A gas-liquid dual-circulation wafer support disk and a chemical deposition method thereon

Abstract

This invention discloses a gas-liquid dual-circulation wafer support disk, comprising a support disk body and a support unit integrally disposed on the support disk body. The support disk body contains a liquid heating unit and a gas heating unit, with the heating circulation directions of the liquid heating unit and the gas heating unit arranged opposite to each other. A method for high-temperature chemical deposition of wafers using the gas-liquid dual-circulation wafer support disk is also disclosed. This gas-liquid dual-circulation wafer support disk effectively ensures uniform heating and stable support across the entire disk surface, resulting in uniform film thickness and high product quality from the chemically deposited wafer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, specifically to a gas-liquid dual-circulation wafer support disk and a method for chemical deposition using the disk. Background Technology

[0002] In the semiconductor industry, one commonly used wafer fabrication process is thin-film deposition (TFT) technology. This process involves a robotic arm placing the wafer onto a wafer support pad. A heating unit within the support pad heats the wafer while simultaneously chemically depositing a thin film on its surface. To ensure uniform film thickness and consistent quality across multiple production lines, the heating effect on the wafer support pad must be uniform. Existing support pad designs use vacuum brazing to weld three base layers together. The middle layer incorporates a liquid channel, using water circulation to control the pad's temperature. Vertical pillar holes are designed on the wafer support pad surface to accommodate sapphire or ceramic pillars, with the apex of the pillars slightly higher than the pad surface to support the wafer during production.

[0003] Existing technologies rely solely on heating via liquid channel water circulation, which provides significant heating effects. However, the temperature near the inlet of the entire wafer surface is higher than that near the outlet, resulting in uneven temperature distribution across the wafer. This poses a risk of uneven film thickness across the entire wafer during the chemical deposition process.

[0004] The support units of a wafer are limited by the depth machining tolerance of the vertical pillar holes, the length tolerance of the sapphire pillars or ceramic pillars, and the influence of human tolerances caused by the manual assembly process. As a result, after the sapphire pillars or ceramic pillars are assembled, multiple support points of the entire disk cannot be kept in the same plane, resulting in a small number of points failing to provide support, wasting resources, or creating the risk that the wafer cannot always be kept on the same horizontal plane.

[0005] Since the entire process of chemically depositing a thin film on the wafer surface is completed in a vacuum chamber, it is difficult for sapphire or ceramic pillars to remain loose under long-term working conditions. Once loosening occurs, it is during the vacuuming process, and there is a risk that the sapphire or ceramic pillars will detach from the disk surface. Summary of the Invention

[0006] The purpose of this invention is to solve the problems of uneven heating in existing wafer surface chemical deposition thin film support pads, which leads to uneven film thickness during wafer forming, multiple support points not being on the same plane causing wafer offset or tilting, and thus low product processing quality. Furthermore, the invention addresses the issues of multiple or a few support points failing to function and sapphire or ceramic pillars falling off during long-term operation. The invention provides a gas-liquid dual-circulation wafer support pad that effectively ensures uniform heating and stable support across the entire pad surface, uniform film thickness during wafer chemical deposition, and high product quality, along with a chemical deposition method using the same pad.

[0007] The technical solution adopted by the present invention to achieve its first inventive objective is: a gas-liquid dual-circulation wafer support disk, comprising a support disk body and a support unit integrally disposed on the support disk body, wherein a liquid heating unit and a gas heating unit are disposed inside the support disk body, and the heating circulation directions of the liquid heating unit and the gas heating unit are arranged opposite to each other.

[0008] This gas-liquid dual-circulation wafer support disk integrates the support disk body and support units, avoiding the risk of detachment during use that occurs with sapphire or ceramic pillars used as support points. Furthermore, the integrated support units effectively ensure that the support points are on the same plane, preventing wafer shifting or tilting during use, resulting in more stable support, smoother production processes, and reduced product defect rates. To achieve uniform film thickness in wafer formation, a gas-liquid dual-circulation heating unit is incorporated within the support disk body. This unit simultaneously incorporates liquid and gas heating, with their heating circulation directions opposite to each other. This relative cyclic movement effectively solves the problem of localized temperature unevenness on the support disk surface, reducing film thickness unevenness caused by temperature inconsistencies during high-temperature chemical deposition, and significantly improving wafer processing yield and quality. Moreover, this gas-liquid dual-circulation wafer support disk features a simple structure, low cost, and excellent heating effect.

[0009] Preferably, the support plate body comprises a gas-liquid interface plate, a liquid channel plate, a gas channel plate, and a support plate, which are connected as a single unit by vacuum brazing. These components are stacked sequentially from bottom to top. The support plate body mainly includes a gas-liquid interface plate connected to the vacuum chamber, a liquid channel plate positioned above the gas-liquid interface plate, a gas channel plate positioned above the liquid channel plate, and a support plate positioned above the gas channel plate. Furthermore, to achieve a sealing performance for the gas-liquid circulation, the gas-liquid interface plate, liquid channel plate, gas channel plate, and support plate are vacuum brazed together to form a sealed whole.

[0010] Preferably, the support unit is formed by a plurality of support bosses evenly distributed on the surface of the support disk. The support bosses are integrally manufactured with the support disk, and a ceramic oxide layer is formed on the exterior of the support bosses through hard anodizing. The support unit, formed by a plurality of support bosses integrally molded on the surface of the support disk, ensures that the end faces of each support boss are on the same plane to form a horizontal support surface, enabling horizontal placement of the wafer during use. To increase the strength of the support bosses and reduce the occurrence of particulate matter contamination caused by contact friction between the wafer and the support bosses, the support bosses undergo hard anodizing treatment, thereby forming a ceramic oxide layer on the exterior of the support bosses.

[0011] Preferably, the liquid heating unit is disposed on a liquid channel plate, and the liquid heating unit is formed by circulating heating liquid into the liquid channel disposed on the liquid channel plate. The liquid heating unit is disposed on the liquid channel plate, which can be disposed on the upper plate surface or the lower plate surface of the liquid channel plate. Specifically, liquid channels are provided on the liquid channel plate, and circulating liquid is circulated into the liquid channel to achieve liquid circulation heating.

