Metal-matrix diamond composite material, method of making same, and electronic component

Abstract

The application relates to a manufacturing method of a metal-based diamond composite material, which comprises the following steps: providing a blank of the metal-based diamond composite material; forming a first physical vapor deposition layer covering the top surface of the blank and a second physical vapor deposition layer covering the bottom surface of the blank through physical vapor deposition and performing heat treatment; forming a first electroplated layer on the surface of the first physical vapor deposition layer away from the blank side through electroplating and forming a second electroplated layer on the surface of the second physical vapor deposition layer away from the blank side through electroplating, and the first electroplated layer and the second electroplated layer cover the first physical vapor deposition layer and the second physical vapor deposition layer respectively. The metal-based diamond composite material manufactured by the above method is easier to be processed subsequently, is easy to be ground, has better roughness control, has good durability and stability, and has higher product stability of an electronic component obtained after being welded with a chip.

Description

Technical Field

[0001] This application relates to the field of materials processing technology, and in particular to a metal-based diamond composite material, its manufacturing method, and electronic components. Background Technology

[0002] Metal-based diamond composites are composite materials prepared by adding diamond particles to a metal matrix. Common metal materials such as copper and aluminum have good thermal conductivity but high coefficients of thermal expansion. Thermal stress caused by temperature changes can induce brittle cracks in electronic components, reducing the overall reliability of the components. Diamond, on the other hand, has the advantages of good thermal conductivity and low coefficient of thermal expansion. Combining diamond with metal can effectively combine the advantages of both materials and is currently a research hotspot in heat dissipation materials.

[0003] However, the high hardness, high strength, and high wear resistance of diamond make it difficult to process metal-diamond composite materials. The grinding process is difficult and complex, with low production efficiency. Furthermore, the surface roughness of the ground material is high, which can easily lead to poor welding when it is soldered to chips, affecting the product stability of electronic components. Summary of the Invention

[0004] Therefore, it is necessary to provide a metal-based diamond composite material that is easier to process and has a smaller surface roughness, as well as a method for its fabrication.

[0005] Furthermore, it is necessary to provide an electronic component that is more conducive to improving product stability.

[0006] One embodiment of this application provides a method for manufacturing a metal-based diamond composite material, comprising the following steps:

[0007] Provide blanks for metal-based diamond composite materials;

[0008] A first physical vapor deposition layer covering the top surface of the billet and a second physical vapor deposition layer covering the bottom surface of the billet are formed by physical vapor deposition, and then heat treatment is performed.

[0009] A first electroplated layer is formed on the surface of the first physical vapor deposition layer away from the billet by electroplating, and a second electroplated layer is formed on the surface of the second physical vapor deposition layer away from the billet by electroplating, wherein the first electroplated layer and the second electroplated layer respectively cover the first physical vapor deposition layer and the second physical vapor deposition layer.

[0010] The first physical vapor deposition layer and the second physical vapor deposition layer each have one or more layers independently, and the materials of the first physical vapor deposition layer and the second physical vapor deposition layer that are adjacent to the blank include at least one element selected from chromium and boron.

[0011] The first electroplated layer and the second electroplated layer each have one or more layers independently, and the materials of the first electroplated layer adjacent to the first physical vapor deposition layer and the second electroplated layer adjacent to the second physical vapor deposition layer are selected from pure copper.

[0012] In one embodiment, the material of the first physical vapor deposition layer and / or the second physical vapor deposition layer further includes copper.

[0013] In one embodiment, the process of forming a first physical vapor deposition layer covering the top surface of the preform and a second physical vapor deposition layer covering the bottom surface of the preform by physical vapor deposition satisfies one or more of the following conditions (1) to (5):

[0014] (1) The physical vapor deposition time is 10 minutes to 50 minutes;

[0015] (2) The pressure for physical vapor deposition is 30 MPa to 50 MPa;

[0016] (3) The power of physical vapor deposition is 100W to 300W;

[0017] (4) The total thickness of the first physical vapor deposition layer is 0.1 μm to 0.5 μm;

[0018] (5) The total thickness of the second physical vapor deposition layer is 0.1 μm to 0.5 μm.

[0019] In one embodiment, the heat treatment satisfies one or more of the following conditions (1) to (3):

[0020] (1) The heat treatment temperature is 500℃~800℃;

[0021] (2) The heat treatment time is 1 to 2 hours;

[0022] (3) The vacuum degree of heat treatment is <1 Pa.

[0023] In one embodiment, the first electroplated layer satisfies one or more of the following conditions (1) to (3):

[0024] (1) The first electroplating layer has one layer, and the material of the first electroplating layer is selected from pure copper;

[0025] (2) The first electroplating layer has multiple layers. The material of the first electroplating layer adjacent to the first physical vapor deposition layer is selected from pure copper, and the material of the other first electroplating layers is selected from pure copper or pure nickel.

[0026] (3) The total thickness of the first electroplated layer is 0.3mm to 3mm.

[0027] In one embodiment, the second electroplated layer satisfies one or more of the following conditions (1) to (3):

[0028] (1) The second electroplating layer has one layer, and the material of the second electroplating layer is selected from pure copper;

[0029] (2) The second electroplating layer has multiple layers. The material of the second electroplating layer adjacent to the second physical vapor deposition layer is selected from pure copper, and the material of the other second electroplating layers is selected from pure copper or pure nickel.

[0030] (3) The total thickness of the second electroplated layer is 0.3mm to 3mm.

