A gas treatment device based on liquid-cooled helical baffles

Abstract

The application provides a gas treatment device based on liquid cooling spiral baffle, which is characterized in that: an outer quartz sleeve is internally provided with a liquid cooling spiral baffle, both ends of which are provided with a sealing device; the liquid cooling spiral baffle is a double-layer structure, and is tightly combined with the outer quartz sleeve through threads; meanwhile, the middle of the two layers of quartz materials is a sealing structure, and the middle is used for passing circulating liquid cooling water; the inner diameter area of the liquid cooling spiral baffle is tightly combined with a porous collector plate, both ends of which are connected with the sealing device; a plurality of small holes with the same position are arranged on the surface of the liquid cooling spiral baffle along the spiral line; a high-voltage electrode and a grounding electrode respectively pass through the small holes, and are led out from the terminal cover at both ends through a high-low staggered arrangement. The structure of the application increases the residence time of the gas, so that the gas can more uniformly reach the reaction area, and the conversion performance of the passed-in gas is improved. Through an external water pump, circulating water at a certain temperature is passed into the internal interlayer area, so that the reaction temperature is strictly controlled.

Description

Technical Field

[0001] This invention belongs to the field of plasma gas conversion and relates to a gas processing device based on a liquid-cooled spiral baffle. Background Technology

[0002] With the development of modern society and the continuous use of fossil fuels, excessive emissions of greenhouse gases such as CO2 have caused significant environmental pollution problems. Therefore, people have been searching for efficient methods to treat greenhouse gases and pollutants in the atmosphere. Currently, the main gas reforming reaction methods include thermocatalysis, electrochemical methods, and plasma catalysis. While thermocatalysis is simple, it suffers from drawbacks such as high energy consumption and the risk of catalyst deactivation due to excessively high temperatures. Electrochemical methods, while offering improved conversion efficiency, suffer from complex processes, high equipment costs, and poor economic viability. In the field of air pollution control and waste gas treatment, plasma technology has attracted considerable attention as a highly efficient gas conversion and purification method. Furthermore, plasma gas treatment is a technology widely used in science, industry, and medicine. Plasma is a state of charged particles formed when some or all atoms in a gas lose electrons; it possesses high temperature, high energy, and high reactivity. In plasma gas treatment, the properties of plasma are utilized for various applications, including material surface treatment, energy generation, and spectral analysis.

[0003] Currently, various plasma treatment devices have achieved significant results in practical applications, but there is still room for improvement in terms of processing efficiency, energy consumption, and device structure. Currently, DBD (Dielectric Barrier Discharge) devices are commonly used for treating gases using plasma technology. DBD involves inserting an insulating dielectric into the high-voltage and grounding electrodes, simultaneously generating a discharge in the gas between the two electrodes using an electric field. Due to the presence of the dielectric, current cannot pass directly but forms a discharge channel along the dielectric surface. Its advantages include a wide gas pressure range, a broad discharge frequency range, simple structure, and uniform and stable discharge; however, dielectric barrier discharge requires high power output, resulting in unnecessary energy waste.

[0004] The patent CN220214464U uses a combination of plasma technology and photocatalysis technology, which can improve the gas conversion rate to a certain extent. However, the design cost will be greatly increased because ultraviolet lamps and high-pressure reaction devices need to be installed at the same time. In addition, since temperature has different effects on the two, it is also difficult to control the temperature.

[0005] Patent CN209815681U utilizes a spiral electrode structure, which modifies the inner electrode into a spiral structure. While this generates cyclones to some extent and improves gas processing efficiency, it may also affect the conductivity of the electrodes. Furthermore, some gases do not form cyclones, leading to uneven reaction.

[0006] Patent CN207150933U promotes the high-speed reaction by using segmented processing in different reactors and simultaneous tail flame activation. It utilizes four DBD reactors to achieve uniform and high-speed processing of gas conversion efficiency. However, the overall device structure is relatively complex, and the simultaneous discharge drive of the four DBD reactors requires high energy, which cannot effectively achieve the purpose of energy saving.

