一种高性能Si3N4陶瓷基板及其制备方法
By using Gd3Si2C2 powder and β-Si3N4 seed crystals as non-oxide sintering aids in Si3N4 ceramic substrates, the sintering process and grain structure were optimized, overcoming the shortcomings of Si3N4 ceramic substrates in terms of high thermal conductivity and mechanical properties, and realizing the preparation of high-performance Si3N4 ceramic substrates.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- GUANGDONG UNIV OF TECH
- Filing Date
- 2024-04-22
- Publication Date
- 2026-07-17
AI Technical Summary
Existing Si3N4 ceramic substrates are insufficient in balancing high thermal conductivity and mechanical properties, making it difficult to meet the requirements of high-voltage, high-current, high-power-density, and small-size power electronic devices.
Gd3Si2C2 powder and β-Si3N4 seed crystals were used as non-oxide sintering aids to generate Gd3Si2C2 powder through in-situ reaction. Combined with ball milling, dry pressing and cold isostatic pressing, high-performance Si3N4 ceramic substrates were prepared, and the N/O ratio and grain structure during the sintering process were optimized.
It significantly improves the thermal conductivity and mechanical properties of Si3N4 ceramics, with thermal conductivity reaching over 110 W·m-1·K-1 and strength reaching over 950 MPa, exhibiting outstanding advantages such as high thermal conductivity, high strength, and high toughness.
Smart Images
Figure CN118388243B_ABST