. An external sealing structure 101 is provided around the seal 1. The medium hole 105 is wrapped with sealant. A second air inlet 106 is provided on the side of the seal 1. Gases composed of O atoms, such as CO2, are introduced through the second air inlet from the outer spiral baffle.

[0038] Gas is introduced into the manifold area at the center of the device through the pot-shaped inlet 103. 105 is a dielectric hole with a radius of 4mm, which allows the electrode structure to be better connected to the outside. At the same time, the dielectric hole is wrapped with sealant to prevent gas leakage.

[0039] In one embodiment, the seal 1 is made of polytetrafluoroethylene, which can withstand high temperatures.

[0040] This device introduces two novel concepts—a "vortex-type spiral baffle" and a "porous manifold"—into the DBD reactor, creating a highly efficient DBD reaction device for processing different gases. First, multiple high-voltage and grounded metal electrode columns are distributed intermittently within the quartz tube. When the high voltage is applied, a discharge is generated, and this electric field ionizes surrounding gas molecules or atoms. This ionization process produces positive ions and free electrons. Positive ions, due to their large mass and relatively slow velocity, are accelerated in the electric field and adsorbed onto the electrodes. Free electrons are accelerated by the electric field, forming a space charge region near the electrodes. When there are enough free electrons in the space charge region, they gain sufficient energy to overcome the ionization energy of the gas molecules, leading to further ionization reactions. This triggers a cascade discharge process, generating plasma.

[0041] The vortex spiral baffle, tightly fitted to the quartz tube, serves to fix the high-voltage and grounding copper pillars. Simultaneously, the spiral baffle acts as a dielectric for the servo structure, forming DBD discharge. The main treated gases, such as CO2 containing O atoms, enter through the external inlet. These gases pass through the raised circular structures on the spiral baffle, forming vortices and increasing the plasma treatment time. Additionally, a thin SiO2 film is coated on the spiral baffle to adsorb O atoms. Other reactive gases, such as H2 and CH4, enter through the central inlet into the porous cylindrical manifold. The gas flows evenly from the manifold to the discharge area, resulting in higher reactant conversion rates and more uniform ionization.

Claims

1. A DBD treatment device based on a vortex helical baffle plate, comprising an outer quartz sleeve (5), characterized in that: The outer quartz sleeve (5) is provided with a spiral baffle (3) that is tightly connected to the inner wall of the outer quartz sleeve (5) by threads. The two ends of the spiral baffle (3) are connected to the seal (1). Multiple regular semi-circular protrusions (302) are provided on the spiral baffle (3) along the spiral line surface (301). The central area of ​​the spiral baffle (3) and the porous manifold (4) connected to the seal (1) at both ends are tightly fitted. The spiral baffle (3) along the spiral line surface (301) is provided with multiple regular semi-circular protrusions (302). The spiral surface (301) is provided with multiple small holes (303) in the same position. The high-voltage electrode and the ground electrode (2) that are tightly connected to the spiral baffle plate pass through the small holes (303) respectively. The high-voltage end and the ground end are led out from different ends and then connected to the seal (1). The porous busbar (4) is a circular ring structure. The upper part of the porous busbar (4) is the busbar inlet (401). The surface of the ring is provided with multiple busbar outlet holes (402).

2. The DBD processing device based on a vortex spiral baffle plate as described in claim 1, characterized in that: The seal (1) includes a quartz sleeve connection structure (102) for fixing a porous manifold (4). An air inlet (103) is provided above the porous manifold (4). A medium hole (105) is provided below the seal (1) corresponding to the position surrounding the high ground electrode (2). A terminal outlet cover structure is provided around the seal (1) to allow the grounding and high ground wires to be led out. An external sealing structure (101) is provided around the seal (1). The medium hole (105) is wrapped with sealant. A second air inlet is provided on the side of the seal (1).

3. The DBD processing device based on a vortex spiral baffle plate as described in claim 1, characterized in that: The high-voltage electrode and the ground electrode (2) include a high-voltage electrode (201) and a ground electrode (202) made of the same material. The high-voltage electrode (201) and the ground electrode (202) are alternately placed in the small holes (303) of the spiral baffle (3).

4. The DBD processing device based on a vortex helical baffle plate as described in any one of claims 1-3, characterized in that: The surface of the spiral baffle (3) is coated with a SiO2 thin film.

5. The DBD processing device based on a vortex spiral baffle plate as described in any one of claims 1-3, characterized in that: The porous manifold (4) is made of quartz.

6. The DBD processing device based on a vortex helical baffle plate as described in any one of claims 1-3, characterized in that: The material of the seal (1) is polytetrafluoroethylene.

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