A method for laser preparation of microstructures

Abstract

The application provides a method for preparing microstructure by laser, comprising the following steps: a laser performs several times of etching on different positions of a surface of a standby material, a temperature field receiver located at the bottom of the standby material acquires a temperature field of the etching process, and several temperature fields of the laser acting on the material during each etching are transmitted to a computer; the computer converts the temperature field into a digital matrix and obtains an optimal temperature field digital matrix; the computer simulates and calculates a minimum horizontal interval and a minimum vertical interval when two adjacent temperature fields do not overlap according to the optimal digital matrix; the standby microstructure region is divided according to the minimum horizontal interval and the minimum vertical interval, and a division region is determined; a processing route is determined according to the division region, and an optimal route is determined; and the surface of the processing material is etched under the optimal route. The application can select an optimal route to etch the microstructure according to the temperature field change of the laser acting on the material.

Description

Technical Field

[0001] This invention relates to the field of laser processing, and in particular to a method for preparing microstructures using lasers. Background Technology

[0002] In engineering applications, especially for many small components, it is necessary to fabricate a large number of densely packed microstructures. Examples include the cover layer on flexible printed circuit boards, which is densely covered with microstructures for arranging pins; the densely packed heat dissipation microstructures on aero engines; and the densely packed microstructures at the folding point of foldable mobile phone screens to enhance the flexibility of the fold. These microstructures are often small in size and densely distributed. Fabricating densely packed microstructures is challenging.

[0003] Contact machining methods, due to the presence of contact forces, are prone to deformation of the workpiece and are unsuitable for processing densely packed microstructures. Currently, laser etching utilizes the thermal process induced by the interaction between laser and matter to rapidly heat the material to its vaporization temperature, thereby removing it. This method eliminates tool wear, subjects the workpiece to stress, and allows for spot diameters down to the micrometer scale, making it ideal for processing densely packed microstructures. However, laser etching is based on the principle of thermal effects, which can lead to thermal damage or other heat-induced defects in the vicinity of the processed area. When processing densely packed microstructures, the small size of the structure and the close proximity of surrounding structures cause the initial material temperature to rise during the processing of the previous structure. This increased initial temperature exacerbates the thermal effects in the surrounding areas. Furthermore, etching micro- and nano-structures often employs low-energy processing, requiring multiple etching operations at a single location. Each previous etching operation also raises the initial material temperature, leading to further exacerbated thermal effects during subsequent etching operations at the same point. Both of these traditional etching methods allow for the subsequent etching to proceed after the previous process has cooled down; however, the waiting period inevitably impacts processing efficiency. How to utilize these vacuum periods to process areas unaffected by the previous etching temperature and how to develop feasible and effective processing paths to improve efficiency are urgent problems that require new solutions. Furthermore, most lasers exhibit energy decay and defocusing defects after a certain number of operating cycles. Given this issue, enabling laser processing to autonomously adjust according to processing conditions and the environment within a certain cycle will also be a challenge. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a method for laser fabrication of microstructures. When processing densely packed microstructures using a short-pulse laser, the area and number of partitions of the processing region can be calculated based on the temperature field changes of the material under laser action, and the optimal route can be selected for etching the microstructure.

[0005] The present invention achieves the above-mentioned technical objectives through the following technical means.

[0006] A method for laser fabrication of microstructures includes the following steps:

[0007] The laser performs several etching operations at different locations on the surface of the spare material. The temperature field of the etching process is obtained by a temperature field receiver located at the bottom of the spare material, and the temperature field of the laser acting on the material during each etching is transmitted to the computer.

[0008] The computer converts the temperature field into a digital matrix and obtains an optimal temperature field digital matrix A1;

[0009] The minimum horizontal spacing R1 and vertical spacing R2 when two adjacent temperature fields do not overlap are obtained by computer simulation calculation based on the optimal digital matrix A1.

[0010] The microstructure region to be processed is divided into partitions based on the minimum horizontal spacing R1 and vertical spacing R2, and the partition regions are determined.

[0011] Determine the processing route based on the zoned areas, and determine the optimal route;

[0012] The surface of the material is etched using the optimal route to create a microstructure on the surface of the material.

