A gas uniformizing device, a semiconductor deposition apparatus, and a deposition method thereof

Abstract

The application discloses a kind of uniform gas device, semiconductor deposition equipment and its deposition method.The uniform gas device includes: first disc structure, including first gas disc, its gas inlet end is connected to top plate, the gap between the outside of first gas disc and top plate constitutes first channel, for transmitting protective gas, the inside of first gas disc includes second channel, for transmitting process gas, process gas is output to second gas disc via the first gas outlet end of first gas disc, and is output via the gas outlet end of third channel in second gas disc, while protective gas is output from the second gas outlet end of first gas disc around the outer ring of process gas;Second disc structure is located at the gas outlet end of second gas disc, its inside includes fourth channel, for transmitting process gas;And several piezoelectric valves are set between third channel and fourth channel, for independently adjusting the size of each fourth channel gas inlet.The application can make process gas uniformly distributed in the middle area of shower tray, improve the consistency of coating.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor processing, specifically to a gas equalization device, a semiconductor deposition apparatus, a semiconductor deposition method, and a computer-readable storage medium. Background Technology

[0002] With the continuous advancement of semiconductor coating technology, strict requirements are placed on the uniformity of coating thickness during semiconductor coating processes. Therefore, the difference between the two reaction chambers cannot be too large. However, in actual processes, the flow of process gases in different reaction chambers is complex and variable. Simply achieving physical uniformity among the components within the reaction chambers often fails to fully meet the process requirements, especially in the spray section within the reaction chamber, where the uniformity of the process gases through the spray plate directly determines the coating quality.

[0003] In existing technologies, the positions of the process gas outlets in the spray plate are fixed, making it impossible to individually adjust the flow rate of the process gas exiting from these outlets. Multiple trials and modifications are typically required to meet actual airflow demands. Furthermore, the process gas tends to diffuse throughout the reaction chamber, failing to concentrate on the wafer surface in the central region for efficient deposition. Consequently, flow rates of the process gas vary across different areas of the reaction chamber, leading to inconsistent film thickness and poor uniformity.

[0004] To address the aforementioned problems in the existing technology, there is an urgent need in the field for a gas homogenization technology that can adjust the uniformity of the process gas before it enters the spray plate and distribute it evenly in the middle area of ​​the spray plate. This allows the gas to concentrate on the wafer surface in the central area after entering the reaction chamber, which is beneficial for controlling the film thickness, achieving coating consistency, improving equipment applicability, and shortening the development cycle. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a gas homogenizing device, a semiconductor process equipment, a semiconductor process method, and a computer-readable storage medium, which can adjust the uniformity of the process gas before it enters the spray plate and distribute it evenly in the middle region of the spray plate. This allows the gas to concentrate on the wafer surface in the central region after entering the reaction chamber, which is beneficial for controlling the film thickness, achieving coating consistency, improving equipment applicability, and shortening the development cycle.

[0007] Specifically, the gas equalization device provided according to the first aspect of the present invention includes: a first disc structure including a first gas disc, the gas inlet end of which is connected to a top plate, the gap between the outer side of the first gas disc and the top plate forming a first channel for transmitting protective gas, the interior of the first gas disc including a second channel for transmitting process gas, the process gas being output to the second gas disc via a first gas outlet end of the first gas disc and output via a gas outlet end of a third channel in the second gas disc, while the protective gas is output from a second gas outlet end of the first gas disc surrounding the process gas; a second disc structure located at the gas outlet end of the second gas disc, the interior of which includes a third channel for transmitting the process gas; and a plurality of piezoelectric valves disposed between the third channel and the fourth channel for independently adjusting the size of the gas inlet of each of the fourth channels.

[0008] Furthermore, in some embodiments of the present invention, the opening degree between the piezoelectric valve and the air inlet of the fourth channel is inversely proportional to the voltage applied to the piezoelectric valve.

[0009] Furthermore, in some embodiments of the present invention, the piezoelectric valve comprises multiple sets of piezoelectric ceramics connected in series to form a piezoelectric ceramic assembly, with the two ends along the series connection direction of the piezoelectric ceramic assembly being a positive input terminal and a negative output terminal, respectively, and the extension deformation of the piezoelectric ceramic assembly after being energized is proportional to the voltage value applied to it.

[0010] Furthermore, in some embodiments of the present invention, the piezoelectric ceramic assembly extends longitudinally when energized, approaching the air inlet of the fourth channel to reduce the opening between the piezoelectric valve and the air inlet; and when de-energized, the piezoelectric ceramic assembly retracts longitudinally, moving away from the air inlet of the fourth channel to increase the opening between the piezoelectric valve and the air inlet.

[0011] Furthermore, in some embodiments of the present invention, the piezoelectric ceramic assembly is embedded in the third channel, and the piezoelectric valve further includes a spring plate and a valve core. The valve core is located at the bottom end of the piezoelectric ceramic assembly, and the spring plate connects the piezoelectric ceramic assembly and the valve core to provide elastic pressure to seal the piezoelectric ceramic assembly in the third channel when it is not energized.

[0012] Furthermore, in some embodiments of the present invention, the valve core has a ball head structure and is in line contact with the air inlet of the fourth channel below it when energized for sealing.

