Wafer pose adjustment method

Abstract

The application provides a wafer pose adjusting method, which comprises the following steps: adjusting the relative position of a transmitting end and a receiving end to make the included angle between an incident signal and a reflected signal β0; driving the transmitting end to move along a scale arc until the scale corresponding to the transmitting end is a preset standard value ∠1; adjusting the tilt state of a wafer end face until the intensity of the reflected signal obtained by the receiving end reaches the maximum; driving the wafer to rotate 180° around the positioning center line of a jig; driving the transmitting end to move along the scale arc and monitoring the intensity of the reflected signal obtained by the receiving end; when the intensity of the reflected signal reaches the maximum again, recording the scale ∠3 corresponding to the transmitting end; driving the transmitting end to move along the scale arc until the scale corresponding to the transmitting end is a calibration correction value ∠4, ∠4=(∠1+∠3) / 2; driving the wafer to rotate around the positioning center line and monitoring the intensity of the reflected signal obtained by the receiving end; when the intensity of the reflected signal reaches the maximum again, one wafer pose adjustment is completed.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device manufacturing technology, and in particular to a method for adjusting the position of a wafer. Background Technology

[0002] A wafer is an intermediate product formed after the growth and solidification of raw materials for crystal fabrication. After grinding, the wafer becomes a solid wafer. Before grinding, the wafer needs to be oriented to determine the desired grinding end face and grinding peripheral face. The grinding end face refers to the planar grinding surface obtained after grinding the wafer's end face, and the grinding peripheral face refers to the cylindrical grinding surface obtained after grinding the wafer's periphery. Wafers of specific materials have specific virtual planes as the grinding end face and specific virtual cylindrical surfaces as the grinding peripheral face. Determining the grinding end face is equivalent to determining the range of material to be removed during the grinding of the wafer's end face, and determining the grinding peripheral face is equivalent to determining the range of material to be removed during the grinding of the wafer's periphery.

[0003] Currently, wafers are typically oriented manually using crystal alignment instruments and fixtures. After orientation, the wafer and fixture are placed together in a fixed jig at the grinding station for grinding. However, crystal alignment instruments experience wear and tear over time, such as wear on the pressure orientation sensor and the guide rail assembly that allows the scale arc / transmitter / receiver to move up and down. This wear reduces the accuracy of the crystal alignment instrument, leading to inaccurate wafer orientation results. In other words, the determined grinding end face and grinding circumference are not accurate, ultimately resulting in wafers that fail to meet performance requirements, thus significantly increasing the defect rate and scrap rate. Summary of the Invention

[0004] In view of this, the present invention provides a wafer pose adjustment method that can offset and eliminate wafer orientation errors caused by wear and tear of the crystal orientation instrument.

[0005] The wafer orientation adjustment method provided by this invention is based on a crystal orientation analyzer and a fixture, and aims to make the wafer orientation suitable for grinding processes, including:

[0006] Adjust the relative positions of the transmitter and receiver to satisfy the angle between the incident signal and the reflected signal as β0;

[0007] With the receiver fixed relative to the transmitter, the transmitter moves along a scale arc until the scale corresponding to the transmitter reaches a preset standard value ∠1, where the preset standard value ∠1 includes β1, β2, and β3.

[0008] β1=13°49′, β2=17°49′, β3=16°47′;

[0009] Control the transmitter to emit incident signals toward the wafer;

[0010] Adjust the tilt of the wafer end face and monitor the intensity of the reflected signal obtained by the receiver until the intensity of the reflected signal reaches its maximum.

[0011] This causes the wafer to rotate 180° around the positioning center line of the fixture;

[0012] With the receiver fixed relative to the transmitter, the transmitter is moved along the scale arc, and the intensity of the reflected signal acquired by the receiver is monitored. When the intensity of the reflected signal reaches its maximum again, the scale ∠3 corresponding to the transmitter is recorded.

[0013] With the receiver fixed relative to the transmitter, the transmitter is moved along the scale arc until the scale corresponding to the transmitter is the calibration correction value ∠4, ∠4=(∠1+∠3) / 2;

[0014] The chip rotates around the positioning center line and monitors the intensity of the reflected signal obtained by the receiver. When the intensity of the reflected signal reaches its maximum again, the chip pose adjustment is completed.

[0015] The wafer pose adjustment method of the present invention can correct wafer pose errors, thereby determining a more accurate grinding surface. A more accurate grinding surface can make the wafer pose more in line with the pose requirements of the grinding process, thereby improving the yield and pass rate of wafer grinding.

[0016] In one embodiment, when the end face orientation of the wafer is adjusted to suit the wafer's orientation for end face grinding:

[0017] Perform all the above steps, and set the preset standard value ∠1 to β1, where β1 = 13°49′;

[0018] This causes the fixture and the wafer to rotate 90° around the positioning center line;

[0019] Repeat all the above steps, and set the preset standard value ∠1 to β2, β2=17°49′.

[0020] In one embodiment, when the end face orientation of the wafer is adjusted to make the wafer orientation suitable for end face grinding, the value of β0 is 180° - 2 × 17°49′ = 144°22′.