[0012] Preferably, the liquid channel includes a spiral liquid channel and a reversing liquid channel communicating with the spiral liquid channel. The spiral liquid channel is arranged outward from the center of the liquid channel plate in a spiral structure, and the reversing liquid channel is arranged at the edge of the liquid channel plate in a reciprocating circulation structure. In order to further avoid the temperature difference between the inlet and outlet of the liquid heating unit, the liquid channel is segmented, and the spiral liquid channel and the reversing liquid channel are used to achieve uniform temperature distribution of the heating liquid throughout the liquid heating unit.

[0013] Preferably, the gas heating unit is disposed on the gas channel plate and / or the liquid channel plate, and the gas heating unit is formed by introducing heating gas into the gas channel disposed on the gas channel plate and / or the liquid channel plate. The gas heating unit is formed by introducing heating gas into the gas channels on the gas channel plate or through the gas channels on the gas channel plate and the gas channels on the liquid channel plate. Circulating heating gas is introduced into the gas channels, thus creating a gas heating unit above, or above and below, the liquid heating unit. The circulation direction of the gas heating unit is opposite to that of the liquid heating unit. Specifically, when the liquid is heated from the outside to the inside along the liquid channel, the gas heating unit is heated from the inside to the outside along the gas channel; conversely, when the liquid is heated from the inside to the outside along the liquid channel, the gas heating unit is heated from the outside to the inside along the gas channel. This allows the gas heating unit and the liquid heating unit to complement each other, compensating for the temperature loss caused by factors such as the length of the water and gas channels, thereby ensuring a uniform temperature across the entire disk surface. This, in turn, ensures that a thin film of uniform thickness can be formed on the wafer during the high-temperature chemical deposition process.

[0014] Preferably, the gas channels are arranged in a spiral structure, and the distance between the gas channels is greater than the distance between the liquid channels. The overall spiral structure of the gas channels, with the greater distance between the gas channels than between the liquid channels, allows for a staggered arrangement of the gas and liquid channels, thus achieving a misalignment of the circulating positions of the heating gas and heating liquid, and ensuring complementary and uniform temperature throughout the heating process.

[0015] Preferably, the gas heating unit is positioned above the liquid heating unit or covers both the liquid heating unit and its surrounding surface. Positioning the gas heating unit above the liquid heating unit allows for a more even distribution of heat generated by both the liquid and gas heating units across the support plate, resulting in uniform heating. Alternatively, gas heating units can be positioned both above and below the liquid heating unit to compensate for the temperature difference caused by the circulation of heat from the liquid heating unit. Furthermore, the combination of upper and lower gas heating units ensures that heat is transferred upwards, resulting in more even heat distribution to the support plate and guaranteeing uniform heating.

[0016] Preferably, the support plate body is provided with liquid inlet / outlet for the liquid heating unit and gas inlet / outlet for the gas heating unit, and the liquid inlet / outlet and gas inlet / outlet are staggered. The support plate body has liquid inlet / outlet for the liquid heating unit and gas inlet / outlet for the gas heating unit, thereby allowing external heating liquid and heating gas to circulate and heat in the liquid and gas channels. To achieve the relative arrangement of the circulating heating directions of the liquid heating unit and the gas heating unit, and the vertical staggered arrangement between the liquid and gas channels, the liquid inlet / outlet and gas inlet / outlet are also staggered.

[0017] The technical solution adopted by this invention to achieve its second objective is: a method for high-temperature chemical deposition of a wafer using a gas-liquid dual-circulation wafer support disk, comprising the following steps: Step 1: Place the gas-liquid dual-circulation wafer support disk inside the vacuum chamber of the high-temperature chemical deposition apparatus and connect it to the external heating liquid pipeline and heating gas pipeline; Step 2: The wafer to be chemically deposited is transferred to the support unit of the support tray by a robotic arm, so that the wafer is always kept horizontal; Step 3: Evacuate the vacuum chamber; Step 4: Turn on the heating liquid and heating gas, start the liquid heating unit to circulate it, and at the same time start the gas heating unit to circulate the gas, keeping the gas circulation direction relative to the liquid circulation direction, to perform high-temperature chemical deposition processing on the wafer to form a uniform thin film on the wafer.

[0018] This method of chemical deposition on wafers using a gas-liquid dual-circulation wafer support pad places the support pad inside a vacuum chamber, then stably places the wafer on the support unit. This ensures wafer levelness, making the process smoother and guaranteeing the formation of a uniformly thick film during chemical deposition. Furthermore, this method enables consistent wafer quality across multiple production lines, reducing defect rates and significantly improving product quality and productivity. Moreover, the wafer is heated uniformly during production, and the support unit and support pad are integrally manufactured, eliminating the risk of support unit detachment. Friction between the wafer and support unit prevents particulate matter generation, thus preventing wafer contamination and resulting in high product quality and reliability.

[0019] The beneficial effects of this invention are as follows: This gas-liquid dual-circulation wafer support disk, by setting liquid heating units and gas heating units respectively inside the support disk body, achieves gas-liquid dual circulation. The gas circulation supplements the heat loss generated by the liquid circulation during operation. The gas-liquid dual circulation complements each other, ensuring the temperature uniformity of the entire disk surface. This reduces the film thickness unevenness caused by temperature unevenness during the high-temperature chemical deposition process of the wafer, and achieves a significant improvement in the yield and quality of wafer processing.

[0020] The support units on the surface of the support plate are manufactured as a single piece. Compared with the existing technology that uses sapphire or ceramic pillars to assemble on the support plate, this method is more cost-effective and efficient. It avoids product damage and errors caused by manual assembly and the support units will not loosen or fall off even after long-term use.