[0031] In one embodiment, before forming the first physical vapor deposition layer and the second physical vapor deposition layer, or

[0032] After forming the first physical vapor deposition layer and the second physical vapor deposition layer and performing heat treatment, and before forming the first electroplated layer and the second electroplated layer, the following steps are also included:

[0033] A hot-pressed layer is formed around the blank by hot pressing, and the hot-pressed layer at least covers the side surface of the blank.

[0034] Optionally, the hot-pressed layer only covers the side surface of the blank, and the material of the hot-pressed layer is selected from pure copper, copper-chromium alloy or copper-boron alloy;

[0035] Optionally, the hot-pressed layer also covers at least one of the top and bottom surfaces of the blank, and the step of forming the hot-pressed layer is prior to the formation of the first physical vapor deposition layer and the second physical vapor deposition layer. The material of the hot-pressed layer is selected from copper-chromium alloy or copper-boron alloy.

[0036] Optionally, the hot-pressed layer also covers at least one of the top and bottom surfaces of the blank, and the step of forming the hot-pressed layer is after forming the first physical vapor deposition layer and the second physical vapor deposition layer and heat treatment, and the material of the hot-pressed layer is selected from pure copper, copper-chromium alloy or copper-boron alloy.

[0037] Alternatively, the chromium content in the copper-chromium alloy is 0.1% to 2% by mass;

[0038] Alternatively, the boron content in the copper-boron alloy is 0.1% to 2% by mass;

[0039] Optionally, the thickness of the hot-pressed layer is 1 mm to 3 mm;

[0040] Optionally, the hot pressing temperature is 850℃~1020℃;

[0041] Optionally, the hot pressing pressure is 30 MPa to 50 MPa.

[0042] In one embodiment, the blank is obtained through the following steps:

[0043] It is prepared by melt infiltration method using diamond powder and oxygen-free metal as raw materials;

[0044] Optionally, the diamond powder has a particle size of 40 mesh to 350 mesh;

[0045] Optionally, the oxygen-free metal includes oxygen-free copper or oxygen-free aluminum;

[0046] Optionally, the temperature during the preparation of the green body by melt infiltration is 1085℃~1300℃.

[0047] In one embodiment, after forming the first electroplated layer and the second electroplated layer, the step of polishing the surfaces of the first electroplated layer and the second electroplated layer may be included.

[0048] Optionally, the surface roughness of the first electroplated layer and the second electroplated layer after grinding is less than 0.8.

[0049] One embodiment of this application also provides a metal-based diamond composite material, which is manufactured by the method for manufacturing metal-based diamond composite materials as described in any of the above embodiments.

[0050] The above method first deposits a first physical vapor deposition layer and a second physical vapor deposition layer on the top and bottom surfaces of the metal-based diamond composite material blank, and then performs heat treatment. The materials of the first and second physical vapor deposition layers include at least one element selected from chromium and boron. Chromium, boron and other elements can form carbides with diamond, thereby forming a relatively stable carbide layer on the surface of the blank, which can enhance the stability of the material and the bonding strength between the blank and the first and second physical vapor deposition layers. Furthermore, a first electroplating layer and a second electroplating layer are electroplated on the surfaces of the first and second physical vapor deposition layers away from the blank. The first and second electroplating layers can shield the chromium, boron and other metals in the first and second physical vapor deposition layers, so as to avoid the welding effect being affected by other elements on the surface of the material in the subsequent welding process. The metal-based diamond composite material produced by the above method is easier to process and grind, has better control over surface roughness and lower roughness. The metal-based diamond composite material has strong bonding force, good durability and stability, and can have higher flatness. The electronic components obtained after being welded to the chip have higher product stability. Attached Figure Description

[0051] Figure 1 This is a schematic diagram of the structure of a metal-based diamond composite material according to an embodiment of this application;

[0052] Figure 2 The image shows a cross-section of the metal-based diamond composite material obtained in Example 1.

[0053] Figure 3 To be Figure 2 The image obtained by magnifying a portion of the SEM scan image.

[0054] Explanation of reference numerals in the attached figures:

[0055] 1: Metal-based diamond composite material; 10: Blank; 110: Top surface of blank; 120: Bottom surface of blank; 130: Side surface of blank; 20: First physical vapor deposition layer; 30: Second physical vapor deposition layer; 40: First electroplating layer; 50: Second electroplating layer; 60: Hot-pressed layer. Detailed Implementation

[0056] To facilitate understanding of this application, a more comprehensive description of the application is provided below with reference to embodiments and accompanying drawings. This application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0057] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application's specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items.

[0058] In this application, the technical features described in an open-ended manner include both closed-ended technical solutions comprised of the listed features and open-ended technical solutions that include the listed features. Unless otherwise shown or indicated in the operational embodiments, all figures used to represent the quantities, physicochemical properties, etc., of ingredients in the specification and claims are to be understood to be adjusted by the term "about" in all cases. For example, therefore, unless stated to the contrary, the numerical parameters listed in the foregoing specification and appended claims are approximations, and those skilled in the art can appropriately modify these approximations to obtain the desired characteristics by utilizing the teachings disclosed herein. The use of numerical ranges indicated by endpoints includes all numbers within that range and any range within that range; for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4, and 5, etc.

[0059] The weights of the relevant components mentioned in the embodiments of this invention can refer not only to the specific content of each component, but also to the proportional relationship between the weights of the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this invention is within the scope disclosed in the embodiments of this invention. Specifically, the weights mentioned in the embodiments of this invention can be well-known units of mass in the chemical industry, such as μg, mg, g, and kg.

[0060] One embodiment of this application provides a method for manufacturing a metal-based diamond composite material 1, including the following steps S1, S3 and S4.