[0021] With this configuration, the wafer pose adjustment method of the present invention can achieve wafer end face orientation, thereby determining the grinding end face.

[0022] In one embodiment, when the peripheral orientation of the wafer is adjusted to make the wafer's orientation suitable for peripheral grinding, the preset standard value ∠1 is set to β3, where β3 = 16°47′.

[0023] In one embodiment, when the peripheral orientation of the wafer is adjusted to make the wafer's orientation suitable for peripheral grinding, β0 is taken as 180° - 2 × 16°47′ = 146°26′.

[0024] With this configuration, the wafer pose adjustment method of the present invention can achieve peripheral orientation of the wafer, thereby determining the grinding peripheral surface.

[0025] In one embodiment, the wafer pose adjustment method further includes

[0026] The scale arc and the axial positioning component move relative to the fixture along the positioning center line of the fixture so that the axial positioning component abuts against the end face of the wafer.

[0027] With this configuration, the center of the scale arc can fall on the end face of the wafer when the axial positioning component abuts against the end face of the wafer, which conforms to the wafer orientation operation specifications.

[0028] In one embodiment, the axial positioning element includes a pressure positioning sensor, which includes a pressure probe;

[0029] The process of moving the scale arc and the axial positioning component relative to the fixture along the positioning center line of the fixture, so that the axial positioning component abuts against the end face of the wafer, includes:

[0030] The scale arc and pressure positioning sensor move relative to the fixture along the positioning center line of the fixture so that the pressure probe comes into contact with the end face of the wafer.

[0031] With this setup, the center of the scale arc falls at the end of the pressure probe. The pressure positioning sensor can immediately generate a pressure signal the moment the pressure probe contacts the end face of the wafer. Therefore, the pressure positioning sensor can more accurately determine whether the center of the scale arc falls on the end face of the wafer.

[0032] In one embodiment, controlling the transmitter to emit an incident signal toward the wafer includes:

[0033] With the axial positioning component abutting the end face of the wafer, the control transmitter emits an incident signal toward the wafer.

[0034] In one embodiment, controlling the transmitter to emit an incident signal toward the wafer includes:

[0035] With the wafer end face perpendicular to the positioning center line, control the transmitter to emit an incident signal toward the wafer end face;

[0036] Adjusting the tilt of the wafer end face and monitoring the intensity of the reflected signal acquired by the receiver until the intensity of the reflected signal reaches its maximum includes:

[0037] Starting from the positioning center line perpendicular to the end face of the wafer, until the receiving end obtains the reflected signal with the maximum intensity, determine the angle ∠2 through which the wafer has rotated;

[0038] If ∠1, ∠2, ∠3, and ∠4 satisfy the test formula (1) ∠1=∠4+∠2, ∠3=∠4-∠2, then it is determined that the axial positioning component has a material reduction failure.

[0039] If ∠1, ∠2, ∠3, and ∠4 satisfy the test formula (2) ∠4=∠1+∠2, ∠3=∠4+∠2, then the axial positioning component is determined to have additive failure.

[0040] This setup allows for further identification of the causes of crystal orientation instrument wear and tear, enabling targeted repair, replacement, and maintenance of faulty components.

[0041] In one embodiment, the wafer pose adjustment method further includes:

[0042] Adjust the relative positions of the crystal orientation instrument and the fixture so that the center line of symmetry of the scale arc coincides with the positioning center line of the fixture.

[0043] With this setup, as the jig rotates synchronously around the positioning center line, the position of the incident signal reaching the end face of the wafer will not change, which conforms to the wafer orientation operation specifications. Attached Figure Description

[0044] Figure 1 A partial structural diagram of the crystal orientation instrument used in performing the wafer pose adjustment method;

[0045] Figure 2 A partial structural diagram of the crystal orientation instrument used in performing the wafer pose adjustment method;

[0046] Figure 3 First analytical diagram of the signal path when executing the chip pose adjustment method;

[0047] Figure 4 This is a second analytical diagram of the signal path when executing the chip pose adjustment method;

[0048] Figure 5 The third analytical diagram of the signal path when executing the chip pose adjustment method;

[0049] Figure 6 The fourth analytical diagram shows the signal path when executing the chip pose adjustment method.

[0050] Explanation of reference numerals in the attached diagram: 100, crystal orientation instrument; 10, guide rail assembly; 20, scale arc; 30, transmitter; 40, receiver; 50, axial positioning component; 51, pressure probe;

[0051] 200. Fixture; 60. Base; 70. Turntable; 80. Indexing plate; 90. Support assembly; 91. Support plate; 92. Support screw; 300. Wafer. Detailed Implementation

[0052] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "or / and" as used herein includes any and all combinations of one or more of the associated listed items.

[0054] The present invention provides a wafer pose adjustment method that can determine the grinding end face and the grinding peripheral face. The wafer 300 involved in the method is a silicon carbide wafer 300. The method is based on a crystal orientation instrument 100 and a fixture 200.

