Tantalum carbide coating for semiconductor growth and preparation method thereof

Abstract

The present invention belongs to the technical field of semiconductor material preparation, and relates to the preparation of a growing semiconductor substrate, and specifically to a tantalum carbide coating for semiconductor growth and a preparation method thereof. The method comprises the following steps: uniformly mixing transition layer main material particles, a first sintering aid, a first binder and a first solvent to form a transition layer suspension, placing the transition layer suspension on the surface of the substrate to form a first pre-sintered layer, and then performing a first vacuum sintering to form a transition layer from the first pre-sintered layer; uniformly mixing tantalum carbide powder, a second sintering aid, a second binder and a second solvent to form a tantalum carbide layer suspension, placing the substrate on the surface of which the transition layer is prepared in the tantalum carbide layer suspension for immersion, and then performing a second vacuum sintering on the impregnated substrate to obtain a tantalum carbide coating; the preparation method provided by the present invention can effectively solve the drawbacks of existing tantalum carbide coating products that are prone to defects such as pores and cracks and high production costs.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor material preparation, relates to the preparation of a growing semiconductor substrate, and specifically relates to a tantalum carbide coating for semiconductor growth and a preparation method thereof. Background Art

[0002] The information disclosed in this background technology section is only intended to enhance the understanding of the overall background of the invention, and should not necessarily be regarded as an admission or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art.

[0003] Carbon materials are widely used as crucibles and accessories in the growth of semiconductor materials due to their high melting point, stable chemical properties and low price. The growth environment of wide bandgap semiconductor materials is characterized by high temperature and high corrosion. During the growth process, carbon materials exposed to strong corrosive atmospheres will react with corrosive gases, which not only reduces the service life of carbon materials, but also causes impurities to overflow, affecting the quality of semiconductor materials. Ultra-high temperature ceramics are a class of high-melting-point transition metal borides, binary nitrides and carbides, etc., which have good stability in highly corrosive environments above 2000°C. Among them, tantalum carbide has the characteristics of high melting point (3880°C) and high chemical stability, and its corrosion resistance far exceeds that of conventional base materials such as graphite. In addition, tantalum carbide has good chemical compatibility with carbon materials such as graphite. Preparing a dense tantalum carbide coating on the surface of the substrate can effectively increase the service life of crucibles and accessories, reduce the impurities that are corroded and overflowed, and improve the growth quality of semiconductor materials.

[0004] The main preparation methods of ultra-high temperature ceramic coatings include embedding method, chemical vapor deposition method, slurry sintering method and magnetron sputtering method. According to the inventors' research, the slurry sintering method uses particle stacking to form a coating. The pores between particles are large. When the thickness is thin, an effective protective coating cannot be formed. When the thickness is thick, pores will be generated uncontrollably during the stacking process. The pores can be divided into through holes or closed holes. The aperture of the through holes will provide erosion channels during the growth and use of single crystals, causing defects. At the same time, due to the high brittleness of tantalum carbide ceramics and the mismatch of the thermal expansion coefficient with the base material, dense tantalum carbide coatings are prone to pores and cracks, which will lead to a decrease in the protectiveness of the tantalum carbide coating, making it easy for the cavity atmosphere to contact the base material, thereby affecting the quality of the crystal. Summary of the invention

[0005] In order to address the deficiencies of the prior art, the purpose of the present invention is to provide a tantalum carbide coating for semiconductor growth and a preparation method thereof. The preparation method provided by the present invention can utilize a slurry sintering method to prepare a tantalum carbide coating material having good protection and a carbide buffer layer. The preparation method can effectively address the drawbacks of existing tantalum carbide coated products that are prone to defects such as pores and cracks and have excessively high production costs.