[0013] Furthermore, in some embodiments of the present invention, the end of the spring sheet extends radially outward to abut against the inner wall of the third channel, so that the spring sheet isolates the piezoelectric ceramic assembly and the air inlet of the fourth channel when not energized.

[0014] Furthermore, in some embodiments of the present invention, the end of the spring sheet is inclined downward so that the spring sheet is disposed in an umbrella shape between the piezoelectric ceramic assembly and the valve core.

[0015] Furthermore, in some embodiments of the present invention, the central region of the first gas disk includes a first gas distribution channel located in the inner circle for transmitting a first process gas, and the outer circle located in the central region also includes a second gas distribution channel for transmitting a second process gas.

[0016] Furthermore, in some embodiments of the present invention, the second gas plate is located at the outlet end of the first gas distribution channel, and each of the piezoelectric valves is used to individually adjust the flow rate of the first process gas output.

[0017] Furthermore, in some embodiments of the present invention, the second gas distribution channel in the first gas plate includes a plurality of gas outlet valves for uniformly adjusting the flow rate of the output second process gas.

[0018] Furthermore, the semiconductor deposition apparatus provided according to the second aspect of the present invention includes: a reaction chamber in which a wafer is placed for a thin film deposition process; a spray plate located above the reaction chamber, the spray plate including multiple gas outlet channels for introducing protective gas and process gas required for the thin film deposition process into the reaction chamber; and the gas equalization device provided in the first aspect of the present invention, disposed above the spray plate, for causing the protective gas to surround the outer ring of the process gas and for causing the process gas to be uniformly distributed on the spray plate.

[0019] Furthermore, according to a third aspect of the present invention, a semiconductor deposition method is also provided, comprising the following steps: placing a wafer into the reaction chamber of the semiconductor deposition apparatus provided in the second aspect of the present invention; introducing process gas and protective gas into the reaction chamber via a gas equalization device and a spray plate in the semiconductor deposition apparatus, so that the process gas is concentrated on the wafer surface for thin film deposition; in response to the completion of the thin film deposition, removing the wafer and detecting the uniformity of the film thickness on the wafer surface; and in response to the non-compliance of the uniformity of the film thickness on the wafer surface, independently adjusting the size of a plurality of piezoelectric valves and the air inlet of each fourth channel in the gas equalization device above the corresponding region according to the film thickness of each region, and placing the wafer back into the reaction chamber for gas deposition.

[0020] Furthermore, in some embodiments of the present invention, the step of responding to the non-uniformity of the film thickness on the wafer surface, independently adjusting the size of the inlet of a plurality of piezoelectric valves in the gas equalization device above the corresponding region and the size of the inlet of each fourth channel according to the film thickness of each region, and then placing the wafer back into the reaction chamber for gas-assisted coating includes: adjusting the voltage value applied to each piezoelectric valve above the corresponding region individually according to the film thickness of each region, so as to adjust the opening between the piezoelectric valve and the inlet of the fourth channel, wherein the opening between the piezoelectric valve and the inlet of the fourth channel is inversely proportional to the voltage value applied to the piezoelectric valve; and, in response to adjusting the opening between the piezoelectric valve and the inlet of the fourth channel, placing the wafer back into the reaction chamber for gas-assisted coating.

[0021] Furthermore, in some embodiments of the present invention, the deposition method further includes the following steps: in response to the uniformity of the film thickness on the wafer surface being qualified, determining the size of the inlet of each piezoelectric valve and each fourth channel in the gas equalization device, and determining the opening between each piezoelectric valve and the inlet of the fourth channel, and performing the thin film deposition process on the next wafer.

[0022] Furthermore, according to a fourth aspect of the present invention, a computer-readable storage medium is provided on which computer instructions are stored. When the computer instructions are executed by a processor, the semiconductor deposition method described above, as provided in the third aspect of the present invention, is implemented. Attached Figure Description

[0023] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0024] Figure 1A top view of a gas equalization device provided according to some embodiments of the present invention is shown;

[0025] Figure 2 for Figure 1 A cross-sectional view of the gas equalization device along the AE-AE direction;

[0026] Figure 3 A cross-sectional view along the AN-AN direction is shown of the second gas disk and the structure of the second disk in the gas equalization device.

[0027] Figure 4 A schematic diagram of the structure of a piezoelectric valve in a second air disc according to some embodiments of the present invention is shown;

[0028] Figure 5 A bottom view of the second air disc of the gas equalization device provided according to some embodiments of the present invention is shown;

[0029] Figure 6 A bottom view of the second disc structure in the gas equalization device is shown.

[0030] Figure 7 A side view of a gas equalization device according to other embodiments of the present invention is shown.

[0031] Figure 8 A top view of a gas equalization device according to other embodiments of the present invention is shown;

[0032] Figure 9 for Figure 8 A cross-sectional view of the gas equalization device along the AK-AK direction;

[0033] Figure 10 for Figure 9 A bottom view of the structure of the gas equalization device (excluding the second disc structure);

[0034] Figure 11 for Figure 8 A cross-sectional view of the gas equalization device along the AL-AL direction; and

[0035] Figure 12 A flowchart of a semiconductor manufacturing process provided according to some embodiments of the present invention is shown.