[0055] The grinding end face refers to the planar grinding surface obtained after grinding the end face of the wafer 300, and the grinding peripheral face refers to the cylindrical grinding surface obtained after grinding the peripheral side of the wafer 300. The process of determining the grinding end face is the end face orientation of the wafer 300, and the process of determining the grinding peripheral face is the peripheral side orientation of the wafer 300.

[0056] See Figures 1-2 First, let’s introduce the composition and structure of the crystal orientation instrument 100.

[0057] The crystal orientation analyzer 100 includes a guide rail assembly 10, a scale arc 20, a transmitter 30, a receiver 40, and an axial positioning element 50. The scale arc 20 is slidably connected to the guide rail assembly 10 and can move relative to the guide rail assembly 10 along a straight trajectory defined by the guide rail assembly 10. The scale arc 20 is an arc-shaped slide rail structure. Both the transmitter 30 and the receiver 40 are slidably connected to the scale arc 20 and can move relative to the scale arc 20 along an arc trajectory defined by the scale arc 20. The transmitter 30 and the receiver 40 are independent of each other and can move relative to each other along the scale arc 20. As the scale arc 20 moves relative to the guide rail assembly 10, the transmitter 30 and the receiver 40 can move synchronously relative to the guide rail assembly 10 following the scale arc 20. The transmitter 30 is used to transmit signals to the wafer 300. The receiving end 40 is used to receive the signal reflected by the wafer 300. The signal emitted by the transmitting end 30 to the wafer 300 is called the incident signal, and the signal received by the receiving end 40 is called the reflected signal. The axial positioning member 50 is connected to the scale arc 20. The center of the scale arc 20 is located at the end of the axial positioning member 50. The axial positioning member 50 is used to abut against the end face of the wafer 300 when the wafer 300 is oriented, so that the center of the scale arc 20 falls on the end face of the wafer 300. The axial positioning member 50 can move linearly synchronously with the guide rail assembly 10 as the scale arc 20 moves along the guide rail assembly 10. The center line of symmetry of the scale arc 20 passes through the center of the scale arc 20 and bisects the scale arc 20. The straight trajectory defined by the guide rail assembly 10 is parallel to the center line of symmetry of the scale arc 20.

[0058] Next, we will introduce the composition and structure of jig 200.

[0059] See Figures 1-2 The fixture 200 includes a base 60, an indexing plate 80, a turntable 70, and a support assembly 90, all coaxially arranged and stacked sequentially. The indexing plate 80 is fixed relative to the base 60. The turntable 70 can rotate relative to the base 60 around its axis. As the turntable 70 rotates relative to the base 60, the angle indicated on the indexing plate 80 changes. The support assembly 90 includes a support plate 91 and a support screw 92. The support plate 91 is stacked on the end of the turntable 70 facing away from the base 60. The support screw 92 connects the support plate 91 and the turntable 70. When the turntable 70 rotates relative to the base 60 around its axis, it can drive the support assembly 90 to rotate around the axis of the turntable 70. The support screw 92 can be rotated to change the pitch state of the support plate 91, thereby changing the angle between the support plate 91 and the turntable 70, and changing the tilt orientation of the support plate 91 relative to the turntable 70. For ease of explanation, the axis between the base 60 and the indexing plate 80 will be referred to as the positioning center line. When positioning the wafer 300 using the crystal orientation instrument 100 and the fixture 200, the positioning center line coincides with the symmetrical center line of the scale arc 20.

[0060] The wafer pose adjustment method of the present invention is described below, the method comprising:

[0061] S00. Adjust the relative positions of the transmitter 30 and the receiver 40 to satisfy the angle between the incident signal and the reflected signal as β0.

[0062] S11. Adjust the relative positions of the crystal orientation instrument 100 and the fixture 200 so that the center line of symmetry of the scale arc 20 coincides with the center line of positioning of the fixture 200.

[0063] S12. Drive the scale arc 20 and the axial positioning member 50 to move relative to the fixture 200 along the positioning center line of the fixture 200 so that the axial positioning member 50 abuts against the end face of the wafer 300.

[0064] S20. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the preset standard value ∠1, wherein the preset standard value ∠1 includes β1, β2 and β3, β1 = 13°49′, β2 = 17°49′, β3 = 16°47′;

[0065] S30, controls the transmitter 30 to emit an incident signal to the chip 300;

[0066] S40. Adjust the tilt state of the end face of the chip 300 and monitor the intensity of the reflected signal acquired by the receiver 40 until the intensity of the reflected signal reaches its maximum.

[0067] S50, drives the chip 300 to rotate 180° around the positioning center line of the fixture 200;

[0068] S60. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20, and the intensity of the reflected signal acquired by the receiver 40 is monitored. When the intensity of the reflected signal reaches its maximum again, the scale ∠3 corresponding to the transmitter 30 is recorded.

[0069] S70. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the calibration correction value ∠4, ∠4=(∠1+∠3) / 2;

[0070] S80 drives the chip 300 to rotate around the positioning center line and monitors the intensity of the reflected signal acquired by the receiver 40. When the intensity of the reflected signal reaches its maximum again, the chip 300's pose adjustment is completed.

