Semiconductor coupled radiant heating / cooling device and design calculation method

Abstract

The application relates to the technical field of energy supply, and discloses a semiconductor-coupled radiation heating / cooling device, which comprises a medium layer, the medium layer comprises a plurality of spaced and parallel arranged pipelines and a semiconductor refrigeration element, a heating / cooling medium is supplied into the pipelines, upper and lower uniform heating plates are arranged on the upper and lower sides of the medium layer respectively and are connected with the semiconductor refrigeration element; and a surface layer is arranged on the top of the upper uniform heating plate. The application has the beneficial effect that on the basis of the traditional radiation heating / cooling mode, the semiconductor refrigeration element is coupled to further increase or decrease the temperature and realize high-precision temperature regulation.

Description

Technical Field

[0001] This invention relates to the field of energy supply technology, specifically a semiconductor coupled radiation heating / cooling device and its functional method. Background Technology

[0002] Radiant cooling / heating is a heating / cooling method that relies on heat exchange surfaces with radiant heat exchange as the primary heat exchange mechanism. Existing radiant systems mostly use water or refrigerant as the medium, and some also have a filling layer. Due to the large system capacity, the response is slow, and there is a significant lag in adjustment, making timely and high-precision temperature control difficult.

[0003] This is disadvantageous in many situations, such as when the system heats up / cools down slowly in the initial stage of operation, and most systems are only suitable for continuous operation. When controlling anti-condensation in cooling conditions through medium parameters, it takes a long time from the detection of condensation risk to the completion of surface temperature adjustment. Therefore, a higher dew point temperature must be set, and a larger safety margin must be used to prevent condensation. As a result, the temperature of the cooling medium needs to be set higher in summer, which affects the cooling capacity.

[0004] Dry radiant heating can achieve rapid heating and has high temperature control accuracy, but this system is only suitable for heating and cannot be used for cooling.

[0005] Besides slow system response and low temperature control accuracy, traditional radiant cooling / heating systems use a single loop as a partition, with parameters identical within the same loop area, making it impossible to perform temperature control in smaller partitions.

[0006] Existing Chinese invention patent CN202210543479.8 discloses a radiant panel air conditioning system utilizing semiconductor-based chilled water production. This system produces chilled water using semiconductor refrigeration, then covers the surface of the chilled water pipes with a radiant panel, utilizing the low temperature of the radiant panel surface to achieve a cooling effect. This method uses direct semiconductor refrigeration, resulting in low cooling efficiency. Furthermore, using semiconductor-based chilled water production and then utilizing it for radiant cooling involves multiple heat exchange processes, leading to heat loss and failing to significantly improve the radiant cooling effect. Moreover, this technology only mentions the cooling effect, not the heating effect.

[0007] Chinese invention patent CN202321337421.4 discloses a cascade refrigeration system coupling thermoelectric refrigeration and vapor compression refrigeration, which includes a vapor compression refrigeration module and a thermoelectric refrigeration module. The vapor compression refrigeration module cools the cold storage through processes such as heat absorption by the evaporator. The condenser in the vapor compression refrigeration module exchanges heat with the cold surface of the semiconductor refrigeration element in the thermoelectric refrigeration module, while the hot surface of the semiconductor refrigeration element releases heat into the environment. This system is a cascade system of compression refrigeration and semiconductor refrigeration, with compression refrigeration at the low-temperature stage and semiconductor refrigeration at the high-temperature stage. The heat absorption of semiconductor refrigeration equals the heat release of the condenser in the compression refrigeration system, limiting its efficiency and capacity. The temperature control accuracy on the evaporator side is limited by compression refrigeration, resulting in a disadvantage in both aspects. The system is mainly used for refrigeration and can achieve a large temperature difference, but it does not disclose how to switch between hot and cold modes. Summary of the Invention

[0008] To address the shortcomings of existing technologies, this invention provides a semiconductor-coupled radiative heating / cooling device. Based on the traditional radiative heating / cooling mode, a semiconductor cooling element is coupled to further heat up or cool down the device and achieve high-precision temperature control.

