A shield and a vapour deposition apparatus

Abstract

The application provides a shielding cover and a vapor deposition device, wherein the shielding cover is applied to the vapor deposition device, the vapor deposition device comprises a reaction chamber, the reaction chamber comprises a reaction cavity and a ceramic dome, the ceramic dome is located above the reaction cavity, a cavity cover plate is arranged between the reaction cavity and the ceramic dome, the reaction cavity and the ceramic dome are sealingly connected through the cavity cover plate, and the outer side wall of the ceramic dome is surrounded by a radio frequency coil; the shielding cover is located above the cavity cover plate, and the shielding cover covers part of the radio frequency coil. By arranging the shielding cover in the vapor deposition device, the shielding cover is located above the cavity cover plate, and the shielding cover covers part of the radio frequency coil surrounding the outer side wall of the ceramic dome, the electromagnetic intensity of the local area is weakened through local shielding, the sputtering plasma distribution uniformity is optimized, and the sputtering film thickness range is reduced.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing equipment, and more specifically, relates to a shielding cover and a vapor deposition apparatus. Background Technology

[0002] In HDP-CVD (High Density Plasma CVD) equipment, inductively coupled plasma is used to enable the plasma to interact on the wafer surface, completing processes such as deposition, sputtering, and etching. The SD Ratio is an important indicator of the gap-filling capability of the HDP-CVD process, where S stands for Sputter Rate. Currently, HDP-CVD equipment exhibits a large Sputter THK range and an off-center Sputter THK Map, severely affecting the uniformity of plasma sputtering. Attempts have been made to adjust process parameters and optimize the internal cavity structure to reduce the sputtering thickness range, but without significant effect. Summary of the Invention

[0003] Based on the technical problems existing in the prior art, the present invention provides a shielding cover and a vapor deposition equipment, aiming to solve the technical problem of a large range of sputtered film thickness in the process performance of vapor deposition equipment.

[0004] To achieve the above objectives, according to one aspect of the present invention, a shielding cover is provided for use in a vapor deposition apparatus. The vapor deposition apparatus includes a reaction chamber, which includes a reaction chamber body and a ceramic dome. The ceramic dome is located above the reaction chamber body, and a chamber cover plate is disposed between the reaction chamber body and the ceramic dome. The reaction chamber body and the ceramic dome are sealed together by the chamber cover plate, and an RF coil is surrounded on the outer wall of the ceramic dome. The shielding cover is located above the chamber cover plate, and a portion of the RF coil is covered by the shielding cover.

[0005] Optionally, the shielding cover and the cavity cover are detachably connected.

[0006] Optionally, the shielding cover is spaced apart from the RF coil.

[0007] Optionally, the shielding cover includes one or more shielding components; when there are multiple shielding components, the multiple shielding components are arranged circumferentially along the RF coil; wherein, the shielding component includes a first baffle and a second baffle, the first baffle and the second baffle are arranged in an L-shape, the first baffle is disposed on the top of the RF coil, the second baffle is disposed on the outer side of the RF coil, and the second baffle is detachably connected to the cavity cover plate.

[0008] Optionally, the second baffle is bonded to the top of the cavity cover.

[0009] Optionally, a copper foil is provided on the second baffle, and the second baffle is adhered to the top of the cavity cover plate by the copper foil.

[0010] Optionally, the first baffle and the second baffle are made of aluminum alloy.

[0011] Optionally, the first and second baffles are shaped to give the shielding a curvature arc at its central angle.

[0012] Optionally, the central angle is 60 degrees.

[0013] According to another aspect of the present invention, a vapor deposition apparatus is provided, the vapor deposition apparatus including a reaction chamber, the reaction chamber including a reaction body and a ceramic dome, the ceramic dome being located above the reaction body, a cavity cover plate being disposed between the reaction body and the ceramic dome, the reaction body and the ceramic dome being sealed and connected by the cavity cover plate, an radio frequency coil being surrounded by the outer wall of the ceramic dome, a portion of the radio frequency coil being covered by a shielding cover, the shielding cover being disposed above the cavity cover plate, the shielding cover being the shielding cover as described above.