[0071] Step S00 is completed by causing the transmitter 30 and receiver 40 to slide relative to the scale arc 20 along the arc trajectory defined by the scale arc 20. When the transmitter 30 reaches the scale value ∠ indicated on the scale arc 20... 发射 The scale value ∠ indicated by the receiving end 40 on the scale arc 20 接收When the phase difference is β0, step S00 is completed.

[0072] Step S12 is completed by moving the scale arc 20 relative to the guide rail assembly 10 along the straight trajectory defined by the guide rail assembly 10. The straight trajectory defined by the guide rail assembly 10 is parallel to the positioning center line. When the axial positioning member 50 abuts against the center of the end face of the wafer 300, the symmetrical center line of the scale arc 20 coincides with the positioning center line of the fixture 200. Both steps S11 and S12 are completed.

[0073] Step S20 is performed after step S00 is completed. During the execution of step S20, the transmitter 30 indicates the scale ∠ on the scale arc 20. 发射 The scale ∠ indicated by the receiving end 40 on the scale arc 20 接收 Both change, but the difference between the two (∠) 接收 -∠ 发射 Keep β0. The selectable values ​​for the preset standard value ∠1 include β1, β2, and β3, where β1 = 13°49′, β2 = 17°49′, and β3 = 16°47′. Specifically, when adjusting the peripheral pose of the wafer to suit peripheral grinding, the preset standard value ∠1 is set to β3, where β3 = 16°47′.

[0074] Furthermore, when the peripheral orientation of the wafer 300 is adjusted to make the orientation of the wafer 300 suitable for peripheral grinding, the value of β0 is 180°-2×β3=146°26′.

[0075] Thus, the wafer pose adjustment method of the present invention can achieve peripheral orientation of the wafer 300, thereby determining the grinding peripheral surface.

[0076] During the execution of steps S30 and S40, the incident signal is reflected by the (0001) or (000-1) crystal plane of the crystal lattice, thereby forming a reflected signal. When all or most of the reflected signal is acquired by the receiving end 40, the intensity of the reflected signal acquired by the receiving end 40 is relatively large; when a small amount of the reflected signal is acquired or not acquired by the receiving end 40, the intensity of the reflected signal acquired by the receiving end 40 is relatively weak.

[0077] Step S40 is completed by rotating the support screw 92 relative to the turntable 70. As the support screw 92 rotates relative to the turntable 70, the support screw 92 and the support disk 91 move in a spiral motion. The tilt angle and tilt direction of the support disk 91 relative to the turntable 70 change. The wafer 300 is fixedly connected to the support disk 91. Therefore, the wafer 300 can follow the movement of the support disk 91 relative to the turntable 70, thereby changing the tilt angle and tilt direction of the wafer 300 end face. The transmission path of the reflected signal changes with the movement of the wafer 300 end face.

[0078] Step S50 is executed after step S40. When the end face of the wafer 300 reaches a certain tilt angle and tilt direction, the intensity of the reflected signal obtained by the receiver 40 is the greatest. At this time, the support screw 92 is fixed to fix the position of the support disk 91 and the wafer 300 relative to the turntable 70. Then, the turntable 70 is driven to rotate 180° relative to the base 60 around the positioning center line so that the turntable 70, the support disk 91 and the crystal rotate 180° around the positioning center line as a whole.

[0079] Step S60 is completed by rotating the support screw 92 relative to the turntable 70. The tilt angle and tilt direction of the support disk 91 relative to the turntable 70 change as the support screw 92 rotates, and the wafer 300 is fixedly connected to the support disk 91. During step S60, the graduation ∠ indicated by the transmitter 30 on the graduation arc 20... 发射 The scale ∠ indicated by the receiving end 40 on the scale arc 20 接收 All remain unchanged. When the end face of wafer 300 is oriented using a wafer pose adjustment method, ∠ 接收 -∠ 发射 The difference is 144°22′; when the wafer 300 is oriented peripherally using the wafer pose adjustment method, ∠ 接收 -∠ 发射 The difference is 146°26′.

[0080] When step S70 is executed, the transmitter 30 indicates the scale ∠ on the scale arc 20. 发射 The scale ∠ indicated by the receiving end 40 on the scale arc 20 接收 All remain unchanged. That is, when the end face of the wafer 300 is oriented using the wafer pose adjustment method, ∠ 接收 -∠ 发射 The difference is 144°22′; when the wafer 300 is oriented peripherally using the wafer pose adjustment method, ∠ 接收 -∠ 发射 The difference is 146°26′. ∠4 is the average of ∠1 and ∠3, and they have an identity relationship: ∠4=(∠1+∠3) / 2.

[0081] When performing step S80, the turntable 70 is rotated relative to the base 60 around the positioning center line. The turntable 70, the support disk 91, and the crystal rotate as a whole around the positioning center line. While the turntable 70 is rotating relative to the base 60 around the positioning center line, the intensity of the reflected signal acquired by the receiver 40 is monitored in real time. When the intensity of the reflected signal reaches its maximum, the turntable 70 is stopped.

