System for monitoring cleaning etching gas dissociation and methods of use thereof

Abstract

The present disclosure provides a system for monitoring dissociation rate of a cleaning etching gas. The system includes a chamber, a pressure module, a flow module, and an analysis module. The chamber is configured to pass the cleaning etching gas to etch a semiconductor film. The pressure module is configured to measure a pressure change curve of a pressure change in the chamber over time. The flow module is configured to measure a cleaning etching gas flow of the cleaning etching gas passed into the chamber. The analysis module is configured to calculate the dissociation rate of the cleaning etching gas based on the pressure change curve, the cleaning etching gas flow, a system correction value, a cleaning etching gas flow reference value, and a cleaning etching gas pressure reference value, wherein the cleaning etching gas pressure reference value is a pressure value of the cleaning etching gas with the cleaning etching gas flow reference value when the cleaning etching gas is not dissociated.

Description

Technical Field

[0001] This disclosure relates to a system for monitoring the dissociation rate of cleaning etching gases and its usage. Background Technology

[0002] Deposition processes may be accompanied by cleaning processes to remove deposit residues from the cavity. However, due to factors such as aging of process-related tools, cleaning processes may become ineffective, leaving excessive deposit residues in the cavity and affecting the yield of the deposition process. When the efficiency of the cleaning process decreases, the cleaning process time is often increased to ensure the removal of deposit residues, resulting in wasted process time. Moreover, confirming whether deposit residues have been removed may require stopping machine operation, thus reducing process efficiency. Therefore, a new system and method for using the system are needed to effectively monitor the implementation efficiency of the cleaning process. Summary of the Invention

[0003] This disclosure provides a system for monitoring the dissociation rate of a cleaning and etching gas. The system includes a chamber, a pressure module, a flow module, and an analysis module. The chamber is used to introduce the cleaning and etching gas to etch a semiconductor film. The pressure module measures the pressure change curve within the chamber over time. The flow module measures the flow rate of the cleaning and etching gas introduced into the chamber. The analysis module calculates the dissociation rate of the cleaning and etching gas based on the pressure change curve, the cleaning and etching gas flow rate, a system calibration value, a reference value for the cleaning and etching gas flow rate, and a reference value for the cleaning and etching gas pressure, wherein the reference value for the cleaning and etching gas pressure is the pressure of the cleaning and etching gas without dissociation, given the reference value for the cleaning and etching gas flow rate.

[0004] In one embodiment, the analysis module is used to calculate the dissociation rate based on the first pressure at a first time, the cleaning and etching gas flow rate, the system correction value, the cleaning and etching gas flow rate reference value, and the cleaning and etching gas pressure reference value in the pressure change curve at a first time, and the first time is the time at the highest point in the rising section of the pressure change curve from the first platform to the second platform.

[0005] In one embodiment, the cavity is further used to introduce inert gas; the flow module is further used to measure the inert gas flow rate of the inert gas introduced into the cavity; the analysis module is further used to calculate the system correction value based on the pressure change curve, the inert gas flow rate, the inert gas flow rate reference value and the inert gas pressure reference value; and the inert gas pressure reference value is the pressure value of the inert gas with the inert gas flow rate reference value.

[0006] In one embodiment, the analysis module is used to calculate the system correction value based on the second pressure, inert gas flow rate, inert gas flow rate reference value and inert gas pressure reference value at the second time in the pressure change curve, and the second time is after the inert gas is introduced into the cavity and approximately when the cleaning etching gas is introduced into the cavity.

[0007] In one embodiment, the system further includes a recording module and a display module. The recording module records multiple dissociation rates obtained by repeatedly using the analysis module, and records these dissociation rates into dissociation rate change curves according to the corresponding multiple repetitions. The display module displays the dissociation rate change curves and displays a notification when the dissociation rate change curves include dissociation rates below a certain value.

[0008] This disclosure also provides a method for using a system to monitor the dissociation rate of a cleaning etching gas. The method includes the following operations: introducing a cleaning etching gas into a cavity to etch a first semiconductor film in the cavity; measuring a first pressure change curve of the pressure within the cavity over time using a pressure module; measuring a first cleaning etching gas flow rate of the cleaning etching gas introduced into the cavity using a flow module; and using an analysis module to calculate a first dissociation rate of the cleaning etching gas based on the first pressure change curve, the first cleaning etching gas flow rate, a system correction value, a cleaning etching gas flow rate reference value, and a cleaning etching gas pressure reference value, wherein the cleaning etching gas pressure reference value is the pressure of the cleaning etching gas without dissociation, given the cleaning etching gas flow rate reference value.

[0009] In one embodiment, the cleaning etching gas includes a fluorine-containing gas.

[0010] In one embodiment, etching the first semiconductor film includes an etching process and an over-etching process; a first pressure change curve has a rising segment that rises from a first plateau corresponding to the etching process to a second plateau corresponding to the over-etching process; and an analysis module is used to calculate a first dissociation rate based on the pressure at the highest point of the rising segment, a first cleaning etching gas flow rate, a system correction value, a cleaning etching gas flow rate reference value, and a cleaning etching gas pressure reference value.

[0011] In one embodiment, the method further includes: introducing an inert gas into a cavity; measuring the inert gas flow rate of the inert gas introduced into the cavity using a flow module; and calculating a system correction value using an analysis module based on a first pressure change curve, the inert gas flow rate, an inert gas flow rate reference value, and an inert gas pressure reference value, wherein the inert gas pressure reference value is the pressure value of the inert gas having the inert gas flow rate reference value.

[0012] In one embodiment, the introduction of inert gas is performed before the introduction of cleaning and etching gas; and an analysis module is used to calculate system correction values ​​based on a pressure, inert gas flow rate, inert gas flow rate reference value, and inert gas pressure reference value corresponding to the introduction of cleaning and etching gas in a first pressure change curve.

[0013] In one embodiment, the method further includes the following operations: removing cleaning and etching gas from the cavity; introducing cleaning and etching gas into the cavity to etch a second semiconductor film in the cavity; measuring a second pressure change curve of the pressure in the cavity over time using a pressure module; measuring a second cleaning and etching gas flow rate of the cleaning and etching gas introduced into the cavity using a flow module; calculating a second dissociation rate of the cleaning and etching gas using an analysis module based on the second pressure change curve, the second cleaning and etching gas flow rate, a system correction value, a cleaning and etching gas flow rate reference value, and a cleaning and etching gas pressure reference value; and recording a first dissociation rate corresponding to a first monitoring time and a second dissociation rate corresponding to a second monitoring time, with the second monitoring time being after the first monitoring time, using a recording module. Attached Figure Description

[0014] When reading the accompanying drawings of this disclosure, it is recommended to understand all aspects of this disclosure from the detailed description below. It should be noted that, in accordance with industry standard practice, various feature dimensions may not be drawn to scale. Furthermore, for clarity of discussion, various feature dimensions may be enlarged or reduced. In addition, to simplify the drawings, conventional structures and components will be shown in a simplified schematic manner.

