Laser emission circuit and laser radar

Abstract

The embodiment of the application discloses a laser emission circuit and a laser radar. The laser emission circuit comprises a laser array and an emission driving circuit. The laser array comprises m*n laser diodes. The emission driving circuit comprises a charging circuit, a first diode, m anode energy conversion circuits capable of being independently controlled to be turned on, and n cathode driving circuits capable of being independently controlled to be turned on. The emission driving circuit turns on the anode energy conversion circuit and the cathode driving circuit connected to the selected laser diode to store the electric energy stored in the charging circuit by the turned-on anode energy conversion circuit and release the electric energy stored in the anode energy conversion circuit by the turned-on cathode driving circuit, so as to realize the driving of the selected laser diode to emit light.

Description

Technical Field

[0001] This application relates to the field of lidar technology, and in particular to a laser emitting circuit and lidar. Background Technology

[0002] In lidar, the laser emitting circuit is used to emit laser light. This circuit typically includes a laser and a driving circuit; the laser emits light, and the driving circuit drives the laser to emit light. As lidar technology moves towards integration, the lasers in the emitting circuit have evolved from discrete single lasers to two-dimensional laser arrays. How to drive these two-dimensional laser arrays to emit light has become a technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0003] This application provides a laser emitting circuit and a lidar, which can drive a selected laser diode to emit light.

[0004] In a first aspect, embodiments of this application provide a laser emitting circuit, including a laser array and an emitting drive circuit; The laser array comprises m*n laser diodes; where m and n are the number of rows and columns of the laser diodes in the laser array, respectively, and are both positive integers greater than 1; in the laser array, the anodes of the laser diodes located in the same row are electrically connected and lead out to a common anode terminal, and the cathodes of the laser diodes located in the same column are electrically connected and lead out to a common cathode terminal; the laser array has m common anode terminals and n common cathode terminals; The emission driving circuit includes a charging circuit, a first diode, m individually controllable anode-to-energy conversion circuits, and n individually controllable cathode driving circuits. The charging circuit is connected to the emission power supply and stores electrical energy. The anode of the first diode is connected to the charging circuit, and the cathode is connected to one end of each of the m anode-to-energy conversion circuits. The other ends of the m anode-to-energy conversion circuits are connected to the m common anode terminals respectively. The n common cathode terminals are connected to one end of each of the n cathode driving circuits, and the other ends of the n cathode driving circuits are grounded. The emission driving circuit selects and activates the anode-to-energy conversion circuit and cathode driving circuit connected to the selected light-emitting laser diode. This allows the activated anode-to-energy conversion circuit to store the electrical energy stored in the charging circuit, and the activated cathode driving circuit to release the stored electrical energy, driving the selected light-emitting laser diode to emit light.

[0005] Secondly, embodiments of this application provide a lidar, including the laser emitting circuit described above.

[0006] Based on the laser emitting circuit and lidar provided in this application, by selecting the anode energy conversion circuit and cathode driving circuit connected to the selected light-emitting laser diode and turning them on, the conducting anode energy conversion circuit can transfer the electrical energy stored in the charging circuit, and the conducting cathode driving circuit can release the electrical energy transferred in the anode energy conversion circuit, thereby driving the selected light-emitting laser diode to emit light, thus realizing the driving of any laser diode in the laser diode array to emit light. Attached Figure Description

[0007] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0008] Figure 1 This is a schematic diagram of the framework of laser emission current in related technologies; Figure 2 This is a schematic diagram of the framework of a laser emitting circuit provided in an embodiment of this application; Figure 3 This is a circuit diagram of a laser emitting circuit provided in an embodiment of this application; Figure 4 This is a circuit diagram of another laser emitting circuit provided in an embodiment of this application; Figure 5 This is a timing diagram of the m-channel anode addressing drive signals and m-channel reverse bias control signals provided in the embodiments of this application. Detailed Implementation

[0009] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0010] Where the following description relates to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended embodiments.

[0011] In the description of this application, it should be understood that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances. Furthermore, in the description of this application, unless otherwise stated, "multiple" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship.

[0012] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0013] Please see Figure 1 The laser emitting circuit 1 is used to emit laser light. Typically, the laser emitting circuit 1 includes a laser 11 and an emission driving circuit 12. The laser 11 emits laser light, and the emission driving circuit 12 drives the laser 11 to emit light. In related technologies, the laser 11 is a discrete single laser diode, and the emission driving circuit 12 is a driving circuit that drives the single laser diode to emit light. However, as lidar technology develops towards integration, the laser 11 included in the laser emitting circuit 1 has evolved from the initial discrete single laser diode 21 to a laser diode array. How to drive the laser diode array to emit light has become a technical problem that needs to be solved by those skilled in the art.

[0014] Please see Figures 2 to 4 As shown, in a first aspect, this application provides a laser emitting circuit 300, which includes a laser diode array LDm*n and an emission driving circuit 100. The laser diode array LDm*n includes m*n laser diodes 210, where m and n are both positive integers, and at least one of m and n is greater than 1. The emission driving circuit 100 is connected to the m*n laser diodes 210 and is used to drive the m*n laser diodes 210 in the laser diode array LDm*n to emit light according to a preset timing sequence.

[0015] Further, m is the number of rows of laser diodes 210 included in the laser diode array LDm*n, and n is the number of columns of laser diodes 210 included in the laser diode array LDm*n. That is, the laser diode array LDm*n is a one-dimensional array or a two-dimensional array. In the laser diode array LDm*n, the anodes of laser diodes 210 located in the same row are electrically connected and lead out a common anode terminal 211, and m rows of laser diodes 210 lead out a total of m common anode terminals 211. The cathodes of laser diodes 210 located in the same column are electrically connected and lead out a common cathode terminal 212, and n columns of laser diodes 210 lead out a total of n common cathode terminals 212.

[0016] Furthermore, the emission driving circuit 100 includes a charging circuit 110, a first diode D1, m individually controllable anode-to-energy conversion circuits 120, and n individually controllable cathode driving circuits 130. The charging circuit 110 is connected to the emission power supply E and is used to charge the diode using the electrical energy provided by the emission power supply E, thereby storing electrical energy. The anode of the first diode D1 is connected to the charging circuit 110, and its cathode is connected to one end of each of the m anode-to-energy conversion circuits 120. The other ends of the m anode-to-energy conversion circuits 120 are respectively connected to the m common anode terminals 211. One end of each of the n cathode driving circuits 130 is respectively connected to the n common cathode terminals 212 led out from the laser diode array LDm*n, and the other end of the n cathode driving circuits 130 is grounded (GND).