[0082] The possible values ​​for the calibration correction value ∠4 include Ω1, Ω2, and Ω3, where Ω1 = (β1 + ∠3) / 2; Ω2 = (β2 + ∠3) / 2; and Ω3 = (β3 + ∠3) / 2. When the wafer 300 is oriented peripherally using the wafer pose adjustment method, the value of β0 is 180° - 2 × β3 = 146°26′, and the value of the calibration correction value ∠4 is Ω3. Therefore, the method for oriented peripherally of the wafer 300 is as follows:

[0083] S00. Adjust the relative positions of the transmitter 30 and the receiver 40 to satisfy the angle between the incident signal and the reflected signal as β0, β0=146°26′;

[0084] S11. Adjust the relative positions of the crystal orientation instrument 100 and the fixture 200 so that the center line of symmetry of the scale arc 20 coincides with the center line of positioning of the fixture 200.

[0085] S12. Drive the scale arc 20 and the axial positioning member 50 to move relative to the fixture 200 along the positioning center line of the fixture 200 so that the axial positioning member 50 abuts against the end face of the wafer 300.

[0086] S20. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the preset standard value ∠1, ∠1=β3=16°47′;

[0087] S30, controls the transmitter 30 to emit an incident signal to the chip 300;

[0088] S40. Adjust the tilt state of the end face of the chip 300 and monitor the intensity of the reflected signal acquired by the receiver 40 until the intensity of the reflected signal reaches its maximum.

[0089] S50, drives the chip 300 to rotate 180° around the positioning center line of the fixture 200;

[0090] S60. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20, and the intensity of the reflected signal acquired by the receiver 40 is monitored. When the intensity of the reflected signal reaches its maximum again, the scale ∠3 corresponding to the transmitter 30 is recorded.

[0091] S70. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the calibration correction value ∠4, ∠4=(∠1+∠3) / 2=(β3+∠3) / 2;

[0092] S80 drives the chip 300 to rotate around the positioning center line and monitors the intensity of the reflected signal acquired by the receiver 40. When the intensity of the reflected signal reaches its maximum again, the circumferential orientation of the chip 300 is completed.

[0093] The wafer pose adjustment method of the present invention can also orient the end face of the wafer 300, thereby determining the grinding end face. When the end pose of the wafer 300 is adjusted to make the posture of the wafer 300 suitable for end face grinding, the wafer pose adjustment method is used to orient the end face of the wafer 300, then the value of β0 is 180°-2×17°49′=144°22′, that is, β0=180°-2×β2;

[0094] The wafer pose adjustment method includes the following three stages:

[0095] In the first stage, execute the above steps S00 to S80, and set the preset standard value ∠1 to β1, where β1 = 13°49′.

[0096] In the second stage, after completing steps S00 to S80 once, the jig 200 and the chip 300 are rotated 90° around the positioning center line.

[0097] In the third stage, the above steps S00 to S80 are executed again, and the preset standard value ∠1 is set to β2, β2 = 17°49′.

[0098] Therefore, the method for peripheral orientation of wafer 300 is as follows:

[0099] S00. Adjust the relative positions of the transmitter 30 and the receiver 40 to satisfy the angle between the incident signal and the reflected signal as β0, β0=144°22′;

[0100] S11. Adjust the relative positions of the crystal orientation instrument 100 and the fixture 200 so that the center line of symmetry of the scale arc 20 coincides with the center line of positioning of the fixture 200.

[0101] S12. Drive the scale arc 20 and the axial positioning member 50 to move relative to the fixture 200 along the positioning center line of the fixture 200 so that the axial positioning member 50 abuts against the end face of the wafer 300.

[0102] S20. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the preset standard value ∠1, ∠1=β1=13°49′;

[0103] S30, controls the transmitter 30 to emit an incident signal to the chip 300;

[0104] S40. Adjust the tilt state of the end face of the chip 300 and monitor the intensity of the reflected signal acquired by the receiver 40 until the intensity of the reflected signal reaches its maximum.

[0105] S50, drives the chip 300 to rotate 180° around the positioning center line of the fixture 200;

[0106] S60. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20, and the intensity of the reflected signal acquired by the receiver 40 is monitored. When the intensity of the reflected signal reaches its maximum again, the scale ∠3 corresponding to the transmitter 30 is recorded.

[0107] S70. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the calibration correction value ∠4, ∠4=(∠1+∠3) / 2=(β1+∠3) / 2;

[0108] S80 drives the chip 300 to rotate around the positioning center line and monitors the intensity of the reflected signal acquired by the receiver 40. When the intensity of the reflected signal reaches its maximum again, the chip 300's pose adjustment is completed.

[0109] S90, drives the fixture 200 and the chip 300 to rotate 90° around the positioning center line;

[0110] S00. Adjust the relative positions of the transmitter 30 and the receiver 40 to satisfy the angle between the incident signal and the reflected signal as β0, β0=144°22′;

[0111] S11. Adjust the relative positions of the crystal orientation instrument 100 and the fixture 200 so that the center line of symmetry of the scale arc 20 coincides with the center line of positioning of the fixture 200.