[0015] Figure 1 This is a schematic diagram of a system for monitoring the dissociation rate of cleaning etched gas according to one embodiment of this disclosure.

[0016] Figure 2 This is a partial schematic diagram of a system containing a cavity for monitoring and cleaning the dissociation rate of etching gas according to an embodiment of this disclosure.

[0017] Figure 3 This is a flowchart of a method for monitoring the dissociation rate of a cleaning etching gas system according to an embodiment of this disclosure.

[0018] Figure 4 This is a schematic diagram of the pressure change curve within the cavity according to one embodiment of this disclosure.

[0019] Figure 5 This is a schematic diagram of the dissociation rate change curve of the cleaning etching gas according to one embodiment of the present disclosure.

[0020] In the attached figures, the following labels are used:

[0021] 10: System

[0022] 20: Method

[0023] 21: Operation

[0024] 22: Operation

[0025] 23: Operation

[0026] 24: Operation

[0027] 100: Cavity

[0028] 200: Pressure Module

[0029] 300: Traffic Module

[0030] 400: Analysis Module

[0031] 101: Semiconductor film

[0032] 102: Entrance

[0033] 103: Electrode

[0034] 104: First electrode

[0035] 104A: Gas Channel

[0036] 105: Second electrode

[0037] 106: Backplate

[0038] 106A: Space

[0039] 107: Exports

[0040] 108: Fasteners

[0041] 110: Support column

[0042] A: Point

[0043] B: Point

[0044] C: Point

[0045] CEG: Cleaning Etching Gas

[0046] D: Point

[0047] E: Point

[0048] F: Point

[0049] IG: Inert gas

[0050] IRC: Dissociation Rate Change Curve

[0051] IRPC: Dissociation Rate Prediction Curve

[0052] IS: Ascending segment

[0053] HP: Highest point

[0054] P1: First Pressure

[0055] P2: Second pressure

[0056] PC: Pressure Change Curve

[0057] PF1: First Platform

[0058] PF2: Second Platform

[0059] RC: Remote cavity

[0060] RF: Radio Frequency Signal Generator

[0061] RF1: First radio frequency signal generator

[0062] RF2: Second radio frequency signal generator

[0063] T1: First Time

[0064] T2: Second Time

[0065] WP1: First Alert Level

[0066] WP2: Second Alert Level Detailed Implementation

[0067] To make the description of this disclosure more detailed and complete, the following illustrative description of the embodiments and specific implementations is provided. This is not to limit the implementation of this disclosure to the only form. The embodiments of this disclosure can be combined with and / or substituted with each other where advantageous, and other embodiments can be added without further explanation.

[0068] The terms “approximately,” “close to,” “substantially,” or “truly” used in this disclosure include the range of deviations of the stated values ​​and characteristics and those understood by one of ordinary skill in the art. For example, taking into account errors in the values ​​and characteristics, these terms may indicate values ​​within one or more standard deviations of the stated values ​​(e.g., values ​​within ±30%, ±20%, ±15%, ±10%, or ±5%), or the deviations covered by the stated characteristics in practical operation (e.g., the statement “truly parallel” may indicate practically close to parallel rather than ideally perfectly parallel). Furthermore, acceptable ranges of deviation may be selected based on the nature of the measurement or other properties, rather than applying a single range of deviation to all values ​​and characteristics.

[0069] This disclosure provides a system for monitoring the dissociation rate of a cleaning etching gas. The system includes a chamber, a pressure module, a flow module, and an analysis module. The chamber is used to introduce the cleaning etching gas to etch a semiconductor film. The pressure module measures the pressure change curve within the chamber over time. The flow module measures the flow rate of the cleaning etching gas introduced into the chamber. The analysis module calculates the dissociation rate of the cleaning etching gas based on the pressure change curve, the cleaning etching gas flow rate, a system calibration value, a cleaning etching gas flow rate reference value, and a cleaning etching gas pressure reference value, wherein the cleaning etching gas pressure reference value is the pressure of the cleaning etching gas with the cleaning etching gas flow rate reference value when it is undissociated (or substantially electrically neutral). This system effectively monitors the efficiency of the cleaning process by monitoring the dissociation rate of the cleaning etching gas, and thus allows for real-time adjustment of the cleaning process execution time, effectively avoiding the need to stop machine operation to test the cleaning process efficiency. In other words, this system effectively avoids process waste, increases process yield and efficiency, and significantly reduces process costs. The system disclosed herein will now be described in detail according to one embodiment.

[0070] Reference Figure 1 The schematic diagram is shown below. The system 10 disclosed herein includes a cavity 100, a pressure module 200, a flow module 300, and an analysis module 400. The cavity 100 is directly connected to the pressure module 200 and the flow module 300 to measure the pressure within the cavity 100 and the flow rate of the gas (e.g., the cleaning etching gas CEG and / or the inert gas IG described below) introduced into the cavity 100, respectively. The pressure (and / or pressure change curves over time) and flow rate obtained by the pressure module 200 and the flow module 300 are then analyzed by the analysis module 400 to obtain the dissociation rate of the cleaning etching gas CEG during the cleaning process within the cavity 100. The various components are described in detail below.

[0071] First, let's explain cavity 100, and refer to... Figure 2 The cavity 100 can be used to perform any feasible deposition process, such as chemical vapor deposition, physical vapor deposition, etc., and may leave deposition residues within the cavity 100 after the deposition process is completed (i.e., as disclosed herein). Figure 2The semiconductor film 101 shown is not limited in its actual position, size, shape, etc. within the cavity 100. Deposition precursors (not shown) for the deposition process can enter the cavity 100 through inlet 102. The cavity 100 is also used to introduce a cleaning etch gas CEG through inlet 102 (indicated by an arrow pointing towards the cavity in the figure) into the cavity 100 to perform an etching-related cleaning process on the semiconductor film 101 formed by the deposition process to remove deposition residues. In one embodiment, the cleaning etch gas CEG includes an ionized cleaning etch gas CEG. In one embodiment, the cavity 100 is a vacuum cavity, and the cavity 100 has a pressure less than atmospheric pressure.