[0009] To achieve the above objectives, the present invention adopts the following solution:

[0010] According to one aspect of the present invention, a semiconductor coupled radiation heating / cooling device is provided, comprising a dielectric layer, the dielectric layer comprising a plurality of parallel pipes spaced apart and a semiconductor cooling element, wherein a heating / cooling medium flows through the pipes, and an upper heat spreader and a lower heat spreader are respectively provided on the upper and lower sides of the dielectric layer, both of which are connected to the semiconductor cooling element; a surface layer is provided on the top of the upper heat spreader.

[0011] Furthermore, an insulation layer is provided at the bottom of the lower heat spreader.

[0012] Furthermore, the pipe is a flat pipe.

[0013] Furthermore, the semiconductor cooling element can be of any shape.

[0014] Furthermore, the semiconductor cooling element is disposed at any position in the dielectric layer.

[0015] According to another aspect of the present invention, a design calculation method is provided, which designs according to cooling conditions and verifies heating conditions, comprising the following steps:

[0016] S1. Design parameters and calculation formulas for traditional radiant heating / cooling systems;

[0017] S2. Design Calculation Process:

[0018] S3. Determine the cooling capacity of the semiconductor refrigeration element;

[0019] S4. Heating operation condition verification.

[0020] Furthermore, the design parameters in S1 include:

[0021] Using the indoor operating temperature as the indoor design temperature, the operating temperature t0 is defined by formula (1) or formula (2):

[0022]

[0023] In Figure (1), t is the average radiation temperature; a air temperature; h r h is the radiative heat transfer coefficient. c The convective heat transfer coefficient;

[0024] Since the radiative heat transfer coefficient and the convective heat transfer coefficient are roughly equivalent under normal conditions, the average of the air temperature and the mean radiant temperature is often used to represent the operating temperature, i.e.:

[0025]

[0026] The operating temperature range for radiant cooling is 26–28℃, and 24–26℃ can be used when higher requirements are placed on the indoor environment.

[0027] Average indoor unheated / cold surface temperature t w It can be calculated based on the same temperature as the air.

[0028] The parameters also include: average medium temperature t m Surface layer thickness δ, surface layer thermal conductivity λ, surface emission ε;

[0029] The specific calculation formula in S1 is as follows:

[0030] The cooling capacity supplied to a room by a radiant panel consists of both radiation and convection.

[0031] Q = Q f +Q d (3)

[0032] In equation (3), Q f Q represents the radiant heat transfer between the radiant panel and the indoor non-heated / cooled surfaces. d This is for convective heat exchange between the surface layer and the indoor air;

[0033]

[0034] In equation (4), A is the area of ​​the radiating plate; t pj t represents the temperature of the radiant plate. wε represents the indoor unheated / cooled surface temperature; ε represents the surface emissivity.

[0035] Q d =h×A×|t a -t pj | (5)

[0036] In equation (5), h is the convective heat transfer coefficient, which can be determined according to empirical formulas in heat transfer. However, when selecting the formula, attention should be paid to whether the radiant plate is horizontal or vertical, and the direction of heat flow.

[0037] Heat exchange through the surface layer:

[0038]

[0039] In equation (6), A is the area of ​​the radiating plate; t pj t represents the temperature of the radiant plate. j λ is the temperature of the heat spreader; λ is the thermal conductivity of the surface layer; δ is the thickness of the surface layer.

[0040] Formula for calculating the heat of the medium:

[0041] Q r =c P ×G×Δt (7)

[0042] In equation (7), c P Δt is the specific heat; G is the mass flow rate; Δt is the temperature difference between the inlet and outlet of the medium.

[0043] Furthermore, the design calculation process in S2 is as follows:

[0044] S21. Determine the surface temperature t of the radiant panel based on the indoor design parameters. pj ;

[0045] S22. Based on the average temperature of the indoor non-heated / cooled surfaces and the surface temperature of the radiant panel, calculate the theoretical cooling capacity Q' using formulas (3)(4)(5). The theoretical cooling capacity includes both radiative heat transfer and convective heat transfer.

