一种蒸镀掩膜版及其形成方法
By using an ultra-thin wafer and a fine etching process to form a vapor deposition mask, the problem of high-precision sub-pixel vapor deposition difficulty in existing vapor deposition masks has been solved, achieving ultra-thin size and high-precision vapor deposition effect, avoiding deformation and screen door effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ZHEJIANG HONGXI TECH CO LTD
- Filing Date
- 2024-04-09
- Publication Date
- 2026-07-17
AI Technical Summary
Existing vapor deposition masks are difficult to use for sub-pixel deposition at the 1-micron level and below, and are prone to deformation during the deposition process, which cannot meet the high precision requirements of OLED devices.
Using an ultra-thin wafer as the main mask, combined with a protective layer and a metal layer, fine sub-vaporized vias and vapor-deposited vias are formed through anisotropic dry etching process. A sacrificial layer is used to protect the precision of the sub-vaporized vias, and excess material is removed by chemical mechanical polishing and wet etching.
An ultra-thin vapor deposition mask has been developed, which can accurately deposit sub-pixels at the level of 1 micrometer and below, avoiding the screen-door effect and meeting the high precision requirements of OLED devices.
Smart Images
Figure CN118308686B_ABST