[0061] Step S1: Provide a blank 10 of the metal-based diamond composite material 1.

[0062] Step S3: A first physical vapor deposition layer 20 covering the top surface 110 of the blank 10 and a second physical vapor deposition layer 30 covering the bottom surface 120 of the blank 10 are formed by physical vapor deposition, and then heat treatment is performed.

[0063] The first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 each have one or more independent layers, and the materials of the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 adjacent to the preform 10 include at least one element selected from chromium and boron.

[0064] Step S4: A first electroplated layer 40 is formed on the surface of the first physical vapor deposition layer 20 away from the blank 10 by electroplating, and a second electroplated layer 50 is formed on the surface of the second physical vapor deposition layer 30 away from the blank 10 by electroplating. The first electroplated layer 40 and the second electroplated layer 50 respectively cover the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30.

[0065] The first electroplated layer 40 and the second electroplated layer 50 each have one or more layers independently, and the materials of the first electroplated layer 40 adjacent to the first physical vapor deposition layer 20 and the second electroplated layer 50 adjacent to the second physical vapor deposition layer 20 are selected from pure copper.

[0066] The above method first deposits a first physical vapor deposition layer 20 and a second physical vapor deposition layer 30 on the top surface 110 and bottom surface 120 of the blank 10 of the metal-based diamond composite material 1, and then performs heat treatment. The materials of the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 include at least one element selected from chromium and boron. Chromium, boron and other elements can form carbides with diamond, thereby forming a relatively stable carbide layer on the surface of the blank 10, which can enhance the stability of the material and the bonding between the blank 10 and the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30. To further enhance the bonding strength of the physical vapor deposition layer 30, a first electroplated layer 40 and a second electroplated layer 50 are electroplated on the surfaces of the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 away from the blank 10. These electroplated layers 40 and 50 can shield metals such as chromium and boron in the first and second physical vapor deposition layers 20 and 30, preventing the welding effect from being affected by other elements on the surface of the material during subsequent welding processes. The metal-based diamond composite material 1 prepared by the above method is easier to process, easier to grind, and has better surface roughness control. The metal-based diamond composite material 1 has strong bonding strength, good durability and stability, and can achieve higher flatness. The resulting electronic components after welding with chips exhibit higher product stability.

[0067] The following is a detailed description of the manufacturing method of the metal-based diamond composite material 1:

[0068] Step S1: Provide a blank 10 of the metal-based diamond composite material 1.

[0069] In one embodiment, the blank 10 is obtained through the following steps:

[0070] It is prepared by melt infiltration using diamond powder and oxygen-free metal as raw materials.

[0071] Furthermore, the steps for preparing the preform 10 of the metal-based diamond composite material 1 by melt infiltration include:

[0072] Diamond powder is made into a preform, which is then placed in a mold and placed in a melting furnace. Oxygen-free copper is infiltrated into the preform, and the mixture is melt-infiltrated to form a preform 10 of the metal-diamond composite material 1.

[0073] Optionally, the particle size of the diamond powder is 40 mesh to 350 mesh. Understandably, the particle size of the diamond powder may be, for example, but not limited to, 40 mesh, 60 mesh, 70 mesh, 100 mesh, 130 mesh, 150 mesh, 170 mesh, 200 mesh, 230 mesh, 250 mesh, 280 mesh, 300 mesh, 320 mesh, 350 mesh, etc.

[0074] Optionally, the oxygen-free metal includes oxygen-free copper or oxygen-free aluminum. Understandably, when the oxygen-free metal is oxygen-free copper, the resulting material is a diamond-copper composite preform 10. Understandably, when the oxygen-free metal is oxygen-free aluminum, the resulting material is a diamond-aluminum composite preform 10.

[0075] Optionally, the temperature during the preparation of the green body by melt infiltration is 1085℃~1300℃. Understandably, the temperature may be, for example, but not limited to, 1085℃, 1100℃, 1120℃, 1150℃, 1180℃, 1200℃, 1230℃, 1260℃, 1300℃, etc.

[0076] Step S3: A first physical vapor deposition layer 20 covering the top surface 110 of the blank 10 and a second physical vapor deposition layer 30 covering the bottom surface 120 of the blank 10 are formed by physical vapor deposition, and then heat treatment is performed.

[0077] The first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 each have one or more independent layers, and the materials of the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 that are adjacent to the blank include at least one element selected from chromium and boron.

[0078] Elements such as chromium and boron facilitate the formation of relatively stable carbide and alloy layers on the bonding surface with the blank 10, which enhances the stability and bonding strength of the material while reducing the overall coefficient of thermal expansion. Furthermore, physical vapor deposition (PVD) is easier to operate and control, allowing for thinner coatings and preventing excessive thickness from affecting the performance of the metal-based diamond material itself. Even further, heat treatment is performed after forming the first PVD layer 20 and the second PVD layer 30. Heat treatment promotes the bonding between the PVD material and the blank 10 of the metal-based diamond composite material 1, forming compounds such as carbides or alloys. This enhances the bonding force between the blank 10 and the first and second PVD layers 20, improving the material's durability and stability.

[0079] In one embodiment, the materials of the first physical vapor deposition layer 20 and / or the second physical vapor deposition layer 30 further include copper. Copper can improve the electrical and thermal conductivity of the material, and at the same time, it helps to improve the adhesion between the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 and the preform 10.

[0080] The following explanation uses the first physical vapor deposition layer 20 as an example:

[0081] Understandably, the first physical vapor deposition layer 20 may have one or more layers, and each layer may be independently referred to as the first physical vapor deposition layer 20.