[0072] Continue to refer to Figure 2 In one embodiment, system 10 further includes a radio frequency (RF) signal generator that can be directly and / or indirectly connected to cavity 100, such that the RF signal generator ionizes cleaning and etching gas (CEG) into ionized CEG by providing radio frequency. In one embodiment, the RF signal generator RF includes a first RF signal generator RF1 and a second RF signal generator RF2 to effectively increase the amount of ionized CEG. The first RF signal generator RF1 can first ionize the CEG outside cavity 100, and then the CEG ionized by the first RF signal generator RF1 can undergo another ionization process after being introduced into cavity 100 by the radio frequency provided by the second RF signal generator RF2. In one embodiment, system 10 further includes a remote cavity RC located between the first radio frequency signal generator RF1 and cavity 100 and connected to both the first radio frequency signal generator RF1 and cavity 100, such that the cleaning etching gas CEG can be ionized in the remote cavity RC by the radio frequency provided by the first radio frequency signal generator RF1 before being introduced into cavity 100. In one embodiment, the second radio frequency signal generator RF2 can also be used for plasma-related deposition processes (e.g., plasma-enhanced chemical vapor deposition). In one embodiment, the radio frequency frequencies of the first radio frequency signal generator RF1 and the second radio frequency signal generator RF2 are each independently 10MHz to 15MHz, for example, 13.56MHz.

[0073] Continuing with the description of cavity 100, and referring to... Figure 2In one embodiment, the cavity 100 includes an electrode 103 to facilitate the ionization process of the cleaning etching gas CEG (and / or deposition precursors during the deposition process). In one embodiment, the electrode 103 includes a first electrode 104 and a second electrode 105 below the first electrode 104, and a deposition film formed during the deposition process may be located on the second electrode 105 and between the first electrode 104 and the second electrode 105. In one embodiment, the first electrode 104 includes a plurality of gas channels 104A arranged adjacent to each other toward the second electrode 105, which helps to evenly disperse the cleaning etching gas CEG and / or deposition precursors during the deposition process entering from the inlet 102 in the cavity 100 as they flow through the gas channels 104A, thereby helping to improve the deposition uniformity of the deposition process and the etching uniformity of the cleaning process. That is, the first electrode 104 may also be referred to as a diffuser plate. In one embodiment, the second electrode 105 may also be heated and referred to as a heating plate to facilitate the implementation of the deposition process.

[0074] Continuing with the description of cavity 100, and referring to... Figure 2 In one embodiment, the cavity 100 further includes a back plate 106 above the first electrode 104. The back plate 106 can fix the first electrode 104, and a space 106A is provided between the back plate 106 and the first electrode 104 to facilitate the diffusion of cleaning etching gas CEG (and / or deposition precursors during the deposition process) entering from the inlet 102 into the first electrode 104 in the space 106A. In one embodiment, the cavity 100 further includes an outlet 107 for connecting to a vacuum pump (not shown) outside the cavity 100. In one embodiment, the cavity 100 further includes a fixing member 108 to fix any feasible substrate (not shown, such as a glass substrate, semiconductor board, etc.) onto the second electrode 105, and to allow the deposition film formed during the deposition process to be deposited on the substrate. In one embodiment, the cavity 100 further includes a support column 110 to support the second electrode 105, and the second electrode 105 and the substrate thereon can be moved by raising and lowering the support column 110 to facilitate the deposition process.

[0075] Next, let's explain. Figure 1The pressure module 200 includes any feasible pressure gauge (not shown) directly connected to the cavity 100 to measure pressure changes within the cavity 100 during the cleaning process. In one embodiment, the pressure gauge includes a capacitive vacuum gauge, a pressure sensor, a Paranir vacuum gauge, a Baden tube pressure gauge, a hot filament polar ion vacuum gauge, a U-tube manometer, the like, or combinations thereof. In one embodiment, the pressure module 200 further includes any feasible pressure gauge controller (not shown) to read, display, calibrate, and transmit the pressure values ​​measured by the pressure gauge. In one embodiment, the pressure module 200 further includes any feasible processor, memory, or other computing device (not shown, such as a computer) to convert the pressure values ​​into a pressure change curve over time (e.g., referring to...) based on the pressure gauge measurement time. Figure 4 The pressure module 200 can store and access pressure change curves (PCs). In one embodiment, the connection between the pressure gauge, pressure gauge controller, and / or calculator device can include any feasible wired and / or wireless connection, such as a connection based on a Universal Interface Bus, Universal Serial Bus, Recommended Standard-232, Video Graphics Array, Ethernet, Local Area Network, or similar combinations thereof. In one embodiment, the pressure module 200 further includes any feasible pressure valve (not shown), such as a throttle valve, isolation valve, gate valve, flow control valve, or similar combinations thereof, to provide pressure regulation at the component connection as needed.

[0076] Next, let's explain. Figure 1 The flow module 300 includes any feasible flow meter (not shown) directly connected to the cavity 100 to measure the flow rate of the cleaning etching gas CEG (and / or the inert gas IG described below) introduced into the cavity 100 during the cleaning process. In one embodiment, the flow meter includes a flow meter based on thermal sensing, pressure sensing, or a combination thereof. In one embodiment, the flow module 300 further includes any feasible flow meter controller (not shown) to read, display, calibrate, and transmit the flow values ​​measured by the flow meter. In one embodiment, the flow module 300 further includes any feasible computing device (not shown, such as a computer), such as a processor, memory, etc., and may share the same computing device with the pressure module 200 to access the flow values. In one embodiment, the connection between the flow meter, the flow meter controller, and / or the computing device may include any feasible wired and / or wireless connection, such as a connection based on a Universal Interface Bus, Universal Serial Bus, Recommended Standard-232, Video Graphics Array, Ethernet, Local Area Network, the like, or a combination thereof. In one embodiment, the flow module 300 further includes any feasible flow valve (not shown), such as a throttle valve, a flow control valve, the like, or a combination thereof, to provide flow regulation at the connection of the components as needed.