[0036] Figure label:

[0037] 100 Gas equalization device;

[0038] 110 First air plate;

[0039] 111 Second Channel;

[0040] 112 Air outlet valve;

[0041] 120 Second air plate;

[0042] 121 Third Channel;

[0043] 122 Regular Channel;

[0044] 123 Bolt connection hole;

[0045] 130mm top plate;

[0046] 131 First Passage;

[0047] 140 Second plate structure;

[0048] 141 Fourth Channel;

[0049] 142 Air intake;

[0050] 150 intake flange;

[0051] 151 First intake pipe;

[0052] 152 Second intake pipe;

[0053] 153 Third intake pipe;

[0054] 160 piezoelectric valve;

[0055] 161 Piezoelectric ceramic assembly;

[0056] 162 Spring sheet;

[0057] 163 Valve core;

[0058] 171 First air distribution channel;

[0059] 172 Second air distribution channel;

[0060] 180 spray tray;

[0061] 181 Vent passage;

[0062] I. First air outlet;

[0063] II. Second air outlet; and

[0064] Steps S1210 to S1240. Detailed Implementation

[0065] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0066] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0067] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0068] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0069] As mentioned above, in existing technologies, the position of the process gas outlet in the spray plate is fixed. Therefore, the flow rate of the process gas flowing out of the outlet cannot be individually adjusted. Multiple trials and modifications are usually required to meet actual airflow requirements. Furthermore, the process gas tends to diffuse after entering the reaction chamber, failing to concentrate on the wafer surface in the central region of the chamber for efficient coating. Consequently, the flow rate of the process gas in different areas of the reaction chamber is prone to deviation, leading to inconsistent film thickness and poor uniformity.

[0070] To address the aforementioned problems in the prior art, this invention provides a gas homogenizing device, a semiconductor process equipment, a semiconductor process method, and a computer-readable storage medium. These devices can pre-adjust the uniformity of the process gas before it enters the spray plate and distribute it evenly in the central region of the spray plate. This allows the gas to concentrate on the wafer surface in the central region after entering the reaction chamber, which is beneficial for controlling film thickness, achieving coating consistency, improving equipment applicability, and shortening the development cycle.

[0071] In some non-limiting embodiments, the gas equalization device provided in the first aspect of the present invention can be configured in the semiconductor deposition apparatus provided in the second aspect of the present invention, and can be used to implement the semiconductor deposition method provided in the third aspect of the present invention.

[0072] Specifically, in some non-limiting embodiments, the fourth aspect of the present invention provides a computer-readable storage medium on which computer instructions can be stored. When the computer instructions are executed by a processor, they can be used to implement the semiconductor deposition method described above in the third aspect of the present invention.

[0073] The working principle of the above-described gas equalization device will be described below with reference to some embodiments of semiconductor deposition apparatuses and deposition methods. Those skilled in the art will understand that these embodiments of semiconductor deposition apparatuses and deposition methods are merely non-limiting implementations provided by the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all operating methods or functions of the gas equalization device. Similarly, this gas equalization device is also only one non-limiting implementation provided by the present invention, and does not limit other configurations in these semiconductor deposition apparatuses, or the entities implementing the steps in the semiconductor deposition methods.

[0074] First, in some embodiments of the present invention, semiconductor deposition may include a reaction chamber in which a wafer may be placed for thin film deposition; a spray plate, which may be located above the reaction chamber, and includes multiple gas outlet channels for introducing protective gas and process gas required for the thin film deposition process into the reaction chamber; and a gas equalization device, which may be disposed above the spray plate for making the protective gas surround the outer ring of the process gas and making the process gas uniformly distributed on the spray plate.

[0075] Specifically, please refer to the following: Figure 1 and Figure 2 , Figure 1 The diagram shows a top view of a gas equalization device according to some embodiments of the present invention. Figure 2 for Figure 1A cross-sectional view of the gas equalization device along the AE-AE direction.

[0076] like Figure 1 and Figure 2 As shown, in some embodiments of the present invention, the gas equalization device 100 may include a first disc structure, a second disc structure, and a plurality of piezoelectric valves. For example... Figure 2 As shown, the air inlet end of the first air plate 110 can be connected to the top plate 130. The lower surface of the top plate 130 can be screwed to the upper surface of the first air plate 110. An air inlet flange 150 can be screwed to the upper surface of the top plate 130. The air inlet flange 150 can form a sealed, detachable connection with the first air inlet pipe 151 and the second air inlet pipe 152. The first air inlet pipe 151 can be connected to a process gas source for introducing process gas. The second air inlet pipe 152 can be connected to a protective gas source for introducing protective gas.

[0077] Furthermore, there is a gap between the inner wall of the top plate 130 and the outer side of the first gas plate 110 to form an annular first channel 131 for transmitting protective gas, so that the protective gas can be output through the annular second outlet II below the first channel 131.