[0046] S23. Based on the surface layer thickness and thermal conductivity, calculate the temperature of the heat exchange layer using formula (6). This temperature is approximately equal to the average temperature t of the medium. m ;

[0047] S24. Set the inlet and outlet temperature difference Δt of the medium, 2℃ < Δt < 5℃, and the inlet temperature is... The outlet temperature is Calculate the medium flow rate G according to formula (7);

[0048] S25. Combine experimental or numerical simulation methods to determine the pipe size, length and pipe spacing, and obtain surface temperature distribution data, as well as the medium outlet temperature under given inlet temperature conditions;

[0049] S26. Adjust the thickness of the heat spreader plate according to the surface temperature uniformity of the radiant plate, so that the maximum temperature difference between the surfaces of the radiant plates above adjacent pipes is within 2℃, and check the heat change of the medium inlet and outlet and the balance between the heat transfer between the radiant plate and the room.

[0050] Furthermore, the method for determining the cooling capacity of the semiconductor refrigeration element in S3 is as follows:

[0051] Based on the surface layer thickness and thermal conductivity, and the average temperature of the unheated / cooled surfaces in the room, calculate the actual cooling capacity Q corresponding to the inlet and outlet temperatures, respectively. i Q o The difference between the two cooling capacities is the cooling capacity Q1 required to eliminate the non-uniformity;

[0052] Based on the radiant panel surface temperature decrease of 2℃ obtained in S21, the cooling capacity Q” is recalculated. The difference Q2 between Q” and the theoretical cooling capacity Q’ is the cooling capacity required for temperature control.

[0053] Furthermore, the heating condition verification method in S4 is as follows:

[0054] The operating temperature range for radiant heating can be 18–22℃, and 22–24℃ can be used when higher requirements are placed on the indoor environment.

[0055] If there is no need for temperature control, the same design method as traditional radiant heating systems can be adopted to check system parameters without considering the role of semiconductor refrigeration elements.

[0056] If temperature control is required, the heating amount of the semiconductor cooling element operating in reverse needs to be deducted from the total heat supply, and then the medium temperature is calculated. The medium temperature should be lower than that of the traditional radiant heating system, and the temperature difference should be controlled within 0 to 5℃.

[0057] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0058] 1. Based on the traditional radiant heating / cooling mode, this invention incorporates a semiconductor cooling element, which can significantly improve the response speed of the radiant system to load changes, provide high temperature control accuracy, and achieve effective anti-condensation regulation in cooling mode.

[0059] 2. This device inherits the high energy efficiency of traditional radiant heating / cooling systems. The system's energy efficiency is far higher than that of a standalone semiconductor refrigeration system. The medium can use lower heating temperatures and higher cooling temperatures, which can further improve its energy efficiency.

[0060] 3. Different load ratios can be set as needed. When the semiconductor cooling load ratio is small, the system has high energy efficiency and is suitable for fine-tuning the temperature. When the semiconductor cooling load ratio is large, some energy efficiency will be sacrificed, but the temperature range is wide and the environmental adaptability is stronger.

[0061] 4. A single unit can simultaneously provide heating and cooling functions and can quickly switch between operating conditions.

[0062] 5. This invention effectively solves the problem of uneven surface temperature of radiant panels and the resulting reduction in cooling capacity. Attached Figure Description

[0063] Figure 1 This is a schematic diagram of the structure of the present invention;

[0064] Figure 2 This is a schematic diagram of the pipe and semiconductor refrigeration element structure of the present invention.

[0065] The labels in the attached diagram are: 1. Insulation layer; 2. Pipe; 3. Lower heat spreader; 4. Upper heat spreader; 5. Semiconductor cooling element; 6. Surface layer. Detailed Implementation

[0066] The present invention will be further described in conjunction with specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be understood that after reading the teachings of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined in this application.