[0013] Furthermore, the computer converts the temperature field into a digital matrix and derives an optimal temperature field digital matrix A1, specifically:

[0014] The temperature field generated after several etching cycles is divided into L temperature field matrices according to the etching period. These L temperature field matrices are denoted as G1, G2, ..., Gn; each temperature field matrix is ​​an N×M matrix, denoted by G... k (i, j) represents the value in the i-th row and j-th column of the k-th temperature field matrix, k = 1...L; i = 1...N, j = 1...M; the maximum value at the same position in these L temperature field matrices is selected as the value at the same position in the optimal matrix A1, specifically:

[0015] The optimal matrix A1 is an N×M matrix, and A(i,j) represents the value in the i-th row and j-th column of matrix A1.

[0016] Let: A(i,j) = MAX(G) k (i, j)) yields the optimal temperature field digital matrix A1.

[0017] Furthermore, using a computer to simulate and calculate the minimum horizontal spacing R1 when two adjacent temperature fields do not overlap, based on the optimal digital matrix A1, the following is specifically:

[0018] Given a temperature field cooling temperature matrix B per unit time mn B mnThe elements in the table represent the cooling temperature of each location per unit time.

[0019] Let x be the number of cooling cycles, and let A be the matrix for the x-th cooling cycle. x+1 When x = 0, it is the optimal temperature field digital matrix A1;

[0020] The matrix A of the x-th cooling cycle x+1 -B, to obtain the matrix A for the (x+1)th cooling cycle. x+2 Extract matrix A x+2 The (x+2)th column is denoted as E. x+2 x+2 Determine E x+2 x+2 If the matrix is ​​zero, record the number of cooling cycles as step size n1; otherwise, x = x + 1, until the matrix becomes zero.

[0021] If we set the length and width of each element in the optimal numerical matrix A1 to r, we get R1 = n1r.

[0022] Furthermore, using a computer to simulate and calculate the minimum vertical spacing R2 when two adjacent temperature fields do not overlap, based on the optimal digital matrix A1, the following is specifically:

[0023] Given a temperature field cooling temperature matrix B per unit time mn B mn The elements in the table represent the cooling temperature of each location per unit time.

[0024] Let y be the number of cooling cycles, and let A be the matrix for the y-th cooling cycle. y+1 When y = 0, the optimal temperature field digital matrix is ​​A1;

[0025] The matrix A of the y-th cooling cycle y+1 -B, to obtain the matrix A for the (y+1)th cooling cycle. y+2 Extract matrix A y+2 The y+2th line is denoted as U y+2 y+2 Determine U y+2 y+2 If the matrix is ​​zero, record the number of cooling cycles as step size n2; otherwise, y = y + 1, until the matrix becomes zero.

[0026] If we set the length and width of each element in the optimal numerical matrix A1 to r, we get R2 = n2r.

[0027] Furthermore, the microstructure region to be processed is divided into zones based on the minimum horizontal spacing R1 and vertical spacing R2, and the zoned regions are determined as follows:

[0028] The highest value in the optimal temperature field digital matrix A1 is determined to be M, and the cooling rate at the highest temperature point per unit time is K. The complete cooling time t = M / K is calculated, and the number of consecutive horizontal holes can be denoted as p = t / n1.

[0029] The area covered by one peripheral etching operation can be denoted as S = R1 * R2, and the area covered by P holes can be denoted as S p =P*R1*R2; The total area S p Convert it into a rectangle with a side length ratio of R1:R2, and record it as the area of ​​a single region;

[0030] The area of ​​a single region is spread out over the area to be prepared, and several partitioned regions are obtained based on the area of ​​a single peripheral etching.

[0031] Furthermore, the processing route is determined based on the zoned areas, and the optimal route is determined, specifically as follows:

[0032] The computer simulates the drilling trajectory within a partitioned area. The drilling trajectory includes one of the following: a spiral trajectory, a serpentine trajectory, and a triangular trajectory. The computer simulates the processing efficiency and quality under the drilling trajectory and finally determines the optimal route.