[0082] Understandably, for example, if there is one first physical vapor deposition layer 20, the material of the first physical vapor deposition layer 20 includes at least one element selected from chromium and boron. Understandably, the material of the first physical vapor deposition layer 20 may also include copper. Understandably, the material of the first physical vapor deposition layer 20 may include, for example, but not limited to, elemental chromium, elemental boron, copper-chromium alloy, copper-boron alloy, or copper-chromium-boron alloy.

[0083] Understandably, for example, the first physical vapor deposition layer 20 has two layers. The distances between each first physical vapor deposition layer 20 and the preform 10, from closest to farthest, are successively referred to as the first first physical vapor deposition layer and the second first physical vapor deposition layer. The material of the first first physical vapor deposition layer must include at least one element selected from chromium and boron. The second first physical vapor deposition layer may or may not include at least one element selected from chromium and boron. Preferably, the second first physical vapor deposition layer includes copper but does not include chromium or boron.

[0084] Understandably, for example, the first physical vapor deposition layer 20 has three layers. The layers of the first physical vapor deposition layer 20, from closest to farthest from the preform 10, are named sequentially as the first physical vapor deposition layer, the second physical vapor deposition layer, and the third physical vapor deposition layer. The material of the first physical vapor deposition layer must include at least one element selected from chromium and boron. The second physical vapor deposition layer may include at least one element selected from chromium and boron, or it may not include at least one element selected from chromium and boron. The third physical vapor deposition layer may include at least one element selected from chromium and boron, or it may not include at least one element selected from chromium and boron. Preferably, the second physical vapor deposition layer includes copper but does not include chromium or boron; the third physical vapor deposition layer includes copper but does not include chromium or boron.

[0085] Understandably, when the first physical vapor deposition layer 20 has four or more layers, it is similar to the case of having two or three layers mentioned above, and will not be repeated here.

[0086] Understandably, the first physical vapor deposition 20, whether it has one layer or multiple layers, can be formed simultaneously through instrument settings, without having to deposit layer by layer multiple times.

[0087] Understandably, the second physical vapor deposition layer 30 is similar to the first physical vapor deposition layer 20, and will not be described in detail here.

[0088] In one embodiment, the physical vapor deposition time is 10 to 50 minutes. Understandably, the physical vapor deposition time can be, for example, but not limited to, 30 minutes, 35 minutes, 40 minutes, 45 minutes, 50 minutes, etc.

[0089] In one embodiment, the physical vapor deposition pressure is 30 MPa to 50 MPa. It is understood that the physical vapor deposition pressure may be, for example, but not limited to, 30 MPa, 35 MPa, 40 MPa, 45 MPa, 50 MPa, etc.

[0090] In one embodiment, the power of physical vapor deposition is 100W to 300W. It is understood that the power of physical vapor deposition may be, for example, but not limited to, 100W, 150W, 200W, 250W, 300W, etc.

[0091] In one embodiment, the total thickness of the first physical vapor deposition layer 20 is 0.1 μm to 0.5 μm. It is understood that the total thickness of the first physical vapor deposition layer 20 may be, for example, but not limited to, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, etc. It is also understood that when there are multiple layers of the first physical vapor deposition layer 20, the thickness of each layer may be the same or different.

[0092] In one embodiment, the total thickness of the second physical vapor deposition layer 20 is 0.1 μm to 0.5 μm. It is understood that the total thickness of the second physical vapor deposition layer 20 may be, for example, but not limited to, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, etc. It is also understood that when there are multiple layers of the second physical vapor deposition layer 20, the thickness of each layer may be the same or different.

[0093] In one embodiment, the heat treatment temperature is 500°C to 800°C. It is understood that the heat treatment temperature may be, for example, but not limited to, 500°C, 550°C, 600°C, 650°C, 700°C, 750°C, 800°C, etc.

[0094] In one embodiment, the heat treatment time is 1 to 2 hours. It is understood that the heat treatment time may be, for example, but not limited to, 1 hour, 1.2 hours, 1.5 hours, 1.8 hours, 2 hours, etc.

[0095] In one embodiment, the vacuum degree of the heat treatment is <1 Pa.

[0096] Step S4: A first electroplated layer 40 is formed on the surface of the first physical vapor deposition layer 20 away from the blank 10 by electroplating, and a second electroplated layer 50 is formed on the surface of the second physical vapor deposition layer 30 away from the blank 10 by electroplating. The first electroplated layer 40 and the second electroplated layer 50 respectively cover the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30.

[0097] The first electroplated layer 40 and the second electroplated layer 50 are each independently one or more layers, and the materials of the first electroplated layer 40, which is adjacent to the first physical vapor deposition layer 20, and the second electroplated layer 50, which is adjacent to the second physical vapor deposition layer 30, are selected from pure copper.

[0098] The first electroplating layer 40 and the second electroplating layer 50 can shield elements such as chromium and boron in the physical vapor deposition material, so that the outer surface of the composite material is still the most common materials such as copper in conventional processes. In subsequent processing, only conventional processes are needed to achieve good processing results. The presence of other elements in the material will not cause poor processing, thus reducing the overall processing difficulty of electronic components.

[0099] Understandably, the first electroplating layer 40 has one or more layers, and each layer can be independently referred to as the first electroplating layer 40.

[0100] In one embodiment, the first electroplating layer 40 has one layer, and the material of the first electroplating layer 40 is selected from pure copper.

