Jetting device, vapor deposition apparatus, and vapor deposition method

Abstract

Embodiments of the present disclosure provide a jetting device for jetting a gas in a reaction chamber of a vapor deposition apparatus, the jetting device comprising: a reaction gas conduit for jetting a reaction gas within the reaction chamber, the reaction gas conduit being defined by a first circumferential wall; a purge gas conduit for jetting a purge gas within the reaction chamber, the purge gas conduit being defined by the first circumferential wall at least at a jetting end of the reaction gas conduit and a second circumferential wall that is sleeved outside the first circumferential wall, and the reaction gas conduit and the purge gas conduit have the same jetting direction, which can clean the deposits that may accumulate at the jetting end of the reaction gas conduit with the purge gas, thereby optimizing the deposition efficiency, reducing the maintenance requirement and prolonging the service life of the jetting device.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to spraying apparatus, vapor deposition equipment, and vapor deposition method. Background Technology

[0002] Vapor deposition (VDC) technology, as a material surface treatment technique, has been applied in electronic technology fields such as integrated circuits and chip manufacturing. VDC involves forming a solid thin film on the surface of a solid substrate through physical or chemical processes occurring in the gas phase, and therefore can be divided into two main categories: physical vapor deposition (PVD) and chemical vapor deposition (CVD). A key step in VDC technology is the introduction of gas into a reaction chamber.

[0003] The gas introduced into the reaction chamber can be a single element, a compound, or a mixture of gases. These gases undergo physical or chemical changes within the chamber, thereby forming a deposited layer on the substrate. The choice of gas can be determined based on the desired deposited layer material and properties.

[0004] Typically, gas can be delivered into the reaction chamber through devices such as nozzles, gas distributors, or gas injection systems. The design and arrangement of these devices within the reaction chamber ensure that the gas uniformly covers the substrate.

[0005] However, one problem currently faced by those skilled in the art is that the aforementioned device can become clogged with deposits during the vapor deposition process, which not only affects production efficiency but also increases equipment maintenance costs. Summary of the Invention

[0006] In view of this, embodiments of the present disclosure aim to provide an injection apparatus, a vapor deposition apparatus, and a vapor deposition method. The injection apparatus has a dual-line configuration for injecting a reactant gas and a purge gas, respectively, to utilize the purge gas to remove deposits that may accumulate at the injection end of the reactant gas line, thereby optimizing deposition efficiency, reducing maintenance requirements, and extending the service life of the injection apparatus.

[0007] The technical solution of this disclosure embodiment is implemented as follows:

[0008] In a first aspect, embodiments of this disclosure provide an injection device for injecting gas into the reaction chamber of a vapor deposition apparatus, the injection device comprising:

[0009] A reaction gas conduit for injecting reaction gas into the reaction chamber, the reaction gas conduit being defined by a first circumferential wall;

[0010] A purge gas conduit for injecting purge gas into the reaction chamber, the purge gas conduit being defined at least at the injection end of the reaction gas conduit by a first circumferential wall and a second circumferential wall sleeved outside the first circumferential wall, and the reaction gas conduit and the purge gas conduit having the same injection direction.

[0011] In some alternative examples, the portion of the purge gas line located within the reaction chamber is defined by the first circumferential wall and the second circumferential wall.

[0012] In some alternative examples, the injection end of the purge gas line extends beyond the injection end of the reactant gas line in the injection direction.

[0013] In some alternative examples, at the injection end of the injection device, the first circumferential wall has a chamfer around the outer periphery to widen the purge gas line toward the reaction gas line.

[0014] In some alternative examples, the injection device includes an injection section and a transfer section, wherein a first circumferential wall and a second circumferential wall are disposed in the injection section, and the injection section is in communication with a reaction gas source and a purge gas source via the transfer section.

[0015] In some optional examples, the jet is detachably connected to the adapter.

[0016] In some alternative examples, the injection device is configured to inject the purge gas through the purge gas line while simultaneously injecting the reactant gas through the reactant gas line.

[0017] In some alternative examples, the injection device is configured such that the flow rate of the purge gas is less than the flow rate of the reactant gas.

[0018] In some optional examples, the purging gas is an inert gas.

[0019] In some alternative examples, the purge gas is a gas capable of etching the deposits formed by the reactive gas.