[0033] The beneficial effects of this invention are as follows:

[0034] 1. The laser-based microstructure fabrication method of this invention enables the calculation of the processing area and the number of partitions based on the temperature field changes of the material under laser influence when processing densely packed microstructures using a short-pulse laser, ultimately selecting the optimal etching path for the microstructure. It also allows for efficient use of vacuum waiting time during continuous etching, improving both processing efficiency and quality.

[0035] 2. The laser-based microstructure fabrication method of the present invention makes reasonable use of the cooling process time during continuous etching, balancing processing efficiency and quality, while avoiding the influence of factors such as energy attenuation caused by laser instability, thereby improving the reliability of the equipment. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. The drawings described below are some embodiments of the present invention. For those skilled in the art, it is obvious that other drawings can be obtained from these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the laser-based microstructure fabrication device described in this invention.

[0038] Figure 2 This is a flowchart of the laser-based microstructure fabrication method described in this invention.

[0039] Figure 3 This is a schematic diagram illustrating the acquisition of the optimal temperature field matrix in an embodiment of the present invention.

[0040] Figure 4 This is a schematic diagram of simulated single-hole periphery etching according to an embodiment of the present invention.

[0041] Figure 5 This is a schematic diagram of the single-hole periphery etching matrix calculation steps in an embodiment of the present invention.

[0042] Figure 6 This is a schematic diagram illustrating the quantification of partitions in an embodiment of the present invention.

[0043] Figure 7 This is a schematic diagram of different scanning paths according to an embodiment of the present invention.

[0044] In the picture:

[0045] 1-Laser; 2-Processing material; 3-Temperature field; 4-Spare material; 5-Microstructure; 6-Temperature field receiver; 7-Computer; 8-Several temperature fields. Detailed Implementation

[0046] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0047] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "axial," "radial," "vertical," "horizontal," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0048] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0049] like Figure 1 and Figure 2 As shown, the laser-based method for fabricating microstructures according to the present invention includes the following steps:

[0050] S01: Laser 1 performs several etching operations at different positions on the surface of spare material 4, uses temperature field receiver 6 located at the bottom of spare material 4 to obtain the temperature field of the etching process, and transmits the temperature field 8 of the laser acting on the material several times during each etching to computer 7.

[0051] S02: Computer 7 converts the temperature field into a digital matrix, processes the matrix several times, and obtains an optimal temperature field digital matrix A1, specifically:

[0052] like Figure 3 As shown, the temperature field 8 generated after several etching cycles is divided into L temperature field matrices according to the etching period. Each temperature field matrix is ​​an N×M matrix. The maximum value at the same position in these L temperature field matrices is selected as the value at the same position in the optimal matrix A1; specifically:

[0053] L temperature field matrices can be represented as G1, G2, ..., Gn; using G... k (i, j) represents the value in the i-th row and j-th column of the k-th temperature field matrix, where k = 1...L; i = 1...N, j = 1...M;

[0054] The optimal matrix A1 is also an N×M matrix. Let A(i,j) represent the value in the i-th row and j-th column of matrix A1. Let:

[0055] A(i,j)=MAX(G k (i, j)), thus obtaining an optimal temperature field digital matrix A1.

[0056] S03: Using computer 7, based on the optimal digital matrix A1, matrix operations are employed to partition the microstructure region to be processed, thus determining the partitioned regions; specifically:

[0057] The principle is as follows: the first etching generates a reference temperature field. If the next etching is performed around this temperature field, a secondary etching temperature field identical to the reference temperature field is obtained. If the two temperature fields overlap, they are considered to influence each other. If they do influence each other, the secondary etching is moved to the right until the two temperature fields no longer overlap. Similarly, the spacing of the continuous etching below can be obtained. This allows us to obtain the minimum spacing R1 and R2 for two holes to not influence each other. Figure 4 As shown.

[0058] Determine the minimum horizontal spacing R1:

[0059] Given a temperature field cooling temperature matrix B per unit time mn B mn The elements in the table represent the cooling temperature of each location per unit time.

[0060] Let x be the number of cooling cycles, and let A be the matrix for the x-th cooling cycle. x+1 When x = 0, the optimal temperature field digital matrix A1 is obtained; the matrix A1 is obtained for the x-th cooling operation. x+1 -B, to obtain the matrix A for the (x+1)th cooling cycle. x+2 Extract matrix A x+2 The (x+2)th column is denoted as E. x+2 x+2 Determine E x+2 x+2 Is it a zero matrix? If it is a zero matrix, record the number of cooling cycles as step size n1. If not, then x = x + 1, and repeat the above steps until it is a zero matrix.