[0014] The beneficial effects of the shielding cover provided by this invention are as follows:

[0015] By installing a shield in the vapor deposition equipment, with the shield positioned above the cavity cover and partially covering the radio frequency coils surrounding the outer wall of the ceramic dome, the electromagnetic intensity in local areas is weakened through local shielding, optimizing the uniformity of sputtered plasma distribution, thereby reducing the range of sputtered film thickness. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the assembly of the vapor deposition equipment and the shielding cover provided in an embodiment of the present invention;

[0018] Figure 2 This is a schematic diagram of the structure of the shielding cover provided in an embodiment of the present invention;

[0019] Figure 3 This is a diagram illustrating the electromagnetic wave reflection mechanism provided in an embodiment of the present invention.

[0020] Figure 4 This is a diagram illustrating the electromagnetic wave absorption mechanism provided in an embodiment of the present invention.

[0021] Figure 5This is a diagram showing the thickness distribution of the sputtered film from a vapor deposition equipment (without a shielding cover).

[0022] Figure 6 A thickness distribution diagram of sputtered film in a vapor deposition apparatus provided in an embodiment of the present invention (with an aluminum shielding cover installed);

[0023] Figure 7 This is a schematic diagram of a vapor deposition apparatus equipped with an aluminum shielding cover, provided in an embodiment of the present invention.

[0024] The details of the reference numerals used in the above figures are as follows:

[0025] 10. Reaction chamber;

[0026] 20. Ceramic dome;

[0027] 30. Cavity cover plate; 31. Mounting slot;

[0028] 40. Radio frequency coil;

[0029] 50. Shielding cover; 51. First baffle; 52. Second baffle; 53. Copper foil. Detailed Implementation

[0030] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0031] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly or indirectly on that other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to that other element. Unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0032] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0033] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0034] As described in the background section, current HDP-CVD equipment exhibits a wide range of sputtered film thickness and an off-center sputtered film thickness distribution, severely affecting the uniformity of plasma sputtering. Attempts to reduce the sputtered film thickness range by adjusting process parameters and optimizing the internal cavity structure have been made to address these issues, but without significant effect.

[0035] See Figure 1 and Figure 2 As shown, to solve the above problems, the present invention provides a shielding cover applied to a vapor deposition equipment. The vapor deposition equipment includes a reaction chamber, which includes a reaction chamber body 10 and a ceramic dome 20. Deposition, sputtering, and etching processes are completed inside the reaction chamber body 10 and the ceramic dome 20. The ceramic dome 20 is located above the reaction chamber body 10. A chamber cover plate 30 is provided between the reaction chamber body 10 and the ceramic dome 20, sealing them together. The chamber cover plate 30 connects the reaction chamber body 10 and the ceramic dome 20, forming a sealed reaction chamber. The reaction chamber can be opened and closed via the chamber cover plate 30. An RF coil 40 surrounds the outer wall of the ceramic dome 20, and the RF coil 40 converts the gas in the reaction chamber into plasma through inductive coupling. Specifically, a base (not shown in the figure) is provided inside the reaction chamber. The base can be located at the bottom of the reaction chamber to support the wafer. Process gas (e.g., inert gas) can be pre-introduced into the reaction chamber. The radio frequency coil 40 is arranged around the outer wall of the ceramic dome 20. For example, the radio frequency coil 40 is wound around the outer wall of the ceramic dome 20. The radio frequency coil 40 can be input with a preset radio frequency power by a radio frequency power supply. The radio frequency coil 40 can excite the process gas in the reaction chamber into high-density plasma. The shield 50 is located above the cavity cover plate 30, and the shield 50 covers part of the radio frequency coil 40. That is, the radio frequency coil 40 is partially shielded by the shield 50, thereby weakening the local electromagnetic field intensity, improving the plasma distribution uniformity, and optimizing the machine performance.

[0036] By applying the above-described technical solution of the present invention, by setting a shield 50 in the vapor deposition equipment, the shield 50 is positioned above the cavity cover plate 30, and the shield 50 covers a portion of the radio frequency coil 40 surrounding the outer side wall of the ceramic dome 20. This local shielding weakens the electromagnetic intensity in the local area, optimizes the uniformity of sputtered plasma distribution, and thereby reduces the range of sputtered film thickness.