[0067] Example 1:

[0068] A semiconductor coupled radiative heating / cooling device includes a dielectric layer comprising a plurality of parallel, spaced-apart pipes 2 and a semiconductor cooling element 5. A heating / cooling medium flows through the pipes 2. An upper heat spreader 4 and a lower heat spreader 3 are respectively disposed on the upper and lower sides of the dielectric layer and connected to the semiconductor cooling element 5. A surface layer 6 is disposed on the top of the upper heat spreader 4. The heating / cooling medium flowing through the pipes transfers heat / cold energy to the upper and lower heat spreaders through the pipe walls and radiates heat outward through the surface layer in contact with the upper heat spreader. The hot and cold surfaces of the semiconductor cooling element are respectively connected to the upper and lower heat spreaders for temperature regulation.

[0069] The bottom of the lower heat spreader 3 is provided with a heat insulation layer 1.

[0070] The pipe 2 can be a microchannel flat pipe or a conventional copper pipe. In this embodiment, the pipe 2 is preferably a flat pipe.

[0071] Furthermore, the semiconductor cooling element 5 can be of any shape, and the semiconductor cooling element 5 can be positioned at any location in the dielectric layer, that is, at any location between two adjacent pipes. The arrangement of the semiconductor cooling element is flexible, and it can be divided into areas of any shape and area for zoned temperature regulation, which is especially suitable for occasions with obvious internal and external zones and other uneven load requirements.

[0072] Example 2; A design calculation method for a semiconductor coupled radiation heating / cooling device. This method designs for cooling operation and verifies for heating operation, using the following steps:

[0073] S1. Design parameters and calculation formulas for traditional radiant heating / cooling systems;

[0074] S2. Design Calculation Process:

[0075] S3. Determine the cooling capacity of the semiconductor refrigeration element;

[0076] S4. Heating operation condition verification.

[0077] The design parameters in S1 include:

[0078] Using the indoor operating temperature as the indoor design temperature, the operating temperature t0 is defined by formula (1) or formula (2):

[0079]

[0080] In Figure (1), t is the average radiation temperature; a air temperature; h r h is the radiative heat transfer coefficient. c The convective heat transfer coefficient;

[0081] Since the radiative heat transfer coefficient and the convective heat transfer coefficient are roughly equivalent under normal conditions, the average of the air temperature and the mean radiant temperature is often used to represent the operating temperature, i.e.:

[0082]

[0083] The operating temperature range for radiant cooling is 26–28℃, and 24–26℃ can be used when higher requirements are placed on the indoor environment.

[0084] Average indoor unheated / cold surface temperature t w It can be calculated based on the same temperature as the air.

[0085] The parameters also include: average medium temperature t m Surface layer thickness δ, surface layer thermal conductivity λ, surface emission ε;

[0086] The specific calculation formula in S1 is as follows:

[0087] The cooling capacity supplied to a room by a radiant panel consists of both radiation and convection.

[0088] Q = Q f +Q d (3)

[0089] In equation (3), Q f Q represents the radiant heat transfer between the radiant panel and the indoor non-heated / cooled surfaces. d This is for convective heat exchange between the surface layer and the indoor air;

[0090]

[0091] In equation (4), A is the area of ​​the radiating plate; t pj t represents the temperature of the radiant plate. w ε represents the indoor unheated / cooled surface temperature; ε represents the surface emissivity.

[0092] Q d =h×A×|t a -t pj | (5)

[0093] In equation (5), h is the convective heat transfer coefficient, which can be determined according to empirical formulas in heat transfer. However, when selecting the formula, attention should be paid to whether the radiant plate is horizontal or vertical, and the direction of heat flow.

[0094] Heat exchange through the surface layer:

[0095]

[0096] In equation (6), A is the area of ​​the radiating plate; t pj t represents the temperature of the radiant plate. j λ is the temperature of the heat spreader; λ is the thermal conductivity of the surface layer; δ is the thickness of the surface layer.

[0097] Formula for calculating the heat of the medium:

[0098] Q r =c P ×G×Δt (7)

[0099] In equation (7), c P Δt is the specific heat; G is the mass flow rate; Δt is the temperature difference between the inlet and outlet of the medium.