[0078] Continue as Figure 2 As shown, the interior of the first gas disk 110 may include a second channel 111 for transmitting process gas. Specifically, the process gas can be output via the first outlet I in the central region of the first gas disk 110 (the transmission path of the process gas can be as follows). Figure 2 (As shown by the single dashed arrow in the image) to the second gas plate 120. The interior of the second gas plate 120 includes a third channel 121, through which process gas can be output, while protective gas can be output from the second outlet II in the edge region of the first gas plate 110, surrounding the process gas (the transmission path of the protective gas can be as follows). Figure 2 (As shown by the multiple solid arrows in the image).

[0079] like Figure 2 As shown, the protective gas enters the gas equalization device 100 through the second inlet pipe 152 connected to the protective gas source, then enters the annular first channel 131 and is evenly dispersed in all directions, and is output through the annular outlet located at the gas outlet end of the first gas plate 110. In this embodiment, the first channel 131 for transmitting the protective gas, formed by the inner wall of the top plate 130 and the outer wall of the first gas plate 110, can form a gas protection structure. This not only allows the protective gas to protect the edge of the first gas plate 110 from contamination, thereby improving its service life, but also, by setting the first channel 131 at the edge of the gas equalization device 100, it can prevent mechanical particles from being introduced into the front end of the equipment from falling onto the wafer surface in the middle of the reaction chamber, thus avoiding the risk of affecting the subsequent coating effect.

[0080] Furthermore, such as Figure 2 As shown, the protective gas in the gas distribution device 100 (indicated by multiple solid arrows) can also form a protective gas layer around the process gas (indicated by a single dashed arrow). When a coating deposition process is required on a smaller wafer, for example, when the wafer size changes from 12 inches to 8 inches, the flow rate of the protective gas can be increased to concentrate the process gas in the inner ring more in the central region corresponding to the wafer size, thereby meeting the size requirements of the coating and improving the coating quality.

[0081] Continue reading Figure 2 The second disc structure 140 in the gas equalization device 100 can be located at the outlet end of the second gas disc 120. Its interior may include a fourth channel 141 for transmitting process gas supplied via the first outlet I of the first gas disc 110 and the outlet of the second gas disc 120. Several piezoelectric valves may also be included between the third channel 121 and the fourth channel 141 for independently adjusting the size of the inlet of each fourth channel 141.

[0082] Furthermore, in some optional embodiments, the opening degree between the piezoelectric valve 160 and the inlet of the fourth channel 141 can be inversely proportional to the voltage applied to the piezoelectric valve 160. The greater the voltage applied across the piezoelectric valve 160, the smaller the opening degree between the piezoelectric valve 160 and the inlet of the fourth channel 141, and the smaller the flow rate of the process gas output through the piezoelectric valve 160. Conversely, the smaller the voltage applied across the piezoelectric valve 160, the greater the opening degree between the piezoelectric valve 160 and the inlet of the fourth channel 141, and the greater the flow rate of the process gas passing through the piezoelectric valve 160.

[0083] Specifically, please refer to the following: Figure 3 and Figure 4 , Figure 3 A cross-sectional view along the AN-AN direction of the second gas disk and the structure of the second disk in the gas distribution device is shown. Figure 4 A schematic diagram of the structure of a piezoelectric valve in a second gas disc, according to some embodiments of the present invention, is shown.

[0084] like Figure 3 and Figure 4 As shown, in some optional embodiments, the piezoelectric valve 160 can be embedded in the third channel 121 of the second air plate 120, and the number and position of the fourth channel 141 in the second plate structure 140 can correspond one-to-one with the position of the third channel 121 above it, so that the airflow of a specific flow rate transmitted through the third channel 121 can continue to flow downward from the corresponding fourth channel 141.

[0085] like Figure 4As shown, the piezoelectric valve 160 may include multiple sets of piezoelectric ceramics connected in series, for example, four sets of piezoelectric ceramics connected in series to form a piezoelectric ceramic assembly 161. Piezoelectric ceramics are ceramic materials that can convert electrical energy and mechanical energy into each other. The two ends along the series connection direction of the piezoelectric ceramic assembly 161 can be the positive input terminal and the negative output terminal. When energized, the piezoelectric ceramic assembly 161 will deform in the direction of the electric field, and its extension deformation after energization is proportional to the corresponding voltage value applied to it (i.e., the applied electric field strength).

[0086] Those skilled in the art will understand that the above-described scheme of making the piezoelectric valve 160 from piezoelectric ceramic material is merely a non-limiting embodiment provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide a specific solution that is easy for the public to implement, rather than being used to limit the scope of protection of the present invention. Optionally, in some other embodiments, those skilled in the art may also, based on the concept of the present invention, use other materials whose deformation is directly or inversely proportional to the voltage value to make the piezoelectric valve 160, or use an electromagnetic proportional switch instead, to achieve the same technical effect.

[0087] Preferably, such as Figure 4 As shown, when energized, the piezoelectric ceramic assembly 161 can extend longitudinally, approaching the air inlet 142 of the fourth channel 141, to reduce the opening between the piezoelectric valve 160 and the air inlet 142. When de-energized, the piezoelectric ceramic assembly 161 can retract longitudinally, moving away from the air inlet 142 of the fourth channel 141, to increase the opening between the piezoelectric valve 160 and the air inlet 142.