[0017] Furthermore, m anode power conversion circuits 120 and n cathode driving circuits 130 are combined to form m*n emission driving channels P1*1~P1*n, ..., Pm*1~Pm*n. Among them, the emission driving channel Px*y includes the x-th anode power conversion circuit 120 and the y-th cathode driving circuit 130. The x-th anode power conversion circuit 120 is the anode power conversion circuit 120 connected to the x-th common anode terminal 211, and the y-th cathode driving circuit 130 is the cathode driving circuit 130 connected to the y-th common cathode terminal 212. x and y are both positive integers, and 1≤x≤m, 1≤y≤n (the same applies below). m common anode terminals 211 and n common cathode terminals 212 are combined to form m*n transmitter driver terminal combinations G1*1~G1*n, ..., Gm*1~Gm*n, where the transmitter driver terminal combination Gx*y includes the x-th common anode terminal 211 and the y-th common cathode terminal 212. The x-th common anode terminal 211 is the common anode terminal 211 led out by the laser diode 210 in the x-th row, and the y-th common cathode terminal 212 is the common cathode terminal 212 led out by the laser diode 210 in the y-th row.

[0018] In this embodiment, there are m*n transmit drive channels P1*1~P1*n, ..., Pm*1~ Pm*n enters the startup state sequentially according to a preset timing sequence. Among them, the xth anode energy conversion circuit 120 included in any emission drive channel Px*y in the startup state is turned on. The turned-on xth anode energy conversion circuit 120 receives the current output by the charging circuit 110 through the first diode D1 to transfer the electrical energy stored in the charging circuit 110. The yth cathode drive circuit 130 included in any emission drive channel Px*y in the startup state is turned on so that the common cathode terminal 212 of the corresponding column (yth column) laser diode 210 is grounded to GND. Then, the electrical energy transferred by the xth anode energy conversion circuit 120 is used to form a positive bias voltage between the corresponding common anode terminal 211 (xth row common anode terminal) and common cathode terminal 212 (yth column common cathode terminal). That is, a positive bias voltage is formed between the anode and cathode of the corresponding laser diode 210 (laser diode 210 in the xth row and yth column) to drive the corresponding laser diode 210 to emit light.

[0019] The m*n emission drive channels P1*1~P1*n, ..., Pm*1~Pm*n sequentially enter the start-up state according to a preset timing sequence. A forward bias voltage is applied between the common anode terminal 211 and common cathode terminal 212 of each of the m*n emission drive terminal combinations G1*1~G1*n, ..., Gm*1~Gm*n. This, in turn, applies a forward bias voltage between the anode and cathode of each of the m*n laser diodes 210, driving them to emit light sequentially according to the preset timing sequence. This allows the emitted laser light from the m*n laser diodes 210 to scan across the detection area. For example, when emission drive channel Px*y starts, it applies a forward bias voltage to the laser diode 210 located at position (x, y), i.e., the laser diode 210 in the xth row and yth column, driving it to emit light.

[0020] Among them, "preset timing sequence" refers to the startup sequence that is pre-set by the control unit. m*n emission drive channels P1*1~P1*n, ..., Pm*1~Pm*n drive m*n laser diodes 210 to emit lasers sequentially according to a preset timing sequence. For example, emission drive channel P1*1 can be activated first to drive the laser diode 210 at position (1,1) to emit light, then emission drive channel P1*2 can be activated to drive the laser diode 210 at position (1,2) to emit light, and so on, until emission drive channel P1*n is activated to drive the laser diode 210 at position (1,n) to emit light. Then emission drive channel P2*1 can be activated to drive the laser diode 210 at position (2,1), then emission drive channel P2*2 can be activated to drive the laser diode 210 at position (2,2) to emit light, and so on, until emission drive channel P2*n is activated to drive the laser diode 210 at position (2,n) to emit light, and so on, until emission drive channel Pm*n is activated to drive the laser diode 210 at position (m,n) to emit light.

[0021] The laser emitting circuit 300 provided in this application turns on the anode energy conversion circuit 120 connected to the selected light-emitting laser diode 210 to transfer the electrical energy stored in the charging circuit 110. Then, it turns on the cathode driving circuit 130 connected to the selected light-emitting laser diode 210 and grounds it to GND to form a forward bias voltage between the anode and cathode of the selected light-emitting laser diode 210, thereby driving the selected light-emitting laser diode 210 to emit light. This enables any laser diode 210 in the laser diode array LDm*n to emit light.

[0022] The first diode D1 has a unidirectional conduction characteristic. The current output by the charging circuit 110 can flow to the m anode conversion circuits 120 through the first diode D1. However, the current output by the m anode conversion circuits 120 cannot flow to the charging circuit 110 through the first diode D1 in the reverse direction, which can improve the isolation between the charging circuit 110 and the m anode conversion circuits 120.

[0023] In some embodiments, the first diode D1 is a germanium diode; in other embodiments, the first diode D1 is a silicon diode. In some preferred embodiments, the first diode D1 is a germanium diode. A germanium diode, being a diode made of germanium material, has the advantage of a low forward voltage drop, thus enabling a fast response. Specifically, a germanium diode starts to draw current at 0.1V, while a silicon diode only starts to draw current at 0.5V. When the anode-to-energy conversion circuit 120 connected to the selected light-emitting laser diode 210 is turned on, the first diode D1 can correspondingly turn on quickly, outputting current to the anode-to-energy conversion circuit 120. This facilitates the anode-to-energy conversion circuit 120 to quickly transfer the energy stored in the charging circuit 110, thereby facilitating the rapid driving of the laser diode 210 to emit light and improving the light-emitting response speed of the laser diode 210.