[0112] S12. Drive the scale arc 20 and the axial positioning member 50 to move relative to the fixture 200 along the positioning center line of the fixture 200 so that the axial positioning member 50 abuts against the end face of the wafer 300.

[0113] S20. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the preset standard value ∠1, ∠1=β2=17°49′;

[0114] S30, controls the transmitter 30 to emit an incident signal to the chip 300;

[0115] S40. Adjust the tilt state of the end face of the chip 300 and monitor the intensity of the reflected signal acquired by the receiver 40 until the intensity of the reflected signal reaches its maximum.

[0116] S50, drives the chip 300 to rotate 180° around the positioning center line of the fixture 200;

[0117] S60. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20, and the intensity of the reflected signal acquired by the receiver 40 is monitored. When the intensity of the reflected signal reaches its maximum again, the scale ∠3 corresponding to the transmitter 30 is recorded.

[0118] S70. With the receiver 40 fixed relative to the transmitter 30, the transmitter 30 is moved along the scale arc 20 until the scale corresponding to the transmitter 30 is the calibration correction value ∠4, ∠4=(∠1+∠3) / 2=(β2+∠3) / 2;

[0119] S80 drives the chip 300 to rotate around the positioning center line and monitors the intensity of the reflected signal acquired by the receiver 40. When the intensity of the reflected signal reaches its maximum again, the chip 300's pose adjustment is completed once more.

[0120] In some embodiments, the axial positioning member 50 is a pressure positioning sensor, which includes a pressure probe 51 for abutting against the end face of the wafer 300, with the center of the scale arc 20 located at the end of the pressure probe 51. Step S12, moving the scale arc 20 and the axial positioning member 50 relative to the fixture 200 along the positioning center line of the fixture 200 so that the axial positioning member 50 abuts against the end face of the wafer 300, includes:

[0121] S121, drive the scale arc 20 and the pressure positioning sensor to move relative to the fixture 200 along the positioning center line of the fixture 200 so that the pressure probe 51 abuts against the end face of the chip 300.

[0122] Step S30, controlling the transmitter 30 to emit an incident signal to the wafer 300, includes:

[0123] S31. With the axial positioning member 50 abutting against the end face of the wafer 300, the transmitter 30 is controlled to emit an incident signal to the wafer 300.

[0124] Specifically, in step S31, the pressure probe 51 is pressed against the end face of the chip 300, that is, when the pressure probe 51 is pressed against the end face of the chip 300, the transmitter 30 is controlled to emit an incident signal to the chip 300.

[0125] In some embodiments, step S30, controlling the transmitting end 30 to emit an incident signal to the wafer 300, includes:

[0126] S32. With the end face of the wafer 300 perpendicular to the positioning center line, control the transmitter 30 to emit an incident signal toward the end face of the wafer 300.

[0127] Step S40, adjusting the tilt state of the end face of the wafer 300 and monitoring the intensity of the reflected signal acquired by the receiver 40 until the intensity of the reflected signal reaches its maximum, includes:

[0128] S41. Starting from the positioning center line perpendicular to the end face of the chip 300, and ending at the receiving end 40 where the reflected signal with the maximum intensity is obtained, determine the angle ∠2 through which the chip 300 has rotated.

[0129] S42. If ∠1, ∠2, ∠3, and ∠4 satisfy the test formula (1) ∠1=∠4+∠2, ∠3=∠4-∠2, then it is determined that the axial positioning component 50 has a material reduction failure.

[0130] If ∠1, ∠2, ∠3, and ∠4 satisfy the test formula (2) ∠4=∠1+∠2, ∠3=∠4+∠2, then the axial positioning component 50 is determined to have an additive failure.

[0131] Taking the axial positioning component 50 as a pressure positioning sensor as an example, the subtractive failure of the axial positioning component 50 includes failure caused by wear at the end of the pressure probe 51. Figures 3-4 The black straight line segment represents the ideal lattice boundary when the end of the pressure probe 51 is not worn, that is, the ideal (0001) crystal plane or the ideal (000-1) crystal plane when the end of the pressure probe 51 is not worn. The red solid straight line segment represents the actual lattice boundary when the end of the pressure probe 51 is worn.

[0132] It is easy to understand that when the end of the pressure probe 51 is not worn, the position of the end of the pressure probe 51 is exactly the center of the scale arc 20. At this time, the center of the scale arc 20 is approximately located on the end face of the wafer 300. When the end of the pressure probe 51 is worn and comes into contact with the end face of the wafer 300, the center of the scale arc 20 will be lower than the end face of the wafer 300, that is, located inside the wafer 300.

[0133] Taking the axial positioning component 50 as an example of a pressure positioning sensor, the additive manufacturing failure of the axial positioning component 50 includes failure caused by dirt adhering to the end of the pressure probe 51. Figures 5-6 The black straight line segment represents the ideal lattice boundary when there is no dirt adhering to the end of the pressure probe 51, that is, the ideal (0001) crystal plane or the ideal (000-1) crystal plane when there is no dirt adhering to the end of the pressure probe 51. The red solid straight line segment represents the actual lattice boundary when there is dirt adhering to the end of the pressure probe 51.