[0061] For example:

[0062] The optimal temperature field digital matrix A1-B is obtained by setting all elements less than or equal to 0 to 0, resulting in matrix A2 after the first cooling. The second column of matrix A2 is extracted and denoted as E2. 2 ,

[0063] Determine E2 2 Is it a zero matrix? If not, then the matrix A2-B is the first cooling matrix. mn The matrix A3 obtained after the second cooling is obtained. The third column of matrix A3 is extracted and denoted as E3. 3 Determine E3 3 Is it a zero matrix? If not, repeat the above steps.

[0064] Given a matrix where each element occupies a space with a length and width of r, such as... Figure 5 As shown, this gives us R1 = n1r. The above is based on A1 and B... mn The minimum horizontal spacing R1 was calculated by performing subtraction on the matrix.

[0065] Determine the minimum vertical spacing R2:

[0066] Given a temperature field cooling temperature matrix B per unit time mn B mn The elements in the table represent the cooling temperature of each location per unit time; in the example B mn Each value within is 1;

[0067] Let y be the number of cooling cycles, and let A be the matrix for the y-th cooling cycle. y+1 When y = 0, the optimal temperature field digital matrix A1 is obtained; the matrix A1 for the y-th cooling operation is obtained. y+1 -B, to obtain the matrix A for the (y+1)th cooling cycle. y+2 Extract matrix A y+2 The y+2th line is denoted as U y+2 y+2 Determine U y+2 y+2 Is it a zero matrix? If it is a zero matrix, record the number of cooling cycles as step size n2. If not, then y = y + 1, and repeat the above steps until it is a zero matrix.

[0068] like Figure 5 As shown, if each element in the matrix occupies a position with a length and width of r, then R² = n²r. The above is achieved by considering A1 and B... mn The minimum vertical spacing R2 was calculated by performing subtraction on the matrix.

[0069] The highest value in the optimal temperature field digital matrix A1 is determined to be M, and the cooling rate at the highest temperature point per unit time is K. The complete cooling time t = M / K is calculated. If the material size is not considered, the number of consecutive holes drilled in the horizontal direction can be denoted as p = t / n1, and the area of ​​one peripheral etching can be denoted as S = R1*R2. The area occupied by completing P holes can be denoted as S p =P*R1*R2; if S p The value is very large, and the material size cannot meet such a width, so the area can be recalculated. The total area Sp can be converted into a rectangle with a side length ratio of R1:R2, denoted as the single-area area, with its length denoted as Length and its width as Width. In this way, the single-area area can be filled into the area to be prepared, and several partitioned regions can be obtained based on the area of ​​one peripheral etching.

[0070] S03: Determine the processing route based on the zone area, and determine the optimal route;

[0071] Computer 7 simulates partitioned regions as follows Figure 7 The drilling trajectories shown include circular, serpentine, and triangular trajectories; the processing efficiency and quality under different routes are simulated, and the optimal route is finally determined.

[0072] S04: Etching of material 2 is performed under the optimal route. The temperature field receiver monitors the temperature field changes in real time and will monitor the temperature field component database in real time to provide a basis for material processing with different parameters.

[0073] Example

[0074] S01: Laser 1 performs several etching operations at different positions on the surface of spare material 4, uses temperature field receiver 6 located at the bottom of spare material 4 to obtain the temperature field of the etching process, and transmits the temperature field 8 of the laser acting on the material several times during each etching to computer 7.

[0075] S02: The temperature field generated after several etching cycles is divided into L temperature field matrices according to the etching period. These L temperature field matrices can be represented as G1, G2, ..., Gn; for example... Figure 3 As shown, each temperature field matrix is ​​a 7x7 matrix.