[0020] Secondly, embodiments of this disclosure provide a vapor deposition apparatus, the vapor deposition apparatus comprising:

[0021] Reaction chamber;

[0022] Multiple injection devices according to the first aspect are disposed in the reaction chamber.

[0023] In some alternative examples, multiple injection devices are arranged in a vertical row to inject gas from the side toward multiple substrates arranged vertically in the reaction chamber.

[0024] In some alternative examples, the vapor deposition apparatus includes multiple rows of the jetting devices arranged around the plurality of substrates.

[0025] Thirdly, embodiments of this disclosure provide a vapor deposition method applied to a vapor deposition apparatus including a jetting device according to the second aspect, the vapor deposition method comprising:

[0026] The reaction gas is injected into the reaction chamber through the reaction gas pipeline of the injection device;

[0027] While the reaction gas is being injected through the reaction gas pipeline of the injection device, purge gas is being injected into the reaction chamber through the purge gas pipeline of the injection device.

[0028] In some optional examples, the vapor deposition method further includes: after stopping the injection of the reactive gas, injecting a purge gas through the purge gas conduit of the injection device into the reaction chamber, wherein the purge gas is a gas capable of etching the deposit formed by the reactive gas.

[0029] This disclosure provides an injection apparatus, a vapor deposition apparatus, and a vapor deposition method. The injection apparatus includes a reactant gas line and a purge gas line formed by two nested circumferential walls. The reactant gas line injects reactant gas into the reaction chamber, while the purge gas line removes deposits that may accumulate at the injection end of the reactant gas line by injecting purge gas. The purge gas line helps maintain the cleanliness of the entire injection apparatus, reduces the risk of blockage by deposits, and facilitates more efficient injection of reactant gas onto the substrate, improving the uniformity and quality of the final deposited layer. For the vapor deposition apparatus, this injection apparatus ensures continuous and stable operation and reduces maintenance costs. Attached Figure Description

[0030] Figure 1 A schematic diagram of a vapor deposition apparatus provided in an embodiment of this disclosure;

[0031] Figure 2 for Figure 1 A schematic diagram of the nozzle of a vapor deposition device;

[0032] Figure 3 A schematic diagram of the spraying device provided in the embodiments of this disclosure;

[0033] Figure 4 A schematic diagram of a spraying device provided for another embodiment of this disclosure;

[0034] Figure 5 A schematic diagram of a spraying device provided for yet another embodiment of this disclosure;

[0035] Figure 6 A schematic diagram of a spraying device provided for yet another embodiment of this disclosure;

[0036] Figure 7 for Figure 6 Another schematic diagram of the injection device;

[0037] Figure 8 A schematic diagram of a vapor deposition apparatus provided for another embodiment of this disclosure;

[0038] Figure 9 A flowchart of a vapor deposition method provided in an embodiment of this disclosure. Detailed Implementation

[0039] The technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings.

[0040] exist Figure 1 The following is illustrated: a vapor deposition apparatus 1 according to some embodiments of the present disclosure.

[0041] The vapor deposition apparatus 1 includes a reaction chamber RC defined by a housing HO. A support SU for placing substrates is disposed within the reaction chamber RC. Multiple substrates DS are supported by the support SU at approximately the center of the reaction chamber RC and can be arranged in a vertical row. The substrates DS can be uniformly spaced apart from each other to expose their surfaces to be deposited to the environment within the reaction chamber RC.

[0042] The vapor deposition apparatus 1 also includes multiple nozzles SN for supplying gas to the interior of the reaction chamber RC. The multiple nozzles are disposed on the sidewalls of the reaction chamber RC. Each nozzle SN has an outlet OT that opens towards the substrate DC. The outlet OT communicates with the interior of the reaction chamber RC to inject gas from the side towards multiple substrates DS supported by a support SU in the center of the reaction chamber RC. Figure 1 In the embodiment shown, in order to improve the utilization of the reaction chamber RC, each substrate DS is placed in a horizontal direction, and the spacing between the substrates DS is set so as not to affect the formation of the deposited layer.

