A method, apparatus, and medium for repairing superconducting circuits with multiple focused ion beam

Abstract

This application relates to the field of superconducting quantum computing technology, and more particularly to a method, apparatus, and medium for repairing superconducting circuits using a multi-point focused ion beam. The method involves locating the defect position of the superconducting circuit to be repaired, obtaining the defect parameters at the defect position, and then using a focused ion beam to cut a pre-set metal block to obtain a cut metal block. The cut metal block is then transferred and fixed at the defect position to obtain the repaired superconducting circuit. In this application, a focused ion beam is used to cut the metal block required for the repaired defect position in the superconducting circuit, and the cut metal block is then fitted and fixed at the defect position. This reduces the change in resistance of the repaired superconducting circuit, improves repair accuracy, and repairs the superconducting circuit, avoiding its discard and thus reducing economic costs.

Description

Technical Field

[0001] This application relates to the field of superconducting quantum computing technology, and in particular to a method, apparatus and medium for repairing superconducting circuits using a multi-point focused ion beam. Background Technology

[0002] In solid-state superconducting quantum computing schemes, superconducting quantum chips are the key core. Superconductivity refers to the phenomenon where the resistance of certain materials suddenly becomes zero at low temperatures, allowing current to flow without loss. Materials used include niobium-titanium compounds, and the performance of the chip directly affects the success of superconducting quantum computing. With the increase in the number of qubits on the chip and the increasing complexity of the circuit structure design, extremely high demands are placed on the micro- and nano-fabrication processes of superconducting quantum chips. However, structural defects that occur during various processing steps, such as clamping scratches during device transfer and defects during etching, can directly and negatively impact the chip's functionality. These defects are often on the micrometer scale, and repairing them requires sub-micrometer precision. For defects such as scratches and etching gaps, the chip often has to be discarded, significantly increasing the fabrication time and economic costs. Therefore, reducing costs during the superconducting quantum bit chip generation process has become an urgent problem to be solved. Summary of the Invention

[0003] In view of this, embodiments of this application provide a method, apparatus and medium for repairing superconducting circuits using multi-point focused ion beams, in order to solve the problem of high cost in the process of generating superconducting quantum bit chips.

[0004] In a first aspect, embodiments of this application provide a method for repairing superconducting circuits using a multi-point focused ion beam, characterized in that the method includes: Locate the defect location of the superconducting circuit to be repaired, and obtain the defect parameters at the defect location; Based on the defect parameters, a pre-defined metal block is cut and sampled using a focused ion beam to obtain a cut metal block. The cut metal block is transferred and fixed at the defect location to obtain the repaired superconducting circuit.

[0005] In a second aspect, embodiments of this application provide a computer device, the computer device including a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method described in the first aspect.

[0006] Thirdly, embodiments of this application provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the method described in the first aspect.

[0007] The advantages of this application compared to the prior art are: The process involves locating the defect position in the superconducting circuit to be repaired, obtaining the defect parameters at that position, and then using a focused ion beam to cut a pre-set metal block to prepare a sample. The cut metal block is then transferred and fixed at the defect position to obtain the repaired superconducting circuit. In this application, a focused ion beam is used to cut the metal block required to repair the defect position in the superconducting circuit. The cut metal block sample is then fitted and fixed at the defect position to reduce the change in resistance of the repaired superconducting circuit, improve repair accuracy, and repair the superconducting circuit, avoiding its discard and thus reducing economic costs. Attached Figure Description

[0008] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0009] Figure 1 This is a flowchart illustrating a method for repairing superconducting circuits using a multi-point focused ion beam, as provided in an embodiment of this application. Figure 2 This is a schematic diagram of a rough planer provided in an embodiment of this application; Figure 3 This is a schematic diagram of an undercut structure provided in an embodiment of this application; Figure 4 This is a schematic diagram of the structure of a computer device provided in one embodiment of this application. Detailed Implementation

[0010] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0011] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0012] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0013] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if detected [the described condition or event]" may be interpreted, depending on the context, as meaning "once determined," "in response to determination," "once detected [the described condition or event]," or "in response to detection [the described condition or event]."