[0037] In some embodiments, the shield 50 is detachably connected to the cavity cover 30, which not only facilitates the replacement and maintenance of the shield 50, but also facilitates the adjustment of the position of the shield 50 to optimize the uniformity of sputtered plasma distribution.

[0038] In some embodiments, the shielding cover 50 is spaced apart from the radio frequency coil 40. A certain gap is maintained between the shielding cover 50 and the radio frequency coil 40 to avoid interference from the shielding cover 50 to the radio frequency coil 40.

[0039] In some embodiments, the shielding cover 50 includes one or more shielding elements; when there are multiple shielding elements, the multiple shielding elements are arranged circumferentially along the RF coil 40. The shielding elements include a first baffle 51 and a second baffle 52, which are L-shaped. The first baffle 51 is disposed on the top of the RF coil 40, and the second baffle 52 is disposed on the outer side of the RF coil 40. The second baffle 52 is detachably connected to the cavity cover 30, such as... Figure 2 As shown. The working mechanism of this invention is as follows: reflection occurs at the interface between the shielding component and the shielding area, and based on the principle of electromagnetic induction, eddy currents are formed in the shielding area, thereby reducing the field strength within the shielding area to achieve shielding. Shielding of electromagnetic waves includes both reflection and absorption. For example... Figure 3 As shown, when an electromagnetic wave reaches the surface of a shield, the incident wave is reflected due to the impedance discontinuity at the air-metal interface, resulting in reflection loss. The energy that enters the shield without being reflected by the surface is attenuated by the shielding material during its forward propagation. Figure 4 As shown, when a high-frequency magnetic field wave passes through the surface of the shielding component, a high-frequency alternating current will be induced. At this time, the current will generate a reverse magnetic flux, which weakens the intensity of the incident high-frequency magnetic field, which is the so-called absorption.

[0040] Understandably, the sputtered film thickness range can be optimized by using different numbers of shielding elements or by adjusting the position and height of the shielding elements. For example, five shielding elements are arranged at intervals along the circumference of the RF coil 40, wherein the distance between two adjacent shielding elements can be the same or different.

[0041] In some embodiments, the second baffle 52 is bonded to the top of the cavity cover 30. The bonding method is simple and easy to implement. Of course, there are various ways to detach the second baffle 52 from the cavity cover 30, such as screw connection, slot connection, etc.

[0042] In some embodiments, a copper foil 53 is provided on the second baffle 52, and the second baffle 52 is adhered to the cavity cover plate 30 by the copper foil 53. Figure 1 As shown, a mounting groove 31 is provided at the bottom of the cavity cover plate 30. The ceramic dome 20 and the radio frequency coil 40 are located in the mounting groove 31. A copper foil 53 is provided on the side of the second baffle 52 opposite to the inner groove wall of the mounting groove 31. The copper foil 53 has adhesive. The copper foil 53 is pasted to the inner groove wall of the mounting groove 31 so that the shielding component is fixed to the top of the cavity cover plate 30.

[0043] In some embodiments, the first baffle 51 and the second baffle 52 are made of aluminum alloy, a paramagnetic material with high electrical conductivity. The first baffle 51 and the second baffle 52 may also be made of other non-magnetic materials.

[0044] In some embodiments, the first baffle 51 and the second baffle 52 are shaped to give the shield a curved arc at its central angle. Of course, the shield can also be other shapes.

[0045] In some embodiments, the central angle is 60 degrees. The shielding cover 50 in this embodiment includes a shielding element, which is an arc with a central angle of 60°, an arc length of 154.5 mm, and a thickness of 1 mm. It is installed at the 12 o'clock position (next to the SLV Door). The installation angle and position may vary depending on the device; the specific installation depends on the device structure. As shown in Table 1, compared to without the shielding cover 50, installing the partial shielding cover 50 reduces the Sputter THK range by 29%, and also improves the eccentricity problem of the Sputter THK Map. Typically, thickness values ​​at 49 different locations of the sputtered film are collected, summed, and averaged to obtain the Sputter THK (sputtered film thickness). The maximum and minimum values ​​among the 49 different locations of the sputtered film thickness are subtracted to obtain the Sputter THK Range.