[0101] In one embodiment, the first electroplated layer 40 has multiple layers. The material of the first electroplated layer 40 adjacent to the first physical vapor deposition layer 20 is selected from pure copper, and the material of the other first electroplated layers 40 is selected from pure copper or pure nickel.

[0102] Understandably, the first electroplated layer 40 may have, for example, two layers. In this case, the distance between the first electroplated layer 40 and the first physical vapor deposition layer 20, from closest to farthest, is the first electroplated layer of the first layer and the first electroplated layer of the second layer. The material of the first electroplated layer of the first layer is selected from pure copper, and the material of the first electroplated layer of the second layer is selected from pure copper or pure nickel. Preferably, the material of the first electroplated layer of the first layer is selected from pure copper, and the material of the first electroplated layer of the second layer is selected from pure nickel.

[0103] Understandably, the first electroplated layer 40 may have, for example, three layers. In this case, the distances between the first electroplated layer 40 and the first physical vapor deposition layer 20, from closest to farthest, are the first electroplated layer, the second electroplated layer, and the third electroplated layer. The material of the first electroplated layer is selected from pure copper, and the materials of the first electroplated layers of the second and third layers are each independently selected from pure copper or pure nickel. Preferably, the material of the first electroplated layer is selected from pure copper, the material of the first electroplated layer of the second layer is selected from pure copper, and the material of the first electroplated layer of the third layer is selected from pure nickel.

[0104] In one embodiment, the total thickness of the first electroplated layer 40 is 0.3 mm to 3 mm. It is understood that the total thickness of the first electroplated layer can be, for example, 0.3 mm, 0.5 mm, 0.8 mm, 1 mm, 1.3 mm, 1.5 mm, 1.8 mm, 2 mm, 2.3 mm, 2.5 mm, 2.8 mm, 3 mm, etc. It is also understood that when there are multiple layers of the first electroplated layer 40, the thickness of each layer of the first electroplated layer 40 can be the same or different.

[0105] Understandably, the second electroplating layer 50 may have one or more layers, and each layer may be independently referred to as the second electroplating layer 50.

[0106] In one embodiment, the second electroplating layer 50 has one layer, and the material of the second electroplating layer 50 is selected from pure copper.

[0107] In one embodiment, the second electroplated layer 50 has multiple layers, and the material of the second electroplated layer 50 adjacent to the second physical vapor deposition layer 30 is selected from pure copper, while the materials of the other second electroplated layers 50 are selected from pure copper or pure nickel.

[0108] The situation when the second electroplating layer 50 has multiple layers is similar to the situation when the first electroplating layer 40 has multiple layers, and will not be described again here.

[0109] In one embodiment, the total thickness of the second electroplated layer 50 is 0.3 mm to 3 mm. It is understood that the total thickness of the second electroplated layer 50 can be, for example, 0.3 mm, 0.5 mm, 0.8 mm, 1 mm, 1.3 mm, 1.5 mm, 1.8 mm, 2 mm, 2.3 mm, 2.5 mm, 2.8 mm, 3 mm, etc. It is also understood that when there are multiple layers of the second electroplated layer 50, the thickness of each layer can be the same or different.

[0110] In one embodiment, before forming the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30, or after forming the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 and heat treatment, and before forming the first electroplating layer 40 and the second electroplating layer 50, the step S2 is further included.

[0111] Step S2: A hot-pressed layer 60 is formed around the blank 10 by hot pressing, and the hot-pressed layer 60 covers at least the side surface 130 of the blank 10.

[0112] Optionally, the hot-pressed layer 60 covers only the side 130 of the blank 10, and the material of the hot-pressed layer 60 is selected from pure copper, copper-chromium alloy or copper-boron alloy.

[0113] Optionally, the hot-pressed layer 60 also covers at least one of the top surface 110 and the bottom surface 120 of the blank 10, and the step of forming the hot-pressed layer 60 is before the formation of the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30. The material of the hot-pressed layer 60 is selected from copper-chromium alloy or copper-boron alloy.

[0114] Optionally, the hot-pressed layer 60 also covers at least one of the top surface 110 and the bottom surface 120 of the blank 10, and the step of forming the hot-pressed layer 60 is after the formation of the first physical vapor deposition layer 20 and the second physical vapor deposition layer 30 and heat treatment. The material of the hot-pressed layer 60 is selected from pure copper, copper-chromium alloy or copper-boron alloy.

[0115] Forming a hot-pressed layer 60 around the blank 10 can better solve the problem of material size control, giving the material good cutting and processing characteristics. Moreover, the material of the hot-pressed layer 60 is selected from pure copper, copper-chromium alloy or copper-boron alloy, and will not introduce new impurities that would reduce the thermal conductivity of the material.

[0116] Optionally, the mass content of chromium in the copper-chromium alloy is 0.1% to 2%. Understandably, the mass content of chromium in the copper-chromium alloy may be, for example, but not limited to, 0.1%, 0.3%, 0.4%, 0.6%, 0.7%, 1%, 1.3%, 1.5%, 1.8%, 2%, etc.

[0117] Optionally, the boron content in the copper-boron alloy is 0.1% to 2% by mass. Understandably, the boron content in the copper-boron alloy may be, for example, but not limited to, 0.1%, 0.3%, 0.4%, 0.6%, 0.7%, 1%, 1.3%, 1.5%, 1.8%, 2%, etc.

[0118] Optionally, the thickness of the hot-pressed layer 60 is 1 mm to 3 mm. Understandably, the thickness of the hot-pressed layer 60 can be, for example, but not limited to, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, etc.