[0077] Next, let's explain. Figure 1The analysis module 400 is used to calculate the dissociation rate of the cleaning and etching gas (CEG) during the cleaning process based on the pressure change curve obtained by the pressure module 200, the cleaning and etching gas flow rate obtained by the flow module 300, the system correction value, the cleaning and etching gas flow rate reference value, and the cleaning and etching gas pressure reference value. In one embodiment, the analysis module 400 includes any feasible computing device (not shown, such as a computer, etc.) including a processor, memory, etc., and can share the same computing device with the pressure module 200 and / or the flow module 300 to perform the aforementioned calculations to obtain the dissociation rate, and can access the dissociation rate, etc. The system correction value is a correction value that needs to be adjusted by the analysis module 400 to account for various system and / or human errors during the cleaning process, and can be obtained by any feasible method, wherein a preferred system correction value provided in this disclosure is detailed below. The cleaning etching gas pressure reference value is a pressure value of the cleaning etching gas CEG within the cavity 100 when the cleaning etching gas CEG is introduced into the cavity 100 at a cleaning etching gas flow rate reference value, and when this cleaning etching gas CEG is not dissociated (e.g., at least 95%, at least 99%, or even 100% of the cleaning etching gas CEG is not dissociated, and ionization of the cleaning etching gas CEG is avoided, for example, by not activating the RF signal generator). Therefore, the measured pressure change curve and cleaning etching gas flow rate are compared with the undissociated cleaning etching gas pressure reference value and the cleaning etching gas flow rate reference value by the analysis module 400, and then corrected by the system calibration value to obtain the accurate dissociation rate disclosed herein. The cleaning etching gas flow rate reference value and its corresponding cleaning etching gas pressure reference value can be selected according to requirements. In one embodiment, a preferred reference value for the cleaning and etching gas flow rate is 8000 sccm to 14000 sccm, such as 8000 sccm, 9000 sccm, 10000 sccm, 11000 sccm, 12000 sccm, 13000 sccm, or 14000 sccm; a preferred reference value for the cleaning and etching gas pressure is 280 mtorr to 340 mtorr, such as 280 mtorr, 290 mtorr, 300 mtorr, 310 mtorr, 320 mtorr, 330 mtorr, or 340 mtorr; for example, when the flow rate of the cleaning and etching gas CEG introduced into the cavity 100 is 11000 sccm, the corresponding pressure of the cleaning and etching gas CEG is 310 mtorr. In one embodiment, the cleaning and etching gas flow rate may be the same as or different from the reference value for the cleaning and etching gas flow rate.In one embodiment, the analysis module 400 further includes any feasible data storage device (not shown, such as a portable hard drive, cloud database, etc.) to access system calibration values, cleaning etching gas flow rate reference values, cleaning etching gas pressure reference values, pressure change curves, cleaning etching gas flow rates, dissociation rates (and / or inert gas flow rates, inert gas flow rate reference values, and inert gas pressure reference values ​​described below), etc. In one embodiment, the connection between the calculator device and the data storage device may include any feasible wired and / or wireless connection, such as a connection based on Universal Serial Bus, Bluetooth, Ethernet, local area network, wide area network, the like, or combinations thereof.

[0078] Detailed description Figure 1 The analysis module 400. In one embodiment, the analysis module 400 is used to convert the first pressure P1, the cleaning and etching gas flow rate FCEG, the system correction value C, the cleaning and etching gas flow rate reference value FCEG,S, and the cleaning and etching gas pressure reference value PCEG,S in the pressure change curve at the first time into the dissociation rate IR, as shown in the following equations (1) and (2):

[0079]

[0080] IR=(P1-P0) / P0*100% Formula (2),

[0081] Where P0 is the system-corrected value C and the reference value F based on the known cleaning and etching gas flow rate. CEG,S and its corresponding cleaning and etching gas pressure reference value P CEG,S The comparison shows that the cleaning etching gas flow rate F CEG The pressure value that the cleaning and etching gas CEG should have when it is not dissociated is calculated. Therefore, comparing this pressure value P0 with the measured first pressure P1 yields the accurate dissociation rate IR of the cleaning and etching gas CEG. The first pressure P1 is taken from the first time point in the pressure change curve (e.g., referring to...). Figure 4 The first time (T1) refers to the time it takes for the pressure change curve to rise from the first platform to the highest point in the rising section of the second platform (e.g., referring to...). Figure 4The first platform PF1, the second platform PF2, the rising section IS, and the highest point HP are defined. Since the cleaning process is based on etching the semiconductor film 101 with cleaning etching gas CEG to remove deposited residues, the cleaning process can include an etching process before etching the semiconductor film 101 and an over-etching process after the etching process. That is, the first platform and the second platform correspond to the etching process and the over-etching process, respectively, and the first pressure accurately reflects the system state affecting the dissociation rate. In one embodiment, the first and second platforms occur after the cleaning etching gas CEG has been introduced into the cavity 100. In another embodiment, the first and second platforms occur after the radio frequency signal generator RF has been activated to ionize the cleaning etching gas CEG. In one embodiment, the first pressure P1 is the pressure value with the maximum value in the pressure change curve (not shown separately).

[0082] Provide a detailed description of the system calibration values, and refer to... Figures 1 to 2In one embodiment, a more accurate system calibration value can be obtained by introducing an inert gas IG into the cavity 100. Specifically, the cavity 100 further includes a method for introducing the inert gas IG before introducing the cleaning and etching gas CEG, wherein the inert gas IG enters the cavity 100 through inlet 102; once the inert gas IG is introduced into the cavity 100, the pressure module 200 can be used to measure the pressure change within the cavity 100 and thus obtain a pressure change curve; the flow module 300 may further include a method for measuring the inert gas flow rate of the inert gas IG introduced into the cavity 100; and the analysis module 400 may further include a method for calculating the system calibration value based on the pressure change curve, the inert gas flow rate, the inert gas flow rate reference value, and the inert gas pressure reference value. The inert gas pressure reference value is a pressure value of the inert gas IG within the cavity 100 when the inert gas IG is introduced into the cavity 100 at an inert gas flow rate reference value, and the cavity 100 does not substantially contain the cleaning and etching gas CEG (e.g., approximately before or at the time of the introduction of the cleaning and etching gas CEG). Therefore, by comparing the measured pressure change curve and inert gas flow rate with the inert gas pressure reference value and inert gas flow rate reference value through the analysis module 400, accurate system correction values ​​can be obtained for this disclosure, to accurately correct errors such as those based on the vacuum pump, pressure valve, flow valve, and human operation. The inert gas flow rate reference value and its corresponding inert gas pressure reference value can be selected according to requirements. In one embodiment, a preferred inert gas flow rate reference value is 2000 sccm to 8000 sccm, such as 2000 sccm, 3000 sccm, 4000 sccm, 5000 sccm, 6000 sccm, 7000 sccm, or 8000 sccm; a preferred inert gas pressure reference value is 131 mtorr to 191 mtorr, such as 131 mtorr, 141 mtorr, 151 mtorr, 161 mtorr, 171 mtorr, 181 mtorr, or 191 mtorr; wherein, for example, when the flow rate of inert gas IG entering the cavity 100 is 5000 sccm, the corresponding pressure of inert gas IG is 161 mtorr. In one embodiment, the inert gas flow rate may be the same as or different from the inert gas flow rate reference value. In one embodiment, in addition to introducing inert gas IG to obtain accurate system calibration values, the cavity 100 also facilitates the ionization process of the subsequently introduced cleaning and etching gas CEG, thereby improving the dissociation rate. For example, the inert gas IG can also flow through a remote cavity RC along with the cleaning and etching gas CEG, and assist in the ionization process of the cleaning and etching gas CEG in the remote cavity RC.

