A method of co-bonding silicon carbide with an electrode material and an interlayer

Abstract

The application belongs to the technical field of silicon carbide material connection, and particularly relates to a method for co-connecting silicon carbide by using electrode material and an intermediate layer. The method for co-connecting silicon carbide by using electrode material and an intermediate layer comprises the following steps: fixing electrode material or electrode material and intermediate layer material in the middle of two pieces of silicon carbide materials to be connected, making the silicon carbide materials closely contact with the electrode material and / or the intermediate layer material, connecting the two ends of the electrode material with electrode clamping plates to form a loop, and connecting by power supply. The electrode material or the electrode material and the intermediate layer material are used to connect the silicon carbide materials, a large amount of Joule heat is rapidly generated after the power supply is connected, the temperature of the surface and / or the intermediate layer material to be connected of the silicon carbide materials is instantaneously increased through the current and heat conduction effect, and the rapid connection of the silicon carbide materials is realized.

Description

Technical Field

[0001] This invention belongs to the field of silicon carbide material bonding technology, specifically relating to a method for co-bonding silicon carbide using electrode material and intermediate layer. Background Technology

[0002] Silicon carbide (SiC) possesses advantages such as high hardness, good wear resistance, high thermal conductivity, low coefficient of thermal expansion, resistance to oxidation and corrosion, and resistance to deformation. Furthermore, it maintains good mechanical properties and chemical stability even at high temperatures, leading to its wide application in aerospace, space optical remote sensing instruments, microelectronic devices, and the machinery industry. However, due to its poor machinability, conventional processes struggle to fabricate complex-shaped or large-sized SiC-based components. Utilizing efficient bonding technologies to fabricate large-sized, complex-shaped silicon carbide components is currently a more effective technical solution.

[0003] Currently, commonly used equipment for joining silicon carbide includes vacuum resistance furnaces, hot press furnaces, and spark plasma sintering furnaces. Hot press furnaces and spark plasma sintering furnaces can only process one sample at a time and require pressure, making them unsuitable for joining complex-shaped silicon carbide components. Furthermore, the joining equipment is overly complex, significantly increasing joining costs. Vacuum resistance furnaces can produce multiple samples simultaneously, but due to their extremely slow heating and cooling rates, the joining cycle is generally over 5 hours, reducing production efficiency. On the other hand, when using the above equipment to join silicon carbide, the entire joining component needs to be heated. The high temperatures may damage the silicon carbide substrate, reducing the strength of the joining component and affecting the further use of the material. Therefore, there is an urgent need to invent a silicon carbide joining technology that requires no additional pressure, has a short joining cycle, uses simple joining equipment, and concentrates heat at the joining interface. Summary of the Invention

[0004] The purpose of this invention is to address the above-mentioned technical problems by providing a method for co-connecting silicon carbide with electrode materials and an intermediate layer. Through rapid Joule heating technology, a large amount of Joule heat is generated at the moment the power is turned on, causing the intermediate layer to heat up rapidly, thereby achieving rapid connection of silicon carbide.

[0005] The present invention employs a method for co-connecting silicon carbide with electrode material and intermediate layer, which includes fixing the electrode material alone or both the electrode material and the intermediate layer material between two silicon carbide materials to be connected, with the silicon carbide material in close contact with the electrode material and / or the intermediate layer material, and the two ends of the electrode material connected to the electrode clamp to form a circuit, and connecting by applying electricity.

[0006] This invention uses an electrode material or a combination of an electrode material and an intermediate layer material to connect silicon carbide. After the power is turned on, the electrode material rapidly generates a large amount of Joule heat and heats up quickly. The heat is transferred through thermal conduction and / or current to rapidly raise the temperature of the silicon carbide material and / or the intermediate layer material, thereby achieving rapid connection of the silicon carbide material.

[0007] As a preferred method, before joining silicon carbide materials, their surfaces are ground and polished, and then washed with alcohol and deionized water to remove surface impurities and contaminants.

[0008] Furthermore, the electrode material is one or more of the following: metal sheet, conductive cast film, carbon material, and composite material.

[0009] Preferably, the metal sheet includes, but is not limited to, any one of Al, Ti, Fe, Go, Ni, Cu, Y, Zr, Mo, Ag, W, Pt, Au, and multi-element alloy materials composed of the above elements.

