A method for removing oxygen impurities from diamond wire saw silicon waste material while simultaneously producing high purity binary silicides

Abstract

The present application relates to a method for removing oxygen impurities from diamond wire cutting silicon waste while preparing high-purity binary silicides, belonging to the technical field of silicon waste recycling and silicon material preparation. The present application uniformly mixes diamond wire cutting silicon waste and pure metal material X to obtain a mixture, and the mixture is heated to complete melting in an inert atmosphere by electromagnetic induction to obtain a binary silicide melt; the pure metal material X is Ni, Fe, Co, Mn, Ti or Cr; the binary silicide melt is heat treated and smelted to realize electromagnetic separation and deoxidation, obtaining an alloy ingot containing binary silicide X-Si and oxygen-rich residue, and the binary silicide X-Si and oxygen-rich residue in the alloy ingot are separated to obtain high-purity binary silicide alloy; the binary silicide X-Si is NiSi2, NiSi, FeSi2, FeSi, Fe5Si3, Co2Si, CoSi, CoSi2, Mn 11 Si 19 , MnSi, Mn5Si3, Mn3Si, TiSi2, TiSi, CrSi2, CrSi. The present application can remove oxygen impurities from diamond wire cutting silicon waste and recycle it to prepare high-purity binary silicide alloy.

Description

Technical Field

[0001] This invention relates to a method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides, belonging to the technical fields of silicon waste recycling and silicon material preparation. Background Technology

[0002] With the gradual depletion of fossil fuels and the advancement of carbon oxide emission reduction efforts, silicon wafer solar cells, as a typical energy transmission system, have received widespread attention due to their advantages of being clean, safe, and abundant. Silicon wafers are produced by diamond wire cutting of 6N pure solar-grade silicon (SoG-Si) ingots. However, nearly 35-40% of the silicon is lost during the cutting process, generating diamond wire-cut silicon waste. Because its particle size is smaller than PM2.5, it is considered solid waste harmful to the environment and human health. If not treated and utilized in a timely manner, it will pollute the environment and waste resources. The main component of diamond wire-cut silicon waste is oxygen, existing in the form of SiO2. Currently, researchers have adopted various methods to recycle diamond wire-cut silicon waste. For example, it can be recycled through vacuum refining, hydrogen bromide treatment, induction melting, Al-Si alloying, H2SO4 or HCl acid washing, carbothermic reduction, and ball milling. However, most of these methods are not ideal for removing oxygen impurities (SiO2 layer) and have not yet been used in industrial production.

[0003] Silicides (NiSi, FeSi2, CoSi2, Mn) 11 Si 19 Binary silicides (such as NiSi, CrSi, etc.) refer to intermetallic compounds formed by silicon and metals, possessing characteristics such as high melting point, high hardness, high stability, semiconductor properties, and optical properties. Therefore, they have wide applications in industry, electronics, and materials science. For example, NiSi is widely used in aerospace, automotive manufacturing, electronics, and electrical appliances; FeSi2 is widely used in metallurgy, electronics, and materials science; and CoSi2 is widely used in integrated circuits, aerospace, and medical devices. These binary silicides are typically prepared using high-purity metals as raw materials, resulting in high production costs. Summary of the Invention

[0004] To address the shortcomings of existing technologies, such as poor deoxidation effect of silicon waste from diamond wire cutting and high cost of silicide preparation, this invention proposes a method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides. The method involves uniformly mixing the silicon waste from diamond wire cutting with a pure metal material X (X: Ni, Fe, Co, Mn, Ti, or Cr) and then melting it using electromagnetic induction heating. Since both silicon and SiO2 have low electrical conductivity, they are difficult to separate using electromagnetic force. However, the addition of the pure metal material X can improve the electrical conductivity of the silicon-based alloy melt, thereby achieving electromagnetic separation and deoxidation of the melt.