[0088] Furthermore, the piezoelectric valve 170 may also include a spring plate 162 and a valve core 163. The valve core 163 may be located at the bottom end of the piezoelectric ceramic assembly 161. The spring plate 162 may connect the piezoelectric ceramic assembly 161 and the valve core 163; for example, the spring plate 162 may be welded to the valve core 163. The spring plate 162 may provide upward elastic pressure to seal the piezoelectric ceramic assembly 161 within the third channel 121 when not energized.

[0089] like Figure 4As shown, in some preferred embodiments, the valve core 163 can be a ball-head structure. The ball-head valve core 163 can make line contact with the air inlet 142 of the fourth channel 141 below it when electrically sealed. In conventional semiconductor deposition equipment, airflow control devices similar to gate valves are typically used. In gate valves, the valve plate is always in contact with the air inlet body, i.e., they are in surface contact. Therefore, during the gate's translational opening and closing movement, the valve plate will rub against the air inlet body, posing a risk of generating mechanical particles. Moreover, in the surface-contact gate valve translational opening and closing structure, if the frictional forces on both sides of the opening and closing orifice are different, the flowing airflow may deviate from the center, causing local airflow instability and affecting the uniformity of subsequent coating. In contrast, in this embodiment, the ball-head valve core 163 only makes line contact with the air inlet 142 when it is completely sealed, thus eliminating friction between them and avoiding the mechanical particles generated by motion friction in the prior art.

[0090] Those skilled in the art will understand that the above-described design of the valve core 163 as a ball-head structure is merely a non-limiting embodiment provided by the present invention, intended to clearly demonstrate the main concept of the invention and provide a specific solution that is easy for the public to implement, rather than being used to limit the scope of protection of the present invention. Optionally, in some other embodiments, those skilled in the art may also adopt other shapes of valve core 163 structures based on the concept of the present invention, such as conical head structures, square head structures, and other various shapes, to achieve line contact with the air inlet 142 when electrically sealed, so as to avoid mechanical particles generated by friction during the opening and closing movement of the piezoelectric valve 160.

[0091] Alternatively, in some other embodiments, the edge of the air inlet 142 of the fourth channel 141 may not adopt a conventional right-angle structure, but rather a chamfered structure, for example. In this embodiment, due to the presence of the beveled surface in the chamfered structure, no kinematic friction is generated between the valve core 163 and the air inlet 142 during longitudinal opening and closing, thus preventing the introduction of mechanical particles. Therefore, in this embodiment, the valve core 163 is not limited to a specific shape or structure, and the contact between the valve core 163 and the air inlet 142 with the chamfered edge is not limited to surface contact or line contact.

[0092] Furthermore, continue as Figure 4As shown, the spring plate 162 can be made of stainless steel and is connected to the negative output terminal of the piezoelectric ceramic assembly 161, serving as a negative electrode conductor. The end of the spring plate 162 can extend radially outward to abut against the inner wall of the third channel 121, so that when not energized, the spring plate 162 isolates the upper piezoelectric ceramic assembly 161 from the air inlet 142 of the lower fourth channel 141, thus isolating the piezoelectric ceramic assembly 161 from the process gas flowing into the reaction chamber and reducing or preventing corrosion of the piezoelectric ceramic assembly 161 by the process gas flowing into the reaction chamber. In contrast, the gate valve in the prior art airflow control device for opening and closing the gate valve lacks a blocking component. Therefore, mechanical particles generated during the opening and closing process of the gate valve can easily enter the reaction chamber with the process gas, which is detrimental to the coating within the chamber.

[0093] Furthermore, continue as Figure 4 As shown, the end of the spring plate 162 can be tilted downwards so that the spring plate 162 can be arranged in an umbrella shape between the piezoelectric ceramic assembly 161 and the valve core 163. The umbrella-shaped downward tilting end facilitates the downward flow of process gas when the piezoelectric valve 160 is open between the inlet 142 of the lower fourth channel 141. Furthermore, mechanical particles that may be generated due to the deformation of the piezoelectric ceramic assembly 161 can be blocked by the umbrella-shaped spring plate 162. Moreover, due to the special properties of stainless steel, the spring plate 162 itself generates few or no mechanical particles, thereby further preventing mechanical particles from falling into the reaction chamber and improving the cleanliness of subsequent coating processes.

[0094] Next, please refer to Figure 5 and Figure 6 , Figure 5 A bottom view of the second air disc of the gas equalization device provided according to some embodiments of the present invention is shown. Figure 6 A bottom view of the control panel in the gas equalization device is shown.

[0095] like Figure 5 As shown, in some embodiments, the interior of the second gas plate 120 may include multiple third channels 121. The bottom ends of these third channels 121 may be embedded with a corresponding number of piezoelectric valves 160 for individually adjusting the flow rate of the process gas output from each third channel 121. Optionally, the interior of the second gas plate 120 may also include multiple conventional channels 122. These conventional channels 122 may directly output process gas without piezoelectric valves 160, or they may have conventional outlet valves internally, with the flow rate of the output gas uniformly controlled by an external gas control unit. Multiple bolt holes 123 may also be provided on the outer ring of the second gas plate 120 for fixing and connecting the second plate structure 140 below it.

