Wafer scratch diagnosis method, electronic device, and storage medium

Abstract

This application provides a wafer scratch diagnosis method, electronic device, and storage medium. The method includes: acquiring a target image of a wafer after chemical mechanical polishing; determining target trajectory information of a target scratch on the wafer from the target image; determining at least one trajectory segment corresponding to the target trajectory information from a pre-defined wafer polishing trajectory library, wherein the wafer polishing trajectory library is used to record trajectory data on the wafer when the polishing pad contacts the wafer during chemical mechanical polishing; and determining a diagnostic result of the target scratch formed on the wafer by the polishing pad based on the at least one trajectory segment.

Description

Technical Field

[0001] This application relates to the field of chemical mechanical polishing technology, and more particularly to a wafer scratch diagnosis method, electronic device, and storage medium. Background Technology

[0002] In chemical mechanical polishing (CMP), wafer surface scratches are a common defect. During CMP, the wafer is in direct contact with the polishing pad on the polishing disk; therefore, theoretically, scratches on the wafer surface are almost entirely caused by the direct or indirect action of the polishing pad. Currently, the diagnosis of wafer scratches mainly relies on the engineer's engineering experience or the engineer's step-by-step investigation of various related factors. However, this diagnostic method requires a high level of engineer experience and has a long turnaround time, incurring significant time costs. Therefore, a new technical solution is needed to improve this problem. Summary of the Invention

[0003] This application provides a wafer scratch diagnosis method, electronic device, and storage medium to at least partially solve the above-mentioned problems.

[0004] According to a first aspect of this application, a wafer scratch diagnosis method is provided, comprising: acquiring a target image including a wafer after chemical mechanical polishing; determining target trajectory information of a target scratch on the wafer from the target image; determining at least one trajectory segment corresponding to the target trajectory information from a pre-determined wafer polishing trajectory library based on the target trajectory information, wherein the wafer polishing trajectory library is used to record trajectory data on the wafer when a polishing pad contacts the wafer during chemical mechanical polishing; and determining a diagnostic result of the target scratch formed on the wafer by the polishing pad based on the at least one trajectory segment.

[0005] According to a second aspect of this application, an electronic device is provided, comprising: a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other via the communication bus; the memory is used to store a computer program; and the processor is used to execute the method of the first aspect by running the computer program stored in the memory.

[0006] According to a third aspect of this application, a computer storage medium is provided that stores a computer program thereon, which, when executed by a processor, implements the method described in the first aspect above.

[0007] According to a fourth aspect of this application, a computer program product is provided, comprising a computer program that, when executed by a processor, implements the method described in the first aspect above.

[0008] The wafer scratch diagnosis solution provided in this application can acquire a target image of the wafer after chemical mechanical polishing (CMP), determine the target trajectory information of the target scratch on the wafer from the target image, and then determine at least one trajectory segment corresponding to the target trajectory information from a pre-defined wafer polishing trajectory library. The wafer polishing trajectory library records the trajectory data on the wafer when the polishing pad contacts the wafer during CMP. Based on at least one trajectory segment, the diagnosis result of the target scratch formed on the wafer by the polishing pad is determined. Therefore, the technical solution in this application can conveniently and quickly realize wafer scratch diagnosis, reducing reliance on manual diagnosis, thus requiring less experience from engineers, reducing the solution cycle and time cost of wafer scratch diagnosis, and improving efficiency. Attached Figure Description

[0009] To more clearly illustrate the technical solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings.

[0010] Figure 1 This is a flowchart illustrating the steps of an exemplary wafer scratch diagnosis method in this application.

[0011] Figure 2 This is a schematic diagram of a wafer with scratches after chemical mechanical polishing, as described in this application.

[0012] Figure 3 This is an exemplary sub-step flowchart for step S104 in this application.

[0013] Figure 4 This is an exemplary sub-step flowchart for the step "determining the region on the polishing pad that forms the target scratch on the wafer based on at least one trajectory segment" in this application.

[0014] Figure 5 This is a diagram showing the trajectory of a trimmer on a polishing pad, as an example of the trimmer in this application.

[0015] Figure 6 This is a diagram showing the running trajectory of a retaining ring on a polishing pad, as an example of this application.