[0100] Specifically, the design calculation process in S2 is as follows:

[0101] S21. Determine the surface temperature t of the radiant panel based on the indoor design parameters. pj (3-5°C above the air dew point temperature);

[0102] S22. Based on the average temperature of the indoor non-heated / cooled surfaces and the surface temperature of the radiant panel, calculate the theoretical cooling capacity Q' using formulas (3)(4)(5). The theoretical cooling capacity includes both radiative heat transfer and convective heat transfer.

[0103] S23. Based on the surface layer thickness and thermal conductivity, calculate the temperature of the heat exchange layer using formula (6). This temperature is approximately equal to the average temperature t of the medium. m ;

[0104] S24. Set the inlet and outlet temperature difference Δt of the medium, 2℃ < Δt < 5℃, and the inlet temperature is... The outlet temperature is Calculate the medium flow rate G according to formula (7);

[0105] S25. Combine experimental or numerical simulation methods to determine the pipe size, length and pipe spacing, and obtain surface temperature distribution data, as well as the medium outlet temperature under given inlet temperature conditions;

[0106] S26. Adjust the thickness of the heat spreader plate according to the surface temperature uniformity of the radiant plate, so that the maximum temperature difference between the surfaces of the radiant plates above adjacent pipes is within 2℃, and check the heat change of the medium inlet and outlet and the balance between the heat transfer between the radiant plate and the room.

[0107] The method for determining the cooling capacity of a semiconductor refrigeration element in S3 is as follows:

[0108] Based on the surface layer thickness and thermal conductivity, and the average temperature of the unheated / cooled surfaces in the room, calculate the actual cooling capacity Q corresponding to the inlet and outlet temperatures, respectively. i Q o The difference between the two cooling capacities is the cooling capacity Q1 required to eliminate the non-uniformity;

[0109] Based on the radiant panel surface temperature decrease of 2℃ obtained in S21, the cooling capacity Q” is recalculated. The difference Q2 between Q” and the theoretical cooling capacity Q’ is the cooling capacity required for temperature control.

[0110] 10. The design calculation method according to claim 6, characterized in that the heating condition verification method in S4 is as follows:

[0111] The operating temperature range for radiant heating can be 18–22℃, and 22–24℃ can be used when higher requirements are placed on the indoor environment.

[0112] If there is no need for temperature control, the same design method as traditional radiant heating systems can be adopted to check system parameters without considering the role of semiconductor refrigeration elements.

[0113] If temperature control is required, the heating amount of the semiconductor cooling element operating in reverse needs to be deducted from the total heat supply, and then the medium temperature is calculated. The medium temperature should be lower than that of the traditional radiant heating system, and the temperature difference should be controlled within 0 to 5℃.

[0114] The working principle of this device is as follows:

[0115] First, the traditional radiant heating / cooling mode is used to bring the surface temperature to a level slightly below the required radiant temperature. Then, the semiconductor cooling module is used to raise the temperature level. In cooling mode, the traditional radiant cooling mode is used to achieve a higher surface temperature first, and then semiconductor cooling is used to further cool the surface until the desired temperature is reached. In heating mode, the traditional radiant heating mode is used to achieve a lower surface temperature first, and then the semiconductor cooling mode is reversed to heat the surface until the desired temperature is reached.

[0116] In heating operation, the temperature of the medium inside the pipe is slightly lower than the required heating temperature, and the temperature of the heat exchanger and surface layer is relatively low. The surface of the thermoelectric cooling element connected to the lower heat exchanger is the cold surface, and the surface connected to the upper heat exchanger is the hot surface. It absorbs heat from the lower heat exchanger and transfers it to the upper heat exchanger, raising its temperature to the level required for normal heating. During system operation, the medium temperature is adjusted according to load changes, and both the heating capacity and temperature are slightly lower than the required heating level; the remaining heat is handled by the thermoelectric cooling element. Fine-tuning of the heating capacity and temperature is achieved by adjusting the current of the thermoelectric cooling element.