[0134] It is easy to understand that when there is no dirt on the end of the pressure probe 51, the position of the end of the pressure probe 51 is exactly the center of the scale arc 20. At this time, the center of the scale arc 20 is approximately located on the end face of the wafer 300. When there is dirt on the end of the pressure probe 51 and it comes into contact with the end face of the wafer 300, the center of the scale arc 20 will be higher than the end face of the wafer 300, that is, located outside the wafer 300.

[0135] Figure 3 The black broken-line arrows in the middle indicate the ideal transmission paths of the incident signal and the ideal transmission paths of the reflected signal when the end of the pressure probe 51 is unworn. Figures 3-4 The red arrows in the middle indicate the actual transmission paths of the incident signal and the reflected signal. Figure 3 The red dashed line segment represents the lattice boundary after step S40. Figure 3 In the state shown, the intensity of the reflected signal received by receiver 40 reaches its maximum; after step S50 is completed, the lattice boundary is as follows: Figure 4 As shown by the red dashed line segment. Combined with... Figure 3 and Figure 4 For the case of material reduction failure of axial positioning component 50, the following angular relationships exist: ∠1=∠4+∠2,∠3=∠4-∠2。

[0136] It should be added that, although ∠3 is in Figure 4 The angle between the incident signal and the ideal lattice boundary is represented by ∠3. However, during crystal orientation, the guide rail assembly and the positioning center line extend vertically, and the ideal lattice boundary and the horizontal plane are approximately parallel. Therefore, it can be considered that the scale ∠3 indicated by the transmitter 30 on the scale arc 20 is approximately equal to the angle between the incident signal and the ideal lattice boundary.

[0137] Figure 5 The black broken line represents the ideal transmission path of the incident signal and the ideal transmission path of the reflected signal when there is no dirt adhering to the end of the pressure probe 51. Figures 5-6 The red arrows in the middle indicate the actual transmission paths of the incident signal and the reflected signal. Figure 5 The red dashed line segment represents the lattice boundary after step S40. Figure 5 In the state shown, the intensity of the reflected signal received by receiver 40 reaches its maximum; after step S50 is completed, the lattice boundary is as follows: Figure 6 As shown by the red dashed line segment, in the case of additive manufacturing failure of the axial positioning component 50, combined with... Figure 5 and Figure 6 The following angular relationships exist: ∠4=∠1+∠2,∠3=∠4+∠2.

[0138] It should be added that, although Figure 6 The ∠3 shown is equal to the angle between the incident signal and the ideal lattice boundary. However, during the crystal orientation process, the guide rail assembly and the positioning center line extend in the vertical direction, and the ideal lattice boundary and the horizontal plane are approximately parallel. Therefore, it can be considered that the scale ∠3 indicated by the transmitter 30 on the scale arc 20 is approximately equal to the angle between the incident signal and the ideal lattice boundary.

[0139] It can be seen that regardless of whether the axial positioning component 50 experiences additive or subtractive wear, the following identity relationship always holds, namely ∠4=(∠1+∠3) / 2.

[0140] After determining the failure type of the axial positioning component 50 according to step S42, the axial positioning component 50 can be repaired, replaced, or updated in a targeted manner. For example, if it is determined that the pressure positioning sensor is a subtractive failure, the pressure probe 51 can be replaced, or the original pressure positioning sensor can be replaced with a new pressure positioning sensor; if it is determined that the pressure positioning sensor is an additive failure, the end of the pressure probe 51 can be cleaned and decontaminated, or the original pressure positioning sensor can be replaced with a new pressure positioning sensor.

[0141] It is worth noting that the wafer pose adjustment method of the present invention can not only offset the wafer pose error caused by the failure of the axial positioning component 50, but also offset the wafer pose error caused by the wear of the guide rail assembly 10. In other words, even if the guide rail assembly 10 is worn, causing the accuracy of the scale arc 20 to move linearly along the guide rail assembly 10 to decrease, the wafer pose adjustment method of the present invention can still offset the error in the orientation of the wafer 300.

[0142] In summary, the wafer orientation adjustment method of the present invention can correct a series of orientation errors of the wafer 300 caused by wear of the axial positioning component 50, shape and position errors of the guide rail assembly 10, and other factors caused by wear of the crystal orientation instrument 100 and assembly errors. This allows for the determination of a more accurate grinding end face and grinding peripheral face. The more accurate grinding end face and grinding peripheral face can make the orientation of the wafer 300 more in line with the orientation requirements of the grinding process, thereby improving the yield and pass rate of the wafer 300 after grinding.

[0143] The technical features of the above-described embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0144] Those skilled in the art should recognize that the above embodiments are merely illustrative of the present invention and are not intended to limit the present invention. Any appropriate changes and variations made to the above embodiments within the essential spirit of the present invention fall within the scope of protection claimed by the present invention.