[0043] exist Figure 1In the embodiment shown, each nozzle SN is used to inject gas onto three substrates DS to form a deposited layer DL on the three substrates DS. The substrates DS are arranged in a vertical column, and correspondingly, the nozzles SN are also arranged in a vertical column. To ensure that a uniform deposited layer can be formed on each substrate DS, the vapor deposition apparatus 1 may include multiple rows of nozzles. Figure 1 As shown, the vapor deposition apparatus 1 may include two rows of nozzles arranged opposite each other on the sidewall of the reaction chamber RC.

[0044] The inventors discovered that when performing a deposition operation on a substrate DS using a vapor deposition apparatus 1, the reactive gas is not only deposited on the surface of the substrate DS, but may also be deposited on other surfaces within the reaction chamber RC.

[0045] like Figure 2 As shown, for a single nozzle SN, after the reactive gas is ejected from the outlet OT at a certain pressure, it disperses inside the reaction chamber and eventually settles on the surface of the component or substrate within the reaction chamber. A portion of the reactive gas settles on the outlet OT of the nozzle SN or on the outer surface of the nozzle SN located within the reaction chamber RC, thus forming deposits. As these deposits accumulate, an irregular deposition layer gradually forms, eventually obstructing the outlet OT. From the point where the deposition layer partially obstructs the outlet OT, the nozzle SN will be unable to eject gas according to the set conditions, thus affecting the effectiveness and efficiency of forming the deposition layer on the substrate DS. If not cleaned in time, the deposition layer will continue to accumulate and expand until it completely blocks the outlet OT, causing the nozzle SN to fail.

[0046] Overall, starting with the partial obstruction of the outlet OT, these unwanted deposits can adversely affect the efficiency, effectiveness, cost, and maintenance and lifespan of the entire deposition process.

[0047] In view of the above, embodiments of this disclosure aim to provide an injection device, a vapor deposition apparatus, and a vapor deposition method. The injection device has a dual-line configuration for injecting reactant gas and purge gas respectively, to utilize the purge gas to remove deposits that may accumulate around the outlet of the reactant gas line, thereby optimizing deposition efficiency, reducing maintenance requirements, and extending the service life of the injection device.

[0048] See Figure 3This disclosure provides an injection device PD for injecting gas into the reaction chamber of a vapor deposition apparatus. The injection device PD includes a reaction gas line RL for injecting reaction gas into the reaction chamber RC and a purge gas line CL for injecting purge gas into the reaction chamber RC. The reaction gas line RL is defined by a first circumferential wall W1. The purge gas line CL is defined at least at the injection end R1 of the reaction gas line RL by the first circumferential wall W1 and a second circumferential wall W2 sleeved outside the first circumferential wall W1, and the reaction gas line RL and the purge gas line CL have the same injection direction.

[0049] In the various embodiments of this disclosure, the reactive gas refers to the gas that participates in the formation of a deposited layer on the substrate surface during vapor deposition processes, such as chemical vapor deposition or physical vapor deposition. The reactive gas can be a single element, a compound, or a mixture, and can generate a solid deposited layer on the substrate surface under specific conditions, such as temperature, pressure, and the action of a catalyst. The reactive gas can be selected differently depending on the material of the substrate. As an example, when the substrate DS is a graphite substrate and the deposited layer is a silicon carbide layer, the reactive gas may include methyltrichlorosilane (MTS), hydrogen, and nitrogen. Silicon atoms in MTS can be used to form the deposited layer. Hydrogen can act as a reducing agent to decompose MTS, promoting the release of silicon atoms, and can also act as a carrier gas to transport MTS to the substrate surface and remove byproducts generated during film deposition, such as hydrogen chloride. Nitrogen can be used as a dilution gas to control the gas concentration and pressure within the reaction chamber, and can also act as a carrier gas to disperse and transport silicon atoms to the substrate surface.

[0050] In various embodiments of this disclosure, purge gas can maintain the cleanliness of the vapor deposition apparatus, particularly the jetting device and the reaction chamber, by preventing the accumulation of deposits on the equipment. For example, purge gas can physically remove unreacted substances within the jetting device by flowing at high speed, or it can reduce the concentration of reactive gases in the reaction chamber by diluting the gas, thereby reducing further chemical reactions and avoiding unwanted deposits.