[0076]

[0077] Use G k (i, j) represents the value in the i-th row and j-th column of the k-th temperature field matrix, k = 1...L; i = 1...N, j = 1...M; the optimal matrix A is also an N×M matrix, let A(i, j) represent the value in the i-th row and j-th column of matrix A, let:

[0078] A(i,j)=MAX(G k (i, j)), thus obtaining an optimal temperature field digital matrix A1:

[0079]

[0080] S03: Using computer 7, based on the optimal digital matrix A1, matrix operations are employed to partition the densely packed microstructures to be processed, thus determining the partitioned regions; specifically:

[0081] Determine the minimum horizontal spacing R1:

[0082]

[0083] Given a temperature field cooling temperature matrix per unit time Matrix B mn The elements in the equation represent the cooling temperature at each location per unit time, given B. mn All elements within the area are 1, meaning that the cooling value of each area is 1 per unit time.

[0084] The optimal temperature field digital matrix A1-B is obtained by setting all elements less than or equal to 0 to 0, resulting in matrix A2 for the first cooling:

[0085]

[0086] Extract the second column of matrix A2 and denote it as E2. 2 , Determine E2 2 Is it a zero matrix? If it is, the calculation ends; otherwise, the matrix A2-B is the first cooling matrix. mn The matrix A3 obtained after the second cooling is obtained.

[0087]

[0088] Extract the third column of matrix A3 and denote it as E3. 3 , Determine E3 3 If the matrix is ​​zero, the calculation ends; otherwise, the calculation continues. If the matrix is ​​not zero, the calculation continues. If the matrix is ​​zero, the number of cooling cycles is recorded as a step size n1, where n1 = 6 in this example. Each element in the matrix occupies a position with a length and width of r. Figure 5 As shown, this gives us R1 = n1r;

[0089] Similarly, we get n2 = 6; therefore, we can obtain R2 = n2r;

[0090] like Figure 5 As shown, n1 = 6 is obtained, the highest value of temperature field matrix A1 is recorded as M = 300, and the cooling rate at the highest temperature point per unit time is recorded as K = 1 (matrix B). mn Corresponding to a value of 1 for the center value of A1 (300), the complete cooling time t = M / K can be calculated. If the material size is not considered, the number of consecutive peripheral holes can be denoted as p = t / n1, and the area of ​​one peripheral etching operation can be denoted as S = R1 * R2. The area occupied by completing P holes can be denoted as S... p =P*R1*R2, obviously if S p The value is very large, and the material size cannot meet such a width, so the area can be recalculated. The total area Sp can be converted into a rectangle with a side length ratio of R1:R2, denoted as the single-area area, with its length denoted as Length and its width as Width. In this way, the single-area area can be filled in the area to be prepared (processing area), and several partitioned areas can be obtained based on the area S of one peripheral etching.

[0091] like Figure 6 As shown, the parameters obtained from the optimal temperature field digital matrix A1 are: n = 6, M = 300, k = 1, t = 300, P = 50, S = R1*R2, S p =P*R1*R2, the area of ​​the single zone to be processed can be divided into 5x11 rectangular partitions, that is, 55 partitions. Each small rectangle in the figure represents a partition, and the area of ​​the small rectangle is S.

[0092] S03: Determine the processing route based on the zone area, and determine the optimal route;

[0093] S04: Etch the material 2 under the optimal route to form microstructure 5 on the surface of the material 2. The temperature field receiver monitors the temperature field changes in real time and will provide a basis for material processing with different parameters by using a real-time temperature field component database.

[0094] It should be understood that although this specification is described according to various embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