[0021] The method of chemically depositing wafers using a gas-liquid dual-circulation wafer support pad involves placing the wafer on the support unit by a robotic arm during the process flow. The wafer is kept horizontal at all times, and the robotic arm can place the wafer smoothly during the placement process, avoiding the offset or tilt caused by the support points not being on the same plane after placement. This makes the process smoother and reduces the product defect rate. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a structure of the gas-liquid dual-circulation wafer support disk of the present invention; Figure 2 This is an exploded structural diagram of a gas-liquid dual-circulation wafer support disk of the present invention; Figure 3 This is an exploded structural diagram of the gas-liquid dual-circulation wafer support disk of the present invention from another angle; Figure 4 This is a cross-sectional view of the gas-liquid dual-circulation wafer support disk of the present invention; Figure 5 This is an exploded structural diagram of the gas-liquid dual-circulation wafer support disk in Example 2; Figure 6 This is a cross-sectional view of the gas-liquid dual-circulation wafer support disk in Example 2; Figure 7 This is a schematic diagram of a structure of the liquid channel plate in Example 2; Figure 8 This is an exploded structural diagram of the gas-liquid dual-circulation wafer support disk in Example 3; Figure 9 This is an exploded structural diagram of the gas-liquid dual-circulation wafer support disk from another angle in Example 3; Figure 10 This is a cross-sectional view of the gas-liquid dual-circulation wafer support disk in Example 3; In the diagram: 100, main body of the support plate; 200, support unit; 300, liquid heating unit; 400, gas heating unit. 1. Gas-liquid interface plate; 10. Upper surface of interface plate; 11. Lower surface of interface plate; 12. Lower groove; 13. Lower annular surface; 14. Central boss; 15. Radial boss; 16. First liquid port; 17. Second liquid port; 18. First gas port; 19. Second gas port. 2. Liquid channel plate; 20. Lower surface of liquid channel plate; 21. Upper surface of liquid channel plate; 22. Liquid channel; 22-1. Spiral liquid channel; 22-2. Reversing liquid channel; 23. First liquid port; 24. Second liquid port; 25. First gas port; 26. Second gas port; 27. Liquid channel plate gas channel. 3. Airway plate; 30. Upper surface of airway plate; 31. Lower surface of airway plate; 32. Air inlet of first airway plate; 33. Air inlet of second airway plate; 34. Airway of airway plate. 4. Support plate; 40. Support plate body; 41. Support boss; 42. Oxide layer. Detailed Implementation

[0023] The present invention will now be described in detail with reference to specific embodiments and accompanying drawings.

[0024] Example 1: exist Figure 1 , Figure 2 , Figure 3 In the illustrated embodiment, in the semiconductor field, a chemical deposition process is required to form a thin film on the wafer surface during wafer manufacturing. This process needs to be completed in a vacuum chamber. To complete this process, the wafer needs to be supported and heated, requiring a wafer support base to support the wafer. At the same time, the wafer support base also needs to have a module or function for overall heating of the wafer.

[0025] A gas-liquid dual-circulation wafer support disk includes a support disk body 100 and a support unit 200 integrally disposed on the support disk body 100. The support disk body 100 is provided with a liquid heating unit 300 and a gas heating unit 400, and the heating circulation directions of the liquid heating unit 300 and the gas heating unit 400 are arranged opposite to each other.

[0026] The support plate body 100 is provided with a liquid inlet / outlet communicating with the liquid heating unit 300 and a gas inlet / outlet communicating with the gas heating unit 400, and the liquid inlet / outlet and the gas inlet / outlet are offset.

[0027] The main body 100 of the support plate includes a gas-liquid interface plate 1, a liquid channel plate 2, a gas channel plate 3 and a support plate 4 connected by vacuum brazing. The gas-liquid interface plate 1, the liquid channel plate 2, the gas channel plate 3 and the support plate 4 are stacked sequentially from bottom to top.

[0028] The liquid heating unit 300 is disposed on the liquid channel plate 2, and is formed by introducing heating liquid into the liquid channel 22 disposed on the liquid channel plate 2.

[0029] The liquid channel 22 includes a spiral liquid channel 22-1 and a reversing liquid channel 22-2 connected to the spiral liquid channel 22-1. The spiral liquid channel 22-1 is arranged outward from the center of the liquid channel plate 2 in a spiral structure. The reversing liquid channel 22-2 is arranged at the edge of the liquid channel plate 2 in a reciprocating circulation structure.

[0030] The gas heating unit 400 is disposed on the gas channel plate 3 and / or the liquid channel plate 2. The gas heating unit 400 is formed by introducing heating gas into the gas channel disposed on the gas channel plate 3 and / or the liquid channel plate 2.

[0031] The air passages are arranged in a spiral structure, and the distance between the air passages is greater than the distance between the liquid passages.

[0032] The gas heating unit 400 is disposed above the liquid heating unit 300 or the gas heating unit 400 covers the liquid heating unit 300 above and below.

[0033] In this embodiment, the liquid channel plate 2 is connected to the upper surface of the gas-liquid channel interface plate 1 by vacuum brazing, the gas channel plate 3 is connected to the upper surface of the liquid channel plate 2 by vacuum brazing, and the support plate 4 is connected to the upper surface of the gas channel plate 3 by vacuum brazing.

[0034] The gas-liquid interface plate 1 includes an upper interface plate surface 10 and a lower interface plate surface 11. A lower plate groove 12 is provided on the lower interface plate surface 11. The lower plate groove 12 is arranged in a ring groove structure from the center of the lower interface plate surface 11 outward. The groove wall of the lower plate groove 12 and the lower interface plate surface 11 form a lower ring surface 13. A central boss 14 is concentrically arranged inside the lower plate groove 12 and the interface plate. A radial boss 15 is integrally arranged radially with the central boss 14. The width of the radial boss 15 is smaller than the diameter of the central boss 14. A first liquid channel port 16 is arranged at the center of the central boss 14, which is connected to the upper and lower plates of the gas-liquid channel interface plate 1. A second liquid channel port 17 is arranged at the end of the radial boss 15 away from the center of the interface plate. The first liquid channel port 16 and the second liquid channel port 17 are on the same diameter. The first liquid channel port 16 can be a liquid channel inlet or a liquid channel outlet. The second liquid channel port 17 can be a liquid channel outlet or a liquid channel inlet.

[0035] A first airway 18 is provided on the side of the central boss 14 that is offset from the radial boss 15. A second airway 19 is provided on the lower annular surface 13 in the radial direction of the first airway 18. The first airway 18 and the second airway 19 are not on the same diameter, and the second airway 19 is located close to the edge of the lower annular surface 13. The first airway 18 can be an airway inlet or an airway outlet, and the second airway 19 can be an airway outlet or an airway inlet.

[0036] In use, when the first liquid port 16 is set as the liquid port inlet, the second liquid port 17 is set as the liquid port outlet. At this time, the first air port 18 is set as the air port outlet, and the second air port 19 is set as the air port inlet, so that the circulation directions of the liquid port and the air port move relative to each other.