[0024] like Figure 2 As shown, each anode energy conversion circuit 120 further includes an anode drive circuit 121 and an anode energy storage element 122; the m anode energy conversion circuits 120 include m anode drive circuits 121 and m anode energy storage elements 122. One end of each of the m anode drive circuits 121 is connected to the cathode of the first diode D1, and the other end of each of the m anode drive circuits 121 is electrically connected to one end of each of the m anode energy storage elements 122, and is also electrically connected to one of the m common anode terminals 211 of the laser diode array LDm*n. The other end of each of the m anode energy storage elements 122 is grounded to GND. The anode energy storage element 122 can be a capacitor.

[0025] Based on the above embodiments, the startup of m*n transmit drive channels P1*1~P1*n, ..., Pm*1~Pm*n each includes two stages: an energy conversion stage and an energy release stage. The following description uses transmit drive channel Px*y as an example to illustrate these two stages during startup.

[0026] Energy conversion stage: The xth anode drive circuit 121 included in the transmission drive channel Px*y is turned on. The charging circuit 110 provides current to the xth anode drive circuit 121 through the first diode D1. The xth anode drive circuit 121 is turned on along the direction of the current toward the xth anode energy storage element 122. The xth anode drive circuit 121 uses the received current to charge the xth anode energy storage element 122. The xth anode energy storage element 122 is the anode energy storage element 122 connected to the xth anode drive circuit 121. Energy release phase: After the energy conversion is completed, the yth cathode driving circuit 130140 included in the emission driving channel Px*y is turned on along the direction from the xth common cathode terminal 212 to ground GND. The xth anode energy storage element 122 uses the stored electrical energy to form a positive bias voltage between the xth common anode terminal 211 and the yth common cathode terminal 212 included in the emission driving terminal combination Gx*y. This positive bias voltage drives the laser diode 210 located in the xth row and yth column to emit light.

[0027] like Figure 3 As shown, taking any one anode drive circuit 121 as an example, assuming that any one anode drive circuit 121 is the x-th anode drive circuit 121; the x-th anode drive circuit 121 includes an anode addressing switch circuit, which includes an anode addressing switch element Q2. One end of the anode addressing switch element Q2 is connected to the cathode of the first diode D1, and the other end is connected to one end of the corresponding anode energy storage element 122 and the common anode terminal 211. The control terminal receives the anode addressing drive signal TX_HS_EN_x; the anode addressing drive signal TX_HS_EN_x is used to control the anode addressing switch element Q2 of the x-th anode drive circuit 121 to be in the on or off state, so as to control the x-th anode energy conversion circuit 120 to be on or off; the anode energy storage element 122 is used to transfer the electrical energy stored in the charging circuit 110 when the connected anode addressing switch element Q2 is in the on state.

[0028] like Figure 3 As shown, taking any cathode driving circuit 130 as an example, assuming that any cathode driving circuit 130 is the y-th cathode driving circuit 130; the y-th cathode driving circuit 130 includes a cathode addressing switch element Q6; one end of the cathode addressing switch element Q6 is connected to the corresponding common cathode terminal 212, and the other end is grounded to GND. The control terminal receives the cathode addressing drive signal TX_LS_EN_y; the cathode addressing drive signal TX_LS_EN_y is used to control the cathode addressing switch element Q6 to be in the on state or the off state, so as to control the cathode driving circuit 130 to be on or off.

[0029] Specifically, when the laser diode 210 at position (x, y) is selected to emit light, in the x-th anode driving circuit 121 corresponding to the laser diode 210 at position (x, y), the anode addressing switch element Q2 is turned on under the control of the anode addressing drive signal TX_HS_EN_x; current passes through the anode addressing switch element Q2 to charge the anode energy storage element 122; at this time, the cathode addressing switch element Q6 in the y-th cathode driving circuit 130 corresponding to the laser diode 210 at position (x, y) is turned on under the control of the cathode addressing drive signal TX_LS_EN_y, and the anode energy storage element 122-laser diode 210-cathode driving circuit 130 form an energy release circuit, using the electrical energy stored in the anode energy storage element 122 to drive the laser diode 210 at position (x, y) to emit light. When the laser diode 210 at position (x, y) no longer needs to emit light, in the x-th anode driving circuit 121 corresponding to the laser diode 210 at position (x, y), the anode addressing switch element Q2 is turned off under the control of the anode addressing drive signal TX_HS_EN_x, and in the y-th cathode driving circuit 130 corresponding to the laser diode 210 at position (x, y), the cathode addressing switch element Q6 is turned off under the control of the cathode addressing drive signal TX_LS_EN_y.

[0030] Furthermore, in some specific embodiments, the anode addressing switch element Q2 in the xth anode drive circuit 121 includes a second NMOS transistor; the drain of the second NMOS transistor serves as one end of the anode addressing switch element Q2 and is connected to the cathode of the first diode D1; the source of the second NMOS transistor serves as the other end of the anode addressing switch element Q2 and is connected to the corresponding anode energy storage element 122 and the corresponding common anode terminal 211; the gate of the second NMOS transistor serves as the control terminal of the anode addressing switch element Q2 and is used to receive the anode addressing drive signal TX_HS_EN_x. In this case, the anode addressing drive signal is a positive voltage pulse signal.

[0031] In some other specific embodiments, the anode addressing switch element Q2 in the x-th anode drive circuit 121 includes a second PMOS transistor. The drain of the second PMOS transistor serves as one end of the anode addressing switch element Q2 and is connected to the cathode of the first diode D1. The source of the second PMOS transistor serves as the other end of the anode addressing switch element Q2 and is connected to the corresponding anode energy storage element 122 and the corresponding common anode terminal 211. The gate of the second PMOS transistor serves as the control terminal of the anode addressing switch element Q2 and receives the anode addressing drive signal TX_HS_EN_x. At this time, the anode addressing drive signal is a negative voltage pulse signal.

[0032] In some embodiments, the cathode selection switch element Q6 in the y-th cathode driving circuit 130 includes a sixth NMOS transistor. The drain of the sixth NMOS transistor serves as one end of the cathode selection switch element Q6 and is connected to the corresponding common cathode terminal 212. The source of the sixth NMOS transistor serves as the other end of the cathode selection switch element Q6 and is grounded to GND. The gate of the first MOS transistor serves as the control terminal of the cathode selection switch element Q6 and receives the cathode selection drive signal TX_LS_EN_y. At this time, the cathode selection drive signal TX_LS_EN_y is a positive voltage pulse signal.