[0095] The detailed descriptions listed above are merely specific illustrations of feasible embodiments of the present invention and are not intended to limit the scope of protection of the present invention. All equivalent embodiments or modifications made without departing from the spirit of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for laser fabrication of microstructures, characterized in that, Includes the following steps: The laser (1) performs several etching operations at different positions on the surface of the spare material (4), and uses the temperature field receiver (6) located at the bottom of the spare material (4) to obtain the temperature field of the etching process, and transmits the temperature field (8) of the laser acting on the material several times during each etching to the computer (7). The computer (7) converts the temperature field into a digital matrix and obtains an optimal temperature field digital matrix A1; The computer (7) simulates and calculates the minimum horizontal spacing R1 and vertical spacing R2 when two adjacent temperature fields do not overlap, based on the optimal digital matrix A1. The microstructure region to be processed is divided into partitions based on the minimum horizontal spacing R1 and vertical spacing R2, and the partition regions are determined. Determine the processing route based on the zoned areas, and determine the optimal route; The surface of the processing material (2) is etched under the optimal route to form a microstructure on the surface of the processing material (2); In this process, the computer (7) converts the temperature field into a digital matrix and obtains an optimal temperature field digital matrix A1, specifically: The temperature field (8) generated after several etching cycles is divided into L temperature field matrices according to the sampling period. The L temperature field matrices are represented as G1, G2, ..., GL; each temperature field matrix is ​​an N×M matrix, denoted by G. k (i, j) represents the value in the i-th row and j-th column of the k-th temperature field matrix, k=1……L; i=1……N, j=1……M; the maximum value at the same position in these L temperature field matrices is selected as the value at the same position in the optimal matrix A1, specifically: The optimal matrix A1 is an N×M matrix, and A(i,j) represents the value in the i-th row and j-th column of matrix A1. Let: A(i,j) = MAX(G) k (i, j)), to obtain the optimal temperature field digital matrix A1.

2. The method for laser fabrication of microstructures according to claim 1, characterized in that, The minimum horizontal distance R1 when two adjacent temperature fields do not overlap is calculated by computer (7) based on the optimal digital matrix A1. Specifically: Given a temperature field cooling temperature matrix B per unit time mn B mn The elements in the table represent the cooling temperature of each location per unit time. Let x be the number of cooling cycles, and let A be the matrix for the x-th cooling cycle. x+1 When x=0, it is the optimal temperature field digital matrix A1; The matrix A of the x-th cooling cycle x+1 -B mn The matrix A for the (x+1)th cooling is obtained. x+2 Extract matrix A x+2 The (x+2)th column is denoted as E. x+2 x+2 Determine E x+2 x+2 If the matrix is ​​zero, record the number of cooling cycles as step size n1; otherwise, x = x + 1, until the matrix is ​​zero. Let r be the length and width of each element in the optimal numerical matrix A1, and we get R1.

3. The method for laser fabrication of microstructures according to claim 1, characterized in that, The computer (7) simulates and calculates the minimum vertical distance R2 when two adjacent temperature fields do not overlap, based on the optimal digital matrix A1. Specifically: Given a temperature field cooling temperature matrix B per unit time mn B mn The elements in the table represent the cooling temperature of each location per unit time. Let y be the number of cooling cycles, and let A be the matrix for the y-th cooling cycle. y+1 When y=0, it is the optimal temperature field digital matrix A1; The matrix A of the y-th cooling cycle y+1 -B mn The matrix A for the (y+1)th cooling is obtained. y+2 Extract matrix A y+2 The y+2th line is denoted as U y+2 y+2 Determine U y+2 y+2 If the matrix is ​​zero, record the number of cooling cycles as step size n2; otherwise, y = y + 1, until the matrix becomes zero. Let r be the length and width of each element in the optimal numerical matrix A1, and we get R2.

4. The method for laser fabrication of microstructures according to claim 1, characterized in that, The microstructure region to be processed is divided into zones based on the minimum horizontal spacing R1 and vertical spacing R2, and the zoned regions are determined as follows: The highest value in the optimal temperature field digital matrix A1 is determined to be M, and the cooling rate at the highest temperature point per unit time is K. The complete cooling time t = M / K is calculated, and the number of consecutive horizontal holes can be denoted as p. The area covered by one peripheral etching operation can be denoted as S = R1 * R2, and the area covered by p holes can be denoted as S p =p*R1*R2; The total area S p Convert it into a rectangle with a side length ratio of R1:R2, and record it as the area of ​​a single region; The area of ​​a single region is spread out over the area to be prepared, and several partitioned regions are obtained based on the area of ​​a single peripheral etching.

5. The method for laser fabrication of microstructures according to claim 1, characterized in that, The processing route is determined based on the zone area, and the optimal route is determined as follows: The computer (7) simulates the drilling trajectory within the partitioned area. The drilling trajectory includes one of the following: a spiral trajectory, a serpentine trajectory, and a triangular trajectory. The computer simulates the processing efficiency and quality under the drilling trajectory and finally determines the optimal route.

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