[0051] exist Figure 3In this configuration, the injection device PD can be configured to be at least partially located within the reaction chamber RC, allowing the injection device PD to inject gas within the reaction chamber RC. The injection device PD can be arranged generally horizontally and can include a first circumferential wall W1 and a second circumferential wall W2. The first circumferential wall W1 can define a reaction gas line RL, wherein the injection end R1 of the reaction gas line RL is located within the reaction chamber RC. At the injection end R1 of the reaction gas line RL, the second circumferential wall W2 can be disposed around the circumferential surface of the first circumferential wall W1, thus forming a generally sleeve-like structure with the first circumferential wall W1, and defining a purge gas line CL by means of this sleeve-like structure, wherein the injection end C1 of the purge gas line CL is located within the reaction chamber RC.

[0052] It should be noted that the spray end mentioned in the embodiments of this disclosure includes an end face where a spray port is provided and a circumferential portion surrounding and close to the end face.

[0053] The injection directions of the reactant gas line RL and the purge gas line CL are essentially the same, ensuring that the reactant gas flow is not affected during the cleaning process, and preventing secondary deposition caused by blowing the cleaned deposits to other parts of the injection device. The injection direction mentioned in the embodiments of this disclosure refers to the centerline direction of the injected gas flow. Figure 3 In the embodiment shown, the injection directions of the reaction gas line RL and the purge gas line CL are approximately horizontal, such as... Figure 3 As indicated by the arrow in the image. In other words, the spray direction of the spray device PD is approximately horizontal.

[0054] When using the injection device, the reactive gas line RL and the purge gas line CL can inject different gases independently within the reaction chamber RC. The reactive gas injected by the reactive gas line RL participates in the deposition reaction to form a deposited layer on the substrate located in the reaction chamber. The purge gas injected by the purge gas line CL is used to purge the injection device.

[0055] As the purge gas flows through the purge gas line CL, its high-speed flow physically carries away the reactant gases and their deposits dispersed within CL. Based on the above description, after leaving the reactant gas line RL, the reactant gases may disperse around the injection end of RL, forming deposits on the injection end, such as on the outer surface of the first circumferential wall W1. However, since the purge gas also flows over the outer surface of the first circumferential wall W1, it prevents the deposition of reactant gases and at least partially removes the deposits, reducing the risk of deposits accumulating from the outer surface of the first circumferential wall W1 towards its axial end face and inner surface.

[0056] Furthermore, after the purge gas is ejected from the injection end of the purge gas line CL, it continues to flow in its original direction for a certain distance due to inertia. This forms a "gas curtain" around the reactive gas ejected from the injection end of the reactive gas line RL, restricting the circumferential escape of the reactive gas and allowing it to continue flowing in its original direction. As the purge gas gradually decelerates within the reaction chamber, it also changes its flow direction and gradually disperses within the reaction chamber. A portion of the purge gas flows over the axial end face and surrounding area of ​​the first circumferential wall W1 and the axial end face and surrounding area of ​​the second circumferential wall W2. This also prevents the deposition of reactive gas in these areas, thereby maintaining the cleanliness of the reactive gas line RL and the purge gas line CL at their respective injection ends.

[0057] This disclosure provides an injection device PD. The injection device PD includes a reactant gas line RL and a purge gas line CL formed by two nested circumferential walls. The reactant gas line RL injects reactant gas into a reaction chamber RC, while the purge gas line CL injects purge gas to remove deposits that may accumulate at the injection end of the reactant gas line. By including the purge gas line, the cleanliness of the entire injection device can be maintained, reducing the risk of blockage by deposits, and also helps to more effectively inject the reactant gas onto the substrate, improving the uniformity and quality of the final deposited layer.

[0058] Because the reactive gases disperse within the reaction chamber after entering, the portion of the injection device located within the chamber may come into contact with these gases, potentially forming undesirable deposits on its surface. For example... Figure 3 As shown, the injection device PD is disposed through the sidewall of the reaction chamber in a sealed manner, such that a portion of the injection device PD is located within the reaction chamber. This portion of the injection device PD located within the reaction chamber may form deposits on its surface due to contact with the reactant gas.

[0059] Therefore, in some embodiments of this disclosure, the portion of the purge gas line CL located within the reaction chamber RC is defined by a first circumferential wall W1 and a second circumferential wall W2.