[0096] like Figure 6 As shown, the second disc structure 140 is located below the second air disc 120. The outer ring of the second disc structure 140 may also have a corresponding number of bolt connection holes 123, the positions of which correspond to... Figure 5 The second air disc 120 shown is located below a plurality of bolt holes 123 on the outer ring of the second air disc 120, so that the second disc structure 140 can be bolted to the lower surface of the second air disc 120.

[0097] Furthermore, preferably, the second disc structure 140 can be a control disc for controlling the independent voltage value applied to each piezoelectric valve 160 embedded in the second air disc 120, thereby independently adjusting the opening size between each piezoelectric valve 160 and the air inlet 142 of each fourth channel 141.

[0098] Combination Figure 2 As shown, since the second air plate 120 and its lower second plate structure 140 can be fixed to the first air plate 110 by bolts, and combined with the upward elastic pressure provided by the spring plate 162, the piezoelectric ceramics connected in series above can be tightly attached together when no power is applied. Therefore, the lower surface of the first air plate 110, the third channel 121 of the second air plate 120 and the spring plate 162 can form a sealed space when no power is applied, thereby sealing the piezoelectric ceramic assembly 161 in the third channel 121.

[0099] Please continue reading. Figure 2 The semiconductor deposition apparatus provided by this invention may further include a spray plate 180. The spray plate 180 includes multiple exhaust channels 181. Those skilled in the art can determine the opening size between each piezoelectric valve 160 in the gas equalization device 100 located at the gas inlet end of the spray plate 180 and the gas inlet 142 of the fourth channel 141 based on the coating thickness of each region on the wafer surface within the reaction chamber. This ensures that the process gas before reaching the spray plate 180 is sufficiently uniform, and consequently, ensures that the process gas reaching the wafer surface after passing through the spray plate 180 is sufficiently uniform.

[0100] In the above embodiments of the present invention, by using the above-mentioned multiple piezoelectric valves 160 to control the opening size between them and the air inlet 142 of the fourth channel 141 below, the opening size of each air inlet 142 can be adjusted independently according to actual needs, thereby enabling precise control of the flow rate of process gas to a point and a certain asymmetrical area. This structure is not only compact, but also has high control precision.

[0101] Next, please refer to Figure 7 , Figure 7 A side view of a gas equalization device provided according to other embodiments of the present invention is shown.

[0102] Preferably, such as Figure 7 As shown, in some other embodiments of the present invention, two process gases can be further introduced into the gas distribution device 100. A first inlet pipe 151, sealed to the inlet flange 150, can be connected to a first process gas source for introducing the first process gas into the gas distribution device 100. A third inlet pipe 153, sealed to the inlet flange 150, can be connected to a second process gas source for introducing the second process gas into the gas distribution device 100. A first gas distribution channel 171 for transmitting the first process gas may be included in the central region of the first gas plate 110, and a second gas distribution channel 172 for transmitting the second process gas is also included in the outer ring of the central region.

[0103] like Figure 7 As shown, the first process gas (the first arrow located in the central region) can flow in from the first inlet pipe 151 and flow to the outlet end of the second gas plate 120 via the first gas distribution channel 171 located in the central region of the first gas plate 110.

[0104] To more clearly illustrate the flow path of the first process gas in the gas distribution device 100, it can be combined with... Figure 8 and Figure 9 , Figure 8 The diagram shows a top view of a gas equalization device according to other embodiments of the present invention. Figure 9 for Figure 8 A cross-sectional view of the gas distribution device along the AK-AK direction. (See attached image.) Figure 9 As shown, the arrow direction clearly indicates the complete flow direction of the first process gas in the first gas disk 110 and the second gas disk 120 of the gas equalization device 100.

[0105] Further, please see Figure 10 , Figure 10 for Figure 9 The diagram shows a bottom view of the gas distribution device (excluding the second disc structure). Combined with... Figure 7 , Figure 9 , Figure 10 As shown, multiple independently controlled piezoelectric valves 160 in the second gas plate 120 can be located at the outlet end of the first gas distribution channel 171, and can be used to individually adjust the flow rate of the output first process gas in each direction. The piezoelectric valves 160 in the second gas plate 120 can be controlled without relying on an external mass flow controller (MFC), so the gas flow rate at the outlet of each third channel 121 can be controlled individually.

[0106] Please continue to return Figure 7The second process gas (the second arrow on the outer ring of the central region) can flow in from the third inlet pipe 153 and flow to the outlet end via the second gas distribution channel 172 on the outer ring of the central region of the first gas plate 110, directly to the spray plate 180, and be output to the reaction chamber from the outlet channel 181.

[0107] To more clearly illustrate the flow path of the second process gas in the gas distribution device 100, it can be combined with... Figure 8 and Figure 11 , Figure 11 for Figure 8 A cross-sectional view of the gas equalization device along the AL-AL direction. (See attached image.) Figure 11 As shown, the arrow direction clearly indicates the complete flow direction of the second process gas in the first gas disk 110 of the gas equalization device 100.

[0108] Furthermore, please refer to [the relevant documentation / reference]. Figure 10 ,like Figure 7 , Figure 10 and Figure 11 As shown, the bottom end of the second gas distribution channel 172 in the first gas plate 110 may include multiple outlet valves 112 for uniformly adjusting the flow rate of the output second process gas. Optionally, the outlet valves 112 in the first gas plate 110 can be uniformly controlled by an external mass flow controller.