[0014] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0015] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0016] It should be understood that the sequence number of each step in the following embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0017] To illustrate the technical solution of this application, specific embodiments are described below.

[0018] See Figure 1 This is a flowchart illustrating the method for repairing superconducting circuits using a multi-point focused ion beam, as provided in Embodiment 1 of this application. Figure 1 As shown, the method for repairing superconducting circuits using a multi-point focused ion beam may include the following steps: S101: Locate the defect location of the superconducting circuit to be repaired and obtain the defect parameters at the defect location.

[0019] In step S101, the defect location of the superconducting circuit to be repaired is located, the repair location is determined, and the defect parameters of the defect location are obtained. The defect parameters can be the length, width, and height of the defect location.

[0020] In this embodiment, the superconducting circuit to be repaired and the metal block required for repair are placed on the sample stage of a dual-beam electron microscope (DEM). The scanning electron microscope (SEM) in the DEM is used to locate the defect in the superconducting circuit to be repaired. A scanning electron microscope (SEM) is an observation method between a transmission electron microscope and an optical microscope. A scanning electron microscope can use a very narrow focused electron beam (e-beam) to scan an object. Through the interaction between the beam and the material, various physical information is excited. This physical information is collected, amplified, and re-imaged to achieve the purpose of characterizing the microscopic morphology of the material.

[0021] In this embodiment, the superconducting circuit to be repaired is placed in a dual-beam electron microscope (DEM) device, and the scanning electron microscope in the DEM device is used to scan and image the superconducting circuit to be repaired to obtain the corresponding scanned image. The scanned image is then analyzed to determine the location of the defect in the superconducting circuit to be repaired.

[0022] It should be noted that when analyzing scanned images, brightness can be used for analysis. Because the thickness of defective and non-defective locations in a superconducting circuit differs, their brightness differs after scanning with a scanning electron microscope. Therefore, the location of a defect in the superconducting circuit can be determined based on brightness. The corresponding defect parameters are then obtained based on the defect location. When obtaining these parameters, the thickness of the defect parameter is determined by the magnitude of the brightness difference between the defective and non-defective locations. If the brightness difference is large, the defect is considered to have a large height (i.e., a large thickness); conversely, if the brightness difference is small, the defect is considered to have a small height (i.e., a small thickness). The length and width of the defect parameter are determined based on the area of ​​the defect location in the superconducting circuit.

[0023] In this embodiment, the defect location of the superconducting circuit to be repaired is located, and the defect parameters of the defect location are obtained so as to determine the shape of the metal sample required to repair the superconducting circuit based on the corresponding defect parameters.

[0024] S102: Based on the defect parameters, a focused ion beam is used to cut and prepare a sample of the pre-set metal block to obtain the cut metal block.

[0025] In step S102, based on the defect parameters, a focused ion beam is used to cut and prepare a sample of a preset metal block, so that the shape and size of the cut metal block are equal to the shape and size of the defect location of the superconducting circuit to be repaired.

[0026] In this embodiment, the scanning electron microscope and the focused ion microscope in the dual-beam electron microscope equipment are mounted simultaneously on a single device at a certain angle. The sample stage is adjusted to a preset height, and by rotating the sample stage, the surface of the superconducting circuit and metal block to be repaired can be made perpendicular to the electron beam or ion beam. This ultimately achieves the effect of real-time observation of the electron beam and cutting of the ion beam. When the sample stage is not rotated, the electron beam is perpendicular to the sample stage, and the ion beam forms a certain angle with the sample stage.

[0027] It should be noted that the ion beam in the focusing ion microscope of the dual-beam electron microscope equipment can be gallium ions. Gallium ions are easy to obtain high-density beam currents and can etch most materials. The gallium ion beam is focused onto the metal block through an electrostatic lens and scanned, interacting with the metal block and collecting various signals generated, thereby realizing fine processing and microscopic analysis of the metal block. However, the ion beam in the focusing ion microscope can also be other ions, which is not limited in this application.

[0028] In this embodiment, after locating the defect position of the superconducting circuit to be repaired and obtaining the defect parameters, a pre-set metal block is cut and prepared using a focused ion beam according to the defect parameters. The pre-set metal block can be prepared by adjusting the angle between the sample stage and the focused ion beam and electron beam during the cutting process, allowing the focused ion beam to better cut the pre-set metal block. The pre-set metal block can be an aluminum block, or other metal blocks; this application does not limit the specific metal block used.