[0005] A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides, the specific steps of which are as follows:

[0006] (1) The silicon waste from diamond wire cutting and the pure metal material X are mixed evenly to obtain a mixture. The mixture is then heated by electromagnetic induction in an inert atmosphere until it is completely melted to obtain a binary silicide melt. The pure metal material X is Ni, Fe, Co, Mn, Ti or Cr.

[0007] (2) The binary silicide material melt is subjected to electromagnetic deoxidation smelting to separate oxygen, and an alloy ingot containing binary silicide X-Si and oxygen-rich residue is obtained. The binary silicide X-Si and oxygen-rich residue in the alloy ingot are separated to obtain a high-purity binary silicide alloy. The binary silicide X-Si is a binary Ni-Si compound, a binary Fe-Si compound, a binary Co-Si compound, a binary Mn-Si compound, a binary Ti-Si compound, or a binary Cr-Si compound.

[0008] In step (2), the binary Ni-Si compound is one or both of NiSi2 and NiSi; the binary Fe-Si compound is one or more of FeSi2, FeSi, and Fe5Si3; the binary Co-Si compound is one or more of Co2Si, CoSi, and CoSi2; and the binary Mn-Si compound is Mn 11 Si 19 One or more of MnSi, Mn5Si3 and Mn3Si, the binary Ti-Si compounds are one or more of TiSi2 and TiSi, and the binary Cr-Si compounds are one or two of CrSi2 and CrSi.

[0009] In step (1), the amount of Ni added is 48.86–65.56 wt.% of the mixture, the amount of Fe added is 47.70–75.24 wt.% of the mixture, the amount of Co added is 48.98–79.33 wt.% of the mixture, the amount of Mn added is 50.89–84.32 wt.% of the mixture, the amount of Ti added is 43.80–60.92 wt.% of the mixture, and the amount of Cr added is 45.85–62.87 wt.% of the mixture.

[0010] The electromagnetic deoxidation melting in step (2) is carried out at a temperature of 1350–1700°C for 0.5–1.5 hours.

[0011] The principle of oxygen impurity removal from silicon waste from diamond wire cutting: Both silicon and SiO2 have low electrical conductivity, making them difficult to separate by electromagnetic force. By adding pure metal material X (X: Ni, Fe, Co, Mn, Ti, or Cr) to increase the electrical conductivity of the alloy melt, and because the conductivity of the alloy is much greater than that of SiO2, the alloy melt moves along the direction of the electromagnetic force, while the SiO2 slag particles migrate in the opposite direction of the electromagnetic force and accumulate on both sides of the alloy. This achieves the dual purpose of separating oxygen impurities from silicon waste from diamond wire cutting and preparing high-purity binary silicides.

[0012] The beneficial effects of this invention are:

[0013] (1) In the electromagnetic separation process of the present invention, there is electromagnetic force. Due to the difference in electrical conductivity between slag particles and molten metal, the two migrate in different directions, eventually forming a slag-metal separation interface. Oxygen impurities in diamond wire cutting silicon waste migrate to the vicinity of the melt in the form of SiO2 and are removed, thereby achieving enhanced removal of oxygen impurities.

[0014] (2) This invention achieves the deoxidation of silicon waste from diamond wire cutting and the preparation of high-purity binary silicides X-Si (NiSi2, NiSi, FeSi2, FeSi, Fe5Si3, Co2Si, CoSi, CoSi2, Mn) 11 Si 19 , MnSi, Mn5Si3, Mn3Si, TiSi2, TiSi, CrSi2, CrSi). Attached Figure Description

[0015] Figure 1 This is a process flow diagram of the present invention;

[0016] Figure 2 This is a longitudinal macroscopic view of the separation of the alloy and slag after FeSi2 electromagnetic induction melting and electromagnetic deoxidation in Example 1.

[0017] Figure 3 EDS-Mapping at the boundary between the CoSi2 alloy and the slag agglomeration layer in Example 2;

[0018] Figure 4 The image shows the XRD analysis results of the oxygen-enriched residue from Example 2.

[0019] Figure 5 The image shows the XRD analysis results of the oxygen-enriched residue from Example 3. Detailed Implementation

[0020] The present invention will be further described in detail below with reference to specific embodiments, but the scope of protection of the present invention is not limited to the content described.