[0109] In the above embodiments, by setting an independent first gas distribution channel 171 for transmitting the first process gas and a second gas distribution channel 172 for transmitting the second process gas in the gas distribution device 100, the two process gases can be prevented from meeting and reacting chemically in advance, thereby generating particles that affect the purity of the subsequent coating in the chamber, or even cause coating failure and affect product quality.

[0110] Furthermore, in this embodiment, since the directional flow rate of the second process gas can be uniformly controlled by the external MFC, the second process gas can be used as the base gas. This allows the first process gas, which has a more flexible degree of freedom in flow control, to change the opening size between each piezoelectric valve 160 and the air inlet 142 of the fourth channel 141 according to the distribution of the second process gas. This finely adjusts and changes the airflow distribution of the first process gas, ensuring that the production material output to the reaction chamber for chemical reaction is uniform, thereby ultimately achieving the goal of uniform film uniformity.

[0111] To more clearly describe the working principle of the gas equalization device 100, please refer to [link / reference]. Figure 12 , Figure 12 A flowchart of a semiconductor manufacturing process provided according to some embodiments of the present invention is shown.

[0112] In some embodiments of the present invention, a semiconductor deposition method can be performed using a semiconductor deposition apparatus including the above-described gas equalization device 100. For example... Figure 12 As shown, the semiconductor deposition method may include the following step S1210: placing the wafer into the reaction chamber of the semiconductor deposition apparatus.

[0113] Alternatively, a robotic arm can be used to place the wafer into the reaction chamber.

[0114] Then, step S1220 can be performed: process gas and protective gas are introduced into the reaction chamber via the gas equalization device and spray plate in the semiconductor deposition equipment, so that the process gas is concentrated on the wafer surface for thin film deposition.

[0115] Specifically, please combine Figure 2 In this ventilated coating step, at least one process gas can be introduced through the first inlet pipe 151 at the inlet end to perform the thin film deposition process. The process gas can flow downward into the second gas disk 120 through the second channel 111 located inside the first gas disk 110 in the gas distribution device 100, and then flow into the third channel 121 of the second disk structure 140 via the third channel 121 in the second gas disk 120, flowing towards the spray disk 180, and flowing into the reaction chamber from the outlet channel 181 in the spray disk 180. The protective gas can flow from the second outlet end II in the edge region of the first gas disk 110 to the spray disk 180, surrounding the process gas, and also flow into the reaction chamber from the outlet channel 181 in the spray disk 180.

[0116] Next, step S1230 can be executed: in response to the completion of thin film deposition, the wafer is removed and the uniformity of the film thickness on the wafer surface is detected. Then, after obtaining the film thickness on the wafer surface, it can be compared with a preset film thickness standard value. In step S1340: in response to the non-compliance of the uniformity of the film thickness on the wafer surface (i.e., inconsistent with the film thickness standard value), the size of several independently controlled piezoelectric valves 160 and the air inlets 142 of each fourth channel 141 in the gas equalization device 100 above the corresponding area can be independently adjusted according to the film thickness of each area, and the wafer is put back into the reaction chamber for re-gasification and film deposition.

[0117] Specifically, optionally, the voltage applied to each piezoelectric valve 160 above the corresponding region can be adjusted individually according to the film thickness of each region, thereby adjusting the opening between the piezoelectric valve 160 and the air inlet 142 of the fourth channel 141. The opening between the piezoelectric valve 160 and the air inlet 142 of the fourth channel 141 is inversely proportional to the voltage applied to the piezoelectric valve. Once the opening between the piezoelectric valve 160 above the corresponding region and the air inlet 142 of the fourth channel 141 is adjusted, the wafer can be placed back into the reaction chamber for gas deposition.

[0118] Furthermore, in response to the uniformity of the film thickness on the wafer surface being qualified (i.e. consistent with the standard film thickness value), the size of each piezoelectric valve 160 and the air inlet of each fourth channel in the gas equalization device 100 can be determined, and the opening between each piezoelectric valve 160 and the air inlet 142 of the fourth channel 141 can be determined, so as to carry out the thin film deposition process of the next wafer.

[0119] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0120] In summary, the present invention provides a gas homogenizing device, a semiconductor process equipment, a semiconductor process method, and a computer-readable storage medium, which can adjust the uniformity of the process gas before it enters the spray plate and distribute it evenly in the middle area of ​​the spray plate. This allows the gas to concentrate on the wafer surface in the central area after entering the reaction chamber, which is beneficial for controlling the film thickness, achieving coating consistency, improving equipment applicability, and shortening the development cycle.