[0007] Currently, conventional DBD reactors for gas treatment in plasma devices have several drawbacks: 1) Conventional DBD reactors have low gas conversion rates and slow reaction rates. Much gas exits the reactor before it has a chance to be ionized. 2) Existing DBD reactors are designed for treating a single gas or two, limiting their application and hindering large-scale deployment for gas treatment in various plasma conditions. 3) Conventional DBD devices for treating carbon-containing gases such as CO2 suffer from carbon buildup, significantly hindering gas flow as the reaction progresses, and also presenting challenges in maintaining a stable catalyst loading position. 4) For gases like CH4, conventional reactors often directly introduce CH4 along with other gases, affecting product formation. 5) Conventional DBD devices place certain requirements on the high-temperature and high-pressure resistance of the internal media materials, making temperature a crucial factor influencing the reaction. Summary of the Invention

[0008] 1. The technical problem to be solved: How can plasma processing devices improve processing efficiency, reduce energy consumption, simplify structure, and lower costs when processing gases?

[0009] 2. Technical Solution: To address the above problems, this invention provides a gas treatment device based on a liquid-cooled spiral baffle, comprising an outer quartz sleeve, inside which a liquid-cooled spiral baffle is disposed, and at both ends are sealing devices. The liquid-cooled spiral baffle has a double-layer structure, with a sealing structure between the two quartz layers for circulating liquid-cooled water to pass through. The inner diameter area of ​​the liquid-cooled spiral baffle is tightly fitted with a porous manifold. Both ends of the liquid-cooled spiral baffle are connected to the sealing devices. Multiple small holes are provided at the same position on the surface of the liquid-cooled spiral baffle along the spiral line, through which high-voltage and grounding electrodes pass respectively, and at both ends are connected to the sealing devices.

[0010] Each of the small holes is sealed.

[0011] The surface of the liquid-cooled spiral baffle is coated with a thin film of SiO2.

[0012] The porous manifold has a circular ring structure, with an air inlet at the top and multiple air outlets on the surface of the ring.

[0013] The porous manifold is made of quartz.

[0014] The high-voltage and grounding electrodes include a high-voltage electrode and a grounding electrode made of the same material, and the high-voltage electrode and the grounding electrode are alternately placed in the small holes of the liquid-cooled spiral baffle.

[0015] The sealer includes a quartz sleeve connection structure for fixing a porous manifold. An air inlet is provided above the porous manifold. A medium hole is provided below the sealer corresponding to the high voltage and grounding electrodes. An external sealing structure is provided around the sealer. The medium hole is wrapped with sealant.

[0016] The seal is made of polytetrafluoroethylene.

[0017] 3. Beneficial effects: This invention is based on a multi-electrode structure using a liquid-cooled spiral baffle and a porous manifold. By introducing two novel concepts—the spiral baffle and the manifold—into the plasma reactor and utilizing DBD plasma technology, the conversion performance of the introduced gas can be significantly improved. During gas conversion, two different gases are introduced into the reactor. Gases composed of O atoms, such as CO2, can be introduced through the outer spiral baffle. The liquid-cooled spiral baffle is composed of a double-layered medium, and circulating water at a certain temperature is introduced into the inner layered region by an external water pump, strictly controlling the reaction temperature. When the gas passes through the liquid-cooled spiral baffle structure, the reaction time is greatly extended. Simultaneously, the spiral baffle is coated with a SiO2 thin film, which can adsorb O atoms and promote high-speed reaction. Finally, the high-ground electrodes are mounted on the spiral baffle in a rotating, staggered manner, generating a unified discharge in the internal region of the glass tube. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of the present invention.

[0019] Figure 2 This is a cross-sectional view of the structure of the present invention.

[0020] Figure 3 This is a schematic diagram of a liquid-cooled spiral baffle device.