[0006] In order to achieve the above object, the technical solution of the present invention is:

[0007] In a first aspect, a method for preparing a tantalum carbide coating for semiconductor growth comprises the following steps:

[0008] The transition layer main material particles, the first sintering aid, the first binder and the first solvent are uniformly mixed to form a transition layer suspension, the transition layer suspension is placed on the surface of the substrate to form a first pre-sintered layer, and then a first vacuum sintering is performed to form the first pre-sintered layer into a transition layer;

[0009] The tantalum carbide powder, the second sintering aid, the second binder and the second solvent are uniformly mixed to form a tantalum carbide layer suspension, the substrate on the surface of which the transition layer is prepared is placed in the tantalum carbide layer suspension for immersion, and then the impregnated substrate is subjected to a second vacuum sintering to obtain;

[0010] The transition layer main material particles, the first sintering aid and the second sintering aid are non-tantalum carbide carbides or a mixture of metal elements and carbon powder, and the particle size of the transition layer main material particles is larger than that of tantalum carbide powder.

[0011] Applicable to the use conditions of semiconductor materials, it is necessary to at least meet the requirements of forming a relatively dense layer on the surface, with no cracks or through holes on the surface. The pores such as through holes or closed holes generated by the accumulation process of the slurry sintering method are prone to defects in the growth of single crystals. At the same time, the dense tantalum carbide coating caused by the mismatch of thermal expansion coefficients is prone to pores and cracks. The present invention first sets a transition layer on the surface of the substrate by a slurry sintering method, and then sets a tantalum carbide coating. By setting the transition layer, the tantalum carbide coating can be prevented from directly contacting the substrate, thereby avoiding the mismatch of thermal expansion coefficients between the tantalum carbide coating and the substrate, and then preventing the dense tantalum carbide coating from generating pores and cracks due to the mismatch of thermal expansion coefficients. Secondly, in the process of preparing the tantalum carbide coating, the present invention places tantalum carbide powder, a second sintering aid, and a second binder on the surface of the substrate to prepare the transition layer by an impregnation method. The impregnation method fills the gaps in the transition layer by infiltration and surface coverage, thereby reducing the cracks and defects of the tantalum carbide coating on the surface of the transition layer. Thirdly, the present invention provides transition layer main material particles and tantalum carbide powder with different particle sizes, which is beneficial to mutual filling between particles, thereby helping to reduce cracks and defects in the surface tantalum carbide coating.

[0012] In a second aspect, a tantalum carbide coating for semiconductor growth is obtained by the above preparation method.

[0013] In a third aspect, a crucible and / or its accessories for growing semiconductor materials have the above-mentioned tantalum carbide coating for growing semiconductors disposed on the surface.

[0014] The beneficial effects of the present invention are:

[0015] The present invention obtains a composite ultra-high temperature ceramic coating by successively preparing a carbide transition layer and a dense tantalum carbide coating. First, a porous carbide transition layer is obtained on the surface of a substrate by coating-sintering, and then the porous carbide transition layer is impregnated with a precursor. At this time, the precursor can be immersed in the carbide transition layer to fill the pores and improve the density of the coating. This method has low cost and simple operation, and the carbide transition layer of the coating can effectively release the thermal stress caused by the mismatch of thermal expansion coefficients between the tantalum carbide coating and the substrate material, and can effectively prevent the appearance of cracks and pores on the dense tantalum carbide coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings in the specification, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.

[0017] Figure 1 Schematic diagram of the cross section of a composite tantalum carbide coating having a carbide transition layer and a dense tantalum carbide coating in an embodiment of the present invention, wherein 100. substrate material, 200. hafnium carbide coating, 300. tantalum carbide coating;

[0018] Figure 2 This is a surface morphology diagram of a composite tantalum carbide coating having a carbide transition layer and a dense tantalum carbide coating in an embodiment of the present invention;

[0019] Figure 3 This is a surface morphology of a tantalum carbide coating prepared by the slurry sintering method in the comparative example of the present invention. DETAILED DESCRIPTION

[0020] It should be noted that the following detailed descriptions are exemplary and are intended to provide further explanation of the present invention. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present invention belongs.