[0119] Optionally, the hot pressing temperature is 850℃~1020℃. Understandably, the hot pressing temperature may be, for example, but not limited to, 850℃, 900℃, 950℃, 1000℃, 1020℃, etc.

[0120] Optionally, the hot pressing pressure is 30 MPa to 50 MPa. Understandably, the hot pressing pressure can be, for example, but not limited to, 30 MPa, 35 MPa, 40 MPa, 45 MPa, 50 MPa, etc.

[0121] In one embodiment, after forming the first electroplated layer 40 and the second electroplated layer 50, the step of grinding the surfaces of the first electroplated layer 40 and the second electroplated layer 50 may be included.

[0122] Optionally, the surface roughness of the first electroplated layer 40 and the second electroplated layer 50 after grinding is less than 0.8.

[0123] An embodiment of this application also provides a metal-based diamond composite material 1, which is manufactured by the manufacturing method of the metal-based diamond composite material 1 as described in any of the above embodiments.

[0124] An embodiment of this application also provides an electronic component, including a chip and a metal-based diamond composite material 1 as described in any of the above embodiments.

[0125] The following detailed description, in conjunction with specific embodiments and comparative examples, further illustrates the metal-based diamond composite material, its manufacturing method, and electronic components of this application. It is understood that the following embodiments are specific, and other embodiments are not limited thereto.

[0126] Example 1

[0127] Step 1: Preparation of the preform for the metal-based diamond composite material

[0128] Diamond powder with a particle size of 100 mesh is made into a preform. The preform is placed in a mold and then placed in a melting furnace. Oxygen-free copper is infiltrated into the preform. The preform is then melt-infiltrated and formed at 1150℃ to obtain a metal-coated diamond composite material preform.

[0129] Step 2: Formation of a physical vapor deposition layer

[0130] A first physical vapor deposition layer covering the top surface of the billet and a second physical vapor deposition layer covering the bottom surface of the billet are formed by physical vapor deposition, and then heat treatment is performed.

[0131] The material of the first physical vapor deposition layer includes chromium; the material of the second physical vapor deposition layer includes chromium; the physical vapor deposition time is 30 minutes; the physical vapor deposition pressure is 50 MPa; the physical vapor deposition power is 300 W; the total thickness of the first physical vapor deposition layer is 0.1 μm; the total thickness of the second physical vapor deposition layer is 0.1 μm; both the first and second physical vapor deposition layers are single layers.

[0132] The heat treatment temperature is 500℃; the heat treatment time is 2 hours; the vacuum degree of the heat treatment is <1Pa.

[0133] Step 3: Forming the electroplated layer

[0134] A first electroplating layer is formed on the surface of the first physical vapor deposition layer away from the blank by electroplating, and a second electroplating layer is formed on the surface of the second physical vapor deposition layer away from the blank by electroplating. The first electroplating layer and the second electroplating layer respectively cover the first physical vapor deposition layer and the second physical vapor deposition layer.

[0135] The first electroplating layer consists of two layers: first, pure copper is electroplated to form a copper layer with a thickness of 0.3 mm, and then pure nickel is electroplated to form a nickel layer with a thickness of 0.01 mm.

[0136] The second electroplating layer consists of two layers: first, pure copper is electroplated to form a copper layer with a thickness of 0.3 mm, and then pure nickel is electroplated to form a nickel layer with a thickness of 0.01 mm.

[0137] Example 2

[0138] Step 1: Preparation of the preform for the metal-based diamond composite material

[0139] Diamond powder with a particle size of 100 mesh is made into a preform. The preform is placed in a mold and then placed in a melting furnace. Oxygen-free copper is infiltrated into the preform. The preform is then melt-infiltrated and formed at 1150℃ to obtain a metal-coated diamond composite material preform.

[0140] Step 2: Forming the hot-pressed layer

[0141] A hot-pressed layer is formed around the billet by hot pressing, and the hot-pressed layer covers the side of the billet.

[0142] The hot-pressed layer is made of pure copper; the thickness of the hot-pressed layer is 1 mm; the hot-pressing temperature is 950°C; and the hot-pressing pressure is 40 MPa.

[0143] Step 3: Formation of physical vapor deposition layer

[0144] A first physical vapor deposition layer covering the top surface of the billet and a second physical vapor deposition layer covering the bottom surface of the billet are formed by physical vapor deposition, and then heat treatment is performed.

[0145] The materials of the first physical vapor deposition layer include chromium and copper; the materials of the second physical vapor deposition layer include chromium and copper; the physical vapor deposition time is 50 minutes; the physical vapor deposition pressure is 30 MPa; the physical vapor deposition power is 200 W; the total thickness of the first physical vapor deposition layer is 0.5 μm; the total thickness of the second physical vapor deposition layer is 0.5 μm; both the first and second physical vapor deposition layers are single layers.

[0146] The heat treatment temperature is 800℃; the heat treatment time is 1 hour; the vacuum degree of the heat treatment is <1Pa.

[0147] Step 3: Forming the electroplated layer

[0148] A first electroplating layer is formed on the surface of the first physical vapor deposition layer away from the blank by electroplating, and a second electroplating layer is formed on the surface of the second physical vapor deposition layer away from the blank by electroplating. The first electroplating layer and the second electroplating layer respectively cover the first physical vapor deposition layer and the second physical vapor deposition layer.

[0149] The first electroplating layer has two layers: first, pure copper is electroplated to form a copper layer with a thickness of 2.5 mm, and then pure nickel is electroplated to form a nickel layer with a thickness of 0.05 mm.