[0016] Figure 7 This is a structural block diagram of an exemplary electronic device according to this application.

[0017] Figure 8 This is a structural block diagram of an exemplary wafer scratch diagnostic device according to this application. Detailed Implementation

[0018] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art should fall within the scope of protection of this application. It should be understood that the various steps described in the method implementation of this disclosure can be performed in different orders and / or in parallel. In addition, the method implementation may include additional steps and / or omit the steps shown. The scope of this disclosure is not limited in this respect.

[0019] The term "comprising" and its variations as used herein are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Definitions of other terms will be given in the description below. It should be noted that the concepts of "first", "second", etc., mentioned in this application are used only to distinguish different devices, modules, or units, and are not intended to limit the order of functions performed by these devices, modules, or units or their interdependencies. It should be noted that the modifications "a" and "a plurality" mentioned in this application are illustrative rather than restrictive, and those skilled in the art should understand that, unless explicitly stated in the context, they should be understood as "one or more".

[0020] The specific implementation of this application will be further explained below with reference to the accompanying drawings.

[0021] According to a first aspect of this application, a method for diagnosing wafer scratches is provided. Figure 1 This is a flowchart illustrating the steps of an exemplary wafer scratch diagnosis method according to this application. (Refer to...) Figure 1 As shown, the wafer scratch diagnosis method includes steps S102, S104, S106, and S108, specifically:

[0022] S102: Acquire a target image including the wafer after chemical mechanical polishing.

[0023] First, an example of chemical mechanical polishing (CMP) will be described. Optionally, the CMP apparatus may include a polishing head, a polishing disc, and a dresser. Optionally, a polishing pad is disposed above the polishing disc. Optionally, the polishing head can pick up the wafer and transfer it onto the polishing disc, applying pressure towards the disc to press the wafer onto the polishing pad. The polishing disc can rotate, and the polishing head can drive the wafer to rotate relative to the disc. With the assistance of polishing solutions, the polishing pad can grind the contacted wafer surface for CMP polishing. Optionally, the polishing head includes a retaining ring. During CMP polishing, the retaining ring can maintain the wafer's position relative to the polishing head when it picks up the wafer. Optionally, the dresser is used to trim the polishing pad of the disc during CMP polishing.

[0024] During chemical mechanical polishing (CMP), since the wafer is in direct contact with the polishing pad, theoretically, scratches on the wafer surface are almost entirely caused by the polishing pad, either directly or indirectly. For example, after polishing multiple wafers, the resulting wafer slurry forms particulate polishing contaminants on the polishing pad of the polishing disk. During subsequent wafer polishing, these contaminants on the polishing pad may scratch the surface of the wafer being polished. Alternatively, the structure of the polishing pad itself may also cause wafer scratches. Furthermore, while the dresser and retainer rings generally do not directly contact the surface of the wafer being polished during CMP, in some cases, particles may fall from the dresser and retainer rings. These particles adhere to the polishing pad and may scratch the surface of the wafer being polished.

[0025] For example, refer to Figure 2 A schematic diagram of a wafer including scratches after chemical mechanical polishing (CMP) is shown. Optionally, after the wafer has undergone CMP polishing in a CMP apparatus, the polished surface of the wafer can be photographed using a camera to obtain a target image. It should be understood that the target image can be captured in real time, or it can be captured and stored in advance and retrieved directly when needed.

[0026] Optionally, the data obtained after the camera captures the wafer can be an analog signal. This analog data can be converted into digital image data through an A / D converter (Analog to Digital converter). The digital image data can then be filtered to reduce noise and obtain the target image.

[0027] S104: Determine the target trajectory information of the target scratch on the wafer from the target image.

[0028] The technical solution in this application is to perform scratch diagnosis on wafers with scratches. Therefore, the target image can be processed to determine the trajectory information of the target scratch on the wafer, i.e., the target trajectory information.

[0029] Optionally, refer to Figure 3 The flowchart shown includes the following sub-steps S1041 and S1042, specifically:

[0030] S1041: Determine the trajectory points of the target scratch from the target image, and determine the coordinates of each trajectory point of the target scratch.