[0083] Continue to explain the system calibration values, and refer to... Figures 1 to 2In one embodiment, the analysis module 400 is used to analyze the second pressure P2 and the inert gas flow rate F at the second time in the pressure change curve. IG Inert gas flow rate reference value F IG,S and inert gas pressure reference value P IG,S The system correction value C, applicable to equations (1) and (2) above, is transformed into the following equation (3):

[0084]

[0085] Equation (3) combines the measured second pressure P2 and inert gas flow rate F IG Compared with the known inert gas flow rate reference value F IG,S and its corresponding inert gas pressure reference value P IG,S The comparison is performed to obtain a precise system correction value C. The second pressure P2 is taken from the second time in the pressure change curve (e.g., referring to...). Figure 4 The second time (T2) occurs approximately after the inert gas IG is introduced into the cavity 100 and approximately when the cleaning and etching gas CEG is introduced into the cavity 100, for example, substantially equal to the time when the cleaning and etching gas CEG is introduced into the cavity 100, or for example, within 1 second before the cleaning and etching gas CEG is introduced into the cavity 100, to ensure that an accurate system correction value C is obtained before the cavity 100 contains the cleaning and etching gas CEG. In one embodiment, the second time occurs before the first time described above.

[0086] In one embodiment, system 10 further includes a recording module (not shown) for repeatedly recording multiple dissociation rates obtained using analysis module 400, and recording these dissociation rates as dissociation rate change curves according to corresponding multiple repetitions (or times) (e.g., referring to...). Figure 5 The dissociation rate change curve (IRC) is obtained. That is, each time the cleaning process removes deposited residue, not only can the dissociation rate be monitored by the system 10 disclosed herein, but the dissociation rate change can also be obtained by the recording module, enabling operators to take appropriate measures regarding the efficiency of the cleaning process. In one embodiment, the recording module includes any feasible computing device (not shown, such as a computer, etc.) with a processor, memory, etc., and may share the same computing device with the pressure module 200, flow module 300, and / or analysis module 400. In one embodiment, the recording module may be connected to the data storage device of the analysis module 400 to access the dissociation rate obtained from each cleaning process execution and further obtain the dissociation rate change curve. The connection between the recording module and the data storage device of the analysis module 400 may include any feasible wired and / or wireless connection, such as a connection based on Universal Serial Bus, Bluetooth, Ethernet, local area network, wide area network, the like, or combinations thereof.

[0087] In one embodiment, system 10 further includes a prediction module (not shown) for converting the dissociation rate change curve into a dissociation rate prediction curve (e.g., referring to...). Figure 5 The prediction module can perform the above transformation according to any feasible curve fitting method, such as curve fitting methods based on exponential, Gaussian, polynomial, or similar combinations thereof. That is, before each cleaning process is executed, the dissociation rate of the current cleaning process can be predicted based on the dissociation rate change curves obtained from previous cleaning processes, allowing operators to respond appropriately to the efficiency of the cleaning process in real time. In one embodiment, the prediction module achieves a dissociation rate prediction accuracy of over 90%. In one embodiment, the prediction module includes any feasible processor, memory, or other computing device (not shown, such as a computer), and can share the same computing device with the pressure module 200, flow module 300, analysis module 400, and / or recording module. In one embodiment, the prediction module can be connected to the recording module to convert the dissociation rate change curve into a dissociation rate prediction curve, and the connection between the prediction module and the recording module can include any feasible wired and / or wireless connection, such as a connection based on Universal Serial Bus, Bluetooth, Ethernet, local area network, wide area network, or similar combinations thereof.

[0088] In one embodiment, system 10 further includes a display module (not shown) for displaying the pressure change curve obtained by pressure module 200 for performing the cleaning process, the cleaning etching gas flow rate (and / or inert gas flow rate) for performing the cleaning process obtained by flow module 300, the dissociation rate for performing the cleaning process obtained by analysis module 400, the dissociation rate change curve including the dissociation rate of the previous cleaning process obtained by recording module, and / or the dissociation rate prediction curve obtained by prediction module, etc., so that operators can take appropriate measures in real time regarding the efficiency of the cleaning process. In one embodiment, the display module further includes a notification for displaying when the dissociation rate and / or the dissociation rate change curve includes a dissociation rate below a warning value, so that operators can take appropriate measures in more real time regarding the efficiency of the cleaning process. In one embodiment, the warning value includes a first warning value and a second warning value (e.g., refer to...). Figure 5The first warning value WP1 and the second warning value WP2 are specified. In one embodiment, the first warning value is when the dissociation rate is between 65% and 75%, for example, 70%, and the second warning value is when the dissociation rate is between 60% and 70%, for example, 65%. Therefore, when the dissociation rate is lower than the first warning value, the display module can remind the operator that the cleaning process needs to be extended due to insufficient efficiency, and when the dissociation rate is lower than the second warning value, the display module can remind the operator that the base station needs to be stopped due to severely insufficient efficiency. In one embodiment, the display module includes any feasible display screen. In one embodiment, the display module includes any feasible calculator device (not shown, such as a computer) with a processor, memory, etc., and can share the same calculator device with the pressure module 200, flow module 300, analysis module 400, recording module, and / or prediction module. In one embodiment, the display module may be connected to the pressure module 200, the flow module 300, the analysis module 400, the recording module, and / or the prediction module, and this connection includes any feasible wired and / or wireless connection, such as a connection based on Universal Serial Bus, Bluetooth, Ethernet, local area network, wide area network, the like, or a combination thereof.