[0150] The second electroplating layer consists of two layers: first, pure copper is electroplated to form a copper layer with a thickness of 2.5 mm, and then pure nickel is electroplated to form a nickel layer with a thickness of 0.05 mm.

[0151] Example 3

[0152] Step 1: Preparation of the preform for the metal-based diamond composite material

[0153] Diamond powder with a particle size of 100 mesh is made into a preform. The preform is placed in a mold and then placed in a melting furnace. Oxygen-free copper is infiltrated into the preform. The preform is then melt-infiltrated and formed at 1150℃ to obtain a metal-coated diamond composite material preform.

[0154] Step 2: Forming the hot-pressed layer

[0155] A hot-pressed layer is formed around the billet by hot pressing, and the hot-pressed layer covers the side of the billet.

[0156] The hot-pressed layer is made of copper-chromium alloy, wherein the chromium content is 1% by mass; the thickness of the hot-pressed layer is 3 mm; the hot-pressing temperature is 950°C; and the hot-pressing pressure is 40 MPa.

[0157] Step 3: Formation of physical vapor deposition layer

[0158] A first physical vapor deposition layer covering the top surface of the billet and a second physical vapor deposition layer covering the bottom surface of the billet are formed by physical vapor deposition, and then heat treatment is performed.

[0159] The first physical vapor deposition layer consists of two layers: the first physical vapor deposition layer adjacent to the billet is made of boron, and the other first physical vapor deposition layer is made of copper; the second physical vapor deposition layer consists of two layers: the second physical vapor deposition layer adjacent to the billet is made of boron, and the other second physical vapor deposition layer is made of copper; the physical vapor deposition time is 50 minutes; the physical vapor deposition pressure is 30 MPa; the physical vapor deposition power is 100 W; the total thickness of the first physical vapor deposition layer is 0.3 μm; the total thickness of the second physical vapor deposition layer is 0.3 μm.

[0160] The heat treatment temperature is 800℃; the heat treatment time is 1 hour; the vacuum degree of the heat treatment is <1Pa.

[0161] Step 3: Forming the electroplated layer

[0162] A first electroplating layer is formed on the surface of the first physical vapor deposition layer away from the blank by electroplating, and a second electroplating layer is formed on the surface of the second physical vapor deposition layer away from the blank by electroplating. The first electroplating layer and the second electroplating layer respectively cover the first physical vapor deposition layer and the second physical vapor deposition layer.

[0163] The first electroplating layer consists of two layers: first, pure copper is electroplated to form a copper layer with a thickness of 2.5 mm, and then pure nickel is electroplated to form a nickel layer with a thickness of 0.05 mm. The second electroplating layer also consists of two layers: first, pure copper is electroplated to form a copper layer with a thickness of 2.5 mm, and then pure nickel is electroplated to form a nickel layer with a thickness of 0.05 mm.

[0164] Comparative Example 1

[0165] Step 1: Preparation of the preform for the metal-based diamond composite material

[0166] Diamond powder with a particle size of 100 mesh is made into a preform. The preform is placed in a mold and then placed in a melting furnace. Oxygen-free copper is infiltrated into the preform. The preform is then melt-infiltrated and formed at 1150℃ to obtain a metal-coated diamond composite material preform.

[0167] The metal-based diamond composite materials obtained in Examples 1 to 3 and Comparative Example 1 were tested for thermal conductivity, surface roughness, thermal conductivity decay characteristics under temperature cycling and high-temperature life. The test results are shown in Table 1 below.

[0168] The testing method is as follows:

[0169] Thermal conductivity properties: The test was conducted using the laser flash method, referring to the "Method for Measurement of Thermal Conductivity of Metals at High Temperature (GB / T 3651-2008)".

[0170] Surface roughness: tested using a roughness tester;

[0171] Thermal conductivity decay characteristics under temperature cycling and high-temperature life: The thermal conductivity decay characteristics under temperature cycling at -50℃ and +125℃ were determined using a high and low temperature thermal shock test chamber; the thermal conductivity decay characteristics under a high-temperature life of 1000h / 135℃ were tested using a high-temperature life test chamber.

[0172] Table 1 Performance test results of metallic diamond composite materials

[0173]

[0174] As shown in Table 1, compared with Comparative Example 1, the thermal conductivity of the metal-based diamond composite materials prepared in Examples 1 to 3 is closer to that of the preform material, indicating that the metal-based diamond composite materials prepared in Examples 1 to 3 still have good thermal conductivity. Moreover, compared with Comparative Example 1, the metal-based diamond composite materials prepared in Examples 1 to 3 have less thermal conductivity decay under temperature cycling and high-temperature life, indicating that the material has better stability.

[0175] Compared with Comparative Example 1, the metal-based diamond composite materials prepared in Examples 1 to 3 have lower surface roughness, which is more conducive to improving the product stability after the material is welded to the chip.

[0176] Figure 2 and Figure 3 The SEM scan image of the interface of the metal-based diamond composite material prepared in Example 1 is shown. It can be seen that the metal-based diamond composite material obtained after physical vapor deposition and electroplating does not show delamination, and the interface between the preform and the physical vapor deposition layer is well bonded.