[0031] Optionally, the target image can be processed to find each pixel corresponding to the target scratch in the target image, and each pixel can be used to determine the trajectory points of the target scratch. A coordinate system can be preset in the target image to assign trajectory point coordinates to each trajectory point. Optionally, the preset coordinate system can be the image coordinate system of the target image.

[0032] Optionally, when processing the target image, contour features can be extracted from the target scratch in the target image to determine the contour of the target scratch in the target image. The pixels within the contour are then identified as the individual pixels corresponding to the target scratch, thereby determining each trajectory point. Contour feature extraction can be implemented using any contour extraction algorithm.

[0033] S1042: Perform curve fitting based on the coordinates of each trajectory point to obtain the fitted trajectory curve of the target scratch, and determine the information of the fitted trajectory curve as the target trajectory information.

[0034] When performing curve fitting based on the coordinates of each trajectory point, any suitable curve fitting algorithm can be used to obtain the fitted curve of the target scratch, thereby determining the information of the fitted trajectory curve as the target trajectory information.

[0035] In this application, the target trajectory information of the target scratch on the wafer can be conveniently and quickly determined through the optional implementation of the above steps S1041 to S1042, thereby facilitating subsequent data processing.

[0036] S106: Based on the target trajectory information, determine at least one trajectory segment corresponding to the target trajectory information from a pre-determined wafer polishing trajectory library.

[0037] In this application, the wafer polishing trajectory library is used to record the trajectory data on the wafer when the polishing pad comes into contact with the wafer during the chemical mechanical polishing process.

[0038] Optionally, the trajectory data in the wafer polishing trajectory library can be pre-calculated based on the hardware structure of the chemical mechanical polishing (CMP) equipment and the process parameters during CMP. For example, during CMP, the polishing head can move and rotate the wafer on the polishing pad. Historical CMP data can be obtained, including the polishing pad rotation speed, polishing head rotation speed, parameters of the polishing head movement on the polishing pad (e.g., at least one of the following: movement speed, movement direction, and the radius position of the polishing head on the polishing pad), and the CMP polishing time. By combining this data, the coordinates of the trajectory points at each radius position of the polishing pad in contact with the wafer are calculated. The coordinates of these trajectory points are then fitted to obtain the trajectory on the wafer at each radius position in contact with the wafer. These obtained trajectories are then recorded as trajectory data in the wafer polishing trajectory library.

[0039] The implementation of step S106 is not limited in this application. Optionally, step S106 includes: determining the radius of curvature corresponding to each point on the fitted trajectory curve, and matching at least one trajectory segment that meets the preset radius of curvature condition from the wafer polishing trajectory library based on the radius of curvature corresponding to each point.

[0040] In this application, by fitting the radius of curvature of each point on the trajectory curve and the preset radius of curvature conditions, at least one suitable trajectory segment can be conveniently and effectively matched from the wafer polishing trajectory library, so as to facilitate data processing in subsequent steps.

[0041] The radius of curvature corresponding to each point on the fitted trajectory curve can be calculated using any suitable method, and this application does not limit this. Additionally, the radius of curvature of each trajectory point in the trajectory data stored in the wafer polishing trajectory library can be pre-calculated. Preset radius of curvature conditions can be set as needed. For example, a preset radius of curvature condition can be that the proportion of a certain trajectory segment corresponding to the radius of curvature of each trajectory point of the fitted trajectory curve reaches a predetermined proportion (this can be preset; for example, it can be set to 80%, 90%, 95%, 98%, etc.). If the predetermined proportion is reached, the preset radius of curvature condition is satisfied; if it is not reached, it is considered not to meet the preset radius of curvature condition. For example, assuming the fitted trajectory curve has 1000 trajectory points, and assuming the preset radius of curvature condition is a predetermined proportion of 90%, then more than 900 trajectory segments with the same radius of curvature as the fitted trajectory curve can be determined from the trajectory data to obtain one or more trajectory segments.

[0042] S108: Determine the diagnostic result of the target scratch formed on the wafer by the polishing pad based on at least one trajectory segment.