[0037] The thickness of the gas-liquid interface plate 1 is 14mm to 16mm.

[0038] The liquid channel plate 2 includes a lower plate surface 20 and an upper plate surface 21. A liquid channel 22 is provided on the upper plate surface 21. The liquid channel 22 is arranged in a spiral structure outwards along the center of the liquid channel plate 2, and the liquid channels at the edge of the liquid channel plate 2 are arranged in a zigzag loop structure. Inside the liquid channel 22, corresponding to the first liquid channel opening 16 and the second liquid channel opening 17 on the gas-liquid interface plate 1, a first liquid port 23 and a second liquid port 24 are provided. A first gas port 25 is provided on the annular surface of the liquid channel 22 near the first liquid port 23, corresponding to the first gas channel opening 18. A second gas port 26 is provided at the edge of the liquid channel plate 2, corresponding to the second gas channel opening 19.

[0039] The thickness of the liquid channel plate 2 is 20mm to 22mm.

[0040] The liquid heating unit 300 has an inlet and an outlet formed by a first liquid channel 16 and a first liquid port 23 connected vertically, and an outlet and an outlet formed by a second liquid channel 17 and a second liquid port 24 connected vertically.

[0041] The gas channel plate 3 includes an upper plate surface 30 and a lower plate surface 31. A first gas channel port 32 and a second gas channel port 33 are provided on the upper and lower plates of the gas channel plate 3. A gas channel 34 is provided on the upper plate surface 30. The gas channel 34 is arranged in a generally irregular rotating structure between the first and second gas channel ports 32 and 33 to allow heating gas to pass through and achieve gas heating. The lower plate surface 31 is horizontal and is used for vacuum brazing connection with the liquid channel plate 2. The gas channel plate and gas channel 34 constitute the gas channel for introducing heating gas into the gas heating unit 400.

[0042] The gas heating unit 400 has an air inlet or outlet formed by a first air passage 18, a first air port 25 and a first air passage plate air port 32 that are interconnected from bottom to top, and an air outlet or inlet formed by a second air passage 19, a second air port 26 and a second air passage plate air port 33 that are interconnected from top to bottom.

[0043] like Figure 4 As shown, the support disk 4 includes a support disk body 40 and support bosses 41 disposed on the support disk body 40. Multiple support bosses 41 are evenly distributed and all support bosses 41 have the same height. Each support boss 41 protrudes 0.1mm to 0.14mm from the surface of the support disk body 40. The support bosses 41 undergo hard anodizing, forming an Al2O3 (alumina) ceramic oxide layer 42 on the surface of the multiple support bosses 41. This ceramic oxide layer 42 increases the hardness of the support bosses 41, preventing the risk of particulate matter generation due to contact and friction with the wafer during long-term operation, thereby avoiding wafer contamination accidents.

[0044] The support disk body 40 forms a uniform heating unit with a dual gas-liquid circulation channel, and all the support bosses 41 form oxide support units. This wafer support disk structure offers superior performance and lower cost. The support bosses 41 and the support disk body 40 are manufactured as a single unit, reducing resource waste caused by machining tolerances. It saves on the cost of using and machining sapphire or ceramic pillars. Furthermore, the oxide treatment of the outer surface of the support bosses 41 increases their hardness, preventing the generation of particulate matter due to friction between the wafer and the support bosses 41 during use, thus ensuring wafer cleanliness.

[0045] The dual-circulation gas-liquid heating unit eliminates the need for a single water circulation system to heat the entire surface of the support plate 4. Instead, it utilizes a dual-circulation gas-liquid system to ensure uniform heating. This avoids the problems associated with single-circulation heating, where the temperature difference between the inlet and outlet of the water body is significant due to the length of the liquid channel and the water flow rate, resulting in uneven temperature distribution on the support plate surface.

[0046] The gas-liquid dual-circulation channel uniform heating unit is simultaneously heated by both gas circulation and water circulation. Moreover, the water circulation heating and gas circulation heating adopt relative motion. The temperature difference caused by the length of the water circulation channel and the influence of water flow speed is supplemented by the reverse-moving gas circulation for heating. The water circulation and gas circulation complement each other, realizing uniform heat transfer of the heating unit, thereby achieving uniform setting of wafer heating.

[0047] The liquid channel plate 2 and the air channel plate 3 are connected by vacuum brazing. The air channel plate 3 is above the liquid channel plate 2. Since the water circulation heating effect is better than the air circulation, the water circulation is placed below the air circulation. In this way, the air circulation can more effectively complement the temperature loss caused by the water circulation process, so that the temperature of the entire plate surface is uniform.

[0048] The support disk 4 is located at the top of the gas-liquid dual-circulation wafer support disk, which can better support the wafer. The oxide support unit of the support disk 4 no longer uses the machining of vertical pillar holes and the addition of sapphire pillars or ceramic pillars to achieve support. Instead, multiple support bosses 41 are integrally machined on the disk surface. The support bosses 41 have the same height, and the support surface formed by all the support bosses 41 forms an integral boss surface, which can be regarded as the same plane. When the robot transfers the wafer to the support disk, all the support bosses will support the wafer, so that the wafer can be supported more stably and the surface will not have defects such as tilting.

[0049] Example 2: exist Figure 5 , Figure 6 , Figure 7 In the embodiment shown, a gas-liquid dual-circulation wafer support disk includes a support disk body 100 and a support unit 200 integrally disposed on the support disk body 100. The support disk body 100 is provided with a liquid heating unit 300 and a gas heating unit 400, and the heating circulation directions of the liquid heating unit 300 and the gas heating unit 400 are arranged opposite to each other.

[0050] The support plate body 100 is provided with a liquid inlet / outlet communicating with the liquid heating unit 300 and a gas inlet / outlet communicating with the gas heating unit 400, and the liquid inlet / outlet and the gas inlet / outlet are offset.

[0051] The main body 100 of the support plate includes a gas-liquid interface plate 1, a liquid channel plate 2, a gas channel plate 3 and a support plate 4 connected by vacuum brazing. The gas-liquid interface plate 1, the liquid channel plate 2, the gas channel plate 3 and the support plate 4 are stacked sequentially from bottom to top.

[0052] The liquid heating unit 300 is disposed on the liquid channel plate 2, and is formed by introducing heating liquid into the liquid channel 22 disposed on the liquid channel plate 2.