[0010] Furthermore, the conductive cast film is a MAX phase cast film; the MAX phase cast film is a ternary layered processable ceramic material, wherein M is a transition metal element, A is a main group element, and X is carbon or nitrogen, including but not limited to one or more of the following: titanium silicon carbide (Ti3SiC2), titanium aluminum carbide (Ti3AlC2), titanium aluminum carbide (Ti2AlC), vanadium aluminum carbide (V2AlC), chromium aluminum carbide (Cr2AlC), niobium germanium carbide (Nb4GeC3), zirconium trialuminum carbide (Zr3Al3C5), and zirconium tetraaluminum carbide (Zr2Al4C5).

[0011] Furthermore, the carbon material is one or more of the following: carbon cloth, carbon paper, carbon felt, carbon fiber bundles, and carbon fiber braids.

[0012] Furthermore, the composite material is one or more of MAX phase composite materials, metal matrix composite materials, and fiber composite materials.

[0013] Preferably, the MAX phase composite material includes, but is not limited to, MAX phase composite materials with carbon fiber, boron fiber, aramid fiber, and silicon carbide fiber as reinforcing phases, metal-reinforced MAX phase materials, and composite materials composed of MAX phase materials and composite phases; the composite phase includes, but is not limited to, one or more of SiC, ZrB2, TiC, and Al2O3.

[0014] Preferably, the metal matrix composite material includes, but is not limited to, metal matrix composite materials with carbon fiber, boron fiber, aramid fiber, and silicon carbide fiber as the reinforcing phase, as well as composite materials composed of metal and carbon, graphite, or ceramic powder. The ceramic powder material includes, but is not limited to, one or more of SiC, TiC, TiB2, MoB, WC, Cr3C2, VC, TiC, B4C, TiCN, SiC, and Al2O3.

[0015] Preferably, the fiber composite material includes, but is not limited to, one or more of carbon fiber, boron fiber, aramid fiber, and silicon carbide fiber composite materials.

[0016] Furthermore, the intermediate layer material is one or more of the following: metal foil, metal film, metal powder, ceramic film, and composite film.

[0017] Furthermore, the thickness of the intermediate layer material is 0.1–300 μm.

[0018] Furthermore, the metal foil is one or more of Al, Ti, Fe, Go, Ni, Cu, Zr, Mo, Ag, W, Pt, Au foil and rare earth metal foil; the rare earth metal foil is one or more of Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm.

[0019] Furthermore, the metal film is prepared on the surface of the silicon carbide material connection and / or the electrode material surface in contact with the silicon carbide material by any of the following methods: vacuum evaporation, arc ion plating, physical vapor deposition, chemical vapor deposition, spraying, or metal powder slurry coating.

[0020] Furthermore, the metal film is one or more of Al, Ti, Fe, Go, Ni, Cu, Zr, Mo, Ag, W, Pt, Au foil and rare earth metal film; the rare earth metal film is one or more of Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm.

[0021] Preferably, the metal powder slurry is obtained by dispersing metal powder in ethanol or acetone.

[0022] Furthermore, the ceramic film is obtained by casting ceramic powder into a film or by any of the following methods: physical vapor deposition, chemical vapor deposition, vacuum evaporation, arc ion plating, spraying, or ceramic powder slurry coating, on the surface of the junction of the silicon carbide material and / or the surface of the electrode material in contact with the silicon carbide.

[0023] Preferably, the ceramic powder casting process involves ball milling ceramic powder with a premixed liquid to obtain a slurry, casting the slurry onto a substrate, drying it at 40–100°C for 10–30 h, and then heating it to 500–1000°C at a heating rate of 1–5°C / min to remove the binder for 1–5 h. The premixed liquid comprises the following components in parts by weight: 3–10 parts polyethyleneimine, 5–20 parts polyvinyl alcohol, 2–10 parts polyethylene glycol, 30–50 parts acrylamide, 1–5 parts N,N'-methylenebisacrylamide, and 150–300 parts deionized water. The ball milling speed is 300–800 rpm / min, and the time is 3–10 h. During casting, the slurry outflow rate is controlled at 10–30 ml / min, and the distance between the cutting edge and the substrate is 30–100 μm.

[0024] Preferably, the ceramic powder slurry is obtained by dispersing ceramic powder in ethanol or acetone.