[0021] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit exemplary embodiments according to the present invention. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0022] In view of the high brittleness of tantalum carbide ceramics and the mismatch in thermal expansion coefficient with the base material, dense tantalum carbide coatings are prone to pores and cracks. The present invention provides a tantalum carbide coating for semiconductor growth and a preparation method thereof.

[0023] A typical embodiment of the present invention provides a method for preparing a tantalum carbide coating for semiconductor growth, comprising the following steps:

[0024] The transition layer main material particles, the first sintering aid, the first binder and the first solvent are uniformly mixed to form a transition layer suspension, the transition layer suspension is placed on the surface of the substrate to form a first pre-sintered layer, and then a first vacuum sintering is performed to form the first pre-sintered layer into a transition layer;

[0025] The tantalum carbide powder, the second sintering aid, the second binder and the second solvent are uniformly mixed to form a tantalum carbide layer suspension, the substrate on the surface of which the transition layer is prepared is placed in the tantalum carbide layer suspension for immersion, and then the impregnated substrate is subjected to a second vacuum sintering to obtain;

[0026] The transition layer main material particles, the first sintering aid and the second sintering aid are non-tantalum carbide carbides or a mixture of metal elements and carbon powder, and the particle size of the transition layer main material particles is larger than that of tantalum carbide powder.

[0027] The chemical compositions of the transition layer main material particles, the first sintering aid, and the second sintering aid described in the present invention may be the same or different. Generally, different chemical compositions are selected as the transition layer main material particles, the first sintering aid, and the second sintering aid, respectively.

[0028] In some embodiments, the non-tantalum carbide carbide includes one or more of HfC, TiC, WC, and the like.

[0029] In some embodiments, the first adhesive is one or a mixture of phenolic resin, epoxy resin, graphite glue, polyvinyl alcohol, silicone resin, acrylate, and polyvinyl chloride.

[0030] In some embodiments, the first solvent is one or a mixed solvent of deionized water, anhydrous ethanol, acetone, benzene, toluene, chloroform, styrene, trichloroethylene, and ethyl acetate.

[0031] In some embodiments, the mass ratio of the transition layer main material particles, the first sintering aid, and the first binder is 60-90:1-20:1-20.

[0032] In some embodiments, the particle size of the transition layer main material particles is 10-100 μm.

[0033] In some embodiments, after forming the first pre-sintered layer, the first drying is performed first, and then the first vacuum sintering is performed. The purpose of performing the first drying first is to reduce the flow probability and reduce the probability of uneven coating. Specifically, the temperature of the first drying is 100 to 600° C. and the time is 3 to 6 hours. It is helpful for the treatment of drying and sintering aids.

[0034] In some embodiments, the first vacuum sintering is performed at a temperature of 1100 to 2500° C. for a time of 6 to 24 hours.

[0035] In some embodiments, the substrate is pretreated before use. Specifically, the pretreatment process is: clean the substrate surface with ethanol or acetone, and dry the substrate under nitrogen conditions. More specifically, the substrate material is ultrasonically cleaned in anhydrous ethanol or acetone for 5 minutes twice, and then the substrate material is purged and dried under nitrogen conditions.

[0036] In some embodiments, the second binder is one or a mixture of phenolic resin, epoxy resin, graphite glue, polyvinyl alcohol, silicone resin, acrylate, and polyvinyl chloride.

[0037] In some embodiments, the second solvent is one or a mixed solvent of deionized water, anhydrous ethanol, acetone, benzene, toluene, chloroform, styrene, trichloroethylene, and ethyl acetate.

[0038] In some embodiments, the mass ratio of tantalum carbide powder, the second sintering aid, and the second binder is 70-90:1-10:1-20.

[0039] In some embodiments, the particle size of the tantalum carbide powder is 0.1-10 μm.

[0040] In some embodiments, the immersion time is 1 to 4 hours.

[0041] In some embodiments, after impregnation, a second drying is performed first, and then a second vacuum sintering is performed. Specifically, the temperature of the second drying is 100 to 500° C., and the time is 3 to 6 hours.