[0033] In some other embodiments, the cathode addressing switch element Q6 includes a sixth PMOS transistor. The source of the sixth PMOS transistor serves as one end of the cathode addressing switch element Q6 and is connected to the corresponding common cathode terminal 212. The drain of the sixth PMOS transistor serves as the other end of the cathode addressing switch element Q6 and is grounded to GND. The gate of the sixth PMOS transistor serves as the control terminal of the cathode addressing switch element Q6 and receives the cathode addressing drive signal TX_LS_EN_y. In this case, the cathode addressing drive signal TX_LS_EN_y is a negative voltage pulse signal.

[0034] Please continue reading. Figure 3 The anode drive circuit 121 also includes an anode unidirectional conduction element Q3 and an anode reverse biasing switch element Q4; the anode unidirectional conduction element Q3 is connected between the other end of the anode addressing switch element Q2 and the anode energy storage element 122 correspondingly connected to the anode addressing switch element Q2; one end of the anode reverse biasing switch element Q4 is connected to the common terminal of the anode unidirectional conduction element Q3 and the anode addressing switch element Q2, and the other end is grounded to GND; the control terminal of the anode reverse biasing switch element Q4 receives the reverse biasing control signal TX_HS_EN_L_x; the anode unidirectional conduction element Q3 is in the conducting state when the anode addressing switch element Q2 is in the conducting state. When the anode addressing switch Q2 is in the off state, the anode is in the forward bias state; when the anode addressing switch Q2 is in the off state, the anode reverse biasing switch Q4 is in the off state under the control of the reverse biasing control signal TX_HS_EN_L_x, so as to realize that the anode unidirectional conducting element Q3 is in the forward bias state; the anode reverse biasing switch element is also used to be in the conducting state when the anode addressing switch Q2 is in the off state under the control of the reverse biasing control signal TX_HS_EN_L_x, so as to realize that the anode unidirectional conducting element Q3 is in the reverse bias state.

[0035] It is understandable that when the anode addressing switch element Q2 is in the off state and the anode unidirectional element Q3 is in the reverse bias state, no current can flow between the anode addressing switch element Q2 and the corresponding common anode terminal 211. This improves the isolation of the anode addressing switch circuit and reduces the possibility of the second NMOS transistor, which is in the off state, being turned on by crosstalk from electrical signals in other channels.

[0036] In this application, the anode addressing switch element Q2 and the anode reverse biasing switch element Q4 have opposite states, which can control the anode unidirectional conducting element Q3 to be in a forward conducting state or a reverse biasing state; when the anode addressing switch element Q2 is on and the anode reverse biasing switch element Q4 is off, the anode unidirectional conducting element Q3 is in a conducting state; when the anode addressing switch element Q2 is off and the anode reverse biasing switch element Q4 is on, the anode unidirectional conducting element Q3 is in a reverse biasing state.

[0037] Specifically, when the laser diode 210 at position (x, y) needs to emit light, in the x-th anode driving circuit 121 corresponding to the laser diode 210 at position (x, y), the anode addressing switch element Q2 is turned on, the anode reverse biasing switch element Q4 is turned off, and the anode unidirectional conducting element Q3 is in the forward conducting state; the current output by the charging circuit 110 charges the anode energy storage element 122 through the anode addressing switch element Q2 and the anode unidirectional conducting element Q3; at this time, the y-th cathode driving circuit 130 corresponding to the laser diode 210 at position (x, y) is turned on, and the anode energy storage element 122-laser diode 210-cathode driving circuit 130 form an energy release loop, using the electrical energy stored in the anode energy storage element 122 to drive the laser diode 210 at position (x, y) to emit light. When the laser diode 210 at position (x, y) no longer needs to emit light, in the x-th anode driving circuit 121 corresponding to the laser diode 210 at position (x, y), the anode addressing switch element Q2 is turned off, the anode reverse bias switch element Q4 is turned on, and the anode unidirectional conduction element Q3 is in a reverse bias state; the charging circuit 110 stops charging the anode energy storage element 122.

[0038] like Figure 3As shown, in some embodiments, the anode addressing switch element Q2 in the x-th anode drive circuit 121 includes a second NMOS transistor; the anode unidirectional conduction element Q3 in the x-th anode drive circuit 121 includes a third NMOS transistor; the anode reverse bias switch element Q4 in the x-th anode drive circuit 121 includes a fourth NMOS transistor, the drain of the third NMOS transistor serves as one end of the anode unidirectional conduction element Q3 and is electrically connected to the source of the second NMOS transistor at the other end; the source of the third NMOS transistor serves as the other end of the anode unidirectional conduction element Q3 and is connected to the corresponding anode energy storage element 122 and the common anode terminal 211; the third NMOS transistor... The gate of the third NMOS transistor serves as the control terminal of the anode unidirectional conduction element Q3, receiving the unidirectional conduction control signal. The gate of the third NMOS transistor is connected to the gate of the second NMOS transistor; that is, the unidirectional conduction signal is the anode addressing drive signal TX_HS_EN_x. The drain of the fourth NMOS transistor serves as one end of the anode reverse biasing switch element Q4, connected to the common terminal of the source of the second NMOS transistor and the anode addressing switch element Q2. The source of the fourth NMOS transistor serves as the other end of the anode reverse biasing switch element Q4, grounded to GND. The gate of the fourth NMOS transistor serves as the control terminal of the anode reverse biasing switch element Q4, receiving the reverse bias control signal TX_HS_EN_L. At this time, the anode addressing drive signal TX_HS_EN_x is a positive voltage pulse signal. The reverse bias control signal TX_HS_EN_L is obtained by inverting the anode addressing drive signal TX_HS_EN_x to obtain a negative voltage pulse signal.

[0039] Understandably, the second and fourth NMOS transistors are in opposite states. When the second NMOS transistor is in the off state, the fourth NMOS transistor is in the on state. The source of the third NMOS transistor is grounded through the fourth NMOS transistor, and the third NMOS transistor is in the reverse bias state. No current can flow between the second NMOS transistor and its corresponding common anode terminal 211, which improves the isolation of the anode addressing switch circuit and reduces the possibility of the second NMOS transistor, which is in the off state, being turned on by crosstalk from electrical signals in other channels.