[0053] The liquid channel 22 includes a spiral liquid channel 22-1 and a reversing liquid channel 22-2 connected to the spiral liquid channel 22-1. The spiral liquid channel 22-1 is arranged outward from the center of the liquid channel plate 2 in a spiral structure. The reversing liquid channel 22-2 is arranged at the edge of the liquid channel plate 2 in a reciprocating circulation structure.

[0054] In this embodiment, the gas heating units 400 are respectively disposed on the gas channel plate 3 and the liquid channel plate 2. The gas heating units disposed on the gas channel plate face the support plate, and the gas heating units disposed on the liquid channel plate face the gas-liquid interface plate 1. Thus, a triple heating unit structure with gas heating units disposed above and below the liquid heating unit is achieved, thereby realizing a multi-stage gas-liquid circulation heating mode. The gas heating unit 400 is formed by introducing heating gas into the gas channels disposed on the gas channel plate 3 and / or the liquid channel plate 2.

[0055] The air passages are arranged in a spiral structure, and the distance between the air passages is greater than the distance between the liquid passages.

[0056] The gas heating unit 400 is disposed above the liquid heating unit 300 or the gas heating unit 400 covers the liquid heating unit 300 above and below.

[0057] In this embodiment, the liquid channel plate 2 is connected to the upper surface of the gas-liquid channel interface plate 1 by vacuum brazing, the gas channel plate 3 is connected to the upper surface of the liquid channel plate 2 by vacuum brazing, and the support plate 4 is connected to the upper surface of the gas channel plate 3 by vacuum brazing.

[0058] The gas-liquid interface plate 1 includes an upper interface plate surface 10 and a lower interface plate surface 11. A lower plate groove 12 is provided on the lower interface plate surface 11. The lower plate groove 12 is arranged in a ring groove structure from the center of the lower interface plate surface 11 outward. The groove wall of the lower plate groove 12 and the lower interface plate surface 11 form a lower ring surface 13. A central boss 14 is concentrically arranged inside the lower plate groove 12 and the interface plate. A radial boss 15 is integrally arranged radially with the central boss 14. The width of the radial boss 15 is smaller than the diameter of the central boss 14. A first liquid channel port 16 is arranged at the center of the central boss 14, which is connected to the upper and lower plates of the gas-liquid channel interface plate 1. A second liquid channel port 17 is arranged at the end of the radial boss 15 away from the center of the interface plate. The first liquid channel port 16 and the second liquid channel port 17 are on the same diameter. The first liquid channel port 16 can be a liquid channel inlet or a liquid channel outlet. The second liquid channel port 17 can be a liquid channel outlet or a liquid channel inlet.

[0059] A first airway 18 is provided on the side of the central boss 14 that is offset from the radial boss 15. A second airway 19 is provided on the lower annular surface 13 in the radial direction of the first airway 18. The first airway 18 and the second airway 19 are not on the same diameter, and the second airway 19 is located close to the edge of the lower annular surface 13. The first airway 18 can be an airway inlet or an airway outlet, and the second airway 19 can be an airway outlet or an airway inlet.

[0060] In use, when the first liquid port 16 is set as the liquid port inlet, the second liquid port 17 is set as the liquid port outlet. At this time, the first air port 18 is set as the air port outlet, and the second air port 19 is set as the air port inlet, so that the circulation directions of the liquid port and the air port move relative to each other.

[0061] The thickness of the gas-liquid interface plate 1 is 14mm to 16mm.

[0062] The liquid channel plate 2 includes a lower plate surface 20 and an upper plate surface 21. A liquid channel 22 is provided on the upper plate surface 21. The liquid channel 22 is arranged in a spiral structure outwards along the center of the liquid channel plate 2, and the liquid channels at the edge of the liquid channel plate 2 are arranged in a zigzag loop structure. Inside the liquid channel 22, corresponding to the first liquid channel opening 16 and the second liquid channel opening 17 on the gas-liquid interface plate 1, a first liquid port 23 and a second liquid port 24 are provided. A first gas port 25 is provided on the annular surface of the liquid channel 22 near the first liquid port 23, corresponding to the first gas channel opening 18. A second gas port 26 is provided at the edge of the liquid channel plate 2, corresponding to the second gas channel opening 19.

[0063] The lower surface 20 of the liquid channel tray is provided with liquid channel tray air passages 27. These air passages 27 are arranged in an approximately irregular spiral structure, starting from the first air port 25 and the second air port 26. The spacing between the spiral air passages 27 is greater than the spacing between the liquid channels 22. The depth of each air passage 27 is less than the groove depth of the liquid channel 22. The width between the air passages 27 near the first air port 25 is greater than the width between the air passages 27 near the second air port 26.

[0064] The thickness of the liquid channel plate 2 is 20mm to 22mm.

[0065] The liquid heating unit 300 has an inlet and an outlet formed by a first liquid channel 16 and a first liquid port 23 connected vertically, and an outlet and an outlet formed by a second liquid channel 17 and a second liquid port 24 connected vertically.

[0066] The gas passage plate 3 includes an upper plate surface 30 and a lower plate surface 31. The gas passage plate 31 has a first gas passage port 32 and a second gas passage port 33 that connect the upper and lower plates. The upper plate surface 30 has a gas passage 34, which is arranged in a generally irregular rotating structure between the first and second gas passage ports 32 and 33 to allow heating gas to pass through and achieve gas heating. The lower plate surface is horizontal and is used for vacuum brazing connection with the liquid passage plate.

[0067] The air passage 34 of the air passage plate and the air passage 37 of the liquid passage plate respectively constitute the air passages for the heating gas in the gas heating unit 400.

[0068] The gas heating unit 400 has an air inlet or outlet formed by a first air passage 18, a first air port 25 and a first air passage plate air port 32 that are interconnected from bottom to top, and an air outlet or inlet formed by a second air passage 19, a second air port 26 and a second air passage plate air port 33 that are interconnected from top to bottom.