[0029] Optionally, based on the defect parameters, a focused ion beam is used to cut a preset metal block to obtain a cut metal block, including: A cutting area is selected in the preset metal block, and the surface oxide layer of the cutting area is removed by a focused ion beam to obtain the oxide layer removed area. Platinum plating is performed on the area where the oxide layer has been removed to obtain a platinum-plated area. Based on the defect parameters, a focused ion beam is used to cut the platinum-plated area to obtain a cut metal block.

[0030] In this embodiment, when cutting a preset metal block to prepare a sample, in order to obtain a pure metal block, the oxide layer on the surface of the preset metal block is removed. A cutting area is selected on the preset metal block, and the oxide layer on the surface of the cutting area is removed using a focused ion beam to obtain an oxide-removed area. The selected cutting area can be any area in the preset metal block. When removing the oxide layer on the surface of the cutting area using a focused ion beam, the corresponding operating parameters are selected in the operating instrument of the dual-beam electron microscope. The operating parameters can include the voltage and current when cutting with a focused ion beam, as well as the depth of the oxide layer to be removed.

[0031] It should be noted that when using a focused ion beam to remove the surface oxide layer of the cut area, the sample stage in the dual-beam electron microscope is rotated 55 degrees so that the focused ion beam is perpendicular to the sample stage and the electron beam is at a certain angle to the sample stage. When the focused ion beam is perpendicular to the sample stage, it can be directed vertically onto the surface of the preset metal block, thereby removing the surface oxide layer of the preset metal block and obtaining the oxide-removed area.

[0032] In this embodiment, platinum plating is performed on the area where the oxide layer is removed to obtain a platinum-plated area. During the platinum plating process, platinum plating can be performed according to a preset thickness to form a protective film on the preset area where the oxide layer is removed from the metal block, preventing the focused ion beam from damaging the surface of the metal block.

[0033] In this embodiment, a focused ion beam is used to cut and prepare a sample of the platinum-plated area based on the defect parameters, resulting in a cut metal block. Cutting according to the defect parameters ensures that the size and shape of the cut metal block are equal to the defect location of the superconducting circuit to be repaired.

[0034] In this embodiment, the oxide layer is removed from the area of ​​the pre-defined metal block to be cut in order to obtain a pure metal block. After removing the oxide layer, the area is platinum-plated to form a protective layer for the area to be cut, preventing damage to the surface of the metal block. According to the defect parameters, a focused ion beam is used to cut the platinum-plated area to obtain a cut metal block. This allows the cut metal block to be used to repair the defect location of the superconducting circuit to be repaired, improving the repair accuracy.

[0035] Optionally, a cutting area is selected in a preset metal block, and a focused ion beam is used to remove the surface oxide layer of the cutting area to obtain an oxide-removed area, including: A focused ion beam with a voltage of 30 kV and a current of 500 pA is used to remove the surface oxide layer of the cutting area at a depth of 10 nm to 30 nm, thus obtaining the oxide-removed area.

[0036] In this embodiment, the voltage of the focused ion beam is adjusted to 30kV and the current is adjusted to 500pA to remove the surface oxide layer of the cutting area. The removal depth of the surface oxide layer is 10nm to 30nm to ensure that the surface oxide layer of the cutting area can be completely removed.

[0037] Optionally, platinum plating is performed on the area where the oxide layer has been removed to obtain a platinum-plated area, including: A focused ion beam with a voltage of 30 kV and a current of 250 pA was used to plate the area where the oxide layer was removed with platinum to obtain the platinum-plated area.

[0038] In this embodiment, the voltage of the focused ion beam is adjusted to 30kV and the current is adjusted to 250pA to perform platinum plating on the oxide layer removal area. When performing platinum plating, a rectangular solid frame is selected, and the platinum plating area can be adjusted according to actual needs. The nano probe is inserted into the oxide layer removal area, and the nano needle carries platinum material. Platinum material is placed into the oxide layer removal area to obtain the platinum plating area.