[0040] In some other specific embodiments, the anode selection switch element Q2 in the x-th anode drive circuit 121 includes a second PMOS transistor; the anode unidirectional conduction element Q3 includes a third PMOS transistor; the anode reverse bias switch element Q4 includes a fourth PMOS transistor; the source of the third PMOS transistor serves as one end of the anode unidirectional conduction element Q3 and is connected to the source of the second PMOS transistor; the drain of the third PMOS transistor serves as the other end of the anode unidirectional conduction element Q3 and is connected to the corresponding anode energy storage element 122 and common anode terminal 211; the gate of the third PMOS transistor serves as the anode unidirectional conduction element Q4. The control terminal of transistor 3 receives a unidirectional conduction control signal, and the gate of the third PMOS transistor is connected to the gate of the second PMOS transistor. That is, the unidirectional conduction signal is the anode addressing drive signal TX_HS_EN_x. The source of the fourth PMOS transistor, acting as one end of the anode reverse biasing switch Q4, is connected to the sources of both the second and third PMOS transistors. The drain of the fourth PMOS transistor, acting as the other end of the anode reverse biasing switch Q4, is grounded to GND. The gate of the fourth PMOS transistor, acting as the control terminal of the anode reverse biasing switch Q4, is connected to the reverse biasing control signal TX_HS_EN_L_x. At this time, the anode addressing drive signal TX_HS_EN_x is a negative voltage pulse signal, and the reverse biasing control signal TX_HS_EN_L_x is a positive voltage pulse signal obtained by inverting the anode addressing drive signal TX_HS_EN_x.

[0041] Understandably, the second and fourth PMOS transistors are in opposite states. When the second PMOS transistor is in the off state, the fourth PMOS transistor is in the on state. The source of the third PMOS transistor is grounded through the fourth PMOS transistor, and the third PMOS transistor is in the reverse bias state. No current can flow between the second NMOS transistor and its corresponding common anode terminal 211, which improves the isolation of the anode addressing switch circuit and reduces the possibility of the second PMOS transistor, which is in the off state, being turned on by crosstalk from electrical signals in other channels.

[0042] Please see Figure 4In some embodiments, the anode addressing switch element Q2 in the xth anode drive circuit 121 includes a second NMOS transistor; the anode unidirectional conduction element Q3 includes a third diode D3D3; the anode reverse biasing switch element Q4 includes a fourth NMOS transistor; the drain of the second NMOS transistor serves as one end of the anode addressing switch element Q2 and is connected to the cathode of the first diode D1; the source of the second NMOS transistor serves as the other end of the anode addressing switch element Q2 and is connected to the anode of the third diode D3D3; the gate of the second NMOS transistor serves as the anode addressing switch element Q4. The control terminal of diode 2 receives the anode addressing drive signal TX_HS_EN_x; the cathode of the third diode D3 is connected to the corresponding anode energy storage element C and the common anode terminal 211; the drain of the fourth NMOS transistor serves as one end of the anode reverse biasing switch element Q4, and is connected to the source of the second NMOS transistor and the source of the third NMOS transistor; the source of the fourth NMOS transistor serves as the other end of the anode reverse biasing switch element Q4, and is grounded; the gate of the fourth NMOS transistor serves as the control terminal of the anode reverse biasing switch element Q4, and receives the reverse bias control signal TX_HS_EN_L_x. At this time, the anode addressing drive signal TX_HS_EN_x is a positive voltage pulse signal, and the reverse bias control signal TX_HS_EN_L_x is a negative voltage pulse signal obtained by inverting the anode addressing drive signal TX_HS_EN_x.

[0043] Understandably, the second and fourth NMOS transistors are in opposite states. When the second NMOS transistor is in the off state, the fourth NMOS transistor is in the on state. The positive terminal of the third diode is grounded through the fourth NMOS transistor, and the third diode D3 is in the reverse bias state. No current can flow between the second NMOS transistor and its corresponding common anode terminal 211, which improves the isolation of the anode addressing switch circuit and reduces the possibility of the second NMOS transistor, which is in the off state, being turned on by crosstalk from electrical signals in other channels.

[0044] Please see Figure 3-4In some embodiments, the anode drive circuit 121 further includes a discharge circuit. The discharge circuit includes an anode discharge switch element Q5 and a discharge resistor R1; one end of the discharge resistor R1 is connected to the corresponding anode energy storage element 122 and the common anode terminal 211, and the other end is connected to one end of the anode discharge switch element Q5; the other end of the anode discharge switch element Q5 is grounded to GND; the control terminal of the anode discharge switch element Q5 receives a discharge control signal (not shown in the figure); the discharge control signal is used to control the anode discharge switch element Q5 to be in the off state when the anode addressing switch element Q2 is in the on state, and to control the anode discharge switch element Q5 to be in the on state when the anode addressing switch element Q2 is in the off state, so that the anode storage element 122-discharge resistor R1-anode discharge switch element Q5 form a discharge circuit, and the residual energy of the anode storage element 122 is discharged using the discharge circuit.

[0045] Specifically, when the laser diode 210 at position (x, y) no longer needs to emit light, in the x-th anode driving circuit 121 corresponding to the laser diode 210 at position (x, y), the anode addressing switch element Q2 is turned off, the anode reverse bias switch element Q4 is turned on, the anode unidirectional conduction element Q3 is in a reverse bias state, and the anode discharge switch element Q5 is turned on. The anode energy storage element 122 discharges the remaining energy through the discharge resistor R1 and the anode discharge switch element Q5, thereby effectively preventing the corresponding laser diode 210 from emitting light erroneously due to the presence of remaining energy in the anode energy storage element 122.

[0046] In some specific embodiments, the anode discharge switch element Q5 includes a fifth NMOS transistor. The drain of the fifth NMOS transistor serves as one end of the anode discharge switch element Q5 and is connected to the discharge resistor R1. The source of the fifth NMOS transistor serves as the other end of the anode discharge switch element Q5 and is grounded to GND. The gate of the fifth NMOS transistor serves as the control terminal of the anode discharge switch element Q5 and is used to receive the discharge control signal. At this time, the anode addressing switch element Q2 includes a second NMOS transistor, the anode reverse biasing switch element includes a fourth NMOS transistor, and the gate of the fifth NMOS transistor is connected to the gate of the fourth NMOS transistor. That is, the discharge control signal is the reverse biasing control signal TX_HS_EN_L_x, so that when the anode addressing switch element Q2 is in the on state, the anode discharge switch element Q5 is in the off state, and when the anode addressing switch element Q2 is in the off state, the anode discharge switch element Q5 is in the on state.