[0069] The support disk 4 includes a support disk body 40 and support protrusions 41 disposed on the support disk body 40. Multiple support protrusions 41 are evenly distributed and all support protrusions 41 have the same height. Each support protrusion 41 protrudes 0.1mm to 0.14mm from the surface of the support disk body 40. The support protrusions 41 undergo hard anodizing, forming an Al2O3 (alumina) ceramic oxide layer 42 on the surface of the multiple support protrusions 41. This ceramic oxide layer 42 increases the hardness of the support protrusions 41, preventing the risk of particulate matter generation due to contact and friction with the wafer during long-term operation, thereby avoiding wafer contamination accidents.

[0070] The support disk body 40 forms a uniform heating unit with a dual gas-liquid circulation channel, and all the support protrusions 41 form oxide support units. This wafer support disk structure offers superior performance and lower cost. The support protrusions 41 and the support disk body 40 are manufactured as a single unit, reducing resource waste caused by machining tolerances. It saves on the cost of using and machining sapphire or ceramic pillars. Furthermore, the oxide treatment of the outer surface of the support protrusions 41 increases their hardness, preventing the generation of particulate matter due to friction between the wafer and the support protrusions 41 during use, thus ensuring wafer cleanliness.

[0071] The dual-circulation gas-liquid heating unit eliminates the need for a single water circulation system to heat the entire surface of the support plate 4. Instead, it utilizes a dual-circulation gas-liquid system to ensure uniform heating. This avoids the problems associated with single-circulation heating, where the temperature difference between the inlet and outlet of the water body is significant due to the length of the liquid channel and the water flow rate, resulting in uneven temperature distribution on the support plate surface.

[0072] The gas-liquid dual-circulation channel uniform heating unit is simultaneously heated by both gas circulation and water circulation. Moreover, the water circulation heating and gas circulation heating adopt relative motion. The temperature difference caused by the length of the water circulation channel and the influence of water flow speed is supplemented by the reverse-moving gas circulation for heating. The water circulation and gas circulation complement each other, realizing uniform heat transfer of the heating unit, thereby achieving uniform setting of wafer heating.

[0073] The liquid channel plate 2 and the air channel plate 3 are connected by vacuum brazing. The air channel plate 3 is above the liquid channel plate 2. Since the water circulation heating effect is better than the air circulation, the water circulation is placed below the air circulation. In this way, the air circulation can more effectively complement the temperature loss caused by the water circulation process, so that the temperature of the entire plate surface is uniform.

[0074] The support disk 4 is located at the top of the gas-liquid dual-circulation wafer support disk, which can better support the wafer. The oxide support unit of the support disk 4 no longer uses the machining of vertical pillar holes and the addition of sapphire pillars or ceramic pillars to achieve support. Instead, multiple support bosses 41 are integrally machined on the disk surface. The support bosses 41 have the same height, and the support surface formed by all the support bosses 41 forms an integral boss surface, which can be regarded as the same plane. When the robot transfers the wafer to the support disk, all the support bosses will support the wafer, so that the wafer can be supported more stably and the surface will not have defects such as tilting.

[0075] Example 3: exist Figure 8 , Figure 9 , Figure 10In the embodiment shown, a gas-liquid dual-circulation wafer support disk includes a support disk body 100 and a support unit 200 integrally disposed on the support disk body 100. The support disk body 100 is provided with a liquid heating unit 300 and a gas heating unit 400, and the heating circulation directions of the liquid heating unit 300 and the gas heating unit 400 are arranged opposite to each other.

[0076] The support plate body 100 is provided with a liquid inlet / outlet communicating with the liquid heating unit 300 and a gas inlet / outlet communicating with the gas heating unit 400, and the liquid inlet / outlet and the gas inlet / outlet are offset.

[0077] The main body 100 of the support plate includes a gas-liquid interface plate 1, a liquid channel plate 2, a gas channel plate 3 and a support plate 4 connected by vacuum brazing. The gas-liquid interface plate 1, the liquid channel plate 2, the gas channel plate 3 and the support plate 4 are stacked sequentially from bottom to top.

[0078] The liquid heating unit 300 is disposed on the liquid channel plate 2, and is formed by introducing heating liquid into the liquid channel 22 disposed on the liquid channel plate 2.

[0079] The liquid channel 22 includes a spiral liquid channel 22-1 and a reversing liquid channel 22-2 connected to the spiral liquid channel 22-1. The spiral liquid channel 22-1 is arranged outward from the center of the liquid channel plate 2 in a spiral structure. The reversing liquid channel 22-2 is arranged at the edge of the liquid channel plate 2 in a reciprocating circulation structure.

[0080] In this embodiment, the gas heating units 400 are respectively disposed on the gas channel plate 3 and the liquid channel plate 2, and the gas heating units disposed on the gas channel plate face the liquid channel plate, and the gas heating units disposed on the liquid channel plate face the gas channel plate, thereby forming a dual gas heating unit structure above the liquid heating unit, thereby realizing a multi-gas-liquid circulation heating mode.

[0081] The gas heating unit 400 is formed by introducing heating gas into the gas passage provided on the gas passage plate 3 and / or the liquid passage plate 2.

[0082] The air passages are arranged in a spiral structure, and the distance between the air passages is greater than the distance between the liquid passages.

[0083] The gas heating unit 400 is disposed above the liquid heating unit 300 or the gas heating unit 400 covers the liquid heating unit 300 above and below.

[0084] In this embodiment, the liquid channel plate 2 is connected to the upper surface of the gas-liquid channel interface plate 1 by vacuum brazing, the gas channel plate 3 is connected to the upper surface of the liquid channel plate 2 by vacuum brazing, and the support plate 4 is connected to the upper surface of the gas channel plate 3 by vacuum brazing.

[0085] The gas-liquid interface plate 1 includes an upper interface plate surface 10 and a lower interface plate surface 11. A lower plate groove 12 is provided on the lower interface plate surface 11. The lower plate groove 12 is arranged in a ring groove structure from the center of the lower interface plate surface 11 outward. The groove wall of the lower plate groove 12 and the lower interface plate surface 11 form a lower ring surface 13. A central boss 14 is concentrically arranged inside the lower plate groove 12 and the interface plate. A radial boss 15 is integrally arranged radially with the central boss 14. The width of the radial boss 15 is smaller than the diameter of the central boss 14. A first liquid channel port 16 is arranged at the center of the central boss 14, which is connected to the upper and lower plates of the gas-liquid channel interface plate 1. A second liquid channel port 17 is arranged at the end of the radial boss 15 away from the center of the interface plate. The first liquid channel port 16 and the second liquid channel port 17 are on the same diameter. The first liquid channel port 16 can be a liquid channel inlet or a liquid channel outlet. The second liquid channel port 17 can be a liquid channel outlet or a liquid channel inlet.