[0043] Based on the optional implementation of steps S102 to S108 above, since it is possible to acquire a target image of the wafer after chemical mechanical polishing, and then determine the target trajectory information of the target scratch on the wafer from the target image, at least one trajectory segment corresponding to the target trajectory information can be determined from a pre-determined wafer polishing trajectory library based on the target trajectory information. The wafer polishing trajectory library is used to record the trajectory data on the wafer when the polishing pad contacts the wafer during chemical mechanical polishing. Then, based on at least one trajectory segment, the diagnostic result of the target scratch formed on the wafer by the polishing pad is determined. Therefore, the technical solution in this application can conveniently and quickly realize wafer scratch diagnosis, reducing the reliance on manual diagnosis. Therefore, it requires less experience from engineers, thereby reducing the solution cycle and time cost of wafer scratch diagnosis and improving efficiency.

[0044] Optionally, step S108 includes: determining the region on the polishing pad that forms the target scratch on the wafer based on at least one trajectory segment. Based on this, the present application can quickly locate the location region on the polishing pad that forms the scratch on the wafer, facilitating wafer scratch diagnosis. This allows engineers to quickly locate and resolve related anomalies, reducing the solution cycle and time cost of wafer scratch diagnosis, improving efficiency, and reducing the workload for engineers.

[0045] Optionally, refer to Figure 4 The flowchart shown above, the step "determining the region on the polishing pad that forms the target scratch on the wafer based on at least one trajectory segment" includes sub-steps S1081 to S1084, specifically:

[0046] S1081: Determine the similarity between each trajectory segment in at least one trajectory segment and the fitted trajectory curve, and determine the trajectory segment with the highest similarity as the target trajectory segment.

[0047] The similarity between each trajectory segment and the fitted trajectory curve is determined, and the trajectory segment with the highest similarity is selected as the target trajectory segment. Any similarity algorithm can be used to determine this similarity. For example, the similarity can be determined by calculating at least one of the similarity metrics such as the mean squared error, Euclidean distance, or cosine similarity between the trajectory segment and the fitted trajectory curve. Other similarity metrics can also be used, chosen as needed. It should be understood that for various similarity metrics, a higher similarity metric generally indicates a higher similarity, while a lower similarity metric generally indicates a lower similarity.

[0048] S1082: Determine at least one radius region on the polishing pad that can form at least a portion of the target trajectory segment on the wafer.

[0049] Optionally, the polishing pad can be circular, and the radius regions on the polishing pad can include: a central circular region and multiple annular regions sequentially surrounding the central circular region. The radius range length of each radius region can be preset, and the lengths of any two regions can be the same or different. For example, taking a polishing pad with a radius of 380mm (15 inches) as an example, it can be divided into 12 radius regions: 0–30mm, 30–60mm, 60–90mm, 90–120mm, 120–150mm, 150–180mm, 180–210mm, 210–240mm, 240–270mm, 270–300mm, 300–330mm, and 330–380mm. Among these, the 0–30mm region is a circular region, and the latter 11 are annular regions. Of course, this is only an example for ease of understanding and is not intended to limit this application.

[0050] S1083: Based on the position information of the wafer on the polishing pad during chemical mechanical polishing, determine the positional matching degree between the target trajectory segment and the fitted trajectory curve formed on the wafer when the wafer is located at the position indicated by the position information.

[0051] During chemical mechanical polishing (CMP) of wafers, since the wafer can be positioned at different locations on the polishing pad, the target trajectory segment formed on the wafer by the same radius region may differ at different locations. This difference could be due to variations in the completeness of the target trajectory segment or its position on the wafer. Therefore, this application can determine the positional matching degree between the target trajectory segment formed on the wafer by each radius region and the fitted trajectory curve when the wafer is positioned at the location indicated by the position information on the polishing pad during CMP, based on the position information. Subsequent data processing can then be performed based on the positional matching degree. Optionally, the target trajectory segment formed on the wafer by each radius region can be determined from a wafer polishing trajectory library. The aforementioned positional matching degree can be determined in any way, for example, by calculating the overlap ratio between each point on the target trajectory segment formed on the wafer at the specified position and each point on the fitted trajectory curve. The higher the overlap ratio, the higher the positional matching degree. Alternatively, the position matching degree can be determined by calculating the pairwise distances between multiple points sampled from the target trajectory segment formed on the wafer at that position and multiple points sampled from the corresponding fitted trajectory curve (the x-coordinates of the multiple points sampled from the target trajectory segment and the multiple points sampled from the corresponding fitted trajectory curve are the same, or the y-coordinates are the same). The average value of the calculated distances is then used to determine the position matching degree. The smaller the average value, the higher the position matching degree.