[0121] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas equalization device, characterized in that, include: The first plate structure includes a first gas plate, the air inlet end of which is connected to a top plate. The gap between the outer side of the first gas plate and the top plate forms a first channel for transmitting protective gas. The interior of the first gas plate includes a second channel for transmitting process gas. The process gas is output to the second gas plate via a first air outlet end of the first gas plate and output via an air outlet end of a third channel in the second gas plate. The protective gas surrounds the outer ring of the process gas and is output from the second air outlet end of the first gas plate. The second disc structure is located at the outlet end of the second gas disc, and its interior includes a fourth channel for transmitting the process gas. as well as Several piezoelectric valves are disposed between the third channel and the fourth channel for independently adjusting the size of the air inlet of each of the fourth channels. Each piezoelectric valve includes a piezoelectric ceramic assembly, a spring plate, and a valve core embedded in the third channel. The valve core is located at the bottom end of the piezoelectric ceramic assembly. The spring plate connects the piezoelectric ceramic assembly and the valve core and provides elastic pressure to seal the piezoelectric ceramic assembly in the third channel when it is not energized. The end of the spring plate extends radially outward to abut against the inner wall of the third channel so that the spring plate isolates the piezoelectric ceramic assembly from the air inlet of the fourth channel when it is not energized.

2. The gas equalization device as described in claim 1, characterized in that, The opening degree between the piezoelectric valve and the air inlet of the fourth channel is inversely proportional to the voltage applied to the piezoelectric valve.

3. The gas equalization device as described in claim 2, characterized in that, The piezoelectric valve comprises multiple sets of piezoelectric ceramics connected in series to form a piezoelectric ceramic assembly. The two ends along the series connection direction of the piezoelectric ceramic assembly are a positive input terminal and a negative output terminal, respectively. The extension deformation of the piezoelectric ceramic assembly after being energized is proportional to the voltage applied to it.

4. The gas equalization device as described in claim 3, characterized in that, When energized, the piezoelectric ceramic assembly extends longitudinally closer to the air inlet of the fourth channel to reduce the opening between the piezoelectric valve and the air inlet. When de-energized, the piezoelectric ceramic assembly retracts longitudinally away from the air inlet of the fourth channel to increase the opening between the piezoelectric valve and the air inlet.

5. The gas equalization device as described in claim 1, characterized in that, The valve core has a ball head structure and makes line contact with the air inlet of the fourth channel below it when it is electrically sealed.

6. The gas equalization device as described in claim 1, characterized in that, The end of the spring sheet is inclined downward so that the spring sheet is arranged in an umbrella shape between the piezoelectric ceramic assembly and the valve core.

7. The gas equalization device as described in claim 1, characterized in that, The central region of the first gas disk includes a first gas distribution channel for transmitting a first process gas, and the outer ring of the central region also includes a second gas distribution channel for transmitting a second process gas.

8. The gas equalization device as described in claim 7, characterized in that, In the second gas plate located at the outlet end of the first gas distribution channel, each of the piezoelectric valves is used to individually adjust the flow rate of the first process gas output.

9. The gas equalization device as described in claim 7, characterized in that, The second gas distribution channel in the first gas plate includes multiple gas outlet valves for uniformly adjusting the flow rate of the second process gas output.

10. A semiconductor deposition apparatus, characterized in that, include: The reaction chamber contains a wafer for thin film deposition. A spray plate is located above the reaction chamber. The spray plate includes multiple gas outlet channels for introducing protective gas and process gas required for the thin film deposition process into the reaction chamber. as well as The gas equalization device as described in any one of claims 1 to 9 is disposed above the spray plate, for causing the protective gas to surround the outer ring of the process gas and for causing the process gas to be evenly distributed on the spray plate.

11. A semiconductor deposition method, characterized in that, Includes the following steps: The wafer is placed in the reaction chamber of the semiconductor deposition apparatus as described in claim 10; Process gas and protective gas are introduced into the reaction chamber through the gas equalization device and spray plate in the semiconductor deposition equipment, so that the process gas is concentrated on the wafer surface for thin film deposition; In response to the completion of the thin film deposition, the wafer is removed and the uniformity of the film thickness on the wafer surface is detected; as well as In response to the non-uniformity of the film thickness on the wafer surface, several piezoelectric valves in the gas equalization device above the corresponding region and the size of the air inlet of each fourth channel are independently adjusted according to the film thickness of each region, and the wafer is put back into the reaction chamber for gas coating.

12. The deposition method as described in claim 11, characterized in that, The step of responding to non-uniformity of the film thickness on the wafer surface, independently adjusting the size of several piezoelectric valves and the air inlet of each fourth channel in the gas equalization device above the corresponding region according to the film thickness of each region, and then placing the wafer back into the reaction chamber for gas-assisted coating includes: Based on the film thickness of each region, the voltage applied to each piezoelectric valve above the corresponding region is individually adjusted to adjust the opening between the piezoelectric valve and the air inlet of the fourth channel, wherein the opening between the piezoelectric valve and the air inlet of the fourth channel is inversely proportional to the voltage applied to the piezoelectric valve; and In response to adjusting the opening between the piezoelectric valve and the air inlet of the fourth channel, the wafer is placed back into the reaction chamber for gas deposition.

13. The deposition method as described in claim 12, characterized in that, It also includes the following steps: In response to the uniformity of the film thickness on the wafer surface being qualified, the size of the inlet of each piezoelectric valve and each fourth channel in the gas equalization device is determined, and the opening between each piezoelectric valve and the inlet of the fourth channel is determined, and the thin film deposition process of the next wafer is carried out.

14. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the semiconductor deposition method as described in any one of claims 11 to 13 is implemented.

Images