[0047] In some specific embodiments, the anode discharge switch element Q5 includes a fifth PMOS transistor. The source of the fifth PMOS transistor serves as one end of the anode discharge switch element Q5 and is connected to the discharge resistor R1. The drain of the fifth PMOS transistor serves as the other end of the anode discharge switch element Q5 and is grounded to GND. The gate of the fifth PMOS transistor serves as the control terminal of the anode discharge switch element Q5 and is used to receive the discharge control signal. In this case, the anode addressing switch element Q2 includes a second PMOS transistor, the anode reverse biasing switch element includes a fourth PMOS transistor, and the gate of the fifth PMOS transistor is connected to the gate of the fourth PMOS transistor. That is, the discharge control signal is the reverse biasing control signal TX_HS_EN_L_x, so that when the anode addressing switch element Q2 is in the on state, the anode discharge switch element Q5 is in the off state, and when the anode addressing switch element Q2 is in the off state, the anode discharge switch element Q5 is in the on state.

[0048] like Figure 3 As shown, the charging circuit 110 may include an energy storage element L and an anode charging switch element Q1. By controlling the conduction time of the anode charging switch element Q1, the electrical energy stored in the energy storage element L can be controlled, and then the electrical energy stored in the energy storage element L can be transferred to the corresponding anode energy storage element 122, thereby realizing the control of the electrical energy obtained by the anode energy storage element 122, and thus controlling the light emission power of the laser diode 210.

[0049] In some embodiments, the energy storage element L can be an inductor, and the anode charging switch element Q1 includes a first NMOS transistor. One end of the energy storage element L is connected to the transmitting power supply E, and the other end is connected to the drain of the first NMOS transistor. The source of the first NMOS transistor is grounded, and the gate of the first NMOS transistor is used to receive the anode charging control signal TX_Charge_EN. The anode charging control signal TX_Charge_EN controls the first NMOS transistor to turn on, so that the transmitting power supply charges the energy storage element L. By controlling the first NMOS transistor to turn off, the transmitting power supply E stops charging the energy storage element L, thereby controlling the amount of electrical energy stored in the energy storage element L.

[0050] Furthermore, TX_Charge_EN is a high-level pulse signal. By controlling the pulse width of the high-level pulse, the conduction time of the first NMOS transistor can be controlled, thereby controlling the electrical energy stored in the energy storage element L.

[0051] In other embodiments, the energy storage element L can be an inductor, and the anode charging switch element Q1 includes a first PMOS transistor. One end of the energy storage element L is connected to the transmitting power supply E, and the other end is connected to the source of the first PMOS transistor. The drain of the first PMOS transistor is grounded, and the gate of the first PMOS transistor is used to receive the anode charging control signal TX_Charge_EN. The anode charging control signal TX_Charge_EN controls the first PMOS transistor to turn on, so that the transmitting power supply charges the energy storage element L. By controlling the first PMOS transistor to turn off, the transmitting power supply E stops charging the energy storage element L, thereby controlling the amount of electrical energy stored in the energy storage element L.

[0052] Furthermore, TX_Charge_EN is a low-level pulse signal. By controlling the pulse width of the low-level pulse, the conduction time of the first PMOS transistor can be controlled, thereby controlling the electrical energy stored in the energy storage element L.

[0053] Please see Figure 3-4 In some embodiments, the laser emitting circuit 300 further includes an anode MOSFET driving circuit 140; the anode MOSFET driving circuit 140 includes m first MOSFET driving circuits 141 connected in parallel and m second MOSFET driving circuits 142 connected in parallel; the input terminals of the m first MOSFET driving circuits 141 receive a first positive voltage, and the input terminals of the m second MOSFET driving circuits 142 receive a first negative voltage; the m first MOSFET driving circuits 141 are sequentially turned on to sequentially output m positive voltage pulse signals TX_HS_EN_1, TX_HS_EN_2, ..., TX_HS_EN_m-1, TX_HS_EN_m (e.g., ..., TX_HS_EN_m-1, TX_HS_EN_m). Figure 5 As shown, the control terminals of the anode addressing switch element Q2 and the anode unidirectional conduction element Q3 (at this time, the anode unidirectional conduction element Q3 is a MOSFET) in the m anode addressing switch circuits are given; the m second MOSFET drive circuits 142 are synchronously turned on one-to-one with the m first MOSFET drive circuits to output m negative voltage pulse signals TX_HS_EN_L_1, TX_HS_EN_L_2, ..., TX_HS_EN_L_m-1, TX_HS_EN_L_m (as shown) Figure 5 As shown, the anode reverse biasing switch element Q4 and the discharge switch element Q5 are given in the circuit with m anode addressing switches.

[0054] When the unidirectional switching element includes a third NMOS transistor, the output terminals of the m first MOS transistor driving circuits are respectively connected to the gates of the m second NMOS transistors and the gates of the m third NMOS transistors, and the output terminals of the m second MOS transistor driving circuits are respectively connected to the gates of the m fourth NMOS transistors; when the unidirectional switching element includes a third diode D3, the output terminals of the m first MOS transistor driving circuits are respectively connected to the gates of the m second NMOS transistors, and the output terminals of the m second MOS transistor driving circuits are respectively connected to the gates of the m fourth NMOS transistors and the gates of the m fifth NMOS transistors. The positive voltage pulse TX_HS_EN_x output by the xth first MOS transistor driving circuit 141 is the anode addressing driving signal TX_HS_EN_x received by the xth anode driving circuit 1211; the negative voltage pulse TX_HS_EN_L_x output by the xth second MOS transistor driving circuit 142 is the reverse bias control signal TX_HS_EN_L_ received by the xth anode driving circuit 1211.