[0052] S1084: The radius region with the highest positional matching degree is determined as the region where the polishing pad forms the target scratch on the wafer.

[0053] A higher positional matching degree indicates a more complete target trajectory segment formed by the wafer under that positional information, and a better consistency between the target trajectory segment and the target scratch on the wafer. By identifying the radius region with the highest positional matching degree as the area where the polishing pad forms the target scratch on the wafer, the accuracy of wafer scratch diagnosis can be better guaranteed.

[0054] Based on this, the optional implementation of the above sub-steps S1081 to S1084 in this application can effectively determine the area on the polishing pad that forms the target scratch on the wafer based on at least one trajectory segment. This can more accurately and quickly locate the location area on the polishing pad that forms the scratch on the wafer, realize wafer scratch diagnosis, and ensure the accuracy of the diagnosis. It is also easier for engineers to accurately and quickly locate related abnormal problems and solve them in a timely manner, reducing the solution cycle and time cost of wafer scratch diagnosis, improving efficiency, and also reducing the workload of engineers.

[0055] Optionally, the wafer scratch diagnosis method in this application further includes: determining the depth of the target scratch; in response to the depth being greater than a preset depth threshold, determining multiple radius positions from the radius region with the highest position matching degree; and determining, based on the multiple radius positions, running trajectory segments that simultaneously pass through the multiple radius positions from multiple running trajectory diagrams, wherein the multiple running trajectory diagrams are used to record the running trajectories of multiple polishing devices on the polishing pad; and determining, based on the determined multiple running trajectory segments, the target polishing device that caused the target scratch on the wafer from the multiple polishing devices.

[0056] As mentioned earlier, wafer scratches can be caused directly by the polishing pad. For example, after polishing multiple wafers, the resulting wafer slurry forms particulate polishing contaminants on the polishing pad of the polishing disk. During subsequent wafer polishing, these contaminants on the polishing pad may scratch the polished surface of the wafer. Alternatively, the structure of the polishing pad itself may also cause scratches. In this case, because the hardness of the polishing contaminants and the structure on the polishing pad is generally low, the scratch depth on the wafer is also low. As mentioned earlier, wafer scratches can also be caused indirectly by polishing devices (such as dressers, retaining rings, etc.) through the polishing pad. For example, particles fall from the surface of the dresser and retaining ring, adhering to the polishing pad, and potentially scratching the polished surface of the wafer through these particles. In this case, because the hardness of the particles falling from the polishing devices is generally high, the scratch depth on the wafer is also greater.

[0057] Therefore, this application can determine the depth of the target scratch. When the depth exceeds a preset depth threshold, it can, to some extent, reflect that the wafer scratch is caused by a polishing device passing through the polishing pad. Subsequently, it can be analyzed which polishing device caused the wafer scratch, thereby improving the effectiveness of wafer scratch diagnosis. The depth of the target scratch can be measured in advance in any manner.

[0058] Optionally, the first and last radius positions can be determined from the radius region with the highest positional matching degree. For example, taking the radius region of 210-240mm mentioned above as an example, its first and last radius positions are the positions on the circle with a radius of 210mm and the circle with a radius of 240mm, respectively. Then, multiple trajectory segments passing through the positions on the circle with a radius of 210mm and the circle with a radius of 240mm can be extracted from the multiple trajectory diagrams corresponding to multiple polishing devices. For example, refer to Figure 5 As shown, a diagram illustrating the trajectory of an example dresser on a polishing pad is presented. Figure 6 The diagram shows an example of the movement trajectory of a retaining ring on a polishing pad. It is evident that there is a significant difference in the movement trajectories of the dresser and the retaining ring, two polishing devices. Subsequently, based on the determined multiple movement trajectory segments, the target polishing device that will cause the target scratch on the wafer can be identified from among multiple polishing devices.