[0060] like Figure 3As shown, at least a portion of the purge gas line CL is formed between the first circumferential wall W1 and the second circumferential wall W2 within the reaction chamber RC, and is directly defined by the first circumferential wall W1 and the second circumferential wall W2. This allows the purge gas to directly contact the outer surface of the first circumferential wall W1 and the inner surface of the second circumferential wall W2, and flow along these two surfaces toward the injection end. Therefore, the purge gas can purge the portions of the outer surface of the first circumferential wall W1 and the inner surface of the second circumferential wall W2 exposed within the reaction chamber RC.

[0061] To improve cleaning effectiveness and ensure that the injection end of the reactive gas pipeline and its surrounding area remain clean and unobstructed, in some embodiments of this disclosure, such as... Figure 4 As shown, the injection end C1 of the cleaning gas line CL extends beyond the injection end R1 of the reaction gas line RL in the injection direction.

[0062] exist Figure 4 In the embodiment shown, within the reaction chamber, the second circumferential wall W2 extends further in the injection direction than the first circumferential wall W1. This also results in the purge gas line CL being longer than the reaction gas line RL within the reaction chamber and in the injection direction. Figure 4 In the reaction chamber, the two pipes differ in length by a distance D. After the purge gas flows past the injection end R1 of the reactant gas pipe RL, it can continue to flow in the injection direction under the guidance of the purge gas pipe CL, that is, continue to flow along the inner surface of the second circumferential wall W2, without diffusing in other directions. This extends the length of the "air curtain" formed by the purge gas in the injection direction. As discussed above, the "air curtain" formed by the purge gas allows the reactant gas to continue flowing in the injection direction after leaving the reactant gas pipe RL without diffusing in the circumferential direction. This further reduces the risk of deposits forming on the surfaces of the first circumferential wall W1 and its vicinity due to the diffusion of the reactant gas into these areas.

[0063] In some embodiments of this disclosure, see Figure 5 At the injection end R1 of the injection device PD, the first circumferential wall W1 has a chamfered portion CH around the outer periphery so that the purging gas line CL expands toward the reaction gas line RL.

[0064] The chamfered section CH causes the axial end face of the first circumferential wall W1 to be inclined to the inner surface of the second circumferential wall W2. The purge gas can more easily contact this inclined axial end face during flow, thus directly cleaning the axial end face while flowing in the injection direction. Since the purge gas often has a higher flow velocity in the purge gas line CL along the injection direction, it can carry more reactant gas and deposits away from the injection device PD, achieving a better cleaning effect on the injection device.

[0065] Since the first circumferential wall W1 and the second circumferential wall W2 are nested together and form independent reaction gas pipelines RL and purge gas pipelines CL, the injection device PD needs to be connected to two gas sources to provide the corresponding gas to the two gas pipelines respectively.

[0066] Based on this, regarding the implementation of the spraying device, see some embodiments of this disclosure. Figure 6 and Figure 7 The injection device PD includes an injection section P1 and a transfer section P2. A first circumferential wall W1 and a second circumferential wall W2 are disposed in the injection section P1. The injection section P1 is connected to the reaction gas source and the purge gas source via the transfer section P2. Figure 6 and Figure 7 These are cross-sectional views obtained by taking pictures of the jetting device PD on different planes.

[0067] The injection section P1 can be partially disposed within the reaction chamber RC. The transition section P2 can be disposed outside the reaction chamber RC and... Figure 6 The diagram shows an overall rectangular parallelepiped shape. The adapter P2 internally forms a first adapter passage ZL1 and a second adapter passage ZL2. One end of the first adapter passage ZL1 is connected to the reaction gas line RL, and the other end is connected to the reaction gas source GS1. One end of the second adapter passage ZL2 is connected to the purge gas line CL, and the other end is connected to the reaction gas source GS2. To prevent interference between the two adapter passages and to facilitate connection to the corresponding gas sources, in... Figure 6 In the embodiment shown, the first transition passage ZL1 and the second transition passage ZL2 are perpendicular to each other. Therefore, the ends of the first transition passage ZL1 and the second transition passage ZL2 that communicate with the corresponding gas sources are located on two mutually perpendicular surfaces. In this way, although the first circumferential wall W1 and the second circumferential wall W2 are provided in a nested manner, the air inlet ends of the first circumferential wall W1 and the second circumferential wall W2 can be located in different planes through the transition part P2, which facilitates the connection with the corresponding gas sources.