[0025] Preferably, the ceramic powder includes, but is not limited to, one or more of RE3Si2C2 powder, MAX phase, Mxene powder, metal oxide powder, and nano-carbon coated silicon powder.

[0026] In the RE3Si2C2 powder, RE is a rare earth metal, including but not limited to one or more of La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, and Tm.

[0027] The MAX phase powder includes, but is not limited to, one or more of Ti3SiC2, Ti3AlC2, Ti2AlC, V2AlC, Cr2AlC, Nb4GeC3, Zr3Al3C5, and Zr2Al4C5.

[0028] The Mxene powder includes, but is not limited to, one or more of Ti3C2, Ti2C, V2C, Cr2C, Nb4C3, Zr3C5, and ZrC5.

[0029] The metal oxide powder includes, but is not limited to, one or more of Al2O3, Y2O3, Er2O3, CaO, SrO, Sc2O3, and La2O3.

[0030] Furthermore, the composite membrane includes, but is not limited to, one or more of AlN-Y2O3, SiO2-Al2O3-Y2O3, CaO-Al2O3-SiO2, CaO-Al2O3-SiO2-Li2O, MgO-Al2O3-SiO2, Na2O-B2O3-SiO2, RE2O3-Al2O3-SiO2 (RE = one or more of Sc, Yb, Ho, Dy, Y, Nd), polycarbosilane composites, and polysiloxane composites.

[0031] Furthermore, the intermediate layer material can be placed in a single layer or multiple layers on one side of the electrode material or on both sides of the electrode material.

[0032] Furthermore, the silicon carbide material is one or both of silicon carbide ceramic materials and silicon carbide ceramic matrix composite materials.

[0033] Furthermore, the silicon carbide ceramic matrix composite material is one or more of the following: carbon fiber reinforced silicon carbide composite material, silicon carbide fiber reinforced silicon carbide composite material, and silicon carbide fiber reinforced ternary layered ceramic material.

[0034] Furthermore, the silicon carbide material has an irregular shape, including but not limited to any one of block or ring shapes.

[0035] Preferably, in the above-mentioned method of co-connecting silicon carbide with electrode material and intermediate layer, the silicon carbide material, electrode material and intermediate layer material are fixed by clamping or wrapping with tape or by pressing with a stainless steel mold from top to bottom, so that the silicon carbide material is in close contact with the electrode material and intermediate layer material.

[0036] Furthermore, the current flowing through the circuit can be any of the following: pulse current, direct current, or alternating current.

[0037] Furthermore, the current when energized is 1–100A, and the voltage is 1–100V.

[0038] Furthermore, in the above-mentioned method of co-connecting silicon carbide with electrode material and intermediate layer, the surface temperature of electrode material can rapidly rise to 500-2500℃ after energization.

[0039] Furthermore, in the above method of co-connecting silicon carbide with electrode material and intermediate layer, the connection time is 0.1 to 600 s.

[0040] The present invention also provides a silicon carbide connector, which is obtained by the above-described method of co-connecting silicon carbide with electrode material and intermediate layer.

[0041] Furthermore, the aforementioned silicon carbide connector consists of two silicon carbide materials and an electrode material or an electrode material and an intermediate layer material located between the two silicon carbide materials.

[0042] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0043] (1) Use electrode material or electrode material and intermediate layer material to connect silicon carbide material. After the power is turned on, the electrode material quickly generates a large amount of Joule heat. Through the action of current and heat conduction, the temperature of the silicon carbide material to be connected surface and / or intermediate layer material increases instantly, so as to realize the rapid connection of silicon carbide material.

[0044] (2) The method of joining silicon carbide in this invention directly concentrates energy at the joining interface, effectively avoiding damage to silicon carbide material caused by overall heating, and can efficiently join silicon carbide material, greatly reducing energy loss.

[0045] (3) The method of joining silicon carbide in this invention has an extremely fast heating and cooling rate and an extremely short joining cycle. It can be applied to joining silicon carbide of any complex shape, such as block, plate, or rod.