[0059] Optionally, when determining the target polishing device that causes the target scratch on the wafer from multiple polishing devices based on the determined multiple running trajectory segments, the formation time of multiple running trajectory segments can be determined separately, and the polishing device corresponding to the running trajectory segment with the shortest formation time can be determined as the target polishing device.

[0060] For example, Figure 5 and Figure 6 The diagram shows the movement trajectory of the dresser and retaining ring on the polishing pad. The dresser and retaining ring, as two polishing components, move to different positions on the polishing pad within the same operating time (this can be combined with...). Figure 5 and Figure 6 The trajectory of the dresser running for 1 second and the trajectory of the holding ring running for 1 second are shown in the figure.

[0061] Since the falling particles from the polishing device can be considered a transient event, the polishing device that traverses the radius region with the highest positional matching degree in the shortest time (i.e., the region where the polishing pad forms the target scratch on the wafer) is the most suspicious. In other words, the polishing device corresponding to the shortest running trajectory segment is the most suspicious. Identifying it as the target polishing device can effectively improve the accuracy of identifying the target polishing device.

[0062] Optionally, after completing the wafer scratch diagnosis in this application, guidance information for troubleshooting wafer scratch problems can be generated to facilitate engineers in troubleshooting and resolving problems and improve their work efficiency.

[0063] It is understood that the foregoing description of the wafer scratch diagnosis method is merely an illustrative example of this application and is not intended to limit this application in any way.

[0064] According to a second aspect of this application, an electronic device is provided. (Refer to...) Figure 7 As shown, the electronic device 700 includes: a processor 702, a communication interface 704, a memory 706, and a communication bus 708, wherein the processor 702, the communication interface 704, and the memory 706 communicate with each other through the communication bus 708; the memory 706 is used to store a computer program 710; the processor 702 is used to execute the wafer scratch diagnosis method described in the first aspect by running the computer program 710 stored in the memory 706.

[0065] According to a third aspect of this application, a computer storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the wafer scratch diagnosis method as described in the first aspect.

[0066] According to a fourth aspect of this application, a computer program product is provided, comprising a computer program that, when executed by a processor, implements the wafer scratch diagnosis method as described in the first aspect.

[0067] According to a fifth aspect of this application, a wafer scratch diagnostic device is provided. Figure 8 This diagram illustrates a structural block diagram of an exemplary wafer scratch diagnostic device 800 of this application. The wafer scratch diagnostic device 800 of this embodiment is used for chemical mechanical polishing of a wafer. The wafer includes a first film and a second film, with the first film covering the second film. (Refer to...) Figure 8 As shown, the wafer scratch diagnostic device 800 includes:

[0068] The acquisition module 802 is used to acquire target images, including those of the wafer after chemical mechanical polishing.

[0069] The first determining module 804 is used to determine the target trajectory information of the target scratch on the wafer from the target image;

[0070] The second determining module 806 is used to determine at least one trajectory segment corresponding to the target trajectory information from a pre-determined wafer polishing trajectory library according to the target trajectory information, wherein the wafer polishing trajectory library is used to record trajectory data on the wafer when the polishing pad contacts the wafer during the chemical mechanical polishing process.

[0071] The third determining module 808 is used to determine the diagnostic result of the target scratch formed on the wafer by the polishing pad based on the at least one trajectory segment.

[0072] The electronic device 700 / computer storage medium / computer program product / wafer scratch diagnosis device 800 embodiments in this application are all based on the same inventive concept as the wafer scratch diagnosis method provided in the first aspect above. They have been described in detail in the various optional embodiments of the aforementioned wafer scratch diagnosis method. Therefore, their related content and beneficial effects can be understood by referring to the above method embodiments, and will not be repeated here.

[0073] It should be noted that, depending on the implementation needs, the various components / steps described in this application can be broken down into more components / steps, or two or more components / steps or parts of the operation of a component / step can be combined into a new component / step to achieve the purpose of this application.

[0074] The methods described above according to this application can be implemented in hardware, firmware, or as software or computer code that can be stored in a recording medium (such as a CD-ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code originally stored on a remote recording medium or a non-transitory machine-readable medium and subsequently stored on a local recording medium, downloaded via a network. Thus, the methods described herein can be processed by software stored on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA). It is understood that the computer, processor, microprocessor controller, or programmable hardware includes storage components (e.g., RAM, ROM, flash memory, etc.) capable of storing or receiving software or computer code, which, when accessed and executed by the computer, processor, or hardware, implements the methods described herein. Furthermore, when a general-purpose computer accesses the code used to implement the methods shown herein, the execution of the code transforms the general-purpose computer into a dedicated computer for executing the methods shown herein.