[0117] In cooling mode, the temperature of the medium inside the pipe is slightly higher than the required cooling temperature, while maintaining a large margin against condensation. The semiconductor refrigeration element operates in reverse, with the side connected to the lower heat spreader being the hot side and the side connected to the upper heat spreader being the cold side. It absorbs heat from the upper heat spreader and transfers it to the lower heat spreader, lowering the temperature of the upper heat spreader to the level required for normal cooling. The medium bears most of the cooling load, while the remaining load is borne by the semiconductor refrigeration element, which also regulates the temperature. In this mode, in addition to load regulation under normal operating conditions, the semiconductor element has a greater advantage in anti-condensation regulation. Compared to medium temperature regulation, the temperature can be rapidly adjusted by changing the current, allowing for timely response to sudden increases in indoor air humidity—something traditional radiant cooling systems cannot achieve. Under more extreme conditions, if reducing the current to zero still fails to raise the surface temperature above the air dew point, the current can be reversed, switching the semiconductor refrigeration element to heating mode. This rapidly heats the upper heat spreader, preventing condensation and accelerating surface moisture evaporation for active dehumidification if condensation does occur.

[0118] This device still uses radiative heat exchange, which provides high comfort and avoids discomfort such as a draft.

[0119] This device employs semiconductor refrigeration elements with small temperature differences, offering higher energy efficiency compared to common elements with large temperature differences. Furthermore, it effectively addresses the issue of uneven surface temperature on the radiant cooling plate and the resulting reduction in cooling capacity. Specifically, due to the temperature difference between the inlet and outlet of the medium, the maximum heating temperature is typically 10°C, while the maximum cooling temperature is typically 5°C, leading to uneven temperature distribution on the radiant cooling plate surface. In a radiant cooling system, the area corresponding to the medium inlet has the lowest surface temperature, requiring protection against condensation. This results in reduced cooling capacity in other, warmer areas, failing to reach the theoretical cooling capacity of the radiant cooling plate. Semiconductor refrigeration effectively compensates for this reduction, ensuring stable operation and efficient cooling for the entire system.