[0021] Example 1: A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides (see...) Figure 1 The specific steps are as follows:

[0022] (1) A mixture of diamond wire-cut silicon waste with a purity of 91.2% (oxygen content of 4.7%) and pure metal material X (pure iron with a purity of 99.95%) is uniformly mixed to obtain a mixture. The mixture is then electromagnetically induction heated to 1450-1650°C in an inert atmosphere (argon) to completely melt the mixture to obtain a binary silicide melt. The pure iron content in the mixture is 47.7 wt.%, 64.59 wt.%, and 75.24 wt.%, respectively.

[0023] (2) A binary silicide melt with a pure iron content of 47.7 wt.% was subjected to electromagnetic deoxidation melting at 1450℃ for 1 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide FeSi2 and oxygen-rich residue; the longitudinal macroscopic diagram of the separation of FeSi2 alloy from slag after electromagnetic induction melting and electromagnetic deoxidation is shown in the figure. Figure 2 As can be seen from the macroscopic diagram at the FeSi2-slag interface, oxygen impurities in the silicon waste are separated to both sides of the crucible, and no oxygen-rich residue was observed in the alloy.

[0024] A binary silicide melt with a pure iron content of 64.59 wt.% was subjected to electromagnetic deoxidation melting at 1550℃ for 1 hour to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide FeSi and oxygen-rich residue.

[0025] A binary silicide melt with a pure iron content of 75.24 wt.% was subjected to electromagnetic deoxidation melting at 1650℃ for 1 hour to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide Fe5Si3 and oxygen-rich residue.

[0026] (3) Different alloy ingots were cut and separated along the slag-gold interface to obtain binary silicides FeSi2, FeSi, and Fe5Si3, as well as oxygen-rich residue. Analysis showed that the FeSi2 binary silicide in this embodiment had a purity of 99.16 wt.%, with the main impurities and their contents being 0.1074 wt.% Al, 0.0211 wt.% Ca, 0.021 wt.% Mg, and 0.0189 wt.% Cr, and an oxygen content of 0.65 wt.%. The FeSi binary silicide had a purity of 99.1 wt.%, with the main impurities and their contents being 0.1 wt.% Al, 0.02 wt.% Ca, 0.019 wt.% Mg, and 0.018 wt.% Cr, and an oxygen content of 0.72 wt.%. The binary silicide Fe5Si3 has a purity of 99.02 wt.%, with the main impurities and their contents being 0.09 wt.% Al, 0.018 wt.% Ca, 0.015 wt.% Mg, and 0.013 wt.% Cr, respectively; the oxygen content is 0.8 wt.%.

[0027] Example 2: A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides (see Example 2). Figure 1 The specific steps are as follows:

[0028] (1) A mixture of diamond wire-cut silicon waste with a purity of 91.2% (oxygen content of 4.7%) and pure metal material X (pure cobalt with a purity of 99.98%) is uniformly mixed to obtain a mixture. The mixture is then electromagnetically induction heated to 1500-1600°C in an inert atmosphere (helium) to completely melt the mixture and obtain a binary silicide melt. The pure cobalt content in the mixture is 48.98 wt.%, 65.75 wt.%, and 79.33 wt.%, respectively.

[0029] (2) A binary silicide melt with a pure cobalt content of 48.98 wt.% was subjected to electromagnetic deoxidation melting at 1550℃ for 0.5 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide CoSi2 and oxygen-rich residue; the EDS-Mapping at the boundary between the CoSi2 alloy and the slag agglomeration layer in this embodiment is shown in [reference needed]. Figure 3 No significant amount of oxygen was detected inside the alloy, but a large amount of oxygen impurities were detected in the residue. The main phase in the oxygen-rich residue was SiO2, indicating that oxygen impurities in the silicon waste were separated into the residue (see...). Figure 4 );

[0030] A binary silicide melt with a pure cobalt content of 65.75 wt.% was subjected to electromagnetic deoxidation melting at 1600℃ for 0.5 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide CoSi and oxygen-rich residue.