[0075] Those skilled in the art will recognize that the units and method steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0076] The above embodiments are only used to illustrate this application and are not intended to limit this application. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of this application. Therefore, all equivalent technical solutions also fall within the scope of this application, and the patent protection scope of this application should be defined by the claims.

Claims

1. A method for diagnosing wafer scratches, comprising: Acquire target images, including those of wafers after chemical mechanical polishing; Determine the target trajectory information of the target scratch on the wafer from the target image; Based on the target trajectory information, at least one trajectory segment corresponding to the target trajectory information is determined from a pre-determined wafer polishing trajectory library, wherein the wafer polishing trajectory library is used to record trajectory data on the wafer when the polishing pad contacts the wafer during chemical mechanical polishing. Based on the at least one trajectory segment, determine the diagnostic result of the target scratch formed on the wafer by the polishing pad; The step of determining the target trajectory information of the target scratch on the wafer from the target image includes: Determine the trajectory points of the target scratch from the target image, and determine the coordinates of each trajectory point of the target scratch; Curve fitting is performed based on the coordinates of each trajectory point to obtain the fitted trajectory curve of the target scratch, and the information of the fitted trajectory curve is determined as the target trajectory information; The step of determining at least one trajectory segment corresponding to the target trajectory information from a pre-determined wafer polishing trajectory library based on the target trajectory information includes: Determine the radius of curvature corresponding to each point on the fitted trajectory curve, and match at least one trajectory segment that meets the preset radius of curvature condition from the wafer polishing trajectory library based on the radius of curvature corresponding to each point. The step of determining the diagnostic result of the target scratch formed on the wafer by the polishing pad based on the at least one trajectory segment includes: Based on the at least one trajectory segment, determine the region on the polishing pad that forms the target scratch on the wafer; Wherein, determining the region on the polishing pad that forms the target scratch on the wafer based on the at least one trajectory segment includes: Determine the similarity between each trajectory segment in the at least one trajectory segment and the fitted trajectory curve, and determine the trajectory segment with the highest similarity as the target trajectory segment; Identify at least one radius region on the polishing pad capable of forming at least a portion of the target trajectory segment on the wafer; Based on the position information of the wafer on the polishing pad during chemical mechanical polishing, the position matching degree between the target trajectory segment formed on the wafer and the fitted trajectory curve of each radius region in the at least one radius region when the wafer is located at the position indicated by the position information is determined; The radius region with the highest positional matching degree is determined as the region where the polishing pad forms the target scratch on the wafer.

2. The method of claim 1, wherein, The method further includes: The depth of the target scratch is determined. In response to the depth being greater than a preset depth threshold, multiple radius positions are determined from the radius region with the highest position matching degree. Based on the multiple radius positions, running trajectory segments that pass through the multiple radius positions are determined from multiple running trajectory diagrams. The multiple running trajectory diagrams are used to record the running trajectories of multiple polishing devices on the polishing pad. Based on the determined multiple running trajectory segments, the target polishing device that causes the target scratch on the wafer is identified from the multiple polishing devices.

3. The method of claim 2, wherein, The step of determining the target polishing device that causes the target scratch on the wafer from the plurality of polishing devices based on the determined plurality of running trajectory segments includes: The formation time of each of the multiple running trajectory segments is determined, and the polishing device corresponding to the running trajectory segment with the shortest formation time is determined as the target polishing device.

4. An electronic device comprising: The processor, the communication interface, the memory, and the communication bus are provided, wherein the processor, the communication interface, and the memory communicate with each other via the communication bus. The memory is used to store computer programs; The processor is configured to perform the method of any one of claims 1-3 by running the computer program stored in the memory.

5. A computer storage medium having a computer program stored thereon, which, when executed by a processor, implements the method as described in any one of claims 1-3.

6. A computer program product comprising a computer program that, when executed by a processor, implements the method as described in any one of claims 1-3.

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