[0046] (4) The method of joining silicon carbide in this invention does not require any pressure, the intermediate layer has a very wide range of options, and the operation is simple;

[0047] (5) The method of the present invention is used to connect silicon carbide, and the interface bonding is good, which has extremely broad application prospects. Attached Figure Description

[0048] Figure 1 This is a schematic diagram of the method for co-connecting silicon carbide with electrode material and intermediate layer in Example 1;

[0049] In the diagram: 1-Silicon carbide ceramic material, 2-Silicon carbide ceramic material, 3-Electrode clamp, 4-Electrode clamp, 5-Al foil, 6-Carbon cloth;

[0050] Figure 2 This is a scanning electron microscope (SEM) image of the cross-section of the silicon carbide connector obtained in Example 1;

[0051] Figure 3 This is a schematic diagram of the method for co-connecting silicon carbide with electrode material and intermediate layer in Example 2;

[0052] In the diagram: 1-Silicon carbide ceramic material, 2-Silicon carbide ceramic material, 3-Electrode clamp, 4-Electrode clamp, 7-Zr sheet;

[0053] Figure 4 This is a scanning electron microscope image of the cross-section of the silicon carbide connector obtained in Example 2. Detailed Implementation

[0054] The technical solution of the present invention will be further described and illustrated below with reference to specific embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are only for the purpose of helping to understand the present invention and are not intended to limit the specific scope of the present invention. Furthermore, the accompanying drawings used herein are merely for better illustrating the content disclosed in the present invention and do not limit the scope of protection. Unless otherwise specified, the raw materials used in the embodiments of the present invention are all commonly used materials in the art, and the methods used in the embodiments are all conventional methods in the art.

[0055] Example 1

[0056] This embodiment employs a method of co-connecting silicon carbide with electrode material and intermediate layer, including the following steps:

[0057] (1) The two silicon carbide ceramic materials to be connected (Ningbo Jutuo Sealing Materials Co., Ltd., pressureless sintered 6H-SiC ceramic) are ground and polished, and washed with alcohol and deionized water to remove surface impurities and contaminants.

[0058] (2) The intermediate layer material is selected as 5μm thick Al foil, such as Figure 1 As shown, two Al foils 5 are placed on both sides of carbon cloth 6 (Shanghai Heshen Electric Co., Ltd., HCP430N), and then fixed with tape between the silicon carbide ceramic materials 1 and 2 to be connected. The silicon carbide ceramic materials 1 and 2 are in close contact with the Al foils 5. The two ends of the carbon cloth 6 are connected to the electrode clamps 3 and 4 to form a circuit. Under a current of 50A and a voltage of 50V, the surface temperature of the carbon cloth reaches 1200℃, and the connection lasts for 30 seconds. After the silicon carbide ceramic to be connected cools to room temperature, it is removed, and the entire connection process is completed.

[0059] The final cross-sectional scanning electron microscope image of the silicon carbide connector is shown below. Figure 2 As shown, the two silicon carbide ceramic materials are connected into one piece, and the connection interface is dense and crack-free.

[0060] Example 2

[0061] This embodiment employs a method of co-connecting silicon carbide with electrode material and intermediate layer, including the following steps:

[0062] (1) Grind and polish the two silicon carbide ceramic materials to be joined, and wash them with alcohol and deionized water to remove surface impurities and contaminants.

[0063] (2) The electrode material is selected from Zr sheets, such as Figure 3 As shown, Zr sheet 7 is fixed between silicon carbide ceramic material 1 and silicon carbide ceramic material 2 to be connected with tape. Silicon carbide ceramic material 1 and silicon carbide ceramic material 2 are in close contact with Zr sheet 7. Both ends of Zr sheet 7 are connected to electrode clamp 3 and electrode clamp 4 to form a circuit. When energized with a current of 30A and a voltage of 30V, the surface temperature of Zr sheet 7 reaches 1100℃ and the connection lasts for 70s. After the silicon carbide ceramic to be connected cools to room temperature, it is removed, and the entire connection process is completed.

[0064] The final cross-sectional scanning electron microscope image of the silicon carbide connector interface is shown below. Figure 4 As shown, the two silicon carbide ceramic materials are connected into one piece, and the connection interface is dense and crack-free.

[0065] Example 3

[0066] This embodiment employs a method of co-connecting silicon carbide with electrode material and intermediate layer, including the following steps:

[0067] (1) The two carbon fiber reinforced silicon carbide composite materials to be joined are ground and polished, and washed with alcohol and deionized water to remove surface impurities and contaminants.