[0042] In some embodiments, the second vacuum sintering is performed at a temperature of 1100 to 2500° C. and for a time of 2 to 24 hours.

[0043] Another embodiment of the present invention provides a tantalum carbide coating for semiconductor growth, which is obtained by the above preparation method.

[0044] A third embodiment of the present invention provides a crucible and / or accessories thereof for growing semiconductor materials, the surface of which is provided with the above-mentioned tantalum carbide coating for growing semiconductors.

[0045] In order to enable those skilled in the art to more clearly understand the technical solution of the present invention, the technical solution of the present invention will be described in detail below in conjunction with specific embodiments.

[0046] Example 1

[0047] A high-purity graphite sheet was selected as the substrate material 100, and was placed in acetone for ultrasonic treatment for 5 minutes, and then placed in deionized water for ultrasonic treatment for 5 minutes, and then dried by blowing with nitrogen.

[0048] Weigh 24g of HfC powder with a particle size of 10μm, 0.8g of WC powder, 2.2g of polyvinyl chloride, and 30ml of acetone, mix and stir, and ultrasonicate for 5min to obtain a coating suspension. Use a spraying device to evenly coat the coating suspension on the surface of the graphite substrate. Place the coated graphite substrate in a vacuum environment and dry it at 400℃ for 5h.

[0049] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 2000° C. for 12 hours. After sintering, it is naturally cooled to obtain a hafnium carbide coating layer with a uniform thickness of 200.

[0050] Weigh 40g of TaC powder with a particle size of 0.5μm, 1.5g of TiC powder, 3g of polyvinyl chloride, and 40ml of anhydrous ethanol, mix and stir, and ultrasonicate for 10min to obtain a coating suspension. Immerse the substrate material with a transition layer in the tantalum carbide suspension for 3h. Place the substrate material with the coating in a vacuum environment and dry it at 300℃ for 4h.

[0051] The dried graphite substrate with coating is sintered in vacuum at a temperature of 1900°C for 15 hours. After sintering, it is naturally cooled to obtain a tantalum carbide coating with a uniform thickness of 300. Figure 1 shown.

[0052] Comparative Example 1

[0053] A high-purity graphite sheet was selected as the substrate material, and was placed in acetone for ultrasonic treatment for 5 minutes, then placed in deionized water for ultrasonic treatment for 5 minutes, and then dried by purging with nitrogen.

[0054] Weigh 24g of TaC powder with a particle size of 10μm, 0.8g of WC powder, 2.2g of polyvinyl chloride, and 30ml of acetone, mix and stir, and ultrasonicate for 5min to obtain a coating suspension. Use a spraying device to evenly coat the coating suspension on the surface of the graphite substrate. Place the coated graphite substrate in a vacuum environment and dry it at 400℃ for 5h.

[0055] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 1900° C. for 15 hours. After sintering, it is naturally cooled to obtain a tantalum carbide coating with uniform thickness.

[0056] pass Figure 2 and Figure 3 It can be seen from the comparison that the tantalum carbide coating prepared by the conventional slurry sintering method in the comparative example has a large number of pores and defects on its surface, while the tantalum carbide coating prepared in Example 1 has a relatively dense layer on its surface with no cracks or through holes.

[0057] Example 2

[0058] A high-purity graphite sheet was selected as the substrate material, and was placed in acetone for ultrasonic treatment for 5 minutes, then placed in deionized water for ultrasonic treatment for 5 minutes, and then dried by purging with nitrogen.

[0059] Weigh 24g of HfC powder with a particle size of 10μm, 1.3g of WC powder, 0.5g of graphite glue, and 30ml of acetone, mix and stir, and ultrasonicate for 5min to obtain a coating suspension. Use a spraying device to evenly coat the coating suspension on the surface of the graphite substrate. Place the coated graphite substrate in a vacuum environment and dry it at 400℃ for 5h.

[0060] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 2000° C. for 12 hours. After sintering, it is naturally cooled to obtain a hafnium carbide coating with uniform thickness.