[0039] Optionally, based on the defect parameters, a focused ion beam is used to cut the platinum-plated area to obtain a cut metal block, including: The platinum-plated area was rough-cut using a focused ion beam with a voltage of 30 kV and a current of 10 nA to obtain the rough-cut area. A focused ion beam with a voltage of 30 kV and a current of 5 nA is used to perform fine planing on the rough planed area to obtain the fine planed area. After setting the rotation angle of the sample stage of the dual-beam electron microscope to zero degrees, the finely planed area is cut and sampled using a focused ion beam to obtain a cut metal block.

[0040] In this embodiment, after platinum plating is applied to the area where the oxide layer is removed, a focused ion beam is used to cut and prepare a sample of the platinum plating area. A focused ion beam with a voltage of 30kV and a current of 10nA is used to rough plan the platinum plating area to obtain the rough planed area. During rough planing, the corresponding rough planing range is selected in the platinum plating area, and polishing is performed in the corresponding rough planing range. During polishing, the parallel command can be selected for polishing.

[0041] It should be noted that when using a focused ion beam to rough-polish the platinum-plated area, the sample stage in the dual-beam electron microscope should be rotated 55 degrees so that the focused ion beam is perpendicular to the sample stage, and the electron beam is at a certain angle to the sample stage. When the focused ion beam is perpendicular to the sample stage, it can be directed vertically onto the platinum-plated area for polishing. See also Figure 2This is a schematic diagram of a rough planing structure provided in an embodiment of this application. Wherein, FIB is a focused ion beam, SEM is an electron beam, Trench depth is the groove depth of the sample stage in the dual-beam electron microscope, Trench height is the groove height of the sample stage in the dual-beam electron microscope, Stage tilt is the rotation angle of the sample stage in the dual-beam electron microscope, and Side A and Side B are the two sides of the metal block, respectively.

[0042] After rough planing, a focused ion beam with a voltage of 30kV and a current of 5nA is used to plan the rough planed area to obtain a fine planed area. During fine planing, a fine planed area is selected in the rough planed area, and the corresponding fine planed area is polished. During polishing, the parallel command can be selected for polishing.

[0043] It should be noted that when using a focused ion beam to perform fine planing on the rough-planed area, the sample stage in the dual-beam electron microscope is rotated 55 degrees so that the focused ion beam is perpendicular to the sample stage and the electron beam is at a certain angle to the sample stage. When the focused ion beam is perpendicular to the sample stage, it can be directed vertically onto the rough-planed area, and the rough-planed area can be polished to obtain the fine-planed area.

[0044] After fine planing the platinum-plated area, a pre-defined metal block is undercut using a focused ion beam. During undercutting, the rotation angle of the dual-beam electron microscope's stage is set to zero degrees, ensuring the electron beam is perpendicular to the planed area for easy observation using a scanning electron microscope. The focused ion beam is at a certain angle to the stage, using either a 30 kV, 5 nA or 30 kV, 3 nA focused ion beam for undercutting. During undercutting, the cut area is observed using a scanning electron microscope to determine if the pre-defined metal block has been cut. If the pre-defined metal block has been cut, the process ends. If the pre-defined metal block has not been cut, the dual-beam electron microscope's stage is rotated to a rotation angle of 55 degrees, and the planed area is finely planed again until clear cut marks are visible under a scanning electron microscope. See also Figure 3 This is a schematic diagram of an undercut structure provided in an embodiment of this application, wherein FIB is a focused ion beam, SEM is an electron beam, Trench depth is the groove depth of the sample stage in the dual-beam electron microscope equipment, Trench height is the groove height of the sample stage in the dual-beam electron microscope equipment, Stage tilt is the rotation angle of the sample stage in the dual-beam electron microscope equipment, and Side A and Side B are the two sides of the metal block, respectively.

[0045] S103: Transfer and fix the cut metal block at the defect location to obtain the repaired superconducting circuit.

[0046] In step S103, the cut metal block is used to repair the defect location of the superconducting circuit to be repaired. During the repair, the corresponding defect area is filled with the defect location of the superconducting circuit to be repaired to obtain the repaired superconducting circuit.