[0046] Table 1

[0047]

[0048] See Figure 1As shown, this invention provides a vapor deposition apparatus, which includes a reaction chamber comprising a reaction body 10 and a ceramic dome 20. The ceramic dome 20 is located above the reaction body 10, and a chamber cover 30 is disposed between the reaction body 10 and the ceramic dome 20. The reaction body 10 and the ceramic dome 20 are sealed together by the chamber cover 30. An RF coil 40 is surrounded on the outer wall of the ceramic dome 20, and a portion of the RF coil 40 is covered with a shield. The shield is disposed above the chamber cover 30, and the shield is as described in any of the above embodiments. Since the vapor deposition apparatus provided in this embodiment has the same advantages as the above-described shield, it will not be described again here.

[0049] In summary, implementing the shielding cover and vapor deposition equipment provided in this embodiment has at least the following beneficial technical effects:

[0050] (1) By setting a shield 50 in the vapor deposition equipment, the shield 50 is located above the cavity cover plate 30, and the shield 50 covers part of the radio frequency coil 40 surrounding the outer wall of the ceramic dome 20. The electromagnetic intensity of the local area is weakened by local shielding, the uniformity of sputtering plasma distribution is optimized in a directional manner, and the range of sputtering film thickness is reduced.

[0051] (2) The device of the present invention is small in size, easy to install and convenient to operate.

[0052] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A shielding cover, characterized in that, The invention is applied to a vapor deposition apparatus, which includes a reaction chamber, the reaction chamber including a reaction body and a ceramic dome, the ceramic dome being located above the reaction body, a chamber cover being provided between the reaction body and the ceramic dome, the reaction body and the ceramic dome being sealed and connected by the chamber cover, and an radio frequency coil being surrounded on the outer wall of the ceramic dome. The shielding cover is located above the cavity cover plate, and the shielding cover covers part of the radio frequency coil; The shielding cover includes one or more shielding components; when there are multiple shielding components, the multiple shielding components are arranged circumferentially along the radio frequency coil; wherein, the shielding component includes a first baffle and a second baffle, the first baffle and the second baffle are arranged in an L-shape, the first baffle is disposed on the top of the radio frequency coil, the second baffle is disposed on the outer side of the radio frequency coil, and the second baffle is detachably connected to the cavity cover plate. The bottom of the cavity cover is provided with a mounting groove, the ceramic dome and the radio frequency coil are located in the mounting groove, and copper foil is provided on the side of the second baffle opposite to the inner wall of the mounting groove. The copper foil has adhesive and is pasted to the inner wall of the mounting groove.

2. The shielding cover according to claim 1, characterized in that, The shielding cover is detachably connected to the cavity cover.

3. The shielding cover according to claim 1, characterized in that, The shielding cover is spaced apart from the radio frequency coil.

4. The shielding cover according to claim 1, characterized in that, The second baffle is adhered to the top of the cavity cover plate.

5. The shielding cover according to claim 4, characterized in that, The second baffle is provided with copper foil, and the second baffle is adhered to the top of the cavity cover plate by the copper foil.

6. The shielding cover according to claim 1, characterized in that, The first baffle and the second baffle are made of aluminum alloy.

7. The shielding cover according to claim 1, characterized in that, The first baffle and the second baffle are shaped to give the shielding member a curvature arc at its central angle.

8. The shielding cover according to claim 7, characterized in that, The central angle is 60 degrees.

9. A vapor deposition apparatus, characterized in that, The vapor deposition apparatus includes a reaction chamber, which comprises a reaction body and a ceramic dome. The ceramic dome is located above the reaction body, and a chamber cover is disposed between the reaction body and the ceramic dome. The reaction body and the ceramic dome are sealed together by the chamber cover. An RF coil is surrounded on the outer wall of the ceramic dome, and a portion of the RF coil is covered with a shield. The shield is disposed above the chamber cover, and the shield is as described in any one of claims 1 to 8.

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