[0068] (2) Weigh 800g of Ti3SiC2 powder and add it to the premixed solution (5g polyethyleneimine, 10g polyvinyl alcohol, 5g polyethylene glycol, 40g acrylamide and 2g... N,N'-methylenebisacrylamide was dissolved in 200 ml of deionized water and ball-milled at 500 rpm for 8 h to mix. The resulting slurry was cast onto a substrate, with the slurry flow rate controlled at 20 ml / min and the distance between the blade and the substrate at 50 μm. The slurry was dried at 50 °C for 20 h and then heated to 600 °C at a heating rate of 1 °C / min for 4 h to remove the adhesive, resulting in a 10 μm thick Ti3SiC2 cast film. Two layers of Ti3SiC2 cast films were placed on both sides of a carbon fiber bundle and then wrapped and fixed with tape in the middle of the carbon fiber reinforced silicon carbide composite material to be joined. The carbon fiber reinforced silicon carbide composite material was in close contact with the Al cast film. The two ends of the carbon fiber bundle were connected to the electrode clamp to form a circuit. Under a current of 50 A and a voltage of 60 V, the surface temperature of the carbon cloth reached 1200 °C and the connection was completed in 70 s. The silicon carbide ceramic to be joined was cooled to room temperature and removed, and the connection process was completed.

[0069] Example 4

[0070] This embodiment employs a method of co-connecting silicon carbide with electrode material and intermediate layer, including the following steps:

[0071] (1) Grind and polish the two silicon carbide ceramic materials to be joined, and wash them with alcohol and deionized water to remove surface impurities and contaminants.

[0072] (2) Take 0.03 parts of Yb3Si2C2 powder and disperse it in 0.05 ml of ethanol to obtain Yb3Si2C2 powder slurry. Coat the surface of a silicon carbide ceramic material to be connected with an 8 μm thick layer of Yb3Si2C2 powder slurry. Cover the surface of the Yb3Si2C2 powder slurry with carbon cloth. Then add another piece of silicon carbide ceramic material to be connected on the surface of the carbon cloth. Wrap and fix it with tape. The carbon cloth and silicon carbide ceramic material are in close contact. The two ends of the carbon cloth are connected to the electrode clamp to form a circuit. Under the current of 80A and voltage of 60V, the surface temperature of the carbon cloth reaches 1400℃ and the connection is completed in 50s. After the silicon carbide ceramic material to be connected cools to room temperature, it is taken out. The entire connection process is completed.

[0073] Example 5

[0074] This embodiment employs a method of co-connecting silicon carbide with electrode material and intermediate layer, including the following steps:

[0075] (1) The two silicon carbide fiber reinforced ternary layered ceramic materials to be connected are ground and polished, and washed with alcohol and deionized water to remove surface impurities and contaminants.

[0076] (2) Take 0.03 parts of Ti powder and disperse it in 0.05 ml of ethanol to obtain Ti powder slurry. Coat the surface of a silicon carbide fiber-reinforced ternary layered ceramic material to be connected with an 8 μm thick layer of Ti powder slurry. Cover the surface of Ti powder slurry with carbon fiber bundles. Then add another silicon carbide fiber-reinforced ternary layered ceramic material to be connected on the surface of the carbon fiber bundles. Wrap and fix it with tape. The carbon fiber bundles are in close contact with the silicon carbide fiber-reinforced ternary layered ceramic material. The two ends of the carbon fiber bundles are connected to the electrode clamp to form a circuit. Under a current of 50A and a voltage of 50V, the surface temperature of the carbon fiber bundles reaches 1200℃. The connection takes 70s. After the silicon carbide ceramic to be connected cools to room temperature, it is taken out. The entire connection process is completed.

[0077] Example 6

[0078] This embodiment employs a method of co-connecting silicon carbide with electrode material and intermediate layer, including the following steps:

[0079] (1) Grind and polish the two silicon carbide ceramic materials to be joined, and wash them with alcohol and deionized water to remove surface impurities and contaminants.