[0061] Weigh 40g of TaC powder with a particle size of 0.5μm, 1g of TiC powder, 2g of graphite glue, and 40ml of anhydrous ethanol, mix and stir, and ultrasonicate for 10min to obtain a coating suspension. Immerse the substrate material with a transition layer in the tantalum carbide suspension for 3h. Place the substrate material with the coating in a vacuum environment and dry it at 300℃ for 4h.

[0062] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 1900° C. for 15 hours. After sintering, it is naturally cooled to obtain a tantalum carbide coating with uniform thickness.

[0063] Example 3

[0064] A high-purity graphite sheet was selected as the substrate material, and was placed in acetone for ultrasonic treatment for 5 minutes, then placed in deionized water for ultrasonic treatment for 5 minutes, and then dried by purging with nitrogen.

[0065] Weigh 24g of HfC powder with a particle size of 10μm, 2g of WC powder, 3g of polyvinyl alcohol, and 30ml of acetone, mix and stir, and ultrasonicate for 5min to obtain a coating suspension. Use a spraying device to evenly coat the coating suspension on the surface of the graphite substrate. Place the coated graphite substrate in a vacuum environment and dry it at 400℃ for 5h.

[0066] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 2000° C. for 12 hours. After sintering, it is naturally cooled to obtain a hafnium carbide coating with uniform thickness.

[0067] Weigh 40g of TaC powder with a particle size of 0.5μm, 3g of TiC powder, 6g of polyvinyl alcohol, and 40ml of anhydrous ethanol, mix and stir, and ultrasonicate for 10min to obtain a coating suspension. Immerse the substrate material with a transition layer in the tantalum carbide suspension for 3h. Place the substrate material with the coating in a vacuum environment and dry it at 300℃ for 4h.

[0068] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 1900° C. for 15 hours. After sintering, it is naturally cooled to obtain a tantalum carbide coating with uniform thickness.

[0069] Example 4

[0070] A high-purity graphite sheet was selected as the substrate material, and was placed in acetone for ultrasonic treatment for 5 minutes, then placed in deionized water for ultrasonic treatment for 5 minutes, and then dried by purging with nitrogen.

[0071] Weigh 24g of HfC powder with a particle size of 10μm, 0.8g of TiC powder, 2.2g of polyvinyl chloride, and 30ml of acetone, mix and stir, and ultrasonicate for 5min to obtain a coating suspension. Use a spraying device to evenly coat the coating suspension on the surface of the graphite substrate. Place the coated graphite substrate in a vacuum environment and dry it at 400℃ for 5h.

[0072] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 2000° C. for 12 hours. After sintering, it is naturally cooled to obtain a hafnium carbide coating with uniform thickness.

[0073] Weigh 40g of TaC powder with a particle size of 0.5μm, 1.5g of WC powder, 3g of polyvinyl chloride, and 40ml of anhydrous ethanol, mix and stir them, and ultrasonicate for 10min to obtain a coating suspension. Immerse the substrate material with a transition layer in the tantalum carbide suspension for 3h. Place the substrate material with the coating in a vacuum environment and dry it at 300℃ for 4h.

[0074] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 1900° C. for 15 hours. After sintering, it is naturally cooled to obtain a tantalum carbide coating with uniform thickness.

[0075] Example 5

[0076] A high-purity graphite sheet was selected as the substrate material, and was placed in acetone for ultrasonic treatment for 5 minutes, then placed in deionized water for ultrasonic treatment for 5 minutes, and then dried by purging with nitrogen.

[0077] Weigh 24g of HfC powder with a particle size of 10μm, 0.8g of WC powder, 2.2g of epoxy resin, and 30ml of acetone, mix and stir, and ultrasonicate for 5min to obtain a coating suspension. Use a spraying device to evenly coat the coating suspension on the surface of the graphite substrate. Place the coated graphite substrate in a vacuum environment and dry it at 400℃ for 5h.

[0078] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 2000° C. for 12 hours. After sintering, it is naturally cooled to obtain a hafnium carbide coating with uniform thickness.