[0031] A binary silicide melt with a pure cobalt content of 79.33 wt.% was subjected to electromagnetic deoxidation melting at 1500℃ for 0.5 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide Co2Si and oxygen-rich residue.

[0032] (3) Different alloy ingots were cut and separated along the slag-gold interface to obtain binary silicides CoSi2, CoSi, and Co2Si, as well as oxygen-rich residue. Analysis showed that the purity of the binary silicide CoSi2 in this embodiment was 99.6 wt.%, with the main impurities and their contents being 0.064 wt.% Al, 0.023 wt.% Ca, 0.021 wt.% Mg, and 0.016 wt.% Cr, respectively; the oxygen content was 0.25 wt.%; and the purity of the binary silicide CoSi was... The purity of the binary silicide Co₂Si is 99.4 wt.%, with the main impurities and their contents being 0.06 wt.% Al, 0.02 wt.% Ca, 0.019 wt.% Mg, and 0.013 wt.% Cr, respectively; the oxygen content is 0.47 wt.%.

[0033] Example 3: A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides (see...) Figure 1 The specific steps are as follows:

[0034] (1) A mixture of 91.2% pure diamond wire-cut silicon waste (oxygen content of 4.7%) and pure metal material X (pure nickel with a purity of 99.9%) is uniformly mixed to obtain a mixture. The mixture is then electromagnetically induction heated to 1350-1450°C in an inert atmosphere (argon) to completely melt the mixture to obtain a binary silicide melt. The pure nickel content in the mixture is 48.86 wt.% and 65.56 wt.%.

[0035] (2) The binary silicide melt with a pure nickel content of 48.86 wt.% was kept at 1350℃ for electromagnetic deoxidation melting for 1 h to achieve electromagnetic separation deoxidation, and an alloy ingot containing binary silicide NiSi2 and oxygen-rich residue was obtained.

[0036] A binary silicide melt with a pure nickel content of 65.56 wt.% was subjected to electromagnetic deoxidation melting at 1450℃ for 1 hour to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide NiSi and oxygen-rich residue.

[0037] (3) Different alloy ingots were cut and separated along the slag-gold interface to obtain binary silicides NiSi2, NiSi, and oxygen-enriched residue; the XRD analysis results of the oxygen-enriched residue in this embodiment are shown in the figure. Figure 5 The main phase in the oxygen-rich residue of NiSi system is also SiO2, indicating that oxygen impurities in silicon waste are separated into the residue.

[0038] Analysis revealed that the purity of the binary silicide NiSi2 in this embodiment was 99.26 wt.%, with the main impurities and their contents being 0.11 wt.% Al, 0.023 wt.% Ca, 0.021 wt.% Mg, and 0.02 wt.% Cr, respectively; and an oxygen content of 0.554 wt.%. The purity of the binary silicide NiSi was 99.02 wt.%, with the main impurities and their contents being 0.105 wt.% Al, 0.0221 wt.% Ca, 0.019 wt.% Mg, and 0.019 wt.% Cr, respectively; and an oxygen content of 0.736 wt.%.

[0039] Example 4: A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides (see Example 4). Figure 1 The specific steps are as follows:

[0040] (1) A mixture of diamond wire-cut silicon waste with a purity of 91.2% (oxygen content of 4.7%) and pure metal material X (pure manganese with a purity of 99.95%) is uniformly mixed to obtain a mixture. The mixture is then electromagnetically induction heated to 1400-1500°C in an inert atmosphere (argon) to completely melt the mixture and obtain a binary silicide melt. The pure manganese content in the mixture is 50.89 wt.%, 64.2 wt.%, 74.91 wt.%, and 84.32 wt.%.

