Heating disc, thin film deposition apparatus and thin film deposition apparatus assembly method

Abstract

The application provides a heating disc, a thin film deposition device and an assembling method of the thin film deposition device. The heating disc comprises a substrate for carrying and heating a wafer to be processed to deposit a thin film on the back surface of the wafer, and a base arranged below the substrate to support the substrate, wherein the base is provided with a pulling member, the upper end of the pulling member is fixedly connected to the lower end of the central region of the substrate, and the pulling member provides a downward pulling force to the substrate during heating to inhibit the thermal expansion deformation of the central region of the substrate. By arranging the pulling member fixedly connected to the substrate on the base of the heating disc and providing a downward pulling force to the substrate, the application can effectively inhibit the thermal expansion deformation of the substrate, thereby improving the film forming quality on the back surface of the wafer.

Description

Technical Field

[0001] This invention relates to semiconductor device processing technology, and more particularly to a heating plate, a thin film deposition apparatus, and a method for assembling the thin film deposition apparatus. Background Technology

[0002] A heating pad is a device used to heat semiconductor wafers and is widely used in semiconductor device fabrication processes. In the backside deposition process, due to continuous bombardment with radio frequency (RF) energy, the temperature of the central region of the substrate facing the reaction chamber continuously rises, causing the substrate to expand and deform outwards. However, because the base of the heating pad facing away from the reaction chamber has a lower temperature, it experiences only a smaller amount of thermal expansion. This results in the central region of the substrate bulging upwards, affecting the uniformity of the backside deposition space and reducing the film quality on the backside. Furthermore, repeated bulging deformation of the heating pad substrate can easily lead to desoldering of the internal structure of the heating pad, thus shortening its lifespan.

[0003] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for an improved heating plate structure to suppress the thermal expansion deformation of the substrate, so as to improve the film formation quality on the back side of the wafer. Summary of the Invention

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned deficiencies in the prior art, the present invention provides a heating plate, a thin film deposition apparatus, and an assembly method for the thin film deposition apparatus. By providing a tension member that fixes and connects the substrate to the base of the heating plate, a downward pulling force is applied to the substrate to suppress thermal expansion deformation, thereby improving the film deposition quality on the back side of the wafer.

[0006] Specifically, the heating plate provided according to the first aspect of the present invention includes a substrate and a base. The substrate is used to support and heat a wafer to be processed for depositing a thin film on its back side. The base is disposed below the substrate to support the substrate. A tension member is provided on the base. The upper end of the tension member is fixedly connected to the lower end of the central region of the substrate, and provides a downward pulling force to the substrate during heating to suppress thermal expansion deformation of the central region of the substrate.

[0007] Furthermore, in some embodiments of the present invention, the substrate is provided with a plurality of vent holes. The base maintains a gap with the substrate to form a mixing chamber. The tension member is provided with a gas distribution structure. The tension member is connected to a reactive gas source, and the reactive gas provided by the reactive gas source is dispersed and transported to the mixing chamber via the gas distribution structure, and then transported to the reaction chamber above the substrate via the plurality of vent holes for thin film deposition.

[0008] Furthermore, in some embodiments of the present invention, the gas distribution structure includes a gas guide pipe, a first gas distribution port, and a second gas distribution port. A first end of the gas guide pipe is connected to the reaction gas source for obtaining the reaction gas from the reaction gas source. The first gas distribution port is used to transmit the reaction gas provided by the gas guide pipe to the edge region of the mixing chamber, and then, via a first outlet port in the edge region of the substrate, transmit the reaction gas to the edge region of the reaction chamber. The second gas distribution port is used to transmit the reaction gas provided by the gas guide pipe to the central region of the mixing chamber, and then, via a second outlet port in the central region of the substrate, transmit the reaction gas to the central region of the reaction chamber.

[0009] Furthermore, in some embodiments of the present invention, the first gas distribution port is connected to the second end of the gas guide pipe and is inclined towards the edge region of the mixing chamber, so as to directly transmit the reaction gas provided by the gas guide pipe to the edge region of the mixing chamber. The second gas distribution port is connected to the first gas distribution port, and indirectly transmits the reaction gas provided by the gas guide pipe to the central region of the mixing chamber via the first gas distribution port, so as to balance the gas flow rate between the central region and the edge region.

[0010] Furthermore, in some embodiments of the present invention, a flow-guiding baffle is provided at the outlet end of the first gas distribution port. The flow-guiding baffle extends towards the edge region of the mixing chamber to transfer the reaction gas output from the first gas distribution port to the edge region of the mixing chamber.