[0079] Weigh 40g of TaC powder with a particle size of 0.5μm, 1.5g of TiC powder, 3g of epoxy resin, and 40ml of anhydrous ethanol, mix and stir, and ultrasonicate for 10min to obtain a coating suspension. Immerse the substrate material with a transition layer in the tantalum carbide suspension for 3h. Place the substrate material with the coating in a vacuum environment and dry it at 300℃ for 4h.

[0080] The dried graphite substrate with the coating is sintered in vacuum at a temperature of 1900° C. for 15 hours. After sintering, it is naturally cooled to obtain a tantalum carbide coating with uniform thickness.

[0081] The morphology of the tantalum carbide coatings prepared in Examples 2 to 5 is similar to that in Example 1, and all of them are relatively dense layers on the surface, with no cracks or through holes on the surface.

[0082] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for preparing a tantalum carbide coating for semiconductor growth, characterized in that: The steps include: The transition layer main material particles, the first sintering aid, the first binder and the first solvent are uniformly mixed to form a transition layer suspension, the transition layer suspension is placed on the surface of the substrate to form a first pre-sintered layer, and then a first vacuum sintering is performed to form the first pre-sintered layer into a transition layer; The tantalum carbide powder, the second sintering aid, the second binder and the second solvent are uniformly mixed to form a tantalum carbide layer suspension, the substrate on the surface of which the transition layer is prepared is placed in the tantalum carbide layer suspension for immersion, and then the impregnated substrate is subjected to a second vacuum sintering to obtain; Wherein, the transition layer main material particles, the first sintering aid, and the second sintering aid are carbides other than tantalum carbide, and the particle size of the transition layer main material particles is larger than the particle size of tantalum carbide powder; The non-tantalum carbide carbide includes one or more of HfC, TiC, and WC; The first binder is one or a mixture of phenolic resin, epoxy resin, graphite glue, polyvinyl alcohol, silicone resin, acrylate, polyvinyl chloride; The second binder is one or a mixture of phenolic resin, epoxy resin, graphite glue, polyvinyl alcohol, silicone resin, acrylate, polyvinyl chloride; The particle size of the main material of the transition layer is 10~100μm; The particle size of tantalum carbide powder is 0.1~10μm; The surface of the tantalum carbide coating has no cracks and no through holes.

2. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: The first solvent is one or a mixed solvent of deionized water, anhydrous ethanol, acetone, benzene, toluene, chloroform, styrene, trichloroethylene, and ethyl acetate.

3. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: The mass ratio of the transition layer main material particles, the first sintering aid, and the first binder is 60~90:1~20:1~20.

4. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: After the first pre-sintered layer is formed, a first drying is performed first, and then a first vacuum sintering is performed.

5. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 4, characterized in that: The first drying temperature is 100~600℃ and the time is 3~6 hours; The temperature of the first vacuum sintering is 1100~2500 ℃ and the time is 6~24 h.

6. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: The second solvent is one or a mixed solvent of deionized water, anhydrous ethanol, acetone, benzene, toluene, chloroform, styrene, trichloroethylene, and ethyl acetate.

7. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: The mass ratio of tantalum carbide powder, the second sintering aid, and the second binder is 70-90:1-10:1-20.

8. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: The immersion time is 1 to 4 hours; Alternatively, after impregnation, a second drying is performed first, and then a second vacuum sintering is performed.

9. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 8, characterized in that: The second drying temperature is 100~500℃ and the time is 3~6 hours.

10. The method for preparing a tantalum carbide coating for semiconductor growth according to claim 1, characterized in that: The temperature of the second vacuum sintering is 1100~2500℃, and the time is 2~24 h.

11. A tantalum carbide coating for semiconductor growth, characterized in that: Obtained by the preparation method according to any one of claims 1 to 10.

12. A crucible and / or its accessories for growing semiconductor materials, characterized in that: The tantalum carbide coating for semiconductor growth according to claim 11 is provided on the surface.

Images