[0041] (2) A binary silicide melt with a pure manganese content of 50.89 wt.% was subjected to electromagnetic deoxidation melting at 1400℃ for 1.5 h to achieve electromagnetic separation and deoxidation, yielding a binary silicide containing Mn. 11 Si 19 Alloy ingots containing oxygen-rich residues;

[0042] A binary silicide melt with a pure manganese content of 64.2 wt.% was subjected to electromagnetic deoxidation melting at 1450℃ for 1.5 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide MnSi and oxygen-rich residue.

[0043] A binary silicide melt with a pure manganese content of 74.91 wt.% was subjected to electromagnetic deoxidation melting at 1500℃ for 1.5 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide Mn5Si3 and oxygen-rich residue.

[0044] A binary silicide melt with a pure manganese content of 84.32 wt.% was subjected to electromagnetic deoxidation melting at 1450℃ for 1.5 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide Mn3Si and oxygen-rich residue.

[0045] (3) Different alloy ingots were cut and separated along the slag-gold interface to obtain binary silicide Mn. 11 Si 19 MnSi, Mn5Si3, Mn3Si and oxygen-rich residue; after testing and analysis, the binary silicide Mn in this embodiment... 11 Si 19 The purity of the binary silicide MnSi is 99.29 wt.%, with the main impurities and their contents being 0.11 wt.% Al, 0.02 wt.% Ca, 0.015 wt.% Mg, and 0.014 wt.% Cr, respectively; the oxygen content is 0.54 wt.%. The purity of the binary silicide MnSi is 99.3 wt.%, with the main impurities and their contents being 0.1 wt.% Al, 0.019 wt.% Ca, 0.013 wt.% Mg, and 0.01 wt.% Cr, respectively; the oxygen content is 0.55 wt.%. The purity of 5Si3 is 99.1 wt.%, and the main impurities and their contents are 0.09 wt.% Al, 0.018 wt.% Ca, 0.011 wt.% Mg, and 0.008 wt.% Cr, respectively; the oxygen content is 0.75 wt.%. The purity of the binary silicide Mn3Si is 99.07 wt.%, and the main impurities and their contents are 0.08 wt.% Al, 0.017 wt.% Ca, 0.01 wt.% Mg, and 0.006 wt.% Cr, respectively; the oxygen content is 0.75 wt.%.

[0046] Example 5: A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides (see Example 5). Figure 1 The specific steps are as follows:

[0047] (1) A mixture of diamond wire-cut silicon waste with a purity of 91.2% (oxygen content of 4.7%) and pure metal material X (pure titanium with a purity of 99.98%) is uniformly mixed to obtain a mixture. The mixture is then electromagnetically induction heated to 1650-1700°C in an inert atmosphere (argon) to completely melt the mixture to obtain a binary silicide melt. The pure titanium content in the mixture is 43.80 wt.% and 60.92 wt.%.

[0048] (2) The binary silicide melt with a pure titanium content of 43.80 wt.% was held at 1650℃ for electromagnetic deoxidation melting for 1.2 h to achieve electromagnetic separation deoxidation, and an alloy ingot containing binary silicide TiSi2 and oxygen-rich residue was obtained.

[0049] A binary silicide melt with a pure titanium content of 61.19 wt.% was subjected to electromagnetic deoxidation melting at 1700℃ for 1.2 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide TiSi and oxygen-rich residue.

[0050] (3) Different alloy ingots were cut and separated along the slag-gold interface to obtain binary silicides TiSi2, TiSi and oxygen-rich residue;

[0051] Analysis revealed that the purity of the binary silicide TiSi2 in this embodiment was 99.2 wt.%, with the main impurities and their contents being 0.12 wt.% Al, 0.015 wt.% Ca, 0.02 wt.% Mg, and 0.01 wt.% Cr, respectively; and an oxygen content of 0.62 wt.%. The purity of the binary silicide TiSi was 99 wt.%, with the main impurities and their contents being 0.1 wt.% Al, 0.013 wt.% Ca, 0.018 wt.% Mg, and 0.005 wt.% Cr, respectively; and an oxygen content of 0.84 wt.%.