[0089] This disclosure also provides a method 20 for using the above-described system 10 for monitoring the dissociation rate of cleaning etched gases. Method 20 includes the following operations 21 to 24, and refers to... Figure 3 The method flowchart is as follows. Operation 21 includes introducing a cleaning and etching gas CEG into the cavity 100 to etch a first semiconductor film in the cavity 100. Operation 22 includes using a pressure module 200 to measure a first pressure change curve of the pressure in the cavity 100 over time. Operation 23 includes using a flow module 300 to measure a first cleaning and etching gas flow rate of the cleaning and etching gas CEG introduced into the cavity 100. Operation 24 includes using an analysis module 400 to calculate a first dissociation rate of the cleaning and etching gas based on the first pressure change curve, the first cleaning and etching gas flow rate, a system correction value, a cleaning and etching gas flow rate reference value, and a cleaning and etching gas pressure reference value, wherein the cleaning and etching gas pressure reference value is the pressure value of the cleaning and etching gas with the cleaning and etching gas flow rate reference value when it is not dissociated. The first semiconductor film, the first pressure change curve, the first cleaning and etching gas flow rate, and the first dissociation rate are respectively equivalent to the semiconductor film, pressure change curve, cleaning and etching gas flow rate, and dissociation rate described above, and therefore can be referred to above for details. Next, according to an embodiment and referring to Figures 1 to 2 Method 20, which details the contents of this disclosure.

[0090] In operation 21 of method 20, a cleaning etching gas CEG is introduced into chamber 100 to remove deposited residues by etching the first semiconductor film (or semiconductor film 101) in chamber 100 through the cleaning process. The flow rate of the cleaning etching gas CEG introduced into chamber 100 can be adjusted as needed, and the flow rate value is measured by flow module 300 in operation 23 and the dissociation rate is calculated by analysis module 400 in operation 24. In one embodiment, the cleaning etching gas CEG is continuously introduced into chamber 100 until the end of the cleaning process, and the flow rate of the cleaning etching gas remains substantially constant from the introduction of the cleaning etching gas CEG into chamber 100 to the end of the cleaning process. In one embodiment, the cleaning etching gas CEG includes a fluorine-containing gas, such as nitrogen trifluoride, sulfur hexafluoride, the like, or combinations thereof. In one embodiment, the first semiconductor film (or semiconductor film 101) is a silicon-containing semiconductor film, such as silicon nitride, amorphous silicon, the like, or combinations thereof. In one embodiment, the thickness of the first semiconductor film (or semiconductor film 101) may be from 2500 nm to 4500 nm, such as 2500 nm, 3000 nm, 3500 nm, 4000 nm, or 4500 nm. In one embodiment, method 20 further includes performing any feasible deposition process to form a deposition residue such as the first semiconductor film (or semiconductor film 101) before performing operation 21. In one embodiment, method 20 further includes using (or activating) a first radio frequency signal generator RF1 to ionize the etch gas CEG outside the cavity 100 before the etch gas CEG is introduced into the cavity 100. In one embodiment, method 20 further includes using (or activating) a second radio frequency signal generator RF2 to ionize the etch gas CEG inside the cavity 100 after the etch gas CEG is introduced into the cavity 100.

[0091] In operation 22 of method 20, a first pressure change curve (e.g., referring to) is measured using pressure module 200 to measure the pressure change over time within cavity 100. Figure 4 The pressure change curve (PC) is shown. Since etching the first semiconductor film includes an etching process and an over-etching process, the first pressure change curve has a rising section from the first plateau corresponding to the etching process to the second plateau corresponding to the over-etching process, as detailed above.

[0092] In operation 23 of method 20, the flow rate of the first cleaning and etching gas (CEG) introduced into the cavity 100 is measured using the flow rate module 300. In one embodiment, the flow rate of the CEG introduced into the cavity 100 is measured by the flow rate module 300 to be between 8000 sccm and 14000 sccm, for example, 8000 sccm, 9000 sccm, 10000 sccm, 11000 sccm, 12000 sccm, 13000 sccm, or 14000 sccm.

[0093] In operation 24 of method 20, analysis module 400 is used to calculate a first dissociation rate based on a first pressure change curve, a first cleaning and etching gas flow rate, a system correction value, a cleaning and etching gas flow rate reference value, and a cleaning and etching gas pressure reference value. In one embodiment, analysis module 400 specifically calculates the first dissociation rate based on the pressure at the highest point of the rising segment in the first pressure change curve (i.e., the first pressure described above), the first cleaning and etching gas flow rate, the system correction value, the cleaning and etching gas flow rate reference value, and the cleaning and etching gas pressure reference value. The first pressure obtained by pressure module 200 reflects the implementation efficiency of the cleaning process and, after correction and comparison as described in detail above, is converted into an accurate first dissociation rate, enabling operators to take appropriate measures based on the implementation efficiency of the cleaning process.

[0094] In one embodiment, method 20 further includes introducing an inert gas IG into the cavity 100 before introducing the cleaning and etching gas CEG into the cavity 100, in order to obtain the system calibration value described above and increase the number of ionizations of the cleaning and etching gas CEG. The flow rate of the inert gas IG introduced into the cavity 100 can be adjusted as needed, and method 20 may further include measuring the inert gas flow rate of the inert gas IG introduced into the cavity 100 via a flow module 300. In one embodiment, the flow rate of the inert gas IG introduced into the cavity 100, as measured by the flow module 300, is between 2000 sccm and 8000 sccm, for example, 2000 sccm, 3000 sccm, 4000 sccm, 5000 sccm, 6000 sccm, 7000 sccm, or 8000 sccm. In one embodiment, the flow rate ratio of the cleaning etching gas CEG to the inert gas IG introduced into the chamber 100 is 1 to 10, for example, 1, 2, 4, 6, 8, or 10. In one embodiment, the inert gas IG includes argon, fluorine, similar substances, or combinations thereof. Since the chamber 100 is also purged with inert gas IG, the first pressure change curve measured by the pressure module 200 may also include the pressure change due to the introduction of inert gas IG. Therefore, in the embodiment where the chamber 100 is also purged with inert gas IG, method 20 may further include using the analysis module 400 to calculate a system correction value based on the first pressure change curve, the inert gas flow rate, the inert gas flow rate reference value, and the inert gas pressure reference value. In one embodiment, the analysis module 400 specifically calculates the system correction value based on the pressure approximately corresponding to the introduction of the cleaning etching gas in the first pressure change curve (i.e., the second pressure described above), the inert gas flow rate, the inert gas flow rate reference value, and the inert gas pressure reference value. In one embodiment, the inert gas IG is introduced into the cavity 100 before the radio frequency signal generator (RF) is used (or activated) to ionize the cleaning etching gas CEG, and the inert gas IG is introduced into the cavity 100 until after the first radio frequency signal generator (RF1) is used (or activated) to ionize the cleaning etching gas CEG, after the cleaning etching gas CEG is introduced into the cavity 100, and before the second radio frequency signal generator (RF2) is used (or activated). For example, the continuous introduction of inert gas IG into the cavity 100 is stopped by closing the flow valve, so that the inert gas IG helps the cleaning etching gas CEG to ionize, but avoids the cleaning etching gas CEG having inert gas IG in the cavity 100 when etching the first semiconductor film (i.e., when the first plateau in the first pressure change curve corresponding to the etching process occurs, the cavity 100 does not substantially contain inert gas). In one embodiment, the inert gas flow rate of inert gas IG from the introduction of inert gas IG into the cavity 100 to the end of the introduction of inert gas IG into the cavity 100 remains substantially constant.