[0011] Furthermore, in some embodiments of the present invention, the pulling portion of the pulling member is disposed above the flow-guiding baffle to fix and connect the lower surface of the substrate. The second gas distribution hole is disposed on the side wall of the pulling portion, and obtains the reaction gas output from the first gas distribution hole through the edge region of the mixing chamber, and transmits the reaction gas upward to the second gas outlet in the central region of the substrate. Alternatively, the second gas distribution hole longitudinally passes through the pulling portion and the flow-guiding baffle to connect with the first gas distribution hole, directly obtains the reaction gas flowing through the first gas distribution hole, and transmits the reaction gas upward to the second gas outlet in the central region of the substrate.

[0012] Furthermore, in some embodiments of the present invention, the substrate is welded to the pulling portion via a plurality of predetermined positions. The predetermined positions are located on the lower surface of the substrate to weld to the upper surface of the pulling portion. The predetermined positions maintain a predetermined distance from the surrounding vents. The distribution density of the vents increases with the predetermined distance from the predetermined positions. Alternatively, the lower surface of the substrate is provided with a mounting groove. The predetermined positions are located on the inner sidewall of the mounting groove to weld to the outer sidewall of the pulling portion.

[0013] Furthermore, in some embodiments of the present invention, the gas distribution structure is also connected to a carrier gas source for dispersing and transmitting the carrier gas provided by the carrier gas source to the mixing chamber, and then transmitting it to the reaction chamber above the substrate via the plurality of gas outlets, so as to purge the gas guide pipe, the flow baffle, the mixing chamber and / or the reaction chamber.

[0014] Furthermore, the thin film deposition apparatus provided according to a second aspect of the present invention includes a reaction chamber. The heating plate provided according to the first aspect of the present invention is disposed within the reaction chamber.

[0015] Furthermore, the assembly method of the thin film deposition apparatus provided according to the third aspect of the present invention includes the following steps: fixing the upper end of the pull member to the lower end of the central region of the substrate of the heating plate; fixing the lower end of the pull member to the upper end of the central region of the base of the heating plate, and fixing the edge region of the substrate to the edge region of the base; connecting the gas distribution structure of the pull member to an external gas pipe; and connecting the lower end of the base to the main frame of the thin film deposition apparatus. Attached Figure Description

[0016] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0017] Figure 1 A cross-sectional schematic diagram of a heating plate provided according to some embodiments of the present invention is shown.

[0018] Figure 2 A cross-sectional schematic diagram of a gas distribution structure provided according to some embodiments of the present invention is shown.

[0019] Figure 3 A cross-sectional schematic diagram of a gas distribution structure provided according to some embodiments of the present invention is shown.

[0020] Figure 4 A schematic flowchart of a thin film deposition apparatus assembly method according to some embodiments of the present invention is shown.

[0021] Figure Labels

[0022] 11 base plate

[0023] 12 bases

[0024] 13 Heating wire

[0025] 141 Air delivery tube

[0026] 142 First vent

[0027] 143 Second vent

[0028] 151 First air outlet

[0029] 152 Second air outlet

[0030] 21 Drainage baffle

[0031] x Preset distance

[0032] 31 Drainage baffle Detailed Implementation

[0033] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0034] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0035] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0036] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0037] As described above, in the backside deposition process of a wafer, due to continuous bombardment by radio frequency (RF) energy, the temperature of the central region of the substrate facing the reaction chamber continuously rises, causing the substrate to expand and deform outwards. However, because the base of the heating pad facing away from the reaction chamber has a lower temperature, it can only undergo a smaller amount of thermal expansion, resulting in the central region of the substrate bulging upwards. This affects the uniformity of the backside deposition space and reduces the film quality on the backside of the wafer. Furthermore, the repeated bulging deformation of the heating pad substrate can easily lead to desoldering of the internal structure of the heating pad, thereby shortening the lifespan of the heating pad.

[0038] To overcome the aforementioned deficiencies in the prior art, the present invention provides a heating plate, a thin film deposition apparatus, and an assembly method for the thin film deposition apparatus. By providing a tension member that fixes and connects the substrate to the base of the heating plate, a downward pulling force is applied to the substrate to suppress thermal expansion deformation, thereby improving the film deposition quality on the back side of the wafer.

[0039] In some non-limiting embodiments, the heating plate provided in the first aspect of the present invention can be assembled using the assembly method of the thin film deposition apparatus provided in the third aspect of the present invention. Further, the heating plate can be configured within the reaction chamber of the thin film deposition apparatus provided in the second aspect of the present invention.