[0047] In this embodiment, the cut metal block is transferred and fixed at the defect location to obtain the repaired superconducting circuit. When transferring the cut metal block, nanoneedles are used to transfer the cut metal block to the defect location. The cut metal block is fixed at the defect location by platinum plating. After fixing, the repaired superconducting circuit is obtained.

[0048] Optionally, before transferring and fixing the cut metal block at the defect location to obtain the repaired superconducting circuit, the process also includes: After rotating the sample stage of the dual-beam electron microscope by 180 degrees, the nanoneedles are controlled to contact the platinum-plated end of the cut metal block. The position between the nanoneedles and the platinum-plated end is observed using an electron microscope and an ion beam to control the contact between the nanoneedles and the platinum-plated end. With a depth parameter of 1μm to 5μm, the nanoneedles carrying platinum material are controlled to penetrate the platinum-plated end from the contact position with the platinum-plated end to perform platinum plating. The platinum plating at the contact position is observed using a scanning electron microscope. If platinum plating is observed to be successful, the other end of the cut metal block is cut using a focused ion beam. The nanoneedles are controlled to move so that the cut metal block separates from the metal block.

[0049] In this embodiment, before transferring and fixing the cut metal block at the defect location to obtain the repaired superconducting circuit, the cut metal block needs to be extracted from the preset metal block. When extracting the cut metal block, the sample stage of the dual-beam electron microscope is rotated 180 degrees to control the nanoneedle to contact the platinum-plated end of the cut metal block. The position between the nanoneedle and the platinum-plated end is observed using a scanning electron microscope and an ion beam to control the contact between the nanoneedle and the platinum-plated end.

[0050] It should be noted that when the nanoneedle comes into contact with the platinum-plated end of the cut metal block, the speed of the nanoneedle is slowed down until it contacts the platinum-plated end and stops extending.

[0051] In this embodiment, with a depth parameter of 3 μm, the nanoneedle carrying platinum material is controlled to penetrate the platinum-plating end from the contact position. The platinum plating at the contact position is observed using a scanning electron microscope. If successful plating is observed, a focused ion beam is used to cut the other end of the pre-cut metal block, and the nanoneedle is controlled to move, causing the cut metal block to detach from the metal block. Specifically, a focused ion beam with a current of 10 nA is used to cut the other end of the metal block.

[0052] Optionally, the cut metal block is transferred and fixed at the defect location to obtain the repaired superconducting circuit, including: After rotating the sample stage of the dual-beam electron microscope by 35 degrees, the nanoneedles are controlled to contact the platinum-plated end of the cut metal block. The cut metal block is then transferred and fixed at the defect location. The position between the nanoneedles and the platinum-plated end is observed using a scanning electron microscope and an ion beam to control the contact between the nanoneedles and the platinum-plated end. Nanoneedles carrying platinum material are controlled to penetrate the platinum-plated end at the contact point to perform platinum plating. The platinum plating at the contact point is observed using a scanning electron microscope. If successful platinum plating is observed, platinum plating at the contact point is stopped, and the repaired superconducting circuit is obtained.

[0053] In this embodiment, when repairing the defect location, a scanning electron microscope is used to observe the repair location. The sample stage of the dual-beam electron microscope is rotated 35 degrees, and the nanoneedle is brought into contact with the platinum-plated end of the cut metal block. The position between the nanoneedle and the platinum-plated end is observed using a scanning electron microscope and an ion beam to ensure that the cut metal block is in complete contact and fits the defect location. To determine whether the cut metal block is in complete contact and fits the defect location, it can be judged by observing whether the cut metal block has moved in the image of the focused ion beam imaging. If the cut metal block has not moved, it is considered that the cut metal block is in complete contact and fits the defect location.

[0054] After the cut metal block is fully in contact with and adheres to the defect location, the nanoneedles are controlled to carry platinum material and probe into the platinum-plated end from the contact position to perform platinum plating. The platinum plating at the contact position is observed using a scanning electron microscope. If successful platinum plating is observed, the platinum plating at the contact position is stopped, and the repaired superconducting circuit is obtained.