[0068] It should be noted that the adapter P2 can be configured to have other shapes, and the relative positional relationship and orientation of the first adapter path ZL1 and the second adapter path ZL2 relative to each other can also be configured in other ways, not limited to those described above.

[0069] To reduce the manufacturing difficulty of the spraying device and facilitate its maintenance and cleaning, in some embodiments of this disclosure, the spraying part P1 can be detachably connected to the adapter P2. For example... Figure 6 As shown, the spray unit P1 has a flange FL with multiple first threaded holes TH1 at its end connecting to the adapter P2. The adapter P2 also has multiple second threaded holes TH2 at its end connecting to the spray unit P1. The number and size of the first threaded holes TH1 and the second threaded holes TH2 can be the same, and they are configured such that the first threaded holes TH1 and the second threaded holes TH2 can be aligned when the spray unit P1 is connected to the adapter P2. Then, the spray unit P1 and the adapter P2 can be connected simply by passing screws through the threads of the first threaded holes TH1 and the second threaded holes TH2. When it is necessary to thoroughly clean the spray device PD or to repair or replace only one of the spray unit P1 or the adapter P2, the screws can be loosened to separate the spray unit P1 from the adapter P2. This is not only simple and cost-effective, but also prevents any damage to the spray device PD.

[0070] Because the reactant gas line RL and the purge gas line CL are set independently of each other, the injection device PD can be configured to inject reactant gas through the reactant gas line RL and purge gas through the purge gas line CL simultaneously, thus performing the purge operation while injecting the reactant gas. This not only limits the unwanted dispersion of the reactant gas in real time through the gas curtain formed by the purge gas, but also promptly removes deposits from the injection device PD.

[0071] When reactant and purge gases are simultaneously injected through a single injection device (PD), the PD is configured such that the velocity of the purge gas is lower than that of the reactant gas. When the reactant and purge gases meet, if the velocity of the reactant gas is higher than that of the purge gas, according to Bernoulli's principle, the dynamic pressure of the reactant gas will be lower than that of the purge gas. This pressure difference helps to push the purge gas towards the region where the reactant gas flows, causing the reactant gas to converge towards its center. Furthermore, the relatively low velocity of the purge gas ensures that it does not excessively interfere with the main flow path of the reactant gas due to excessive kinetic energy, or lead to excessive gas mixing.

[0072] As discussed above, appropriate single elements, compounds, or mixtures can be selected as purge gases depending on the specific application scenario. In some embodiments of this disclosure, the purge gas can be an inert gas. For example, the purge gas can be nitrogen, argon, helium, etc. Inert gases, due to their stability, do not participate in the deposition reaction between the reactive gas and the substrate surface, avoiding the introduction of new chemical reactions and thus maintaining the purity of the deposition environment. Moreover, as discussed above, inert gases can also be used as dilution gases to control the gas concentration and pressure within the reaction chamber.

[0073] Besides simultaneously injecting reactant and purge gases during the deposition reaction, purge gases can also be injected separately after the deposition reaction is complete, i.e., a separate purge operation can be performed to further clean the deposits in the injection device. In this case, the purge gas can be selected without considering whether the reactant and purge gases will react. In chemical vapor deposition, according to some embodiments of this disclosure, a gas capable of etching the deposits formed by the reactant gases can be selected as the purge gas. After the deposition operation is completed, the etching gas is introduced into the injection device, thereby removing the deposits deposited in the injection device and even the reaction chamber through etching. In this case, the purge operation is not only a physical purging but also includes the decomposition of the deposits through a chemical reaction, which will make the cleaning more thorough.

[0074] Some embodiments of this disclosure also provide a vapor deposition apparatus 10. See also Figure 8 The vapor deposition apparatus 10 may include: a reaction chamber RC; and a plurality of jetting devices PD disposed within the reaction chamber RC as described above.

[0075] In some embodiments of this disclosure, see Figure 8 Multiple injection devices PD can be arranged in a vertical row to inject gas from the side toward multiple substrates DS arranged vertically in the reaction chamber RC.

[0076] In some embodiments of this disclosure, see Figure 8 The vapor deposition apparatus 10 may include multiple rows of jetting devices PD arranged around multiple substrates DS.

[0077] Some embodiments of this disclosure also provide a vapor deposition method. This vapor deposition method can be applied to a vapor deposition apparatus including the jetting device PD described above.