[0040] Please refer to the reference. Figures 1 to 3 . Figure 1 A cross-sectional schematic diagram of a heating plate provided according to some embodiments of the present invention is shown. Figure 2 A cross-sectional schematic diagram of a gas distribution structure provided according to some embodiments of the present invention is shown. Figure 3 A cross-sectional schematic diagram of a gas distribution structure provided according to some embodiments of the present invention is shown.

[0041] exist Figure 1 In the illustrated embodiment, the heating plate provided by the first aspect of the present invention may be configured with a substrate 11 and a base 12. The substrate 11 has at least one heating wire 13 for supporting and heating the wafer to be processed, so as to deposit a thin film on its back side. The base 12 is disposed below the substrate 11 to support it. The base 12 has a tension member, the upper end of which is fixedly connected to the lower end of the central region of the substrate 11, providing a downward pulling force to the substrate 11 during heating to suppress thermal expansion deformation of the central region of the substrate 11.

[0042] Furthermore, in some embodiments of the present invention, the substrate 11 and the base 12 maintain a gap to form a mixing chamber between the substrate and the base. Correspondingly, the substrate 11 may be provided with a plurality of first vent holes 151 located in the edge region of the substrate and a second vent hole 152 located in the center region of the substrate. The tensioning member is provided with a gas distribution structure. The gas distribution structure disperses and transmits the reaction gas provided by the reaction gas source into the mixing chamber, and then transmits it through the plurality of vent holes 151-152 to the reaction chamber above the substrate 11 for thin film deposition.

[0043] Furthermore, such as Figures 1 to 3 As shown, the gas distribution structure includes a gas guide pipe 141, a first gas distribution port 142, and a second gas distribution port 143. The first end of the gas guide pipe 141 is connected to a reaction gas source for obtaining reaction gas from the source. The first gas distribution port 142 is used to transport the reaction gas provided by the gas guide pipe 141 to the edge region of the mixing chamber, and then, via a first gas outlet 151 in the edge region of the substrate 11, to the edge region of the reaction chamber. The second gas distribution port 143 is used to transport the reaction gas provided by the gas guide pipe 141 to the central region of the mixing chamber, and then, via a second gas outlet 152 in the central region of the substrate 11, to the central region of the reaction chamber.

[0044] Furthermore, the first gas distribution port 142 can be directly connected to the second end of the gas guide pipe 141 and is inclined towards the edge region of the mixing chamber to directly transmit the reaction gas provided by the gas guide pipe 141 to the edge region of the mixing chamber. The second gas distribution port 143 can be connected to the first gas distribution port 142, and indirectly transmit the reaction gas provided by the gas guide pipe 141 to the central region of the mixing chamber through the first gas distribution port 142 to balance the gas flow rate between the central region and the edge region.

[0045] Furthermore, in some embodiments of the present invention, the gas distribution structure 14 can also be connected to a carrier gas source. Thus, during the purging stages before and after the thin film deposition process, technicians can also adjust the switching valve to disperse and transmit the carrier gas provided by the carrier gas source to the mixing chamber, and then transmit it to the reaction chamber above the substrate 11 through multiple gas outlets, in order to purge the gas guide pipe, baffle, mixing chamber and / or reaction chamber.

[0046] In addition, Figure 2 In the illustrated embodiment, the outlet end of the first gas distribution hole 142 may preferably be provided with a guide baffle 21 extending towards the edge region of the mixing chamber, so as to transfer the reaction gas output from the first gas distribution hole 142 to the edge region of the mixing chamber. The pulling part of the pulling member is provided above the guide baffle 21 to fix and connect the lower surface of the substrate 11. Here, the second gas distribution hole 143 may be provided on the side wall of the pulling part, to obtain the reaction gas output from the first gas distribution hole 142 through the edge region of the mixing chamber, and to transfer the reaction gas upward to the second gas outlet 152 in the central region of the substrate 11.

[0047] Thus, a portion of the reactant gas supplied by the gas guide pipe 141 can be directly discharged from the first gas distribution hole 142, diffused to the edge region of the mixing chamber after being blocked by the flow guide baffle 21, and then transported to the edge region of the reaction chamber above the substrate 11 via the first gas outlet 151 in the edge region of the substrate 11. Simultaneously, another portion of the reactant gas supplied by the gas guide pipe 141 can be diverted to the second gas distribution hole 143 when passing through the side wall of the traction section, transported upwards, and then transported to the center region of the reaction chamber above the substrate 11 via the second gas outlet 143 in the center region of the substrate 11. Therefore, the first gas distribution hole 142 and the second gas distribution hole 143 not only serve to divert and diffuse the gas, but also overcome the shortcomings of conventional diversion structures where the gas flow resistance is low in the central region and high in the edge region, balancing the gas flow resistance in the central and edge regions to improve the uniformity of the reactant gas flow rate.