Claims

1. A wafer orientation adjustment method, the method being based on a crystal orientation instrument (100) and a fixture (200), aimed at making the orientation of a wafer (300) suitable for grinding processing, characterized in that, The method includes: Adjust the relative positions of the transmitter (30) and receiver (40) to satisfy the angle between the incident signal and the reflected signal as β0; With the receiver (40) fixed relative to the transmitter (30), the transmitter (30) is moved along the scale arc (20) until the scale corresponding to the transmitter (30) is the preset standard value ∠1, wherein the preset standard value ∠1 includes β1, β2 and β3, β1 = 13°49′, β2 = 17°49′, β3 = 16°47′; Control the transmitter (30) to emit an incident signal to the chip (300); Adjust the tilt state of the end face of the chip (300) and monitor the intensity of the reflected signal obtained by the receiver (40) until the intensity of the reflected signal reaches the maximum. The wafer (300) is rotated 180° around the positioning center line of the fixture (200); With the receiver (40) fixed relative to the transmitter (30), the transmitter (30) is moved along the scale arc (20), and the intensity of the reflected signal acquired by the receiver (40) is monitored. When the intensity of the reflected signal reaches its maximum again, the scale ∠3 corresponding to the transmitter (30) is recorded. With the receiver (40) fixed relative to the transmitter (30), the transmitter (30) is moved along the scale arc (20) until the scale corresponding to the transmitter (30) is the calibration correction value ∠4, ∠4=(∠1+∠3) / 2; The chip (300) is rotated around the positioning center line and the intensity of the reflected signal acquired by the receiver (40) is monitored. When the intensity of the reflected signal reaches its maximum again, the chip (300) pose adjustment is completed.

2. The wafer pose adjustment method according to claim 1, characterized in that, When the peripheral orientation of the wafer (300) is adjusted to make the orientation of the wafer (300) suitable for peripheral grinding, the preset standard value ∠1 is set to β3, β3=16°47′.

3. The wafer pose adjustment method according to claim 2, characterized in that, The value of β0 is 180° - 2 × 16°47′ = 146°26′.

4. The wafer pose adjustment method according to claim 1, characterized in that, When adjusting the end face orientation of the wafer (300) to make the wafer (300) suitable for end face grinding: Perform all the steps of the wafer pose adjustment method as described in claim 1, and set the preset standard value ∠1 to β1, where β1 = 13°49′; The jig (200) and the wafer (300) are rotated 90° around the positioning center line; Repeat all the steps of the wafer pose adjustment method as described in claim 1, and set the preset standard value ∠1 to β2, β2=17°49′.

5. The wafer pose adjustment method according to claim 4, characterized in that, The value of β0 is 180° - 2 × 17°49′ = 144°22′.

6. The wafer pose adjustment method according to claim 1, characterized in that, Also includes: The scale arc (20) and the axial positioning member (50) are moved relative to the positioning center line of the fixture (200) so that the axial positioning member (50) abuts against the end face of the wafer (300).

7. The wafer pose adjustment method according to claim 6, characterized in that, The axial positioning component (50) includes a pressure positioning sensor, which includes a pressure probe (51); The process of moving the scale arc (20) and the axial positioning member (50) relative to the fixture (200) along the positioning center line of the fixture (200) to make the axial positioning member (50) abut against the end face of the wafer (300) includes: The scale arc (20) and the pressure positioning sensor move relative to the positioning center line of the fixture (200) so that the pressure probe (51) abuts against the end face of the chip (300).

8. The wafer pose adjustment method according to claim 6, characterized in that, Controlling the transmitter (30) to emit incident signals to the chip (300) includes: With the axial positioning member (50) abutting the end face of the wafer (300), the control transmitter (30) emits an incident signal toward the wafer (300).

9. The wafer pose adjustment method according to claim 1, characterized in that, Controlling the transmitter (30) to emit incident signals to the chip (300) includes: With the end face of the wafer (300) perpendicular to the positioning center line, the control transmitter (30) emits an incident signal toward the end face of the wafer (300); Adjusting the tilt of the wafer (300) end face and monitoring the intensity of the reflected signal acquired by the receiver (40) until the intensity of the reflected signal reaches its maximum includes: Starting from the positioning center line perpendicular to the end face of the chip (300), and ending at the receiving end (40) where the reflected signal of maximum intensity is obtained, determine the angle ∠2 through which the chip (300) has rotated; If ∠1, ∠2, ∠3, and ∠4 satisfy the test formula (1) ∠1=∠4+∠2, ∠3=∠4-∠2, then it is determined that the axial positioning component (50) has a material reduction failure. If ∠1, ∠2, ∠3, and ∠4 satisfy the test formula (2) ∠4=∠1+∠2, ∠3=∠4+∠2, then the axial positioning component (50) is determined to have additive failure.

10. The wafer pose adjustment method according to any one of claims 1 to 9, characterized in that, Also includes: Adjust the relative positions of the crystal orientation instrument (100) and the fixture (200) so that the center line of symmetry of the scale arc (20) coincides with the center line of positioning of the fixture (200).

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