[0021] Figure 4 This is a schematic diagram of a perforated manifold device.

[0022] Figure 5 This is a schematic diagram of a multi-electrode assembly structure.

[0023] Figure 6 This is an assembly diagram of a liquid-cooled spiral baffle and a manifold.

[0024] Figure 7 This is a schematic diagram of the external medium pipe connection and seal.

[0025] Figure 8 This is a top view of the external medium pipe connection and seal.

[0026] Figure 9 This is a schematic diagram of the sealed structure connecting the internal manifold.

[0027] Figure reference numerals and descriptions: 1. Liquid-cooled spiral baffle; 101. Single baffle unit; 102. Orifice; 2. Perforated manifold; 201. Manifold inlet; 202. Outlet; 3. High-voltage and grounding electrodes; 301. High-voltage electrode; 302. Grounding electrode; 4. Outer quartz sleeve; 5. Seal; 501. External sealing structure; 502. Quartz sleeve connection structure; 503. Medium hole; 504. Terminal outlet cover; 6. External air inlet pipe; 7. Liquid-cooled circulating water inlet / outlet; 701. Liquid-cooled circulating water inlet; 702. Liquid-cooled circulating water outlet; 8. Air inlet. Detailed Implementation

[0028] The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0029] like Figure 1 and Figure 2 As shown, a gas processing device based on a liquid-cooled spiral baffle includes an outer quartz sleeve 4, within which a liquid-cooled spiral baffle 1 is installed. Sealers 5 are located at both ends. The liquid-cooled spiral baffle 1 has a double-layer structure, with a sealed structure between the two quartz layers. Circulating liquid cooling water is introduced through this sealed structure to control the reaction temperature and prevent excessive temperature from burning the medium and disrupting the reaction. Furthermore, the introduction of gas into the liquid-cooled spiral baffle 1 significantly increases the reaction time, resulting in a more complete reaction.

[0030] This device includes a liquid-cooled spiral baffle 1, a porous manifold 2, high-voltage and grounding electrodes 3, an outer quartz sleeve 4, a seal 5, and an external inlet pipe 6. The high-voltage and grounding electrodes 3 are arranged around the inner side of the outer quartz sleeve 4, forming a dielectric barrier discharge unit together with the liquid-cooled spiral baffle 1 made of dielectric material. This arrangement of the high-voltage and grounding electrodes reduces the initial discharge voltage and allows the reacting gases to first change from ground-state molecules to excited-state molecules before reacting, facilitating reactions between different introduced gases, reducing energy consumption, and improving reaction performance.

[0031] The external medium pipe connection and sealant 5 primarily serve to seal the device, creating a vacuum discharge area. It also connects to the porous manifold 2, allowing gas to enter through it. For example... Figure 4 As shown, the porous manifold 2 has a circular structure, with an air inlet 201 at the top and multiple air outlets 202 on the surface of the ring.

[0032] In one embodiment, the inner diameter region of the liquid-cooled spiral baffle 1 and the porous manifold 2 are tightly fitted together. Both ends of the liquid-cooled spiral baffle 1 are connected to the seal 5. Each ring of the liquid-cooled spiral baffle 1 has multiple small holes 102 in the same position on each baffle unit 101. The high-voltage and grounding electrodes 3 pass through the small holes 102 respectively and are connected to the seal 5 at both ends.

[0033] The liquid-cooled spiral baffle 1 is made of double-layered quartz glass, with a sealed structure between the two quartz layers through which circulating liquid cooling water flows. Figure 3 The inner layer shown is a model simulating the introduction of condensate. Simultaneously, the liquid-cooled spiral baffle 1 also serves as the medium for the discharge region, effectively blocking the discharge. The outer radius of the liquid-cooled spiral baffle is 40mm, the inner radius is 20mm, and the interlayer gap is 5mm. The interlayer is sealed internally, with the inner diameter area tightly fitted to the manifold. The 4mm radius orifice 102 primarily fixes the electrodes, securing the high-voltage and grounding electrodes 4 to the spiral baffle, thus forming an integrated reactor. In one embodiment, each small hole 102 is well sealed to ensure that the condensate circulating water does not come into contact with the electrode structure.