[0048] Furthermore, the substrate 11 can be welded to the pulling part via multiple preset positions. Specifically, the preset position can be located on the lower surface of the substrate 11 to weld to the upper surface of the pulling part. Further, the preset position can maintain a preset distance x from the surrounding vents 151-152 to avoid solder clogging the surrounding vents 151-152 and affecting the uniformity of airflow.

[0049] Furthermore, adapting to the above-mentioned design of the air outlet distribution with a preset distance x, the distribution density of each air outlet 151~152 can increase as the preset distance x near the preset position decreases, thereby improving the uniformity of the reaction gas flow rate.

[0050] Similarly, in Figure 3In the illustrated embodiment, the outlet end of the first gas distribution hole 142 may also be provided with a guide baffle 31 extending towards the edge region of the mixing chamber, so as to transfer the reaction gas output from the first gas distribution hole 142 to the edge region of the mixing chamber. The pulling part of the pulling member may also be provided above the guide baffle 31 to fix and connect the lower surface of the substrate 11. Here, the second gas distribution hole 143 can longitudinally pass through the pulling part and the guide baffle 31 to connect to the first gas distribution hole 142, directly obtain the reaction gas flowing through the first gas distribution hole 142, and transfer the reaction gas upward to the second gas outlet 152 in the central region of the substrate 11.

[0051] Thus, a portion of the reactant gas supplied by the gas guide pipe 141 can be directly discharged from the first gas distribution hole 142, diffused to the edge region of the mixing chamber after being blocked by the flow guide baffle 31, and then transported to the edge region of the reaction chamber above the substrate 11 via the first gas outlet 151 in the edge region of the substrate 11. Simultaneously, another portion of the reactant gas supplied by the gas guide pipe 141 can be diverted to the second gas distribution hole 143 at the connection point between the first and second gas distribution holes 142 and then transported upwards via the second gas outlet 152 in the center region of the substrate 11 to the center region of the reaction chamber above the substrate 11. Therefore, the first and second gas distribution holes 142 and 143 can overcome the shortcomings of conventional diversion structures, such as low gas flow resistance in the central region and high gas flow resistance in the edge region, while simultaneously diverting and diffusing the reactant gas, thus balancing the gas flow resistance in the central and edge regions and improving the uniformity of the reactant gas flow rate.

[0052] In addition, Figure 3 In the illustrated embodiment, the substrate 11 can also be welded to the pulling part via multiple preset positions. Specifically, the lower surface of the substrate 11 can be provided with a mounting groove. The preset position is located on the inner sidewall of the mounting groove to weld to the outer sidewall of the pulling part. The vent holes 151-152 can be evenly distributed on the substrate 11, thereby making the distribution of reaction gas transmitted to the reaction chamber above the substrate more uniform.

[0053] Furthermore, the thin film deposition apparatus provided according to the second aspect of the present invention includes a reaction chamber. This reaction chamber is equipped with a heating plate as described in any of the above embodiments and connected to a reaction gas source, enabling the heating of the wafer and the surrounding reaction gas via the heating plate after obtaining reaction gas from the reaction gas source, thereby depositing a thin film on the front and / or back side of the wafer.

[0054] In addition, please refer to Figure 4 , Figure 4 A schematic flowchart of a thin film deposition apparatus assembly method according to some embodiments of the present invention is shown.

[0055] like Figure 4As shown, during the assembly of the thin film deposition equipment, the technician can first fix the upper end of the tension member to the lower end of the central region of the substrate 11 of the heating plate provided in the first aspect of the present invention. Then, the technician can fix the lower end of the tension member to the upper end of the central region of the base of the heating plate, and fix the edge region of the substrate 11 to the edge region of the base 12. Afterwards, the technician can connect the gas distribution structure of the tension member to an external gas pipe, and connect the lower end of the base 12 to the main frame of the thin film deposition equipment to complete the assembly of the thin film deposition equipment.

[0056] In summary, the heating plate, thin film deposition equipment, and thin film deposition equipment assembly method provided by the present invention can all improve the film deposition quality on the back side of the wafer by providing a downward pulling force to the substrate through a tension member that is fixedly connected to the substrate on the base of the heating plate.