[0055] Optionally, after transferring and fixing the cut metal block at the defect location to obtain the repaired superconducting circuit, the process further includes: The repaired superconducting circuit was scanned using a scanning electron microscope to obtain a scanned image of the repaired circuit. Brightness detection is performed on the repaired scan image. If the brightness of the defect location of the repaired superconducting circuit is equal to the brightness of the non-defect location of the repaired superconducting circuit, then the repair of the superconducting circuit is determined to be successful.

[0056] In this embodiment, the cut metal block is transferred and fixed at the defect location to obtain the repaired superconducting circuit. The repaired superconducting circuit is then inspected to ensure that its resistance is not affected. During inspection, the repaired superconducting circuit is examined using a scanning electron microscope (SEM) image. If the brightness of the defect location is equal to the brightness of the non-defect location, the repair is considered successful. Otherwise, the repair is considered unsuccessful.

[0057] It should be noted that when testing the repaired superconducting circuit, the automatic stepping mode is used to automatically detect whether the repair of the superconducting circuit was successful.

[0058] The process involves locating the defect position in the superconducting circuit to be repaired, obtaining the defect parameters at that position, and then using a focused ion beam to cut a pre-set metal block to prepare a sample. The cut metal block is then transferred and fixed at the defect position to obtain the repaired superconducting circuit. In this application, a focused ion beam is used to cut the metal block required to repair the defect position in the superconducting circuit. The cut metal block sample is then fitted and fixed at the defect position to reduce the change in resistance of the repaired superconducting circuit, improve repair accuracy, and repair the superconducting circuit, avoiding its discard and thus reducing economic costs.

[0059] Figure 4 This is a schematic diagram of the structure of a computer device provided in an embodiment of this application. Figure 4 As shown, the computer device of this embodiment includes: at least one processor ( Figure 4 Only one is shown in the diagram), a memory, and a computer program stored in the memory and executable on at least one processor, wherein the processor executes the computer program to implement the steps in any of the above-described methods for repairing superconducting circuits using multi-point focused ion beams.

[0060] This computer device may include, but is not limited to, a processor and memory. Those skilled in the art will understand that... Figure 4 The examples of computer devices are merely examples and do not constitute a limitation on computer devices. Computer devices may include more or fewer components than shown, or combinations of certain components, or different components.

[0061] The processor referred to can be a CPU, but it can also be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor.

[0062] Memory includes readable storage media, internal memory, etc., wherein internal memory can be the RAM of a computer device, providing an environment for the operation of the operating system and computer-readable instructions stored in the readable storage media. The readable storage media can be the hard drive of a computer device, or in other embodiments, it can be an external storage device of the computer device, such as a plug-in hard drive, Smart Media Card (SMC), Secure Digital (SD) card, or Flash Card. Furthermore, memory can include both internal storage units and external storage devices of the computer device. Memory is used to store the operating system, applications, bootloader, data, and other programs, such as program code for computer programs. Memory can also be used to temporarily store data that has been output or will be output.

[0063] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is used as an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above device can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here. If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments of this application can be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the above method embodiments. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. A computer-readable medium can include at least: any entity or device capable of carrying computer program code, a recording medium, a computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media. Examples include USB flash drives, portable hard drives, magnetic disks, or optical disks. In some jurisdictions, according to legislation and patent practice, computer-readable media cannot be electrical carrier signals or telecommunication signals.

[0064] The implementation of all or part of the processes in the methods of the above embodiments can also be accomplished by a computer program product. When the computer program product is run on a computer device, it enables the computer device to execute the steps in the above method embodiments.

[0065] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0066] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0067] In the embodiments provided in this application, it should be understood that the disclosed apparatus / computer devices and methods can be implemented in other ways. For example, the apparatus / computer device embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0068] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0069] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A method for repairing superconducting circuits using a multi-point focused ion beam, characterized in that, The method includes: Locate the defect location of the superconducting circuit to be repaired, and obtain the defect parameters at the defect location; Based on the defect parameters, a pre-defined metal block is cut and sampled using a focused ion beam to obtain a cut metal block; the step of cutting and sampled the pre-defined metal block using a focused ion beam based on the defect parameters to obtain a cut metal block includes: A cutting area is selected in the preset metal block, and the surface oxide layer of the cutting area is removed by the focused ion beam to obtain the oxide layer removed area; wherein, when the surface oxide layer of the cutting area is removed by the focused ion beam, the sample stage in the dual-beam electron microscope is rotated by 55 degrees so that the focused ion beam is perpendicular to the sample stage and the electron beam is at a certain angle to the sample stage. Platinum plating is performed on the area where the oxide layer has been removed to obtain a platinum-plated area. Based on the defect parameters, the platinum-plated area is cut and sampled using the focused ion beam to obtain a cut metal block. The cut metal block is transferred and fixed at the defect location to obtain the repaired superconducting circuit.