[0034] In one embodiment, a thin film such as SiO2 can be deposited on the liquid-cooled spiral baffle 1, which can better adhere to the baffle and play the role of adsorbing O atoms. At the same time, the coating can also be adjusted according to the specific situation.

[0035] In one embodiment, the manifold has an outer radius of 20 mm and a thickness of 4 mm, is made of quartz, and is combined with a spiral baffle to form a gas handling device. 201 is the air inlet of the manifold, with a side length of 15 mm. When gas enters through 201, it is then discharged as evenly as possible through the outlet 202 to the discharge area on the spiral baffle. The radius of the outlet 202 is 1 mm.

[0036] The porous manifold 2 allows other gases to flow evenly from the manifold to the discharge area, increasing reaction efficiency and reducing the direct discharge of unreacted gases from the reactor, thus saving resources. Simultaneously, the compact structure integrates the spiral baffle and manifold into a single device, reducing the overall size of the device and improving energy utilization.

[0037] In one embodiment, such as Figure 5 As shown, the high-voltage and grounding electrodes 4 include a high-voltage electrode 301 and a grounding electrode 302 made of the same material. The high-voltage electrode 301 and the grounding electrode 302 are alternately placed in the small holes 102 of the liquid-cooled spiral baffle 1 to discharge in the discharge area.

[0038] The quartz sleeve 4 is provided with a liquid cooling circulating water inlet and outlet 7, which includes a liquid cooling circulating water inlet 701 and a liquid cooling circulating water outlet 702, for passing the circulating liquid cooling water into the interlayer of the liquid cooling spiral baffle.

[0039] like Figure 6 The diagram shows the assembly of a liquid-cooled spiral baffle and a porous manifold.

[0040] like Figure 7 , Figure 8 and Figure 9 As shown, the sealant 5 includes a quartz sleeve connection structure 502 for fixing the porous manifold 2. A terminal outlet cover 504 is provided above the porous manifold 2, and the terminal outlet cover 504 has an air inlet 8 to allow gas to enter the manifold area in the center of the device. This allows the electrode structure to be better connected to the outside, and the medium hole is wrapped with sealant to prevent air leakage. A medium hole 503 is provided below the sealant 5 at the position corresponding to the high voltage and grounding electrodes 4. The radius of the medium hole 503 is 4mm. An external sealing structure 501 is provided around the sealant 5, and the medium hole 503 is wrapped with sealant. An external air inlet pipe 6 is provided on the side of the sealant 5.

[0041] In one example, the gas inlet method has three modes: 1) Mode 1: When the reactant gas is a single gas, such as CO2 containing O atoms, it can be directly introduced into the reactor through the inlet of the outer quartz sleeve, spiraling into the reaction zone along the spiral baffle. 2) Mode 2: When the introduced gas is a single gas, such as CH4 or H2, it can enter the manifold through the pot-shaped inlet, and then evenly reach the reaction zone from the manifold, which is beneficial to improving the product conversion rate. 3) Mode 3: When two or more types of gases are introduced, one gas enters through the inlet of the outer quartz sleeve, and the other gases enter the reaction zone through the pot-shaped inlet. Examples include CH4 and CO2; H2 and CO2; CH4, CO2, and O2.