[0086] A first airway 18 is provided on the side of the central boss 14 that is offset from the radial boss 15. A second airway 19 is provided on the lower annular surface 13 in the radial direction of the first airway 18. The first airway 18 and the second airway 19 are not on the same diameter, and the second airway 19 is located close to the edge of the lower annular surface 13. The first airway 18 can be an airway inlet or an airway outlet, and the second airway 19 can be an airway outlet or an airway inlet.

[0087] In use, when the first liquid port 16 is set as the liquid port inlet, the second liquid port 17 is set as the liquid port outlet. At this time, the first air port 18 is set as the air port outlet, and the second air port 19 is set as the air port inlet, so that the circulation directions of the liquid port and the air port move relative to each other.

[0088] The thickness of the gas-liquid interface plate 1 is 14mm to 16mm.

[0089] The liquid channel plate 2 includes a lower plate surface 20 and an upper plate surface 21. A liquid channel 22 is provided on the lower plate surface 20. The liquid channel 22 is arranged in a spiral structure outwards along the center of the liquid channel plate 2, and the liquid channels at the edge of the liquid channel plate 2 are arranged in a zigzag loop structure. A first liquid port 23 and a second liquid port 24 are provided inside the liquid channel 22 corresponding to the first liquid port 16 and the second liquid port 14 on the gas-liquid interface plate 1. A first gas port 25 is provided on the annular surface of the liquid channel 22 near the first liquid port 23, corresponding to the first gas port 18. A second gas port 26 is provided at the edge of the liquid channel plate 2, corresponding to the second gas port 19.

[0090] The upper surface 21 of the liquid channel plate is provided with liquid channel plate air passages 27. These air passages 27 are arranged in an approximately irregular spiral structure, starting from the first air port 25 and the second air port 26. The spacing between the spiral air passages 27 is greater than the spacing between the liquid channels 22. The depth of each air passage 27 is less than the groove depth of the liquid channel 22. The width between the air passages 27 near the first air port 25 is greater than the width between the air passages 27 near the second air port 26.

[0091] The thickness of the liquid channel plate 2 is 20mm to 22mm.

[0092] The liquid heating unit 300 has an inlet and an outlet formed by a first liquid channel 16 and a first liquid port 23 connected vertically, and an outlet and an outlet formed by a second liquid channel 17 and a second liquid port 24 connected vertically.

[0093] The gas passage plate 3 includes an upper plate surface 30 and a lower plate surface 31. A first gas passage port 32 and a second gas passage port 33 are provided on the gas passage plate 3, connecting the upper and lower plates of the gas passage plate 2. A gas passage 34 is provided on the lower plate surface 31. The gas passage 34 is arranged in a generally irregular rotating structure between the first and second gas passage ports 32 and 33. The gas passage 34 and the liquid passage plate 27 are vertically offset, thus forming an interleaved gas channel between the gas passage plate 3 and the liquid passage plate 2, allowing heating gas to pass through and achieving the purpose of gas heating. The upper plate surface of the gas passage plate is horizontally oriented for vacuum brazing connection with the support plate.

[0094] The air passage 34 of the air passage plate and the air passage 27 of the liquid passage plate respectively constitute the air passages for the heating gas in the gas heating unit 400.

[0095] The gas heating unit 400 has an air inlet or outlet formed by a first air passage 18, a first air port 25 and a first air passage plate air port 32 that are interconnected from bottom to top, and an air outlet or inlet formed by a second air passage 19, a second air port 26 and a second air passage plate air port 33 that are interconnected from top to bottom.

[0096] The support disk 4 includes a support disk body 40 and support protrusions 41 disposed on the support disk body 40. Multiple support protrusions 41 are evenly distributed and all support protrusions 41 have the same height. Each support protrusion 41 protrudes 0.1mm to 0.14mm from the surface of the support disk body 40. The support protrusions 41 undergo hard anodizing, forming an Al2O3 (alumina) ceramic oxide layer 42 on the surface of the multiple support protrusions 41. This ceramic oxide layer 42 increases the hardness of the support protrusions 41, preventing the risk of particulate matter generation due to contact and friction with the wafer during long-term operation, thereby avoiding wafer contamination accidents.

[0097] The support disk body 40 forms a uniform heating unit with a dual gas-liquid circulation channel, and all the support protrusions 41 form oxide support units. This wafer support disk structure offers superior performance and lower cost. The support protrusions 41 and the support disk body 40 are manufactured as a single unit, reducing resource waste caused by machining tolerances. It saves on the cost of using and machining sapphire or ceramic pillars. Furthermore, the oxide treatment of the outer surface of the support protrusions 41 increases their hardness, preventing the generation of particulate matter due to friction between the wafer and the support protrusions 41 during use, thus ensuring wafer cleanliness.

[0098] The dual-circulation gas-liquid heating unit eliminates the need for a single water circulation system to heat the entire surface of the support plate 4. Instead, it utilizes a dual-circulation gas-liquid system to ensure uniform heating. This avoids the problems associated with single-circulation heating, where the temperature difference between the inlet and outlet of the water body is significant due to the length of the liquid channel and the water flow rate, resulting in uneven temperature distribution on the support plate surface.

[0099] The gas-liquid dual-circulation channel uniform heating unit is simultaneously heated by both gas circulation and water circulation. Moreover, the water circulation heating and gas circulation heating adopt relative motion. The temperature difference caused by the length of the water circulation channel and the influence of water flow speed is supplemented by the reverse-moving gas circulation for heating. The water circulation and gas circulation complement each other, realizing uniform heat transfer of the heating unit, thereby achieving uniform setting of wafer heating.

[0100] The liquid channel plate 2 and the air channel plate 3 are connected by vacuum brazing. The air channel plate 3 is above the liquid channel plate 2. Since the water circulation heating effect is better than the air circulation, the water circulation is placed in the middle of the air circulation. In this way, the air circulation can more effectively complement the temperature loss caused by the water circulation process, so that the temperature of the entire plate surface is uniform.