2. The method as described in claim 1, characterized in that, After transferring and fixing the cut metal block at the defect location to obtain the repaired superconducting circuit, the process further includes: The repaired superconducting circuit was scanned using a scanning electron microscope to obtain a scanned image of the repaired circuit. Brightness detection is performed on the repaired scan image. If the brightness of the defect location of the repaired superconducting circuit is equal to the brightness of the non-defect location of the repaired superconducting circuit, then the repaired superconducting circuit is determined to be successfully repaired.

3. The method as described in claim 1, characterized in that, The process involves selecting a cutting area on a preset metal block and using the focused ion beam to remove the surface oxide layer of the cutting area, resulting in an oxide-removed area, including: A focused ion beam with a voltage of 30 kV and a current of 500 pA is used to remove the surface oxide layer of the cutting area at a depth of 10 nm to 30 nm, thereby obtaining an oxide-removed area.

4. The method as described in claim 1, characterized in that, The process of plating platinum onto the de-oxidized area to obtain a platinum-plated area includes: The region where the oxide layer was removed was platinum-plated using a focused ion beam with a voltage of 30 kV and a current of 250 pA to obtain a platinum-plated region.

5. The method as described in claim 1, characterized in that, The step of cutting and preparing a sample from the platinum-plated area using the focused ion beam based on the defect parameters to obtain a cut metal block includes: The platinum-plated area was rough-planed using a focused ion beam with a voltage of 30 kV and a current of 10 nA to obtain the rough-planed area. The rough-planed area is fine-planed using a focused ion beam with a voltage of 30 kV and a current of 5 nA to obtain a fine-planed area. After setting the rotation angle of the sample stage of the dual-beam electron microscope to zero degrees, the focused ion beam is used to cut the finely planed area to obtain a cut metal block.

6. The method as described in claim 1, characterized in that, Before transferring and fixing the cut metal block at the defect location to obtain the repaired superconducting circuit, the method further includes: After rotating the sample stage of the dual-beam electron microscope by 180 degrees, the nanoneedles are controlled to contact the platinum-plated end of the cut metal block. The position between the nanoneedles and the platinum-plated end is observed using a scanning electron microscope and an ion beam to control the contact between the nanoneedles and the platinum-plated end. With a depth parameter of 1μm to 5μm, the nanoneedle carrying platinum material is controlled to penetrate the platinum-plated end from the contact position with the platinum-plated end to perform platinum plating. The platinum plating at the contact position is observed using the scanning electron microscope. If platinum plating is observed to be successful, the other end of the cut metal block is cut using the focused ion beam. The nanoneedle is controlled to move so that the cut metal block is separated from the metal block.

7. The method as described in claim 6, characterized in that, The step of transferring and fixing the cut metal block at the defect location to obtain the repaired superconducting circuit includes: After rotating the sample stage of the dual-beam electron microscope by 35 degrees, the nanoneedle is controlled to contact the platinum-plated end of the cut metal block, and the cut metal block is transferred and fixed at the defect position. The position between the nanoneedle and the platinum-plated end is observed using the scanning electron microscope and the ion beam to control the contact between the nanoneedle and the platinum-plated end. The nanoneedles are controlled to carry platinum material and penetrate the platinum-plated end from the contact position to perform platinum plating. The platinum plating at the contact position is observed using a scanning electron microscope. If successful platinum plating is observed, the platinum plating at the contact position is stopped, and the repaired superconducting circuit is obtained.

8. A computer device, characterized in that, The computer device includes a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method for repairing superconducting circuits using a multi-point focused ion beam as described in claims 1 to 7.

9. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the method for repairing superconducting circuits using multi-point focused ion beams as described in claims 1 to 7.

Images