[0177] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0178] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the inventive concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for manufacturing a metal-based diamond composite material, characterized in that, Includes the following steps: Provide blanks for metal-based diamond composite materials; A first physical vapor deposition layer covering the top surface of the billet and a second physical vapor deposition layer covering the bottom surface of the billet are formed by physical vapor deposition, and then heat treatment is performed. A first electroplated layer is formed on the surface of the first physical vapor deposition layer away from the billet by electroplating, and a second electroplated layer is formed on the surface of the second physical vapor deposition layer away from the billet by electroplating, wherein the first electroplated layer and the second electroplated layer respectively cover the first physical vapor deposition layer and the second physical vapor deposition layer. The first physical vapor deposition layer and the second physical vapor deposition layer each have one or more layers independently, and the materials of the first physical vapor deposition layer and the second physical vapor deposition layer that are adjacent to the blank include at least one element selected from chromium and boron. The first electroplated layer and the second electroplated layer each have one or more layers independently, and the materials of the first electroplated layer adjacent to the first physical vapor deposition layer and the second electroplated layer adjacent to the second physical vapor deposition layer are selected from pure copper.

2. The method for manufacturing the metal-based diamond composite material according to claim 1, characterized in that, The materials of the first physical vapor deposition layer and / or the second physical vapor deposition layer also include copper.

3. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, The process of forming a first physical vapor deposition layer covering the top surface of the preform and a second physical vapor deposition layer covering the bottom surface of the preform by physical vapor deposition satisfies one or more of the following conditions (1) to (5): (1) The physical vapor deposition time is 10 minutes to 50 minutes; (2) The pressure for physical vapor deposition is 30 MPa to 50 MPa; (3) The power of physical vapor deposition is 100W~300W; (4) The total thickness of the first physical vapor deposition layer is 0.1 μm to 0.5 μm; (5) The total thickness of the second physical vapor deposition layer is 0.1 μm to 0.5 μm.

4. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, The heat treatment satisfies one or more of the following conditions (1) to (3): (1) The heat treatment temperature is 500℃~800℃; (2) The heat treatment time is 1 to 2 hours; (3) The vacuum degree of heat treatment is <1 Pa.

5. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, The first electroplated layer satisfies one or more of the following conditions (1) to (3): (1) The first electroplating layer has one layer, and the material of the first electroplating layer is selected from pure copper; (2) The first electroplating layer has multiple layers. The material of the first electroplating layer adjacent to the first physical vapor deposition layer is selected from pure copper, and the material of the other first electroplating layers is selected from pure copper or pure nickel. (3) The total thickness of the first electroplated layer is 0.3mm~3mm.

6. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, The second electroplated layer satisfies one or more of the following conditions (1) to (3): (1) The second electroplating layer has one layer, and the material of the second electroplating layer is selected from pure copper; (2) The second electroplating layer has multiple layers. The material of the second electroplating layer adjacent to the second physical vapor deposition layer is selected from pure copper, and the material of the other second electroplating layers is selected from pure copper or pure nickel. (3) The total thickness of the second electroplated layer is 0.3mm~3mm.

7. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, Before the formation of the first physical vapor deposition layer and the second physical vapor deposition layer, or After forming the first physical vapor deposition layer and the second physical vapor deposition layer and performing heat treatment, and before forming the first electroplated layer and the second electroplated layer, the following steps are also included: A hot-pressed layer is formed around the blank by hot pressing, and the hot-pressed layer at least covers the side surface of the blank.

8. The manufacturing method according to claim 7, characterized in that, The manufacturing method also satisfies one of the following conditions (1) to (3): (1) The hot-pressed layer only covers the side of the blank, and the material of the hot-pressed layer is selected from pure copper, copper-chromium alloy or copper-boron alloy; (2) The hot-pressed layer also covers at least one of the top and bottom surfaces of the blank, and the step of forming the hot-pressed layer is before the formation of the first physical vapor deposition layer and the second physical vapor deposition layer. The material of the hot-pressed layer is selected from copper-chromium alloy or copper-boron alloy. (3) The hot-pressed layer also covers at least one of the top and bottom surfaces of the blank, and the step of forming the hot-pressed layer is after forming the first physical vapor deposition layer and the second physical vapor deposition layer and heat treatment, and the material of the hot-pressed layer is selected from pure copper, copper-chromium alloy or copper-boron alloy.

9. The manufacturing method according to claim 8, characterized in that, The manufacturing method also satisfies one or more of the following conditions (1) to (2): (1) The mass content of chromium in the copper-chromium alloy is 0.1%~2%; (2) The mass content of boron in the copper-boron alloy is 0.1%~2%.

10. The manufacturing method according to claim 7, characterized in that, The manufacturing method also satisfies one or more of the following conditions (1) to (3): (1) The thickness of the hot-pressed layer is 1mm~3mm; (2) The hot pressing temperature is 850℃~1020℃; (3) The pressure of hot pressing is 30MPa~50MPa.

11. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, The blank is obtained through the following steps: It is prepared by melt infiltration using diamond powder and oxygen-free metal as raw materials.

12. The manufacturing method according to claim 11, characterized in that, The manufacturing method also satisfies one or more of the following conditions (1) to (3): (1) The particle size of the diamond powder is 40 mesh to 350 mesh; (2) The oxygen-free metal includes oxygen-free copper or oxygen-free aluminum; (3) During the process of preparing the blank by melt infiltration, the temperature is 1085℃~1300℃.

13. The method for manufacturing the metal-based diamond composite material according to any one of claims 1 to 2, characterized in that, After forming the first electroplated layer and the second electroplated layer, the method further includes a step of grinding the surfaces of the first electroplated layer and the second electroplated layer.

14. The manufacturing method according to claim 13, characterized in that, After grinding, the surface roughness of the first electroplated layer and the second electroplated layer is less than 0.

8.

15. A metal-based diamond composite material, characterized in that, It is prepared by the method for preparing the metal-based diamond composite material as described in any one of claims 1 to 14.

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