[0052] Example 6: A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides (see Example 6) Figure 1 The specific steps are as follows:

[0053] (1) A mixture of diamond wire-cut silicon waste with a purity of 91.2% (oxygen content of 4.7%) and pure metal material X (pure chromium with a purity of 99.98%) is uniformly mixed to obtain a mixture. The mixture is then electromagnetically induction heated to 1500-11650℃ in an inert atmosphere (argon) to completely melt the mixture to obtain a binary silicide melt. The pure chromium content in the mixture is 45.85 wt.% and 62.87 wt.%.

[0054] (2) The binary silicide melt with a pure chromium content of 45.85 wt.% was kept at 1500℃ for electromagnetic deoxidation melting for 0.8h to achieve electromagnetic separation deoxidation, and an alloy ingot containing binary silicide CrSi2 and oxygen-rich residue was obtained.

[0055] A binary silicide melt with a pure chromium content of 62.87 wt.% was subjected to electromagnetic deoxidation melting at 1650℃ for 0.8 h to achieve electromagnetic separation deoxidation, resulting in an alloy ingot containing binary silicide CrSi and oxygen-rich residue.

[0056] (3) Different alloy ingots were cut and separated along the slag-gold interface to obtain binary silicides CrSi2, CrSi and oxygen-rich residue.

[0057] Analysis revealed that the purity of the binary silicide CrSi in this embodiment was 99.1 wt.%, with the main impurities and their contents being 0.11 wt.% Al, 0.021 wt.% Ca, 0.012 wt.% Mg, and 0.013 wt.% Cr, respectively; and an oxygen content of 0.72 wt.%. The purity of the binary silicide CrSi2 was 99.34 wt.%, with the main impurities and their contents being 0.12 wt.% Al, 0.02 wt.% Ca, 0.01 wt.% Mg, and 0.01 wt.% Cr, respectively; and an oxygen content of 0.49 wt.%.

[0058] The specific embodiments of the present invention have been described in detail above. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. A method for removing oxygen impurities from silicon waste from diamond wire cutting while simultaneously preparing high-purity binary silicides, characterized in that, The specific steps are as follows: (1) Diamond wire cutting silicon waste and pure metal materials X The mixture is thoroughly mixed to obtain a mixture, which is then heated by electromagnetic induction in an inert atmosphere until it is completely melted to obtain a binary silicide melt; the pure metal material X The constituent elements are Ni, Fe, Co, Mn, Ge, or Cr; the amount of Ni added accounts for 48.86~65.56 wt.% of the mass of the mixture, the amount of Fe added accounts for 47.70~75.24 wt.% of the mass of the mixture, the amount of Co added accounts for 48.98~79.33 wt.% of the mass of the mixture, the amount of Mn added accounts for 50.89~84.32 wt.% of the mass of the mixture, the amount of Ti added accounts for 43.80~60.92 wt.% of the mass of the mixture, and the amount of Cr added accounts for 45.85~62.87 wt.% of the mass of the mixture. (2) The binary silicide melt is kept at a constant temperature and subjected to electromagnetic deoxidation melting to separate oxygen, thereby obtaining a binary silicide. X -Si and oxygen-rich residue alloy ingots, binary silicides in alloy ingots X -Si and oxygen-rich residue were separated to obtain a high-purity binary silicide alloy; the binary silicide X -Si is a binary Ni-Si compound, a binary Fe-Si compound, a binary Co-Si compound, a binary Mn-Si compound, a binary Ti-Si compound, or a binary Cr-Si compound. The binary Ni-Si compound is one or both of NiSi2 and NiSi. The binary Fe-Si compound is one or more of FeSi2, FeSi, and Fe5Si3. The binary Co-Si compound is one or more of Co2Si, CoSi, and CoSi2. The binary Mn-Si compound is Mn... 11 Si 19 One or more of MnSi, Mn5Si3 and Mn3Si, the binary Ti-Si compounds are one or more of TiSi2 and TiSi, and the binary Cr-Si compounds are one or two of CrSi2 and CrSi; the electromagnetic deoxidation melting temperature is 1350~1700℃ and the time is 0.5~1.5h.

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