[0057] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0058] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heating plate, characterized in that, include: A substrate is used to support and heat the wafer to be processed in order to deposit a thin film on its back side; as well as A base is provided below the substrate to support the substrate. The base is provided with a tension member. The upper end of the tension member is fixedly connected to the lower end of the central region of the substrate. During heating, the tension member provides a downward pulling force to the substrate to suppress thermal expansion deformation of the central region of the substrate.

2. The heating plate as described in claim 1, characterized in that, The substrate has multiple air vents, and the base maintains a gap with the substrate to form a gas mixing chamber. The pulling member has a gas distribution structure. The tensioning member is connected to the reaction gas source, and the reaction gas provided by the reaction gas source is dispersed and transported to the mixing chamber through the gas distribution structure, and then transported to the reaction chamber above the substrate through the plurality of gas outlet holes for thin film deposition.

3. The heating plate as described in claim 2, characterized in that, The gas distribution structure includes a gas guide pipe, a first gas distribution port, and a second gas distribution port, wherein... The first end of the gas guide tube is connected to the reaction gas source for obtaining the reaction gas from the reaction gas source. The first gas distribution hole is used to transport the reaction gas provided by the gas guide pipe to the edge region of the mixing chamber, and to transport the reaction gas to the edge region of the reaction chamber via the first gas outlet in the edge region of the substrate. The second gas distribution hole is used to transport the reaction gas provided by the gas guide pipe to the central region of the gas mixing chamber, and to transport the reaction gas to the central region of the reaction chamber via the second gas outlet in the central region of the substrate.

4. The heating plate as described in claim 3, characterized in that, The first gas distribution port is connected to the second end of the gas guide pipe and is inclined towards the edge region of the mixing chamber to directly transmit the reaction gas provided by the gas guide pipe to the edge region of the mixing chamber. The second gas distribution port is connected to the first gas distribution port, and the reaction gas provided by the gas guide pipe is indirectly transmitted to the central region of the mixing chamber through the first gas distribution port to balance the gas flow rate between the central region and the edge region.

5. The heating plate as described in claim 4, characterized in that, The outlet end of the first gas distribution hole is provided with a flow guide baffle, which extends towards the edge region of the mixing chamber to transfer the reaction gas output from the first gas distribution hole to the edge region of the mixing chamber.

6. The heating plate as described in claim 5, characterized in that, The pulling part of the pulling member is located above the drainage baffle to fix and connect the lower surface of the substrate. The second gas distribution hole is located on the side wall of the pulling part. It receives the reaction gas output from the first gas distribution hole through the edge region of the mixing chamber and transmits the reaction gas upward to the second gas outlet in the central region of the substrate, or The second gas distribution hole extends longitudinally through the pulling part and the flow guide baffle to connect with the first gas distribution hole, directly obtain the reaction gas flowing through the first gas distribution hole, and transmit the reaction gas upward to the second gas outlet in the central region of the substrate.

7. The heating plate as described in claim 6, characterized in that, The substrate is welded to the tensioning portion at multiple predetermined positions, wherein... The preset position is located on the lower surface of the substrate to weld the upper surface of the pulling part. The preset position maintains a preset distance from the surrounding vents, wherein the distribution density of the vents increases with the preset distance from the preset position, or The lower surface of the substrate is provided with a mounting groove, and the preset position is located on the inner sidewall of the mounting groove to weld and connect the outer sidewall of the pulling part.

8. The heating plate as described in claim 5, characterized in that, The gas distribution structure is also connected to a carrier gas source, which is used to disperse and transmit the carrier gas provided by the carrier gas source to the mixing chamber, and then transmit it to the reaction chamber above the substrate through the plurality of gas outlets, so as to purge the gas guide pipe, the flow baffle, the mixing chamber and / or the reaction chamber.

9. A thin film deposition apparatus, characterized in that, include: A reaction chamber, wherein a heating plate is disposed as described in any one of claims 1 to 8.

10. A method for assembling a thin film deposition apparatus, characterized in that, Includes the following steps: The upper end of the tension member is fixedly connected to the lower end of the central area of ​​the heating plate substrate; The lower end of the tensioning member is fixedly connected to the upper end of the central region of the base of the heating plate, and the edge region of the substrate is fixedly connected to the edge region of the base. Connect the air distribution structure of the traction member to an external air pipe; as well as The lower end of the base is connected to the main frame of the thin film deposition apparatus.

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