[0095] In one embodiment, method 20 further includes repeating the above operations to perform another cleaning process and / or deposition process to monitor changes in the system's dissociation rate. For example, the cleaning etch gas CEG that has undergone the above cleaning process is removed from the chamber 100. Then, the cleaning etch gas CEG is introduced into the chamber 100 again to etch a second semiconductor film in the chamber 100 that can be formed by another deposition process. Then, the pressure module 200 is used again to measure a second pressure change curve of the pressure in the chamber 100 over time, and the flow module 300 is used again to measure a second cleaning etch gas flow rate of the cleaning etch gas CEG introduced into the chamber 100. Then, the analysis module 400 is used again to calculate the second dissociation rate of the cleaning etch gas based on the second pressure change curve, the second cleaning etch gas flow rate, the system correction value, the cleaning etch gas flow rate reference value, and the cleaning etch gas pressure reference value. The descriptions of the second semiconductor film, the second pressure change curve, the second cleaning and etching gas flow rate, and the second dissociation rate are similar to those of the descriptions of the first semiconductor film, the first pressure change curve, the first cleaning and etching gas flow rate, and the first dissociation rate above, and therefore can be found in detail above. Repeated cleaning processes may further include introducing inert gas IG into cavity 100 to obtain another system calibration value. In one embodiment, method 20 further includes using the recording module of system 10 to record the first dissociation rate corresponding to the first monitoring time when performing the first cleaning process and / or deposition process, and the second dissociation rate corresponding to the second monitoring time when performing the second cleaning process and / or deposition process, thus obtaining a dissociation rate change curve. Repeating method 20 of this disclosure can also obtain the following as described above. Figure 5 The dissociation rate change curve IRC. In one embodiment, method 20 further includes using the prediction module of system 10 to convert the dissociation rate change curve into a dissociation rate prediction curve (e.g., referring to...). Figure 5 The dissociation rate prediction curve (IRPC). In one embodiment, method 20 further includes using the display module of system 10 to display pressure change curves, cleaning etching gas flow rate (and / or inert gas flow rate), dissociation rate, dissociation rate change curves and / or dissociation rate prediction curves in real time, and to receive notifications when the dissociation rate and / or dissociation rate change curves include dissociation rates below a warning value.

[0096] Next, refer to Figures 4 to 5 The detailed embodiments of system 10 and method 20 disclosed herein are described below. It should be noted that the embodiments are provided to enable those skilled in the art to better understand the present disclosure and are not intended to limit the scope of the present disclosure.

[0097] In one embodiment, a cleaning etching gas (CEG) and an inert gas (IG) are introduced into the cavity 100 to perform a cleaning process on the semiconductor film in the cavity 100. The flow rate of the cleaning etching gas (CEG), measured by the flow module 300, is 11000 sccm, and the flow rate of the inert gas (IG), measured by the flow module 300, is 5000 sccm. The pressure change curve PC, measured by the pressure module 200, is shown below. Figure 4 As shown, point A in the curve corresponds to the time and pressure of inert gas IG being introduced into cavity 100; point B corresponds to the time and pressure of using (or starting) the first radio frequency signal generator RF1; point C corresponds to the time and pressure of cleaning etching gas CEG being introduced into cavity 100 (i.e., the second time and second pressure in this embodiment, used to convert the second pressure into a system correction value, but the pressure 1 second before point C can also be used as the second pressure in this disclosure); point D corresponds to the time and pressure of stopping the introduction of inert gas IG into cavity 100; point E corresponds to the time and pressure of using (or starting) the second radio frequency signal generator RF2; the first platform PF1 corresponds to the etching process; the second platform PF2 corresponds to the over-etching process; the time and pressure of HP at the highest point of the rising segment IS between the first platform PF1 and the second platform PF2 correspond to the first time and first pressure mentioned above, used to convert the first pressure into a dissociation rate; and point F corresponds to the end of cleaning etching, such as stopping the introduction of cleaning etching gas CEG into cavity 100, turning off the radio frequency signal generator RF, etc. In this embodiment, the second pressure is 165 mtorr, and the inert gas flow rate reference value and its corresponding inert gas pressure reference value can be taken as 5000 sccm and 161 mtorr respectively, based on the data stored in the data storage device of the analysis module 400. Therefore, the system correction value of this embodiment can be calculated by the analysis module 400 as approximately 0.9758 according to the above formula (3). In this embodiment, the first pressure is 625 mtorr, and the cleaning and etching gas flow rate reference value and its corresponding cleaning and etching gas pressure reference value can be taken as 11000 sccm and 310 mtorr respectively, based on the data stored in the data storage device of the analysis module 400. Therefore, the dissociation rate of this embodiment can be calculated by the analysis module 400 as approximately 96.7% according to the above formulas (1) and (2). By repeating the cleaning process, the dissociation rate of each time can be obtained again by this system as follows. Figure 5 The dissociation rate change curve IRC and the dissociation rate prediction curve IRPC are shown.

[0098] The system and method disclosed herein can effectively, quickly, and easily monitor the efficiency of the cleaning process by monitoring the dissociation rate of the cleaning etching gas. The dissociation rate accurately reflects the impact of system status on the dissociation rate, allowing for real-time adjustment of the cleaning process execution time based on system status. For example, the dissociation rate can reflect whether components within the chamber (e.g., the first electrode, backplate, etc.) are affected by excessive aging, and whether any component in the system (e.g., the vacuum pump, pressure valve, flow valve, etc.) has significant errors affecting the dissociation rate. In other words, the system and method disclosed herein can effectively increase the yield and efficiency of the cleaning process and reduce costs, avoiding the process efficiency reduction caused by stopping machine operation to test the cleaning process efficiency, and avoiding the waste caused by inefficiently using excessive cleaning etching gas.