Claims

1. A design calculation method for a semiconductor coupled radiation heating / cooling device, characterized in that: The device includes a medium layer, which includes a plurality of parallel pipes (2) spaced apart and a semiconductor cooling element (5). The pipes (2) are filled with a heating / cooling medium. An upper heat spreader (4) and a lower heat spreader (3) are respectively provided on the upper and lower sides of the medium layer, and both are connected to the semiconductor cooling element (5). A surface layer (6) is provided on the top of the upper heat spreader (4). The design calculation method is based on the cooling operation and verified for the heating operation, using the following steps: S1. Design parameters and calculation formulas for traditional radiant heating / cooling systems; S2. Design Calculation Process: S3. Determine the cooling capacity of the semiconductor refrigeration element; S4. Heating operation condition check; The design parameters in S1 include: Using the indoor operating temperature as the indoor design temperature, the operating temperature t0 is defined by formula (1) or formula (2): (1) In Figure (1), The mean radiation temperature; Air temperature; The radiative heat transfer coefficient; The convective heat transfer coefficient; Since the radiative heat transfer coefficient and the convective heat transfer coefficient are roughly equivalent under normal conditions, the average of the air temperature and the mean radiant temperature is often used to represent the operating temperature, i.e.: (2) The operating temperature range for radiant cooling is 26~28℃, and 24~26℃ can be used when higher requirements are placed on the indoor environment. Average indoor unheated / cold surface temperature It can be calculated based on the same temperature as the air. The parameters also include: average temperature of the medium. Surface layer thickness δ, surface layer thermal conductivity λ, surface emission ε; The specific calculation formula in S1 is as follows: The cooling capacity supplied to a room by a radiant panel consists of both radiation and convection. (3) In formula (3) The radiant heat transfer between the radiant panel and the indoor non-heated / cooled surfaces; This is for convective heat exchange between the surface layer and the indoor air; (4) In equation (4), A is the area of ​​the radiating plate; Temperature of the radiant plate; This refers to the indoor non-heated / cooled surface temperature. For surface emissivity; (5) In equation (5), h is the convective heat transfer coefficient, which can be determined according to empirical formulas in heat transfer. However, when selecting the formula, attention should be paid to whether the radiant plate is horizontal or vertical, and the direction of heat flow. Heat exchange through the surface layer: (6) In equation (6), A is the area of ​​the radiating plate; Temperature of the radiant plate; Temperature of the heat exchange layer; The thermal conductivity of the surface layer; For surface layer thickness; Formula for calculating the heat of the medium: (7) In equation (7) G is the specific heat; G is the mass flow rate. The temperature difference between the inlet and outlet of the medium; The design calculation process in S2 is as follows: S21. Determine the surface temperature of the radiant panel based on the indoor design parameters. The surface temperature of the radiant panel is 3-5°C higher than the air dew point temperature; S22. Based on the average temperature of the indoor non-heated / cooled surfaces and the surface temperature of the radiant panel, calculate the theoretical cooling capacity using formulas (3), (4), and (5). The theoretical cooling capacity includes both radiative heat transfer and convective heat transfer. S23. Based on the surface layer thickness and thermal conductivity, calculate the temperature of the heat exchange layer using formula (6). This temperature is approximately equal to the average temperature of the medium. ; S24, Set the temperature difference between the inlet and outlet of the medium. 2℃ < t < 5℃, inlet temperature is The outlet temperature is The medium flow rate G is calculated according to formula (7); S25. Combine experimental or numerical simulation methods to determine the pipe size, length and pipe spacing, and obtain surface temperature distribution data, as well as the medium outlet temperature under given inlet temperature conditions; S26. Adjust the thickness of the heat spreader plate according to the surface temperature uniformity of the radiant plate so that the maximum temperature difference of the radiant plate surface above adjacent pipes is within 2℃, and check the heat change of the medium inlet and outlet and the balance between the heat transfer between the radiant plate and the room. The method for determining the cooling capacity of a semiconductor refrigeration element in S3 is as follows: Based on the surface layer thickness and thermal conductivity, and the average temperature of the unheated / cooled surfaces in the room, calculate the actual cooling capacity corresponding to the inlet and outlet temperatures, respectively. , The difference between the two cooling capacities is the cooling capacity required to eliminate the unevenness. ; Based on the 2°C decrease in the surface temperature of the radiant panel obtained in S21, the cooling capacity is recalculated. , With theoretical cooling capacity The difference This refers to the cooling capacity required for temperature control.

2. The design calculation method for a semiconductor coupled radiation heating / cooling device according to claim 1, characterized in that: The bottom of the lower heat spreader (3) is provided with a heat insulation layer (1).

3. The design calculation method for a semiconductor coupled radiation heating / cooling device according to claim 1, characterized in that: The pipe (2) is a flat pipe.

4. The design calculation method for a semiconductor coupled radiation heating / cooling device according to claim 1, characterized in that: The semiconductor cooling element (5) can be of any shape.

5. The design calculation method for a semiconductor coupled radiation heating / cooling device according to claim 1 or 4, characterized in that: The semiconductor cooling element (5) is disposed at any position in the dielectric layer.

6. The design calculation method for a semiconductor coupled radiation heating / cooling device according to claim 1, characterized in that, The method for verifying heating conditions in S4 is as follows: The operating temperature range for radiant heating can be 18~22℃, and 22~24℃ can be used when higher requirements are placed on the indoor environment. If there is no need for temperature control, the same design method as traditional radiant heating systems can be adopted to check system parameters without considering the role of semiconductor refrigeration elements. If temperature control is required, the heating amount of the semiconductor cooling element operating in reverse needs to be deducted from the total heat supply, and then the medium temperature is calculated. The medium temperature should be lower than that of the traditional radiant heating system, and the temperature difference should be controlled within 0~5℃.

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