[0055] like Figure 3 and 4 As shown, each first MOS transistor drive circuit 141 includes a first switch K1 and a first driver Drive1 connected in series. One end of the first switch K1 is connected to a first positive voltage, and the other end is connected to one end of the first driver Drive1. The other end of the first driver Drive1 is used to output a positive voltage pulse signal. The first switches K1 of m first MOS transistor drive circuits 141 are turned on in sequence to output m negative voltage pulse signals TX_HS_EN_1, TX_HS_EN_2, ..., TX_HS_EN_m-1, TX_HS_EN_m in sequence. Each second MOS transistor drive circuit 142 includes a second switch K2 and a second driver Drive2 connected in series. One end of the second switch K2 is connected to a first negative voltage, and the other end is connected to one end of the second driver Drive2. The other end of the second driver Drive2 is used to output a negative voltage pulse signal. The second switches K2 of m second MOS transistor drive circuits 142 are turned on in sequence to output m negative voltage pulse signals TX_HS_EN_L_1, TX_HS_EN_L_2, ..., TX_HS_EN_L_m-1, TX_HS_EN_L_m in sequence.

[0056] Furthermore, in some embodiments, all components of the anode driving circuit 121 are made of silicon. This allows the components of the anode driving circuit 121 to be fabricated on the same silicon substrate, enabling the integration of m anode driving circuits 121 onto the same silicon substrate. This means the m anode driving circuits 121 are integrated into a single chip to form an anode driving chip, reducing the size of the laser emitting circuit 300 and thus facilitating a reduction in the size of the lidar. Specifically, as... Figure 3 As shown, the second NMOS transistor, the third NMOS transistor, the fourth NMOS transistor, the fifth NMOS transistor, and the discharge resistor R1 are all made of silicon material, so that m anode drive circuits 121 can be integrated on the same silicon substrate, that is, the m anode drive circuits 121 are integrated into a chip.

[0057] The laser emitting circuit provided in this application uses silicon for all components in the anode drive circuit 121, facilitating chip integration of the multi-channel anode drive circuit 121. Meanwhile, using silicon for the anode unidirectional conducting element Q3, such as the third diode, improves the isolation of the anode addressing switch circuit. However, when the third diode is made of silicon, the response speed is relatively slow because silicon diodes only start to draw current at 0.5V. The laser emitting circuit 300 provided in this application has a first diode D1 connected between the charging circuit 110 and the anode driving circuit 121. The first diode D1 is a germanium diode, and the germanium diode starts to have current at 0.1V in the forward direction, which can quickly conduct and output current to the anode energy conversion circuit 120. This facilitates the anode energy conversion circuit 120 to quickly transfer the electrical energy stored in the charging circuit 110, thereby facilitating the rapid driving of the laser diode 210 to emit light and improving the light emission response speed of the laser diode 210. In other words, the laser emitting circuit provided in this application, while ensuring the rapid energy conversion of the anode energy conversion circuit 120, also facilitates the chip integration of multiple anode driving circuits 121.

[0058] Furthermore, all components in the anode MOS transistor drive circuit 140 are made of silicon, and the anode MOS transistor drive circuit 140 and the m-channel anode drive circuit 121 are integrated into the same chip, i.e., within the anode drive chip, which facilitates further reduction in the size of the laser emission circuit 300.

[0059] Please see Figure 3-4 In some embodiments, the laser emitting circuit 300 includes a charging circuit 110 and a first diode D1; the other end of the charging circuit 110 is connected to the anode of the first diode D1, and the cathode of the first diode D1 is connected to one end of m anode-to-energy circuits 120 to provide power to the m anode-to-energy circuits 120.

[0060] In other implementations, the laser emitting circuit 300 includes X charging circuits 110 and X corresponding first diodes D1; ​​where X is a positive integer and 1≤X≤m.

[0061] When X=1, the other end of a charging circuit 110 is connected to the anode of a first diode D1, and the cathode of a first diode D1 is connected to one end of m anode-to-energy circuits 120 to provide power to the m anode-to-energy circuits 120. In this way, fewer electronic components are used in the charging circuit 110, reducing the cost of the components.

[0062] When 2≤X≤m, the xth charging circuit 110 is connected to the anode of the xth first diode D1; the cathode of the xth first diode D1 is connected to one end of one of the mx adjacent anode conversion circuits 120, which is used to provide power to the adjacent mx anode conversion circuits 120, where x is a positive integer and 1≤x≤X, m1+…+mX=m. In this way, one or more (less than m) corresponding anode conversion circuits 120 can be charged by one charging circuit 110, thereby improving the charging efficiency and thus improving the luminous efficiency of the laser diode array.

[0063] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0064] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A laser emitting circuit, characterized in that, Includes laser array and emission drive circuitry; The laser array includes m*n laser diodes; where m and n are the number of rows and columns of the laser diodes in the laser array, respectively, and both are positive integers greater than 1; in the laser array, the anodes of the laser diodes located in the same row are electrically connected and lead out a common anode terminal, and the cathodes of the laser diodes located in the same column are electrically connected and lead out a common cathode terminal; The transmission drive circuit includes a charging circuit, a first diode, m individually controllable anode energy conversion circuits, and n individually controllable cathode drive circuits. The charging circuit is connected to the transmission power supply and is used to store electrical energy. The first diode is a germanium diode, with its anode connected to the charging circuit and its cathode connected to one end of each of the m anode energy conversion circuits. The other ends of the m anode energy conversion circuits are connected to the m common anode terminals respectively. The n common cathode terminals are connected to one end of each of the n cathode drive circuits, and the other ends of the n cathode drive circuits are grounded. The anode energy conversion circuit includes an anode drive circuit and an anode energy storage element. All components of the anode drive circuit are made of silicon material, and the m anode drive circuits are integrated on the same silicon substrate.

2. The laser emitting circuit according to claim 1, characterized in that: The anode driving circuit includes an anode addressing switch circuit; the anode addressing switch circuit includes an anode addressing switch element; one end of the anode addressing switch element is connected to the cathode of the first diode, and the other end is connected to one end of the corresponding anode energy storage element and the common anode terminal; the control terminal receives the anode addressing drive signal; the other end of the anode energy storage element is grounded; the anode addressing drive signal is used to control the anode addressing switch element to be in a conducting state or a cut-off state, so as to control the anode energy conversion circuit to be on or off; the anode energy storage element is used to transfer the electrical energy stored in the charging circuit when the connected anode addressing switch element is in a conducting state.