[0099] This disclosure describes some embodiments in considerable detail, but other embodiments may also be feasible. Therefore, the scope and spirit of the appended claims should not be limited by the description of the embodiments contained in this disclosure. Modifications and alterations to this disclosure may be made by those skilled in the art without departing from its scope and spirit. Such modifications and alterations are included in this disclosure as long as they fall within the scope and spirit of the appended claims.

Claims

1. A system for monitoring the dissociation rate of cleaning etching gases, characterized in that, include: A cavity for introducing a cleaning and etching gas to etch a semiconductor film; A pressure module is used to measure a pressure change curve of a pressure within the cavity over time. A flow module is used to measure the flow rate of the cleaning and etching gas introduced into the cavity; as well as An analysis module is used to calculate a dissociation rate of the cleaning and etching gas based on the pressure change curve, the cleaning and etching gas flow rate, a system correction value, a cleaning and etching gas flow rate reference value, and a cleaning and etching gas pressure reference value, wherein the cleaning and etching gas pressure reference value is a pressure value of the cleaning and etching gas without dissociation, having the cleaning and etching gas flow rate reference value; wherein, The chamber is further used to introduce an inert gas before the cleaning and etching gas is introduced; the flow module is further used to measure the inert gas flow rate of the inert gas introduced into the chamber; the analysis module is further used to calculate the system correction value based on the pressure change curve, the inert gas flow rate, an inert gas flow rate reference value and an inert gas pressure reference value; and the inert gas pressure reference value is a pressure value of the inert gas having the inert gas flow rate reference value; The analysis module obtains the system correction value by comparing the measured pressure change curve, the inert gas flow rate with the inert gas flow rate reference value and the inert gas pressure reference value.

2. The system as described in claim 1, characterized in that, The analysis module is used to calculate the dissociation rate based on a first pressure at a first time in the pressure change curve, the cleaning and etching gas flow rate, the system correction value, the cleaning and etching gas flow rate reference value, and the cleaning and etching gas pressure reference value, and the first time is a time at a highest point in a rising segment of the pressure change curve from a first platform to a second platform.

3. The system as described in claim 1, characterized in that, The analysis module is used to calculate the system correction value based on a second pressure at a second time in the pressure change curve, the inert gas flow rate, the inert gas flow rate reference value, and the inert gas pressure reference value, and the second time is after the inert gas is introduced into the cavity and when the cleaning and etching gas is introduced into the cavity; The system correction value is equal to the ratio of the inert gas pressure reference value to the second pressure multiplied by the ratio of the inert gas flow rate to the inert gas flow rate reference value.

4. The system as described in claim 1, characterized in that, Including: A recording module is used to record multiple dissociation rates obtained by repeatedly using the analysis module, and to record these dissociation rates into a dissociation rate change curve according to the corresponding number of repetitions; as well as A display module for displaying the dissociation rate change curve and a notification when the dissociation rate change curve includes a dissociation rate lower than a certain value.

5. A method using a system for monitoring the dissociation rate of cleaning etching gases, characterized in that, include: A cleaning etching gas is introduced into a cavity to etch a first semiconductor film in the cavity; A pressure module is used to measure a first pressure change curve of a pressure in the cavity over a time. A flow module is used to measure the flow rate of a first cleaning and etching gas introduced into the cavity; as well as An analysis module is used to calculate a first dissociation rate of the cleaning and etching gas based on the first pressure change curve, the first cleaning and etching gas flow rate, a system correction value, a cleaning and etching gas flow rate reference value, and a cleaning and etching gas pressure reference value, wherein the cleaning and etching gas pressure reference value is a pressure value of the cleaning and etching gas without dissociation, having the cleaning and etching gas flow rate reference value; wherein, Etching the first semiconductor film includes an etching process and an over-etching process; the first pressure change curve has a rising section that rises from a first plateau corresponding to the etching process to a second plateau corresponding to the over-etching process. The analysis module is used to calculate the first dissociation rate based on a pressure at a peak of the rising section, the first cleaning and etching gas flow rate, a system correction value, a cleaning and etching gas flow rate reference value, and a cleaning and etching gas pressure reference value.

6. The method as described in claim 5, characterized in that, The cleaning etching gas includes a fluorine-containing gas.

7. The method as described in claim 5, characterized in that, This further includes introducing an inert gas into the cavity before introducing the cleaning and etching gas; measuring the inert gas flow rate of the inert gas introduced into the cavity using a flow module; and calculating a system correction value using an analysis module based on the first pressure change curve, the inert gas flow rate, an inert gas flow rate reference value, and an inert gas pressure reference value, wherein the inert gas pressure reference value is a pressure value of the inert gas having the inert gas flow rate reference value; wherein, The system correction value is obtained by comparing the measured first pressure change curve, the inert gas flow rate with the inert gas flow rate reference value and the inert gas pressure reference value.

8. The method as described in claim 7, characterized in that, The inert gas is introduced before the cleaning and etching gas is introduced; and the analysis module is used to calculate a system correction value based on a pressure, an inert gas flow rate, an inert gas flow rate reference value, and an inert gas pressure reference value corresponding to the introduction of the cleaning and etching gas in the first pressure change curve. The system correction value is equal to the ratio of the inert gas pressure reference value to the pressure when the cleaning and etching gas is introduced, multiplied by the ratio of the inert gas flow rate to the inert gas flow rate reference value.

9. The method as described in claim 5, characterized in that, Including: Remove the cleaning and etching gas from the cavity; The cleaning and etching gas is introduced into the cavity to etch a second semiconductor film in the cavity; The pressure module is used to measure a second pressure change curve of a pressure in the cavity over a time period. The flow module is used to measure the flow rate of a second cleaning and etching gas introduced into the cavity; Using this analysis module, a second dissociation rate of the cleaning and etching gas is calculated based on the second pressure change curve, the second cleaning and etching gas flow rate, a system correction value, the cleaning and etching gas flow rate reference value, and the cleaning and etching gas pressure reference value; and A recording module is used to record the first dissociation rate corresponding to a first monitoring time and the second dissociation rate corresponding to a second monitoring time, and the second monitoring time is after the first monitoring time.

Images