[0078] like Figure 9 As shown, the vapor deposition method includes:

[0079] S01: Reaction gas is injected into the reaction chamber through the reaction gas pipeline of the injection device;

[0080] S02: While the reaction gas is being injected through the reaction gas pipeline of the injection device, a cleaning gas is being injected into the reaction chamber through the cleaning gas pipeline of the injection device.

[0081] In some embodiments of this disclosure, the vapor deposition method further includes: after stopping the injection of the reactive gas, injecting a purge gas into the reaction chamber through the purge gas conduit of the injection device, wherein the purge gas is a gas capable of etching the deposit formed by the reactive gas.

[0082] By using a vapor deposition apparatus 10 including a jetting device PD, continuous and stable operation of the vapor deposition apparatus can be ensured, and the maintenance cost of the vapor deposition apparatus can be reduced.

[0083] It should be noted that the technical solutions described in the embodiments of this disclosure can be combined arbitrarily without conflict.

[0084] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A jetting device for jetting gas into the reaction chamber of a vapor deposition apparatus, characterized in that, The spraying device includes: A reaction gas conduit for injecting reaction gas into the reaction chamber, the reaction gas conduit being defined by a first circumferential wall; A purge gas conduit for injecting purge gas into the reaction chamber, the purge gas conduit being defined at least at the injection end of the reaction gas conduit by a first circumferential wall and a second circumferential wall, the second circumferential wall being sleeved outside the first circumferential wall and arranged around the circumferential surface of the first circumferential wall, and the reaction gas conduit and the purge gas conduit having the same injection direction.

2. The spraying device according to claim 1, characterized in that, The portion of the purge gas pipeline located within the reaction chamber is defined by the first circumferential wall and the second circumferential wall.

3. The spraying device according to claim 1, characterized in that, The injection end of the cleaning gas pipeline extends beyond the injection end of the reaction gas pipeline in the injection direction.

4. The spraying device according to any one of claims 1 to 3, characterized in that, At the injection end of the injection device, the first circumferential wall has a chamfered portion around the outer periphery to widen the purging gas line toward the reaction gas line.

5. The spraying device according to claim 1, characterized in that, The injection device includes an injection section and a transfer section. The first circumferential wall and the second circumferential wall are disposed in the injection section. The injection section is connected to the reaction gas source and the purge gas source via the transfer section.

6. The spraying device according to claim 5, characterized in that, The spray section is detachably connected to the adapter section.

7. The spraying device according to any one of claims 1 to 3, characterized in that, The injection device is configured to inject the reaction gas through the reaction gas pipeline and the purge gas through the purge gas pipeline simultaneously.

8. The spraying device according to claim 7, characterized in that, The injection device is configured such that the flow rate of the purging gas is less than the flow rate of the reacting gas.

9. The spraying device according to any one of claims 1 to 3, characterized in that, The cleaning gas is an inert gas.

10. The spraying device according to any one of claims 1 to 3, characterized in that, The purging gas is a gas capable of etching the deposits formed by the reactive gas.

11. A vapor deposition apparatus, characterized in that, The vapor deposition equipment includes: Reaction chamber; A plurality of injection devices according to any one of claims 1 to 10 are disposed in the reaction chamber.

12. The vapor deposition apparatus according to claim 11, characterized in that, The plurality of the injection devices are arranged in a vertical row for injecting gas from the side toward the plurality of substrates arranged vertically in the reaction chamber.

13. The vapor deposition apparatus according to claim 12, characterized in that, The vapor deposition apparatus includes multiple rows of the jetting devices arranged around the plurality of substrates.

14. A vapor deposition method, characterized in that, The vapor deposition method is applied to a vapor deposition apparatus including a jetting device according to any one of claims 1 to 10, the vapor deposition method comprising: The reaction gas is injected into the reaction chamber through the reaction gas pipeline of the injection device; While the reaction gas is being injected through the reaction gas pipeline of the injection device, purge gas is being injected into the reaction chamber through the purge gas pipeline of the injection device.

15. The vapor deposition method according to claim 14, characterized in that, The vapor deposition method further includes: after stopping the injection of the reaction gas, injecting a purge gas into the reaction chamber through the purge gas pipeline of the injection device, wherein the purge gas is a gas capable of etching the deposit formed by the reaction gas.

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