[0042] This invention introduces two novel concepts—a "liquid-cooled spiral baffle" and a "porous manifold"—into a DBD reactor, creating a novel DBD reaction device for efficiently processing different gases. First, multiple high-voltage and grounded metal electrode columns are distributed intersectingly within a quartz tube. When the high voltage is applied, a discharge is generated, and this electric field ionizes surrounding gas molecules or atoms. This ionization process produces positive ions and free electrons. Positive ions, due to their large mass and relatively slow velocity, are accelerated in the electric field and adsorbed onto the electrodes. Free electrons are accelerated by the electric field, forming a space charge region near the electrodes. When there are enough free electrons in the space charge region, they gain sufficient energy to overcome the ionization energy of the gas molecules, leading to further ionization reactions. This triggers a cascade discharge process, generating plasma.

[0043] A liquid-cooled spiral baffle, tightly fitted to the quartz tube, serves to fix the high-voltage and grounding copper pillars. Simultaneously, the spiral baffle acts as a dielectric for the servo structure, forming a DBD discharge. When gases such as CO2 enter from the external inlet, the residence time is significantly increased by the spiral baffle structure, thus extending the plasma treatment time. During the reaction, condensate is continuously introduced into the interlayer of the spiral baffle, ensuring the reaction is strictly controlled at a specific temperature. Furthermore, a thin SiO2 film is coated on the spiral baffle to adsorb oxygen atoms. The gas enters the porous cylindrical manifold through the central inlet, flowing uniformly from the manifold to the discharge area, resulting in higher reactant conversion and more uniform ionization.

Claims

1. A gas handling device based on a liquid-cooled spiral baffle, comprising an outer quartz sleeve (4), characterized in that: The outer quartz sleeve (4) is provided with a liquid-cooled spiral baffle (1) and a seal (5) at both ends. The liquid-cooled spiral baffle (1) is a double-layer structure with a seal between the two quartz layers. The middle is used to pass through circulating liquid-cooled water. The inner diameter area of ​​the liquid-cooled spiral baffle (1) is tightly fitted with the porous manifold (2). The two ends of the liquid-cooled spiral baffle are connected to the seal (5). Each baffle unit (101) on the liquid-cooled spiral baffle (1) is provided with multiple small holes (102) in the same position. The high voltage and grounding electrodes (3) pass through the small holes (102) respectively and are led out from different ends and connected to the seal (5) in an alternating manner. The porous manifold (2) is a circular structure. The upper part of the porous manifold (2) is an air inlet (201). The surface of the circular ring is provided with multiple air outlets (202).

2. The gas processing device based on a liquid-cooled spiral baffle as described in claim 1, characterized in that: Each of the holes (102) is sealed.

3. The gas processing device based on a liquid-cooled spiral baffle as described in claim 1, characterized in that: The surface of the liquid-cooled spiral baffle (1) is coated with a thin film of SiO2.

4. The gas handling device based on a liquid-cooled spiral baffle as described in any one of claims 1-3, characterized in that: The porous manifold (2) is made of quartz.

5. The gas processing device based on a liquid-cooled spiral baffle as described in any one of claims 1-3, characterized in that: The high-voltage and grounding electrodes (3) include a high-voltage electrode (301) and a grounding electrode (302) made of the same material. The high-voltage electrode (301) and the grounding electrode (302) are alternately placed in the small holes (102) of the liquid-cooled spiral baffle (1).

6. The gas handling device based on a liquid-cooled spiral baffle as described in any one of claims 1-3, characterized in that: The seal (5) includes a quartz sleeve connection structure (502) for fixing a porous manifold (2). An air inlet (8) is provided above the porous manifold (2). A medium hole (503) is provided below the seal (5) at the position corresponding to the high voltage and grounding electrodes (3). An external sealing structure (501) is provided around the seal (5). The medium hole (503) is wrapped with sealant.

7. The gas handling device based on a liquid-cooled spiral baffle as described in any one of claims 1-3, characterized in that: The quartz sleeve (4) is provided with an inlet and outlet (7) for circulating liquid water, which is used to pass the circulating liquid water into the interlayer of the liquid-cooled spiral baffle.

8. The gas processing device based on a liquid-cooled spiral baffle as described in claim 6, characterized in that: The seal (5) is made of polytetrafluoroethylene.

Images