[0101] The support disk 4 is located at the top of the gas-liquid dual-circulation wafer support disk, which can better support the wafer. The oxide support unit of the support disk 4 no longer uses the machining of vertical pillar holes and the addition of sapphire pillars or ceramic pillars to achieve support. Instead, multiple support bosses 41 are integrally machined on the disk surface. The support bosses 41 have the same height, and the support surface formed by all the support bosses 41 forms an integral boss surface, which can be regarded as the same plane. When the robot transfers the wafer to the support disk, all the support bosses will support the wafer, so that the wafer can be supported more stably and the surface will not have defects such as tilting.

[0102] The method for (high-temperature) chemical deposition on a wafer using the gas-liquid dual-circulation wafer support disk described in the above embodiments includes the following steps: Step 1: Place the gas-liquid dual-circulation wafer support disk inside the vacuum chamber of the high-temperature chemical deposition apparatus and connect it to the external heating liquid pipeline and heating gas pipeline; Step 2: The wafer to be chemically deposited is transferred to the support unit of the support tray by a robotic arm, so that the wafer is always kept horizontal. During the placement process, the robotic arm can place the wafer smoothly, avoiding the offset or tilt caused by the support points not being on the same plane after placement.

[0103] Step 3: Evacuate the vacuum chamber; Step 4: Turn on the heating liquid and heating gas, start the liquid heating unit to circulate the gas, and simultaneously start the gas heating unit to circulate the gas, maintaining the gas circulation direction relative to the liquid circulation direction. This allows for high-temperature chemical deposition processing of the wafer, forming a uniform thin film on the wafer. This support pad makes the process smoother and reduces the product defect rate.

[0104] The gas-liquid dual-circulation wafer support disk described in the above embodiment heats the support disk through gas and liquid circulation, achieving a uniform temperature design on the disk surface. Multiple disks are vacuum brazed together, ensuring the stability of the entire heating and support unit. Multiple support bosses are integrally formed on the support disk, avoiding the defect of multiple support points not being on the same plane. The addition of gas circulation compensates for the heat loss generated during water circulation. With the complementary effects of gas and water circulation, the problem of localized temperature unevenness on the support disk surface is effectively solved, reducing film thickness unevenness caused by temperature inconsistencies during high-temperature chemical deposition of the wafer, resulting in a significant improvement in wafer processing yield and quality. The integrally formed support bosses on the support disk are more cost-effective and efficient than existing solutions that use sapphire or ceramic pillars as support surfaces, avoiding product damage and errors caused by manual assembly. Since the support points are integrally machined, there is no risk of loosening or detachment of the support points during long-term operation, unlike sapphire or ceramic pillars.

[0105] The embodiments described in this specification are merely examples of implementations of the inventive concept. The scope of protection of this invention should not be considered as limited to the specific forms stated in the embodiments. The scope of protection of this invention also extends to equivalent technical means that can be conceived by those skilled in the art based on the inventive concept.

Claims

1. A gas-liquid dual cycle wafer support disk, characterized by: It includes a support plate body (100) and a support unit (200) integrally disposed on the support plate body (100). The support plate body (100) is provided with a liquid heating unit (300) and a gas heating unit (400). The heating circulation directions of the liquid heating unit (300) and the gas heating unit (400) are arranged opposite to each other. The main body of the support plate includes a gas-liquid interface plate (1), a liquid channel plate (2), a gas channel plate (3) and a support plate (4) stacked sequentially from bottom to top. The support unit is formed by several support bosses evenly distributed on the upper surface of the support plate; The liquid heating unit is mounted on the liquid channel plate, and the liquid heating unit is formed by introducing heating liquid into the liquid channel mounted on the liquid channel plate; The gas heating unit is installed on the gas channel plate and / or the liquid channel plate. The gas heating unit is formed by introducing heating gas into the gas channel installed on the gas channel plate and / or the liquid channel plate.

2. The gas-liquid binary cycle wafer support disc according to claim 1, characterized in that: The gas-liquid interface plate (1), liquid channel plate (2), gas channel plate (3) and support plate (4) are connected as one unit by vacuum brazing.

3. The gas-liquid binary cycle wafer support disc according to claim 2, characterized in that: The support boss (41) and the support plate (4) are integrally manufactured. The exterior of the support boss (41) is formed with a ceramic material oxide layer (42) through hard anodizing.

4. The gas-liquid binary cycle wafer support disc according to claim 1, characterized in that: The liquid channel (22) includes a spiral liquid channel (22-1) and a reversing liquid channel (22-2) connected to the spiral liquid channel (22-1). The spiral liquid channel (22-1) is arranged outward from the center of the liquid channel plate (2) in a spiral structure. The reversing liquid channel (22-2) is arranged at the edge of the liquid channel plate (2) in a reciprocating circulation structure.

5. The gas-liquid dual-circulation wafer support disk according to claim 1, characterized in that: The air passages are arranged in a spiral structure, and the distance between the air passages is greater than the distance between the liquid passages.

6. The gas-liquid dual-circulation wafer support disk according to any one of claims 1 to 5, characterized in that: The gas heating unit (400) is disposed above the liquid heating unit (300) or the gas heating unit (400) covers the liquid heating unit (300) above and below.

7. The gas-liquid dual-circulation wafer support disk according to any one of claims 1 to 5, characterized in that: The support plate body (100) is provided with a liquid inlet / outlet that connects to the liquid heating unit (300) and a gas inlet / outlet that connects to the gas heating unit (400), and the liquid inlet / outlet and the gas inlet / outlet are offset.

8. A method for chemical deposition on a wafer using a gas-liquid dual-circulation wafer support disk as described in any one of claims 1 to 7, characterized in that... Includes the following steps: Step 1: Place the gas-liquid dual-circulation wafer support disk inside the vacuum chamber of the high-temperature chemical deposition apparatus and connect it to the external heating liquid pipeline and heating gas pipeline; Step 2: The wafer to be chemically deposited is transferred to the support unit of the support tray by a robotic arm, so that the wafer is always kept horizontal; Step 3: Evacuate the vacuum chamber; Step 4: Turn on the heating liquid and heating gas, start the liquid heating unit to circulate it, and at the same time start the gas heating unit to circulate the gas, keeping the gas circulation direction relative to the liquid circulation direction, to perform high-temperature chemical deposition processing on the wafer to form a uniform thin film on the wafer.

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