[0080] (2) Weigh 800g of Yb3Si2C2 powder and add it to a premixed solution (5g polyethyleneimine, 10g polyvinyl alcohol, 5g polyethylene glycol, 40g acrylamide and 2g N,N'-methylenebisacrylamide dissolved in 200ml deionized water). Ball mill at 500rpm / min for 8h to mix thoroughly. Cast the resulting slurry onto a substrate. During casting, control the slurry outflow rate at 20ml / min and the distance between the blade and the substrate at 50μm. Dry at 50℃ for 20h, and then heat to 600℃ at a heating rate of 1℃ / min for 4h to remove the binder and obtain a Yb3Si2C2 cast film with a thickness of 10μm. Cover the surface of a silicon carbide ceramic material to be bonded with carbon fiber bundles. A Yb3Si2C2 cast film is applied to the surface of the carbon fiber bundle. Then, another piece of silicon carbide ceramic material to be connected is added to the surface of the Yb3Si2C2 cast film and fixed with tape. The carbon fiber bundle and the Yb3Si2C2 cast film are in close contact with the silicon carbide ceramic material. The two ends of the carbon fiber bundle are connected to the electrode clamp to form a circuit. Under a current of 50A and a voltage of 60V, the surface temperature of the carbon cloth reaches 1200℃ and the connection takes 70 seconds. After the silicon carbide ceramic to be connected cools to room temperature, it is removed, and the entire connection process is completed.

[0081] Comparative Example 1

[0082] This comparative method for bonding silicon carbide includes the following steps:

[0083] (1) Grind and polish the two silicon carbide ceramic materials to be joined, and wash them with alcohol and deionized water to remove surface impurities and contaminants.

[0084] (2) The intermediate layer material is selected as 5μm thick Al foil. The two Al foils are placed on both sides of the carbon fiber bundle, and then they are wrapped and fixed in the middle of the silicon carbide ceramic material to be connected with tape. The silicon carbide ceramic material is in close contact with the Al foil. The silicon carbide ceramic material with Al foil and carbon fiber bundle is then placed in a high-temperature furnace and heated to 1200℃. After the silicon carbide ceramic to be connected is cooled to room temperature, it is taken out, and the entire connection process is completed.

[0085] Examples 1-6 use electrode materials or electrode materials and intermediate layer materials to connect silicon carbide materials. After the power is turned on, the electrode materials quickly generate a large amount of Joule heat. Through the action of current and heat conduction, the temperature of silicon carbide materials and / or intermediate layer materials rises instantaneously, realizing the rapid connection of silicon carbide materials. The resulting silicon carbide connectors are connected as one piece, and the connection interfaces are dense and crack-free. Comparative Example 1 uses Al foil as the intermediate layer material, combined with carbon fiber bundles, and connects at high temperature. This takes a long time, has low heat utilization, and the silicon carbide material is heated as a whole. High temperature may damage the silicon carbide matrix.

[0086] Finally, it should be noted that the specific embodiments described herein are merely illustrative of the spirit of the invention and are not intended to limit the implementation of the invention. Those skilled in the art can make various modifications or additions to the described embodiments or use similar methods to replace them; it is neither necessary nor possible to exemplify all embodiments here. However, obvious variations or modifications derived from the essential spirit of the invention still fall within the scope of protection of the invention, and interpreting them as any additional limitation would contradict the spirit of the invention.

Claims

1. A method for co-connecting silicon carbide with electrode material and intermediate layer, characterized in that, The process involves fixing both the electrode material and the intermediate layer material between two silicon carbide materials to be connected, with the silicon carbide material in contact with the electrode material and / or the intermediate layer material, and connecting both ends of the electrode material to the electrode clamp to form a circuit. The connection is then made by applying an electric current. After the electric current is applied, the surface temperature of the electrode material rises rapidly to 1100~2500℃, and the connection time is 30~70s. The electrode material is one or more of metal sheet, carbon material, and composite material; the carbon material is one or more of carbon cloth, carbon paper, carbon felt, and carbon fiber bundle; the composite material is one or more of MAX phase composite material and metal matrix composite material. The intermediate layer material is placed on one side of the electrode material or on both sides of the electrode material in a single layer or multiple layers; the intermediate layer material is one or more of metal foil, metal film, and ceramic film; the metal film is prepared on the surface of the silicon carbide material connection and / or the surface of the electrode material in contact with the silicon carbide material by any of the following methods: vacuum evaporation, arc ion plating, physical vapor deposition, chemical vapor deposition, spraying, or metal powder slurry coating.

2. The method for co-connecting silicon carbide with electrode material and intermediate layer according to claim 1, characterized in that, The thickness of the intermediate layer material is 0.1~300μm.

3. A silicon carbide connector, characterized in that, The silicon carbide connector is obtained by the method described in claim 1, which uses electrode material and intermediate layer to co-connect silicon carbide.

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