3. The laser emitting circuit according to claim 2, characterized in that: The anode addressing switch circuit further includes an anode unidirectional conduction element and an anode reverse biasing switch element; the anode unidirectional conduction element is connected between the other end of the anode addressing switch element and the corresponding anode energy storage element; one end of the anode reverse biasing switch element is connected to the common terminal of the anode unidirectional conduction element and the anode addressing switch element, and the other end is grounded, with the control terminal receiving a reverse biasing control signal; the anode unidirectional conduction element is in a forward conduction state when the anode addressing switch element is in a conducting state, and in a reverse biasing state when the anode addressing switch element is in a cutoff state; under the control of the reverse biasing control signal, the anode reverse biasing switch element is in a cutoff state when the anode addressing switch element is in a conducting state, so as to realize that the anode unidirectional conduction element is in a forward conduction state; the anode reverse biasing switch element is also used to be in a conducting state when the anode addressing switch element is in a cutoff state under the control of the reverse biasing control signal, so as to realize that the anode unidirectional conduction element is in a reverse biasing state.

4. The laser emitting circuit according to claim 3, characterized in that: The anode addressing switching element includes a second NMOS transistor; the anode unidirectional conducting element includes a third NMOS transistor; the anode reverse biasing switching element includes a fourth NMOS transistor; the drain of the second NMOS transistor serves as one end of the anode addressing switching element and is connected to the cathode of the first diode; the source of the second NMOS transistor serves as the other end of the anode addressing switching element and is connected to the source of the third NMOS transistor; the gate of the second NMOS transistor serves as the control terminal of the anode addressing switching element and receives the anode addressing drive signal; the drain of the third NMOS transistor is connected to a pair of... The anode energy storage element and the common anode terminal are connected; the gate of the third NMOS transistor is connected to the gate of the second NMOS transistor; the drain of the fourth NMOS transistor serves as one end of the anode reverse bias switch element and is connected to the source of the second NMOS transistor and the source of the third NMOS transistor; the source of the fourth NMOS transistor serves as the other end of the anode reverse bias switch element and is grounded; the gate of the fourth NMOS transistor serves as the control terminal of the anode reverse bias switch element and receives the reverse bias control signal; the reverse bias control signal is the anode addressing switch signal after inversion. Alternatively, the anode addressing switch element includes a second NMOS transistor; the anode unidirectional conducting element includes a third diode; the anode reverse biasing switch element includes a fourth NMOS transistor; the drain of the second NMOS transistor serves as one end of the anode addressing switch element and is connected to the cathode of the first diode; the source of the second NMOS transistor serves as the other end of the anode addressing switch element and is connected to the anode of the third diode; the gate of the second NMOS transistor serves as the control terminal of the anode addressing switch element and receives the anode addressing drive signal; the cathode of the third diode is connected to the corresponding anode energy storage element and the common anode terminal; the drain of the fourth NMOS transistor serves as one end of the anode reverse biasing switch element and is connected to the source of the second NMOS transistor and the source of the third NMOS transistor; the source of the fourth NMOS transistor serves as the other end of the anode reverse biasing switch element and is grounded; the gate of the fourth NMOS transistor serves as the control terminal of the anode reverse biasing switch element and receives the reverse bias control signal; the reverse bias control signal is the anode addressing switch signal after inversion.

5. The laser emitting circuit according to claim 4, characterized in that: It also includes an anode MOSFET driving circuit; the anode MOSFET driving circuit includes m first MOSFET driving circuits and m second MOSFET driving circuits connected in parallel; the input terminals of the m first MOSFET driving circuits receive a first positive voltage, and the input terminals of the m second MOSFET driving circuits receive a first negative voltage; the m first MOSFET driving circuits are turned on sequentially to output positive voltage pulse signals sequentially; the m second MOSFET driving circuits are turned on synchronously with the m first MOSFET driving circuits in a one-to-one correspondence to output negative voltage pulse signals sequentially. When the anode unidirectional conduction switching element Q3 includes a third NMOS transistor, the output terminals of the m first MOS transistor driving circuits are respectively connected to the gates of the m second NMOS transistors and the gates of the m third NMOS transistors, and the output terminals of the m second MOS transistor driving circuits are respectively connected to the gates of the m fourth NMOS transistors and the gates of the m fifth NMOS transistors. When the unidirectional switching element includes a third diode, the output terminals of the m first MOS transistor driving circuits are respectively connected to the gates of the m second NMOS transistors, and the output terminals of the m second MOS transistor driving circuits are respectively connected to the gates of the m fourth NMOS transistors.

6. The laser emitting circuit according to claim 2, characterized in that: The anode drive circuit further includes a discharge circuit; the discharge circuit includes an anode discharge switch element and a discharge resistor; one end of the discharge resistor is connected to one end of the corresponding anode energy storage element and the common anode terminal, and the other end is connected to one end of the anode discharge switch element; the other end of the anode discharge switch element is grounded; the control terminal of the anode discharge switch element receives a discharge control signal; the discharge control signal is used to control the anode discharge switch element to be in the off state when the anode addressing switch element is in the on state, and to control the anode discharge switch element to be in the on state when the anode addressing switch element is in the off state.

7. The laser emitting circuit according to any one of claims 1-5, characterized in that: The laser emitting circuit includes X charging circuits and X corresponding first diodes; where X is a positive integer and 1≤X≤m; When X=1, the other end of one of the charging circuits is connected to the anode of one of the first diodes, and the cathode of one of the first diodes is connected to one end of m of the anode-to-energy circuits to provide electrical energy to the m of the anode-to-energy circuits. When 2≤X≤m, the xth charging circuit is connected to the anode of the xth first diode; the cathode of the xth first diode is connected to one end of one of the mx adjacent anode-to-energy circuits in the m anode-to-energy circuits, for providing electrical energy to the adjacent mx anode-to-energy circuits, where x is a positive integer, and 1≤x≤X, m1+…+mX=m.

8. A lidar, characterized in that, Includes the laser emitting circuit as described in any one of claims 1-7.

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